CN102477543A - Rotation type spatial separation chemical vapor deposition method and equipment utilizing same - Google Patents
Rotation type spatial separation chemical vapor deposition method and equipment utilizing same Download PDFInfo
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- CN102477543A CN102477543A CN2010105625824A CN201010562582A CN102477543A CN 102477543 A CN102477543 A CN 102477543A CN 2010105625824 A CN2010105625824 A CN 2010105625824A CN 201010562582 A CN201010562582 A CN 201010562582A CN 102477543 A CN102477543 A CN 102477543A
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Abstract
The invention discloses a rotation type spatial separation chemical vapor deposition (CVD) method. The rotation type spatial separation chemical vapor deposition method includes steps that a base rotates in a reaction cavity and sequentially passes multiple reaction areas in the reaction cavity, and precursors are obtained in the reaction areas by the aid of a supplying system, and are attached to the surface of the base when the base passes through the reaction areas with the precursors; and different precursors attached on the surface of the base are reacted chemically to generate a film deposited on the surface of the base. The invention further discloses rotation type spatial separation CVD equipment utilizing the rotation type spatial separation chemical vapor deposition method. By the aid of the rotation type spatial separation chemical vapor deposition method and the equipment utilizing the same, the deposition thickness of the film can be controlled conveniently, and uniformity of the film can be improved. The rotation type spatial separation chemical vapor deposition method and the equipment utilizing the same are applicable to preparing films in various thicknesses.
Description
Technical field
Relevant a kind of chemical vapor deposition (CVD, the Chemical Vapor Deposition) method of the present invention refers in particular to a kind of rotary spatial separation CVD method and equipment thereof.
Background technology
CVD is meant the steam (presoma) of gaseous reactant that contains formation film element or liquid reactants and reacts other required gas introducing reaction chamber, in the process of substrate surface generation chemical reaction film former.A lot of films all are to adopt the preparation of CVD method in VLSI; Its ultimate principle is: chemical vapour deposition is through the mode of chemical reaction; Utilize the various energy such as heating, plasma excitation or optical radiation, the chemical substance that in reactor drum, makes gaseous state or steam condition forms the technology of solid deposited thing through chemical reaction on gas phase or gas-solid interface.Be exactly in simple terms: two or more gaseous state starting material import in the reaction chamber, and chemical reaction takes place each other for they then, form a kind of new material, deposit on the substrate surface.
Though aforesaid method has the fast advantage of sedimentation rate, has following shortcoming: the different presomas of the accurate control of needs feed the amount and the speed of reactor drum, thus and the deposit thickness of monitoring control in real time.Because phase mutual interference between the presoma air-flow that feeds makes that the homogeneity of deposit film is relatively poor, particularly very difficult for very thin (several nanometers are to tens nanometers) thin-film technique control of preparation, process repeatability is poor.
Summary of the invention
Main purpose of the present invention is to provide a kind of rotary spatial separation chemical vapor deposition CVD method and equipment thereof, can control thin film deposition thickness easily, improves uniformity of film, and, be applicable to the film for preparing all thickness.
For achieving the above object; The present invention provides a kind of rotary spatial separation chemical vapor deposition CVD method; Comprise: substrate is at the reaction cavity internal rotation; Through the intravital a plurality of reaction zones of said reaction chamber, said reaction zone obtains presoma through supply system successively, and said presoma is adsorbed on the surface of said substrate when the reaction zone of said substrate through said presoma place; Be adsorbed between the different said presoma of said substrate surface chemical reaction takes place, generate the film that is deposited on said substrate surface.
Further, this method also comprises: also through being arranged on the clear area between two adjacent said reaction zones that obtain different said presomas, said clear area obtains carrier gas through said supply system in said substrate.
Further, obtain said presoma through said supply system or said carrier gas comprises: said supply system is injected said presoma and/or said carrier gas to said reaction zone; After stopping to inject said presoma and/or said carrier gas, said supply system with said carrier gas and/or the said presoma of failing to be adsorbed on said substrate surface take away.
Further, this method also comprises: with said substrate heat, refrigeration, illumination or making alive handle.
Further, the treatment temp of said substrate is-20 ℃ to 1000 ℃.
Further, this method also comprises: with the processing of heating or freeze of said presoma.
Further, the treatment temp of said presoma is-20 ℃ to 500 ℃.
Further, said substrate is 1 rev/min to 100 rev/mins at the rotating speed of said reaction cavity internal rotation.
For achieving the above object, the present invention also provides a kind of rotary spatial separation chemical vapor deposition CVD equipment, and comprising: reaction cavity, set inside have a plurality of reaction zones; Swivel arrangement is arranged at said reaction cavity inside, is used to make substrate at said reaction cavity internal rotation; And supply system, be arranged at said reaction zone top, be used to make said reaction zone to obtain presoma.
