KR20140009638A - Reaction metal supply units of vertical hydride vapor phase epitaxy reactor - Google Patents

Reaction metal supply units of vertical hydride vapor phase epitaxy reactor Download PDF

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KR20140009638A
KR20140009638A KR1020120075882A KR20120075882A KR20140009638A KR 20140009638 A KR20140009638 A KR 20140009638A KR 1020120075882 A KR1020120075882 A KR 1020120075882A KR 20120075882 A KR20120075882 A KR 20120075882A KR 20140009638 A KR20140009638 A KR 20140009638A
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metal source
reactor
source supply
container
hydride vapor
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KR1020120075882A
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Korean (ko)
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이경하
김상철
김상봉
임원근
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주식회사루미지엔테크
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

The present invention relates to a reactive metal source supply apparatus of a vertical hydride vapor phase epitaxy reactor (HVPE - reactor), in which a container (2) of a metal source for growth is equipped in a reactor (1), and a metal source supply unit (3) is provided outside or inside the reactor separately from the container (2) of a metal source for growth. A metal source (4) is consumed as hydro chloride (HCl) supplied through a hydro chloride (HCl) supply pipe positioned within the container (2) of a metal source for growth, and the metal source (4) are reacted to form GaCl, and, therefore, the same condition is not maintained. As such, the consumed amount of the metal source (4) is supplemented from the separate metal source supply unit (3) by using nitrogen pressure. The amount of the metal source (4) in the container (2) of a metal source for growth is able to be maintained constantly through a metal source supply apparatus so that the reaction efficiency of hydro chloride (HCl) and the metal source (4) is the same, which enables the same process condition to be maintained for a long term, and the same growth rate and the process reproducibility to be secured.

Description

수직형 수소화물 기상 증착 반응기의 반응 금속원 공급장치 {Reaction metal supply units of vertical hydride vapor phase epitaxy reactor}Reaction metal supply units of vertical hydride vapor phase epitaxy reactor}

본 발명은 수직형 수소화물 기상 증착 반응기(HVPE - Reactor)의 반응 금속원 공급장치에 관한 것으로, 상세하게는 반응기 내부에 설치된 금속원 용기 내부의 금속원이 반응 가스(HCl)와 반응하여 소모됨에 따라 별도의 금속원 공급부에 있는 금속원을 질소 압력 조절기 및 질소 공급 밸브를 사용하여 상기 금속원 용기에 보충하여 줌으로써 공정 진행 중 반응가스(HCl)와 금속원의 반응 비율 및 효율을 일정하게 유지하도록 하여 장시간 동일한 공정 조건 유지 및 동일한 성장률과 동일한 공정 재현성을 확보할 수 있도록 한 수소화물 기상 증착기(HVPE - Reactor)의 반응 금속원 공급장치에 관한 것이다.
The present invention relates to a reactive metal source supply apparatus of a vertical hydride vapor deposition reactor (HVPE-Reactor), in particular, because the metal source inside the metal source vessel installed inside the reactor is consumed by reacting with the reaction gas (HCl) Therefore, the metal source in the separate metal source supply part is supplemented to the metal source container using a nitrogen pressure regulator and a nitrogen supply valve to maintain a constant reaction ratio and efficiency of the reaction gas (HCl) and the metal source during the process. The present invention relates to a reactive metal source supply apparatus of a hydride vapor deposition machine (HVPE-Reactor), which is capable of maintaining the same process conditions for a long time and ensuring the same growth rate and the same process reproducibility.

청색 및 UV 계열 발광 소자 등의 기판 재료로 사용되는 GaN 기판 제조에 관한 다양한 방법이 제안되어 있다. 그 중 성장 속도가 50㎛/1hour 이상으로 매우 빠른 수소화물 기상 증착법(HVPE)을 이용하여 사파이어 기판이나 탄화규소(SiC) 등과 같은 모기판 위에 GaN 후막을 성장시킨 후 모기판을 제거하여 GaN 기판을 제조하고 있다.
Various methods for manufacturing GaN substrates used as substrate materials such as blue and UV light emitting devices have been proposed. Among them, a GaN thick film is grown on a mother substrate such as sapphire substrate or silicon carbide (SiC) using hydride vapor deposition (HVPE), which has a growth rate of 50 µm / 1 hour or more, and then removes the mother substrate. Manufacture.

