CN213243931U - Broadband amplifier - Google Patents
Broadband amplifier Download PDFInfo
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- CN213243931U CN213243931U CN202021190251.8U CN202021190251U CN213243931U CN 213243931 U CN213243931 U CN 213243931U CN 202021190251 U CN202021190251 U CN 202021190251U CN 213243931 U CN213243931 U CN 213243931U
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Abstract
The embodiment of the application discloses a broadband amplifier, this broadband amplifier includes: the active bias circuit, the amplifying circuit connected with the active bias circuit, and the feedback circuit connected with the amplifying circuit; the signal input end is connected with the amplifying circuit and the feedback circuit, and the amplifying circuit is connected with the power supply and the signal output end; the active bias circuit is connected with the amplifying circuit and the feedback circuit. The broadband amplifier provided by the embodiment of the application can solve the problems of poor stability and low linearity of the broadband amplifier.
Description
Technical Field
The embodiment of the application relates to the technical field of microwaves, in particular to a broadband amplifier.
Background
The wideband amplifier is one of the important components of the rf receiving module, and generally, the wideband amplifier can amplify the signal received by the rf receiving module to improve the stability of the rf receiving module. Specifically, in the receiving channel, a broadband amplifier may be disposed at a subsequent stage of the low noise amplifier to amplify a signal output by the low noise amplifier; alternatively, in the transmit path, a wideband amplifier is provided at a pre-stage of the power amplifier to compensate for the power gain of the transmitted signal.
However, since the bias circuit of the conventional wideband amplifier is a resistor voltage dividing structure, when the environment of the wideband amplifier changes (for example, the temperature changes), the parameters of the transistor in the wideband amplifier also change with the temperature change, and the voltage dividing value generated in the resistor voltage dividing structure does not change with the temperature change, which may cause the static operating point of the wideband amplifier to deviate, thus resulting in poor stability and low linearity of the wideband amplifier.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application provides a broadband amplifier, which can solve the problems of poor stability and low linearity of the broadband amplifier.
In order to solve the technical problem, the embodiment of the application adopts the following technical scheme:
in a first aspect of the embodiments of the present application, there is provided a wideband amplifier, including: the circuit comprises an active bias circuit, an amplifying circuit connected with the active bias circuit, a feedback circuit connected with the amplifying circuit, a first capacitor, a first inductor and a fourth capacitor. The first end of the first capacitor is connected with the signal input end, the second end of the first capacitor is connected with the first end of the feedback circuit and the first end of the amplifying circuit, the second end of the feedback circuit is connected with the first end of the active bias circuit, and the third end of the feedback circuit is connected with the first end of the fourth capacitor, the first end of the first inductor, the fourth end and the fifth end of the amplifying circuit; the second end and the third end of the amplifying circuit are respectively connected with the second end and the third end of the active bias circuit; the second end of the fourth capacitor is connected with the signal output end, and the second end of the first inductor is connected with the power supply.
In an embodiment of the present application, a wideband amplifier includes: the circuit comprises an active bias circuit, an amplifying circuit connected with the active bias circuit, a feedback circuit connected with the amplifying circuit, a first capacitor, a first inductor and a fourth capacitor. The first end of the first capacitor is connected with the signal input end, the second end of the first capacitor is connected with the first end of the feedback circuit and the first end of the amplifying circuit, the second end of the feedback circuit is connected with the first end of the active bias circuit, and the third end of the feedback circuit is connected with the first end of the fourth capacitor, the first end of the first inductor, the fourth end and the fifth end of the amplifying circuit; the second end and the third end of the amplifying circuit are respectively connected with the second end and the third end of the active bias circuit; the second end of the fourth capacitor is connected with the signal output end, and the second end of the first inductor is connected with the power supply. Because the active bias circuit can replace a resistance voltage division bias circuit structure, the active bias circuit still has stable static working points at different temperatures, the stability of the circuit is enhanced under the condition of ensuring good noise coefficient and gain, and the linearity is improved at the same time.
