CN212934611U - 显示装置 - Google Patents

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Publication number
CN212934611U
CN212934611U CN202022360540.4U CN202022360540U CN212934611U CN 212934611 U CN212934611 U CN 212934611U CN 202022360540 U CN202022360540 U CN 202022360540U CN 212934611 U CN212934611 U CN 212934611U
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CN
China
Prior art keywords
light emitting
light
emitting element
layer
type semiconductor
Prior art date
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Active
Application number
CN202022360540.4U
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English (en)
Chinese (zh)
Inventor
张锺敏
金彰渊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/075,636 external-priority patent/US11810944B2/en
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
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Publication of CN212934611U publication Critical patent/CN212934611U/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/34—Active-matrix LED displays characterised by the geometry or arrangement of subpixels within a pixel, e.g. relative disposition of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/852—Encapsulations
    • H10H29/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/962—Stacked configurations of light-emitting semiconductor components or devices, the components or devices emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Devices (AREA)
CN202022360540.4U 2019-10-23 2020-10-21 显示装置 Active CN212934611U (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962924737P 2019-10-23 2019-10-23
US62/924,737 2019-10-23
US17/075,636 2020-10-20
US17/075,636 US11810944B2 (en) 2019-10-23 2020-10-20 LED display apparatus

Publications (1)

Publication Number Publication Date
CN212934611U true CN212934611U (zh) 2021-04-09

Family

ID=75311507

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202022360540.4U Active CN212934611U (zh) 2019-10-23 2020-10-21 显示装置
CN202080068801.5A Pending CN114467178A (zh) 2019-10-23 2020-10-21 Led显示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202080068801.5A Pending CN114467178A (zh) 2019-10-23 2020-10-21 Led显示装置

Country Status (7)

Country Link
US (1) US20230369385A1 (https=)
EP (1) EP4024452A4 (https=)
JP (2) JP7561842B2 (https=)
KR (1) KR20220088675A (https=)
CN (2) CN212934611U (https=)
BR (1) BR112022007494A2 (https=)
MX (1) MX2022003387A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114467178A (zh) * 2019-10-23 2022-05-10 首尔伟傲世有限公司 Led显示装置
CN114725150A (zh) * 2022-03-14 2022-07-08 湖南大学 Micro-LED器件及微显示屏
CN114725276A (zh) * 2022-03-14 2022-07-08 湖南大学 Micro-LED分立器件
WO2022220604A1 (ko) * 2021-04-14 2022-10-20 서울바이오시스주식회사 Led 디스플레이용 유닛 픽셀 및 그것을 갖는 디스플레이장치

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4597592A4 (en) * 2023-03-31 2026-01-07 Boe Technology Group Co Ltd ELECTROLUMINESCENT DEVICE, DISPLAY DEVICE AND BACKLIGHTING DEVICE

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016312A (ja) 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
TW522534B (en) 2001-09-11 2003-03-01 Hsiu-Hen Chang Light source of full color LED using die bonding and packaging technology
JP4374913B2 (ja) * 2003-06-05 2009-12-02 日亜化学工業株式会社 発光装置
US20070170444A1 (en) * 2004-07-07 2007-07-26 Cao Group, Inc. Integrated LED Chip to Emit Multiple Colors and Method of Manufacturing the Same
KR101100579B1 (ko) * 2005-01-06 2012-01-13 엘지이노텍 주식회사 반도체 발광 다이오드 및 그의 제조 방법과 반도체 발광다이오드를 이용한 디스플레이의 제조 방법
TWI244228B (en) 2005-02-03 2005-11-21 United Epitaxy Co Ltd Light emitting device and manufacture method thereof
JP4901241B2 (ja) 2006-02-27 2012-03-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
KR101761834B1 (ko) 2011-01-28 2017-07-27 서울바이오시스 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
JP6604786B2 (ja) * 2015-09-11 2019-11-13 三星電子株式会社 半導体発光装置およびその製造方法
KR102513080B1 (ko) 2016-04-04 2023-03-24 삼성전자주식회사 Led 광원 모듈 및 디스플레이 장치
US11527519B2 (en) 2017-11-27 2022-12-13 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11282981B2 (en) * 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10886327B2 (en) * 2017-12-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552057B2 (en) * 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
KR20220088675A (ko) * 2019-10-23 2022-06-28 서울바이오시스 주식회사 Led 디스플레이 장치

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114467178A (zh) * 2019-10-23 2022-05-10 首尔伟傲世有限公司 Led显示装置
WO2022220604A1 (ko) * 2021-04-14 2022-10-20 서울바이오시스주식회사 Led 디스플레이용 유닛 픽셀 및 그것을 갖는 디스플레이장치
US12438132B2 (en) 2021-04-14 2025-10-07 Seoul Viosys Co., Ltd. Unit pixel for LED display and LED display apparatus having the same
CN114725150A (zh) * 2022-03-14 2022-07-08 湖南大学 Micro-LED器件及微显示屏
CN114725276A (zh) * 2022-03-14 2022-07-08 湖南大学 Micro-LED分立器件
CN114725150B (zh) * 2022-03-14 2023-10-03 湖南大学 Micro-LED器件及微显示屏
CN114725276B (zh) * 2022-03-14 2023-10-03 湖南大学 Micro-LED分立器件

Also Published As

Publication number Publication date
JP7561842B2 (ja) 2024-10-04
EP4024452A4 (en) 2023-10-04
EP4024452A1 (en) 2022-07-06
CN114467178A (zh) 2022-05-10
JP2024180402A (ja) 2024-12-26
KR20220088675A (ko) 2022-06-28
JP2022553986A (ja) 2022-12-27
MX2022003387A (es) 2022-07-01
BR112022007494A2 (pt) 2022-07-12
US20230369385A1 (en) 2023-11-16

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