CN213327929U

CN213327929U - Automatic purify HVPE and get piece cabin environmental system

Info

Publication number: CN213327929U
Application number: CN202021897595.2U
Authority: CN
Inventors: 李枝旺; 王亮
Original assignee: Gatt Semiconductor Technology Tongling Co ltd
Current assignee: Gatt Semiconductor Technology Tongling Co ltd
Priority date: 2020-09-03
Filing date: 2020-09-03
Publication date: 2021-06-01
Anticipated expiration: 2030-09-03

Abstract

The utility model discloses an automatic purify HVPE and get piece cabin environmental system, it includes: a reaction chamber (1); a tablet taking cabin (2); the tablet taking cabin is arranged at the bottom of the reaction cavity; the gate valve (3) is arranged between the bottom of the reaction cavity and the top of the tablet taking cabin; and the exhaust control system is respectively communicated with the reaction cavity and the sheet taking cabin. The beneficial effects of the utility model are that a device that contains reaction chamber, gate valve, pneumatic valve, pump, exhaust control system has been designed, and furthest solves upper and lower piece and pollutes the cavity environment and lead to a few stove growth quality poor scheduling problems before upper and lower piece grows at every turn.

Description

Automatic purify HVPE and get piece cabin environmental system

Technical Field

The utility model relates to a semiconductor material and equipment technical field, in particular to when Hydride Vapor Phase Epitaxy (HVPE) technique grows nitride semiconductor material, an automatic purify HVPE and get piece cabin environmental system.

Background

GaN is a third generation semiconductor material that has been rapidly developed following the first generation semiconductor material typified by silicon and the second generation semiconductor material typified by gallium arsenide. GaN has a direct energy band structure, a forbidden band width of 3.4 eV, and also has the characteristics of high thermal conductivity, large electron saturation drift rate, high breakdown field strength, small dielectric constant and the like. Therefore, the GaN single crystal has wide application prospect in a plurality of fields such as blue, green and ultraviolet Light Emitting Diodes (LEDs), short wavelength Laser Diodes (LDs), ultraviolet detectors, power electronic devices and the like, and because the preparation of the GaN single crystal is difficult and a large-size and good-quality GaN substrate of the single crystal is difficult to obtain, the epitaxial growth of the GaN is usually carried out in a heteroepitaxial mode. However, theories and experiments show that when GaN is used as a substrate homoepitaxy device, the performance of the device is greatly improved. Therefore, the fabrication of GaN substrates is a focus of attention. HVPE is a relatively classical hydride vapor phase epitaxy apparatus, produces single crystal material by means of high temperature chemical vapor phase production process, and has mature process, relatively simple apparatus, good controllability, low production cost, fast growth rate, generally up to 100 micron/h, and is very suitable for preparing self-supporting nitride substrate material.

The main principle of HVPE nitride growth is: the method comprises the following steps of taking metal gallium as a III-group gallium source, ammonia (NH3) as a V-group nitrogen source, hydrogen chloride (HCl) as a reaction gas, carrying the reaction gas by carrier gas (hydrogen or nitrogen), carrying the reaction gas by a gallium boat, carrying out chemical reaction with the metal gallium in the gallium boat to generate gallium chloride (GaCl), carrying the reaction gas by the carrier gas (hydrogen or nitrogen), carrying the reaction gas above a substrate, reacting the reaction gas with NH3 to generate GaN, and depositing the GaN on the substrate, wherein the main chemical reactions are as follows:

2HCl(g)+2Ga(l)＝2GaCl(g)+H2(g)

GaCl(g)+NH3(g)＝GaN(S)+HCl(g)+H2(g)

hydride vapor phase epitaxy equipment is compound growth process equipment and is mainly used for epitaxially growing a layer of thick film or crystal such as GaAs, GaN and the like on the surface of a substrate through hydride gas such as H2, HCl and the like in a high-temperature environment. Because the piece cabin of getting is opened to get the piece and gets piece and last piece after finishing growing, get the piece cabin like this and can enter a large amount of air and some particulate matters, can bring air and some particulate matters into the reaction chamber when growing, cause the pollution for reaction chamber internal environment to influence the quality of wafer.

