CN212770485U

CN212770485U - Thin film device

Info

Publication number: CN212770485U
Application number: CN202020392518.5U
Authority: CN
Inventors: 不公告发明人
Original assignee: Sichuan Mammoth Semiconductor Technology Co ltd
Current assignee: Sichuan Mammoth Semiconductor Technology Co ltd
Priority date: 2020-03-25
Filing date: 2020-03-25
Publication date: 2021-03-23
Anticipated expiration: 2030-03-25

Abstract

The utility model discloses a film device, including base plate, bottom dielectric film layer, rete subassembly and the protective film layer that stacks gradually, the rete subassembly includes along the outside silver film layer, TiNiGaO that stack gradually of base plate_xA film layer and a dielectric film layer; or the film component comprises TiNiGaO which is sequentially laminated along the substrate outwards_xFilm layer, silver film layer, TiNiGaO_xA film layer and a dielectric film layer, the TiNiGaO_xAtomic number of Ni and Ga in film layerThe quantity ratio is more than 1: 4, x is more than or equal to 0. The utility model discloses can improve the stability of membrane system at high temperature thermal treatment, can improve the chemical stability of this thin film device again and improve its mechanical properties, and have high visible light transmissivity, low resistance.

Description

Thin film device

Technical Field

The utility model belongs to the technical field of the thin film device, concretely relates to can carry out high temperature heat treatment's thin film device.

Background

Ordinary glass does not have the function of thermal insulation, and along with the enhancement of energy-saving consciousness of people, coated glass (film devices) has been used in many buildings or automobiles at present, and the coated glass can play a good thermal insulation effect, so that the comfort level in the interior of the building or in the automobile is increased.

Solar cells are photovoltaic elements for generating electricity directly from sunlight. Due to the increasing demand for clean energy, the manufacture of solar cells has been greatly expanded in recent years and is also continuously expanding. Transparent conductive oxide films are widely used in solar cells due to their versatility as transparent coatings and electrodes. In many cases, lowering the resistance by increasing the dopant of the transparent conductive oxide film results in an undesirable lowering of transparency, while some properties of the transparent conductive oxide film are degraded after being subjected to a high-temperature heat treatment. In order to further reduce the resistance of the transparent conductive oxide film, a thicker film layer is required, which leads to a decrease in the transmittance of the film layer, an increase in the stress of the film layer, an increase in the instability of the film layer, and an increase in the manufacturing cost of the film layer.

Thin film devices used in the application fields of solar cells, buildings, automobiles and the like are required to be subjected to high-temperature heat treatment in the preparation process, so that the thin film devices are required to be capable of resisting the high-temperature heat treatment and simultaneously have high visible light transmittance, low resistance, good mechanical resistance, high stability and the like.

Disclosure of Invention

An object of the utility model is to provide a can tolerate high temperature heat treatment, the film device who possesses high visible light transmissivity, low resistance, good anti mechanical properties and high stability simultaneously is used for solving the technical problem that above-mentioned exists.

In order to achieve the above object, the utility model adopts the following technical scheme: a film device comprises a substrate, a bottom dielectric film layer, a film component and a protective film layer which are sequentially stacked, wherein the film component comprises a silver film layer, a TiNiGaO film layer and a TiNiGaO film layer which are sequentially stacked along the substrate_xA film layer and a dielectric film layer; or the film component comprises TiNiGaO which is sequentially laminated along the substrate outwards_xFilm layer, silver film layer, TiNiGaO_xFilm layer and dielectricA plasma membrane layer.

Further, the TiNiGaO_xThe number ratio of Ni atoms to Ga atoms in the film layer is more than 1: 4, x is more than or equal to 0.

Further, the TiNiGaO_xThe number ratio of Ni atoms to Ga atoms in the film layer is more than 1: 1.

further, the TiNiGaO_xThe number ratio of Ni atoms to Ga atoms in the film layer is more than 4: 1.

further, the TiNiGaO_xThe number ratio of Ni atoms to Ga atoms in the film layer is more than 8: 1.

further, the TiNiGaO_xThe thickness of the film layer is 0.05-10nm, and the preferable thickness is 1-8 nm.

