CN212955435U - Doping coil for improving resistivity uniformity of zone-melting silicon single crystal - Google Patents
Doping coil for improving resistivity uniformity of zone-melting silicon single crystal Download PDFInfo
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- CN212955435U CN212955435U CN202021311464.1U CN202021311464U CN212955435U CN 212955435 U CN212955435 U CN 212955435U CN 202021311464 U CN202021311464 U CN 202021311464U CN 212955435 U CN212955435 U CN 212955435U
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- coil
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- cooling water
- cutting
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- 239000013078 crystal Substances 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 16
- 239000010703 silicon Substances 0.000 title claims abstract description 16
- 238000004857 zone melting Methods 0.000 title claims abstract description 11
- 238000007664 blowing Methods 0.000 claims abstract description 18
- 238000005520 cutting process Methods 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims abstract description 13
- 239000000498 cooling water Substances 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides an improve doping coil of zone-melting silicon single crystal resistivity homogeneity, including coil body, condenser tube, copper pipe, cross joint-cutting, the coil body has the ring structure of coil eye for the center, and the surface set up with the coil eye is the cross joint-cutting of surface about lining up at center, and the long one of other three joint-cutting of wherein comparing is main seam, main seam extends to outside the coil body, with the flange joint of the electrode is connected outside the coil body, condenser tube imbeds in the skeleton of coil body, the copper pipe traversing condenser tube, and be equipped with the logical groove of blowing in the inside position department with three joint-cutting one-to-one in addition of coil body. The utility model has the advantages that: the doped gas is directly conveyed to the position where the single crystal is melted, and due to the reason that the water channel of the coil is cooled, the gas cannot be decomposed in the coil to cause the abnormal condition of the conveyed gas, and the doped gas can be efficiently utilized.
Description
Technical Field
The utility model belongs to zone-melting silicon single crystal field especially relates to an improve doping coil of zone-melting silicon single crystal resistivity homogeneity.
Background
The float-zone silicon single crystal is a main raw material for manufacturing power electronic devices. The zone-melting silicon single crystal has the characteristics of short service life, small crystal lattice damage, short production period, low production cost and the like. With the development of electronic information and photovoltaic industry in modern society, higher requirements are put forward on the perfectness of silicon crystals and the high uniformity of electrical parameters. The difference exists between every stove of zone-melting gas doping single crystal section resistivity, and the resistivity can not realize stably controllable, and the cross-section resistivity distributes unevenly, and doping efficiency is lower, causes the waste of doping gas, and the current mode of production processing degree of difficulty is big, and the machining precision is high, and gas circuit hole and water route distance are too close, lead to the water route wall thin, the easy emergence accident of leaking, because the gas circuit reason, can lead to two rectangular gas pockets to appear in the coil back, change current coil structure.
Disclosure of Invention
In view of the above, the present invention is directed to a doped coil for improving the resistivity uniformity of a float-zone silicon single crystal, so as to solve the above-mentioned problems.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
a doped coil for improving resistivity uniformity of zone-melting silicon single crystals comprises a coil body, a cooling water pipe, a copper pipe and a cross joint, wherein the coil body is of a circular structure with a coil eye at the center, the surface of the coil body is provided with the cross joint which is centered on the coil eye and penetrates through the upper surface and the lower surface, one of the three joint lengths is a main joint, the main joint extends out of the coil body and is connected with a flange of an electrode connected with the outer side of the coil body, the cooling water pipe is embedded into a framework of the coil body, the copper pipe transversely penetrates through the cooling water pipe, air blowing through grooves are arranged in the coil body at positions corresponding to the other three joint lengths one by one, one end of each air blowing through groove is communicated with the corresponding joint length, the other end of each air blowing through groove extends to the outermost edge of the upper half part of the coil body, and an inner cavity hollow structure, and a blowing through groove is formed in the position, corresponding to the joint cutting, on the rightmost side of the coil body, a sealing part is arranged at the outer end of the blowing through groove, and two ends of the copper pipe are respectively welded on two sides of the cooling water pipe.
Furthermore, the upper surface of the coil body is provided with an annular step which is sunken towards the interior of the coil body, and the upper surface of the step is a plane.
Furthermore, one end of the bottom of the step is connected with the upper edge of the inner circle of the coil body to form a downward inclined plane.
Furthermore, the cooling water pipes are annularly distributed in the coil body.
Furthermore, the coil body is of a single-turn flat plate structure.
Compared with the prior art, the utility model discloses following advantage has:
a improve doping coil of zone-melting silicon single crystal resistivity homogeneity, punch to coil inner chamber hollow structure in through at the epitaxial fluting of coil, the grooving corresponding position on coil body rightmost side leaves the logical groove of blowing, the logical groove outer end of blowing is equipped with the sealing, adopts the mode that the copper pipe passed the water route to realize directly carrying the doping gas and melting single crystal department, and because the reason of coil water route cooling, gaseous can not decompose the condition that causes the conveying gas unusual in the coil, can realize utilizing the more efficient of doping gas to can realize that monocrystalline silicon resistivity is timely, controllable.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the invention without limitation. In the drawings:
FIG. 1 is a front view of a doped coil of the present invention for improving resistivity uniformity of a float-zone silicon single crystal;
fig. 2 is a cross-sectional view of a doped coil for improving resistivity uniformity of a float-zone silicon single crystal in accordance with the present invention.
Description of reference numerals:
1. a coil body; 11. a coil eye; 12. cutting a joint in a cross shape; 13. the coil inner cavity is of a hollow structure; 2. a cooling water pipe; 3. a copper pipe; 31. a sealing part; 4. and (4) a flange.
