CN102560424A - Vacuum multi-cavity atomic layer deposition equipment - Google Patents
Vacuum multi-cavity atomic layer deposition equipment Download PDFInfo
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- CN102560424A CN102560424A CN2012100126725A CN201210012672A CN102560424A CN 102560424 A CN102560424 A CN 102560424A CN 2012100126725 A CN2012100126725 A CN 2012100126725A CN 201210012672 A CN201210012672 A CN 201210012672A CN 102560424 A CN102560424 A CN 102560424A
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Abstract
The invention relates to vacuum multi-cavity atomic layer deposition equipment which aims to solve the technical problems of long time consumption, low yield, complicated equipment structure and high manufacturing cost in the existing technical film forming process. The vacuum multi-cavity atomic layer deposition equipment is structurally characterized in that the existing reaction cavity structure is adjusted; each precursor is provided with an independent reaction cavity; each reaction cavity is provided with a vacuum pump, an energy source device is arranged in at least one of the reaction cavities; the precursors are arranged in the other reaction cavities; and a sheet storage device, a cooling device and the reaction cavities are connected and communicated with a conveying device. With the adoption of the vacuum multi-cavity atomic layer deposition equipment, the cavities capable of generating an atomic layer thickness thin film can be taken as a set of cavities according to reaction demands and output requirements on the basis and can also be multiply loaded. The vacuum multi-cavity atomic layer deposition equipment adopts an annular cavity body structure, a rectangular cavity body structure and a circular cavity body structure and can be widely applied to the field of thin film coating of metal, glass, silicon slices, plastics, templates and other matrix materials.
Description
Technical field
The present invention relates to a kind of equipment of atomic shell vapour deposition, be applied to atomic shell gas phase deposition technology under the vacuum, belong to the film coating field.
Background technology
Ald (Atomic layer deposition is called for short ALD) technology is the film deposition techniques of forefront.Its principle is through the pulse of gas phase presoma alternately being fed reactor drum and chemisorption and reaction on the deposition matrix, and in layer forms a kind of method of deposited film with the form of monatomic film.In deposition process, first kind of reaction precursor body (precursor) is input to substrate material surface and remains on the surface through chemisorption (saturated absorption).When second kind of presoma feeds reactor drum; Can at first be adsorbed on first kind of precursor surface, a kind of activation energy is provided then, let two kinds of presomas react; And produce corresponding by product and take out through vacuum apparatus; Form the reactive film of an atomic layer level thickness, repeat this cycle, until the film that forms desired thickness.This film technique can be grown extremely thin film on matrix, can accurately control the thickness of film, can on the matrix of Any shape, carry out the covering near 100%.
There is following problem in traditional ALD equipment in the process that is the matrix overlay film: (1) different precursors feed reaction chamber according to chronological order, and matrix reacts with the precursor that feeds this cavity in order in reaction chamber, and film process is consuming time long; (2) institute of film process all accomplishes in a reaction chamber in steps, and a reaction chamber can only carry out overlay film for the matrix of a chamber capacity at every turn, yields poorly; Need the regular hour to reach steady state when (3) precursor feeds reaction chamber, and steps such as the switching of control precursor, purging also can take the regular hour, prolong the overlay film time of entire equipment thus; (4) steps such as the switching of control precursor, purging require device structure complicated, have strengthened manufacturing cost.
Summary of the invention
The objective of the invention is to solve prior art film process length consuming time, yield poorly, device structure complicacy and the high technical barrier of manufacturing cost.The present invention has adjusted original reaction chamber structure; Precursor is fed a reaction chamber according to chronological order; And in a reaction chamber, accomplish the whole film covering structure of process; It is improved to each precursor has an independently reaction chamber, in each reaction chamber, accomplish a reactions step, and then accomplish the whole film covering structure of process.
For realizing above-mentioned purpose, the present invention adopts following technical proposals: a kind of vacuum multi-cavity atomic layer deposition apparatus comprises refrigerating unit and deposits the sheet device.Its structure is: each precursor has an independently reaction chamber, and each reaction chamber all has a vacuum pump, is provided with the energy derive device at least one reaction chamber therein; In other reaction chamber, be provided with precursor, above-mentioned sheet device, refrigerating unit and the reaction chamber deposited joins with transport unit and communicates.This equipment can be a cover cavity with the cavity that can generate one deck atomic layer level thickness film according to reaction needed and output requirement on this basis also, can load at double.
The present invention adopts the cavity configuration of annular housing structure, rectangle cavity configuration and annular.
