CN111285620A

CN111285620A - Thin film device

Info

Publication number: CN111285620A
Application number: CN202010216021.2A
Authority: CN
Inventors: 不公告发明人
Original assignee: Sichuan Mammoth Semiconductor Technology Co Ltd
Current assignee: Sichuan Mammoth Semiconductor Technology Co Ltd
Priority date: 2020-03-25
Filing date: 2020-03-25
Publication date: 2020-06-16

Abstract

The invention discloses a film device, which comprises a substrate, a film component, a top dielectric film layer and a protective film layer which are sequentially stacked, wherein the film component comprises a dielectric film layer, a silver film layer and a sacrificial film layer which are sequentially stacked outwards along the substrate, or the film component comprises a dielectric film layer, a sacrificial film layer and a silver film layer which are sequentially stacked outwards along the substrate, and further comprises a Nb film layer and a GaNb film layer which are stacked between the silver film layer and the sacrificial film layer or between the silver film layer and the dielectric film layer; or the Nb film layer and the GaNb film layer are laminated between the silver film layer and the sacrificial film layer, and the Nb film layer and/or the GaNb film layer are laminated between the silver film layer and the dielectric film layer, wherein the content of Ga in the GaNb interface film layer is less than 78 at%. The invention can improve the stability of the film system in high-temperature heat treatment, can also improve the chemical stability of the thin film device and improve the mechanical property of the thin film device, and has high visible light transmittance and low resistance.

Description

Thin film device

Technical Field

The invention belongs to the technical field of thin film devices, and particularly relates to a thin film device capable of performing high-temperature heat treatment.

Background

Ordinary glass does not have the function of thermal insulation, and along with the enhancement of energy-saving consciousness of people, coated glass (film devices) has been used in many buildings or automobiles at present, and the coated glass can play a good thermal insulation effect, so that the comfort level in the interior of the building or in the automobile is increased.

Solar cells are photovoltaic elements for generating electricity directly from sunlight. Due to the increasing demand for clean energy, the manufacture of solar cells has been greatly expanded in recent years and is also continuously expanding. Transparent conductive oxide films are widely used in solar cells due to their versatility as transparent coatings and electrodes. In many cases, lowering the resistance by increasing the dopant of the transparent conductive oxide film results in an undesirable lowering of transparency, while some properties of the transparent conductive oxide film are degraded after being subjected to a high-temperature heat treatment. In order to further reduce the resistance of the transparent conductive oxide film, a thicker film layer is required, which leads to a decrease in the transmittance of the film layer, an increase in the stress of the film layer, an increase in the instability of the film layer, and an increase in the manufacturing cost of the film layer.

Thin film devices used in the application fields of solar cells, buildings, automobiles and the like are required to be subjected to high-temperature heat treatment in the preparation process, so that the thin film devices are required to be capable of resisting the high-temperature heat treatment and simultaneously have high visible light transmittance, low resistance, good mechanical resistance, high stability and the like.

Disclosure of Invention

The present invention is to provide a thin film device which can improve the stability of a film system in high temperature heat treatment, can improve the chemical stability and mechanical properties of the thin film device, and has high visible light transmittance and low resistance, so as to solve the above-mentioned problems.

In order to achieve the purpose, the invention adopts the technical scheme that: a film device comprises a substrate, a film component, a top dielectric film and a protective film which are sequentially stacked, wherein the film component comprises a dielectric film, a silver film and a sacrificial film which are sequentially stacked along the substrate, or the film component comprises a dielectric film, a sacrificial film and a silver film which are sequentially stacked along the substrate, the film component also comprises a Nb film and a GaNb film, and the Nb film and the GaNb film are stacked between the silver film and the sacrificial film or between the silver film and the dielectric film; or the Nb film layer and the GaNb film layer are laminated between the silver film layer and the sacrificial film layer, and the Nb film layer and/or the GaNb film layer are laminated between the silver film layer and the dielectric film layer, wherein the content of Ga in the GaNb film layer is less than 78 at%.

Further, the content of Ga in the GaNb film layer is <50 at%.

Further, the Ga content in the GaNb film layer is <20 at%.

Further, the Nb film layer contains oxygen; the GaNb film layer contains nitrogen.

Further, the thickness of the Nb film layer is less than or equal to 10nm, and preferably less than or equal to 5 nm; the thickness of the GaNb film layer is 0.05-10nm, and the preferable thickness is 1-8 nm.

Furthermore, the sacrificial film layer is made of NiCr, Ti or NiCrO_x、Cr、NiCrMo、CrO_x、MoO_x、TiMo、TiMoO_x、NiTi、TiO_xAnd NiTiO_xAny one of them or any combination thereof.

