CN201901700U - MOCVD (metal-organic chemical vapor deposition) processing system realizing automatic substrate conveying - Google Patents
MOCVD (metal-organic chemical vapor deposition) processing system realizing automatic substrate conveying Download PDFInfo
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- CN201901700U CN201901700U CN2010205344633U CN201020534463U CN201901700U CN 201901700 U CN201901700 U CN 201901700U CN 2010205344633 U CN2010205344633 U CN 2010205344633U CN 201020534463 U CN201020534463 U CN 201020534463U CN 201901700 U CN201901700 U CN 201901700U
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Abstract
The utility model provides a MOCVD (metal-organic chemical vapor deposition) processing system realizing automatic substrate conveying, which comprises a conveying chamber, a vacuum lock and at least one reaction chamber, wherein the conveying chamber is provided with a plurality of sealing doors; a first conveying device is arranged at the inner part of the conveying chamber, and is provided with at least one conveying arm which can freely rotate along the plane where the conveying chamber is located, and is telescopic; the vacuum lock is connected with at least one of a plurality of the sealing doors; at least one slide disc carrier is arranged at the inner part of the vacuum lock; a slide disc can be placed on each slide disc carrier; at least one reaction chamber is arranged along the periphery of the conveying chamber; a plurality of substrates on slide discs located in the reaction chamber are subjected to MOCVD processing; and the conveying arm of the first conveying device is configured such that the slide discs are conveyed through the sealing doors between the vacuum lock and the reaction chamber. When the MOCVD processing system is used, the space of a cleaning chamber can be effectively saved, and the automatic conveying of the substrates in the processing system can be realized; moreover, cost for manpower and material resources is saved.
Description
Technical field
The utility model relates to vacuum flush system, relates in particular to a kind of vacuum flush system of realizing the organometallics chemical vapour deposition of automatization substrate transmission.
Background technology
MOCVD is the english abbreviation of organometallics chemical vapour deposition (Metal-organicChemical Vapor Deposition).MOCVD is a kind of novel vapor phase epitaxial growth technology that grows up on the basis of vapor phase epitaxial growth (VPE).It with hydride of the organic compound of III family, II family element and V, VI family element etc. as the crystal growth source material, in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.Usually the crystal growth in the MOCVD system all is to lead in cold wall quartz (stainless steel) reaction chamber of H2 to carry out under normal pressure or low pressure (10-100Torr), underlayer temperature is 500-1200 ℃, heat graphite base (substrate base is above graphite base) with radio-frequency induction, H2 carries metallorganics to the vitellarium by the fluid supply bubbling of Controllable Temperature.The MOCVD technology has following advantage: (1) scope of application is extensive, almost can grow all compounds and alloy semiconductor; (2) the various heterogeneous structure materials that are very suitable for growing; (3) can the grow ultra-thin epitaxial film, and can obtain very steep interfaces transition; (4) growth is easy to control; (5) material with very high purity of can growing; (6) the epitaxial film large-area uniformity is good; (7) can carry out scale operation.
The vacuum flush system that is applicable to MOCVD technology generally comprises reaction source generating unit, reaction chamber, gas control and mixing system etc.Wherein, the reaction source generating unit is divided into organometallic reaction source and gas reaction source, and reaction chamber is the place that all gas mixes and reacts, and gas control and mixing system are used to finish transmission, control and the mixing etc. of reactant gases.
Fig. 1 is the schematic layout pattern of the vacuum flush system that is applicable to the MOCVD explained hereafter of prior art.As shown in Figure 1, total system comprises reaction source generating unit 01, reactant gases control and mixing system 02 and the reaction chamber 03 that laterally is arranged side by side.In this system architecture, reaction source generating unit 01, reactant gases control and mixing system 02 and reaction chamber 03 are horizontal, and reaction source generating unit 01 and reactant gases control and mixing system 02 common service are in a reaction chamber 03.The shortcoming of this system architecture is: the setting of total system framework is not compact, and the floor space that takies in the clean room is very big, can only place a spot of several such systems in limited clean room's area.As everyone knows, the cost of safeguarding the clean room in semiconductor manufacturing industry is very expensive, and the such layout of this system will certainly take more clean room space, causes the raising of user's production cost, and production capacity is not high yet; And total system is not ductile yet, that is on the framework basis of this system, being difficult on the basis that only utilizes reaction source generating unit 01 and reactant gases control and mixing system 02 increases other reaction chamber again, thereby improves production capacity.
And system shown in Figure 1 does not have automatic substrate transmission system yet, can not realize automatic substrate loading and unloading and transmission.The substrate loading and unloading and the transmission of this system are undertaken by manual operation, when the staff operates hand stretched into glove box 05, glove box 05 is connected with reaction chamber, thereby carry out manual operation, because reactant gases and by product in this technological process have toxicity, thereby might when breaking down, improper use or system threaten that the user's is healthy.
The utility model content
At the problems referred to above in the background technology, the purpose of this utility model is to provide a kind of metal-organic chemical vapor deposition equipment treatment system that realizes the transmission of automatization substrate, it can realize carrying the automatization transmission (comprise loading and unloading) of slide glass dish in treatment system of multi-disc substrate, need not manually to pass sheet, improve the efficient and the tolerance range of substrate transmission, and can improve the homogeneity and the stability of metal-organic chemical vapor deposition equipment.
The utility model provides a kind of metal-organic chemical vapor deposition equipment treatment system that realizes the transmission of automatization substrate, comprise: have the several sealed door and keep the transfer chamber of vacuum environment, its inside is provided with first transmitting device, and described first transmitting device is provided with at least one transferring arm that can rotate freely and stretch along the plane at described transfer chamber place; With at least one vacuum lock that is connected in the described several sealed door, described vacuum lock inside is provided with at least one slide glass disc holder, can be placed with a slide glass dish on each described slide glass disc holder, can hold the multi-disc substrate on the described slide glass dish, described vacuum lock is used to connect described transfer chamber and ambient atmosphere environment, between extraneous atmospheric environment and described transfer chamber described slide glass dish is transmitted under the prerequisite of the vacuum in not losing described transfer chamber; At least one reaction chamber along the setting of described transfer chamber periphery, one in each reaction chamber and the described several sealed door is connected, place at least one described slide glass dish in described each reaction chamber, and the multi-disc substrate on it is carried out metal-organic chemical vapor deposition equipment handle; And the transferring arm of described first transmitting device is provided in, and the described hermatic door of process transmits described slide glass dish between described vacuum lock and the described a plurality of reaction chamber.
Further, described treatment system also comprises the film preloaded subsystem that is connected with described vacuum lock.
Further, described film preloaded subsystem comprises: the substrate box, and its inside accommodates the multi-disc substrate; And load chamber, the one side is connected with described substrate box, opposite side is connected with described vacuum lock, indoor second transmitting device, slide glass disc holder, slide glass dish and the 3rd transmitting device of being provided with of described load, described slide glass dish is positioned on the described slide glass disc holder, described second transmitting device is arranged between described substrate box and the described slide glass disc holder, be used between the two, taking, putting substrate, described the 3rd transmitting device is arranged between described slide glass disc holder and the described vacuum lock, is used for taking, putting between the two the slide glass dish.
Alternatively, described first transmitting device comprises two transferring arms that can rotate freely and stretch along the plane at described transfer chamber place, described two transferring arms can be separately the different direction of sense of rotation separately, to finish picking and placeing of described slide glass dish.
Alternatively, two transferring arms of described first transmitting device can move up and down with the main shaft of described first transmitting device, to adjust transferring arm planar height pointed.
Further, described slide glass dish is provided with a plurality of chip holding grooves, places a slice substrate in each chip holding groove.
Further, described vacuum lock also comprises at least one lifting device and at least one slide glass dish storage case, described a plurality of slide glass disc holder is arranged in the described slide glass dish storage case, wherein: described vacuum lock lower surface is fixed in the lower end of described lifting device, the lower surface of described slide glass dish storage case is fixed in its upper end, it can vertically move up and down described slide glass dish storage case, so that slide glass dish wherein can be aimed at the hermatic door that is arranged between described vacuum lock and the described transfer chamber and can transfer to transfer chamber by described hermatic door.
Alternatively, described transfer chamber comprises a plurality of joint faces, and each joint face is provided with two Link Ports, and described Link Port is connected in following each: reaction chamber, vacuum lock, film preloaded subsystem, thermal annealing chamber, cleaning chamber, substrate thermal processing chamber, test set.
Alternatively, described transfer chamber is square substantially, and described vacuum lock is connected in described tetragonal one side, and the position on described tetragonal other limits is connected with described a plurality of reaction chamber respectively.
Further, the position on described tetragonal other limits respectively is connected with two reaction chambers respectively.
Alternatively, can hold at least two described slide glass dishes simultaneously in described each reaction chamber.
Alternatively, described treatment system also comprises at least one the substrate thermal processing chamber in the several sealed door that is connected in described transfer chamber, is used for described substrate is lowered the temperature or preheated processing.
Further, described substrate hot processing chamber is indoor further to be provided with a test set, and described test set comprises a probe, and described probe is used for directly or indirectly the described substrate that is positioned at described substrate thermal processing chamber being tested.
Alternatively, described treatment system also comprises at least one the test chamber in the several sealed door that is connected in described transfer chamber, and it is used for described substrate is tested.
Description of drawings
Fig. 1 is the schematic layout pattern of the vacuum flush system that is applicable to the MOCVD explained hereafter of prior art;
Fig. 2 is the topology layout synoptic diagram according to the vacuum flush system of a specific embodiment of the present utility model;
Fig. 3 (a) and Fig. 3 (b) are the section of structure according to the vacuum flush system of a specific embodiment of the present utility model;
Fig. 4 is the topology layout synoptic diagram according to the vacuum flush system of a specific embodiment of the present utility model, and wherein this system further comprises a film preloaded subsystem;
Fig. 5 is the structural representation according to first transmitting device of a specific embodiment of the present utility model;
Fig. 6 is the structural representation according to first transmitting device of another specific embodiment of the present utility model.
Fig. 7 is the structural representation according to the vacuum lock of the vacuum flush system of a specific embodiment of the present utility model;
Fig. 8 is the structural representation according to the slide glass dish of the vacuum flush system of a specific embodiment of the present utility model;
Fig. 9 is the structure function synoptic diagram according to the lifting device of a specific embodiment of the present utility model;
Figure 10 is according to second hermatic door of a specific embodiment of the present utility model and the structure function synoptic diagram of first transmitting device;
Wherein, same or analogous Reference numeral is represented same or analogous device (module).
Embodiment
Below in conjunction with accompanying drawing the utility model is specifically described.
The utility model provides the compact type multi-reaction chamber system of a kind of full-automatic substrate transmission (comprising substrate loading and unloading), it can carry out the transmission of full-automatic substrate in whole technological process, have advantages such as full-automation, safety, transmission be accurate, convenient.Further, it is less that described vacuum flush system takies the floor space of clean room, can handle the multi-disc substrate simultaneously, improves throughput capacity (throughput) widely and save user's production cost.
Hereinafter will be in conjunction with the accompanying drawings the layout and the framework of the utility model vacuum flush system be described.Fig. 2 shows the schematic layout pattern according to the vacuum flush system of a specific embodiment of the present utility model.Described vacuum flush system 1 is a treatment system that comprises a plurality of reaction chambers, and it typically is a MOCVD vacuum flush system.Particularly, described MOCVD vacuum flush system 1 comprises a vacuum transfer chamber 11 that roughly is positioned at its middle position, and transfer chamber 11 presents tetragonal structure substantially, and has a plurality of joint faces 20,22,24 and 26.Be provided with first transmitting device 16 that comprises one or more transfer arms in the middle position of transfer chamber 11, be used to transmit the slide glass dish (being detailed later) that is placed with the multi-disc substrate, thereby realize the transmission of the full-automation of substrate.Can dispose a plurality of reaction chambers according to actual needs at a plurality of joint faces 22,24 of transfer chamber 11 and 26 position.As Fig. 2 example, the vacuum flush system 1 shown in the figure disposes two reaction chambers 1301 and 1302,1201 and 1202 respectively at joint face 22 and 26 places.Be provided with hermatic door 152,153,154 and 155 between described reaction chamber and the transfer chamber 11.Each reaction chamber inside all is placed with one or more slide glass dishes (the slide glass dish that only exemplarily draws in the diagram is respectively B, C, D, E), can place the pending substrate of multi-disc on described each slide glass dish.Position at the joint face 20 of transfer chamber 11 is provided with one or more vacuum locks (load lock) 14, is provided with hermatic door 151 between described vacuum lock 14 and the joint face 20.Described vacuum lock 14 is used to connect described transfer chamber 11 and ambient atmosphere environment, between extraneous atmospheric environment and described transfer chamber 11 described slide glass dish is transmitted under the prerequisite of the vacuum in not losing described transfer chamber 11.Vacuum lock 14 inside are provided with multiwalled slide glass disc holder (being detailed later), can place a slide glass dish on each slide glass disc holder.As shown in Figure 2, be placed with the multi-disc substrate on the slide glass dish A in the vacuum lock 14 in the diagram.First transmitting device 16 can transmit slide glass dish A, B, C, D, the E that is loaded with the multi-disc substrate between vacuum lock 14, a plurality of reaction chamber 1201,1202,1301,1302.
The substrate transmission course of the utility model vacuum flush system is described below with reference to Fig. 2.Particularly, in vacuum flush system 1 of the present utility model, the multi-disc substrate is placed on the slide glass dish (such as A, B, C, D, E) simultaneously, first transmitting device 16 in the transfer chamber 11 can come transmission back with these slide glass dishes between vacuum lock 14 and a plurality of reaction chamber 1201 and 1202,1301 and 1302, thereby realizes many once substrate transmission.And, in each reaction chamber shown in Figure 2, can hold one or more such slide glass dishes (according to actual design), when art breading, the multi-disc substrate directly is placed on these slide glass dishes and carries out art breading, after finishing etc. art breading, the slide glass dish that first transmitting device 16 directly will carry the substrate of finishing art breading takes out and is placed on the suitable slide glass disc holder of vacuum lock 14, cools off or is shifted out from vacuum lock 14.
See also Fig. 2, suppose such a case, the existing slide glass dish A that needs to be placed with the multi-disc substrate takes out and sends into first reaction chamber 1202 from vacuum lock 14, promptly illustrates the position of slide glass dish B, and its concrete working mechanism is as follows:
At first, open first hermatic door 151, the transfer arm of first transmitting device 16 in the transfer chamber 11 enters vacuum lock 14 by rotation, move mode such as flexible by described first hermatic door 151, this first transmitting device 16 is obtained slide glass dish A in modes such as lifting/clamp/press from both sides/inhale, and is driven the slide glass disc holder of leaving described vacuum lock 14 and passed through the described transfer chamber 11 of described first hermatic door, 151 arrival by this first transmitting device 16.
Then, close first hermatic door 151 and open the rotation of first hermatic door, 152, the first transmitting devices 16, flexible described slide glass dish A arrived first reaction chamber 1202 by described first hermatic door 152, i.e. the position of slide glass dish B is with pending manufacturing process.
At last, first transmitting device 16 is got back to transfer chamber 11 by first hermatic door 152, and closes first hermatic door 152.
By that analogy, can finish the loading process of other reaction chambers of slide glass dish in MOCVD vacuum flush system 1 by the variation/combination of similar step.For example, after the substrate on the slide glass dish in the MOCVD vacuum flush system 1 is finished art breading, also can will carry the slide glass dish of having finished the art breading substrate and be offloaded to vacuum lock automatically from reaction chamber according to system shown in Figure 2.
Should be appreciated that system layout shown in Figure 2 and framework only for exemplary but not determinate, as for the number of its reaction chamber and vacuum lock with and layout can carry out accommodation according to concrete requirement of engineering.For example, those skilled in the art can expect at an easy rate also and can one or more reaction chambers be set in the position of the joint face 24 of the described transfer chamber 11 of Fig. 2, but other required modules/components/parts of one or more vacuum locks or system are set.For another example, two reaction chambers 1301,1302 that are positioned at transfer chamber 11 left sides shown in Figure 2 also can merge is arranged to a reaction chamber (single chamberreactor) with single chamber, but the reaction chamber inside of this single chamber is provided with two or more processing platform (processing station) or conversion zone (reaction region), place a slide glass dish on each processing platform or the conversion zone, be placed with the multi-disc substrate on the slide glass dish, art breading when realizing to the multi-disc substrate.Alternatively, (communicated) that can be arranged to isolated mutually (isolated) or be interconnected according to the needs of technology between aforementioned a plurality of processing platform or the conversion zone.Isolated mutually as if being configured between a plurality of processing platforms or the conversion zone, then the art breading of each processing platform or conversion zone can not be subjected to the interference of other processing platforms, thereby can realize the independent control to the art breading of each processing platform; If be configured to be interconnected between a plurality of processing platforms or the conversion zone, the art breading environment of processing platform that then is interconnected or conversion zone can be controlled so as to same, thereby can guarantee art breading result same of a plurality of processing platforms.
In addition, above-mentioned MOCVD vacuum flush system can also additionally be provided with a chamber/module that is connected in transfer chamber, described chamber can be thermal annealing chamber (anneal chamber), cleaning chamber (cleaning chamber) etc., to increase the function of described vacuum flush system.
Alternatively, above-mentioned chamber/module can be set to a substrate thermal processing chamber, it is connected in transfer chamber by in the several sealed door of transfer chamber one of them, be provided with substrate in the described substrate thermal processing chamber, it is used for need lowering the temperature or preheating processing described substrate according to processing procedure.
Further, described substrate hot processing chamber is indoor to be provided with a test set, and described test set comprises a probe, and described probe is used for directly or indirectly the described substrate that is positioned at described substrate thermal processing chamber being tested.For example in the LED processing procedure, be used to test the wavelength of LED substrate.
Alternatively, above-mentioned chamber/module can also be set to a test set, and it is connected in the several sealed door of described transfer chamber at least one, and it is used for substrate is tested.For example in the LED processing procedure, be used to test the wavelength of LED substrate.
Alternatively, described transfer chamber comprises a plurality of joint faces, and each joint face is provided with at least two Link Ports, and described Link Port is connected in following each: reaction chamber, vacuum lock, film preloaded subsystem, thermal annealing chamber, cleaning chamber, substrate thermal processing chamber, test set.
In addition, can also be provided with the film preloaded subsystem further, be used for substrate automatization ground is loaded into a certain slide glass dish from the substrate box, again this slide glass dish is loaded into once on a certain slide glass disc holder in the vacuum lock 14 at the front end of vacuum lock 14.Fig. 4 shows the structural representation of this film preloaded subsystem, and described film preloaded subsystem 17 comprises interconnective substrate box 171 and load chamber 173.One or more substrate pedestals 1722 are set in the substrate box 171, place multi-disc substrate 1721 pending or that handled well in each substrate pedestal 1722.In the present embodiment, described pending substrate 1721 is the stacking-type alignment placement in substrate pedestal 1722.173 inside, load chamber are provided with slide glass disc holder 174, be placed with a slide glass dish 175 on the described slide glass disc holder 174, a plurality of chip holding grooves 1751 are arranged among the described slide glass dish 175, place a slice substrate in each chip holding groove 1751, also comprise one second transmitting device 176 and one the 3rd transmitting device 178 in the described load chamber 173, and, between described substrate box 171 and described load chamber 173, be provided with the 4th hermatic door 177, between described load chamber 173 and vacuum lock 14, be provided with the 5th hermatic door 179.Be to be understood that, aforementioned second transmitting device 176 and the 3rd transmitting device 178 can be the general in the industry or following various forms of transmitting devices that go out newly developed, for example, Japan kawasaki robot company, the mechanical manipulator that Kawasaki Heavy Industries, Limited and Denso group company produce all is applicable to second transmitting device of above mentioning 176.
How below will describe film preloaded subsystem 17 works.
At first, open the 4th hermatic door 177, the second transmitting devices 176 and stretch into substrate box 171, and pending substrate 1721 on the substrate pedestal 1722 is wherein taken out one by one and is placed on the described chip holding groove 1751 by described the 4th hermatic door 177.
Then, when all loading is gone up substrate on all the substrate pedestals 1751 on the described slide glass dish 175, close described the 4th hermatic door 177.
At last, open the 5th hermatic door 179, described the 3rd transmitting device 178 is placed to this slide glass dish 175 on the slide glass disc holder in the vacuum lock 14 by the 5th hermatic door 179.
To be film preloaded subsystem 17 be loaded into the process of vacuum lock 14 with substrate from substrate box 171 to aforesaid working process, by first transmitting device 16 the slide glass dish in the vacuum lock delivered to reaction chamber again.Be to be understood that, substrate in reaction chamber is processed to finish, also can take out and be placed on some slide glass disc holder of vacuum lock 14 by the slide glass dish that first transmitting device 16 is handled carrying in the reaction chamber well substrate, via the 3rd transmitting device 178 the slide glass dish is placed on the slide glass disc holder 174 again, at leisure the substrate of handling well is offloaded on the substrate pedestal 1722 suitable in the substrate box 171 from the slide glass dish by second transmitting device 176 again.
Need to prove; those skilled in the art should know; in concrete processing procedure, can carry out accommodation to the arrangement mode of substrate and substrate pedestal; for example; for saving the spatial purpose; substrate can be carried out vertical stacking-type and arrange (structure of the vacuum lock 14 in the similar above) in the substrate box, and the arrangement/layout type of other distortion also should be encompassed within the protection domain of the present utility model.
