CN213484180U - Semiconductor laser device - Google Patents

Abstract

The application discloses semiconductor laser relates to laser equipment's technical field. The semiconductor laser comprises a cooling outer box and a light-emitting component, wherein the cooling outer box is provided with an inner cavity, and an inlet and an outlet which are communicated with the inner cavity; the luminous piece is arranged in the inner cavity, at least one cooling channel penetrating through the luminous piece is arranged on the luminous piece, and two ends of the cooling channel are communicated with the inner cavity. This application can be through at the light-emitting component peripheral hardware cooling outer box, directly set up cooling channel on the light-emitting component, improves the heat-sinking capability of light-emitting component to can improve semiconductor laser's power, can improve semiconductor laser's stability and long-term reliability again.

Description

Semiconductor laser device

Technical Field

The application relates to the technical field of laser equipment, in particular to a semiconductor laser.

Background

The laser is a device capable of emitting laser, wherein, the semiconductor laser is also called laser diode, which is a laser using semiconductor material as working substance, and it has small volume, long service life, practicality and most extensive application.

The key direction of laser development is to improve the power of a semiconductor laser, which generally starts from two aspects, firstly, the performance of a chip can be directly improved to improve the power of the semiconductor laser, and secondly, the thermal resistance can be reduced in the packaging process of the semiconductor laser, the heat dissipation capability is improved, and the power of the semiconductor laser is improved. Therefore, it is very critical how to improve the heat dissipation capability of the heat sink under the condition of the same chip performance.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing a semiconductor laser, it can be through at the light emitting component peripheral hardware cooling outer box, directly set up cooling channel on the light emitting component, improves the heat-sinking capability of light emitting component.

In order to achieve the above object, the embodiments of the present application are implemented as follows:

a semiconductor laser includes: the cooling outer box is provided with an inner cavity, and an inlet and an outlet which are communicated with the inner cavity; the luminous piece is arranged on the cooling outer box, at least one cooling channel penetrating through the luminous piece is arranged on the luminous piece, and two ends of the cooling channel are communicated with the inner cavity.

In one embodiment, the light emitting member includes: the heat sink comprises a heat sink array, a chip array and at least two extraction electrodes, wherein the heat sink array comprises a plurality of chip heat sinks, and the plurality of chip heat sinks are distributed in a linear array along a first direction; the chip array comprises a plurality of laser chips which are distributed in a linear array along the first direction and clamped between two adjacent chip heat sinks; the plurality of extraction electrodes are respectively arranged at two ends of the heat sink array along the first direction.

In one embodiment, the two opposite surfaces of the cooling outer box are respectively provided with a first mounting hole and a second mounting hole for fixing the luminous element; two ends of the extraction electrode respectively penetrate through the first mounting hole and the second mounting hole and are exposed out of the cooling outer box; the heat sink array penetrates through the second mounting hole and is exposed out of the cooling outer box, and the chip array is arranged outside the cooling outer box.

In one embodiment, the number of the cooling channels is multiple; the plurality of cooling channels are all straight hole channels, and the straight hole channels penetrate through the heat sink array and the extraction electrode along the first direction.

In an embodiment, each of the laser chips is smaller than each of the chip heat sinks, and the light emitting device further includes: the insulating plate array comprises a plurality of insulating plates which are distributed in a linear array along the first direction and clamped between two adjacent chip heat sinks; wherein, each insulating plate and corresponding laser chip leave the interval between them.

In one embodiment, the number of the cooling channels is multiple; the plurality of cooling channels comprises at least one straight hole channel and at least one staggered hole channel; the straight hole channel penetrates through the heat sink array, the insulating plate array and the extraction electrode along the first direction; the staggered hole channel comprises a first drainage hole arranged on the extraction electrode, a second drainage hole arranged on the insulating plate and a third drainage hole arranged on the chip heat sink; and third drainage holes of two adjacent chip heat sinks are arranged in a staggered manner along the length direction of the second drainage holes.

In one embodiment, the cooling outer box is connected with a first sealed transparent cover and a second sealed transparent cover on two opposite surfaces respectively; the first sealed transparent cover is arranged on the leading-out electrode, and the second sealed transparent cover is arranged on the heat sink array.

