CN213327928U

CN213327928U - HVPE sealed automatic gallium source injection system

Info

Publication number: CN213327928U
Application number: CN202021897628.3U
Authority: CN
Inventors: 王亮; 李枝旺
Original assignee: Gatt Semiconductor Technology Tongling Co ltd
Current assignee: Gatt Semiconductor Technology Tongling Co ltd
Priority date: 2020-09-03
Filing date: 2020-09-03
Publication date: 2021-06-01
Anticipated expiration: 2030-09-03

Abstract

The utility model discloses an HVPE sealed automatic gallium source injection system, it includes: a gallium boat (1); the auxiliary gallium boat (2) is positioned above the gallium boat and is communicated with the gallium boat through a pipeline; the control valve (3) is arranged on a pipeline between the subsidiary gallium boats; an electronic balance (4); the electronic balance is arranged on the auxiliary gallium boat; the PLC (5) is in signal connection with the control valve and the electronic balance; and the computer (6) is in signal connection with the PLC. The beneficial effects of the utility model are that utilize computer control entire system, realize automatic control, accuracy and reliability are higher moreover, also can reduce the pollution to HVPE reaction chamber simultaneously, guarantee better in the gallium boat quality of gallium source and improved the yield of product simultaneously, reduced unnecessary manufacturing cost. When the gallium source is maintained or injected with a new gallium source, the whole equipment does not need to be disassembled for treatment, so that the manpower, material resources and maintenance time are greatly reduced, and the production cost is effectively reduced.

Description

HVPE sealed automatic gallium source injection system

Technical Field

The utility model relates to a semiconductor material and equipment technical field, in particular to when Hydride Vapor Phase Epitaxy (HVPE) technique grows nitride semiconductor material, a gallium source automatic supply and recovery unit.

Background

GaN is a third generation semiconductor material that has been rapidly developed following the first generation semiconductor material typified by silicon and the second generation semiconductor material typified by gallium arsenide. GaN has a direct energy band structure, a forbidden band width of 3.4eV, and also has the characteristics of high thermal conductivity, large electron saturation drift rate, high breakdown field strength, small dielectric constant and the like. Therefore, the GaN bulk single crystal has wide application prospect in a plurality of fields such as blue, green and ultraviolet Light Emitting Diodes (LEDs), short wavelength Laser Diodes (LDs), ultraviolet detectors, power electronic devices and the like, the preparation of the GaN bulk single crystal is difficult, and a bulk single crystal GaN substrate with large size and good quality is difficult to obtain, so the epitaxial growth of the GaN is usually carried out in a heteroepitaxial mode. However, theories and experiments show that when GaN is used as a substrate homoepitaxy device, the performance of the device is greatly improved. Therefore, the fabrication of GaN substrates is a focus of attention. HVPE is a relatively classical hydride vapor phase epitaxy apparatus, produces single crystal material by means of high temperature chemical vapor phase production process, and has mature process, relatively simple apparatus, good controllability, low production cost, fast growth rate, generally up to 100 micron/h, and is very suitable for preparing self-supporting nitride substrate material.

The main principle of HVPE nitride growth is: the method comprises the following steps of taking metal gallium as a III-group gallium source, ammonia (NH3) as a V-group nitrogen source, hydrogen chloride (HCl) as a reaction gas, carrying the reaction gas by carrier gas (hydrogen or nitrogen), carrying the reaction gas by a gallium boat, carrying out chemical reaction with the metal gallium in the gallium boat to generate gallium chloride (GaCl), carrying the reaction gas by the carrier gas (hydrogen or nitrogen), reacting the reaction gas with NH3 above a substrate to generate GaN, and depositing the GaN on the substrate, wherein the main chemical reactions are as follows:

2HCl(g)+2Ga(l)＝2GaCl(g)+H2(g)

