CN209443082U - A kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus - Google Patents
A kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus Download PDFInfo
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- CN209443082U CN209443082U CN201822193218.XU CN201822193218U CN209443082U CN 209443082 U CN209443082 U CN 209443082U CN 201822193218 U CN201822193218 U CN 201822193218U CN 209443082 U CN209443082 U CN 209443082U
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- carrier
- side plate
- tonnage
- tooth socket
- flow passage
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Abstract
The utility model discloses a kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus, carrier group including several groups laid out in parallel, carrier group described in every group is made of multiple carriers, end to end with the bottom plate and side plate for organizing each carrier in carrier group, surrounds hollow column structure；It is spliced to form entirety with two wafers on each carrier in group carrier group with position, the space above and below the position wafer is respectively communicated with to form airflow channel.Due to not having excessive gas free air space, all gas (containing raw material) all necessarily flows through the airflow channel being made of wafer (silicon wafer), and then handles wafer (silicon wafer), utilizes raw material to greatest extent；The structure customer service low problem of raw material availability, raw material availability from principle can be promoted to 95% or more.
Description
Technical field
The invention belongs to field of semiconductor manufacture, and in particular to photovoltaic cell manufacturing field, by atomic layer deposition (ALD) skill
Art is applied to photovoltaic art, the equipment for producing ultra-large product.
Background technique
ALD equipment raw material availability currently used for crystal silicon solar batteries manufacture is lower (30-50%).ALD raw material is often
(or reaction) (such as TMA) is decomposed before vacuum pump or in vacuum pump and generates powder, and vacuum pump is damaged.Low raw material utilizes
Rate not only means the increase of production cost, and reduces the service life of vacuum pump.Batch enter batch go out formula ALD equipment (or when
Between type ALD equipment) gas flow design to improve raw material availability it is very crucial.
Applied to the ALD equipment of silicon solar cell manufacture, its runner is mostly rectangular duct, and the carrier of wafer (silicon wafer) is
Rectangular parallelepiped structure.Carrier is placed in runner, and carrier and runner are unable to perfect combination, and air-flow (including raw material) can be outside carrier
Space flow in tail gas, fail to be formed in the plated film on product, cause to waste.
In addition, the raw material of waste generates powder in tail gas, cause the vacuum pump maintenance period of photovoltaic ALD equipment most
The no more than 3 moon.Runner locating for this structure wafer (silicon wafer) is unevenly distributed, and air-flow environment is also just different, eventually leads to plating
Film uniformity is poor.Firstly, runner upper space is larger, and lower part is smaller for the ease of removing to put carrier, it is asymmetric up and down.Secondly,
The small space that two panels adjacent wafers (silicon wafer) are formed is stingy circulation road one by one, and it is empty that annular is formed between carrier and rectangular duct
Between be also big airflow channel, these airflow channels all directly or indirectly influence the air-flow environment (i.e. flow field) of every wafer, most
Cause air-flow unevenness and plating film uniformity poor eventually.
Summary of the invention
Goal of the invention: a kind of suitable for super large-tonnage original present invention aims in view of the deficiencies of the prior art, providing
The flow passage structure of sublayer depositing device improves the raw material availability of ALD equipment, reduces production cost.
Technical solution: the flow passage structure of the present invention suitable for super large-tonnage atomic layer deposition apparatus, including it is several
The carrier group of group laid out in parallel, carrier group described in every group are made of multiple carriers, and the carrier includes that two bottom plates and both side plate enclose
At carrier frame, with organize carrier group in each carrier bottom plate and side plate it is end to end, surround hollow column structure；
Several tooth sockets are from top to bottom evenly equipped on the both side plate opposite side of each carrier, the tooth socket one on both side plate is a pair of
Answer, and corresponding two tooth is generally aligned in the same plane, corresponding two tooth socket carries two wafers on both side plate, two wafers to
Plated film side is laterally outer, and the other side is bonded to each other；It is spliced to form with two wafers on each carrier in group carrier group with position whole
Body, the space above and below the position wafer are respectively communicated with to form airflow channel.
Further preferably technical solution is the present invention, and carrier group described in every group is made of 3 ~ 10 carriers.
Preferably, carrier group described in every group is made of 6 carriers.
Preferably, at least one rack gear is additionally provided between two bottom plate, on the tooth socket and both side plate on rack gear
Tooth socket corresponds, and any corresponding two tooth is generally aligned in the same plane；Described in tooth socket carries jointly on the rack gear and both side plate
Wafer, and limit the " loaded " position of the wafer.
Preferably, the rack gear is two, and two rack gears are located at carrier frame facet, and upper and lower ends are solid with two bottom plates respectively
Fixed connection.
Preferably, tooth socket quantity is 200 ~ 250 on the side plate of side, and the spacing between adjacent two tooth socket is 2 ~ 3 mm.
Preferably, tooth socket quantity is 200 on the side plate of side, and the spacing between adjacent two tooth socket is 2.38 mm.
Preferably, the angle for two flank profils of tooth socket being constituted on the side plate is 5 ~ 20 °.