본 발명과 관련된 종래 기술에 따른 수직형 수소화물 기상 증착 반응기(HVPE-Reactor)의 반응 금속원 공급장치는 첨부된 도 1에 도시된 바와 같이 반응기(1) 내에 위치한 금속원 용기(2)에 금속원(4)이 위치하고 그 위로 염화수소(HCl) 가스 공급관을 통해 반응가스(HCl)가 금속원 용기(2)에 공급되어 금속원(4)의 표면, 즉 금속원 용기(2)에 담긴 금속원 표면과 반응하여 GaCl을 형성한 후 석영관을 통해 서셉터(15) 위에 놓여져 있는 기판(14)의 위까지 공급된 후, Ga과 Cl로 다시 분해하여 Ga을 공급하게 된다. 또한, 기판(14) 위까지 질소(N) 소스의 공급은 암모니아(NH3) 가스 공급관에서 공급되는 암모니아(NH3) 가스가 기판(14) 위까지 공급되어 GaCl에서 공급되는 Ga과 반응하여 서셉터(15)위에 놓여진 기판(14) 위에 GaN층이 성장되게 된다. 전체 가스 흐름을 위해 별도의 운반가스 공급관이 반응관 내에 위치되어 있다.
Reactive metal source supply of a vertical hydride vapor deposition reactor (HVPE-Reactor) according to the prior art associated with the present invention is a metal source vessel (2) located within the reactor (1) as shown in Figure 1 attached The source 4 is located and the reaction gas (HCl) is supplied to the metal source vessel 2 through a hydrogen chloride (HCl) gas supply pipe thereon, the surface of the metal source 4, that is, the metal source contained in the metal source vessel (2) After reacting with the surface to form GaCl, it is supplied through the quartz tube up to the substrate 14 placed on the susceptor 15, and then decomposed into Ga and Cl again to supply Ga. In addition, the supply of the nitrogen (N) source up to the substrate 14 reacts with the Ga supplied from GaCl supplied to the ammonia (NH 3 ) gas supplied from the ammonia (NH 3 ) gas supply pipe to the substrate 14. The GaN layer is grown on the substrate 14 placed on the acceptor 15. A separate carrier gas supply line is located in the reaction tube for the entire gas flow.

상기한 바와 같은 기존의 방식으로 Ga과 같은 금속원(4)과 반응가스(HCl)가 반응하여 GaCl을 형성하여 공급하게 되면서 Ga이 소모되게 된다. 이때, 금속원 용기(2)에 일정량의 금속원(4)은 장시간 사용될 경우 반응하는 금속원(4)의 양이 감소하게 되어 금속원(4)과 반응가스(HCl)의 반응이 충분히 이루어지지 않아 효율이 떨어지거나 반응 비율이 달라져 성장 시간에 따른 성장률 및 성장 재현성이 저하되고, 연속 성장이 불가능하게 되어 두꺼운 GaN층 성장에 문제점을 초래하게 된다.
As described above, Ga is consumed as the metal source 4 such as Ga and the reaction gas (HCl) react with each other to form GaCl and supply the GaCl. At this time, when a certain amount of the metal source (4) in the metal source container (2) is used for a long time, the amount of the metal source (4) reacts is reduced so that the reaction between the metal source 4 and the reaction gas (HCl) is sufficiently made As a result, the efficiency is lowered or the reaction rate is changed, thereby reducing the growth rate and growth reproducibility according to the growth time, and the continuous growth is impossible, which causes problems in the growth of the thick GaN layer.