Detailed Description
It should be noted that the embodiments and features of the embodiments of the present invention may be combined with each other without conflict.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings, which are merely for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be construed as limiting the invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, the meaning of "a plurality" is two or more unless otherwise specified.
In the description of the invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted", "connected" and "connected" are to be construed broadly, e.g. as being fixed or detachable or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the creation of the present invention can be understood by those of ordinary skill in the art through specific situations.
The invention will be described in detail with reference to the following embodiments with reference to the attached drawings.
As shown in fig. 1 to 2, a doped coil for improving resistivity uniformity of zone-melting silicon single crystal comprises a coil body 1, a cooling water pipe 2, a copper pipe 3 and a cross-shaped cutting seam 12, wherein the coil body 1 is a circular structure with a coil eye 11 at the center, the surface of the coil body is provided with the cross-shaped cutting seam 12 which is arranged on the center of the coil eye 11 and penetrates through the upper surface and the lower surface, one of the other three cutting seams is a main seam, the main seam extends out of the coil body 1 and is connected with a flange 4 of a connection electrode at the outer side of the coil body 1, the cooling water pipe 2 is embedded into a framework of the coil body 1, the copper pipe 3 transversely penetrates through the cooling water pipe 2, air blowing through grooves are arranged at positions corresponding to the other three cutting seams one by one in the coil body 1, one end of each air blowing through groove is communicated with the corresponding cutting seam, and the other end, an inner cavity hollow structure 13 is arranged between the outermost edge of the upper half part of the coil body 1 and the cooling water pipe 2, an air blowing through groove is arranged at the position corresponding to the joint cut at the rightmost side of the coil body 1, a sealing part 31 is arranged at the outer end of the air blowing through groove, and two ends of the copper pipe 3 are respectively welded at two sides of the cooling water pipe 2.
The upper surface of the coil body 1 is provided with an annular step which is sunken towards the interior of the coil body 1, and the upper surface of the step is a plane.
One end of the bottom of the step is connected with the upper edge of the inner circle of the coil body 1 to form an inclined plane which inclines downwards.
The cooling water pipes 2 are annularly distributed in the coil body 1.
The coil body 1 is of a single-turn flat plate structure.
The working process of the embodiment is as follows:
opening the sealing part 31, starting mixed gas of doping gas and inert gas, entering the coil inner cavity hollow structure 13 through the sealing part, directly and horizontally blowing the mixed gas to the liquid level of a melting zone through the blowing through grooves at the cutting seams of the three short sides around the coil eye 11, directly conveying the doping gas to the melting single crystal, doping the single crystal, and directly acting the doping gas on the melting part, thereby improving the doping efficiency of the silicon single crystal.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the invention, so that any modifications, equivalents, improvements and the like, which are within the spirit and principle of the present invention, should be included in the scope of the present invention.
Claims (5)
1. A doped coil for improving the resistivity uniformity of zone-melting silicon single crystal is characterized in that: the coil comprises a coil body (1), a cooling water pipe (2), a copper pipe (3) and a cross-shaped cutting seam (12), wherein the coil body (1) is of a circular ring structure with a coil eye (11) at the center, the surface of the coil body is provided with the cross-shaped cutting seam (12) which is arranged on the center of the coil eye (11) and penetrates through the upper surface and the lower surface, one of the other three cutting seams is a main seam, the main seam extends out of the coil body (1) and is connected with a flange (4) of an electrode connected with the outer side of the coil body (1), the cooling water pipe (2) is embedded into a framework of the coil body (1), the copper pipe (3) transversely penetrates through the cooling water pipe (2), air blowing through grooves are arranged at positions in the coil body (1) corresponding to the other three cutting seams one by one, one end of each air blowing through groove is communicated with the corresponding cutting seam, and the other end of, an inner cavity hollow structure (13) is arranged between the outermost edge of the upper half part of the coil body (1) and the cooling water pipe (2), a blowing through groove is formed in the position, corresponding to the cutting seam, of the rightmost side of the coil body (1), a sealing part (31) is arranged at the outer end of the blowing through groove, and two ends of the copper pipe (3) are welded to two sides of the cooling water pipe (2) respectively.
2. The doped coil of claim 1 wherein the doped coil is formed by a process selected from the group consisting of: the coil is characterized in that an annular step which is sunken towards the interior of the coil body (1) is arranged on the upper surface of the coil body (1), and the upper surface of the step is a plane.
3. The doped coil of claim 2, wherein the doped coil is formed by: one end of the bottom of the step is connected with the upper edge of the inner circle of the coil body (1) to form a downward inclined plane.
4. The doped coil of claim 1 wherein the doped coil is formed by a process selected from the group consisting of: the cooling water pipes (2) are annularly distributed in the coil body (1).
5. The doped coil of claim 1 wherein the doped coil is formed by a process selected from the group consisting of: the coil body (1) is of a single-turn flat plate structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021311464.1U CN212955435U (en) | 2020-07-07 | 2020-07-07 | Doping coil for improving resistivity uniformity of zone-melting silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021311464.1U CN212955435U (en) | 2020-07-07 | 2020-07-07 | Doping coil for improving resistivity uniformity of zone-melting silicon single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212955435U true CN212955435U (en) | 2021-04-13 |
Family
ID=75391980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021311464.1U Active CN212955435U (en) | 2020-07-07 | 2020-07-07 | Doping coil for improving resistivity uniformity of zone-melting silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212955435U (en) |
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2020
- 2020-07-07 CN CN202021311464.1U patent/CN212955435U/en active Active
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |