CN213424978U - Pressure clamp for silicon rectifier element - Google Patents
Pressure clamp for silicon rectifier element Download PDFInfo
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- CN213424978U CN213424978U CN202022561664.9U CN202022561664U CN213424978U CN 213424978 U CN213424978 U CN 213424978U CN 202022561664 U CN202022561664 U CN 202022561664U CN 213424978 U CN213424978 U CN 213424978U
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Abstract
The utility model provides a silicon pressure anchor clamps for rectifier cell, includes 1 leaf spring clamp plate, 1 horizontal pressure board, 1 pressure supporting shoe, 2 briquetting annexs, horizontal pressure board is equipped with the boss with heat dissipation potsherd and silicon rectifier cell contact surface one side, and horizontal pressure board's opposite side is equipped with the arc back of the body, boss length is 72mm, the width is 80mm, highly is 4mm, the thickness of horizontal pressure board is 59 mm. The clamp can reduce the pressure acting on devices such as heat dissipation ceramic parts and the like in the press-fitting unit, and meet the requirements of high voltage, high current, high heat conduction, high insulation, high reliability and miniaturization of a silicon rectifying device. The radial pressure born by each surface of each device in the silicon element crimping unit is balanced, and the damage of the devices in the crimping unit caused by the uneven local pressure of the clamp is avoided.
Description
Technical Field
The utility model relates to a silicon pressure anchor clamps for rectifier cell generally uses with high-power semiconductor device (diode or thyristor etc.) is supporting, can be applied to occasions such as power electronics frequency conversion, rectifier circuit, inverter circuit, contactless switch and use.
Background
In the 21 st century, power electronics are applied to various industries such as new energy, direct-current extra-high voltage power transmission and transformation, unmanned driving and the like. The high-power silicon rectifier element is one of power electronic core devices and is widely applied to strategic industries such as rail transit, aerospace, wind power generation, national defense industry and the like. In particular, in the military industrial fields of maglev trains, vehicles, ships, air-space launching and the like, higher requirements are put forward on the rectifier, including high voltage, large current, high reliability, strong environmental adaptability, high heat conduction, high insulation, small volume and the like.
The traditional rectifying device mainly has two heat dissipation modes during the working process of a silicon element: namely air cooling and water cooling, wherein the air cooling is to connect the radiator and the silicon element in a single-sided or double-sided contact manner and carry out natural or forced convection cooling through air. In the water cooling, the radiator and the connecting row are in double-sided contact connection with the silicon element, and heat exchange is carried out with a refrigerant through circulation of a pure water cooler. The cooling mode is only suitable for the situation that the rectified voltage is less than or equal to 2000 VDC.
With the more and more extensive application of silicon rectifier elements, in the application field of some special converter devices, the requirements of the device are high input voltage level (the bus voltage reaches 20 KVDC), large output current (the single-phase alternating current output current reaches 15 KA), high heat conduction and heat dissipation, high insulation resistance, small size and the like. In order to meet the conditions, the power level of the type-selection silicon rectifier element is increased, the volume of the element is increased, the heat dissipation mode of the traditional rectifier device cannot meet the requirements more and more, and a heat dissipation and insulation device capable of meeting the special conditions needs to be found.
At present, a large-size high-heat-conductivity ceramic part is generally adopted in domestic and international high-end application fields as an insulating heat dissipation plate, the ceramic part is divided into two types, one type is beryllium oxide ceramic, the other type is aluminum nitride ceramic, and the two types of ceramic have advantages and disadvantages. The thermal conductivity coefficient of the beryllium oxide is superior to that of aluminum nitride, and the beryllium oxide has certain toxicity and relatively few application in the industry; the strength of the aluminum nitride is superior to that of beryllium oxide, the theoretical thermal conductivity reaches 320W/m.K, and generally, the selected aluminum nitride is widely applied as a medium.
