CN216731039U - Chamfer grinding tool for processing T-shaped profile of edge of 8-inch silicon polished wafer - Google Patents
Chamfer grinding tool for processing T-shaped profile of edge of 8-inch silicon polished wafer Download PDFInfo
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- CN216731039U CN216731039U CN202123298154.8U CN202123298154U CN216731039U CN 216731039 U CN216731039 U CN 216731039U CN 202123298154 U CN202123298154 U CN 202123298154U CN 216731039 U CN216731039 U CN 216731039U
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Abstract
The utility model discloses a chamfer grinding tool for processing a T-shaped contour of an edge of an 8-inch silicon polished wafer. The tool comprises an aluminum base body, an assembling hole formed in the center of the aluminum base body, and a grinding area arranged on the periphery of the aluminum base body, wherein a plurality of T-shaped grinding grooves are embedded and carved in the grinding area, the inner diameters of the T-shaped grinding grooves are gradually reduced from a grinding groove opening to the top end, the whole tool is in an arc shape, and the arc shape is the same as the target shape of the chamfer angle of the silicon polishing sheet. The utility model can realize the accurate processing of the T-shaped profile of the edge of the 8-inch thin silicon polished wafer, and has high processing precision, good repeatability and higher efficiency.
Description
Technical Field
The utility model relates to a chamfering and grinding tool for processing a T-shaped contour of an edge of an 8-inch silicon polished wafer, and belongs to the technical field of edge contour processing of polished wafers.
Background
The development trend of semiconductor silicon materials is that the thickness of a silicon polished wafer is thinner and thinner, an 8-inch silicon polished wafer is a mainstream product in the domestic market at present, particularly, the cost of a single wafer of an 8-inch zone melting wafer (FZ) is very high, and the acceptable mechanical external force is greatly reduced in edge processing due to the thinness and the large size of the wafer. In order to reduce the processing loss and improve the processing efficiency, the existing T-shaped edge profile processing tool and the T-shaped edge profile processing method need to be improved and innovated.
The existing T-shaped edge profile chamfering tool is characterized in that the grinding groove is wide, so that two problems are caused: (1) the thickness of the polishing sheet edge profile chamfering tool is constant, and the grinding groove width causes a small number of grinding grooves capable of being accommodated in the tool; the grinding grooves are small in number and limited in service life, so that the total number of processed products of a single tool can be reduced, and the production and processing cost is raised. (2) The grinding groove is wide, the requirements on the precision and the stability of the edge contour machining equipment are higher, and the equipment maintenance and repair cost is further increased.
The existing T-shaped edge contour processing method has the characteristics that: (1) a complete T-edge profile requires multiple single-sided machining: the upper half side profile of the edge of the thin polishing sheet is firstly processed, and the lower half side profile of the edge of the thin polishing sheet is then processed, namely, a complete profile needs to be processed at least twice. For 8-inch thin polishing sheets, the edge profile processing is divided into at least two steps of rough processing and finish processing, which means that the T-shaped profile of one thin polishing sheet needs to be processed at least 4 times, and the efficiency is extremely low; (2) as described in the above (1), the single-side multi-processing method brings about the single-side stress on the edge of the polishing sheet, and the influence on the thicker edge of the polishing sheet can be ignored, but for the thin polishing sheet, the single-side stress brings about the great risk of cracking.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a chamfering and grinding tool for processing a T-shaped contour of an edge of an 8-inch silicon polished wafer, so that the production efficiency of processing the T-shaped contour of the edge of the thin polished wafer is effectively improved, and the risk of cracking of the T-shaped contour of the edge of the thin polished wafer is reduced.
In order to achieve the purpose, the utility model adopts the following technical scheme:
the utility model provides an 8 inch silicon polished wafer edge T type profile processing is with chamfer grinding frock, includes aluminium matter base member, sets up at the pilot hole of aluminium matter base member central point position, sets up the grinding district on aluminium matter base member periphery, has carved with a plurality of T type grinding grooves at this grinding district's inlay, the internal diameter in T type grinding groove diminishes from grinding notch to top gradually, wholly is the arc shape, and this arc shape is the same with the target shape of silicon polished wafer chamfer.
Preferably, the depth of the T-shaped grinding groove, i.e. the distance from the grinding notch to the top end of the inner peripheral surface, is 700-.
Preferably, the width sizes of the plurality of T-shaped grinding grooves are different, so that the T-shaped grinding grooves are suitable for chamfering the edges of the silicon polishing sheets with different thicknesses.
Preferably, the T-shaped grinding groove is a wear-resistant material layer formed by mixing artificial diamond and a metal bond.