Further, said reaction cavity inside also is provided with the clear area, and said clear area is arranged between two adjacent said reaction zones that obtain different presomas; Said supply system also is arranged at top, said clear area, is used to make said clear area to obtain carrier gas.
Further, said supply system comprises: outlet is arranged at said reaction zone or said clear area top; Bleeding point is set up in parallel with said outlet; Precursor source and carrier gas source are connected with said outlet respectively through valve and pipeline; And vacuum pump, be connected with said bleeding point through said pipeline.
Further, the exit of said carrier gas source is provided with mass flow controller.
Further, also be provided with device for absorbing tail gas between said vacuum pump and the said bleeding point.
Further, the distance of said outlet and said swivel arrangement is 2mm to 200mm.
Further, said supply system also comprises heating/refrigeration plant and temp probe.
Further, also be provided with heating/refrigeration plant and temp probe in the said reaction cavity.
Further, the rotating speed of said swivel arrangement is 1 rev/min to 100 rev/mins.
Further, said swivel arrangement comprises: swinging strut; PWR PLT are connected with said swinging strut, are used to drive said swinging strut rotation; And anchor clamps, be arranged on the said swinging strut, be used for fixing said substrate.
Compared with prior art, adopt the film of this rotary spatial separation chemical vapor deposition CVD method of the present invention and equipment thereof preparation finer and close, can combine preferably with substrate.Secondly, can control film thickness easily through substrate rotating speed and revolution.Once more, the presoma of arranging in pairs or groups is arbitrarily realized the film multi-layer structures growth in proper order, and film doping.At last, be applicable to the film of preparation all thickness, even can prepare the film of several nanometers even the following thickness of nanometer.
Description of drawings
Fig. 1 is a rotary spatial separation CVD method flow diagram of the present invention;
Fig. 2 is the action synoptic diagram of a kind of embodiment of rotary spatial separation CVD method of the present invention;
Fig. 3 is the structural representation of rotary spatial separation CVD equipment of the present invention;
Fig. 4 is the structural representation of supply system of the present invention.
Embodiment
Relevant technology contents of the present invention and detailed description, existing conjunction with figs. explanation as follows.
See also Fig. 1, a kind of rotary spatial separation chemical vapor deposition CVD method of the present invention may further comprise the steps:
Step S10: substrate is at the reaction cavity internal rotation, successively through the intravital a plurality of reaction zones of said reaction chamber;
Wherein, said substrate is 1 rev/min to 100 rev/mins at the rotating speed of said reaction cavity internal rotation: for the substrate of the complex construction with high form ratio, can adopt 1 rev/min of low-rotate speed, the highest complex construction of realizing form ratio＞1: 1000; For the substrate that need improve sedimentation rate again simple in structure, can adopt 100 rev/mins of maximum speeds, the sedimentation rate＞1nm/ second of this moment; For the common substrate that does not require high deposition rate, can adopt 10 rev/mins rotating speed so that control film thickness well, the film thickness control accuracy is superior to ± 1nm;
Wherein, can also said substrate be heated, processing such as refrigeration, illumination, making alive, with the control reaction conditions; Therefore the treatment temp of said substrate can be controlled at-20 ℃ to 1000 ℃: for the substrate of biological sample, need keep original pattern in vacuum environment, can adopt minimum temperature-20 ℃; For the deposition of common substrate, generally adopt 100 ℃ to 400 ℃; When needs carry out anneal to substrate, can adopt 1000 ℃ of top temperatures;
Step S20: said reaction zone obtains presoma through supply system;
Wherein, can also said presoma be heated, processing such as refrigeration; The treatment temp of said presoma is-20 ℃ to 500 ℃: and presoma that vp very high very low for boiling point, can adopt minimum temperature-20 ℃ to reduce the activity of presoma; For common precursor, can adopt room temperature to 200 ℃ according to practical situation; For the very high solid precursor of fusing point, can adopt 500 ℃ of top temperatures;
Step S30: said presoma is adsorbed on the surface of said substrate when the reaction zone of said substrate through said presoma place;
Step S40: be adsorbed between the different said presoma of said substrate surface chemical reaction takes place, generate the film that is deposited on said substrate surface;
The concentration of said presoma that wherein, can be through changing said reaction zone, the speed of said substrate rotation and then control said depositing of thin film speed.
