CN109868460A - A kind of film growth system and growing method - Google Patents
A kind of film growth system and growing method Download PDFInfo
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Abstract
The present invention relates to a kind of film growth system and growing methods, belong to material preparation neck；Including sample room, big chamber, multiple small chambers, central axis, the multiple small chamber is located in the big chamber, the central axis is located at the big chamber axis center, the sample room is connected by cross bar with the central axis, for shifting the sample in the sample room, the transfer of the sample, which is included between the multiple small chamber, to be shifted, and/or, it is shifted between the small chamber and the big chamber；The multiple small chamber includes the first small chamber and the second small chamber and annealing chamber, and first small chamber and second small chamber bottom are equipped with retractable through-hole；System provided by the invention has atomic layer deposition and annealing function simultaneously, can prepare sample absorption precursor source temperature and reaction temperature differs biggish film, expand the application range of atomic layer deposition apparatus.
Description
Technical field
The invention belongs to field of material preparation, and in particular to a kind of film growth system and growing method.
Background technique
Currently, the main method of growing film has physical method and chemical method, physical method mainly has vacuum evaporation, magnetron sputtering
With ion plating etc., chemical method mainly has chemical vapor deposition and atomic layer deposition etc..Atomic layer deposition is by precursor source colloid
It is passed through a kind of method that cavity carries out chemical reaction deposit film in matrix surface, is mainly used in semiconductor, photoelectricity material at present
Material, integrated circuit and copper interconnection seed layer etc..Atomic layer deposition has the excellent of the controllability of good shape-retaining ability and film thickness
Point, but the film of current atom layer deposition is mainly amorphous, so that film is converted to crystalline film, it is also necessary to which one is moved back
The process of fire, often anneals and completes in different equipment with atomic layer deposition.
It is former in atomic layer deposition and annealing field, Chinese patent (201410454132.1) " atomic layer deposition apparatus "
Sublayer depositing device includes reaction chamber, upper cover plate, gas distributor, valve group, multiple input and output ports, and process gas is through anti-
The opening of room connection and upper cover plate is answered, process gas can have less reservation, the maintenance and maintenance in one side later period in pipeline；
Chinese patent (201580010609.X) " apparatus for atomic layer deposition and atomic layer deposition system " jointly props up multiple rectangular substrates
A rectangular substrate is supportted, film is formed in substrate surface by the relative rotation of gas injection, so as to reduce the installation of device
Space significantly improves speed of production；Chinese patent (201710887168.2) " annealing device and method for annealing " provides one kind
Annealing device, cavity, conveyor chamber including annealing are uncapped and delivery port, substrate are annealed in chamber, and annealing process is logical
Overprotection gas, and be constantly evacuated with vacuum pump, reduction outside air enters cavity and impacts to substrate；United States Patent (USP) (US
20070134823A1) equipment of " Atomic layer deposition equipment and method " includes one only
Vertical chamber, gas transfer pipeline, gas exhaust manifold and detection gas flow flowmeter, can accurately control film
Thickness；United States Patent (USP) (20100044932 A1 of US) " Continuous annealing equipment " equipment includes preheating
There are gas injection in area, soaking zone and rapid cooling zone in rapid cooling zone to cool down to equipment, and there is heat in each heating zone
Inductor controls temperature.
Currently, atomic layer deposition and annealing are completed in different equipment respectively usually, existed in membrane-film preparation process
The growth of atomic layer deposition apparatus crystalline film is insufficient and the film later period is in being transferred to annealing device, is easy to cause sample
Pollution, meanwhile, existing atomic layer deposition apparatus, it is impossible to be used in sample adsorb precursor source temperature and reaction temperature difference compared with
Big film growth, therefore, this field needs a kind of film growth system for integrating atomic layer deposition and annealing function, and
And source temperature and the biggish film growth of its reaction temperature difference of sample absorption presoma can be used for.