Drawings
Fig. 1 is a schematic structural diagram of a broadband amplifier provided in an embodiment of the present application;
fig. 2 is a schematic circuit diagram of a wideband amplifier according to an embodiment of the present disclosure;
fig. 3 is a diagram of a simulation result of a circuit output 1dB compression point of a wideband amplifier according to an embodiment of the present application;
fig. 4 is a diagram of a simulation result of a third-order intermodulation point of a circuit output of a wideband amplifier according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
The terms "first" and "second," and the like, in the description and in the claims of the embodiments of the present application are used for distinguishing between different objects and not for describing a particular order of the objects. For example, the first and second coupling lines, etc. are used to distinguish between different media files, rather than to describe a particular order of the media files.
In the description of the embodiments of the present application, the meaning of "a plurality" means two or more unless otherwise specified. For example, a plurality of elements refers to two elements or more.
The term "and/or" herein is an association relationship describing an associated object, and means that there may be three relationships, for example, a display panel and/or a backlight, which may mean: there are three cases of a display panel alone, a display panel and a backlight at the same time, and a backlight alone. The symbol "/" herein denotes a relationship in which the associated object is or, for example, input/output denotes input or output.
In the embodiments of the present application, words such as "exemplary" or "for example" are used to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" or "e.g.," is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.
Currently, in the related art, the darlington structure has been widely used in a wide band amplifier because it can provide various excellent performances such as high gain, wide bandwidth, small implementation volume, and easy cascade connection with external components. The technologies for realizing the Darlington amplifier mainly comprise Si-BJT, SiGe and HBT, and the HBT occupies unique and important position in the circuit application with high speed, large dynamic range, low harmonic distortion and low phase noise. The stability of the amplifier is a very important criterion, which is a necessary condition for ensuring safe and reliable operation of the radio frequency circuit, and a circuit structure with good linearity is a part of the stability. The internal transconductance strongly affects the linearity of the whole circuit. The influence of transconductance on linearity is finally determined by a static operating point, which is essentially the influence of the static operating point on the linearity of the circuit, namely, stabilizing the bias operating point is important for improving the linearity of the circuit. In general, a conventional darlington bias is a resistance voltage division structure, when an ambient temperature changes, parameters of a transistor also change along with the change of the temperature, but a voltage division value generated in the resistance voltage division structure is kept unchanged, so that a static operating point deviates. Therefore, the traditional darlington amplifier has the problems of poor stability, low linearity and the like, and all the problems are technical problems which need to be solved urgently.
To solve the technical problems in the related art, an embodiment of the present application provides a wideband amplifier, including: the circuit comprises an active bias circuit, an amplifying circuit connected with the active bias circuit, a feedback circuit connected with the amplifying circuit, a first capacitor, a first inductor and a fourth capacitor. The first end of the first capacitor is connected with the signal input end, the second end of the first capacitor is connected with the first end of the feedback circuit and the first end of the amplifying circuit, the second end of the feedback circuit is connected with the first end of the active bias circuit, and the third end of the feedback circuit is connected with the first end of the fourth capacitor, the first end of the first inductor, the fourth end and the fifth end of the amplifying circuit; the second end and the third end of the amplifying circuit are respectively connected with the second end and the third end of the active bias circuit; the second end of the fourth capacitor is connected with the signal output end, and the second end of the first inductor is connected with the power supply. Because the active bias circuit can replace a resistance voltage division bias circuit structure, the active bias circuit still has stable static working points at different temperatures, the stability of the circuit is enhanced under the condition of ensuring good noise coefficient and gain, and the linearity is improved at the same time.
It can be understood that the following describes in detail a wideband amplifier provided in the embodiments of the present application with reference to the accompanying drawings.
An embodiment of the present application provides a wideband amplifier, where the wideband amplifier includes: the circuit comprises an active bias circuit, an amplifying circuit connected with the active bias circuit and a feedback circuit connected with the amplifying circuit.
