CN101333648A - Atomic layer deposition device and Atomic layer deposition method - Google Patents
Atomic layer deposition device and Atomic layer deposition method Download PDFInfo
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- CN101333648A CN101333648A CNA2007101126628A CN200710112662A CN101333648A CN 101333648 A CN101333648 A CN 101333648A CN A2007101126628 A CNA2007101126628 A CN A2007101126628A CN 200710112662 A CN200710112662 A CN 200710112662A CN 101333648 A CN101333648 A CN 101333648A
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Abstract
The invention relates to an atomic layer deposition device and an atomic layer deposition method, the atomic layer deposition device comprises a reaction chamber provided with a plurality of secondary reaction chambers, a conveying apparatus and a plurality of wafer carriers, the secondary reaction chambers are arranged on a conveying path, the conveying apparatus conveys the plurality of wafer carriers along the conveying path, so each wafer carrier can be relatively matched with each secondary reaction chamber sequentially to form the closed reaction environment. Wherein, each secondary reaction chamber is respectively kept with a chemical atmosphere state suitable for reaction, and each wafer to be deposited is sequentially utilized to complete the atomic layer deposition process with different steps through different atmospheres matched in each secondary reaction chamber.
Description
Technical field
The invention relates to a kind of apparatus for atomic layer deposition and Atomic layer deposition method, particularly finish the method for ald relevant for a kind of deposition apparatus by a plurality of secondary responses chamber with different chemical atmosphere.
Background technology
Atomic layer deposition method (Atom layer deposition; ALD) be a kind of chemical vapour deposition (Chemical vapor deposition; CVD), under the atmosphere of its characteristic for the precursor gas that the sedimentary wafer of desire is exposed in regular turn two or more and tool complementary characteristic in reaction chamber, utilize the response characteristic of self-limit (self-limiting), carry out selective chemical absorption in wafer surface, become to grow one deck film of atom level thickness very uniformly, according to the difference of needed film thickness and characteristic, repeat the processing step of ald.
Yet, cvd reactive chamber is feeding between the different reaction atmospheres, the step that must carry out peace and quiet reaction chamber earlier takes place to prevent gas-phase reaction, desire to finish needed film thickness, the step that often need repeat to feed (pulse) precursor gas and blow off (purge) reaction chamber, like this because of the different atmosphere of need displacement, even or comprise the conversion of temperature, with regard to general single atomic layer deposition reaction chamber, need the suitable process time to finish one deck ideal ald film, and cause the low of output usefulness.
In addition; for the deposition of precursor on the substrate surface functional group can be reached capacity; usually can feed excessive precursor and guarantee that surface functionalities is by complete reaction; therefore the precursor gas that generally enters in the reaction chamber has only 5%～20% to be used to form film, and the step that blows off afterwards will remove in the complete autoreaction of the remaining precursor gas chamber.Along with the semiconductor subassembly micro, precursor gas is expensive day by day, so not only wastes precursor gas, makes that more the cost of ald is high.
Summary of the invention
Therefore one of purpose of the present invention is to provide a kind of apparatus for atomic layer deposition, can directly finish the different step of a technology, do not need in single secondary response chamber transformation temperature and atmosphere in turn, and significantly shorten time of atom layer deposition process, can be directly and finish deposition fast or remove technology, in order to improve the complicated low problem of output usefulness that causes of the sedimentary technology of conventional atomic layer.
Another object of the present invention is to provide a kind of Atomic layer deposition method, the sedimentary technology of conventional atomic layer is complicated to cause the low problem of output usefulness in order to improve, and improves the shortcoming that the conventional atomic layer depositing operation can cause wastage of material so that can't reduce cost.
For reaching above-mentioned purpose, the invention provides a kind of apparatus for atomic layer deposition, it comprises e Foerderanlage, reaction chamber and a plurality of wafer carrying bench.Described e Foerderanlage has transport path, and described reaction chamber separates into a plurality of secondary responses chamber, and each secondary response chamber is disposed on the transport path in regular turn.