Furthermore, the thicknesses of the bottom dielectric film layer, the dielectric film layer and the protective film layer are all 1-100 nm.

Furthermore, the bottom dielectric film layer, the dielectric film layer and the protective film layer are made of SnO_x、TiO_x、SiO_x、SiN_x、ZnO_x、AlZnO_x、Zn_xSn_yO_n、ZrO_x、Zn_xTi_yO_n、NbO_x、Ti_xNb_yO_n、SiNO_xAny one or any combination of ITO, AZO, IWO, BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide-based material and metal sulfide.

Further, the substrate is a glass substrate, a polyimide substrate, or a substrate having a solar cell structure.

Furthermore, the silver film layer can be replaced by an aluminum film layer, a copper film layer, a gold film layer and the like or used in combination.

Furthermore, the number of the film layer assemblies is two, and the two film layer assemblies are sequentially stacked.

Furthermore, the number of the film layer assemblies is three, and the three film layer assemblies are sequentially stacked.

Furthermore, the number of the film layer assemblies is four, and the four film layer assemblies are sequentially stacked.

Further, the thin film device is used for manufacturing an interlayer thin film device or a hollow thin film device.

The utility model has the advantages of:

the utility model forms TiNiGaO on the silver film layer_xFilm layer of TiNiGaO_xThe film layer can be bonded with the silver film layer more firmly without demoulding, and can prevent the silver film layer from being damaged by the external environment, thereby avoiding the performance reduction of the whole film system. Furthermore, the utility model discloses still have high light transmissivity, low resistance.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a thin film device according to the present invention;

fig. 2 is a schematic structural diagram of another thin film device according to the present invention;

fig. 3 is a schematic structural diagram of a third thin film device according to the present invention;

fig. 4 is a schematic structural diagram of a fourth thin-film device according to the present invention;

fig. 5 is a schematic structural diagram of a fifth thin-film device according to the present invention.

Detailed Description

To further illustrate the embodiments, the present invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. With these references, one of ordinary skill in the art will appreciate other possible embodiments and advantages of the present invention. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.

The present invention will now be further described with reference to the accompanying drawings and detailed description.

It is first explained that the tin oxide-based material in the present invention is a material in which tin oxide is doped with fluorine, a material in which tin oxide is doped with iodine, a material in which tin oxide is doped with antimony, or any combination thereof; the utility model provides a ITO indicates that indium oxide dopes the material of tin, AZO indicates that zinc oxide dopes the material of aluminium, IWO indicates that indium oxide dopes the material of tungsten, BZO indicates that zinc oxide dopes the material of boron, GZO indicates that zinc oxide dopes the material of gallium, IZO indicates that zinc oxide dopes the material of indium, IMO indicates that indium oxide dopes the material of molybdenum, ICO indicates that indium oxide dopes the material of cerium, ITIO indicates that indium oxide dopes the material of titanium, IGZO indicates that zinc oxide dopes the material of indium gallium.

As shown in fig. 1, a thin film device includes a substrate 1, a bottom dielectric film layer 2, a film layer assembly and a protective film layer 6, which are sequentially stacked, wherein the film layer assembly includes a silver film layer 3, a TiNiGaO film layer, and a TiNiGaO film layer 6, which are sequentially stacked along the substrate 1 outward_x Film layer 4 and dielectric film layer 5.

Of course, in some embodiments, the TiNiGaO layer may be formed before the silver film layer 3 is formed_xThe film layer 4, i.e. the film layer assembly comprises TiNiGaO which is laminated along the substrate 1 outwards in sequence_xFilm layer 4, silver film layer 3 and TiNiGaO_x Film 4 and dielectric film 5 as shown in fig. 2.