Preferably, the angle for two flank profils of tooth socket being constituted on the side plate is 6 °.
Preferably, the bottom plate and side plate are made of aluminium alloy or U.S. aluminum alloy materials, and each carrier weight is 5 ~ 7
Kg, the thermal capacity of each carrier are 4 ~ 6 kJ/ DEG C.
The utility model has the advantages that (1) flow passage structure of the invention is made of carrier and wafer (silicon wafer), wherein wafer (silicon wafer) is
Product processed, carrier close-packed arrays form airflow channel, and every ALD equipment can be made of multiple airflow channels, wafer (silicon
Piece) it is evenly distributed in carrier, each airflow channel is uniformly divided into several small airflow channels, is circulated without excessive gas
Space, all gas (contain raw material) all necessarily flow through the airflow channel being made of wafer (silicon wafer), so to wafer (silicon wafer) into
Row processing, utilizes raw material to greatest extent；The structure customer service low problem of raw material availability, raw material availability from principle can mention
It is raised to 95% or more；And because of the raising of raw material availability, decline Dust Capacity in tail gas, effectively protect vacuum pump, improves true
The service life of sky pump；This flow passage structure can be such that the vacuum pump maintenance period that is averaged increases to 1 year in conjunction with air filter
Left and right；Every wafer (silicon wafer) is all in upper and lower two stingy circulation roads, therefore these little airflow channel shapes are identical,
Air-flow environment locating for every wafer (silicon wafer) is identical, be eventually exhibited as in piece and piece between plated film indifference (or difference infinitely becomes
It is small), and then improve plating film uniformity；
(2) carrier structure of the invention is simple, surrounds carrier frame by two bottom plates and both side plate, convenient for production, loads
It is easy；In addition tooth socket is set on both side plate in the present invention, each tooth socket carries two wafers, the side to be coated of two wafers
Lateral outer, carrier places (or slightly inclination angle < 30 °) vertically, and wafer is fit together by gravity, reduction reactant and non-
The contact in ALD coating film treatment face, and then reduce around plating, improve the transformation efficiency and service life of photovoltaic cell；
(3) rack gear is set between two bottom plates in the present invention, the tooth socket of rack gear is corresponding with the tooth socket on both side plate, not only
Wafer can be carried jointly with tooth socket on both side plate, can also limit the " loaded " position of wafer as blend stop, prevent in loading
Wafer falls off from carrier；
(4) tooth socket quantity is 200 ~ 250 on the side plate of side in the present invention, and the spacing between adjacent two tooth socket is 2 ~ 3
Mm, it is preferred that tooth socket quantity is 200 on the side plate of side, and the spacing between adjacent two tooth socket is 2.38 mm, and every tooth socket is held
It carries two wafers (silicon wafer), carrier volume is generally 0.015m3, theory density 27000/m3 of >, realizes ultra-large
Loading, improve the useful load of ALD equipment and then improve production efficiency, reduce production cost；
(5) angle of two flank profils of tooth socket is constituted on latus inframedium of the present invention is 6 °, guarantees that wafer (silicon wafer) and carrier are in
Line contact condition avoids scuffing of the carrier to wafer (silicon wafer), improves product qualification rate；
(6) insole board of the present invention and side plate are made of aluminium alloy or U.S. aluminum alloy materials, and each carrier weight is 5 ~ 7
Kg, the thermal capacity of each carrier is 4 ~ 6 kJ/ DEG C, and the stainless steel weight of same size are as follows: 10 ~ 15 kg, the heat of each carrier
Capacity is 5 ~ 7.5 kJ/ DEG C, reduces 20% using carrier weight saving half, the thermal capacity of aluminium alloy or almag,
Carrier weight and thermal capacity are reduced, while increasing product transhipment and the efficiency heated, reduces carrier cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of carrier group of the present invention；
Fig. 2 is the structural schematic diagram of carrier of the present invention；
In figure, 1- carrier, 2- bottom plate, 3- side plate, 4- rack gear.
Specific embodiment
Technical solution of the present invention is described in detail below by attached drawing, but protection scope of the present invention is not limited to
The embodiment.
Embodiment: a kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus, including several groups are arranged side by side
The carrier group of cloth, every group of carrier group are made of 8 carriers 1, and carrier 1 includes the carrier frame that two bottom plates and both side plate surround, together
The bottom plate and side plate of each carrier 1 in group carrier group are end to end, surround hollow column structure.
The bottom plate 2 and side plate 3 of each carrier 1 are made of aluminium alloy or U.S. aluminum alloy materials, and each 1 weight of carrier is 5 ~
7 kg, the thermal capacity of each carrier 1 are 4 ~ 6 kJ/ DEG C.
Several tooth sockets are respectively arranged on the opposite side of both side plate 3, the tooth socket on both side plate 3 corresponds, and corresponding
Two teeth be generally aligned in the same plane；Tooth socket quantity is 200 on the side plate 3 of side, and the spacing between adjacent two tooth socket is 2.38
mm.It is 6 ° that the angle of two flank profils of tooth socket is constituted on side plate 3.