In one embodiment, the outer cooling box includes a box body and a cover plate connected to each other, the second mounting hole is formed in the cover plate, and the first mounting hole is formed in the box body.

In an embodiment, a length of the inner cavity along the first direction is greater than a length of the light emitting element, and gaps are left in the inner cavity at two ends of the light emitting element along the first direction to form a buffer space.

In one embodiment, the axis of the inlet and the axis of the outlet are located on the same straight line, and the axis of the inlet and the first direction are arranged in the same direction.

In one embodiment, the inlet is connected with an inlet pipe, and the outlet is connected with an outlet pipe.

Compared with the prior art, the beneficial effect of this application is:

this application can be through at the illuminating part peripheral hardware cooling outer container, directly set up cooling channel and directly adopt the coolant cooling on the illuminating part, and adopt parallel refrigeration scouring water passageway, the heat sink direct contact of chip of laser chip and positive negative pole, improve the heat-sinking capability of illuminating part, the structure adopts the box formula structure setting of integrating, make it small, simple structure and the luminous power density of output can reach hundreds of thousands of kilowatts, thereby can improve semiconductor laser's power, can improve semiconductor laser's stability and long-term reliability again.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.

Fig. 1 is a schematic structural diagram of a semiconductor laser according to an embodiment of the present application.

Fig. 2 is an exploded view of a semiconductor laser according to an embodiment of the present application.

Fig. 3 is a front view of a semiconductor laser according to an embodiment of the present application.

Fig. 4 is an enlarged view of section E of fig. 3 of the present application.

Fig. 5 is a plan view of a semiconductor laser according to an embodiment of the present application.

Fig. 6 is a sectional view taken along the line a-a of fig. 5 of the present application.

Fig. 7 is a sectional view taken along line B-B of fig. 5 of the present application.

Fig. 8 is an exploded view of a glowing member according to one embodiment of the present application.

Fig. 9 is an exploded view of a glowing member according to an embodiment of the present application.

Fig. 10 is a right side view of a semiconductor laser according to an embodiment of the present application.

Fig. 11 is a left side view of a semiconductor laser according to an embodiment of the present application.

In fig. 7, solid arrows indicate the flow direction of the cooling medium.

Icon: 100-a semiconductor laser; 200-cooling the outer box; 210-lumen; 211-buffer space; 220-inlet; 221-inlet pipe; 230-an outlet; 231-an outlet pipe; 240-box body; 241-a first mounting hole; 242-first sealed through cover; 250-a cover plate; 251-a second mounting hole; 252-a second sealed through cover; 300-a light emitting member; 310-an array of heat sinks; 311-chip heat sink; 312-boss; 313-heat dissipation voids; 320-chip array; 321-a laser chip; 330-extraction electrode; 340-an array of insulating panels; 341-an insulating plate; 400-cooling channels; 410-staggered pore channels; 411-a first drainage aperture; 412-a second drainage aperture; 413-a third drainage aperture; 420-straight bore channel; 421-a fourth drainage aperture; 422-fifth drainage aperture; 423-sixth drainage holes.

Detailed Description

The terms "first," "second," "third," and the like are used for descriptive purposes only and not for purposes of indicating or implying relative importance, and do not denote any order or order.

Furthermore, the terms "horizontal", "vertical", "overhang" and the like do not imply that the components are required to be absolutely horizontal or overhang, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.

In the description of the present application, it should be noted that the terms "inside", "outside", "left", "right", "upper", "lower", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships that are conventionally arranged when products of the application are used, and are used only for convenience in describing the application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the application.

In the description of the present application, unless expressly stated or limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements.

The technical solution of the present application will be clearly and completely described below with reference to the accompanying drawings.

Fig. 1 is a schematic structural diagram of a semiconductor laser 100 according to an embodiment of the present disclosure. A semiconductor laser 100 comprises a cooling outer box 200 and a light emitting element 300, wherein the cooling outer box 200 is provided with an inner cavity 210 (refer to FIG. 2) and an inlet 220 and an outlet 230 which are communicated with the inner cavity 210; an inlet pipe 221 is detachably connected to the inlet 220 by means of bolts or the like, and an outlet pipe 231 is detachably connected to the outlet 230 by means of bolts or the like.