Preferably, the mesh specifications of the inner peripheral surfaces of the plurality of T-shaped grinding grooves are different, and chamfering processing at different stages is applied.
Preferably, the width of the notch of the T-shaped grinding groove, namely the dimension in the thickness direction of the silicon polishing sheet, is 600-.
The utility model has the advantages that:
by adopting the chamfer grinding tool, the T-shaped contour machining efficiency of the edge of the thin polishing sheet is greatly improved, and the sheet cracking risk caused by machining the edge of the thin polishing sheet on one side is greatly reduced; according to the utility model, after the width of the grinding groove is reduced, a plurality of grinding grooves can be formed on the polishing sheet edge contour machining tool, the number of machining sheets of the tool is increased, the machining service life of a single T-shaped contour edge machining tool is prolonged, and the production cost is reduced.
The chamfer grinding tool can be used for molding the edge profile of the thin polishing sheet as once as possible without multiple processing, so that the efficiency is higher, and the productivity is greatly improved.
Drawings
Fig. 1 is a schematic structural view of the machining tool of the present invention.
Fig. 2 is a cross-sectional view taken along line a-a of fig. 1.
Fig. 3 is a schematic structural view of the grinding area in fig. 2.
Fig. 4 is a schematic structural view of the T-shaped grinding groove of the present invention.
FIG. 5 is a diagram showing the state of the edge of the silicon polishing pad in the grinding groove when the processing tool of the present invention is in use.
Fig. 6 is a schematic view of a conventional T-profile process.
Detailed Description
The utility model is described in detail below with reference to the drawings and examples, but the utility model is not limited to the scope of the utility model.
As shown in fig. 1 and 2, the chamfer grinding tool for processing the T-shaped contour of the edge of the 8-inch silicon polished wafer comprises an aluminum base body 1, a mounting hole 2 (a mounting reference surface 4 of the mounting hole is shown in the figure) formed in the center of the aluminum base body 1, and a grinding area 3 arranged on the periphery of the aluminum base body, wherein a plurality of T-shaped grinding grooves 5 are embedded in the grinding area 3. As shown in FIG. 3, the shape of the inner peripheral surface of the T-shaped grinding groove 5 is the same as the desired shape of the chamfer of the silicon polishing pad.
As shown in fig. 4, the inner peripheral surface of the T-shaped grinding groove 5 is curved as a whole, with the diameter gradually decreasing from the grinding notch to the distal end. The width W1 of the notch, namely the dimension of the notch along the thickness direction of the silicon polishing sheet to be processed, is 600-1200 mu m; taking the distance from the notch of the grinding groove to the top as the depth D of the T-shaped grinding groove, wherein D is 700-; the width W2 of the tip position is generally about 100 μm.
Through the design, the tool disclosed by the utility model can ensure the processing quality and greatly reduce the crack risk even if the tool is used for processing the T-shaped profile of the edge of the thin polished wafer with the thickness of 400-450 mu m.
In the utility model, the width sizes of the grinding grooves are different, so that the grinding groove is suitable for chamfering the edges of polishing sheets with different thicknesses. As the material of the grinding groove, a wear-resistant material in which synthetic diamond and a metal bond are mixed may be selected. In the plurality of grinding grooves, the mesh specifications of the inner peripheral surfaces of the respective grinding grooves are different, and chamfering in different stages can be applied, and for example, chamfering can be performed by selecting a grinding groove having an appropriate mesh according to actual needs.
FIG. 5 is a schematic diagram of a silicon polished wafer processed by the tool of the present invention, wherein the silicon polished wafer has a diameter of 8 inches and a thickness of 400 μm. Firstly, designing the shape of a grinding groove according to the T-shaped profile requirement of a silicon polishing sheet; then, the tool is installed on special equipment for chamfering the edge of the silicon polished section through the assembling hole, and the edge of the silicon polished section is inserted into the grinding groove and is in contact with the grinding groove; under the state, the silicon wafer rotates at a high speed (generally more than or equal to 2500RPM) to perform edge chamfering, and finally an ideal T-shaped edge profile is obtained.
FIG. 6 is a schematic diagram of a conventional T-shaped profile process, wherein the upper edge of the silicon polishing pad is first processed and then the lower edge of the silicon polishing pad is processed. The traditional T-shaped profile processing has the defects that: 1. the silicon polished wafer processed by the traditional method is stressed on one side, and particularly the silicon polished wafer is 8 inches thin, so that the risk of silicon wafer cracking is increased; 2. the processing efficiency is low due to the multi-time processing; 3. compared with the tool provided by the utility model, the tool provided by the utility model has the advantages that the number of grinding grooves can be reduced, the service life of the tool is greatly shortened, and the processing cost is increased.