Therefore, a system for purifying the environment of the tablet taking cabin is provided.

For example, chinese utility model patent publication No. CN203007478U discloses a multi-cavity step-by-step processing apparatus for vapor phase epitaxy material growth, which comprises one or more process chambers, wherein two or more step-by-step HVPE epitaxial growth chambers are disposed on the side of the process chamber, one or more loading/unloading wafer chambers are disposed between the process chamber and the step-by-step HVPE epitaxial growth chambers, and one or more linkage transmission structures for transmission are disposed between the process chamber, the loading/unloading wafer chambers, and the step-by-step HVPE epitaxial growth chambers. The processing device still does not solve the problem of pollution inside the reaction chamber caused by taking the wafer.

SUMMERY OF THE UTILITY MODEL

The utility model provides an automatic purify HVPE and get piece cabin environmental system device to the problem that proposes in the background art and prior art not enough.

The technical scheme of the utility model is that: an automatic HVPE pod environment decontamination system, comprising: a reaction chamber; a film taking cabin; the tablet taking cabin is arranged at the bottom of the reaction cavity; the gate valve is arranged between the bottom of the reaction cavity and the top of the film taking cabin; and the exhaust control system is respectively communicated with the reaction cavity and the sheet taking cabin.

In the above scheme exhaust control system includes reaction chamber exhaust control system and gets piece cabin exhaust control system, reaction chamber exhaust control system is including first butterfly valve, first pneumatic valve and the first oil pump of establishing ties in proper order, get piece cabin exhaust control system including second butterfly valve, second pneumatic valve and the second oil pump of establishing ties in proper order, first oil pump and second oil pump switch-on with exhaust duct respectively.

The improvement of the scheme is that a third pneumatic valve between a first butterfly valve and an exhaust pipeline is connected to a pipeline formed by the first pneumatic valve and the first oil pump in parallel, and a fourth pneumatic valve between a disc taking cabin and the exhaust pipeline is connected to a pipeline formed by the second butterfly valve, the second pneumatic valve and the second oil pump in parallel.

In the scheme, the reaction cavity is arranged in the reaction furnace.

The beneficial effects of the utility model are that designed a device that contains reaction chamber, gate valve, pneumatic valve, pump, exhaust control system, furthest solved upper and lower piece and polluted the cavity environment and lead to several stove growth quality poor scheduling problems before upper and lower piece grows at every turn.

Drawings

FIG. 1 is a schematic view of the present invention;

in the figure, 1, a reaction cavity, 2, a chip taking cabin, 3, a gate valve, 4, a first butterfly valve, 5, a first pneumatic valve, 6, a first oil pump, 7, a second butterfly valve, 8, a second pneumatic valve, 9, a second oil pump, 10, an exhaust pipeline, 11, a third pneumatic valve, 12 and a fourth pneumatic valve.

Detailed Description

The technical solution in the embodiment of the present invention is clearly and completely described below with reference to the accompanying drawings. It is to be understood that the embodiments described are only some embodiments of the invention, and not all embodiments. Based on the embodiments in the present invention, all other embodiments of the ordinary skilled person in the art without creative work belong to the protection scope of the present invention.

As shown in fig. 1, the utility model comprises: a reaction chamber 1; a film taking cabin 2; the tablet taking cabin is arranged at the bottom of the reaction cavity; the gate valve 3 is arranged between the bottom of the reaction cavity and the top of the tablet taking cabin; and the exhaust control system is respectively communicated with the reaction cavity and the sheet taking cabin.

Exhaust control system includes reaction chamber exhaust control system and gets piece cabin exhaust control system, reaction chamber exhaust control system is including first butterfly valve 4, first pneumatic valve 5 and the first oil pump 6 of establishing ties in proper order, it includes second butterfly valve 7, second pneumatic valve 8 and the second oil pump 9 of establishing ties in proper order to get piece cabin exhaust control system, first oil pump and second oil pump switch-on with exhaust duct 10 respectively.

