CN213126603U - Diamond diaphragm for silicon wafer preparation - Google Patents
Diamond diaphragm for silicon wafer preparation Download PDFInfo
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- CN213126603U CN213126603U CN202022082924.4U CN202022082924U CN213126603U CN 213126603 U CN213126603 U CN 213126603U CN 202022082924 U CN202022082924 U CN 202022082924U CN 213126603 U CN213126603 U CN 213126603U
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- diamond diaphragm
- diamond
- silicon wafer
- diaphragm
- monocrystalline silicon
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Abstract
The utility model relates to the technical field of silicon wafer preparation, in particular to a diamond diaphragm for silicon wafer preparation, which comprises a monocrystalline silicon wafer, wherein the top of the monocrystalline silicon wafer is provided with a first diamond diaphragm, the middle part of the top of the first diamond diaphragm is provided with a temperature sensor, the bottom of the monocrystalline silicon wafer is provided with a second diamond diaphragm, the bottom of the second diamond diaphragm is also provided with a U-shaped plate, and the middle part of the bottom of the inner wall of the U-shaped plate is provided with a miniature electronic fan; the PCB board is also included. This a diamond diaphragm for silicon chip preparation encapsulates the integrated circuit on monocrystalline silicon piece surface through first diamond diaphragm to cooperation second diamond diaphragm can play effectual heat dissipation to monocrystalline silicon piece, when monocrystalline silicon piece's temperature was too high, through temperature sensor with signal of telecommunication input PCB board, and open through the miniature electronic fan of PCB board control, dispel the heat fast to second diamond diaphragm.
Description
Technical Field
The utility model relates to a silicon chip preparation technical field specifically is a diamond diaphragm for silicon chip preparation.
Background
After a silicon wafer is produced, when the silicon wafer is required to be used for circuit integration, the silicon wafer needs to be further prepared and processed, after an integrated circuit is arranged on the surface of the silicon wafer, the silicon wafer needs to be packaged, and the integrated circuit can generate heat during operation, so that the heat dissipation of the silicon wafer needs to be considered during packaging.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a diamond diaphragm for silicon chip preparation to propose integrated circuit can produce the heat at the during operation in solving above-mentioned background art, consequently need consider the heat dissipation of silicon chip when the encapsulation, present encapsulation adopts frock plastics, the poor problem of its heat conductivity mostly.
In order to achieve the above object, the utility model provides a following technical scheme:
a diamond diaphragm for preparing silicon wafers comprises a monocrystalline silicon wafer, wherein a P-type wiring end and an N-type wiring end are respectively arranged at the bottom of the monocrystalline silicon wafer and close to the two ends of the front side, the top of the monocrystalline silicon piece is provided with a first diamond diaphragm, the middle part of the top of the first diamond diaphragm is provided with a temperature sensor, the bottom of the first diamond diaphragm is provided with a rectangular groove, the bottom of the first diamond diaphragm and the positions close to the middle parts of the four side edges are provided with cylindrical grooves, a second diamond diaphragm is arranged at the bottom of the monocrystalline silicon piece, positioning rods are vertically arranged on the surface of the second diamond diaphragm and close to the middle parts of the four side edges, four corners of the bottom of the second diamond diaphragm are provided with mounting columns, the bottom of the second diamond diaphragm is also provided with a U-shaped plate, and the middle part of the bottom of the inner wall of the U-shaped plate is provided with a miniature electronic fan; still include with the PCB board that the erection column bonded, temperature sensor, miniature electronic fan, P type wiring end and N type wiring end all divide respectively through the wire with PCB board electric connection.
Preferably, when the first diamond diaphragm is mounted with a monocrystalline silicon piece, the top of the monocrystalline silicon piece is located at a position close to the top of the inner wall of the rectangular groove.
Preferably, the bottom of the monocrystalline silicon piece is completely attached to the surface of the second diamond film piece.