Preferably, the TiNiGaO_xThe number ratio of Ni atoms to Ga atoms in the film layer 4 is more than 1: 4, x is more than or equal to 0, so that the film can grow in a two-dimensional form.

More preferably, the TiNiGaO_xThe number ratio of Ni atoms to Ga atoms in the film layer 4 is more than 1: 1, the film layer can be better grown in a two-dimensional shape.

More preferably, the TiNiGaO_xThe number ratio of Ni atoms to Ga atoms in the film layer 4 is more than 4: 1, the film layer can not lead individual elements in the film layer to be aggregated under the high temperature condition, and the performance of the film layer is prevented from being reduced.

More preferably, the TiNiGaO_xThe number ratio of Ni atoms to Ga atoms in the film layer 4 is more than 8: 1, the film layer can endure higher temperature treatment, and the bonding effect with silver is better.

Preferably, the TiNiGaO_xThe thickness of the film layer 4 is 0.05 to 10nm, preferably 1 to 8nm, and if it is too thin, it does not exert its intended effect, and if it is too thick, it affects the adhesion effect between the film layers and reduces the light transmission effect.

Preferably, the thicknesses of the bottom dielectric film layer 2, the dielectric film layer 5 and the protective film layer 6 are all 1-100nm, and if the thicknesses are too thin, the effects cannot be obtained, and if the thicknesses are too thick, the light transmission effect and the bonding effect between the film layers are seriously affected, and the manufacturing cost is increased.

Specifically, the material of the bottom dielectric film layer 2, the dielectric film layer 5 and the protective film layer 6 is SnO_x、TiO_x、SiO_x、SiN_x、ZnO_x、AlZnO_x、Zn_xSn_yO_n、ZrO_x、Zn_xTi_yO_n、NbO_x、Ti_xNb_yO_n、SiNO_xAny one or any combination of ITO, AZO, IWO, BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide-based material and metal sulfide.

The substrate 1 is a glass substrate, a polyimide substrate, or a substrate having a solar cell structure.

Of course, in some embodiments, the silver film 3 may be replaced by or combined with an aluminum film, a copper film, a gold film, or the like.

Fig. 3 shows another structure of the thin film device of the present invention, which is different from the thin film device shown in fig. 1 in that: the number of the film layer components is two, the two film layer components are sequentially stacked, and the specific structure of the film layer components comprises a substrate 1, a bottom dielectric film layer 2, a first silver film layer 3 and a first TiNiGaO layer which are sequentially stacked_x Film 4, first dielectric film 5, second silver film 31, second TiNiGaO_xFilm layer 41, second dielectric film layer 51, and protective film layer 6. Thin film device opposing of fig. 3In the thin film device of fig. 1, the sheet resistance is lower.

Fig. 4 shows another structure of the thin film device of the present invention, which is different from the thin film device shown in fig. 3 in that: the number of the film layer components is three, the three film layer components are sequentially stacked, and the specific structure of the film layer components comprises a substrate 1, a bottom dielectric film layer 2, a first silver film layer 3 and a first TiNiGaO layer which are sequentially stacked_x Film 4, first dielectric film 5, second silver film 31, second TiNiGaO_xFilm 41, second dielectric film 51, third silver film 32, and third TiNiGaO_x Film layer 42, third dielectric film layer 52, and protective film layer 6. The sheet resistance of the thin film device of fig. 4 is lower relative to the thin film device of fig. 3.

Fig. 5 shows another structure of the thin film device of the present invention, which is different from the thin film device shown in fig. 4 in that: the number of the film layer components is four, the four film layer components are sequentially stacked, and the specific structure of the film layer components comprises a substrate 1, a bottom dielectric film layer 2, a first silver film layer 3 and a first TiNiGaO layer which are sequentially stacked_x Film 4, first dielectric film 5, second silver film 31, second TiNiGaO_xFilm 41, second dielectric film 51, third silver film 32, and third TiNiGaO_xFilm 42, third dielectric film 52, fourth silver film 33, fourth TiNiGaO_xFilm layer 43, fourth dielectric film layer 53, and protective film layer 6. The sheet resistance of the thin film device of fig. 5 is lower relative to the thin film device of fig. 4.