Fig. 5 is the structural representation according to first transmitting device of a specific embodiment of the present utility model.Described first transmitting device comprises two transferring arms that can rotate freely and stretch along the plane at described transfer chamber place, described two transferring arms can be separately the different direction of sense of rotation separately, to finish picking and placeing of described slide glass dish.And then two transferring arms of described first transmitting device can move up and down with the main shaft of described first transmitting device, to adjust transferring arm planar height pointed.As shown in Figure 5, this first transmitting device typically is a mechanical manipulator (robot), particularly, described first transmitting device 16 has two transferring arms 161,162, the transmission that it can finish the slide glass dish according to the angle and the flexible degree of above-mentioned transfer arm of rotation along the plane at described transfer chamber place, and can move up and down with the main shaft of described first transmitting device, to adjust transferring arm planar height pointed.Further, described two transfer arms 161 and 162 can point to some directions simultaneously, such as, point to same vacuum lock or same reaction chamber simultaneously, also can be separately the different direction of sense of rotation separately, such as, two transferring arms point to two different slide glass disc holder of same vacuum lock respectively, or point to the slide glass disc holder of two different vacuum locks respectively; Perhaps, a transferring arm points to a vacuum lock, is used for getting or putting in this vacuum lock the slide glass dish, and another transferring arm points to a reaction chamber, is used for getting or putting in this treatment chamber the slide glass dish; Perhaps, two transferring arms point to two different treatment chamber that are arranged on the transfer chamber limit respectively, are used for getting or put the slide glass dish respectively in two reaction chambers.Therefore, two transferring arms of first transmitting device of the present utility model can be carried out the action that picks and places of slide glass dish neatly separately, can be simultaneously in one or more vacuum locks two slide glass dishes of loading or unloading, can not have waiting time ground continuously yet and in one or more reaction chambers, finish loading, unloading or the switching motion of slide glass dish, be particularly useful for being integrated with the treatment system of a plurality of vacuum locks or reaction chamber, thereby the throughput capacity of entire treatment system (throughput) is improved greatly.
Therefore, first transmitting device 16 of the present utility model is in exchange of slide glass dish or cargo handling process, only need vertical position by the transferring arm 161,162 of adjusting first transmitting device 16, vacuum lock slide glass disc holder with and reaction chamber in the slide glass disc holder can fix at vertical position, only finish the slide glass dish exchange of carrying substrates by the motion of first transmitting device 16.
In addition, first transmitting device of the present utility model is equally applicable to the mechanical manipulator of single transfer arm.Fig. 6 is the structural representation according to first transmitting device of another specific embodiment of the present utility model, as shown in Figure 6, first transmitting device 16 ' only has a transfer arm 161 ', and it also can be along the plane at described transfer chamber place stretches with transfer arm 161 ' by self rotation and finishes the transmission of slide glass dish.Different is that this first transmitting device 16 ' can only point to a direction at one time, finishes getting/putting of a slide glass dish.
Further, according to a preferred embodiment of the present utility model, be provided with a plurality of slide glass dishes of placing a plurality of substrates in its vacuum lock.Fig. 7 shows the vacuum lock structural representation of present embodiment, and Fig. 8 shows the wherein structure of each slide glass dish.Describe below in conjunction with Fig. 7 and Fig. 8, described vacuum lock 14 comprises a plurality of slide glass disc holder 143, can be placed with a smooth slide glass dish 142 on each described slide glass disc holder 143, described slide glass disc holder 143 supports slide glass dish 142 placed thereon, a plurality of chip holding grooves 1421 are arranged at (as shown in Figure 8) among the described slide glass dish, place a slice substrates in each chip holding groove 1421.Wherein, connection between described slide glass disc holder 143 and the described slide glass dish 142 is not a fixed, be removable lining, make in the transfer chamber 11 transmitting device 16 can first hermatic door 151 takes out slide glass dishes 142 between described transfer chamber 11 and the described vacuum lock by being arranged at, and then the slide glass dish is sent into for example first reaction chamber 1201.
Further, as shown in Figure 7, described vacuum lock 14 also comprises at least one lifting device 144 and at least one slide glass dish storage case 145, wherein, the lower end of described lifting device 144 is fixedly connected on the lower surface 14b of described vacuum lock, its upper end is fixedly connected on the lower surface 145a of described slide glass dish storage case, it can vertically move up and down described slide glass dish storage case 145, is arranged at first hermatic door 151 between described vacuum lock 14 and the transfer chamber 11 and can transfers to transfer chamber 11 by described first hermatic door 151 so that described slide glass dish 142 can be aimed at.Especially, described lifting device 144 comprises first a rigid columnar structure 1441 further, it is fixedly connected to described slide glass dish storage case 145, the below of described first columnar structure 1441 is provided with second columnar structure 1442 of a hollow, its hollow structure can hold first columnar structure 1441, make described first columnar structure 1441 can by with can on spatial arrangement, the moving up and down in various degree of the described second columnar structure interlock, move up and down thereby drive described slide glass dish storage case 145.
For example, as shown in Figure 9, at starting position (a), first columnar structure 1441 of described lifting device 144 is d3 with the height of the part of second columnar structure, 1442 interlocks of hollow.According to the processing procedure needs, lifting device 144 need be transferred to position (b), the height that is first columnar structure 1441 and the part of second columnar structure, 1442 interlocks of hollow of described lifting device 144 is d4, then at the described lifting device 144 of the vertical direction position d3-d4 that moved up.Because slide glass dish storage case 145 is rigid fixedlying connected with first columnar structure 1441 of lifting device 144, therefore, described slide glass dish storage case 145 has also correspondingly moved d3-d4 on spatial arrangement.By that analogy, according to requirement of engineering, the degree that can adjust interlock between described first columnar structure 1441 and second columnar structure 1442 arbitrarily to raise up and down or reduce described slide glass dish storage case 145 in spatial arrangement, make slide glass dish 142 wherein can obtain to aim at the better position of first hermatic door, and first transmitting device 16 that is arranged in transfer chamber 11 can obtain described slide glass dish 142 like a cork.
Need to prove, the concrete structure of above-mentioned lifting device and function are applicable to above preferred embodiment of the present utility model, only be exemplary, it will be appreciated by those skilled in the art that all device/modules/components/systems that the slide glass dish is moved up and down all should be applicable to the utility model on spatial arrangement.
Especially, described vacuum lock 14 upper surfaces to the upper surface 151a of first hermatic door 151 vertical apart from d1 greater than/equal the vertical length d 2 of described slide glass dish storage case.
