CN213327939U

CN213327939U - HVPE closed manual gallium adding device

Info

Publication number: CN213327939U
Application number: CN202022168536.8U
Authority: CN
Inventors: 李枝旺; 王亮
Original assignee: Gatt Semiconductor Technology Tongling Co ltd
Current assignee: Gatt Semiconductor Technology Tongling Co ltd
Priority date: 2020-09-28
Filing date: 2020-09-28
Publication date: 2021-06-01
Anticipated expiration: 2030-09-28

Abstract

The utility model discloses a manual gallium device that adds of HVPE closed, it includes: a gallium container (1); a gallium boat (2) located below the gallium container; a first manual valve (3) communicated with the bottom of the gallium container; the second manual valve (4) is respectively communicated with the first manual valve and the gallium boat; and one end of the first pneumatic valve is connected between the first manual valve and the second manual valve, and the other end of the first pneumatic valve is communicated with the outside. The beneficial effects of the utility model are that utilize control system, realize airtight manual work and add the gallium, get rid of that can be fine adds the air of gallium device and add the entering of gallium in-process air. Greatly improving the environment of the cavity polluted by the gallium. The reaction environment of the reaction cavity is better ensured, the yield of products is improved, and unnecessary production cost is reduced. And the used device has simple structure and less consumed parts, thereby more effectively reducing the production cost.

Description

HVPE closed manual gallium adding device

Technical Field

The utility model relates to a semiconductor material and equipment technical field, in particular to when Hydride Vapor Phase Epitaxy (HVPE) technique grows nitride semiconductor material, the manual gallium device that adds of HVPE closed.

Background

GaN is a third generation semiconductor material that has been rapidly developed following the first generation semiconductor material typified by silicon and the second generation semiconductor material typified by gallium arsenide. GaN has a direct energy band structure, a forbidden band width of 3.4 eV, and also has the characteristics of high thermal conductivity, large electron saturation drift rate, high breakdown field strength, small dielectric constant and the like. Therefore, the GaN single crystal has wide application prospect in a plurality of fields such as blue, green and ultraviolet Light Emitting Diodes (LEDs), short wavelength Laser Diodes (LDs), ultraviolet detectors, power electronic devices and the like, and because the GaN single crystal is difficult to prepare and a large-size and good-quality GaN substrate of the single crystal is difficult to obtain, the GaN epitaxial growth is usually carried out in a heteroepitaxial mode. However, theories and experiments show that when GaN is used as a substrate homoepitaxy device, the performance of the device is greatly improved. Therefore, the fabrication of GaN substrates is a focus of attention. HVPE is a relatively classical hydride vapor phase epitaxy apparatus, produces single crystal material by means of high temperature chemical vapor phase production process, and has mature process, relatively simple apparatus, good controllability, low production cost, fast growth rate, generally up to 100 micron/h, and is very suitable for preparing self-supporting nitride substrate material.

The main principle of HVPE nitride growth is: the method comprises the following steps of taking metal gallium as a III-group gallium source, ammonia (NH3) as a V-group nitrogen source, hydrogen chloride (HCl) as a reaction gas, carrying the reaction gas by carrier gas (hydrogen or nitrogen), carrying the reaction gas by a gallium boat, carrying out chemical reaction with the metal gallium in the gallium boat to generate gallium chloride (GaCl), carrying the reaction gas by the carrier gas (hydrogen or nitrogen), reacting the reaction gas with NH3 above a substrate to generate GaN, and depositing the GaN on the substrate, wherein the main chemical reactions are as follows:

2HCl(g)+2Ga(l)＝2GaCl(g)+H2(g)

GaCl(g)+NH3(g)＝GaN(S)+HCl(g)+H2(g)

hydride vapor phase epitaxy equipment is compound growth process equipment and is mainly used for epitaxially growing a layer of thick film or crystal such as GaAs, GaN and the like on the surface of a substrate through hydride gas such as H2, HCl and the like in a high-temperature environment. Due to the limitation of the space of the reaction cavity and the gallium boat, the gallium source in the gallium boat can only grow for a period of time, gallium is manually processed before the gallium boat is used up, the flange of the cavity is disassembled when the gallium is added, and the pressure of the cavity is smaller than the atmospheric pressure, so that a large amount of air and particles are sucked into the cavity, the environment in the reaction cavity is polluted, and the quality of a wafer is influenced. And the temperature of the cavity is higher when the gallium is added, the gallium can be added only by reducing the temperature to a certain degree for the sake of safety, and the temperature is increased after the gallium is added, so that the gallium adding time is prolonged. And frequent temperature rise and fall, some junctions of the equipment can cause poor air tightness due to expansion with heat and contraction with cold.

The invention discloses a Chinese patent publication No. CN105986313B, which discloses an automatic gallium source supplying and recovering device, and designs an automatic gallium source supplying and recovering device comprising a gallium-containing boat, a communicating vessel, a control valve, an additional gallium boat, a heater, a liquid level controller, a control system and an engine. The working principle of the communicating vessel is utilized to design and control the automatic supply and recovery of the gallium source, and the device still has a small amount of air and particles remained in the communicating vessel and the control valve during installation, thereby bringing pollution.

SUMMERY OF THE UTILITY MODEL

The to-be-solved technical problem of the utility model is that current HVPE has impurity contamination, provides a manual gallium device that adds of HVPE closed for this reason.

The technical scheme of the utility model is that: an HVPE closed manual gallium adding device, comprising: a gallium container; a gallium boat positioned below the gallium container; a first manual valve, wherein the first manual valve is communicated with the bottom of the gallium container; the second manual valve is respectively communicated with the first manual valve and the gallium boat; and one end of the first pneumatic valve is connected between the first manual valve and the second manual valve, and the other end of the first pneumatic valve is communicated with the outside.

The improvement of the proposal also comprises a second pneumatic valve which is communicated with the gallium boat.

The further improvement of the scheme is that a PN2 pipeline is communicated with the gallium container.

A further improvement of the scheme is that a valve is connected to the PN2 pipeline.

In the scheme, the number of the PN2 pipelines is two.

The beneficial effects of the utility model are that utilize the control system that first manual valve, the manual valve of second, first pneumatic valve constitute, realize airtight manual work and add the gallium, get rid of that can be fine adds the air of gallium device and add the entering of gallium in-process air. Greatly improving the environment of the cavity polluted by the gallium. The reaction environment of the reaction cavity is better ensured, the yield of products is improved, and unnecessary production cost is reduced. And the used device has simple structure and less consumed parts, thereby more effectively reducing the production cost.

Drawings

FIG. 1 is a schematic view of the present invention;

in the figure, 1, a gallium container, 2, a gallium boat, 3, a first manual valve, 4, a second manual valve, 5, a first pneumatic valve, 6 and a second pneumatic valve.

Detailed Description

The technical solution in the embodiment of the present invention is clearly and completely described below with reference to the accompanying drawings. It is to be understood that the embodiments described are only some embodiments of the invention, and not all embodiments. Based on the embodiments in the present invention, all other embodiments of the ordinary skilled person in the art without creative work belong to the protection scope of the present invention.

As shown in fig. 1, the utility model comprises: a gallium container 1; a gallium boat 2, which is positioned below the gallium container; a first manual valve 3, which is communicated with the bottom of the gallium container; the second manual valve 4 is respectively communicated with the first manual valve and the gallium boat; and one end of the first pneumatic valve is connected between the first manual valve and the second manual valve, and the other end of the first pneumatic valve is communicated with the outside.

The utility model designs a contain the manual gallium device that adds that gallium boat, control system, gallium container constitute, furthest solves the manual gallium that adds and pollutes the cavity environment and lead to adding several furnaces growth quality poor scheduling problems before the gallium growth at every turn. The injection of the gallium source is realized by changing the pressure of the cavity, after the whole device is installed, PN2 is introduced into the gallium boat and the gallium containing volume in the cavity, the second pneumatic valve, the second manual valve and the first pneumatic valve are opened, the pressure of the control cavity is greater than the atmospheric pressure, PN2 in the gallium boat is discharged from the first pneumatic valve, air in a pipeline in the installation process of the manual gallium adding system device can be taken away, then the first pneumatic valve is closed, the pressure of the control cavity is less than the atmospheric pressure, the first manual valve is slowly opened, and the gallium source can be slowly injected into the gallium boat. So that no air enters the chamber during the entire gallium addition process. The yield of the wafer is well improved, and the used device has a simple structure, so that the production cost is effectively reduced.

For better control of the PN2 for the gallium boat access, it is preferable to further include a second pneumatic valve 6 in communication with the gallium boat.

In order to control the PN2 introduced into the gallium container, a PN2 pipeline is communicated with the gallium container. The PN2 pipeline is connected with a valve, and the number of the PN2 pipelines can be two or even more.

The utility model discloses an inside the gallium boat erection equipment cavity, mainly used reacted depositing of gallium source and reacted in specific environment, generated our all wafers.

The control system is arranged between the gallium boat and the gallium volume and is mainly used for removing air in the pipeline and injecting the gallium source.

The gallium container is arranged above the whole control system and is mainly used for storing a gallium source.

Claims

An HVPE closed manual gallium adding device is characterized in that: it includes: a gallium container (1); a gallium boat (2) located below the gallium container; a first manual valve (3) communicated with the bottom of the gallium container; the second manual valve (4) is respectively communicated with the first manual valve and the gallium boat; and one end of the first pneumatic valve is connected between the first manual valve and the second manual valve, and the other end of the first pneumatic valve is communicated with the outside.
2. The HVPE closed manual gallium dosing apparatus of claim 1, wherein: and the second pneumatic valve (6) is communicated with the gallium boat.
3. The HVPE closed manual gallium dosing apparatus of claim 1, wherein: the gallium container (1) is communicated with a PN2 pipeline.
4. The HVPE closed manual gallium dosing apparatus of claim 3, wherein: and a valve is connected to the PN2 pipeline.
5. The HVPE closed manual gallium dosing apparatus according to claim 3 or 4, wherein: there are two PN2 pipelines.