The thin-film device of the present invention will be described below with reference to several embodiments. In each of the following examples and comparative examples, each film layer was sequentially coated on the air surface of a clean, 2.0mm thick, clear float glass base sheet (designated as glass substrate 2.0C).

After the single glass substrate is subjected to high-temperature coating heat treatment, the outermost coating layer of the coated glass substrate is an outermost protective film layer, and the outermost protective film layer is outwards laminated with PVB with the thickness of 0.76mm and the other transparent float glass substrate without a coating with the thickness of 2.0mm in sequence to form the coated laminated glass. The formed coated laminated glass needs to pass a knocking experiment, one of the most important physical property tests, and the experiment is a detection method for measuring the adhesive property between a film layer and PVB and glass. The company Solutia europe.a. classified the laminated glass strike standard as grade 9. The standard grades were specified as 1 st to 9 th grades, depending on the amount of cullet sticking to the PVB after striking from a few to many. The required knocking grades of the laminated glass meeting the requirements of national standard GB9656-2003 are as follows: the knocking grade is not less than 3 grade and not more than 6 grade.

The knocking experiment steps are as follows:

a. cutting two test pieces with the size of 100 multiplied by 300mm from the whole coated laminated glass; b. storing the two samples at-18 +/-2 ℃ for at least 2 hours; c. taking out the sample from the low-temperature position, placing the sample at normal temperature for 1-2 minutes, and then placing the sample on a sample box to knock the sample box by using an iron hammer; d. after knocking, allowing the sample to return to room temperature and then comparing with a standard sample, but waiting until condensed water is volatilized; e. the grade of the knocking experiment can be judged by carefully comparing the sample with the standard sample wafer.

Example 1

ZnSnO with a thickness of 32nm was sequentially plated on the glass substrate 2.0C (substrate 1)₂A film layer; ZnO with thickness of 10nm₂The film layer serves as a bottom dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; TiNiGaO with thickness of 2nm_xFilm 4, wherein the atomic ratio of Ni to Ga is 1: 4, x is 1.5; ZnSnO with thickness of 23nm₂A film layer (dielectric film layer 5); si with a thickness of 17nm₃N₄The film layer is used as a protective film layer 6, and the heat-treatable coated glass, namely the thin-film device, is obtained, and the structure is shown in figure 1.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 82.1 percent before heat treatment; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 83.2 percent and the square resistance is 5.4 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 76.8 percent through detection.

Physical properties:

according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.

Example 2

ZnSnO with a thickness of 35nm was sequentially plated on the glass substrate 2.0C (substrate 1)₂A film layer; ZnO with thickness of 8nm₂The film layer serves as a bottom dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; TiNiGaO with thickness of 2nm_xFilm 4, wherein the atomic ratio of Ni to Ga is 4: 1, x is 2.0; ZnSnO with thickness of 25nm₂A film layer (dielectric film layer 5); si with a thickness of 15nm₃N₄The film layer is used as a protective film layer 6, and the heat-treatable coated glass, namely the thin-film device, is obtained, and the structure is shown in figure 1.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 82.6 percent before heat treatment; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 83.8 percent and the square resistance is 5.2 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 77.1 percent through detection.

Physical properties:

Example 3

ZnSnO with the thickness of 35nm is sequentially plated on a glass substrate 2.0C (substrate)_1.8A film layer (underlying dielectric film layer); TiNiGaO with thickness of 0.05nm_xA film, wherein the atomic ratio of Ni to Ga is 1: 1, x is 1.8; a silver film layer with the thickness of 8 nm; TiNiGaO with thickness of 3nm_xA film, wherein the atomic ratio of Ni to Ga is 1: 1, x is 1.5; ZnSnO with thickness of 77nm_1.8A film layer (dielectric film layer); a silver film layer with the thickness of 11 nm; TiNiGaO with thickness of 2nm_xA film, wherein the atomic ratio of Ni to Ga is 4: 1, x is 1.0; ZnSnO with thickness of 28nm_1.8A film layer (dielectric film layer); TiO with thickness of 8nm₂The film layer is used as a protective film layer to obtain the heat-treatable coated glass, namely the film device.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 78.9 percent before heat treatment; after heat treatment at 585 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 81.1 percent, and the square resistance is 3.4 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 75.6 percent through detection.