Summary of the invention
In view of the above technical problems, the purpose of the present invention is to provide a kind of film growth system and growing methods, this is
System integrate atomic layer deposition and annealing function, solve by atomic layer deposition and anneal respectively in different equipment it is complete
At, existing crystalline film grows the technical issues of insufficient, sample pollutes, meanwhile, solve existing atomic layer deposition apparatus,
The source temperature and its reaction temperature that cannot be used for sample absorption presoma differ biggish film growth.
The present invention provides a kind of film growth system, including sample room, big chamber, multiple small chambers, central axis, described more
A small chamber is located in the big chamber, and the central axis is located at the big chamber axis center, the sample room by cross bar with
The central axis is connected, and for shifting the sample in the sample room, the transfer of the sample is included in the multiple small chamber
Between shift, and/or, shifted between the small chamber and the big chamber；The multiple small chamber includes the first small chamber
With the second small chamber and annealing chamber, first small chamber and second small chamber bottom are equipped with retractable through-hole, for leading to
Enter presoma.
Further, the sample room is along the radius of turn of central axis and being equidistant for the small chamber to central axis.
Further, a kind of film growth system further includes vacuum pump, the vacuum pump and the big chamber and described is moved back
Fiery room connection, for being vacuumized to the big chamber and the annealing chamber.
Further, the material of the big chamber and the small chamber includes stainless steel or aluminium alloy.
The present invention also provides a kind of film growth methods, include the following steps:
S1, starting vacuum pump, make the big chamber and the annealing chamber be in vacuum state, and heat small chamber, make each
Small chamber is respectively at preset temperature state；
S2, sample room is placed in the first small chamber, sample is put into the sample room, and into first small chamber
Full of the first presoma, the sample is made to carry out saturation absorption in first presoma, obtains the first sample；
S3, the sample room equipped with first sample is transferred to big chamber from first small chamber by central axis
It is interior, and be passed through inert gas into the big chamber and purged, in the purge, the inert gas is discharged, obtains
Second sample；
S4, it is small to be transferred to second from the big chamber by the central axis for the sample room equipped with second sample
In chamber, it is full of the second presoma in the second small chamber of Xiang Suoshu, makes second presoma, and is adsorbed on the sample surfaces
The first presoma, chemically reacted, obtain the first film；
S5, the sample room equipped with the first film is transferred to institute from second small chamber by the central axis
It states in big chamber, and is passed through inert gas into the big chamber and is purged, in the purge, the indifferent gas is discharged
Body obtains the second film；
S6, the sample room equipped with second film is transferred to annealing chamber from the big chamber by the central axis
It is interior, high temperature anneal operation is carried out, crystalline film is obtained.
Further, in S2, the dissolution of the sample or melt temperature are greater than the growth temperature of film.
Further, in S3 and S5, the inert gas includes at least one of argon gas, helium, nitrogen；The inertia
Gas is discharged by vacuum pump.
Further, in S4, the first film includes nitride, oxide, metal simple-substance, sulfide, carbide, fluorine
At least one of compound, silicide, three-five compound, four or six compounds of group.
Further, by circulate operation step S1 to step S5, the crystalline film of target thickness is obtained.
In the present invention, the first film and the second film are noncrystalline membrane.
Compared with the prior art, the invention has the following advantages that
1, system provided by the invention has atomic layer deposition and annealing function simultaneously.
2, using system provided by the invention, sample will not be polluted, and crystalline film obtained growth is sufficient.
3, system and method provided by the invention can be used for the source temperature and its reaction temperature phase of sample absorption presoma
The biggish film growth of difference, expands the application range of atomic layer deposition apparatus, so that originally uncomfortable share atomic layer deposition
Atomic layer deposition can also be used in film.
Detailed description of the invention
Fig. 1 is the perspective view of film growth system；
Fig. 2 is the top view of film growth system；
Wherein: 1, sample room, 2, big chamber, 3, small chamber, the 31, first small chamber, 32, annealing chamber, the 33, second small chamber
Room, 4, central axis.
Specific embodiment
Below in conjunction with specific embodiment and embodiment, it is specifically described the present invention, advantages of the present invention and various effects
It thus will clearly present.It will be understood by those skilled in the art that these specific embodiments and embodiment are for illustrating
The present invention is not intended to limit the present invention.