In addition, change example according to one of the foregoing description, also can adjust the height that the slide glass dish was adorned/unloaded to its transferring arm, and to need not be the special lifting device of slide glass dish storage case configuration by the height of adjusting the transmitting device main shaft in the transfer chamber.As shown in figure 10, first transmitting device 16 ' can move down along its main shaft 16b ' in the vertical direction, transfers to described transfer chamber with a plurality of slide glass dishes 142 ' that will be vertically placed on different heights in described vacuum lock 14 ' by the hermatic door 151 ' that is arranged between described vacuum lock 14 ' and the transfer chamber.Wherein, lifting device 144 ' can be set at fixing rigid simple columnar structure.
Particularly, described first transmitting device 16 ' comprises main shaft 16b ' and transfer arm 16a ' further, at least one can move up and down at vertical direction, for example the lifting device that above is applicable to slide glass dish storage case can be arranged at described main shaft 16b ' below (not shown).
Especially, the height d5 of described hermatic door 151 ' is more than or equal to the height d2 of described slide glass dish storage case 145 ', thus, the transfer arm 16a ' of first transmitting device can arrive the slide glass dish 142 ' in any set slide glass dish storage case 145 ' on spatial arrangement.
Need to prove that the specific structural details of various modules/components/device of above mentioning, material, function detail all have sophisticated support in the prior art, for simplicity's sake, do not repeat them here.
The utility model provides a kind of multi-reaction chamber MOCVD treatment system of compact type simultaneously, it not only can carry out full-automatic substrate transmission in whole technological process, and whole vacuum flush system to take the floor space of clean room less, can handle the multi-disc substrate simultaneously, improve throughput capacity (throughput) widely and save user's production cost.Below will describe in detail.
Usually, the assembly of MOCVD vacuum flush system can roughly be divided into: reaction chamber, gas control and mixing system, reaction source and flare system.
Wherein, reaction chamber (Reactor Chamber) mainly is the place that all gas mixes and reacts, and cavity is normally made by stainless steel or quartzy institute and formed, and the inwall of cavity has the liner that is made of quartz or pyroceramic usually.In cavity, have a slide glass dish and be used for bearing substrate, this slide glass dish must absorb the energy that provides from well heater and needed temperature when reaching film growth efficiently, but also can not react, so be to form mostly with the graphite manufacturing with reactant gases.The setting of well heater, according to the difference of design, what have is arranged within the reaction chamber body, also has to be arranged on outside the cavity, and the kind of well heater then has with type of heating such as infrared lamp, thermal resistance wire and microwaves.In reaction chamber body inside many passages that can allow water coolant circulate are arranged usually, can allow water coolant avoid cavity over-heated condition takes place in this when film growth.
Gas control and mixing system (Gas handling ﹠amp; Mixing system) working mechanism is as follows: current-carrying gas flows into system from the supplied upstream end of system, controls the flow that gas in each pipeline flows into reaction chamber via the adjusting of flow director (MFC, Mass flow controller).Before these gases flow into reaction chambers, must be first decide this inflow reaction chamber (Run) of gas in this pipeline also or directly to drain into the exhaust pipe (Vent) of reaction chamber tail end through one group of gas switched router (Run/Vent Switch).The gas that flows into reaction cavity then can participate in reaction and the growth film, and the gas that directly enters the exhaust pipe of reaction chamber tail end then is not participate in the film growth reaction.
The reaction source supply and the transmission system that comprise foamite system and reacting gas source are used to provide reaction source, and wherein, reaction source can be divided into two kinds, and first kind is the organometallic reaction source, and second kind is hydride (Hydride) gas reaction source.Then reaction source supply and transmission system comprise and convert liquid organometallic reaction source to the foamite system of steam-like and the current-carrying gas transmission system that the organometallic reaction source of described steam-like is brought to described reaction chamber.The organometallic reaction source is stored in the stainless cylinder of steel of sealing (cylinder bubbler) with the outer pipeline of two connection, when this metal reaction source of use, then be with the outer pipeline of these two connection each with the pipeline of MOCVD treatment system with VCR joint tight joint, current-carrying gas can be from wherein end inflow, and the saturated vapo(u)r of reaction source is taken out of when an other end flows out, and then can flow to reaction chamber.In the process of MOCVD, the most important thing is accurate pilot-gas, steam and liquid.Be easier in the control of gas, only need to get final product via the control of gas mass flow amount controller; But aspect liquid, because liquid need convert steam earlier to, but the flow control of steam is very difficult, is to adopt foaming system (Bubbler systems) at present mostly.Hydride gas then is to be stored in the airtight steel cylinder, controls the gas flow that flows into reaction cavity via pressure-regulator (Regulator) and flow director.No matter be organometallic reaction source or hydride gas, all be to belong to have toxic material, natural oxidation can take place in organo-metallic after ingress of air, so toxicity is lower, hydride gas then is the quite high material of toxicity, so don't fail to pay special attention to safety in use.Organometallic reaction source commonly used has: TMGa (Trimethylgallium), TMAl (Trimethylaluminum), TMIn (Trimethylindium), Cp2Mg (Bis (cyclopentadienyl) magnesium), DIPTe (Diisopropyltelluride) or the like.Hydride gas commonly used then has hydrogen arsenide (AsH3), phosphuret-(t)ed hydrogen (PH3), nitrogenize hydrogen (NH3) and silicon ethane (Si2H6) or the like.
See also Fig. 3 (a) and Fig. 3 (b), it shows the section of structure according to the vacuum flush system of a specific embodiment of the present utility model.System shown in Fig. 3 (a) and Fig. 3 (b) from left to right, comprises the first reaction chamber module 1201, transfer chamber module 11 and the second reaction chamber module 1301 respectively.