Particularly, apparatus for atomic layer deposition of the present invention can comprise at least:
One e Foerderanlage has a transport path;
One reaction chamber, this reaction chamber has the port of entering and sends the port, and be provided with at least one interlayer to separate into a plurality of secondary responses chamber, these secondary response chambers dispose in regular turn along transport path, the described port that enters is communicated in along a secondary response chamber of transport path configuration, and the described port of sending is communicated in along another secondary response chamber of transport path configuration; And
A plurality of wafer carrying bench are located on the e Foerderanlage, and each wafer carrying bench has protective cover;
Wherein, described e Foerderanlage is carried each wafer carrying bench along transport path, so that each wafer carrying bench forms airtight reaction environment with each secondary response chamber relative engagement in regular turn.
Utilize apparatus for atomic layer deposition of the present invention, e Foerderanlage is carried each wafer carrying bench in regular turn along transport path, from entering the port, make each wafer carrying bench and each secondary response chamber relative engagement form airtight reaction environment, each secondary response chamber is kept the reaction atmosphere that is fit to the deposition precursor thing or removes precursor respectively.When wafer enters in the secondary response chamber, because reaction chamber is dynamically to maintain suitable temperature and atmosphere, so can be directly and finish deposition fast or remove technology.By the chemical atmosphere state of keeping suitable reactions in each secondary response chamber respectively, make the sedimentary wafer of each desire finish the atom layer deposition process of different step in regular turn by the different atmosphere of arranging in pairs or groups mutually in each secondary response chamber, will finish sedimentary wafer at last and send from sending Bu Chu.
In the apparatus for atomic layer deposition of the present invention, described reaction chamber can comprise air extractor, in order to remove the reaction atmosphere that leaks in the secondary response chamber.
In the apparatus for atomic layer deposition of the present invention, each secondary response chamber can have independently heating unit, can be used for regulating the temperature of wafer to cooperate the reaction atmosphere of each secondary response chamber.
In the apparatus for atomic layer deposition of the present invention, the described port that enters can be communicated in along first secondary response chamber of transport path configuration, sends the port and can be communicated in along last secondary response chamber of transport path configuration.
In the apparatus for atomic layer deposition of the present invention, described each wafer carrying bench can have bleed line, with air extractor set in the complex reaction chamber.
In the apparatus for atomic layer deposition of the present invention, described e Foerderanlage can be rotary seat or conveying belt etc.
Apparatus for atomic layer deposition of the present invention also can comprise the deposition window corresponding to each secondary response chamber, in order to sedimentary each wafer surface of desire is exposed among the reaction atmosphere of its pairing secondary response chamber.
The present invention provides a kind of Atomic layer deposition method in addition, comprise and utilize apparatus for atomic layer deposition, the sedimentary wafer of desire is sent in a plurality of secondary responses chamber in regular turn, temperature in each secondary response chamber and atmosphere maintain under the condition that is fit to deposition precursor thing or removing precursor in advance, finish the different step of atom layer deposition process by the difference of the chemical atmosphere state in each secondary response chamber.
Atomic layer deposition method of the present invention utilizes a kind of apparatus for atomic layer deposition with e Foerderanlage and a plurality of secondary responses chamber to replace traditional deposition apparatus, in having presetted required reaction atmosphere of each processing step and condition in the reaction chamber each time, along with e Foerderanlage is sent wafer in the secondary response chamber in regular turn, can directly finish the different step (for example deposition precursor thing and removing precursor step) of technology.