The luminous member 300 is disposed in the cooling outer case 200, and the whole or a part of the luminous member 300 is disposed in the inner cavity 210. At least one cooling channel 400 (refer to fig. 2) is disposed on the light emitting member 300 and penetrates through the light emitting member 300, and both ends of the cooling channel 400 are communicated with the inner cavity 210. Wherein the cooling channel 400 may extend through the luminous element 300 in a straight line or in a curved line. In one embodiment, the cooling channel 400 may be a parallel refrigeration flush water channel.

In an operation process, a cooling medium such as a cooling liquid or a cooling gas is introduced into the inner cavity 210 through the inlet pipe 221 and the inlet 220, the cooling medium introduced into the inner cavity 210 passes through the light emitting member 300 through the cooling channel 400 of the light emitting member 300, so that the cooling medium directly radiates heat to the light emitting member 300, and the cooling medium passing through the cooling channel 400 finally flows out of the cooling outer box 200 from the outlet pipe 231 and the outlet 230.

Therefore, in the present embodiment, the cooling channel 400 is directly formed on the light emitting device 300 by arranging the box-type structure of the cooling outer box 200 outside the light emitting device 300, and the cooling medium such as the cooling liquid or the cooling gas is directly used for cooling, and the cooling medium is in direct contact with the light emitting device 300, so that the heat dissipation capability of the light emitting device 300 is improved, and thus the power of the semiconductor laser 100 can be improved, and the stability and long-term reliability of the semiconductor laser 100 can be improved. And the structure of the embodiment is simple and unique, the volume is small after integration, and the output optical power density can reach hundreds of thousands of kilowatts.

The axis of the inlet 220 and the axis of the outlet 230 are positioned on the same straight line, the inlet 220 is positioned above the outlet 230, the axis of the inlet 220 is a first direction, which represents the vertical direction, and the Z direction, the longitudinal direction of the luminous member 300 is a second direction, which represents the horizontal direction, and the X direction, the width direction of the luminous member 300 is a third direction, which represents the front and rear directions, and the Y direction, and the first direction, the second direction, and the third direction are perpendicular to each other.

Fig. 2 is an exploded view of a semiconductor laser 100 according to an embodiment of the present disclosure. The light emitting member 300 includes a heat sink array 310, a chip array 320, and at least two extraction electrodes 330, the heat sink array 310 includes a plurality of chip heat sinks 311, the plurality of chip heat sinks 311 are arranged in a linear array along a first direction; the chip array 320 includes a plurality of laser chips 321, the plurality of laser chips 321 are distributed in a linear array along a first direction and are sandwiched between two adjacent chip heat sinks 311; the plurality of extraction electrodes 330 are respectively provided at both ends of the heat sink array 310 in the first direction (upper and lower ends in the Z direction).

The cooling outer box 200 is provided with a first mounting hole 241 and a second mounting hole 251 on two opposite surfaces (left and right side surfaces along the X direction), respectively; the light emitting member 300 is fixed to the cooling outer case 200 through the first mounting hole 241 and the second mounting hole 251. The light emitting member 300 is partially disposed in the inner cavity 210 and partially exposed from the outer cooling box 200. Both ends of the extraction electrode 330 respectively pass through the first mounting hole 241 and the second mounting hole 251 to be exposed out of the cooling outer box 200; the heat sink array 310 is exposed out of the cooling outer box 200 through the second mounting hole 251, and the chip array 320 is disposed outside the cooling outer box 200. In this embodiment, to facilitate the installation of the light emitting member 300, the cooling outer box 200 includes a box body 240 and a cover plate 250 connected to each other by bolts, welding, etc., the second installation hole 251 is disposed on the cover plate 250, and the first installation hole 241 is disposed on the box body 240.

The light emitting member 300 further includes an insulating plate array 340, the insulating plate array 340 includes a plurality of insulating plates 341, and the plurality of insulating plates 341 are distributed in a linear array along the first direction and are sandwiched between two adjacent chip heat sinks 311. Since the size of each laser chip 321 is smaller than the size of each chip heat sink 311, the width of the laser chip 321 along the Y direction is smaller than the minimum width of the chip heat sink 311 along the Y direction, and the length of the laser chip 321 along the X direction is smaller than the length of the chip heat sink 311 along the X direction in this embodiment, the insulating plate 341 is additionally arranged between two adjacent chip heat sinks 311 in this embodiment, so that the supporting effect can be achieved, and the structural stability of the light emitting element 300 is improved.