Furthermore, the thickness of the sacrificial film layer is 0.1-8nm, and the preferable thickness is 1-5 nm.

Furthermore, the number of the film layer assemblies is two, and the two film layer assemblies are sequentially stacked.

Furthermore, the number of the film layer assemblies is three, and the three film layer assemblies are sequentially stacked.

Furthermore, the number of the film layer assemblies is four, and the four film layer assemblies are sequentially stacked.

Furthermore, the dielectric film layer, the top dielectric film layer and the protective film layer are made of SnO_x、TiO_x、SiO_x、SiN_x、ZnO_x、AlZnO_x、Zn_xSn_yO_n、ZrO_x、Zn_xTi_yO_n、NbO_x、Ti_xNb_yO_n、SiNO_xAny one or any combination of ITO, AZO, IWO, BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide-based material and metal sulfide.

Further, the thickness of the dielectric film layer, the top dielectric film layer and the protective film layer is 1-100 nm.

Further, the substrate is a glass substrate, a polyimide substrate, or a substrate having a solar cell structure.

Further, the thin film device is used for manufacturing an interlayer thin film device or a hollow thin film device.

The invention has the beneficial technical effects that:

forming a Nb film layer and a GaNb film layer between a silver film layer and a sacrificial film layer; or forming a Nb film layer and a GaNb film layer between the silver film layer and the dielectric film layer; or forming a Nb film layer and a GaNb film layer between the silver film layer and the sacrificial film layer, and simultaneously forming a Nb film layer and/or a GaNb film layer between the silver film layer and the dielectric film layer, wherein the content of Ga in the GaNb film layer is less than 78 at%, and the interface between the Nb film layer and the silver film layer has good wettability, so that the deposition quality of the subsequent film layer is better; the GaNb film layer and the Nb film layer can better block the invasion of moisture to the silver film layer, and the whole film system has better electrical property, thereby improving the stability of the film system in high-temperature heat treatment, and improving the chemical stability and the mechanical property of the film device. In addition, the invention also has high light transmittance and low resistance.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

FIG. 1 is a schematic structural diagram of a thin film device of the present invention;

FIG. 2 is a schematic structural diagram of another thin film device of the present invention;

FIG. 3 is a schematic structural view of a third thin film device of the present invention;

fig. 4 is a schematic structural view of a fourth thin-film device of the present invention.

Detailed Description

To further illustrate the various embodiments, the invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. Those skilled in the art will appreciate still other possible embodiments and advantages of the present invention with reference to these figures. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.

The invention will now be further described with reference to the accompanying drawings and detailed description.

It is to be noted that the tin oxide-based material in the present invention is a tin oxide-doped fluorine material, a tin oxide-doped iodine material, a tin oxide-doped antimony material, or any combination thereof; in the present invention, ITO refers to a material in which indium oxide is doped with tin, AZO refers to a material in which zinc oxide is doped with aluminum, IWO refers to a material in which indium oxide is doped with tungsten, BZO refers to a material in which zinc oxide is doped with boron, GZO refers to a material in which zinc oxide is doped with gallium, IZO refers to a material in which zinc oxide is doped with indium, IMO refers to a material in which indium oxide is doped with molybdenum, ICO refers to a material in which indium oxide is doped with cerium, ITIO refers to a material in which indium oxide is doped with titanium, and IGZO refers to a material in which zinc oxide is doped with indium gallium.

As shown in fig. 1, a thin film device includes a substrate 1, a film assembly, a top dielectric film 7 and a protective film 8, which are sequentially stacked, the film assembly includes a dielectric film 2, a silver film 3 and a sacrificial film 6, which are sequentially stacked along the substrate 1, the film assembly further includes a Nb film 4 and a GaNb film 5, the Nb film 4 and the GaNb film 5 are sequentially stacked between the silver film 3 and the sacrificial film 6, and the content of Ga in the GaNb film 5 is less than 78 at%.

Preferably, the Ga content in the GaNb film layer 5 is less than 50 at%, so that the deposition effect of the film layer is better.

More preferably, the Ga content of the GaNb film layer 5 is <20 at%, so that the film layer can withstand higher temperatures.

Preferably, the Nb film layer 4 contains oxygen, so that the wettability between the Nb film layer and the silver film layer 3 and between the Nb film layer and the subsequent film layers is better, and a film layer with better quality can be obtained; the GaNb film layer 5 contains nitrogen, so that the influence of the external environment on the silver film layer can be better blocked, and the whole film system has better optical performance.

