CN213507190U

CN213507190U - Protective device for PECVD wafer heating

Info

Publication number: CN213507190U
Application number: CN202022199614.0U
Authority: CN
Inventors: 贾昆良
Original assignee: Jingjiang Xianfeng Semiconductor Technology Co ltd
Current assignee: Jiangsu Xianfeng Precision Technology Co ltd
Priority date: 2020-09-30
Filing date: 2020-09-30
Publication date: 2021-06-22
Anticipated expiration: 2030-09-30

Abstract

The utility model discloses a protective device for PECVD wafer heating, which is arranged on the surface of a wafer heater; is characterized by comprising a protection device main body, wherein the upper surface of the protection device main body is provided with an anodic oxidation film; the protection device main body is connected and fixed with the wafer heater through a fixing screw, an insulating cover is arranged at the top of the fixing screw, and the insulating cover is matched and connected with the outer end of the fixing screw; the surface of the wafer heater is not damaged in the process, and the wafer heater can be continuously produced only by replacing the surface protection device with low cost in time, so that the maintenance cost is greatly reduced, and the original complex process of disassembling the wafer heater is simplified.

Description

Protective device for PECVD wafer heating

Technical Field

The utility model relates to a field of wafer heating especially relates to a protection device is used in PECVD wafer heating.

Background

The PECVD is plasma enhanced chemical vapor deposition for processing a semiconductor chip, a wafer heater is key equipment for processing the semiconductor chip, particularly plays a role in bearing and adsorbing the wafer and providing heating in wafer heating, the wafer is contacted with the surface of the wafer heater in the process along with the increase of the using times, an anodic oxidation layer insulated on the heating surface of the wafer in a high-temperature state is continuously abraded by the wafer, the surface of the wafer is irregularly ignited and the surface of the wafer heater is damaged, the IC yield is reduced, the local thickness of a formed film of the wafer is uneven, and the wafer is scrapped due to metal pollution caused by over-polishing in CMP grinding; since the wafer is irregularly ignited, the process is unstable, the scrapping is difficult to prevent, and the expensive heater is also subjected to surface abrasion and needs to be replaced in advance, and the cost is high, an improvement method is urgently needed to improve the yield of the IC and reduce the cost.

Disclosure of Invention

The utility model aims at providing a protection device is used in heating of PECVD wafer, simple structure, the installation is dismantled conveniently, and excellent in use effect has improved the quality of wafer greatly, has prolonged wafer heater's life, has solved above technical problem.

In order to realize the technical purpose, reach foretell technical requirement, the utility model discloses the technical scheme who adopts is: the protective device for PECVD wafer heating is arranged on the surface of the wafer heater; the method is characterized in that: the device comprises a protection device main body, wherein an anodic oxide film is arranged on the upper surface of the protection device main body; the protection device main body is connected and fixed with the wafer heater through the fixing screws, the top of each fixing screw is provided with an insulating cover, and the insulating covers are connected with the outer ends of the fixing screws in a matched mode.

Preferably: the protection device main part in the middle of be provided with wafer lifting thimble hole, circle lifting thimble hole sets up on same circumference, becomes triangular distribution, the protection device main part evenly is provided with the fixed orifices of a plurality of installation fixed screw along the hoop, the fixed orifices sets up to the ladder through-hole.

Preferably: the fixing screw is in a step shape matched with the fixing hole and comprises a threaded part, a positioning part and a screwing part which is arranged as an inner hexagon; one side of the screwing part, which is far away from the end surface, is provided with a connecting threaded hole for connecting the insulating cover; the connecting threaded hole and the fixing screw are coaxial.

Preferably: the insulating cover comprises a cover body and convex steps, locking threads matched with the connecting threaded holes are arranged on the surfaces of the steps, and screwing holes are symmetrically formed in the end face of the cover body.

Preferably: the end face of the protection device main body is provided with a wafer limiting groove.