Particularly, Atomic layer deposition method of the present invention can comprise step at least:
A plurality of wafers are placed respectively on a plurality of wafer carrying bench; And
Carry these wafer carrying bench: utilize an e Foerderanlage that those wafer carrying bench are admitted in a plurality of secondary responses chamber that a reaction chamber comprised in regular turn along a transport path, described wafer carrying bench forms airtight reaction environment with described secondary response chamber relative engagement respectively;
Keep in described each secondary response chamber respectively at a reaction atmosphere, make each wafer finish the different step of atom layer deposition process respectively.
In the Atomic layer deposition method of the present invention, described each secondary response chamber can have heating unit, can be used for regulating the temperature of wafer to cooperate the reaction atmosphere of described each secondary response chamber.
In the Atomic layer deposition method of the present invention, described each wafer carrying bench can begin to enter each secondary response chamber along described transport path in regular turn to react from the set port that enters of reaction chamber, finishes behind the depositing operation via set the sending Bu Chu and will finish each sedimentary wafer and be sent from e Foerderanlage of reaction chamber again.
In the Atomic layer deposition method of the present invention, the reaction atmosphere in described each secondary response chamber can be respectively precursor gas or rare gas element.
Atomic layer deposition method of the present invention also can further comprise when the wafer carrying bench transfer wafers, closes the set protective cover of wafer carrying bench to protect the wafer on this wafer carrying bench and to prevent the step that reaction atmosphere leaks.
Atomic layer deposition method of the present invention also can further comprise when wafer leaves in each secondary response chamber, utilizes the set bleed line of wafer carrying bench to remove the step of the by product of reaction.
Compare with method in the past, Atomic layer deposition method of the present invention can save in single reactor and take turns the time of transformation temperature and atmosphere, thereby can significantly shorten the time of atom layer deposition process.In addition, the precursor gas in the reaction chamber can be reused continuously each time, and unnecessary precursor gas need not be eliminated, and can reduce the waste of precursor gas by this, reaches the purpose that reduces cost.
In addition, reaction chamber separates into a plurality of secondary responses chamber, and having presetted required reaction atmosphere of each processing step and condition in each secondary response chamber can the phase mutual interference.
Description of drawings
Fig. 1 illustrates the secondary response chamber of apparatus for atomic layer deposition of one embodiment of the invention and the decomposing schematic representation of wafer carrying bench.
Fig. 2 illustrates the secondary response chamber among Fig. 1 and the combination synoptic diagram of wafer carrying bench.
Fig. 3 is the synoptic diagram that illustrates the apparatus for atomic layer deposition of one embodiment of the invention.
Fig. 4 illustrates the synoptic diagram of the apparatus for atomic layer deposition of an embodiment more of the present invention.
Main nomenclature among the figure:
100 wafer carrying bench, 110 protective covers, 120 heating units
130 air extractors, 131 pneumatic pumps, 132 bleed lines
133 secondary response chamber bleed lines, 134 wafer carrying bench bleed lines, 140 wafers
200 secondary response chamber first parts, 210 diffusers, 220 deposition windows
250 secondary response chamber second sections, 300 apparatus for atomic layer deposition, 310 reaction chambers
320 rotary seats first set reaction chambers 322 321 are reaction chamber for the second time
323 reaction chamber 324 the 4th secondary response chamber 330 rotation axiss for the third time
351 enter port 352 sends port 400 apparatus for atomic layer deposition
410 conveying belt first set reaction chambers 412 411 are reaction chamber for the second time
The 5th secondary response chambers, reaction chamber 414 the 4th secondary response chamber 415 for the third time 413
The 7th secondary response chamber 418, secondary response chambers 417 416 the 6th the 8th reaction chamber
420 reaction chambers 451 enter port 452 and send the port
Embodiment
For above and other objects of the present invention, feature, advantage and embodiment can be become apparent, existing conjunction with figs. is described in detail as follows:
The apparatus for atomic layer deposition of one embodiment of the invention comprises an e Foerderanlage, a reaction chamber and a plurality of wafer carrying bench.