In the embodiment of the application, the signal input end is connected with an amplifying circuit and a feedback circuit, and the amplifying circuit is connected with a power supply and a signal output end; the active bias circuit is connected with the amplifying circuit and the feedback circuit.
Optionally, in this embodiment, as shown in fig. 1, the wideband amplifier of this embodiment includes: an active bias circuit 10, an amplifier circuit 11 connected to the active bias circuit 10, a feedback circuit 12 connected to the amplifier circuit 11, and a first capacitor C1A first inductor L1And a fourth capacitance C4. Wherein the first capacitor C1Is connected to a signal input terminal RFin, the first capacitor C1Is connected to a first terminal of a feedback circuit 12 and a first terminal of the amplifying circuit 11, a second terminal of the feedback circuit 12 is connected to a first terminal of the active bias circuit 10, a third terminal of the feedback circuit 12 is connected to a fourth capacitor C4First terminal of, the first inductance L1Is connected with the fourth and fifth terminals of the amplifying circuit 11; the second terminal and the third terminal of the amplifying circuit 11 are respectively connected with the second terminal and the third terminal of the active bias circuit 10; the fourth capacitor C4Is connected to the signal output terminal RFout, the first inductor L1And a second terminal connected to a power supply Vcc.
It will be appreciated that the radio frequency signal enters the first capacitor C from the signal input terminal RFin1The input is amplified by a fourth capacitor C after passing through an amplifying circuit 11 configured by an active bias circuit 10 and a feedback circuit 124And (6) outputting.
Optionally, in this embodiment of the application, the sixth terminal of the amplifying circuit 11 is grounded.
In an embodiment of the present application, there is provided a wideband amplifier, including: the circuit comprises an active bias circuit, an amplifying circuit connected with the active bias circuit, a feedback circuit connected with the amplifying circuit, a first capacitor, a first inductor and a fourth capacitor. The first end of the first capacitor is connected with the signal input end, the second end of the first capacitor is connected with the first end of the feedback circuit and the first end of the amplifying circuit, the second end of the feedback circuit is connected with the first end of the active bias circuit, and the third end of the feedback circuit is connected with the first end of the fourth capacitor, the first end of the first inductor, the fourth end and the fifth end of the amplifying circuit; the second end and the third end of the amplifying circuit are respectively connected with the second end and the third end of the active bias circuit; the second end of the fourth capacitor is connected with the signal output end, and the second end of the first inductor is connected with the power supply. Because the active bias circuit can replace a resistance voltage division bias circuit structure, the active bias circuit still has stable static working points at different temperatures, the stability of the circuit is enhanced under the condition of ensuring good noise coefficient and gain, and the linearity is improved at the same time.
Optionally, in this embodiment of the application, with reference to fig. 1, as shown in fig. 2, the active bias circuit 10 includes: third transistor Q3And a third transistor Q3Connected fourth resistor R4And a fourth resistor R4Third capacitor C connected3And a third transistor Q3Connected third resistor R3。
In the embodiment of the present application, the first terminal of the active bias circuit 10 and the third transistor Q3Is connected to the collector of the third transistor Q3Is transmitted byPole and third resistor R3Is connected to the first terminal of the third resistor R3Second terminal and third capacitor C3Is connected to a third terminal of the active bias circuit 10, and a third capacitor C3First terminal of and third transistor Q3Base electrode of, fourth resistor R4Is connected to the first terminal of the fourth resistor R4Is connected to a second terminal of the active bias circuit 10.
Optionally, in this embodiment of the application, with reference to fig. 1, as shown in fig. 2, the feedback circuit 12 includes: second capacitor C2And a second capacitor C2Connected first resistor R1And a first resistor R1Connected second resistor R2。
In the embodiment of the present application, the second resistor R is2Is connected to a first terminal of the feedback circuit 12, a second resistor R2And the second end of the feedback circuit 12, the first resistor R1Second terminal, second capacitor C2Is connected with the second end of the first connecting rod; the first resistor R1First terminal and second capacitor C2And a third terminal of feedback circuit 12.