본 발명의 목적은 전술한 문제점을 해결하기 위해 별도의 반응 금속원 공급 장치를 제공하여 반응가스(HCl)와 반응하는 금속원의 양을 항상 일정하게 유지 또는 조절하여 성장 시간에 관계없이 동일한 성장률, 우수한 성장 효율, 동일한 성장 재현성을 확보할 수 있도록 하는 데 있다.
It is an object of the present invention to provide a separate reaction metal source supply device to solve the above-mentioned problems to maintain or control the amount of metal source to react with the reaction gas (HCl) at all times the same growth rate, regardless of growth time, It is to ensure excellent growth efficiency and the same growth reproducibility.

상기한 목적을 달성하기 위하여 본 발명은 수소화물 기상 증착 반응기(HVPE - Reactor)에 반응 금속원을 공급하는 장치로 수직형 수소화물 기상 증착 반응기(HVPE - Reactor)에 금속원 용기에 금속원 공급관을 통하여 별도의 금속원 용기로부터 금속원을 추가할 수 있으며, 질소 압력 조절기 및 질소 공급 밸브를 통하여 공급되는 금속원의 양을 조절할 수 있는 수소화물 기상 증착 반응기의 반응 금속원 공급장치를 제공한다.
In order to achieve the above object, the present invention is a device for supplying a reactive metal source to the hydride vapor deposition reactor (HVPE-Reactor) to supply a metal source supply pipe to the metal source vessel in the vertical hydride vapor deposition reactor (HVPE-Reactor) It is possible to add a metal source from a separate metal source vessel through, and to provide a reactive metal source supply device of the hydride vapor deposition reactor that can adjust the amount of the metal source supplied through the nitrogen pressure regulator and the nitrogen supply valve.

본 발명은 반응가스(HCl)와 반응하는 금속원의 양을 일정하게 유지하거나 사용자가 원하는 양으로 유지하여 공정 진행 시간에 관계없이 동일한 공정 조건을 유지하여 반응가스(HCl)와 반응 금속원의 반응 효율을 일정하게 유지할 수 있는 효과를 갖는다.
The present invention maintains a constant amount of the metal source reacting with the reaction gas (HCl) or the amount desired by the user to maintain the same process conditions regardless of the process run time reaction of the reaction gas (HCl) and the reaction metal source It has the effect of maintaining a constant efficiency.

도 1은 종래의 수직형 수소화물 기상증착반응기의 구성도,
도 2는 본 발명의 바람직한 실시 예에 의한 수직형 수소화물 기상증착반응기의 금속원 공급장치를 나타낸 구성도,
도 3은 본 발명의 다른 실시 예에 의한 따른 별도 금속원 공급부가 금속원 용기와 일체로 구성되어 하나의 용기를 금속원 공급부와 금속원 용기로 사용할 수 있도록 한 구성도이다. 1 is a block diagram of a conventional vertical hydride vapor deposition reactor,
2 is a block diagram showing a metal source supply apparatus of a vertical hydride vapor deposition reactor according to a preferred embodiment of the present invention,
FIG. 3 is a configuration diagram in which a separate metal source supply unit is integrated with a metal source container according to another embodiment of the present invention so that one container may be used as the metal source supply unit and the metal source container.

이하, 본 발명을 한정하지 않는 바람직한 실시 예를 첨부된 도면에 의하여 상세히 설명하기로 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

본 발명의 설명에 있어서 도 1에 도시된 종래기술과 동일한 구성 요소에 대하여는 편의상 동일부호를 사용하여 설명하기로 한다. In the description of the present invention, the same components as in the prior art shown in FIG. 1 will be described using the same reference numerals for convenience.

도 2는 본 발명의 바람직한 실시 예에 의한 수직형 수소화물 기상 증착기(HVPE)의 반응 금속원 공급장치를 도시한 것으로, 반응기(1) 안에 금속원 용기(2)가 위치하고, 상기 금속원 용기(2)에 금속원 공급관(7)으로 연결된 별도의 금속원 공급부(3)가 위치한다. FIG. 2 illustrates a reactive metal source supply apparatus of a vertical hydride vapor deposition machine (HVPE) according to a preferred embodiment of the present invention, wherein a metal source container 2 is located in a reactor 1, and the metal source container ( 2) a separate metal source supply unit 3 is connected to the metal source supply pipe (7).