GaCl(g)+NH3(g)＝GaN(S)+HCl(g)+H2(g)

hydride vapor phase epitaxy equipment is compound growth process equipment and is mainly used for epitaxially growing a layer of thick film or crystal such as GaAs, GaN and the like on the surface of a substrate through hydride gas such as H2, HCl and the like in a high-temperature environment. Because the consumption of the gallium source is fast in the growth process, the gallium source is frequently injected into the reaction cavity to maintain normal production, in order to prevent the gallium injection process from contacting the atmosphere, the atmosphere is brought into the reaction cavity to pollute the internal environment of the reaction cavity, and the recovery of the internal environment of the cavity and the purification of the cavity are required for a long time after the gallium source is injected, so that much unnecessary time and waste of raw materials are caused, and the productivity is reduced.

For example, the chinese patent publication No. CN105986313B discloses an automatic supply and recovery device for gallium source, which designs an automatic supply and recovery device for gallium source containing a boat, a communicating vessel, a control valve, an additional gallium boat, a heater, a liquid level controller, a control system and an engine. The automatic supply and recovery of the gallium source are designed and controlled by utilizing the working principle of the communicating vessel, and the problems that in the process of growing the nitride semiconductor material by the HVPE technology, the concentration of the generated gallium chloride is reduced under the same process condition because the metal gallium source is continuously consumed and the liquid level of the gallium source is continuously reduced, the uniform stability of the source material supply in a growth system of the nitride material is seriously influenced, the growth rate of crystals is reduced, the process repeatability of the thickness of the crystals is poor, the residual gallium source in a gallium boat is recycled and reused when the HVPE machine is maintained and the like are solved. However, the device needs more components and parts and has higher operation and maintenance cost.

SUMMERY OF THE UTILITY MODEL

The to-be-solved technical problem of the utility model is that the complicated fortune dimension of current gallium source automatic supply device structure is with high costs, provides an HVPE sealed automatic gallium source injection system for this reason.

The technical scheme of the utility model is that: an HVPE sealed automatic gallium source injection system comprising: a gallium boat; the auxiliary gallium boat is positioned above the gallium boat and is communicated with the gallium boat through a pipeline; the control valve is arranged on a pipeline between the subsidiary gallium boats; an electronic balance; the electronic balance is arranged on the auxiliary gallium boat; the PLC is in signal connection with the control valve and the electronic balance; and the computer is in signal connection with the PLC.

In the scheme, the gallium boat is placed in a reaction furnace.

The control valve in the above scheme is a solenoid/pneumatic valve.

In the scheme, the top of the auxiliary gallium boat is provided with a gallium source injection pipe.

In the scheme, a gallium source injection pipe is connected to a pipeline between the gallium boat and the control valve.

The beneficial effects of the utility model are that utilize computer control entire system, realize automatic control, accuracy and reliability are higher moreover, have reduced the artifical potential safety hazard that adds the gallium and bring of high temperature greatly, also can reduce the pollution to HVPE reaction chamber simultaneously, guarantee better in the gallium boat quality in the gallium source has improved the yield of product simultaneously, have reduced unnecessary manufacturing cost. The structure of the used device is simple, and the production cost is effectively reduced; the auxiliary gallium boat and the HVPE are not a whole, and when the auxiliary gallium boat and the HVPE are maintained or injected with a new gallium source, the whole equipment does not need to be disassembled for processing, so that the manpower and material resources and the maintenance time are greatly reduced, and the production cost is effectively reduced.

Drawings

FIG. 1 is a schematic view of the present invention;

in the figure, 1, a gallium boat, 2, an auxiliary gallium boat, 3, a control valve, 4, an electronic balance, 5, a PLC, 6 and a computer.

Detailed Description

The technical solution in the embodiment of the present invention is clearly and completely described below with reference to the accompanying drawings. It is to be understood that the embodiments described are only some embodiments of the invention, and not all embodiments. Based on the embodiments in the present invention, all other embodiments of the ordinary skilled person in the art without creative work belong to the protection scope of the present invention.

