CN213752686U - Electronic device - Google Patents

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CN213752686U
CN213752686U CN202120177401.XU CN202120177401U CN213752686U CN 213752686 U CN213752686 U CN 213752686U CN 202120177401 U CN202120177401 U CN 202120177401U CN 213752686 U CN213752686 U CN 213752686U
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energy storage
junction
semiconductor
heat
electronic device
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周志伟
董必文
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Vivo Mobile Communication Co Ltd
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Vivo Mobile Communication Co Ltd
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Abstract

The application discloses electronic equipment includes: a housing; the main board is arranged in the shell; the energy storage piece is arranged in the shell, is positioned between the mainboard and the shell and is configured to supply power to the mainboard; semiconductor refrigeration spare sets up between mainboard and energy storage spare to and set up between energy storage spare and casing, semiconductor refrigeration spare can be with the heat transfer to the energy storage spare of mainboard, and with the heat transfer to the casing of energy storage spare. The electronic equipment heat dissipation device has the advantages that the embodiment of the application is applied, the compact structure and the light and thin semiconductor refrigeration piece are arranged, the main board and the battery of the electronic equipment are subjected to progressive heat dissipation, a heat dissipation fan is not needed to be arranged, the internal space of the electronic equipment can be effectively saved, the electronic equipment is favorably guaranteed to be compact in structure, meanwhile, the semiconductor cooling fins can be used for transferring heat in an active mode, and therefore the electronic equipment heat dissipation device has a better heat dissipation effect, and the electronic equipment heat dissipation effect can be remarkably improved on the premise that the compact structure is effectively guaranteed.

Description

Electronic device
Technical Field
The application belongs to the technical field of electronic equipment heat dissipation, and particularly relates to an electronic equipment.
Background
In the related art, as the performance and integration of the electronic device are improved, the heat generation amount per unit area of the electronic device is increased sharply, and if the heat is accumulated, a local high temperature is formed, which causes a failure or even damage of the electronic product, so that the electronic device needs to be cooled.
In the conventional electronic device, a structure such as a fan is generally provided to actively dissipate heat of the electronic device, or a structure such as a heat sink is generally provided to passively dissipate heat of the electronic device. The active heat dissipation structures such as the fan and the like occupy larger internal space, are not beneficial to ensuring the structural compactness of the electronic equipment, have limited passive heat dissipation capacity, and cannot meet the high-strength heat dissipation requirement.
Therefore, how to improve the heat dissipation effect while ensuring the compactness of the electronic device is an urgent technical problem to be solved.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application aims to provide electronic equipment, which can improve the heat dissipation effect of the electronic equipment on the premise of ensuring the compact structure.
In order to solve the technical problem, the present application is implemented as follows:
an embodiment of the present application provides an electronic device, including:
a housing;
the main board is arranged in the shell;
the energy storage piece is arranged in the shell, is positioned between the mainboard and the shell and is configured to supply power to the mainboard;
semiconductor refrigeration spare sets up between mainboard and energy storage spare to and set up between energy storage spare and casing, semiconductor refrigeration spare can be with the heat transfer to the energy storage spare of mainboard, and with the heat transfer to the casing of energy storage spare.
In the embodiment of the application, the semiconductor refrigerating element is arranged in the electronic equipment to dissipate heat of a main board and an energy storage element (such as a battery) of the electronic equipment. Specifically, the operating principle of the semiconductor refrigerating element utilizes the Peltier effect (Peltier effect) refrigerating principle, and the Peltier effect means that when current passes through a loop formed by different conductors, in addition to irreversible joule heat, heat absorption and heat release phenomena respectively occur at joints of different conductors (metal/semiconductor) along with different current directions.
That is, the semiconductor cooling element is able to "carry" heat from one end thereof to the other end, thereby effecting heat transfer. Therefore, set up semiconductor refrigeration spare simultaneously between mainboard and energy storage spare to and between energy storage spare and the casing, through semiconductor refrigeration spare with the heat transfer to the energy storage spare of mainboard production on, and further with the heat transfer of energy storage spare to the casing effluvium, form into the heat radiation structure of hierarchical formula "marching" one-tenth.