Throughout the specification, unless otherwise specified, terms used herein are interpreted as usual in this field
Used meaning.Therefore, unless otherwise defined, all technical and scientific terms used herein has leads with belonging to the present invention
The identical meaning of the general understanding of field technique personnel.Contradiction if it exists, this specification are preferential.
Unless otherwise specified, various raw material, reagent, the instrument and equipment etc. used in the present invention, can pass through
Market is commercially available or can be prepared by existing method.
The present invention provides a kind of film growth system, including sample room, big chamber, multiple small chambers, central axis, described more
A small chamber is located in the big chamber, and the central axis is located at the big chamber axis center, the sample room by cross bar with
The central axis is connected, and for shifting the sample in the sample room, the transfer of the sample is included in the multiple small chamber
Between shift, and/or, shifted between the small chamber and the big chamber；The multiple small chamber includes the first small chamber
With the second small chamber and annealing chamber, first small chamber and second small chamber bottom are equipped with retractable through-hole, for leading to
Enter presoma.
Wherein, a kind of film growth system further includes vacuum pump, the vacuum pump and the big chamber and the annealing chamber
Connection, for being vacuumized to the big chamber and the annealing chamber.
Wherein, the material of the big chamber and the small chamber includes stainless steel or aluminium alloy.
The present invention also provides a kind of film growth methods, include the following steps:
S1, starting vacuum pump, make the big chamber and the annealing chamber be in vacuum state, and heat small chamber, make each
Small chamber is respectively at preset temperature state；
S2, sample room is placed in the first small chamber, sample is put into the sample room, and into first small chamber
Full of the first presoma, the sample is made to carry out saturation absorption in first presoma, obtains the first sample；
S3, the sample room equipped with first sample is transferred to big chamber from first small chamber by central axis
It is interior, and be passed through inert gas into the big chamber and purged, in the purge, the inert gas is discharged, obtains
Second sample；
S4, it is small to be transferred to second from the big chamber by the central axis for the sample room equipped with second sample
In chamber, it is full of the second presoma in the second small chamber of Xiang Suoshu, makes second presoma, and is adsorbed on the sample surfaces
The first presoma, chemically reacted, obtain the first film；
S5, the sample room equipped with the first film is transferred to institute from second small chamber by the central axis
It states in big chamber, and is passed through inert gas into the big chamber and is purged, in the purge, the indifferent gas is discharged
Body obtains the second film；
S6, the sample room equipped with second film is transferred to annealing chamber from the big chamber by the central axis
It is interior, high temperature anneal operation is carried out, crystalline film is obtained.
In S2, the dissolution of the sample or melt temperature are greater than the growth temperature of film.
In S3 and S5, the inert gas includes at least one of argon gas, helium, nitrogen；The inert gas passes through
Vacuum pump discharge.
In S4, the first film includes nitride, oxide, metal simple-substance, sulfide, carbide, fluoride, silication
At least one of object, three-five compound, four or six compounds of group.
By circulate operation step S1 to step S5, the crystalline film of target thickness is obtained.
Embodiment 1
A kind of film growth system, including sample room, big chamber, multiple small chambers, central axis, the multiple small chamber position
In in the big chamber, the central axis is located at the big chamber axis center, and the sample room passes through cross bar and the central axis
Connection, for shifting the sample in the sample room, the transfer of the sample, which is included between the multiple small chamber, to be shifted,
And/or it is shifted between the small chamber and the big chamber；The multiple small chamber includes the first small chamber and the second small chamber
Room and annealing chamber, first small chamber and second small chamber bottom are equipped with retractable through-hole, for being passed through presoma.
Specifically, sample room is arranged along central axis in order to shift the sample in sample room between multiple small chambers
Radius of turn and small chamber to central axis be equidistant, sample room can be made to rotate to above small chamber, thus by sample room
In the sample in each stage handled in different small chambers.