또, 본 실시 예에서 상기 금속원 공급관(7)을 통해 외부 금속원 공급부(3)의 금속원(4)을 금속원 용기(2)에 공급 시 정밀한 양의 공급을 위해 저울(8) 및 질소 압력 조절기(5; regulator)와 질소 공급 밸브(6)를 조절하여 공급할 수 있도록 되어 있다.
In addition, in the present embodiment, when the metal source 4 of the external metal source supply unit 3 is supplied to the metal source container 2 through the metal source supply pipe 7, the scale 8 and the nitrogen are supplied for a precise amount of supply. Pressure regulator (5; regulator) and nitrogen supply valve (6) can be adjusted to supply.

본 실시 예에 의한 공급장치는 별도의 금속원 공급부(3)가 외부에 존재하며, 공정 중 또는 공정 전에 금속원(4)을 장비의 분리 없이 추가하여 수소화물 기상 증착기(HVPE) 반응기(1) 내에 위치한 금속원 용기(2)의 금속원 양을 정정한 상태가 되도록 조절할 수 있다. In the supply apparatus according to the present embodiment, a separate metal source supply unit 3 exists outside, and a metal hydride vapor deposition (HVPE) reactor (1) is added by adding a metal source (4) without separation of equipment during or before the process. The amount of the metal source of the metal source container 2 located inside can be adjusted to be in a corrected state.

이에 의하여 반응가스(HCl)와 반응되는 금속원(4)의 양은 항상 일정하게 유지되면서 동일한 반응 효율로 공정을 진행할 수 있다.
As a result, the amount of the metal source 4 reacted with the reaction gas (HCl) may be constantly maintained at a constant level, and may proceed with the same reaction efficiency.

또한, 본 발명에서 반응기(1) 외부에 위치한 별도 금속원 공급부(3)와 금속원 공급관(7)은 HCl가스를 사용하기 때문에 석영 재료로 만들어지며, 상기 별도 금속원 공급부(3)에는 금속원의 양을 확인할 수 있도록 눈금(도시 안 됨) 및 저울(8)을 설치하여 양 및 무게를 표시할 수 있도록 되어 있다.
In addition, in the present invention, the separate metal source supply part 3 and the metal source supply pipe 7 located outside the reactor 1 are made of quartz material because HCl gas is used, and the separate metal source supply part 3 includes a metal source. A scale (not shown) and scale (8) are installed to check the quantity of the quantity and weight.

또한, 내부의 금속원(4)이 고체화되는 것을 방지하고 공급이 원활하게 이루어질 수 있도록 상기 금속원 공급부(3)의 외부에 히터(9)를 설치하여 액상 상태를 유지하도록 구성되어 있다.
In addition, it is configured to maintain a liquid state by installing a heater 9 on the outside of the metal source supply unit 3 to prevent the internal metal source 4 from solidifying and to facilitate the supply.

또한, 본 실시 예에서는 반응기(1) 외부에 설치된 별도의 금속원 공급부(3)에 저장된 금속원(4)을 반응기(1) 내부에 설치된 금속원 용기(2)로 공급 시 미세 공급이 가능하도록 하기 위한 질소 압력 조절기(5) 및 질소 공급 밸브(6)는 공급량 및 공급 상태를 정밀하게 제어할 수 있도록 해야 하고, 금속원의 교체 시 산화되는 것을 방지하고 금속원 공급부(3)에 있는 금속원(4)을 주입하기 위하여 금속원 용기 즉, 금속원 공급부(3)의 입구와 출구 측에 별도의 수동 조절 밸브(12,13)가 각각 장착되어 있다.
In addition, in the present embodiment, to supply the metal source 4 stored in the separate metal source supply unit 3 installed outside the reactor 1 to the metal source container 2 installed inside the reactor 1 so that fine supply is possible. The nitrogen pressure regulator (5) and the nitrogen supply valve (6) must be able to precisely control the supply amount and supply state, to prevent oxidation during the replacement of the metal source and to prevent the metal source in the metal source supply (3) In order to inject (4), separate manual control valves 12 and 13 are mounted at the inlet and outlet sides of the metal source container, that is, the metal source supply part 3, respectively.