Preferably, the end part of the positioning rod is positioned in the cylindrical groove, and the positioning rod is bonded with the first diamond membrane.
Preferably, a plurality of strip-shaped through holes which are arranged at equal intervals are formed in the positions, close to the two ends, of the bottom of the inner wall of the U-shaped plate.
Preferably, the middle part of the bottom of the inner wall of the U-shaped plate is provided with a rectangular through groove, and the rectangular through groove is positioned right below the air inlet end of the miniature electronic fan.
Preferably, the bottom ends of the P-type terminal and the N-type terminal penetrate through the surface of the second diamond diaphragm.
Compared with the prior art, the beneficial effects of the utility model are that:
this a diamond diaphragm for silicon chip preparation, encapsulate the integrated circuit on monocrystalline silicon piece surface through first diamond diaphragm, and cooperate the second diamond diaphragm can play effectual heat dissipation to monocrystalline silicon piece, when monocrystalline silicon piece's temperature was too high, through temperature sensor with signal of telecommunication input PCB board, and open through the miniature electronic fan of PCB board control, dispel the heat fast to second diamond diaphragm, and the input current of PCB board through control P type wiring end and N type wiring end reduces the power among the integrated circuit, thereby carry out rapid cooling to monocrystalline silicon piece and handle.
Drawings
Fig. 1 is a schematic view of an overall first viewing angle structure of the present invention;
fig. 2 is a schematic view of an overall second viewing angle structure of the present invention;
FIG. 3 is a schematic view of an assembly structure of the first diamond diaphragm, the monocrystalline silicon piece and the second diamond diaphragm;
fig. 4 is an enlarged schematic view of the structure at a in fig. 3 according to the present invention;
fig. 5 is a schematic view of the assembly structure of the U-shaped plate and the micro electronic fan according to the present invention;
fig. 6 is a schematic view of a U-shaped plate structure according to the present invention.
In the figure: the device comprises a monocrystalline silicon wafer 1, a P-type wiring terminal 10, an N-type wiring terminal 11, a first diamond diaphragm 2, a rectangular groove 20, a cylindrical groove 21, a second diamond diaphragm 3, a positioning rod 30, a mounting column 31, a temperature sensor 4, a U-shaped plate 5, a strip-shaped through hole 50, a rectangular through groove 51, a PCB 6 and a miniature electronic fan 7.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and to simplify the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
Referring to fig. 1-6, the present invention provides a technical solution:
a diamond diaphragm for preparing a silicon wafer comprises a monocrystalline silicon wafer 1, wherein a P-type wiring end 10 and an N-type wiring end 11 are respectively arranged at the bottom of the monocrystalline silicon wafer 1 and close to two ends of the front side, a first diamond diaphragm 2 is arranged at the top of the monocrystalline silicon wafer 1, an integrated circuit on the surface of the monocrystalline silicon wafer 1 is packaged through the first diamond diaphragm 2, a temperature sensor 4 is arranged in the middle of the top of the first diamond diaphragm 2, a rectangular groove 20 is formed in the bottom of the first diamond diaphragm 2, cylindrical grooves 21 are formed in the bottom of the first diamond diaphragm 2 and close to the middle of four side edges, a second diamond diaphragm 3 is arranged at the bottom of the monocrystalline silicon wafer 1 and conducts heat to the bottom of the monocrystalline silicon wafer 1, positioning rods 30 are vertically arranged on the surface of the second diamond diaphragm 3 and close to the middle of the four side edges, mounting columns 31 are arranged at four edges of the bottom of the second diamond diaphragm 3, the bottom of the second diamond diaphragm 3 is also provided with a U-shaped plate 5 for mounting a micro electronic fan 7, and the middle part of the bottom of the inner wall of the U-shaped plate 5 is provided with the micro electronic fan 7; still include the PCB board 6 that bonds with erection column 31, temperature sensor 4, miniature electronic fan 7, P type wiring end 10 and N type wiring end 11 are equallyd divide and are do not passed through wire and 6 electric connection of PCB board, with signal of telecommunication input PCB board 6 through temperature sensor 4, and open through PCB board 6 control miniature electronic fan 7, dispel the heat fast to second diamond diaphragm 3, and PCB board 6 reduces the power among the integrated circuit through the input current of control P type wiring end 10 and N type wiring end 11, thereby carry out rapid cooling to monocrystalline silicon piece 1 and handle.