Preferably, the thickness of the Nb film layer 4 is less than or equal to 10nm, preferably less than or equal to 5nm, and if the film layer is too thick, the optical performance of the whole film system is affected; the thickness of the GaNb film layer 5 is 0.05-10nm, preferably 1-8nm, if the film layer is too thick, the optical property and the mechanical property of the whole film system can be affected, and if the film layer is too thin, the film layer cannot play a role.

Specifically, the material of the sacrificial film layer 6 may be NiCr, Ti, NiCrO_x、Cr、NiCrMo、CrO_x、MoO_x、TiMo、TiMoO_x、NiTi、TiO_xAnd NiTiO_xAny one or any combination thereof; the dielectric film layer 2, the top dielectric film layer 7 and the protective film layer 8 can be made of SnO_x、TiO_x、SiO_x、SiN_x、ZnO_x、AlZnO_x、Zn_xSn_yO_n、ZrO_x、Zn_xTi_yO_n、NbO_x、Ti_xNb_yO_n、SiNO_xAny one or any combination of ITO, AZO, IWO, BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide-based material and metal sulfide; the substrate 1 is a glass substrate, a polyimide substrate, a substrate having a solar cell structure, or the like.

Preferably, the thickness of the sacrificial film layer 6 is 0.1 to 8nm, preferably 1 to 5nm, if the film layer is too thick, the adhesive properties of the entire film system are reduced and the optical properties are reduced, if the film layer is too thin, the sacrificial film layer does not function as intended.

Preferably, the dielectric layer 2, the top dielectric layer 7 and the protective layer 8 have a layer thickness of 1 to 100nm, which is too thin to be effective, but too thick which may seriously affect the light transmission effect and the adhesion effect between the layers and increase the manufacturing cost.

Of course, in some embodiments, the Nb film and the GaNb film may also be disposed between the silver film and the dielectric film, or the Nb film and the GaNb film may be disposed between the silver film and the sacrificial film, and a Nb film and/or a GaNb film may also be disposed between the silver film and the dielectric film.

In some embodiments, the sacrificial film layer in the film layer assembly may also be disposed between the dielectric film layer and the silver film layer, that is, the film layer assembly includes the dielectric film layer, the sacrificial film layer and the silver film layer which are sequentially stacked along the substrate.

Alternatively, a sacrificial film may be deposited prior to depositing the silver film 3.

Fig. 2 shows another structure of the thin-film device of the present invention, which is different from the thin-film device shown in fig. 1 in that: the number of film layer subassembly is two, and two film layer subassemblies stack gradually and set up, and its concrete structure is for including the base plate 1, first dielectric film layer 2, first silver rete 3, first Nb rete 4, first GaNb rete 5, first sacrificial film layer 6, second dielectric film layer 21, second silver rete 31, second Nb rete 41, second GaNb rete 51, second sacrificial film layer 61, top layer dielectric film layer 7 and protection film layer 8 that stack gradually. The sheet resistance of the thin film device of fig. 2 is lower relative to the thin film device of fig. 1.

Fig. 3 shows another structure of the thin-film device of the present invention, which is different from the thin-film device shown in fig. 2 in that: the number of the film layer components is three, the three film layer components are sequentially stacked, and the specific structure of the three film layer components comprises a substrate 1, a first dielectric film layer 2, a first silver film layer 3, a first Nb film layer 4, a first GaNb film layer 5, a first sacrificial film layer 6, a second dielectric film layer 21, a second silver film layer 31, a second Nb film layer 41, a second GaNb film layer 51, a second sacrificial film layer 61, a third dielectric film layer 22, a third silver film layer 32, a third Nb film layer 42, a third GaNb film layer 52, a third sacrificial film layer 62, a top dielectric film layer 7 and a protection film layer 8 which are sequentially stacked. The sheet resistance of the thin film device of fig. 3 is lower relative to the thin film device of fig. 2.

Fig. 4 shows another structure of the thin-film device of the present invention, which is different from the thin-film device shown in fig. 3 in that: the number of the film components is four, the four film components are sequentially stacked, and the specific structure of the film components comprises a substrate 1, a first dielectric film layer 2, a first silver film layer 3, a first Nb film layer 4, a first GaNb film layer 5, a first sacrificial film layer 6, a second dielectric film layer 21, a second silver film layer 31, a second Nb film layer 41, a second GaNb film layer 51, a second sacrificial film layer 61, a third dielectric film layer 22, a third silver film layer 32, a third Nb film layer 42, a third GaNb film layer 52, a third sacrificial film layer 62, a fourth dielectric film layer 23, a fourth silver film layer 33, a fourth Nb film layer 43, a fourth GaNb film layer 53, a fourth sacrificial film layer 63, a top dielectric film layer 7 and a protective film layer 8 which are sequentially stacked. The sheet resistance of the thin film device of fig. 4 is lower relative to the thin film device of fig. 3.