E Foerderanlage has transport path, and transport path can be the round-robin path, or conveying belt.Reaction chamber has the port of entering (entry port) and sends port (sending port), and is provided with at least one interlayer reaction chamber is separated into a plurality of secondary responses chamber, and each secondary response chamber disposes in regular turn along transport path.Enter the port and send the port and be communicated with one of them secondary response chamber respectively, according to a specific embodiment of the present invention, enter the port and be with first secondary response chamber of disposing on the transport path and be communicated with, sending the port is to be communicated with last secondary response chamber of transport path configuration.Reaction chamber has air extractor in order to remove the reaction atmosphere that leaks in the secondary response chamber.
A plurality of wafer carrying bench are located on the e Foerderanlage, carry each wafer carrying bench along transport path, make each wafer carrying bench form airtight reaction environment with each secondary response chamber relative engagement in regular turn.
Please refer to Figure 1 and Figure 2, illustrated the secondary response chamber and the wafer carrying bench of apparatus for atomic layer deposition of one embodiment of the invention.
Wafer carrying bench 100 has protective cover 110 and wafer carrying bench bleed line 134.Protective cover 110 is covered on the wafer carrying bench 100, can open according to need or close.When carrying out the precursor deposition step, protective cover 110 is opened so that precursor is deposited on the wafer; When finishing deposition step, protective cover 110 is closed with isolated wafer and extraneous contacting and is avoided polluting.Wafer carrying bench bleed line 134 is in order to connect air extractor, can adjust and keep the deposition pressure of reaction chamber, and remove residual reaction atmosphere when finishing deposition step.
The secondary response chamber comprises secondary response chamber first part 200 and secondary response chamber second section 250.Wherein, secondary response chamber first part 200 comprises diffuser 210, deposition window 220, secondary response chamber bleed line 133.Diffuser 210 can feed reaction atmosphere, and for example gas precursor or rare gas element maintain under the suitable environment atmosphere in the secondary response chamber.Secondary response chamber bleed line 133 can assist to remove remaining reaction atmosphere and the by product in precursor reaction back, and dynamically keeps the deposition pressure of reaction chamber.
Secondary response chamber second section 250 comprises heating unit 120 and air extractor 130.Heating unit 120 can be arranged at the below, position that each wafer carrying bench 100 stops, promptly under the wafer 140, in order to provide heat energy to regulate the temperature of wafer 140 equably.Air extractor 130 comprises pneumatic pump 131 and bleed line 132, can be connected with wafer carrying bench bleed line 134, in order to the deposition pressure of adjusting and keep reaction chamber at that time that takes place in deposition, and finish the back in deposition and assist to remove remaining reaction atmosphere and the by product in precursor reaction back.
As shown in Figure 2, the secondary response chamber can form a kind of sealing and circulating environment with wafer carrying bench 100.When wafer carrying bench 100 combines with the secondary response chamber, can open deposition window 220 and protective cover 110, the atmosphere in the secondary response chamber is contacted with wafer, carry out deposition step; When finishing deposition step, deposition window 220 is closed to avoid forerunner's atmosphere to leak, and protective cover 110 is also closed to prevent pollution.In whole atom layer deposition process, the atmosphere of reaction chamber can dynamically be maintained under the ideal mode of deposition by diffuser 210 and bleed line 133.
Please refer to shown in Figure 3ly, illustrated the apparatus for atomic layer deposition of one embodiment of the invention.Apparatus for atomic layer deposition 300 has an e Foerderanlage, a reaction chamber 310 and a plurality of wafer carrying bench 100.
The e Foerderanlage of apparatus for atomic layer deposition 300 is a rotary seat 320, and rotary seat 320 is the center rotation with rotation axis 330, and the direction of rotating according to rotary seat 320 can form transport path.Wafer carrying bench 100 is arranged on the rotary seat 320.