또한, 상기 금속원 공급부(3)의 금속원(4)은 금속원 공급관(7)을 통해 반응기(1) 내부에 설치된 금속원 용기(2)에 주입되도록 되어 있으며, 염화수소의 누출 또는 외부 산소의 유입이 되지 않도록 밀봉할 수 있도록 되어 있다. In addition, the metal source 4 of the metal source supply unit 3 is to be injected into the metal source container 2 installed inside the reactor 1 through the metal source supply pipe 7, and the leakage of hydrogen chloride or external oxygen It can be sealed to prevent inflow.

또한, 상기 금속원 공급부(3)의 입구 측에는 진공용 수동밸브(11)가 상기 질소 공급 밸브(6)와 병렬로 설치되어 있어 도시 안 된 진공 펌프 등을 이용하여 부압을 걸어주는 것에 의해 금속원 공급부(3)의 내부에 금속원(4)이 산화될 수 있는 조건 즉, 산소 등을 제거할 수 있도록 되어 있다.
In addition, a vacuum manual valve 11 is installed at the inlet side of the metal source supply unit 3 in parallel with the nitrogen supply valve 6 to apply a negative pressure using a vacuum pump or the like not shown. The inside of the supply part 3 is capable of removing the conditions under which the metal source 4 can be oxidized, that is, oxygen.

또, 본 발명에서는 상기 금속원 공급부(3)의 금속원(4)을 반응기(1) 내부의 금속원 용기(2)로 주입 후 금속원 공급관(7)의 오염을 방지할 수 있도록 공급관 퍼지 밸브(10)가 설치되어 있다.
In addition, in the present invention, after the metal source 4 of the metal source supply unit 3 is injected into the metal source container 2 inside the reactor 1, the supply pipe purge valve to prevent contamination of the metal source supply pipe 7 (10) is provided.

도 3은 본 발명의 다른 실시 예에 의한 반응 금속원 공급장치의 구성을 도시한 것으로, 본 실시 예에서는 금속원 공급부(3)가 반응기(1) 내에 위치하여 금속원 용기(2)와 금속원 공급부(3) 기능을 동시에 수행하도록 되어 있는데, 이는 금속원 공급부(3)의 내부에는 금속원(4)이 주입되어 있고, 이 금속원(4)은 외부의 질소 압력 조절기(5)와 질소 공급 밸브(6)를 통해 외부로부터 공급되는 질소 가스의 압력을 조절하는 것에 의해 펌핑되어 금속원 공급관(7)을 통해 금속원 용기(2) 쪽으로 보충될 수 있도록 되어 있으며, 이에 의해 반응가스와 접촉하는 금속원 용기(2) 내의 금속원(4)은 항상 일정한 양을 유지할 수 있는 것이다.
FIG. 3 illustrates a structure of a reaction metal source supply device according to another embodiment of the present invention. In the present embodiment, the metal source supply unit 3 is located in the reactor 1, and thus the metal source container 2 and the metal source. It is to perform the function of the supply unit 3 at the same time, which is a metal source 4 is injected into the metal source supply unit 3, the metal source (4) is supplied with an external nitrogen pressure regulator (5) and nitrogen supply It is pumped by regulating the pressure of the nitrogen gas supplied from the outside through the valve 6 so that it can be replenished to the metal source container 2 through the metal source supply pipe 7, thereby contacting the reaction gas. The metal source 4 in the metal source container 2 can always maintain a constant quantity.