Wherein, because in the electronic equipment course of operation, the main piece that generates heat is the chip, therefore the temperature of mainboard is generally the highest, and the energy storage spare, like the battery in non-charging process, its temperature generally can not be very high, consequently at first through first layer semiconductor refrigeration spare, with the temperature transmission of mainboard to energy storage spare, can realize the heat dissipation to the mainboard effectively. Further, through second floor semiconductor refrigeration spare, with the heat transfer to the casing of energy storage spare, can give off the heat of mainboard and battery to the outside by the casing, realize the efficient heat dissipation.
The embodiment of the application is applied, through setting up a semiconductor refrigeration piece with compact and light-thin structure, the mainboard and the battery of the electronic equipment are subjected to progressive heat dissipation, so that a heat dissipation fan is not needed to be arranged, the internal space of the electronic equipment can be effectively saved, the structural compactness of the electronic equipment is favorably ensured, meanwhile, the semiconductor cooling fin can be used for transferring heat in an active mode, and therefore the semiconductor cooling fin has a better heat dissipation effect compared with passive heat dissipation, and the heat dissipation effect of the electronic equipment is remarkably improved on the premise that the structural compactness is effectively ensured.
Drawings
Fig. 1 shows a schematic structural diagram of an electronic device according to an embodiment of the application;
FIG. 2 shows a schematic structural diagram of a semiconductor cooling element according to an embodiment of the present application;
FIG. 3 is a schematic structural diagram illustrating a P-N junction assembly in a semiconductor refrigeration device according to an embodiment of the application;
FIG. 4 is a schematic diagram illustrating one arrangement of P-N junction assemblies in a semiconductor cooling device according to an embodiment of the present disclosure;
fig. 5 shows a second schematic diagram of an arrangement of P-N junction components in the semiconductor cooling device according to the embodiment of the present application.
In fig. 1 to 5, the correspondence between reference numerals and components is as follows:
100 electronic devices, 102 shells, 104 main boards, 106 energy storage elements, 107 first semiconductor refrigeration elements, 108 second semiconductor refrigeration elements and 109 heat conduction elements;
1072 a first cold end, 1074 a first hot end;
1082 a second cold side, 1084 a second hot side;
112 cold side thermally conductive substrate, 114 hot side thermally conductive substrate, 116P-N junction assembly;
1162P-type semiconductor, 1164N-type semiconductor, 1166 first electrode, 1168 second electrode.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application are capable of operation in sequences other than those illustrated or described herein. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
In the description of the present application, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present application.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
The mobile communication device provided by the embodiment of the present application is described in detail with reference to the accompanying drawings through specific embodiments and application scenarios thereof.
In some embodiments of the present application, fig. 1 shows a schematic structural diagram of an electronic device 100 according to an embodiment of the present application, and specifically, as shown in fig. 1, the electronic device 100 includes:
a housing 102;
a main board 104 disposed in the housing 102;
the energy storage component 106 is arranged in the shell 102, and the energy storage component 106 is positioned between the main board 104 and the shell 102 and is configured to supply power to the main board 104;
the semiconductor refrigeration piece is arranged between the main board 104 and the energy storage piece 106 and between the energy storage piece 106 and the shell 102, and the semiconductor refrigeration piece can transfer heat of the main board 104 to the energy storage piece 106 and transfer heat of the energy storage piece 106 to the shell 102.
In the embodiment of the present application, the semiconductor cooling device is disposed in the electronic device 100 to dissipate heat of the main board 104 and the energy storage device 106 (such as a battery) of the electronic device 100. Specifically, the operating principle of the semiconductor refrigerating element utilizes the Peltier effect (Peltier effect) refrigerating principle, and the Peltier effect means that when current passes through a loop formed by different conductors, in addition to irreversible joule heat, heat absorption and heat release phenomena respectively occur at joints of different conductors (metal/semiconductor) along with different current directions.