Rotary spatial separation chemical vapor deposition CVD method of the present invention; Also comprise: said substrate is also through being arranged on the clear area between two adjacent said reaction zones that obtain different said presomas; Said clear area obtains carrier gas through said supply system, and said clear area can prevent that different said presomas are in said reaction zone generation cross reaction;
Obtain said presoma or said carrier gas comprises through said supply system: said supply system is injected said presoma and/or said carrier gas to said reaction zone; After stopping to inject said presoma and/or said carrier gas, said supply system with said carrier gas and/or the said presoma of failing to be adsorbed on said substrate surface take away, through purifying the back discharge;
Wherein, said presoma is gaseous state, liquid state, solid-state or plasmoid; Liquid, solid-state said presoma can be brought reaction zone into through carrier gas, and the said presoma of gaseous state, plasmoid can directly get into reaction zone also can bring said reaction zone into through carrier gas;
Wherein, said carrier gas is a rare gas element, and said carrier gas can be passed through mass flow controller (MFC) and regulate the flow size, and carrier gas flux can be for 0 to 3000sccm adjustable: generally, carrier gas flux can be 300sccm; When needs were opened cavity exposure atmosphere, carrier gas flux can be 3000sccm; The deposition beginning Pretesting vacuum limit can be set to 0sccm by carrier gas flux.
Particularly; Among a kind of embodiment of rotary spatial separation CVD method of the present invention; Adopt two kinds of presomas to prepare deposit film, be provided with 10 reaction zones and 10 in the reaction cavity and be arranged on two clear areas between the adjacent reaction district, part shows reaction zone A (being called for short A district), reaction zone B (being called for short the B district) and clear area 0 (abbreviation 0 district) of this embodiment among Fig. 2; As shown in Figure 2, may further comprise the steps:
The first step: the reaction zone A that substrate exists through precursor A; During through reaction zone A, precursor A can be retained in the surface of substrate through chemisorption or physical adsorption;
Second step: the clear area 0 that substrate exists through rare gas element; During through clear area 0, rare gas element is used to isolate the precursor A of reaction zone A, prevents that the presoma of itself and next reaction zone from reacting;
The 3rd step: the reaction zone B that substrate exists through precursor B; During through reaction zone B, the precursor A generation chemical reaction of precursor B and substrate surface forms thin film;
More than three steps can accomplish the deposition of thin film.Then, substrate is again successively through clear area 0 and reaction zone A.When through reaction zone A, thereby the precursor B generation chemical reaction that adsorbs in precursor A and the substrate forms another layer film; Afterwards, substrate is successively through clear area 0, reaction zone B, clear area 0.......All can form thin film through reaction zone A and reaction zone B.
If reaction zone A, clear area 0 and reaction zone B district in reaction cavity around arranging a week; Simply be designated as: A0B0A0B0A0B0A0B0A0B0; Substrate rotates a circle in reaction cavity and then can pass through 5 reaction zone A and 5 reaction zone B respectively, and then forms 10 layer films.
If the actual film that only need relatively approach then can provide presoma only for 1 reaction zone A and 1 reaction zone B, substrate is revolved to turn around in reaction cavity and then only can be formed 2 layer films.Further; Thinner if desired film; Can accelerate the speed that substrate is rotated in reaction cavity; Make substrate residence time in reaction zone A and reaction zone B very short, the presoma of absorption will seldom and because speed can also make the presoma of a lot of absorption got rid of very soon, thin film will be very thin so like this.
In addition; Among the another kind of embodiment of rotary spatial separation CVD method of the present invention; In order to prepare polynary deposit film, adopt precursor A, precursor B, presoma C and presoma D, corresponding with reaction zone A, reaction zone B, reaction zone C and reaction zone D respectively; The then minimum work period is A0B0C0D0 ....
In sum, the embodiment that the setting of presoma and reaction zone is not limited to put down in writing in the literary composition, but the material that when reality is used, prepares as required adjusts accordingly.
See also Fig. 3, a kind of rotary spatial separation chemical vapor deposition CVD equipment of the present invention comprises: support 1, reaction cavity 2, swivel arrangement 13, supply system, heating/refrigeration plant 14 and temp probe.Wherein:
Reaction cavity 2 is installed on the support 1.
Reaction cavity 2 set inside have a plurality of reaction zones, and said reaction zone top is provided with the said supply system that can make said reaction zone obtain presoma; Reaction cavity 2 inside also are provided with and the clear area, and said clear area is arranged between two adjacent said reaction zones that obtain different presomas, and top, said clear area is provided with the said supply system that can make said clear area obtain carrier gas; Also be provided with heating/refrigeration plant 14 and temp probe in the reaction cavity 2, heating/refrigeration plant 14 can make the temperature of substrate be controlled at-20 ℃ to 1000 ℃, and particular case is identical with method embodiment situation of the present invention, repeats no more at this.