Atmosphere in each secondary response chamber is the characteristic according to required deposit film, is pre-formed the atmosphere or the rare gas element of different precursors in each secondary response chamber.And parameters such as its temperature, gaseous tension all are controlled under the condition that is fit to this precursor gas body or rare gas element reaction, make the atmosphere in the secondary response chamber keep deposition (or waiting to remove) state for the treatment of.
The sedimentary wafer of wafer carrying bench 100 carrying desires, can be from entering Bu351Chu, in regular turn with first set reaction chamber 321, for the second time reaction chamber 322, reaction chamber 323 and the 4th secondary response chamber 324 relative engagement form airtight reaction environment for the third time, and carry out deposition reaction.Last will finish sedimentary wafer and send, promptly finish atom layer deposition process from sending Bu352Chu.
The Atomic layer deposition method of the embodiment of the invention, be to utilize ald, the sedimentary wafer of desire is sent in a plurality of secondary responses chamber in regular turn, temperature in each secondary response chamber and atmosphere maintain under the ideal mode of deposition in advance and dynamically, finish the different step of atom layer deposition process by the atmosphere difference in each secondary response chamber.
According to one embodiment of the invention; the sedimentary wafer of desire enters first set reaction chamber 321 by wafer carrying bench 100 from entering port 351; form a kind of sealing and circulating environment with first set reaction chamber 321; atmosphere in the first set reaction chamber 321 and environment are controlled at and are fit under the sedimentary condition of first precursor at this moment; and the deposition window of unlatching first set reaction chamber 321 and the protective cover of wafer carrying bench 100; atmosphere in the first set reaction chamber 321 is contacted with wafer, carry out the first precursor deposition step.When finishing the deposition of first precursor, close the deposition window of first set reaction chamber 321 and the protective cover of wafer carrying bench 100, and rotary seat 320 is according to its transport path rotation, make wafer carrying bench 100 to the second time reaction chamber 322 places move.
When rotary seat 320 is transported to wafer carrying bench 100 for the second time reaction chamber 322 places; this wafer carrying bench 100 and a kind of sealing and circulating environment of reaction chamber 322 formation for the second time; and the deposition window of unlatching reaction chamber 322 second time and the protective cover of wafer carrying bench 100; atmosphere in the reaction chamber 322 second time is contacted with wafer; atmosphere in the reaction chamber 322 second time and environment are controlled at and are fit to remove under the condition of first precursor and by product at this moment; for example, be full of rare gas element, in order to blow off wafer.When finishing when removing step, close the deposition window of reaction chamber 322 and the protective cover of wafer carrying bench 100 for the second time, and rotary seat 320 rotations make wafer carrying bench 100 move to reaction chamber 323 places for the third time.
When rotary seat 320 is transported to wafer carrying bench 100 for the third time reaction chamber 323 places; wafer carrying bench 100 and a kind of sealing and circulating environment of reaction chamber 323 formation for the third time; the atmosphere in the reaction chamber 323 and environment were controlled at and were fit under the sedimentary condition of a kind of second precursor for the third time this moment; and open the deposition window of reaction chamber 323 and the protective cover of wafer carrying bench 100 for the third time; atmosphere in the reaction chamber 323 is for the third time contacted with wafer, carry out the second precursor deposition step.When finishing the deposition of second precursor, close the deposition window of reaction chamber 323 and the protective cover of wafer carrying bench 100 for the third time, and rotary seat 320 rotations make wafer carrying bench 100 move to 324 places, the 4th secondary response chamber.
When rotary seat 320 is transported to 324 places, the 4th secondary response chamber with wafer carrying bench 100; wafer carrying bench 100 and the 4th secondary response chamber 324 form a kind of sealing and circulating environment; and open the deposition window of the 4th secondary response chamber 324 and the protective cover of wafer carrying bench 100; atmosphere in the 4th secondary response chamber 324 is contacted with wafer; atmosphere in the 4th secondary response chamber 324 and environment are controlled at and are fit to remove under the condition of second precursor and by product, in order to blow off wafer at this moment.When finishing the removing step; close the deposition window of the 4th secondary response chamber 324 and the protective cover of wafer carrying bench 100; wafer can be sent to finish a kind of round-robin atom layer deposition process through sending port 352; or continue to carry out repeatedly the round-robin ald, again wafer is sent from sending port 352 until reaching required film thickness.