That is, the semiconductor cooling element is able to "carry" heat from one end thereof to the other end, thereby effecting heat transfer. Therefore, the semiconductor refrigeration element is arranged between the main board 104 and the energy storage element 106 and between the energy storage element 106 and the housing 102, heat generated by the main board 104 is transferred to the energy storage element 106 through the semiconductor refrigeration element, and further the heat of the energy storage element 106 is transferred to the housing 102 to be dissipated, so that a hierarchical progressive heat dissipation structure is formed.
In the working process of the electronic device 100, the main heating element is a chip, so the temperature of the motherboard 104 is generally the highest, and the temperature of the energy storage element 106, such as a battery, is generally not very high in the non-charging process, so the temperature of the motherboard 104 is transmitted to the energy storage element 106 through the first layer of semiconductor cooling element, and the heat dissipation of the motherboard 104 can be effectively realized. Further, the heat of the energy storage element 106 is transferred to the housing 102 through the second layer of semiconductor cooling element, so that the heat of the main board 104 and the battery can be dissipated to the outside through the housing 102, and efficient heat dissipation is realized.
The main board 104 may be a Printed Circuit Board (PCB) main board 104 carrying electronic components, a dual-layer main board 104, any one or more main control boards or slave control boards in the multiple main boards 104, or an electric control board or a power supply board. The embodiment of the present application does not limit the specific form of the "main board 104".
The energy storage element 106 may include a lithium battery, a carbonate battery, a super capacitor, and the like, and the embodiment of the present application does not limit the specific form of the energy storage element 106.
In the related technology, electronic components are continuously miniaturized and densified, and the power of the electronic components is continuously improved, along with the leap of the operation processing capability of chips of electronic products such as mobile phones, flat panels, notebook computers and the like, the continuous renovation of the screen refresh rate and the continuous expansion of the battery capacity, the heat generated by the electronic products per unit area is also increased rapidly, if the heat cannot be dissipated in time, local high temperature is formed, so that the electronic components are broken down, the working stability of the electronic components is influenced, and the service life of the electronic components is even shortened.
Relevant researches show that the reliability of an electronic component is reduced by 10% when the temperature of the electronic component is increased by 2 ℃, and the service life of the electronic component is reduced to about one sixth of 25 ℃ when the working temperature reaches 50 ℃, so that the strength of heat conduction and heat dissipation capacity is the key for whether the electronic product can be stably established in a new period, and how to improve the heat dissipation performance of the electronic product is also an extremely important subject at present.
In the thermal design of current electronic products, active heat dissipation and passive heat dissipation are generally adopted. For larger products such as notebook computers and desktop computers, active heat dissipation is generally adopted, that is, forced convection is realized through a fan and a heat sink, in order to fully ensure smooth airflow, the airflow flows through each radiating fin of the heat sink as much as possible, and the placement position of the fan is generally positioned below the heat sink, so that the airflow directly flows through a pore channel to take away heat.
Active heat dissipation needs great arrangement space to hold structures such as fan, wind channel, fin, and is not suitable for small-size equipment, and the fan can produce great noise in the operation process, influences the use and experiences.
The passive heat dissipation method is generally adopted for the miniaturized electronic devices 100 such as mobile phones and flat panels, but the passive heat dissipation capability is poor, and processors of the mobile phones and the flat panels are easily overheated when the mobile phones and the flat panels operate at a higher dominant frequency.
By the adoption of the embodiment of the application, the mainboard 104 and the battery of the electronic device 100 are subjected to progressive heat dissipation by the aid of the semiconductor refrigeration piece which is compact in structure, light and thin, and accordingly a heat dissipation fan, a heat dissipation fin or an air duct and the like are not needed to be arranged, on one hand, the internal space of the electronic device 100 can be effectively saved, the compact structure of the electronic device 100 is guaranteed, the electronic device can be suitable for small devices such as a mobile phone and a tablet computer, on the other hand, noise pollution cannot be generated in heat dissipation work, and therefore interference cannot be caused to user use.