Principle of work: each precursor has an independently reaction chamber; In deposition process, keep the feeding state always; Matrix (can be materials such as metal, glass, silicon chip, plastics, template) is through transport unit (can be mechanical manipulator, travelling belt, rotating disk, screw thread etc.) cyclic motion between each chamber; And under the effect of energy derive device (plasma body, well heater, ultraviolet ray, infrared rays, light source etc.), react with the intravital precursor of different cavity and accomplish the overlay film process, form required film.The energy derive device can exist with reaction chamber form independently, also can be loaded in one of them required reaction chamber of reaction, and the reaction conditions that reaches according to the precursor needs is provided with.This equipment can have a plurality of reaction chambers, a plurality of transport unit, carries out the loading of number of cavities according to reaction needed.
The present invention has solved the problem that traditional ALD equipment exists preferably; And have following advantage: (1) has a plurality of reaction chambers; Each precursor has independently reaction chamber; Matrix can generate required film with different precursor direct reaction in each reaction chamber, improved the efficient of atomic layer deposition apparatus; (2) different step of film process is carried out in different reaction chambers, and a plurality of matrixes can carry out overlay film in order simultaneously in each reaction chamber, greatly improved output; (3) each reaction chamber feeds a kind of precursor all the time, need not control the step such as switching, purging of precursor, has reduced the reaction times; (4) need not add the structure of steps such as control precursor switching, purging, reduce equipment cost.The present invention can realize that a plurality of matrixes carry out the technology of overlay film in order simultaneously in each reaction chamber, and rate of film build is fast, output is high.Convenient, application widely that this atomic layer deposition apparatus has at aspects such as chip manufacturing, battery, sun power, military affairs, mover, medical treatment.
Description of drawings
Fig. 1 is a structural representation of the present invention, also is embodiments of the invention one.
Fig. 2 is embodiments of the invention two.
Fig. 3 is embodiments of the invention three.
Embodiment
Embodiment one
With reference to Fig. 1, this equipment is an annular cavity configuration, and it comprises cooling system 8, deposits sheet device 7, wherein is respectively equipped with reaction chamber A11, reaction chamber B1 and reaction chamber C3 around transport unit 6.Above-mentioned reaction chamber A11, reaction chamber B1 and reaction chamber C3 are connected with vacuum pump A10, vacuum pump B2, vacuum pump C5 through pipeline respectively.Also be respectively equipped with precursor A12 and precursor B13 on above-mentioned reaction chamber A11 and the reaction chamber B1.Energy derive device A4 is housed in the above-mentioned reaction chamber C3.In the cavity at above-mentioned transport unit 6 places vacuum pump D9 is installed.
Above-mentioned reaction chamber all is the cavity of a vacuum; From deposit the sheet device, take out matrix in each reaction chamber upper conveyor; Matrix delivered to earlier among the reaction chamber A react with precursor A; Deliver to then among the reaction chamber B and react with precursor B, next delivering to reacts under the reaction conditions that the energy derive device provides among the reaction chamber C generates the film of an atomic layer level thickness.Constantly repeat this step,, at last matrix is sent into to be put back into after cooling system cools off and deposit in the sheet device until the film that generates desired thickness.Transport unit can carry several matrixes in different cavitys, to react respectively in order, is implemented in thus to accomplish a reactions step in each reaction chamber and then accomplish the whole film covering structure of process.The quantity of reaction chamber can be a cover with the cavity that generates an atomic layer level thickness film as required, carries out loading at double.
Embodiment two
With reference to Fig. 2, this equipment is a rectangle reaction structure, and it comprises cooling system 8, deposits sheet device 7, and wherein transport unit 6 laterally arranges with reaction chamber A11, reaction chamber B1 and reaction chamber C3.Above-mentioned reaction chamber A11, reaction chamber B1 and reaction chamber C3 are connected with vacuum pump A10, vacuum pump B2, vacuum pump C5 through pipeline respectively.Also be respectively equipped with precursor A12 and precursor B13 on above-mentioned reaction chamber A11 and the reaction chamber B1.Energy derive device A4 is housed in the above-mentioned reaction chamber C3.