In this embodiment, when the first diamond diaphragm 2 and the monocrystalline silicon piece 1 are mounted, the top of the monocrystalline silicon piece 1 is located at a position close to the top of the inner wall of the rectangular groove 20, so that the first diamond diaphragm 2 and the integrated circuit are prevented from being extruded.
Specifically, the bottom of the monocrystalline silicon piece 1 is completely attached to the surface of the second diamond diaphragm 3, so that the second diamond diaphragm 3 can rapidly guide out the heat of the monocrystalline silicon piece 1.
Further, the end of the positioning rod 30 is located in the cylindrical groove 21, and the positioning rod 30 is bonded to the first diamond diaphragm 2 to fix the positions of the first diamond diaphragm 2 and the second diamond diaphragm 3.
Further, a plurality of strip-shaped through holes 50 which are arranged at equal intervals are formed in the positions, close to the two ends, of the bottom of the inner wall of the U-shaped plate 5, and the weight of the U-shaped plate 5 is reduced.
Furthermore, a rectangular through groove 51 is formed in the middle of the bottom of the inner wall of the U-shaped plate 5, and the rectangular through groove 51 is located right below the air inlet end of the miniature electronic fan 7, so that the miniature electronic fan 7 can work smoothly and quickly form air flow.
In addition, the bottom ends of the P-type terminal 10 and the N-type terminal 11 penetrate through the surface of the second diamond diaphragm 3, so that the connection of a lead wire with the P-type terminal 10 and the N-type terminal 11 is facilitated.
When the diamond diaphragm for preparing the silicon wafer is used, a user places the monocrystalline silicon wafer 1 on the surface of the second diamond diaphragm 3, then coats the end part of the positioning rod 30 with adhesive, sleeves the rectangular groove 20 of the first diamond diaphragm 2 on the top of the monocrystalline silicon wafer 1, and inserts the cylindrical groove 21 of the first diamond diaphragm 2 into the positioning rod 30, so that the positions of the first diamond diaphragm 2 and the second diamond diaphragm 3 are fixed; when the temperature sensor 4 detects that the temperature of the first diamond diaphragm 2 is too high, the temperature of the monocrystalline silicon piece 1 is indicated to be higher, at the moment, the temperature sensor 4 inputs an electric signal into the PCB 6 through a conducting wire, the PCB 6 controls the micro electronic fan 7 to be started, and meanwhile, the power in the integrated circuit is reduced by controlling the input currents of the P-type wiring terminal 10 and the N-type wiring terminal 11, so that the monocrystalline silicon piece 1 can be rapidly cooled, and the integrated circuit is protected.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It should be understood by those skilled in the art that the present invention is not limited by the above embodiments, and the description in the above embodiments and the description is only preferred examples of the present invention, and is not intended to limit the present invention, and that the present invention can have various changes and modifications without departing from the spirit and scope of the present invention, and these changes and modifications all fall into the scope of the claimed invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. A diamond membrane for silicon wafer production, comprising a monocrystalline silicon wafer (1), characterized in that: the structure is characterized in that a P-type wiring end (10) and an N-type wiring end (11) are respectively arranged at the bottom of the monocrystalline silicon piece (1) and positions close to the two ends of the front side, a first diamond diaphragm (2) is arranged at the top of the monocrystalline silicon piece (1), a temperature sensor (4) is arranged at the middle of the top of the first diamond diaphragm (2), a rectangular groove (20) is formed in the bottom of the first diamond diaphragm (2), cylindrical grooves (21) are formed in the bottom of the first diamond diaphragm (2) and positions close to the middle of the four side edges, a second diamond diaphragm (3) is arranged at the bottom of the monocrystalline silicon piece (1), positioning rods (30) are vertically arranged on the surface of the second diamond diaphragm (3) and positions close to the middle of the four side edges, mounting columns (31) are arranged at the four edge positions of the bottom of the second diamond diaphragm (3), and a U-shaped plate (5) is further arranged at the bottom of, the middle part of the bottom of the inner wall of the U-shaped plate (5) is provided with a miniature electronic fan (7); still include with PCB board (6) that erection column (31) bonded, temperature sensor (4), miniature electronic fan (7), P type wiring end (10) and N type wiring end (11) equally divide respectively through the wire with PCB board (6) electric connection.