Meanwhile, the semiconductor cooling fin can transfer heat actively, so that the heat dissipation effect is better compared with a passive heat dissipation technology, when the electronic equipment 100 such as a mobile phone and a flat panel operates at higher dominant frequency, the heat can still be transferred to the shell in time to be dissipated, the conditions of heat accumulation and rapid temperature rise of a processor are avoided, and the performance and the service life of the electronic equipment 100 such as the mobile phone and the flat panel are favorably improved.
Therefore, the embodiment of the application can significantly improve the heat dissipation effect of the electronic device 100 on the premise of effectively ensuring the compact structure.
In some embodiments of the present application, fig. 2 shows a schematic structural diagram of a semiconductor refrigeration device according to an embodiment of the present application, and fig. 3 shows a schematic structural diagram of a P-N junction assembly 116 in the semiconductor refrigeration device according to an embodiment of the present application, and as shown in fig. 2 and fig. 3, the semiconductor refrigeration device includes:
a cold-side thermally conductive substrate 112;
a hot side heat conducting substrate 114, the hot side heat conducting substrate and the cold side heat conducting substrate being stacked;
a plurality of P-N junction assemblies 116, the plurality of P-N junction assemblies 116 positioned between the cold side thermally conductive substrate 112 and the hot side thermally conductive substrate 114, the P-N junction assemblies 116 comprising:
a P-type semiconductor 1162;
an N-type semiconductor 1164 arranged in parallel with the P-type semiconductor 1162;
a first electrode 1166 connected to the cold-side thermally conductive substrate 112, a first terminal of the P-type semiconductor 1162 connected to one of the first electrodes 1166;
and a second electrode 1168 connected to the hot-side thermally conductive substrate 114, and a second terminal of the P-type semiconductor 1162 and a first terminal of the N-type semiconductor 1164 are connected to the second electrode 1168.
In the present embodiment, the semiconductor cooling device includes a cold-side thermally conductive substrate 112, a hot-side thermally conductive substrate 114, and a P-N junction assembly 116. Wherein the cold side heat conducting substrate 112 and the hot side heat conducting substrate 114 are both made of materials with good heat conducting properties.
The P-N junction element 116 includes a P-type semiconductor 1162, an N-type semiconductor 1164, a first electrode 1166, and a second electrode 1168. Specifically, as shown in fig. 2, when a piece of N (negative) type semiconductor material and a piece of P (positive) type semiconductor material are joined to form a P-N junction, a direct current power source is turned on in the circuit, and energy transfer can occur.
A P-type semiconductor 1164, a P-type semiconductor 1162, a first electrode 1166, and a second electrode 1168 can be formed as a "P-N junction element 116".
Current flows from N-type semiconductor 1164 to the junction of P-type semiconductor 1162, where it absorbs heat, acting as the cooling side, and current flows from P-type semiconductor 1162 to the junction of N-type semiconductor 1164, where it releases heat, acting as the cooling side. The amount of heat absorbed and released is determined by the current value, the P-N junction pair, and the peltier coefficient of the P-type semiconductor 1162 and the N-type semiconductor 1164.
The absorbed or released heat Q satisfies the following relationship:
Q=M(πN-πP)I;
wherein, pi N and pi P are respectively the Peltier coefficients of the N-type conductor and the P-type conductor, I is the current value flowing through the semiconductor, and M is the P-N junction logarithm.
Specifically, cold-side thermally conductive substrate 112 forms the cold side of the semiconductor refrigeration member, and hot-side thermally conductive substrate 114 forms the hot side of the semiconductor refrigeration member, which is capable of transporting heat from the cold side to the hot side, and as a result, the cold-side temperature of the semiconductor refrigeration member may decrease and the hot-side temperature may increase.