See also Fig. 4, said supply system of the present invention comprises: outlet 3, bleeding point 4, precursor source 5, carrier gas source 6, mass flow controller 7, valve 8, pipeline 10, device for absorbing tail gas 11, vacuum pump 12 and heating/refrigeration plant 14.Wherein:
In addition, outlet 3 is 2mm to 200mm with the distance of swivel arrangement 13, for very thin substrate (like silicon chip), can farthest utilize presoma with apart from adjusting to 2mm; For the substrate that certain altitude is arranged, can be according to the t.a. of substrate, will be apart from adjusting to than substrate maximum height high 2 to 10mm; Maximum permission height of specimen is 200mm.
Said supply system also comprises heating/refrigeration plant 14 and temp probe, and heating/refrigeration plant 14 can make the temperature of presoma be controlled at-20 ℃ to 500 ℃, and particular case is identical with method embodiment situation of the present invention, repeats no more at this.
Particularly, among a kind of embodiment of rotary spatial separation CVD equipment of the present invention, said reaction zone is corresponding one by one with said supply system, and said clear area is also corresponding one by one with said supply system.Wherein, said presoma is gaseous state, liquid state, solid-state or plasmoid; Liquid, solid-state said presoma can be brought reaction zone into through carrier gas, and the said presoma of gaseous state, plasmoid can directly get into reaction zone also can bring said reaction zone into through carrier gas; During actual the use, can feed presoma and/or carrier gas that valve 8 controls get into outlet 3.
Particularly; Among the another kind of embodiment of rotary spatial separation CVD equipment of the present invention; Basic identical with the foregoing description, difference is, with said clear area one to one the bleeding point 4 of said supply system lay respectively at top, corresponding clear area; The pipeline 10 that is connected with bleeding point 4 finally converges to same device for absorbing tail gas 11, finally discharges through vacuum pump 12.Reduce the quantity of device for absorbing tail gas 11 and vacuum pump 12, reduced cost, simplified device of the present invention.
Particularly; Among another embodiment of rotary spatial separation CVD equipment of the present invention; Basic identical with the foregoing description, difference is, lays respectively at top, corresponding clear area with the outlet 3 of said supply system one to one of said clear area; The pipeline 10 that is connected with outlet 3 finally converges to same carrier gas source, can reach application target through adjustment valve 8.Reduced the quantity of carrier gas source, promptly the carrier gas source among Fig. 36, carrier gas source 9 and other carrier gas source only need keep one, have reduced cost, simplify device of the present invention.
Particularly; Among another embodiment of rotary spatial separation CVD equipment of the present invention; Basic identical with the foregoing description, difference is, lays respectively at corresponding reaction zone top with the outlet 3 of said supply system one to one of said reaction zone; The pipeline 10 that is connected with outlet 3 finally converges to same precursor source 5, can reach application target through adjustment valve 8.Reduce the quantity of precursor source 5, reduced cost, simplified device of the present invention.
Particularly; Among another embodiment of rotary spatial separation CVD equipment of the present invention; Basic identical with the foregoing description; Difference is that the pipeline 10 that is connected with outlet 3 finally converges to same precursor source 5 and same carrier gas source respectively, and the pipeline 10 that is connected with bleeding point 4 finally converges to same device for absorbing tail gas 11.In a word, the embodiment that the quantity of precursor source, carrier gas source, valve, device for absorbing tail gas and vacuum pump and annexation are not limited to put down in writing in the literary composition can adjust accordingly when reality is used as required.
Above-mentionedly being merely preferred embodiment of the present invention, is not to be used for limiting the scope that the present invention implements.Be that all equalizations of doing according to claims of the present invention change and modification, be claim of the present invention and contain.
Claims (18)
1. rotary spatial separation chemical vapor deposition CVD method; It is characterized in that; Comprise: substrate is at the reaction cavity internal rotation; Through the intravital a plurality of reaction zones of said reaction chamber, said reaction zone obtains presoma through supply system successively, and said presoma is adsorbed on the surface of said substrate when the reaction zone of said substrate through said presoma place; Be adsorbed between the different said presoma of said substrate surface chemical reaction takes place, generate the film that is deposited on said substrate surface.
2. the method for claim 1 is characterized in that, this method also comprises: also through being arranged on the clear area between two adjacent said reaction zones that obtain different said presomas, said clear area obtains carrier gas through said supply system in said substrate.
3. method as claimed in claim 2 is characterized in that, obtain said presoma or said carrier gas comprises through said supply system: said supply system is injected said presoma and/or said carrier gas to said reaction zone; After stopping to inject said presoma and/or said carrier gas, said supply system with said carrier gas and/or the said presoma of failing to be adsorbed on said substrate surface take away.