Different with the treatment system of prior art, for a kind of multi-reaction chamber system of compact type is provided, reaction chamber module 1201,1301 of the present utility model is configured to vertical stacking-type layout.In other words, the utility model will be arranged at the below of reaction chamber with supplementary units such as foamite system, gas control and the mixing system of the supporting setting of reaction chamber, reacting gas source, off-gas pumps, and correspondingly raise the height of reaction chamber, make supplementary units such as reaction chamber, foamite system, gas control and mixing system, reacting gas source, off-gas pump present the compact layout of vertical stacking-type on the whole.Compare with the reaction source generating unit that laterally is arranged side by side, gas control and the mixing system of prior art and the system of reaction chamber, vacuum flush system of the present utility model is compacter, can dispose more reaction chamber, and it is little to take the floor space of clean room.
Particularly, in the embodiment shown in Fig. 3 (a) and Fig. 3 (b), control of first gas and mixing system 124 are arranged at the below of first reaction chamber 1201, the first hydride gas reaction source supply and transmission system 126 are arranged at the below of described gas control and mixing system 124, are provided with first foamite system 123 on the left side of described first hydride gas reaction source supply and transmission system 126.In addition, because this vertical stacking-type topological design makes the height of entire reaction chamber increase, the slip-stick artist safeguards reaction chamber and debugs for convenience, and the utility model has designed a plurality of steps and first staircase 127 at the bottom left section of first reaction chamber 1201.The height of described first staircase and the exponent number of step can be provided with according to requirement of engineering.For example, can be with the shaped design of first step for just holding first foamite system 123, particularly, first foamite system 123 can be configured to just in time to be contained in the step that plane 127a and surperficial 127b form.Selectively, a first-hand casing 128 can also be set on the top of described first reaction chamber 1301, in needs, the slip-stick artist can stretch into hand 128 pairs first reaction chambers of described first-hand casing 1201 and carry out manual operation.
Should be appreciated that the reaction chamber module 1201 shown in Fig. 3 (a) and Fig. 3 (b) only represented control of first foamite system 123 of first reaction chamber 1201 shown in Fig. 2 and setting supporting with it, first gas and elements such as mixing system 124, the first hydride gas reaction source supply and transmission system 126; With the elements such as foamite system, gas control and mixing system, the supply of hydride gas reaction source and transmission system that setting supporting with it also can be set in second reaction chamber 1202 of first reaction chamber, 1201 adjacent settings similarly, and they also are rendered as the compact layout of vertical stacking-type.
In addition, in order to make succinct more, the compact and saving system cost of system design, can make aforementioned first reaction chamber 1201 and second reaction chamber 1202 share elements such as a cover foamite system, gas control and mixing system, reflection gas source, and make elements such as these foamite systems, gas control and mixing system, reacting gas source organically reasonably be disposed at the below of first reaction chamber 1201 and second reaction chamber 1202.Certainly, also can be according to requirement of engineering, the part in the element such as first reaction chamber 1201 and second reaction chamber 1202 can only shared foamite systems, gas control and mixing system, reacting gas source.
In like manner, be positioned at first reaction chamber 1301 on transfer chamber module 11 right sides and corresponding second foamite system 133, the control of second gas and mixing system 134, the second hydride gas reaction source supply and of the reaction chamber module 12 the same settings of devices such as transmission system 136, second staircase 137, second-hand's casing 137 thereof with the left side.Succinct in order to compose a piece of writing, no longer superfluous herein chatting.
Should be appreciated that in the aforementioned embodiment above-mentioned first reaction chamber and second reaction chamber are essentially mirror surface structure, its configured parts and position thereof all are one to one, but this can not be in order to limit the utility model.Layout/the position of all parts in reaction chamber can be adjusted according to arts demand, if its layout/position on spatial arrangement, have stacking-type arrange/overlapping, then all do not exceed spiritual scope of the present utility model.
Alternatively, described reaction chamber subsystem comprises flare system.
Alternatively, described reaction chamber subsystem comprises power system.
Alternatively, also the control of described gas and mixing system can be disposed at the below of reaction source supply and transmission system.
Alternatively, also described gas control and mixing system and reaction source supply and transmission system can be positioned in horizontal direction abreast the below of described reaction chamber.
Alternatively, described reaction chamber also comprises off-gas pump, and described off-gas pump also can be arranged at the below of described reaction chamber.
More than each embodiment of the present utility model is had been described in detail.Need to prove that the foregoing description only is exemplary, but not to restriction of the present utility model.Any technical scheme that does not deviate from spirit of the present utility model all should fall within the protection domain of the present utility model.In addition, any Reference numeral in the claim should be considered as limit related claim; " comprise " that a speech do not get rid of device unlisted in other claim or the specification sheets or step; Word such as " first ", " second " only is used for representing title, and does not represent any specific order.
Claims (12)
1. metal-organic chemical vapor deposition equipment treatment system that realizes automatization substrate transmission comprises:
Have the several sealed door and keep the transfer chamber of vacuum environment, its inside is provided with first transmitting device, and described first transmitting device is provided with at least one transferring arm that can rotate freely and stretch along the plane at described transfer chamber place;
With at least one vacuum lock that is connected in the described several sealed door, described vacuum lock inside is provided with at least one slide glass disc holder, can be placed with a slide glass dish on each described slide glass disc holder, can hold the multi-disc substrate on the described slide glass dish, described vacuum lock is used to connect described transfer chamber and ambient atmosphere environment, between extraneous atmospheric environment and described transfer chamber described slide glass dish is transmitted under the prerequisite of the vacuum in not losing described transfer chamber;
At least one reaction chamber along the setting of described transfer chamber periphery, one in each reaction chamber and the described several sealed door is connected, place at least one described slide glass dish in described each reaction chamber, and the multi-disc substrate on it is carried out metal-organic chemical vapor deposition equipment handle; And
The transferring arm of described first transmitting device is provided between described vacuum lock and the described a plurality of reaction chamber and transmits described slide glass dish through described hermatic door.