According to different input current directions, the cold end and the hot end of the semiconductor refrigerating element can be switched.
In some embodiments of the present application, as shown in fig. 1, the number of semiconductor pieces is two, namely, a first semiconductor cooling piece 107 and a second semiconductor cooling piece 108;
the first semiconductor refrigeration device 107 is located between the main board 104 and the energy storage device 106, and includes a first cold end 1072 and a first hot end 1074, the first cold end 1072 is disposed toward the main board 104, and the first hot end 1074 is disposed toward a first side of the energy storage device 106;
the second semiconductor cooling member 108 is located between the energy storage member 106 and the housing 102 and includes a second cold end 1082 and a second hot end 1084, the second cold end 1082 being disposed toward the second side of the energy storage member 106 and the second hot end 1084 being disposed toward the housing 102.
In this application embodiment, set up first semiconductor refrigeration spare 107 between mainboard 104 and energy storage piece 106, the cold end of first semiconductor refrigeration spare 107 is towards mainboard 104, and the hot end is towards the first side of energy storage piece 106, consequently, can carry the heat of mainboard 104 to energy storage piece 106 through first semiconductor refrigeration spare 107 on to the realization is to the initiative heat dissipation of mainboard 104.
Set up second semiconductor refrigeration piece 108 between energy storage piece 106 and casing 102, the cold end of second semiconductor refrigeration piece 108 is towards energy storage piece 106, and the hot end is towards casing 102, consequently, can carry the heat on the energy storage piece 106 to casing 102 through second semiconductor refrigeration piece 108 on to give off the outside of heat to electronic equipment 100 by casing 102, thereby realize the initiative heat dissipation that the hierarchical formula is progressive.
In the working process of the electronic device 100, the temperature of the main board 104 is the highest, and the temperature of the energy storage element 106 is generally lower, so that the temperature of the main board 104 is transmitted to the energy storage element 106 through the first semiconductor cooling element 107, and the heat dissipation of the main board 104 can be effectively realized.
At this time, the heat of the energy storage element 106 is generated by the main board 104 and the self, and further, the heat of the energy storage element 106 is transferred to the housing 102 through the second semiconductor cooling element 108, so that the heat of the main board 104 and the battery can be dissipated to the outside from the housing 102, and efficient heat dissipation is realized.
It can be understood that, by providing the material of the housing 102 as a material with a high thermal conductivity, such as metal copper, metal aluminum, carbon fiber, etc., or providing the housing 102 with a heat dissipation structure, such as a heat dissipation hole, etc., the heat dissipation effect of the electronic device 100 can be further improved.
The embodiment of the application adopts a step-by-step cooling mode, sequentially carries out step-by-step cooling on heat sources in electronic products such as mobile phones, and finally transmits heat to the mobile phone rear shell and the heat dissipation pore canal thereof to be dissipated. The semiconductor refrigerating device, such as a semiconductor miniature refrigerating film device, is in large-area contact with a heat generating source, and is mainly arranged between a main board, a battery and a rear cover (a shell) in an electronic product in a structural arrangement mode.
It should be noted that, the integrated design structure can flexibly increase or remove the number of the semiconductor cooling elements according to the actual internal space structure of the electronic product.
In some embodiments of the present application, the first cold end 1072 is adapted to the motherboard 104, and the first cold end 1072 is affixed to the motherboard 104;
the first hot end 1074 is adapted to the first side of the energy storage device 106, and the first hot end 1074 is attached to the first side of the energy storage device 106;
second cold end 1082 is mated to the second side of energy storage member 106, and second cold end 1082 is mated to the second side of energy storage member 106.