이와 같이 구성된 본 발명의 반응 금속원 공급장치는 반응기 내부에 설치된 금속원 용기 내부의 금속원이 반응 가스(HCl)와 반응하여 소모됨에 따라 별도의 금속원 공급부에 있는 금속원을 질소 압력 조절기 및 질소 공급 밸브를 조절하여 질소 가스의 압력에 의해 상기 금속원 용기에 보충하여 줌으로써 공정 진행 중 반응가스(HCl)와 금속원의 반응 비율 및 효율을 일정하게 유지할 수 있게 되는 것이며, 이에 의해 장시간 동일한 공정 조건 유지 및 동일한 성장률과 동일한 공정 재현성을 확보할 수 있는 유용한 효과를 갖는다.
The reaction metal source supply apparatus of the present invention configured as described above uses a nitrogen pressure regulator and nitrogen as a metal source in a separate metal source supply unit as the metal source inside the metal source vessel installed in the reactor is consumed by reacting with the reaction gas (HCl). By regulating the supply valve to supplement the metal source container with the pressure of nitrogen gas, the reaction ratio and efficiency of the reaction gas (HCl) and the metal source can be kept constant during the process, thereby maintaining the same process conditions for a long time. It has a useful effect to ensure maintenance and the same growth rate and the same process reproducibility.

1 : 반응기(HVPE Reactor) 2 : 금속원 용기 (Gallium boat)
3 : 금속원 공급부 4 : 금속원(예 : Ga 금속)
5 : 질소 압력 조절기(Regulator) 6 : 질소 공급 밸브
7 : 금속원 공급관 8 : 저울
9 : 히터 10 : 공급관 퍼지 밸브
11 : 진공용 수동밸브 12 : 주입 수동밸브
13 : 공급 수동밸브 14 : 기판
15 : 서셉터1: HVPE Reactor 2: Metal source vessel (Gallium boat)
3: metal source supply part 4: metal source (for example, Ga metal)
5: nitrogen pressure regulator 6: nitrogen supply valve
7: metal source supply pipe 8: scale
9 heater 10 supply line purge valve
11: Manual valve for vacuum 12: Injection manual valve
13 supply manual valve 14 substrate
15: susceptor

Claims (7)