According to another embodiment of the present invention, when finishing the step of removing second precursor, wafer is not sent through sending port 352, but according to required sedimentary film thickness, be repeated between each the secondary response chamber on the transport path on this rotary seat touring, carry out a plurality of round-robin technologies, till reaching required film thickness.
According to another embodiment of the present invention, the removing step of precursor can not need to carry out in each secondary response chamber, but utilizes in the wafer carrying bench bleed line 134 of wafer carrying bench 100 and the complex reaction chamber set air extractor 130 to remove reaction atmosphere and by products remaining in the wafer carrying bench 100.First set reaction chamber 321, for the second time reaction chamber 322, reaction chamber 323 and the 4th secondary response chamber 324 can feed different precursor gas respectively for the third time.Wafer carrying bench 100 is transported to the deposition that first precursor is carried out in first set reaction chamber 321; after the deposition of finishing first precursor; close the deposition window of first set reaction chamber 321 and the protective cover of wafer carrying bench 100, utilize in the wafer carrying bench bleed line 134 of wafer carrying bench 100 and the complex reaction chamber set air extractor 130 to remove reaction atmosphere and by products remaining in the wafer carrying bench 100 again.When wafer carrying bench 100 arrival reaction chambers 322 second time, in the second time reaction chamber 322 carry out the deposition of second precursor, after finishing the deposition of second precursor, utilize in the wafer carrying bench bleed line 134 of wafer carrying bench 100 and the complex reaction chamber set air extractor 130 to remove reaction atmosphere and by products remaining in the wafer carrying bench 100 again.
Same, when wafer carrying bench 100 is transported to reaction chamber 323 and 324 places, the 4th secondary response chamber for the third time, the deposition of the 3rd precursor and the 4th precursor be can carry out respectively, reaction atmosphere and by products remaining in the wafer carrying bench 100 removed with set air extractor 130 in the wafer carrying bench bleed line 134 of wafer carrying bench 100 and the complex reaction chamber more afterwards.
Please refer to shown in Figure 4ly, illustrated the apparatus for atomic layer deposition of yet another embodiment of the invention.Apparatus for atomic layer deposition 400 has e Foerderanlage, reaction chamber 420 and a plurality of wafer carrying bench 100.
The e Foerderanlage of apparatus for atomic layer deposition 400 is a round-robin conveying belt 410, and a plurality of wafer carrying bench 100 are arranged on the conveying belt 410, and conveying belt 410 can form the round-robin transport path with transfer wafers microscope carrier 100 along the direction of arrow shown in Fig. 4.
Atmosphere in each secondary response chamber is the characteristic according to required deposit film, is pre-formed the atmosphere or the rare gas element of different precursors in each secondary response chamber.And parameters such as its temperature, gaseous tension all are controlled under the condition that is fit to this precursor gas body or rare gas element reaction, make the atmosphere in the secondary response chamber keep deposition (or waiting to remove) state for the treatment of.
According to one embodiment of the invention, carry the wafer carrying bench 100 of the sedimentary wafer of desire, enter reaction chamber 420 from entering port 451, transport path according to conveying belt 410, in regular turn with first set reaction chamber 411, reaction chamber 412 for the second time, reaction chamber 413 for the third time, the 4th secondary response chamber 414, the 5th secondary response chamber 415, the 6th secondary response chamber 416, the 7th secondary response chamber 417 and the 8th secondary response chamber 418 relative engagement form airtight reaction environment, and according to the characteristic of required deposit film, be pre-formed the atmosphere or the inert gas atmosphere of different precursors in each secondary response chamber.