Embodiment 2
S1, starting vacuum pump, make the big chamber and the annealing chamber be in vacuum state, heat the small chamber, make
First small chamber temperature is 100 DEG C, and the second small chamber temperature is 300 DEG C, and annealing room temperature is 800 DEG C；
S2, sample room is placed in the first small chamber, silicon wafer is put into the sample room, and into first small chamber
Full of presoma trimethyl aluminium, silicon wafer is made to carry out saturation absorption in presoma trimethyl aluminium, obtains the first sample；
S3, the sample room equipped with first sample is transferred to big chamber from first small chamber by central axis
Interior, and be passed through nitrogen into the big chamber and purged, in the purge, the nitrogen is discharged in vacuum pump, obtains the
Two samples；
S4, it is small to be transferred to second from the big chamber by the central axis for the sample room equipped with second sample
In chamber, it is full of presoma ammonia in the second small chamber of Xiang Suoshu, makes ammonia and the trimethyl aluminium for being adsorbed on the silicon face, into
Row chemical reaction, obtains the first film；
S5, the sample room equipped with the first film is transferred to institute from second small chamber by the central axis
It states in big chamber, and is passed through nitrogen into the big chamber and is purged, in the purge, the nitrogen is discharged, obtain
Second film；
S6, the sample room equipped with second film is transferred to annealing chamber from the big chamber by the central axis
It is interior, high temperature anneal operation is carried out, crystalline state aluminium nitride film is obtained.
By circulate operation step S1 to step S5 300 times, the aluminium nitride film of target thickness is obtained.
Embodiment 3
S1, starting vacuum pump, make the big chamber and the annealing chamber be in vacuum state, heat the small chamber, make
First small chamber temperature is 80 DEG C, and the second small chamber temperature is 130 DEG C, and annealing room temperature is 500 DEG C；
S2, sample room is placed in the first small chamber, quartz glass is put into the sample room, and to the described first small chamber
It is full of presoma hexafluoroacetylacetone copper in room, so that quartz glass is carried out saturation absorption in presoma hexafluoroacetylacetone copper, obtains
Obtain the first sample；
S3, the sample room equipped with first sample is transferred to big chamber from first small chamber by central axis
Interior, and be passed through argon gas into the big chamber and purged, in the purge, the argon gas is discharged in vacuum pump, obtains the
Two samples；
S4, it is small to be transferred to second from the big chamber by the central axis for the sample room equipped with second sample
In chamber, it is full of presoma diethyl zinc in the second small chamber of Xiang Suoshu, makes diethyl zinc and is adsorbed on the quartz glass table
The hexafluoroacetylacetone copper in face, is chemically reacted, and the first film is obtained；
S5, the sample room equipped with the first film is transferred to institute from second small chamber by the central axis
It states in big chamber, and is passed through argon gas into the big chamber and is purged, in the purge, the argon gas is discharged, obtain
Second film；
S6, the sample room equipped with second film is transferred to annealing chamber from the big chamber by the central axis
It is interior, high temperature anneal operation is carried out, crystalline state simple substance Copper thin film is obtained.
By circulate operation step S1 to step S5 300 times, the simple substance Copper thin film of target thickness is obtained.
Embodiment 4
S1, starting vacuum pump, make the big chamber and the annealing chamber be in vacuum state, heat the small chamber, make
First small chamber temperature is 100 DEG C, and the second small chamber temperature is 300 DEG C, and annealing room temperature is 800 DEG C；
S2, sample room is placed in the first small chamber, silicon wafer is put into the sample room, and into first small chamber
Full of presoma four-dimethylamino titanium, silicon wafer is made to carry out saturation absorption in presoma four-dimethylamino titanium, obtains the first sample
Product；
S3, the sample room equipped with first sample is transferred to big chamber from first small chamber by central axis
Interior, and be passed through helium into the big chamber and purged, in the purge, the helium is discharged in vacuum pump, obtains the
Two samples；
S4, it is small to be transferred to second from the big chamber by the central axis for the sample room equipped with second sample
In chamber, it is full of presoma water in the second small chamber of Xiang Suoshu, makes water and the four-dimethylamino titaniums for being adsorbed on the silicon face,
It is chemically reacted, obtains the first film；
S5, the sample room equipped with the first film is transferred to institute from second small chamber by the central axis
It states in big chamber, and is passed through helium into the big chamber and is purged, in the purge, the helium is discharged, obtain
Second film；
S6, the sample room equipped with second film is transferred to annealing chamber from the big chamber by the central axis
It is interior, high temperature anneal operation is carried out, crystalline silica titanium film is obtained.