반응기(1) 내에 금속원 용기(2)가 위치하고, 상기 금속원 용기(2)로 반응가스가 공급되어 금속원(4)과 반응하도록 구성된 수소화물 기상 증착 반응기의 반응 금속원 공급장치에 있어서;
상기 반응기(1) 내에 위치한 금속원 용기(2)로 금속원 공급관(7)을 통해 별도의 금속원 공급부(3)에서 금속원(4)을 질소의 압력을 이용하여 공급함으로써 반응기(1) 내에 위치한 금속원 용기(2)에 저장되는 금속원(4)의 양을 일정하게 유지할 수 있도록 된 것을 특징으로 하는 수직형 수소화물 기상 증착 반응기의 반응 금속원 공급장치.
A reactive metal source supply apparatus of a hydride vapor deposition reactor in which a metal source vessel (2) is located in a reactor (1) and a reaction gas is supplied to the metal source vessel (2) to react with the metal source (4);
Into the reactor (1) by supplying the metal source (4) using a pressure of nitrogen from a separate metal source supply unit (3) through a metal source supply pipe (7) to the metal source container (2) located in the reactor (1) Reactive metal source supply of a vertical hydride vapor deposition reactor, characterized in that it is possible to maintain a constant amount of the metal source (4) stored in the located metal source container (2).
청구항 1에 있어서,
상기 별도의 금속원 공급부(3)에서 반응기(1) 내에 위치한 금속원 용기(2)로 금속원(4)을 질소가스의 압력을 이용하여 공급할 때, 질소가스의 압력은 금속원 공급부(3)의 입구측에 설치된 질소 압력 조절기(5)와 질소 공급 밸브(6)를 통하여 조절하는 것을 특징으로 하는 수직형 수소화물 증착 반응기의 반응 금속원 공급장치.
The method according to claim 1,
When the metal source 4 is supplied using the pressure of nitrogen gas from the separate metal source supply part 3 to the metal source container 2 located in the reactor 1, the pressure of the nitrogen gas is equal to the metal source supply part 3. Reactive metal source supply apparatus of the vertical hydride deposition reactor, characterized in that through the nitrogen pressure regulator (5) and the nitrogen supply valve (6) installed at the inlet side of the.
청구항 1에 있어서,
상기 금속원 공급부(3)에서 금속원 용기(2)로 금속원(4)을 공급 후, 금속원 공급관(7)의 오염을 방지할 수 있도록 공급관 퍼지 밸브(10)가 더 설치되는 것을 특징으로 하는 수직형 수소화물 증착 반응기의 반응 금속원 공급장치.
The method according to claim 1,
After the metal source 4 is supplied from the metal source supply unit 3 to the metal source container 2, a supply pipe purge valve 10 is further installed to prevent contamination of the metal source supply pipe 7. Reactive metal source supply apparatus of the vertical hydride deposition reactor.
청구항 1에 있어서,
상기 금속원 공급관(7) 및 금속원 공급부(3)에는 금속원(4)이 고체화되는 것을 방지하기 위해 히터(9)가 설치되는 것을 특징으로 하는 수직형 수소화물 기상 증착 반응기의 반응 금속원 공급장치.
The method according to claim 1,
The metal source supply pipe 7 and the metal source supply part 3 are supplied with a reactive metal source in a vertical hydride vapor deposition reactor, characterized in that a heater 9 is installed to prevent the metal source 4 from solidifying. Device.
청구항 1에 있어서,
상기 금속원 공급부(3)에는 금속원의 무게를 확인할 수 있도록 저울(8)이 설치된 것을 특징으로 하는 수직형 수소화물 기상 증착 반응기의 반응 금속원 공급장치.
The method according to claim 1,
Reactive metal source supply device of the vertical hydride vapor deposition reactor, characterized in that the scale (8) is installed in the metal source supply unit (3) to check the weight of the metal source.
청구항 1에 있어서,
상기 금속원 공급부(3)는 반응기(1) 내에 위치하여 금속원 용기(2)와 금속원 공급부(3) 기능을 동시에 수행하는 것을 특징으로 하는 수직형 수소화물 기상 증착 반응기의 반응 금속원 공급장치.
The method according to claim 1,
The metal source supply unit 3 is located in the reactor 1 to perform the function of the metal source container (2) and the metal source supply unit (3) at the same time characterized in that the reactive metal source supply apparatus of the vertical hydride vapor deposition reactor .
청구항 2에 있어서,
상기 별도 금속원 공급부(3)의 입구측에는 내부 청정도를 위하여 진공용 수동밸브(11)가 상기 질소 공급 밸브(6)와 병렬로 설치된 것을 특징으로 하는 수직형 수소화물 기상 증착 반응기의 반응 금속원 공급장치.The method according to claim 2,
The reactive metal source supply of the vertical hydride vapor deposition reactor, characterized in that the vacuum manual valve 11 is installed in parallel with the nitrogen supply valve 6 on the inlet side of the separate metal source supply unit 3 for internal cleanliness. Device.
KR1020120075882A 2012-07-12 2012-07-12 Reaction metal supply units of vertical hydride vapor phase epitaxy reactor KR20140009638A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106191989A (en) * 2016-07-30 2016-12-07 东莞市中镓半导体科技有限公司 A kind of HVPE equipment gallium boat reactor
CN115074706A (en) * 2022-06-17 2022-09-20 北京北方华创微电子装备有限公司 Source bottle liquid supplementing method of semiconductor process equipment and semiconductor process equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106191989A (en) * 2016-07-30 2016-12-07 东莞市中镓半导体科技有限公司 A kind of HVPE equipment gallium boat reactor
CN115074706A (en) * 2022-06-17 2022-09-20 北京北方华创微电子装备有限公司 Source bottle liquid supplementing method of semiconductor process equipment and semiconductor process equipment
CN115074706B (en) * 2022-06-17 2023-09-08 北京北方华创微电子装备有限公司 Source bottle liquid supplementing method of semiconductor process equipment and semiconductor process equipment

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