As the method shown in Fig. 3; when wafer carrying bench 100 enters each secondary response chamber; promptly open the deposition window of this reaction chamber and the protective cover of wafer carrying bench 100, the atmosphere in this reaction chamber is contacted with wafer, carry out the step of precursor deposition or removing precursor.When finishing the precursor deposition or removing the step of precursor; close the deposition window of this reaction chamber and the protective cover of wafer carrying bench 100; make wafer carrying bench 100 form the confined reaction environment with each secondary response chamber in regular turn along the transport path of conveying belt 410; carry out fixed precursor deposition step (or removing the precursor step), on wafer, to form required film.
By the embodiment of the invention described above as can be known, Atomic layer deposition method of the present invention is to utilize a kind of apparatus for atomic layer deposition with e Foerderanlage and a plurality of secondary responses chamber, finishes atom layer deposition process.Pre-according to required film characteristics (as thickness, desire settling etc.) prior to arranging required reaction atmosphere of each processing step and condition in each secondary response chamber properly, make and keep the state for the treatment of deposition (or removing) precursor in the secondary response chamber, along with the wafer carrying bench of bearing wafer is sent in each secondary response chamber in regular turn, can directly finish the different step of technology, do not need in single secondary response chamber transformation temperature and atmosphere in turn, and significantly shorten the time of atom layer deposition process.Moreover the precursor gas in the reaction chamber can be reused continuously each time, can reduce the waste of precursor gas, reaches the purpose that reduces cost.
Though the present invention discloses as above with a plurality of embodiment; right its is not in order to limit the present invention; any those of ordinary skill in the art; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is when with being as the criterion that claims were defined.
Claims (14)
1. apparatus for atomic layer deposition, this device comprises at least:
One e Foerderanlage has a transport path;
One reaction chamber, this reaction chamber has the port of entering and sends the port, and be provided with at least one interlayer to separate into a plurality of secondary responses chamber, these secondary response chambers dispose in regular turn along transport path, the described port that enters is communicated in along a secondary response chamber of transport path configuration, and the described port of sending is communicated in along another secondary response chamber of transport path configuration; And
A plurality of wafer carrying bench are located on the e Foerderanlage, and each wafer carrying bench has protective cover;
Wherein, described e Foerderanlage is carried each wafer carrying bench along transport path, so that each wafer carrying bench forms airtight reaction environment with each secondary response chamber relative engagement in regular turn.
2. apparatus for atomic layer deposition as claimed in claim 1, wherein said reaction chamber comprises air extractor, in order to remove the reaction atmosphere that leaks in described secondary response chamber.
3. apparatus for atomic layer deposition as claimed in claim 1, wherein said each secondary response chamber has independently heating unit.
4. apparatus for atomic layer deposition as claimed in claim 1, the wherein said port that enters is communicated in along first secondary response chamber of transport path configuration, and the described port of sending is communicated in along last secondary response chamber of transport path configuration.
5. apparatus for atomic layer deposition as claimed in claim 1, wherein said each wafer carrying bench has bleed line.
6. apparatus for atomic layer deposition as claimed in claim 1, wherein said e Foerderanlage are rotary seat.
7. apparatus for atomic layer deposition as claimed in claim 1, wherein said e Foerderanlage are conveying belt.
8. apparatus for atomic layer deposition as claimed in claim 1, this device also comprise the deposition window corresponding to each secondary response chamber, in order to sedimentary each wafer surface of desire is exposed among the reaction atmosphere of its pairing secondary response chamber.
9. Atomic layer deposition method, this method comprises step at least:
A plurality of wafers are placed respectively on a plurality of wafer carrying bench; And
Carry these wafer carrying bench: utilize an e Foerderanlage that those wafer carrying bench are admitted in a plurality of secondary responses chamber that a reaction chamber comprised in regular turn along a transport path, described wafer carrying bench forms airtight reaction environment with described secondary response chamber relative engagement respectively;
Keep in described each secondary response chamber respectively at a reaction atmosphere, make each wafer finish the different step of atom layer deposition process respectively.