Above-mentioned each reaction chamber all is a vacuum cavity; Transport unit takes out matrix 14 from deposit the sheet device; Matrix 14 delivered to earlier among the reaction chamber A11 react with precursor A12; Deliver to then among the reaction chamber B1 and react with precursor B13, next delivering to reacts under the reaction conditions that energy derive device A4 provides among the reaction chamber C3 generates the film of an atomic layer level thickness.Transport unit 6 drives matrix constantly in each reaction chamber internal recycle reaction, until the film that generates desired thickness, at last matrix is sent into to be put back into after cooling system 8 cools off and deposits in the sheet device 7.Transport unit 6 can carry several matrixes in different cavitys, to react respectively simultaneously, is implemented in thus to accomplish a reactions step in each reaction chamber and then accomplish the whole film covering structure of process.With existing cavity is a cover, and this equipment can be a cover with the cavity that generates an atomic layer level thickness film according to reaction needed and output requirement also, loading at double.At double the loading of carrying out cavity on this basis.If the precursor that reacts required is relatively more responsive; Or react easily between two kinds of precursors; Can also between two reaction chambers, add an adapter cavity; Make matrix move to adapter cavity from reaction chamber A11 and vacuumize, remove residual precursor A12 and move among the reaction chamber B1 afterwards again, B13 reacts with precursor.Be implemented in thus and accomplish a reactions step in each reaction chamber and then accomplish the whole film covering structure of process.
Embodiment three
With reference to Fig. 3, this equipment is the cavity configuration of an annular, and it comprises cooling system 8, deposits sheet device 7, wherein around transport unit 6 and reaction chamber A11, reaction chamber B1, reaction chamber C3, reaction chamber D17, reaction chamber E20 and reaction chamber F22.Above-mentioned reaction chamber A11, reaction chamber B1, reaction chamber C3, reaction chamber D17, reaction chamber E20 and reaction chamber F22 are connected with vacuum pump A10, vacuum pump B2, vacuum pump C5, vacuum pump D9, vacuum pump E19, vacuum pump F21 through pipeline respectively.Also be respectively equipped with precursor A12, precursor B13, precursor D15, precursor E18 on above-mentioned reaction chamber A11, reaction chamber B1, reaction chamber D17 and the reaction chamber E20.Energy derive device A4 is housed in the above-mentioned reaction chamber C3; Energy derive device B16 is housed in the reaction chamber F22.
Above-mentioned reaction chamber is arranged in circular, is convenient to matrix intravital circulation in each chamber.Each reaction chamber all is a vacuum cavity; Transport unit takes out matrix from deposit sheet device 7; Driving matrix reacts with precursor in reaction chamber A11, reaction chamber B1; Then matrix is moved among the reaction chamber C3 that energy derive device A4 is housed, under the reaction conditions that the energy derive device provides, reacting generates the film of an atomic layer level thickness.Move then matrix in reaction chamber D17, reaction chamber E20 with each chamber in precursor react; Next matrix is sent among the reaction chamber F22 that energy derive device B16 is housed, and under the reaction conditions that the energy derive device provides, generates the film of two atomic layer level thickness.Constantly repeat this step,, at last matrix is sent into to be put back into after cooling system cools off and deposit in the sheet device until the film that generates desired thickness.Transport unit can carry several matrixes in different cavitys, to react respectively simultaneously, is implemented in thus to accomplish a reactions step in each reaction chamber and then accomplish the whole film covering structure of process.This equipment can be a cover with the cavity that generates an atomic layer level thickness film according to reaction needed and output requirement also, loading at double.Be a cover cavity with reaction chamber A11, B1 and C3 on this basis, loading at double.If the precursor that reacts required is relatively more responsive; Or react easily between two kinds of precursors; Can also between two reaction chambers, add an adapter cavity; Make matrix move to adapter cavity earlier and vacuumize, remove residual precursor and move to again in the reaction chamber that another precursor is housed afterwards, react with another kind of precursor from the reaction chamber that precursor is housed.Be implemented in thus and accomplish a reactions step in each reaction chamber and then accomplish the whole film covering structure of process.
Claims (5)
1. vacuum multi-cavity atomic layer deposition apparatus; Comprise refrigerating unit and deposit the sheet device; It is characterized in that: each precursor has an independently reaction chamber, and each reaction chamber all has a vacuum pump, is provided with the energy derive device at least one reaction chamber therein; In other reaction chamber, be provided with precursor; Above-mentioned sheet device, refrigerating unit and the reaction chamber deposited joins with transport unit and communicates; This equipment is a cover cavity with the cavity that can generate one deck atomic layer level thickness film, can load at double, and above-mentioned reaction chamber all is the cavity of a vacuum.