Optionally, in this embodiment of the application, with reference to fig. 1, as shown in fig. 2, the amplifying circuit 11 includes: a first transistor Q1And a first transistor Q1Connected sixth resistor R6And a sixth resistor R6Connected fifth resistor R5And a sixth resistor R6Connected second transistor Q1And a fifth resistor R5Connected seventh resistor R7。
In the embodiment of the present application, the first transistor Q is1Is connected to a first terminal of an amplifying circuit 11, the first transistor Q1Is connected to the fourth terminal of the amplifying circuit 11, the first transistor Q1And the second end of the amplifying circuit 11, and a sixth resistor R6First terminal, fifth resistor R5Is connected to the first terminal of the sixth resistor R6Second terminal of and second transistor Q2Is connected to the base of the second transistor Q2Is connected to the fifth terminal of the amplifying circuit 11, the second transistor Q2Emitter and seventh resistor R7Is connected to the first terminal of the seventh resistor R7Second terminal and fifth resistor R5The second terminal of the amplifying circuit 11, the third terminal of the amplifying circuit 11 and the sixth terminal of the amplifying circuit 11.
Optionally, in this embodiment of the application, the first transistor Q is described above1A second transistor Q2And a third transistor Q3Are all BJT tubes.
In the embodiment of the application, when the environmental temperature changes, the first transistor Q1Is caused to a slight increment of Δ i such that the first transistor Q is caused to operate1The current of the emitter is increased, the delta i is shunted through the three branches to obtain more tiny increment which is recorded as delta i1, and the delta i1 passes through the point transistor Q3Is then amplified by beta times, the third resistor R3The current increment is beta delta i1 due to the second resistor R2The upper current is much smaller than the first resistor R1So that the first resistor R1Current increment and third resistor R3The current increment is approximately equal, the first resistor R1Increase in voltage drop, resulting in the first transistor Q1The base voltage of (a) becomes small, so that the base current decreases because Δ ic ═ β Δ ib, so that the first transistor Q is caused to operate1The collector current is reduced, so that the static working point of the circuit is stabilized, the linearity of the circuit is improved, and the stability is further improved. If the active bias circuit structure does not exist, but the common resistor voltage-dividing bias circuit structure is used, the first transistor Q1When there is a variation Δ i in the emitter current, the first transistor Q remains unchanged due to the bias voltage obtained by the resistor-divider bias circuit structure1The base voltage of the transistor also remains unchanged, so that the compensation effect of balance is not achieved.
Compared with the amplifier with the traditional resistor voltage division biasing circuit structure, the temperature coefficient is good, an external system is not required to additionally provide temperature compensation, the linearity of the circuit is improved, and meanwhile the stability is enhanced. As shown in fig. 3 and 4, the advantages of high linearity, high stability, large dynamic range, etc. are achieved, the contradiction between the power consumption and the performances of linearity, stability, etc. of the broadband amplifier circuit is solved, and the practicability of the broadband amplifier circuit is greatly improved.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The embodiments of the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the above-mentioned embodiments, which are only illustrative and not restrictive, and those skilled in the art can make many forms without departing from the spirit and scope of the present invention.
Claims (7)
1. A wideband amplifier, characterized in that it comprises: the circuit comprises an active bias circuit, an amplifying circuit connected with the active bias circuit and a feedback circuit connected with the amplifying circuit;
the signal input end is connected with the amplifying circuit and the feedback circuit, and the amplifying circuit is connected with the power supply and the signal output end; the active bias circuit is connected with the amplifying circuit and the feedback circuit.