2. treatment system according to claim 1 is characterized in that, described treatment system also comprises the film preloaded subsystem that is connected with described vacuum lock.
3. treatment system according to claim 2 is characterized in that, described film preloaded subsystem comprises:
The substrate box, its inside accommodates the multi-disc substrate; And
The load chamber, the one side is connected with described substrate box, opposite side is connected with described vacuum lock, indoor second transmitting device, slide glass disc holder, slide glass dish and the 3rd transmitting device of being provided with of described load, described slide glass dish is positioned on the described slide glass disc holder, described second transmitting device is arranged between described substrate box and the described slide glass disc holder, be used between the two, taking, putting substrate, described the 3rd transmitting device is arranged between described slide glass disc holder and the described vacuum lock, is used for taking, putting between the two the slide glass dish.
4. treatment system according to claim 1, it is characterized in that, described first transmitting device comprises two transferring arms that can rotate freely and stretch along the plane at described transfer chamber place, described two transferring arms can be separately the different direction of sense of rotation separately, to finish picking and placeing of described slide glass dish.
5. treatment system according to claim 4 is characterized in that, two transferring arms of described first transmitting device can move up and down with the main shaft of described first transmitting device, to adjust transferring arm planar height pointed.
6. treatment system according to claim 1 is characterized in that, described slide glass dish is provided with a plurality of chip holding grooves, places a slice substrate in each chip holding groove.
7. treatment system according to claim 1 is characterized in that, described vacuum lock also comprises at least one lifting device and at least one slide glass dish storage case, and described a plurality of slide glass disc holder are arranged in the described slide glass dish storage case, wherein:
Described vacuum lock lower surface is fixed in the lower end of described lifting device, the lower surface of described slide glass dish storage case is fixed in its upper end, it can vertically move up and down described slide glass dish storage case, so that slide glass dish wherein can be aimed at the hermatic door that is arranged between described vacuum lock and the described transfer chamber and can transfer to transfer chamber by described hermatic door.
8. treatment system according to claim 1, it is characterized in that, described transfer chamber comprises a plurality of joint faces, each joint face is provided with two Link Ports, and described Link Port is connected in following each: reaction chamber, vacuum lock, the film preloaded subsystem, the thermal annealing chamber, cleaning chamber, substrate thermal processing chamber.
9. treatment system according to claim 1 is characterized in that described transfer chamber is square substantially, and described vacuum lock is connected in described tetragonal one side, and the position on described tetragonal other limits is connected with described a plurality of reaction chamber respectively.
10. treatment system according to claim 9 is characterized in that, the position on described tetragonal other limits respectively is connected with two reaction chambers respectively.
11. treatment system according to claim 1 is characterized in that, can hold at least two described slide glass dishes simultaneously in described each reaction chamber.
12. treatment system according to claim 1 is characterized in that, described treatment system also comprises at least one the substrate thermal processing chamber in the several sealed door that is connected in described transfer chamber, is used for described substrate is lowered the temperature or preheated processing.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205344633U CN201901700U (en) | 2010-09-17 | 2010-09-17 | MOCVD (metal-organic chemical vapor deposition) processing system realizing automatic substrate conveying |
| TW100200325U TWM413210U (en) | 2010-09-17 | 2011-01-07 | MOCVD processing system to realize automatic substrate transmission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205344633U CN201901700U (en) | 2010-09-17 | 2010-09-17 | MOCVD (metal-organic chemical vapor deposition) processing system realizing automatic substrate conveying |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201901700U true CN201901700U (en) | 2011-07-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205344633U Expired - Lifetime CN201901700U (en) | 2010-09-17 | 2010-09-17 | MOCVD (metal-organic chemical vapor deposition) processing system realizing automatic substrate conveying |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN201901700U (en) |
| TW (1) | TWM413210U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347460A (en) * | 2013-08-01 | 2015-02-11 | 中微半导体设备(上海)有限公司 | Wafer transferring chamber |
| CN109868460A (en) * | 2019-03-14 | 2019-06-11 | 嘉兴科民电子设备技术有限公司 | A kind of film growth system and growing method |
| CN114450439A (en) * | 2019-10-03 | 2022-05-06 | 洛佩诗公司 | Processing device and epitaxial reactor with storage chamber |
-
2010
- 2010-09-17 CN CN2010205344633U patent/CN201901700U/en not_active Expired - Lifetime
-
2011
- 2011-01-07 TW TW100200325U patent/TWM413210U/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347460A (en) * | 2013-08-01 | 2015-02-11 | 中微半导体设备(上海)有限公司 | Wafer transferring chamber |
| CN104347460B (en) * | 2013-08-01 | 2017-03-15 | 中微半导体设备(上海)有限公司 | Wafer transmits chamber |
| CN109868460A (en) * | 2019-03-14 | 2019-06-11 | 嘉兴科民电子设备技术有限公司 | A kind of film growth system and growing method |
| CN109868460B (en) * | 2019-03-14 | 2021-10-15 | 嘉兴科民电子设备技术有限公司 | Film growth system and growth method |
| CN114450439A (en) * | 2019-10-03 | 2022-05-06 | 洛佩诗公司 | Processing device and epitaxial reactor with storage chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM413210U (en) | 2011-10-01 |
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| GR01 | Patent grant | ||
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| CP03 | Change of name, title or address |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, South District, Jinqiao Export Processing Zone, Pudong, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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| CX01 | Expiry of patent term | ||
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Granted publication date: 20110720 |