It is also set up between two bottom plates 2 there are two rack gear 4, two rack gears 4 are located at carrier frame facet, upper and lower ends difference
Be fixedly connected with two bottom plates 2, the tooth socket on the tooth socket on rack gear 4 and both side plate 3 corresponds, and any corresponding two tooth position in
Same plane.
When loading wafer, two wafers are put into the same tooth socket of side plate 3, the side to be coated of two wafers is lateral
Outside, the other side is bonded to each other under gravity.Tooth socket carries wafer jointly on rack gear 4 and both side plate 3, and limits the loading position of wafer
It sets.It is spliced to form entirety with two wafers on each carrier 1 in group carrier group with position, the space difference above and below the position wafer
Connection forms airflow channel.Every wafer (silicon wafer) is all in upper and lower two stingy circulation roads, all these stingy circulation roads
Shape is identical, and all gas (containing raw material) all necessarily flows through the airflow channel being made of wafer (silicon wafer), and then to wafer
(silicon wafer) is handled, and utilizes raw material to greatest extent.
As described above, must not be explained although the present invention has been indicated and described referring to specific preferred embodiment
For the limitation to invention itself.It without prejudice to the spirit and scope of the invention as defined in the appended claims, can be right
Various changes can be made in the form and details for it.
Claims (10)
1. a kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus, which is characterized in that arranged side by side including several groups
The carrier group of arrangement, carrier group described in every group are made of multiple carriers, and the carrier includes the load that two bottom plates and both side plate surround
Have frame, it is end to end with the bottom plate and side plate for organizing each carrier in carrier group, surround hollow column structure；
Several tooth sockets are from top to bottom evenly equipped on the both side plate opposite side of each carrier, the tooth socket on both side plate corresponds, and
Corresponding two tooth is generally aligned in the same plane, and corresponding two tooth socket carries two wafers on both side plate, two wafers it is to be coated
Side is laterally outer, and the other side is bonded to each other；It is spliced to form entirety with two wafers on each carrier in group carrier group with position, it should
Space above and below the wafer of position is respectively communicated with to form airflow channel.
2. the flow passage structure according to claim 1 suitable for super large-tonnage atomic layer deposition apparatus, which is characterized in that
Carrier group described in every group is made of 3 ~ 10 carriers.
3. the flow passage structure according to claim 2 suitable for super large-tonnage atomic layer deposition apparatus, which is characterized in that
Carrier group described in every group is made of 6 carriers.
4. the flow passage structure according to claim 1 suitable for super large-tonnage atomic layer deposition apparatus, which is characterized in that
At least one rack gear is additionally provided between two bottom plate, the tooth socket on the tooth socket and both side plate on rack gear corresponds, and
Any corresponding two tooth is generally aligned in the same plane；Tooth socket carries the wafer jointly on the rack gear and both side plate, and described in limitation
The " loaded " position of wafer.
5. the flow passage structure according to claim 4 suitable for super large-tonnage atomic layer deposition apparatus, which is characterized in that
The rack gear is two, and two rack gears are located at carrier frame facet, and upper and lower ends are fixedly connected with two bottom plates respectively.
6. the flow passage structure according to claim 1 suitable for super large-tonnage atomic layer deposition apparatus, which is characterized in that
Tooth socket quantity is 200 ~ 250 on the side plate of side, and the spacing between adjacent two tooth socket is 2 ~ 3 mm.
7. the flow passage structure according to claim 1 suitable for super large-tonnage atomic layer deposition apparatus, which is characterized in that
Tooth socket quantity is 200 on the side plate of side, and the spacing between adjacent two tooth socket is 2.38 mm.
8. the flow passage structure according to claim 1 suitable for super large-tonnage atomic layer deposition apparatus, which is characterized in that
It is 5 ~ 20 ° that the angle of two flank profils of tooth socket is constituted on the side plate.
9. the flow passage structure according to claim 1 suitable for super large-tonnage atomic layer deposition apparatus, which is characterized in that
It is 6 ° that the angle of two flank profils of tooth socket is constituted on the side plate.
10. the flow passage structure according to claim 1 suitable for super large-tonnage atomic layer deposition apparatus, feature exist
In the bottom plate and side plate are made of aluminium alloy or U.S. aluminum alloy materials, and each carrier weight is 5 ~ 7 kg, each carrier
Thermal capacity is 4 ~ 6 kJ/ DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822193218.XU CN209443082U (en) | 2018-12-25 | 2018-12-25 | A kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822193218.XU CN209443082U (en) | 2018-12-25 | 2018-12-25 | A kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus |
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| CN209443082U true CN209443082U (en) | 2019-09-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109385622A (en) * | 2018-12-25 | 2019-02-26 | 南京爱通智能科技有限公司 | A kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus |
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2018
- 2018-12-25 CN CN201822193218.XU patent/CN209443082U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109385622A (en) * | 2018-12-25 | 2019-02-26 | 南京爱通智能科技有限公司 | A kind of flow passage structure suitable for super large-tonnage atomic layer deposition apparatus |
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