A third pneumatic valve 11 between the first butterfly valve 4 and the exhaust pipeline 10 is connected to a pipeline formed by the first pneumatic valve 5 and the first oil pump 6 in parallel, and a fourth pneumatic valve 12 between the tablet taking cabin 2 and the exhaust pipeline 10 is connected to a pipeline formed by the second butterfly valve 7, the second pneumatic valve 8 and the second oil pump 9 in parallel.

The reaction cavity is arranged in the furnace body of the equipment and is mainly used for reacting the gallium source in a specific environment to generate the required wafer.

The gate valve is installed in reaction chamber below, mainly used keep apart the reaction chamber and get the piece cabin, prevents to get a large amount of air and particulate matter entering reaction chamber when the piece.

The film taking cabin is arranged below the gate valve and is mainly used for loading and unloading films.

And the exhaust control system is mainly used for controlling the pressure of the reaction cavity and the tablet taking cabin and extracting air and particles in the tablet taking cabin.

The utility model discloses a use method as follows: when loading and unloading are completed, the door of the tablet taking cabin and the gate valve are closed, the PN2 is communicated with the reaction cavity and the tablet taking cabin, the first pneumatic valve, the first oil pump, the second pneumatic valve and the second oil pump are opened, the pressure of the reaction cavity and the pressure of the tablet taking cabin are respectively controlled by using the first butterfly valve and the second butterfly valve, and the pressure of the reaction cavity is generally greater than the pressure of the tablet taking cabin, so that the optimization of the environment of the tablet taking cabin is realized. Therefore, the yield of the wafer is well improved, and the used device has a simple structure and can effectively reduce the production cost.

The first oil pump 6 and the second oil pump are not started under a normal state, a gate valve between the reaction cavity 1 and the tablet taking cabin 2 is opened, the pressure of the reaction cavity 1 and the pressure of the tablet taking cabin 2 are controlled by the first butterfly valve 4, the second butterfly valve 7, the first pneumatic valve 5 and the second pneumatic valve 8 are closed, waste gas of the reaction cavity 1 is discharged by the first butterfly valve 4 and the third pneumatic valve 11, and waste gas of the tablet taking cabin 2 is discharged by the fourth pneumatic valve 12.

Claims

1. Automatic purify HVPE and get piece cabin environmental system, characterized by: it includes: a reaction chamber (1); a tablet taking cabin (2); the tablet taking cabin is arranged at the bottom of the reaction cavity; the gate valve (3) is arranged between the bottom of the reaction cavity and the top of the tablet taking cabin; and the exhaust control system is respectively communicated with the reaction cavity and the sheet taking cabin.

2. The system for automatically decontaminating an HVPE film-taking chamber environment of claim 1, wherein: exhaust control system includes reaction chamber exhaust control system and gets piece cabin exhaust control system, reaction chamber exhaust control system is including first butterfly valve (4), first pneumatic valve (5) and first oil pump (6) that establish ties in proper order, get piece cabin exhaust control system including second butterfly valve (7), second pneumatic valve (8) and second oil pump (9) that establish ties in proper order, first oil pump and second oil pump switch-on with exhaust duct (10) respectively.

3. The system for automatically decontaminating an HVPE film-taking chamber environment of claim 2, wherein: the third pneumatic valve (11) that are located between first butterfly valve (4) and exhaust duct (10) are connected in parallel to the pipeline that first pneumatic valve (5) and first oil pump (6) constitute on, parallel connection has fourth pneumatic valve (12) that are located between chamber of getting (2) and exhaust duct (10) on the pipeline that second butterfly valve (7), second pneumatic valve (8) and second oil pump (9) constitute.

4. The system for automatically decontaminating an HVPE film-taking chamber environment of claim 1, wherein: the reaction cavity is arranged in the reaction furnace.