10. Atomic layer deposition method as claimed in claim 9, wherein said each secondary response chamber has heating unit, is used to regulate the temperature of wafer to cooperate the reaction atmosphere of described each secondary response chamber.
11. Atomic layer deposition method as claimed in claim 9, wherein said each wafer carrying bench begins to enter each secondary response chamber along described transport path in regular turn to react from the set port that enters of reaction chamber, finishes behind the depositing operation via set the sending Bu Chu and will finish sedimentary each wafer and be sent from e Foerderanlage of reaction chamber again.
12. Atomic layer deposition method as claimed in claim 9, the reaction atmosphere in wherein said each secondary response chamber is respectively precursor gas or rare gas element.
13. Atomic layer deposition method as claimed in claim 9, this method also comprise when the wafer carrying bench transfer wafers, close the set protective cover of wafer carrying bench to protect the wafer on this wafer carrying bench and to prevent the step that reaction atmosphere leaks.
14. Atomic layer deposition method as claimed in claim 9, this method also comprise when wafer leaves in each secondary response chamber, utilize the set bleed line of wafer carrying bench to remove the step of the by product of reaction.
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| CNA2007101126628A CN101333648A (en) | 2007-06-26 | 2007-06-26 | Atomic layer deposition device and Atomic layer deposition method |
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| CNA2007101126628A CN101333648A (en) | 2007-06-26 | 2007-06-26 | Atomic layer deposition device and Atomic layer deposition method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534556A (en) * | 2012-02-20 | 2012-07-04 | 姜谦 | Normal-pressure multi-cavity atomic layer deposition equipment |
| CN106086819A (en) * | 2016-08-08 | 2016-11-09 | 王禄荣 | Powder coatings device and method |
| CN106471153A (en) * | 2014-07-17 | 2017-03-01 | 应用材料公司 | The method and apparatus criticizing deposition reactor deposit cobalt layers using rotating disc type |
| CN106887398A (en) * | 2015-12-15 | 2017-06-23 | 台湾积体电路制造股份有限公司 | Mechanism, system and method for manufacturing semiconductor |
| CN108385073A (en) * | 2018-04-24 | 2018-08-10 | 信利（惠州）智能显示有限公司 | The production method of ito thin film |
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2007
- 2007-06-26 CN CNA2007101126628A patent/CN101333648A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534556A (en) * | 2012-02-20 | 2012-07-04 | 姜谦 | Normal-pressure multi-cavity atomic layer deposition equipment |
| CN106471153A (en) * | 2014-07-17 | 2017-03-01 | 应用材料公司 | The method and apparatus criticizing deposition reactor deposit cobalt layers using rotating disc type |
| CN106471153B (en) * | 2014-07-17 | 2019-11-08 | 应用材料公司 | Use the method and apparatus of rotating disc type batch deposition reactor deposit cobalt layers |
| CN106887398A (en) * | 2015-12-15 | 2017-06-23 | 台湾积体电路制造股份有限公司 | Mechanism, system and method for manufacturing semiconductor |
| US10494716B2 (en) | 2015-12-15 | 2019-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for spatial atomic layer deposition |
| CN106887398B (en) * | 2015-12-15 | 2020-11-03 | 台湾积体电路制造股份有限公司 | Mechanism, system and method for manufacturing semiconductor |
| US11008654B2 (en) | 2015-12-15 | 2021-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for spatial atomic layer deposition |
| CN106086819A (en) * | 2016-08-08 | 2016-11-09 | 王禄荣 | Powder coatings device and method |
| CN108385073A (en) * | 2018-04-24 | 2018-08-10 | 信利（惠州）智能显示有限公司 | The production method of ito thin film |
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