In the present embodiment, the first cold end 1072 is adapted to the motherboard 104, and the first cold end 1072 is attached to the surface of the motherboard 104. Wherein, "fit" refers to fit in shape and size. Specifically, because the semiconductor refrigeration piece is easily processed, and can set to very thin "film" shape, consequently according to the shape of mainboard 104, set up first semiconductor refrigeration piece 107 into the film with the shape looks adaptation of mainboard 104, as a result, the first cold junction 1072 of first semiconductor refrigeration piece 107, with mainboard 104 looks adaptation, consequently make the radiating effect of first semiconductor refrigeration piece 107 can cover the mainboard 104 wholly, thereby improve the radiating effect of mainboard 104, guarantee that temperature is even on the mainboard 104, prevent that the heat dissipation from not covering, lead to the condition of local high temperature.
Similarly, according to the shape of energy storage piece 106, set up second semiconductor refrigeration piece 108 into the film with the shape looks adaptation of energy storage piece 106 second side, as a result, the second cold junction 1082 of second semiconductor refrigeration piece 108, with energy storage piece 106 adaptation, consequently make the radiating effect of second semiconductor refrigeration piece 108 can cover energy storage piece 106 wholly, thereby improve the radiating effect of energy storage piece 106, guarantee that energy storage piece 106 goes up the temperature evenly, prevent that the heat dissipation from not covering, lead to the condition of local high temperature.
In some embodiments of the present application, as shown in fig. 1, the electronic device 100 further comprises: the heat conducting member 109 is located between the second hot end 1084 and the housing 102, and two sides of the heat conducting member 109 are respectively attached to the second hot end 1084 and the housing 102.
In the embodiment of the present application, the electronic device 100 further includes a heat conducting member 109, and the heat conducting member 109 is disposed between the second hot end 1084 and the housing 102, that is, between the second semiconductor cooling member 108 and the housing 102. The heat conducting member 109 is a heat conducting structure, and the heat conducting member 109 may be an aluminum heat conducting sheet, a heat conducting silicone sheet, a carbon heat conducting sheet, or the like.
The two sides of the heat-conducting plate are respectively attached to the second hot end 1084 of the second semiconductor cooling element 108 and the housing 102, so as to ensure the heat transfer effect and further improve the heat dissipation efficiency.
In some embodiments of the present application, fig. 4 shows one of the schematic diagrams of the arrangement of the P-N junction assemblies 116 in the semiconductor refrigeration device according to the embodiments of the present application, and specifically, as shown in fig. 4, a plurality of P-N junction assemblies 116 are all connected in series.
In this embodiment, the P-N junction element 116 is connected in series, when an external power supply supplies power to the P-N junction element 116, current continuously flows from the P-type semiconductor 1162 to the N-type semiconductor 1164, and then flows from the N-type semiconductor 1164 to the P-type semiconductor 1162, and in a current flowing process, current of each P-N junction through which current flows is the same, and according to the peltier effect refrigeration principle, when current flows from the N-type semiconductor 1164 to the P-type semiconductor 1162, a junction of the first electrode 1166 continuously absorbs heat, so as to achieve the effects of cooling and refrigeration.
In some embodiments of the present application, as shown in FIG. 4, a plurality of P-N junction assemblies 116 are coiled along the inner surfaces of the cold side and hot side heat conducting substrates 112, 114.
In the embodiment of the present application, a plurality of P-N junction assemblies 116 are wound along the inner surfaces of the cold-side and hot-side heat-conducting substrates 112 and 114 in a "pi" shape, and further more P-N junction assemblies 116 are disposed in a limited area, thereby improving heat dissipation efficiency.
In some embodiments of the present application, fig. 5 shows a second schematic diagram of an arrangement of P-N junction assemblies 116 in a semiconductor refrigeration device according to an embodiment of the present application, and specifically, as shown in fig. 5, a plurality of P-N junction assemblies 116 are connected in parallel.