The utility model has the advantages that; the protective device for heating the PECVD wafer has the advantages that the upper surface of the protective device is subjected to anodic oxidation treatment to generate an oxide film, and the back surface of the protective device is shielded to ensure a bare aluminum state and good conductivity; the protective device is fixed on the wafer heater by using screws and a torque wrench, so that the protective device is convenient to mount and dismount; the heat of the wafer heater is conducted to the wafer through the protection device, the surface of the wafer heater is not damaged in the technological process, the production can be continued only by replacing the surface protection device with low cost in time, the maintenance cost is greatly reduced, and the original complex process of disassembling the wafer heater is simplified.

Drawings

FIG. 1 is a schematic view of the mounting structure of the protection device and the wafer heater of the present invention;

FIG. 2 is an enlarged view of I of FIG. 1 according to the present invention;

FIG. 3 is a schematic structural view of the present invention;

fig. 4 is a cross-sectional view taken along line B-B of fig. 3 in accordance with the present invention;

FIG. 5 is an enlarged view of II in FIG. 4 according to the present invention;

FIG. 6 is a schematic view of the fixing screw structure of the present invention;

fig. 7 is a schematic structural view of the insulating cover of the present invention;

in the figure: 1. a protection device main body; 1-1, lifting a top pinhole by a wafer; 1-2, a wafer limiting groove; 1-3, fixing holes; 2. fixing screws; 2-1, fixing the screw main body; 2-2. screw part; 2-3, positioning part; 2-4, screwing part; 2-5, connecting the threaded hole; 3. an insulating cover; 3-1. a cover body; 3-2, locking the threads; 3-3, screwing the hole tightly; 4. a wafer heater.

Detailed Description

In order to make the object, technical solution and beneficial technical effects of the present invention clearer, the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments;

in the drawings: the protective device for PECVD wafer heating is arranged on the surface of the wafer heater 4; the device is characterized by comprising a protection device main body 1, wherein an anodic oxidation film is arranged on the upper surface of the protection device main body 1; the protection device main body 1 is connected and fixed with the wafer heater 4 through the fixing screws 2, the insulating cover 3 is arranged at the top of the fixing screws 2, and the insulating cover 3 is matched and connected with the outer ends of the fixing screws 2.

The middle of the protection device main body 1 is provided with a wafer lifting thimble hole 1-1, the circle lifting thimble holes 1-1 are arranged on the same circumference and distributed in a triangular shape, the protection device main body 1 is uniformly provided with a plurality of fixing holes 1-3 for installing fixing screws 2 along the annular direction, and the fixing holes 1-3 are arranged into step through holes. The fixing screw 2 is arranged in a step shape matched with the fixing hole 1-3 and comprises a threaded part 2-2, a positioning part 2-3 and a hexagonal socket screwing part 2-4 arranged on a fixing screw main body 2-1; one side of the screwing part 2-4, which is far away from the end face, is provided with a connecting threaded hole 2-5 for connecting the insulating cover; the connecting threaded holes 2-5 and the fixing screws 2 are coaxially arranged. The insulating cover 3 comprises a cover body 3-1 and a convex step, the surface of the step is provided with a locking thread 3-2 matched with the connecting threaded hole, and the end face of the cover body 3-1 is symmetrically provided with screwing holes 3-3. The end face of the protection device main body 1 is provided with wafer limiting grooves 1-2, so that the wafers are effectively prevented from shifting.

The utility model discloses a concrete implementation: the aluminum alloy is accurately processed into the round protective device body, the limiting groove and the fixing hole for fixing are processed on the protective device body, the upper surface of the protective device body is subjected to anodic oxidation treatment to generate an oxide film with the thickness of about 15 microns, and the lower surface of the protective device is shielded to ensure the bare aluminum state and good conductivity; the protective device is fixed on the wafer heater by using the fixing screw and the torque wrench, the heat of the wafer heater is conducted to the wafer through the protective device, the surface of the wafer heater is not damaged in the technological process, the production can be continued only by replacing the low-cost surface protective device in time, the cost is greatly reduced, and the original complex process of disassembling the wafer heater is simplified.