As shown in fig. 1, the utility model comprises: a gallium boat 1; the auxiliary gallium boat 2 is positioned above the gallium boat and is communicated with the gallium boat through a pipeline; the control valve 3 is arranged on a pipeline between the subsidiary gallium boats; an electronic balance 4; the electronic balance is arranged on the auxiliary gallium boat; the PLC5 is in signal connection with the control valve and the electronic balance; and the computer 6 is in signal connection with the PLC.

The utility model designs an injection system who contains gallium boat, attached gallium boat, electronic balance, control system, furthest solves the manual work and adds the gallium and pollutes the cavity environment and lead to adding several preceding furnaces of gallium at every turn and grow the poor scheduling problem of quality. The automatic supply is controlled by a computer, when the gallium source in the gallium boat is lower than the requirement of the growth process, the required adding amount is input through computer software, a control valve is opened, the gallium source automatically flows into the gallium boat from an auxiliary gallium boat, the required adding amount is added, an electronic balance feeds back a signal, and after the PLC receives the signal, the control valve is automatically closed, and the gallium adding is stopped. Thereby realizing the supply of the gallium source in the gallium boat. And when the HVPE machine is maintained, opening the auxiliary gallium boat and injecting a new gallium source. Therefore, the cavity does not need to be opened for manually adding the gallium source when the equipment grows, meanwhile, the potential safety hazard caused by high-temperature manual gallium adding is greatly reduced, the yield of products is improved, and unnecessary production cost is reduced. And the used device has simple structure and more effectively reduces the production cost.

The gallium boat is arranged in the reaction cavity and is mainly used for storing the metal gallium source, recording the initial amount of the gallium source stored in the gallium boat, calculating the amount of the gallium source consumed by each furnace according to the growth rate, and then injecting the required amount of the gallium source according to the consumption amount.

The auxiliary gallium boat is arranged above the reaction furnace and is mainly used for storing the metal gallium source and is higher than the gallium boat, so that the metal gallium in the specially-made gallium source container can flow into the gallium boat.

The control valve (electromagnetic valve and pneumatic valve) is installed on the gallium injection pipeline between the gallium boat and the subsidiary gallium boat and is mainly used for opening the focus gallium pipe, so that the gallium source in the subsidiary gallium boat can be controlled to be injected into the gallium boat.

The electronic balance is arranged on the auxiliary gallium boat and is mainly used for weighing the weight of the injected gallium source, so that the weight of the gallium source injected into the gallium boat by the auxiliary gallium boat can be controlled.

The PLC and PC installation equipment control part is mainly used for controlling the operation of the whole system, so that the whole system can be controlled on a computer.

In order to add the gallium source into the auxiliary gallium boat, a gallium source injection tube can be arranged at the top of the auxiliary gallium boat. A gallium source injection pipe can also be connected to a pipeline between the gallium boat and the control valve.

Claims

An HVPE sealed automatic gallium source injection system, which is characterized in that: it includes: a gallium boat (1); the auxiliary gallium boat (2) is positioned above the gallium boat and is communicated with the gallium boat through a pipeline; the control valve (3) is arranged on a pipeline between the subsidiary gallium boats; an electronic balance (4); the electronic balance is arranged on the auxiliary gallium boat; the PLC (5) is in signal connection with the control valve and the electronic balance; and the computer (6) is in signal connection with the PLC.
2. The HVPE sealed automatic gallium source implantation system according to claim 1, characterized by: the gallium boat is placed in a reaction furnace.
3. The HVPE sealed automatic gallium source implantation system according to claim 1, characterized by: the control valve is a solenoid/pneumatic valve.
4. The HVPE sealed automatic gallium source implantation system according to claim 1, characterized by: and a gallium source injection tube is arranged at the top of the auxiliary gallium boat.
5. The HVPE sealed automatic gallium source implantation system according to claim 1, characterized by: and a gallium source injection pipe is connected to a pipeline between the gallium boat and the control valve.