In the embodiment of the present application, the P-N junction elements 116 are connected in parallel, when an external power supply supplies power to the P-N junction elements 116, voltages at two ends of each group of P-N junction elements 116 are equal, so that when the resistances of the P-N junction elements 116 are similar, current continuously flows from the P-type semiconductor 1162 to the N-type semiconductor 1164, and then flows from the N-type semiconductor 1164 to the P-type semiconductor 1162, the current of each P-N junction through which the current flows is also similar, according to the peltier effect refrigeration principle, when the current flows from the N-type semiconductor 1164 to the P-type semiconductor 1162, the junction of the first electrode 1166 continuously absorbs heat, thereby achieving the effects of cooling and refrigeration.
In some embodiments of the present application, as shown in FIG. 5, at least two P-N junction components 116 of the plurality of P-N junction components 116 are connected in series in a P-N junction component chain; a plurality of P-N junction component chains are connected in parallel.
In the embodiment of the present application, as shown in fig. 5, a plurality of P-N junction components 116 are grouped to obtain a plurality of groups, and at least two P-N junction components 116 in each group are connected in series to form a P-N junction component chain.
And the P-N junction component chains are connected in parallel. Wherein the number of P-N junction components 116 included in each P-N junction component chain may be equal or unequal.
For example, 16P-N junction devices 116 are provided in a semiconductor device, wherein 4P-N junction devices 116 are connected in series to form a P-N junction device chain, so that 4P-N junction device chains are obtained.
Further, the obtained 4P-N junction component chains are connected in parallel, and the arrangement of the P-N junction components 116 is completed.
The embodiment of the application selects the P-type semiconductor 1162 and the N-type semiconductor 1164 with the peltier coefficient as high as possible, and increases the number of the P-N junction assemblies 116 in the unit area to improve the heat dissipation effect of the semiconductor refrigeration member, so as to obtain the refrigeration film device, which is beneficial to ensuring the compactness of the electronic device 100, has a good heat dissipation effect, and can significantly improve the heat dissipation effect of the electronic device 100 on the premise of effectively ensuring the compactness of the internal structure of the electronic device 100.
In some embodiments of the present application, as shown in FIG. 3, the second terminal of the N-type semiconductor 1164 of one P-N junction element 116 of two adjacent P-N junction elements 116 is connected to the first electrode 1166 of the other P-N junction element 116.
In the embodiment of the present application, the P-N junction element 116 includes a P-type semiconductor 1162, an N-type semiconductor 1164, a first electrode 1166 and a second electrode 1168, wherein the P-type semiconductor 1162 and the N-type semiconductor 1164 of the same P-N junction element 116 are connected to the same second electrode 1168, and two adjacent P-N junction elements 116 share the same first electrode 1166.
Specifically, as an example, two P-N junction components 116 are connected in series to form a P-N junction component chain, the first electrode (1) of the first P-N junction component 116 serves as a current inflow end of the P-N junction component chain, the first electrode (2) of the first P-N junction component 116 is simultaneously connected with the N-type semiconductor 1164 of the first P-N junction component 116 and the P-type semiconductor 1162 of the second P-N junction component 116, that is, the first electrode (2) of the first P-N junction component 116 is simultaneously formed as the first electrode (1) of the second P-N junction component 116. The first electrode (2) of the second P-N junction element 116 serves as the current outflow end of the P-N junction element chain.
Through the connection mode of the P-N junction assemblies 116, a plurality of P-N junction assemblies 116 can be efficiently connected, the production cost is reduced, the number of the P-N junction assemblies 116 in a unit area is increased, and the heat dissipation effect of the semiconductor refrigerating piece is improved.
In the above embodiments of the present application, the electronic device includes a mobile phone, a tablet computer, a notebook computer, a palm computer, a vehicle-mounted electronic device, a wearable device, a personal digital assistant, and the like.
It can be understood that the electronic device in the embodiment of the present application is not limited to the type of product mentioned by way of example, and any electronic device with heat dissipation requirement is within the scope of the embodiment of the present application.