The aluminum nitride ceramic has high insulation and high heat conduction characteristics, and can meet the requirements of special working conditions. However, the whole silicon component press-mounting unit has two fatal defects: 1. because the radiator is made of ceramic, the ceramic has the inherent characteristic of low strength, and the compression joint is easy to break if the compression joint is stressed unevenly; 2. as the size of the silicon rectifier element increases, the mounting force Fm will become larger and larger, with 7 inch silicon element mounting forces even approaching 200KN, and the risk of breakage for the tile is very high for such large mounting forces Fm.
The silicon rectifier element normally works and must meet the requirement of installation force Fm, the installation force of rectifier elements with different sizes is different, the larger the element size is, the larger the borne installation force is, and the installation force Fm of the 7-inch silicon rectifier element at home and abroad is close to 200KN at present. With the increasing installation pressure, the risk of breakage of the ceramic parts installed in the rectification unit also increases.
The conventional mounting jig for a silicon rectifier element includes: the aluminum nitride ceramic plate continuous wire-outgoing device comprises a plate spring pressing plate, a horizontal pressing plate, a pressure supporting block and 2 pressing block accessories, wherein through relevant pressure tests, the thickness of a ceramic radiating piece is 14mm, the diameter of the ceramic radiating piece is 130mm, the flatness of each pressing surface is 0.02mm, the size of a pressure contact surface is 50mm multiplied by 72mm, 90KN pressure is applied to a clamp, and through high-low temperature lifting cyclic tests, the aluminum nitride ceramic plate continuously outgoing line cracks or breaks. There are two reasons for analyzing the breakage of the ceramic chip: 1. the strength of the ceramic chip is not enough; 2. the pressure intensity on the pressure connection surface of the ceramic chip is uneven.
During the development and use of the ceramic radiating fin, the pressure resistance of the ceramic chip is not removed all the time, the ceramic chip is damaged when the pressure exceeds 90KN often, and the problem of the ceramic chip damage is not solved all the time. After a large number of tests and expert groups for attack and customs, the appearance of the horizontal pressing plate of the silicon rectifying and crimping unit is finally found to be a direct cause of ceramic chip damage. The original pressure clamp has the defects that the stress on a compression joint surface is uneven, the stress in the middle of the front surface and the back surface of the ceramic chip is large, and the stress on the periphery is small, so that the ceramic chip is damaged.
SUMMERY OF THE UTILITY MODEL
The utility model discloses its aim at provides a pressure anchor clamps for silicon rectifier element, this anchor clamps can reduce the pressure that acts on devices such as heat dissipation ceramic parts in the pressure equipment unit, realize the demand of high voltage, heavy current, high heat conduction, high insulation, high reliability, miniaturization such as silicon fairing. The radial pressure born by each surface of each device in the silicon element crimping unit is balanced, and the damage of the devices in the crimping unit caused by the uneven local pressure of the clamp is avoided.
The technical scheme adopted for achieving the purpose is that the pressure clamp for the silicon rectifying element comprises 1 leaf spring pressure plate, 1 horizontal pressure plate, 1 pressure supporting block and 2 pressure block accessories, wherein a boss is arranged on one side of the contact surface of the horizontal pressure plate, a heat dissipation ceramic plate and the silicon rectifying element, an arc-shaped back is arranged on the other side of the horizontal pressure plate, the length of the boss is 72mm, the width of the boss is 80mm, the height of the boss is 4mm, and the thickness of the horizontal pressure plate is 59 mm.
Advantageous effects
Compared with the prior art, the utility model has the following advantages.
1) The horizontal pressing plate is made of high-quality EN-AW-6082T6 aluminum alloy, can bear 180KN pressure for a long time, the deformation amount is controlled to be less than or equal to 1mm, the deformation coefficient is linear and stable, the clamp resists high and low temperatures and has small deformation coefficient, and the product manufacturing process is stable;
2) increasing the width of a compression joint surface of a horizontal pressing plate, increasing the contact area of a pressure-bearing surface, increasing the pressure-bearing area and reducing the pressure of the pressure-bearing surface of the ceramic chip under the condition that the pressure of the connection surface of the silicon rectifying element is unchanged according to the pressure intensity = pressure ÷ force/force area;
3) the width of the horizontal pressing plate is increased, the strength of the whole pressure clamp is improved, and the influence of the deformation of the pressure clamp after being pressed on the ceramic chip is reduced;
4) the back of the pressure clamp is changed into an arc line shape, so that the bending strength of the whole pressure clamp is improved, and the influence of the deformation of the pressure plate on the ceramic chip after the pressure clamp is stressed is reduced;
drawings
The present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic view of the appearance and installation of the present invention 1;
FIG. 2 is a schematic view of the appearance and installation of the present invention;
fig. 3 is a structural view 1 of a horizontal pressing plate in the present invention;
fig. 4 is a structural view 2 of the horizontal pressing plate of the present invention.