By circulate operation step S1 to step S5 100 times, the titanium deoxid film of target thickness is obtained.
Finally, it is to be noted that, the terms "include", "comprise" or its any other variant be intended to it is non-exclusive
Property include so that include a series of elements process, method, article or equipment not only include those elements, but also
Further include other elements that are not explicitly listed, or further include for this process, method, article or equipment it is intrinsic
Element.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (9)
1. a kind of film growth system, including sample room, big chamber, multiple small chambers, central axis, the multiple small chamber are located at
In the big chamber, the central axis is located at the big chamber axis center, and the sample room is connected by cross bar and the central axis
It connects, for shifting the sample in the sample room, the transfer of the sample, which is included between the multiple small chamber, to be shifted, and/
Or, being shifted between the small chamber and the big chamber；The multiple small chamber includes the first small chamber and the second small chamber
And annealing chamber, first small chamber and second small chamber bottom are equipped with retractable through-hole, for being passed through presoma.
2. system according to claim 1, which is characterized in that the sample room along central axis radius of turn with it is described small
Chamber is equidistant to central axis.
3. system according to claim 1, which is characterized in that it further include vacuum pump, the vacuum pump and the big chamber
It is connected with the annealing chamber, for being vacuumized to the big chamber and the annealing chamber.
4. system according to claim 1, which is characterized in that the material of the big chamber and the small chamber includes stainless
Steel or aluminium alloy.
5. a kind of film growth method using system according to any one of claims 1-4, includes the following steps:
S1, starting vacuum pump, make the big chamber and the annealing chamber be in vacuum state, and heat small chamber, make each small chamber
Room is respectively at preset temperature state；
S2, sample room is placed in the first small chamber, sample is put into sample room, and be full of first into first small chamber
Presoma makes the sample carry out saturation absorption in first presoma, obtains the first sample；
S3, the sample room equipped with first sample is transferred in big chamber by central axis from first small chamber,
And be passed through inert gas into the big chamber and purged, in the purge, the inert gas is discharged, obtains second
Sample；
S4, the sample room equipped with second sample is transferred to the second small chamber from the big chamber by the central axis
It is interior, it is full of the second presoma in the second small chamber of Xiang Suoshu, makes second presoma, and is adsorbed on the of the sample surfaces
One presoma, is chemically reacted, and the first film is obtained；
S5, the sample room that the first film will be housed are transferred to described big by the central axis from second small chamber
In chamber, and inert gas being passed through into the big chamber and is purged, in the purge, the inert gas is discharged,
Obtain the second film；
S6, the sample room equipped with second film is transferred in annealing chamber by the central axis from the big chamber,
High temperature anneal operation is carried out, crystalline film is obtained.
6. film growth method according to claim 5, which is characterized in that in S2, the dissolution or thawing temperature of the sample
Degree is greater than the growth temperature of film.
7. film growth method according to claim 5, which is characterized in that in S3 and S5, the inert gas includes argon
At least one of gas, helium, nitrogen, the inert gas are discharged by vacuum pump.
8. film growth method according to claim 5, which is characterized in that in S4, the first film include nitride,
Oxide, metal simple-substance, sulfide, carbide, fluoride, silicide, three-five compound, in four or six compounds of group at least
It is a kind of.
9. film growth method according to claim 5, which is characterized in that by circulate operation step S1 to step S5,
Obtain the crystalline film of target thickness.
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| CN114836731A (en) * | 2021-02-01 | 2022-08-02 | 芯恩（青岛）集成电路有限公司 | Atomic layer deposition equipment and deposition method |
| CN115305459A (en) * | 2022-10-10 | 2022-11-08 | 江苏思尔德科技有限公司 | Atomic layer deposition equipment |
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