Specifically, the protective device for heating the PECVD wafer adopts an aluminum alloy 6061 plate with good heat conduction as a substrate, so that the heat loss in the use process is reduced; precisely processing the blank to the size of a design drawing, and controlling the flatness within 0.02 mm; the aluminum alloy 6061 plate can ensure the uniformity and continuity of a subsequent oxidation film after strict homogenization treatment; detecting the uniformity of the microstructure; the precisely designed groove depth ensures the wafer limit; the chamfering of the limiting notch part is strictly controlled, so that the ignition phenomenon is reduced; the fixing hole is a counter bore, and the size of the small hole section of the counter bore is controlled, so that the limiting function during installation is realized; carrying out anodic oxidation treatment on the mouth part area of the countersunk head, and designing the rest surfaces as bare aluminum; the mouth of the countersunk hole is provided with a small circular groove designed to accommodate the insulating cover.

Carrying out sand blasting treatment on the upper surface of the wafer heater surface protection device; carrying out electrolytic polishing treatment after sand blasting treatment, and controlling the integral roughness to be Ra1.0-Ra1.5; the effective treatment and the heat treatment are combined in the processing process of the protective device; and (4) carrying out high-temperature annealing treatment before finish machining to remove residual stress. The upper surface of the protection device is pretreated before anodic oxidation to control the roughness; the generation speed of the oxide film is accurately controlled, and the anodic oxide film with the thickness of 15 microns, which can effectively reduce ignition and adhesion, is obtained.

The principle of the invention is as follows: the utility model discloses a protection device is used in PECVD wafer heating, when carrying out the technology, guarantee that the wafer is not with the wafer heater direct contact that the price is expensive, the wafer falls on this protector, only need during the maintenance dismantle low-cost surface protector can, heat conduction is good between this device and the wafer heater, and it is convenient to change, and is with low costs, realizes promotion and the cost reduction of IC yield from the face.

The foregoing examples are given for the purpose of illustrating the present invention in a clear and non-restrictive manner, and it will be apparent to those skilled in the art that variations and modifications of the present invention may be made in other variations and modifications based on the foregoing description, and it is not necessary or necessary to exhaustively enumerate all embodiments, and all such variations and modifications as are obvious and desirable in the art are within the scope of the present invention.

Claims

The protective device for PECVD wafer heating is arranged on the surface of a wafer heater (4); the method is characterized in that: the device comprises a protection device main body (1), wherein an anodic oxidation film is arranged on the upper surface of the protection device main body (1); the protection device main body (1) and the wafer heater (4) are connected and fixed through the fixing screws (2), the insulating covers (3) are arranged at the tops of the fixing screws (2), and the insulating covers (3) are connected with the outer ends of the fixing screws (2) in a matched mode.
2. The protective device for PECVD wafer heating as recited in claim 1, wherein: the protective device is characterized in that a wafer lifting thimble hole (1-1) is formed in the protective device main body (1), the wafer lifting thimble holes (1-1) are arranged on the same circumference and distributed in a triangular mode, a plurality of fixing holes (1-3) for installing fixing screws (2) are uniformly formed in the protective device main body (1) along the annular direction, and the fixing holes (1-3) are step through holes.
3. The protective device for PECVD wafer heating as recited in claim 1, wherein: the fixing screw (2) is arranged to be in a step shape matched with the fixing hole (1-3) and comprises a threaded part (2-2), a positioning part (2-3) and a hexagon socket screwing part (2-4) arranged on the fixing screw main body (2-1); one side of the screwing part (2-4) far away from the end surface is provided with a connecting threaded hole (2-5) for connecting the insulating cover; the connecting threaded hole (2-5) and the fixing screw (2) are coaxial.
4. The protective device for PECVD wafer heating as recited in claim 1, wherein: the insulating cover (3) comprises a cover body (3-1) and a convex step, the surface of the step is provided with a locking thread (3-2) matched with the connecting threaded hole, and the end face of the cover body (3-1) is symmetrically provided with screwing holes (3-3).
5. The protective device for PECVD wafer heating as recited in claim 1, wherein: the end face of the protection device main body (1) is provided with a wafer limiting groove (1-2).