A space is left between each insulating plate 341 and the corresponding laser chip 321. The chip array 320 and the insulating board array 340 are respectively located at the left and right ends of the heat sink array 310 along the X direction, so as to avoid the mutual influence between the chip array 320 and the insulating board array 340. In this embodiment, the chip heat sink 311 disposed outside the cooling outer box 200 has a trapezoidal cross section along the X direction.

A first sealed transparent cover 242 and a second sealed transparent cover 252 are respectively connected to the left side surface and the right side surface of the cooling outer box 200 along the X direction through bolts and the like; the first sealed transparent cover 242 is disposed on the extraction electrode 330 and adjacent to the case 240, and the second sealed transparent cover 252 is disposed on the heat sink array 310 and adjacent to the cover plate 250. The first and second sealing transparent covers 242 and 252 are used for sealing to prevent the cooling medium such as cooling liquid or cooling gas from flowing out, wherein, in order to improve the sealing effect, sealing members such as rubber sealing rings may be disposed between the first sealing transparent cover 242 and the cooling outer box 200 and between the second sealing transparent cover 252 and the cooling outer box 200.

The chip heat sink 311 may be made of metal, ceramic, or the like. The insulating plate 341 may be made of a material such as FPC (glass fiber).

Fig. 3 is a front view of a semiconductor laser 100 according to an embodiment of the present application. Please refer to fig. 4, which is an enlarged view of a portion a of fig. 3. Since the size of each laser chip 321 is smaller than that of each chip heat sink 311, and a space is left between each insulating plate 341 (see fig. 2) and the corresponding laser chip 321, a heat dissipation gap 313 may be formed between two adjacent chip heat sinks 311. And because the chip array 320 is arranged outside the cooling outer box 200, the heat dissipation gap 313 is also partially arranged outside the cooling outer box 200, so that external air can pass through, and the heat dissipation effect of the heat sink is improved.

In this embodiment, in order to increase the size of the heat dissipation gap 313 and better fix the laser chip 321, a boss 312 matched with the laser chip 321 is convexly disposed on the lower surface of the chip heat sink 311. The cross-sectional dimension of the boss 312 in the Y direction is equal to the cross-sectional dimension of the laser chip 321 in the Y direction.

In this embodiment, a protrusion matching with the insulating plate 341 may not be disposed on the lower surface of the chip heat sink 311, so that the thickness of the insulating plate 341 is greater than that of the laser chip 321, and thus the manufacturing cost may be saved.

Fig. 5 is a top view of a semiconductor laser 100 according to an embodiment of the present disclosure. Please refer to fig. 6, which is a sectional view taken along the direction a-a of fig. 5. The length of the inner cavity 210 in the first direction is greater than that of the light emitting member 300, and the inner cavity 210 has a gap at both ends of the light emitting member 300 in the first direction to form a buffer space 211.

The buffer space 211 can reduce the flow rate of cooling medium such as cooling liquid or cooling gas, so that the cooling medium can cool the light emitting element 300 through the cooling channel 400, and the cooling time can be prolonged.

Please refer to fig. 7, which is a sectional view taken along the direction B-B of fig. 5. The cooling passage 400 is provided in plurality; the plurality of cooling channels 400 includes at least one straight bore channel 420 and at least one staggered bore channel 410; the straight-hole channel 420 penetrates the heat sink array 310, the insulating plate array 340, and the lead-out electrode 330 in the first direction (Z direction); the cross-section of the cross-hole channel 410 along the Z-direction is curved or dog-leg.

In this embodiment, the cooling channel 400 includes a straight channel 420 and a staggered channel 410, wherein the cooling medium has a shorter flow path and a faster flow rate in the straight channel 420, and the cooling medium has a longer flow path, a slower flow rate and a longer flow time in the staggered channel 410, so that the cooling effect of the light emitting element 300 is better.

Fig. 8 is an exploded view of a light emitting device 300 according to an embodiment of the present disclosure. The staggered hole channel 410 comprises a first drainage hole 411 arranged on the extraction electrode 330, a second drainage hole 412 arranged on the insulating plate 341 and a third drainage hole 413 arranged on the chip heat sink 311; the third drainage holes 413 of two adjacent chip heat sinks 311 are staggered along the length direction of the second drainage holes 412. In this embodiment, the length direction of the second drainage holes 412 is along the X direction, and in another embodiment, the length direction of the second drainage holes 412 may be along the Y direction or may be inclined.

In this embodiment, the first drainage hole 411 on the extraction electrode 330 is 4 bar-shaped holes, the second drainage hole 412 on the insulating plate 341 is 4 special-shaped holes, and the third drainage hole 413 on the chip heat sink 311 is 4 bar-shaped holes.

In this embodiment, in the chip heat sink 311 above the two adjacent chip heat sinks 311, the two third drainage holes 413 on the left side are arranged close to the right, and the two third drainage holes 413 on the right side are arranged close to the left; in the chip heat sink 311 located below, the two third flow guiding holes 413 on the left are arranged close to the left, and the two third flow guiding holes 413 on the right are arranged close to the right.

In this embodiment, the second drainage holes 412 are long special-shaped holes, and in two adjacent insulating plates 341 and the insulating plate 341 above, the left two second drainage holes 412 are larger at the left end and smaller at the right end, and the right two second drainage holes 412 are smaller at the left end and larger at the right end; in the insulating plate 341 located below, the two second drainage holes 412 on the left side are smaller at the left end and larger at the right end, and the two second drainage holes 412 on the right side are larger at the left end and smaller at the right end.

In an operation process, when the cooling medium passes through the staggered hole channel 410, the cooling medium reaches the first chip heat sink 311 after passing through the first flow guiding hole 411 on the leading-out electrode 330 located above, because the third flow guiding holes 413 of two adjacent chip heat sinks 311 are staggered along the length direction of the second flow guiding hole 412, the cooling medium inevitably flows to the surface of the next chip heat sink 311 directly after passing through the third flow guiding hole 413 of the first chip heat sink 311 and the second flow guiding hole 412 on one insulating plate 341, and continuously flows through the third flow guiding hole 413 of the second chip heat sink 311, so that the contact area between the cooling medium and the chip heat sink 311 can be increased, the contact time between the cooling medium and the chip heat sink 311 is prolonged, and the cooling effect of the semiconductor laser 100 is improved.

The straight hole channel 420 includes a fourth drainage hole 421 disposed on the extraction electrode 330, a fifth drainage hole 422 disposed on the insulating plate 341, and a sixth drainage hole 423 disposed on the chip heat sink 311. In this embodiment, the fourth drainage holes 421 on the extraction electrode 330 are 5 circular step holes, the sixth drainage holes 423 on the chip heat sink 311 are 5 cylindrical holes, and the fifth drainage holes 422 on the insulating plate 341 are 4 cylindrical holes. One of the sixth drainage holes 423 is disposed at the heat dissipation gap 313 (see fig. 4).

First drainage holes 411, second drainage holes 412, third drainage holes 413, fourth drainage holes 421, fifth drainage holes 422, and sixth drainage holes 423 may be circular through holes, square through holes, or other irregularly shaped holes.

Fig. 9 is an exploded view of a light emitting device 300 according to an embodiment of the present disclosure. In this embodiment, the light emitting member 300 is not provided with the insulating plate 341, and the plurality of cooling channels 400 are provided; the plurality of cooling channels 400 are all straight-hole channels 420, and the straight-hole channels 420 penetrate through the heat sink array 310 and the extraction electrode 330 in the first direction. The straight hole channel 420 includes a fourth flow-guiding hole 421 provided on the extraction electrode 330 and a sixth flow-guiding hole 423 provided on the chip heat sink 311. In this embodiment, there are 9 fourth drainage holes 421 on the extraction electrode 330, and 9 sixth drainage holes 423 on the chip heat sink 311. The sixth and fourth flow guide holes 423 and 421 may be circular through holes, square through holes, or other irregularly shaped holes.

Fig. 10 is a right side view of a semiconductor laser 100 according to an embodiment of the present application. The number of the extraction electrodes 330 is two, the two extraction electrodes 330 are parallel to each other, and the two extraction electrodes 330 have the same size and dimension. The upper extraction electrode 330 is a negative electrode, and the lower extraction electrode 330 is a positive electrode.

The cross-sectional area of the first through-sealed cover 242 in the Z-direction is smaller than the cross-sectional area of the cooling outer box 200 in the Z-direction. The first hermetically sealed transparent cover 242 may be connected to the case 240 of the cooling outer case 200 by 7 bolts.

Fig. 11 is a left side view of a semiconductor laser 100 according to an embodiment of the present application. The cross-sectional area of the second through-seal cover 252 in the Z-direction is smaller than the cross-sectional area of the cooling outer box 200 in the Z-direction. The second hermetically sealed transparent cover 252 may be connected to the cover plate 250 of the cooling outer box 200 by 4 bolts. The cover plate 250 may be coupled to the case 240 (see fig. 10) by 4 bolts.

It should be noted that the features of the embodiments in the present application may be combined with each other without conflict.

The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (10)

1. A semiconductor laser, comprising:

a cooling outer box having an inner cavity and an inlet and an outlet communicating with the inner cavity; and

the luminous piece is arranged on the cooling outer box, at least one cooling channel penetrating through the luminous piece is arranged on the luminous piece, and two ends of the cooling channel are communicated with the inner cavity.

2. A semiconductor laser as claimed in claim 1 wherein the light emitting element comprises:

the heat sink array comprises a plurality of chip heat sinks, and the plurality of chip heat sinks are distributed in a linear array along a first direction;

the chip array comprises a plurality of laser chips, the laser chips are distributed in a linear array along the first direction and are clamped between two adjacent chip heat sinks; and

and the at least two extraction electrodes are respectively arranged at two ends of the heat sink array along the first direction.

3. The semiconductor laser according to claim 2, wherein the cooling outer box has a first mounting hole and a second mounting hole for fixing the light emitting element on two opposite surfaces;

two ends of the extraction electrode respectively penetrate through the first mounting hole and the second mounting hole and are exposed out of the cooling outer box;

the heat sink array penetrates through the second mounting hole and is exposed out of the cooling outer box, and the chip array is arranged outside the cooling outer box.

4. A semiconductor laser as claimed in claim 2 wherein the cooling channel is provided in plurality;

the plurality of cooling channels are all straight hole channels, and the straight hole channels penetrate through the heat sink array and the extraction electrode along the first direction.

5. A semiconductor laser as claimed in claim 2 wherein each of the laser chips is smaller than each of the chip heat sinks, the light emitting element further comprising:

the insulating plate array comprises a plurality of insulating plates which are distributed in a linear array along the first direction and clamped between two adjacent chip heat sinks;

wherein, each insulating plate and corresponding laser chip leave the interval between them.

6. The semiconductor laser of claim 5, wherein the cooling channel is provided in plurality;

the plurality of cooling channels comprises at least one straight hole channel and at least one staggered hole channel;

the straight hole channel penetrates through the heat sink array, the insulating plate array and the extraction electrode along the first direction;

the staggered hole channel comprises a first drainage hole arranged on the extraction electrode, a second drainage hole arranged on the insulating plate and a third drainage hole arranged on the chip heat sink;

and third drainage holes of two adjacent chip heat sinks are arranged in a staggered manner along the length direction of the second drainage holes.

7. The semiconductor laser according to any one of claims 3 to 6, wherein a first hermetically sealed transparent cover and a second hermetically sealed transparent cover are respectively connected to two opposite faces of the cooling outer box;

the first sealed transparent cover is arranged on the leading-out electrode, and the second sealed transparent cover is arranged on the heat sink array.

8. The semiconductor laser of claim 7, wherein a length of the inner cavity along the first direction is greater than a length of the light emitting element,

gaps are reserved at two ends of the inner cavity of the luminous piece along the first direction to form a buffer space.

9. A semiconductor laser as claimed in claim 2 wherein the axis of the inlet and the axis of the outlet are co-linear and the axis of the inlet is co-directional with the first direction.

10. A semiconductor laser as claimed in claim 1 wherein an inlet tube is connected to the inlet and an outlet tube is connected to the outlet.

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