This application is through simple integrated structure design, through the multilayer semiconductor refrigeration piece, like the miniature refrigeration film of ultra-thin semiconductor, can carry out the cooling of homogenization to the temperature field of electronic product inner space, and need not set up the great various heat dissipation device of volume, can be when the thickness that does not show the increase electronic product with weight, maintain the controllable of electronic product inner temperature scope. Meanwhile, the structural design can be flexibly corrected according to the actual internal space of the product, the effect is stable for a long time, and the running stability and the product performance of the electronic component can be effectively maintained.
In the embodiment of the present application, it should be noted that, a mobile communication device refers to an electronic device that has a "communication" function and is capable of "moving" to operate, and the mobile communication device in the embodiment of the present application is not limited to the above listed electronic product types, and any electronic device that is capable of "communicating" and "moving" to operate is within the protection scope of the present application.
It should be noted that in the description of the present specification, reference to the description of the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples", etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the application, the scope of which is defined by the claims and their equivalents.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. An electronic device, comprising:
a housing;
the main board is arranged in the shell;
an energy storage member disposed within the housing, the energy storage member being located between the motherboard and the housing and configured to supply power to the motherboard;
the semiconductor refrigeration piece is arranged between the mainboard and the energy storage piece and between the shell, and the semiconductor refrigeration piece can transfer the heat of the mainboard to the energy storage piece and transfer the heat of the energy storage piece to the shell.
2. The electronic device of claim 1, wherein the semiconductor cooling element comprises:
a cold-side heat-conducting substrate;
the hot end heat conduction substrate and the cold end heat conduction substrate are arranged in a stacked mode;
a plurality of P-N junction assemblies positioned between the cold side thermally conductive substrate and the hot side thermally conductive substrate, the P-N junction assemblies comprising:
a P-type semiconductor;
an N-type semiconductor arranged in parallel with the P-type semiconductor;
the first electrode is connected with the cold-end heat conduction substrate, and the first end of the P-type semiconductor is connected with one first electrode;
and the second end of the P-type semiconductor and the first end of the N-type semiconductor are both connected with the second electrode.
3. The electronic device of claim 2, wherein the number of the semiconductor devices is two, namely a first semiconductor device and a second semiconductor device;
the first semiconductor refrigerating element is positioned between the main board and the energy storage element and comprises a first cold end and a first hot end, the first cold end is arranged towards the main board, and the first hot end is arranged towards the first side of the energy storage element;
the second semiconductor refrigerating element is located between the energy storage element and the shell and comprises a second cold end and a second hot end, the second cold end faces the second side of the energy storage element, and the second hot end faces the shell.
4. The electronic device of claim 3 wherein the first cold end is affixed to the motherboard;
the first hot end is attached to the first side of the energy storage element;
the second cold end is attached to the second side of the energy storage member.
5. The electronic device of claim 3, further comprising:
the heat conducting piece is positioned between the second hot end and the shell, and two sides of the heat conducting piece are respectively attached to the second hot end and the shell.
6. The electronic device of any of claims 2-5, wherein a plurality of the P-N junction components are each connected in series.
7. The electronic device of claim 6, wherein a plurality of the P-N junction assemblies are coiled along inner surfaces of the cold side and hot side thermally conductive substrates.
8. The electronic device according to any one of claims 2 to 5, wherein a plurality of the P-N junction components are connected in parallel.
9. The electronic device of claim 8, wherein at least two of the P-N junction components in a plurality of the P-N junction components are connected in series in a chain of P-N junction components;
a plurality of the P-N junction component chains are connected in parallel.
10. The electronic device according to claim 7 or 9, wherein the second terminal of the N-type semiconductor of one of the P-N junction assemblies is connected to the first electrode of the other of the P-N junction assemblies.
CN202120177401.XU 2021-01-22 2021-01-22 Electronic device Active CN213752686U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113677156A (en) * 2021-08-16 2021-11-19 维沃移动通信有限公司 Heat dissipation back splint and electronic equipment subassembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113677156A (en) * 2021-08-16 2021-11-19 维沃移动通信有限公司 Heat dissipation back splint and electronic equipment subassembly

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