Physical properties:

Example 4

Si with a thickness of 15nm was sequentially plated on a glass substrate 2.0C (substrate 1)₃N₄A film layer; ZnSnO with thickness of 18nm_2.3The film layer serves as a bottom dielectric film layer 2; a silver film layer (first silver film layer 3) having a thickness of 12 nm; TiNiGaO with thickness of 1nm_xFilm layer (first TiNiGaO)_xFilm 4), wherein the atomic ratio of Ni to Ga is 1: 1, x is 1.5; ZnSnO with thickness of 73nm_2.3A film layer (first dielectric film layer 5); a silver film layer (second silver film layer 31) having a thickness of 10 nm; TiNiGaO with thickness of 2nm_xFilm layer (second TiNiGaO)_xFilm 41) wherein the atomic ratio of Ni to Ga is 4: 1, x is 1.8; ZnSnO with thickness of 68nm_2.3A film layer (second dielectric film layer 51); a silver film layer (third silver film layer 32) having a thickness of 9 nm; TiNiGaO with thickness of 3nm_xFilm layer (third TiNiGaO)_xFilm 42), wherein the atomic ratio of Ni to Ga is 8: 1, x is 1.8; AlZnO with thickness of 20nm₂A film layer (third dielectric film layer 52); ZrO of thickness 15nm₂The film layer is used as a protective film layer 6, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure of the heat-treatable coated glass is shown in figure 4.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 79.1 percent before heat treatment; after heat treatment at 590 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 80.3 percent, and the square resistance is 2.0 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 72.5 percent through detection.

Physical properties:

according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.

Example 5

Sequentially plating a CdS film layer with the thickness of 10nm on a glass substrate 2.0C (a substrate 1); si with a thickness of 15nm₃N₄A film layer; a ZnO film layer with the thickness of 8nm is used as a bottom dielectric film layer 2; a silver film layer (first silver film layer 3) having a thickness of 12 nm; TiNiGaO with thickness of 2nm_xFilm layer (first TiNiGaO)_xFilm 4), wherein the atomic ratio of Ni to Ga is 1: 1, x is 1.8; ZnSnO with thickness of 65nm_2.3A film layer; a ZnO film layer (first dielectric film layer 5) having a thickness of 8 nm; a silver film layer (second silver film layer 31) having a thickness of 10 nm; TiNiGaO with thickness of 1nm_xFilm layer (second TiNiGaO)_xFilm 41) wherein the atomic ratio of Ni to Ga is 1: 1, x is 1.0; ZnSnO with thickness of 68nm_2.3A film layer (second dielectric film layer 51); a silver film layer (third silver film layer 32) having a thickness of 8 nm; TiNiGaO with thickness of 0.1nm_xFilm layer (third TiNiGaO)_xFilm 42), wherein the atomic ratio of Ni to Ga is 8: 1, x is 1.8; AlZnO with thickness of 70nm₂A film layer; a ZnO film layer (third dielectric film layer 52) having a thickness of 8 nm; a silver film layer (fourth silver film layer 33) having a thickness of 6 nm; TiNiGaO with thickness of 3nm_xFilm layer (fourth TiNiGaO)_xFilm layer 43) wherein the atomic ratio of Ni to Ga is 8: 1, x is 1.8; AlZnO with thickness of 25nm₂A film layer (fourth dielectric film layer 53); ZrO of 18nm thickness₂The film layer is used as a protective film layer 6, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure of the heat-treatable coated glass is shown in figure 5.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 75.1 percent before heat treatment; after heat treatment at 590 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 76.4 percent, and the square resistance is 1.2 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 68.9 percent through detection.