2. vacuum multi-cavity atomic layer deposition apparatus as claimed in claim 1 is characterized in that: described equipment adopts the cavity configuration of annular housing structure, rectangle cavity configuration and annular.
3. vacuum multi-cavity atomic layer deposition apparatus as claimed in claim 2; It is characterized in that: this equipment is an annular cavity configuration; It comprises cooling system and deposits the sheet device; Wherein be respectively equipped with reaction chamber A, reaction chamber B and reaction chamber C around transport unit, above-mentioned reaction chamber A, reaction chamber B and reaction chamber C are connected with vacuum pump A, vacuum pump B, vacuum pump C through pipeline respectively; Also be respectively equipped with precursor A and precursor B on above-mentioned reaction chamber A and the reaction chamber B; Energy derive device A is housed in the above-mentioned reaction chamber C; In the cavity at above-mentioned transport unit place vacuum pump D is installed.
4. vacuum multi-cavity atomic layer deposition apparatus as claimed in claim 2; It is characterized in that: this equipment is a rectangle reaction structure; It comprises cooling system and deposits the sheet device; Wherein transport unit and reaction chamber A, reaction chamber B and reaction chamber C laterally arrange, and above-mentioned reaction chamber A, reaction chamber B and reaction chamber C are connected with vacuum pump A, vacuum pump B, vacuum pump C through pipeline respectively; Also be respectively equipped with precursor A and precursor B on above-mentioned reaction chamber A and the reaction chamber B; Energy derive device A is housed in the above-mentioned reaction chamber C.
5. vacuum multi-cavity atomic layer deposition apparatus as claimed in claim 2; It is characterized in that: this equipment is the cavity configuration of an annular; It comprises cooling system and deposits the sheet device; Wherein around transport unit and reaction chamber A, reaction chamber B, reaction chamber C, reaction chamber D, reaction chamber E and reaction chamber F, above-mentioned reaction chamber A, reaction chamber B, reaction chamber C, reaction chamber D, reaction chamber E and reaction chamber F are connected with vacuum pump A, vacuum pump B, vacuum pump C, vacuum pump D, vacuum pump E, vacuum pump F through pipeline respectively; Also be respectively equipped with precursor A, precursor B, precursor D, precursor E on above-mentioned reaction chamber A, reaction chamber B, reaction chamber D and the reaction chamber E; Energy derive device A is housed in the above-mentioned reaction chamber C; Energy derive device B is housed in the reaction chamber F.
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| CN2012100126725A CN102560424A (en) | 2012-01-16 | 2012-01-16 | Vacuum multi-cavity atomic layer deposition equipment |
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| CN2012100126725A CN102560424A (en) | 2012-01-16 | 2012-01-16 | Vacuum multi-cavity atomic layer deposition equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107604328A (en) * | 2017-08-04 | 2018-01-19 | 上海交通大学 | A kind of fuel battery metal double polar plate highly effective ring vacuum coater |
| CN111676465A (en) * | 2020-07-15 | 2020-09-18 | 武汉华星光电半导体显示技术有限公司 | ALD deposition apparatus and ALD deposition method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060073276A1 (en) * | 2004-10-04 | 2006-04-06 | Eric Antonissen | Multi-zone atomic layer deposition apparatus and method |
| CN201386135Y (en) * | 2009-04-03 | 2010-01-20 | 中国科学院沈阳科学仪器研制中心有限公司 | Full-automatic large flat PECVD silicon nitride membrane preparation system |
| CN101768731A (en) * | 2008-12-29 | 2010-07-07 | K.C.科技股份有限公司 | Atomic layer deposition apparatus |
-
2012
- 2012-01-16 CN CN2012100126725A patent/CN102560424A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060073276A1 (en) * | 2004-10-04 | 2006-04-06 | Eric Antonissen | Multi-zone atomic layer deposition apparatus and method |
| CN101768731A (en) * | 2008-12-29 | 2010-07-07 | K.C.科技股份有限公司 | Atomic layer deposition apparatus |
| CN201386135Y (en) * | 2009-04-03 | 2010-01-20 | 中国科学院沈阳科学仪器研制中心有限公司 | Full-automatic large flat PECVD silicon nitride membrane preparation system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107604328A (en) * | 2017-08-04 | 2018-01-19 | 上海交通大学 | A kind of fuel battery metal double polar plate highly effective ring vacuum coater |
| CN111676465A (en) * | 2020-07-15 | 2020-09-18 | 武汉华星光电半导体显示技术有限公司 | ALD deposition apparatus and ALD deposition method |
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