In the practical production process, the actual effect and significance of the utility model in production are verified by comparing the two tools and the processing method. First, using the above conventional processing method, 500 sheets of 8-inch thin polishing sheets of the same sample number were processed, with 0.80% and 0.20% of sheet breakage loss, respectively, as shown in table 1 below. By adopting the improved tool, the splinter loss is obviously improved.
TABLE 1 lobe loss ratio comparison
Secondly, compared with the use cost of new and old tools, the number of finish machining grinding grooves of the original tool is 3, the number of finish machining grinding grooves of the tool is 6, the service life of the grinding grooves is fixed, the number of 8-inch thin polishing sheets which can be machined by one tool is doubled, the purchase price is unchanged, and the edge grinding cost is reduced by 50%, as shown in the following table 2.
TABLE 2 comparison of processing costs
Thirdly, comparing the new and old tool with the new and old edge chamfering method, as shown in table 3 below, the tool of the present invention has a significant improvement in the efficiency of machining 8-inch thin polishing sheets under the premise of the same machining speed and the same chamfering tool rotation speed.
TABLE 3 comparison of processing efficiency
In conclusion, the utility model changes the condition that the edge of the silicon wafer is stressed on one side during the traditional T-shaped outline edge processing by redesigning the T-shaped outline edge processing tool, and particularly greatly reduces the processing loss during processing of 8-inch thin silicon polished wafers. Under the condition of the same processing speed and the same rotating speed of the chamfering tool, the processing is finished twice before the improvement, and only once processing is needed after the improvement, so that the production efficiency is effectively optimized.
Claims (6)
1. The utility model provides an 8 inch silicon polished wafer edge T type profile processing is with chamfer grinding frock which characterized in that, includes aluminium matter base member, sets up pilot hole, the grinding district of setting on aluminium matter base member periphery in aluminium matter base member central point, has carved with a plurality of T type grinding grooves at this grinding district's inlay, the internal diameter in T type grinding groove diminishes from grinding notch to top gradually, wholly is the arc shape, and this arc shape is the same with the target shape of silicon polished wafer chamfer.
2. The chamfer grinding tool for T-shaped profile machining of the edge of an 8-inch silicon polishing pad as claimed in claim 1, wherein the depth of the T-shaped grinding groove, i.e. the distance from the grinding notch to the top end of the inner peripheral surface, is 700-.
3. The chamfer grinding tool for T-shaped contour machining of the edge of an 8-inch silicon polishing pad according to claim 1, wherein the width dimension of the plurality of T-shaped grinding grooves is different, so that the chamfer grinding tool is suitable for chamfering the edge of the silicon polishing pad with different thicknesses.
4. The chamfer grinding tool for machining the T-shaped profile of the edge of the 8-inch silicon polished wafer according to claim 1, wherein the T-shaped grinding groove is a wear-resistant material layer formed by mixing artificial diamond and a metal bond.
5. The chamfer grinding tool for T-shaped contour machining of the edge of an 8-inch silicon polished wafer according to claim 4, wherein the mesh number specifications of the inner peripheral surfaces of the T-shaped grinding grooves are different, and chamfer machining at different stages is applied.
6. The chamfer grinding tool for T-shaped profile machining of the edge of an 8-inch silicon polishing pad as claimed in claim 1, wherein the width of the notch of the T-shaped grinding groove, i.e. the dimension in the thickness direction of the silicon polishing pad, is 1200 μm, and is suitable for T-shaped profile machining of the edge of a thin polishing pad with the thickness of 400-450 μm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123298154.8U CN216731039U (en) | 2021-12-24 | 2021-12-24 | Chamfer grinding tool for processing T-shaped profile of edge of 8-inch silicon polished wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202123298154.8U CN216731039U (en) | 2021-12-24 | 2021-12-24 | Chamfer grinding tool for processing T-shaped profile of edge of 8-inch silicon polished wafer |
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| CN216731039U true CN216731039U (en) | 2022-06-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114260784A (en) * | 2021-12-24 | 2022-04-01 | 山东有研半导体材料有限公司 | Chamfering and grinding tool and method for processing T-shaped profile of edge of 8-inch silicon polished wafer |
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2021
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114260784A (en) * | 2021-12-24 | 2022-04-01 | 山东有研半导体材料有限公司 | Chamfering and grinding tool and method for processing T-shaped profile of edge of 8-inch silicon polished wafer |
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