Physical properties:

Example 6

ZnSnO with the thickness of 35nm is plated on the glass substrate 2.0C in sequence_1.8A film layer; a silver film layer with the thickness of 8 nm; a NiTi film layer with the thickness of 3 nm; ZnSnO with thickness of 77nm_1.8A film layer; a silver film layer with the thickness of 11 nm; a NiTi film layer with the thickness of 2 nm; ZnSnO with thickness of 28nm_1.8A film layer; TiO with thickness of 8nm₂The film layer is used as a protective film layer to obtain the heat-treatable coated glass, namely the film device.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass before heat treatment was 77.3%; after heat treatment at 585 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 80.4 percent, and the square resistance is 4.4 omega/□; then the film-coated laminated glass obtained after the procedures of washing, laminating and the like has the visible light transmittance of 73.6 percent through detection.

Physical properties:

Example 7

The coated glass obtained in example 3 was subjected to a high-temperature heat treatment, and left in a furnace at 620 ℃ for 15 minutes, and then the sheet resistance of the single piece of coated glass was measured to be 6.7. omega./□.

The coated laminated glass obtained by the procedures of laminating the single piece of film glass and the like can meet the requirements according to GB9656-2003, an impact experiment, an irradiation resistance experiment, a damp-heat cycle experiment and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.

Example 8

The coated glass obtained in example 6 was subjected to a high-temperature heat treatment, and left to stand in a heating furnace at 620 ℃ for 15 minutes, and then the sheet resistance of the single piece of coated glass was measured to be 23.8. omega./□.

The coated laminated glass obtained by the single piece of coated glass through the working procedures of laminating and the like can not meet the requirements according to GB9656-2003, an impact experiment, an irradiation resistance experiment, a damp-heat cycle experiment and the like. Through detection, the knocking experiment grade is 2 grade, which shows that the adhesive force between the film layer and the glass and PVB is poor.

A comparison of example 7 with example 8 shows that: the sheet resistance of example 7 is not much different from that of example 3, while the sheet resistance of example 8 is much higher than that of example 6, indicating that the silver film layer is damaged to some extent after the high temperature heat treatment of example 8; on the other hand, TiNiGaO is formed between the silver film layers_xA film layer; can improve the high temperature resistance, the mechanical resistance and the chemical stability of the whole membrane system structure.

The utility model discloses a film device can be used for making into intermediate layer film device or hollow film device.

While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. The utility model provides a thin film device, includes base plate, bottom dielectric film layer, rete subassembly and the protection rete that stacks gradually, its characterized in that: the film component comprises a silver film layer, a TiNiGaO layer and a substrate, wherein the silver film layer and the TiNiGaO layer are sequentially stacked outwards along the substrate_xA film layer and a dielectric film layer; or the film component comprises TiNiGaO which is sequentially laminated along the substrate outwards_xFilm layer, silver film layer, TiNiGaO_xA film layer and a dielectric film layer.

2. The thin film device of claim 1, wherein: the TiNiGaO_xThe thickness of the film layer is 0.05-10 nm.

3. The thin film device of claim 1, wherein: the thicknesses of the bottom dielectric film layer, the dielectric film layer and the protective film layer are all 1-100 nm.

4. A thin film device according to any one of claims 1 to 3, wherein: the number of the film layer assemblies is two, and the two film layer assemblies are sequentially stacked.

5. A thin film device according to any one of claims 1 to 3, wherein: the number of the film layer assemblies is three, and the three film layer assemblies are sequentially stacked.

6. A thin film device according to any one of claims 1 to 3, wherein: the number of the film layer assemblies is four, and the four film layer assemblies are sequentially stacked.

7. A thin film device according to any one of claims 1 to 3, wherein: the thin film device is used for manufacturing an interlayer thin film device or a hollow thin film device.