Detailed Description
The utility model provides a silicon pressure anchor clamps for rectifier cell, includes 1 leaf spring clamp plate 1, 1 horizontal press plate 2, 1 pressure supporting shoe 3, 2 briquetting annexs 4, as shown in fig. 2-4, horizontal press plate 2 is equipped with boss 5 with heat dissipation potsherd and silicon rectifier cell contact surface one side, and the opposite side of horizontal press plate 2 is equipped with arc back 6, boss 5 length is 72mm, the width is 80mm, highly is 4mm, the thickness of horizontal press plate 2 is 59 mm.
The horizontal pressing plate 2 is EN-AW-6082T6 aluminum alloy.
The conventional mounting fixture for the silicon rectifier element cannot meet the requirements of special working conditions. Aiming at the actual situation of a project, the design is improved as follows: redesigning and manufacturing the horizontal pressing plate, changing the size of a pressure contact surface of the horizontal pressing plate from 50mm multiplied by 72mm to 80mm multiplied by 72mm, changing the width of an original clamp from 50mm to 80mm, and changing the back of the clamp to an arc design. The improved clamp is evaluated by a pressure equalization test, and the pressure equalization degree is obviously improved compared with the prior art. Under the same installation condition, through high and low temperature lifting cycle test, the ceramic part can bear the pressure of 180KN and is not damaged. As shown in fig. 1 and 2.
From this it can be determined that: the pressure exerted on the connecting surface of the heat-conducting ceramic plate is the root cause for determining the damage of the ceramic plate, and the improvement measures are to reduce the pressure exerted on the connecting surface of the ceramic plate from different angles.
The new (improved) pressure mounting fixture for silicon rectifier elements is suitable for occasions with insufficient strength such as ceramics in a press-fitting unit. By the application of principle prototype machines and actual engineering fields, the requirements of specific working conditions can be completely met, and the improvement scheme is successful.
Claims (2)
1. The utility model provides a silicon is pressure anchor clamps for rectifier cell, includes 1 leaf spring clamp plate (1), 1 horizontal press plate (2), 1 pressure supporting shoe (3), 2 briquetting annex (4), its characterized in that, horizontal press plate (2) are equipped with boss (5) with heat dissipation potsherd and silicon rectifier cell contact surface one side, and the opposite side of horizontal press plate (2) is equipped with arc back of the body (6), boss (5) length is 72mm, the width is 80mm, highly is 4mm, the thickness of horizontal press plate (2) is 59 mm.
2. A pressure jig for silicon rectifier elements according to claim 1, wherein said horizontal pressing plate (2) is EN-AW-6082T6 aluminum alloy.
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CN202022561664.9U CN213424978U (en) | 2020-11-09 | 2020-11-09 | Pressure clamp for silicon rectifier element |
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CN202022561664.9U CN213424978U (en) | 2020-11-09 | 2020-11-09 | Pressure clamp for silicon rectifier element |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114573355A (en) * | 2022-04-02 | 2022-06-03 | 中材高新氮化物陶瓷有限公司 | Dynamic sintering method of nitride ceramic substrate |
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2020
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114573355A (en) * | 2022-04-02 | 2022-06-03 | 中材高新氮化物陶瓷有限公司 | Dynamic sintering method of nitride ceramic substrate |
CN114573355B (en) * | 2022-04-02 | 2022-10-14 | 中材高新氮化物陶瓷有限公司 | Dynamic sintering method of nitride ceramic substrate |
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