2. The wideband amplifier according to claim 1, further comprising: the first capacitor, the first inductor and the fourth capacitor;
the first end of the first capacitor is connected with a signal input end, the second end of the first capacitor is connected with the first end of the feedback circuit and the first end of the amplifying circuit, the second end of the feedback circuit is connected with the first end of the active bias circuit, and the third end of the feedback circuit is connected with the first end of the fourth capacitor, the first end of the first inductor, the fourth end of the amplifying circuit and the fifth end of the amplifying circuit; the second end and the third end of the amplifying circuit are respectively connected with the second end and the third end of the active bias circuit; and the second end of the fourth capacitor is connected with the signal output end, and the second end of the first inductor is connected with a power supply.
3. The wideband amplifier of claim 1, where the sixth terminal of the amplification circuit is connected to ground.
4. The wideband amplifier of any of claims 1 to 3, where the active bias circuit comprises: a third transistor, a fourth resistor connected to the third transistor, a third capacitor connected to the fourth resistor, and a third resistor connected to the third transistor;
the first end of the active bias circuit is connected with the collector of the third transistor, the emitter of the third transistor is connected with the first end of the third resistor, the second end of the third resistor is connected with the second end of the third capacitor and the third end of the active bias circuit, the first end of the third capacitor is connected with the base of the third transistor and the first end of the fourth resistor, and the second end of the fourth resistor is connected with the second end of the active bias circuit.
5. The wideband amplifier of claim 4, where the feedback circuit comprises: the circuit comprises a second capacitor, a first resistor connected with the second capacitor and a second resistor connected with the first resistor;
the first end of the second resistor is connected with the first end of the feedback circuit, and the second end of the second resistor is connected with the second end of the feedback circuit, the second end of the first resistor and the second end of the second capacitor; and the first end of the first resistor is connected with the first end of the second capacitor and the third end of the feedback circuit.
6. The wideband amplifier of claim 5, where the amplification circuit comprises: the circuit comprises a first transistor, a sixth resistor connected with the first transistor, a fifth resistor connected with the sixth resistor, a second transistor connected with the sixth resistor, and a seventh resistor connected with the fifth resistor;
the base of the first transistor is connected with the first end of the amplifying circuit, the collector of the first transistor is connected with the fourth end of the amplifying circuit, the emitter of the first transistor is connected with the second end of the amplifying circuit, the first end of the sixth resistor and the first end of the fifth resistor, the second end of the sixth resistor is connected with the base of the second transistor, the collector of the second transistor is connected with the fifth end of the amplifying circuit, the emitter of the second transistor is connected with the first end of the seventh resistor, and the second end of the seventh resistor is connected with the second end of the fifth resistor, the third end of the amplifying circuit and the sixth end of the amplifying circuit.
7. The wideband amplifier according to claim 6, where the first transistor, the second transistor and the third transistor are all BJT transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021190251.8U CN213243931U (en) | 2020-06-23 | 2020-06-23 | Broadband amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021190251.8U CN213243931U (en) | 2020-06-23 | 2020-06-23 | Broadband amplifier |
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| CN213243931U true CN213243931U (en) | 2021-05-18 |
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| CN202021190251.8U Active CN213243931U (en) | 2020-06-23 | 2020-06-23 | Broadband amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682857A (en) * | 2020-06-23 | 2020-09-18 | 西安博瑞集信电子科技有限公司 | Broadband amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682857A (en) * | 2020-06-23 | 2020-09-18 | 西安博瑞集信电子科技有限公司 | Broadband amplifier |
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Address after: Building 12, Hard Technology Enterprise Community, No. 3000 Biyuan Second Road, High tech Zone, Xi'an City, Shaanxi Province, 710065 Patentee after: Borui Jixin (Xi'an) Electronic Technology Co.,Ltd. Address before: 22nd floor, East Building, block B, Tengfei Kehui City, 88 Tiangu 7th Road, Yuhua Street office, high tech Zone, Xi'an, Shaanxi 710000 Patentee before: XI'AN BORUI JIXIN ELECTRONIC TECHNOLOGY Co.,Ltd. |