4. the method for claim 1 is characterized in that, this method also comprises: with said substrate heat, refrigeration, illumination or making alive handle.
5. method as claimed in claim 4 is characterized in that, the treatment temp of said substrate is-20 ℃ to 1000 ℃.
6. the method for claim 1 is characterized in that, this method also comprises: with the processing of heating or freeze of said presoma.
7. method as claimed in claim 6 is characterized in that, the treatment temp of said presoma is-20 ℃ to 500 ℃.
8. the method for claim 1 is characterized in that, said substrate is 1 rev/min to 100 rev/mins at the rotating speed of said reaction cavity internal rotation.
9. a rotary spatial separation chemical vapor deposition CVD equipment is characterized in that, comprising:
Reaction cavity, set inside have a plurality of reaction zones;
Swivel arrangement is arranged at said reaction cavity inside, is used to make substrate at said reaction cavity internal rotation; And
Supply system is arranged at said reaction zone top, is used to make said reaction zone to obtain presoma.
10. equipment as claimed in claim 9 is characterized in that, said reaction cavity inside also is provided with the clear area, and said clear area is arranged between two adjacent said reaction zones that obtain different presomas;
Said supply system also is arranged at top, said clear area, is used to make said clear area to obtain carrier gas.
11. equipment as claimed in claim 10 is characterized in that, said supply system comprises:
Outlet is arranged at said reaction zone or said clear area top;
Bleeding point is set up in parallel with said outlet;
Precursor source and carrier gas source are connected with said outlet respectively through valve and pipeline; And
Vacuum pump is connected with said bleeding point through said pipeline.
12. equipment as claimed in claim 11 is characterized in that, the exit of said carrier gas source is provided with mass flow controller.
13. equipment as claimed in claim 11 is characterized in that, also is provided with device for absorbing tail gas between said vacuum pump and the said bleeding point.
14. equipment as claimed in claim 11 is characterized in that, the distance of said outlet and said swivel arrangement is 2mm to 200mm.
15. equipment as claimed in claim 11 is characterized in that, said supply system also comprises heating/refrigeration plant and temp probe.
16. equipment as claimed in claim 9 is characterized in that, also is provided with heating/refrigeration plant and temp probe in the said reaction cavity.
17. equipment as claimed in claim 9 is characterized in that, the rotating speed of said swivel arrangement is 1 rev/min to 100 rev/mins.
18. equipment as claimed in claim 9 is characterized in that, said swivel arrangement comprises:
Swinging strut;
PWR PLT are connected with said swinging strut, are used to drive said swinging strut rotation; And
Anchor clamps are arranged on the said swinging strut, are used for fixing said substrate.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109763116A (en) * | 2019-01-30 | 2019-05-17 | 西北工业大学 | Dual axis orthogonal rotary system and method for CVD equipment |
| CN113265644A (en) * | 2021-04-04 | 2021-08-17 | 上海尚享信息科技有限公司 | Chemical vapor deposition equipment based on sensitive element manufacturing |
| WO2024109529A1 (en) * | 2022-11-25 | 2024-05-30 | 江苏微导纳米科技股份有限公司 | Method and device for depositing thin film, and thin film |
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| CN101050523A (en) * | 2006-04-06 | 2007-10-10 | 周星工程股份有限公司 | Method of forming oxide film and oxide deposition apparatus |
| CN101589171A (en) * | 2006-03-03 | 2009-11-25 | 普拉萨德·盖德吉尔 | Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films |
| CN101611167A (en) * | 2007-02-12 | 2009-12-23 | 东京毅力科创株式会社 | Atomic layer deposition system and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109763116A (en) * | 2019-01-30 | 2019-05-17 | 西北工业大学 | Dual axis orthogonal rotary system and method for CVD equipment |
| CN109763116B (en) * | 2019-01-30 | 2020-11-06 | 西北工业大学 | Dual-axis orthogonal rotation system and method for CVD equipment |
| CN113265644A (en) * | 2021-04-04 | 2021-08-17 | 上海尚享信息科技有限公司 | Chemical vapor deposition equipment based on sensitive element manufacturing |
| CN113265644B (en) * | 2021-04-04 | 2022-12-06 | 江苏煌灿新材料科技有限公司 | Chemical vapor deposition equipment based on sensitive element manufacturing |
| WO2024109529A1 (en) * | 2022-11-25 | 2024-05-30 | 江苏微导纳米科技股份有限公司 | Method and device for depositing thin film, and thin film |
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Application publication date: 20120530 |