2. The diamond diaphragm for silicon wafer fabrication according to claim 1, wherein: when the first diamond diaphragm (2) and the monocrystalline silicon piece (1) are installed, the top of the monocrystalline silicon piece (1) is located at a position close to the top of the inner wall of the rectangular groove (20).
3. The diamond diaphragm for silicon wafer fabrication according to claim 1, wherein: the bottom of the monocrystalline silicon piece (1) is completely attached to the surface of the second diamond diaphragm (3).
4. The diamond diaphragm for silicon wafer fabrication according to claim 1, wherein: the end part of the positioning rod (30) is positioned in the cylindrical groove (21), and the positioning rod (30) is bonded with the first diamond membrane (2).
5. The diamond diaphragm for silicon wafer fabrication according to claim 1, wherein: the bottom of the inner wall of the U-shaped plate (5) and the positions close to the two ends are provided with a plurality of strip-shaped through holes (50) which are distributed at equal intervals.
6. The diamond diaphragm for silicon wafer fabrication according to claim 1, wherein: the middle part of the bottom of the inner wall of the U-shaped plate (5) is provided with a rectangular through groove (51), and the rectangular through groove (51) is positioned under the air inlet end of the miniature electronic fan (7).
7. The diamond diaphragm for silicon wafer fabrication according to claim 1, wherein: the bottom ends of the P-type terminal (10) and the N-type terminal (11) penetrate through the surface of the second diamond diaphragm (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022082924.4U CN213126603U (en) | 2020-09-22 | 2020-09-22 | Diamond diaphragm for silicon wafer preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022082924.4U CN213126603U (en) | 2020-09-22 | 2020-09-22 | Diamond diaphragm for silicon wafer preparation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213126603U true CN213126603U (en) | 2021-05-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022082924.4U Active CN213126603U (en) | 2020-09-22 | 2020-09-22 | Diamond diaphragm for silicon wafer preparation |
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| CN (1) | CN213126603U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117712057A (en) * | 2024-02-06 | 2024-03-15 | 成都汉芯国科集成技术有限公司 | Chip packaging structure and packaging method for multistage diamond radiation overload resistance |
-
2020
- 2020-09-22 CN CN202022082924.4U patent/CN213126603U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117712057A (en) * | 2024-02-06 | 2024-03-15 | 成都汉芯国科集成技术有限公司 | Chip packaging structure and packaging method for multistage diamond radiation overload resistance |
| CN117712057B (en) * | 2024-02-06 | 2024-05-10 | 成都汉芯国科集成技术有限公司 | Chip packaging structure and packaging method for multistage diamond radiation overload resistance |
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Address after: 324300 Wanyuan Road 5, Hua Bu Town, Kaihua County, Quzhou, Zhejiang Patentee after: Zhejiang Haina Semiconductor Co.,Ltd. Patentee after: JIANG University OF TECHNOLOGY Address before: 324300 Wanyuan Road 5, Hua Bu Town, Kaihua County, Quzhou, Zhejiang Patentee before: ZHEJIANG HAINA SEMICONDUCTOR Co.,Ltd. Patentee before: JIANG University OF TECHNOLOGY |