The thin film device of the present invention will be described below by way of several specific examples. In each of the following examples and comparative examples, each film layer was sequentially coated on the air surface of a clean, 2.0mm thick, clear float glass base sheet (designated as glass substrate 2.0C).

After the single glass substrate is subjected to high-temperature coating heat treatment, the outermost coating layer of the coated glass substrate is an outermost protective film layer, and the outermost protective film layer is outwards laminated with PVB with the thickness of 0.76mm and the other transparent float glass substrate without a coating with the thickness of 2.0mm in sequence to form the coated laminated glass. The formed coated laminated glass needs to pass a knocking experiment, one of the most important physical property tests, and the experiment is a detection method for measuring the adhesive property between a film layer and PVB and glass. The company Solutia europe.a. classified the laminated glass strike standard as grade 9. The standard grades were specified as 1 st to 9 th grades, depending on the amount of cullet sticking to the PVB after striking from a few to many. The required knocking grades of the laminated glass meeting the requirements of national standard GB9656-2003 are as follows: the knocking grade is not less than 3 grade and not more than 6 grade.

The knocking experiment steps are as follows:

a. cutting two test pieces with the size of 100 multiplied by 300mm from the whole coated laminated glass; b. storing the two samples at-18 +/-2 ℃ for at least 2 hours; c. taking out the sample from the low-temperature position, placing the sample at normal temperature for 1-2 minutes, and then placing the sample on a sample box to knock the sample box by using an iron hammer; d. after knocking, allowing the sample to return to room temperature and then comparing with a standard sample, but waiting until condensed water is volatilized; e. the grade of the knocking experiment can be judged by carefully comparing the sample with the standard sample wafer.

Example 1

Si with a thickness of 38nm was sequentially plated on a glass substrate 2.0C (substrate 1)₃N₄A film layer; ZnO with thickness of 8nm₂The film layer serves as a dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; a Nb film layer 4 with the thickness of 3 nm; a GaNb film layer 5 with a thickness of 0.05nm, wherein the Ga content is 78 at%, and the nitrogen content is 3 at%; a NiCr film layer (sacrificial film layer 6) with the thickness of 2 nm; ZnSnO with thickness of 23nm₂A film layer (top dielectric film layer 7); si with a thickness of 15nm₃N₄The film layer is used as a protective film layer 8, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in figure 1.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass before heat treatment was 83.5%; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 84.3 percent and the square resistance is 4.0 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 78.6 percent through detection.

Physical properties:

according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.

Example 2

Si with a thickness of 38nm was sequentially plated on a glass substrate 2.0C (substrate 1)₃N₄A film layer; ZnO with thickness of 8nm₂The film layer serves as a dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; a Nb film layer 4 with the thickness of 3 nm; a GaNb film layer 5 with a thickness of 0.05nm, wherein the Ga content is 20 at%, and the nitrogen content is 3 at%; a NiCr film layer (sacrificial film layer 6) with the thickness of 2 nm; ZnSnO with thickness of 23nm₂A film layer (top dielectric film layer 7); si with a thickness of 15nm₃N₄The film serves as a protective film 8 to obtain a heat-treatable coated glass, i.e., a thin-film device, having a structure such asAs shown in fig. 1.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass before heat treatment was 83.9%; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 84.8 percent and the square resistance is 3.8 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 79.1 percent through detection.

Physical properties:

according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4.5 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.

Example 3

ZnSnO with the thickness of 40nm is sequentially plated on a glass substrate 2.0C (substrate)₂A film layer (dielectric film layer); a GaNb film layer with the thickness of 1nm, wherein the content of Ga is 10 at%; a silver film layer with a thickness of 10 nm; a Nb film layer with the thickness of 0.5 nm; a GaNb film layer with the thickness of 10nm, wherein the content of Ga is 20 at%; a NiTi film layer (sacrificial film layer) with the thickness of 0.1 nm; ZnSnO with thickness of 75nm_1.8A film layer (dielectric film layer); a silver film layer with the thickness of 11 nm; a Nb film layer with the thickness of 1 nm; a GaNb film layer with the thickness of 2nm, wherein the content of Ga is 50 at%; a NiTi film layer (sacrificial film layer) with the thickness of 3 nm; ZnSnO with thickness of 30nm₂A film layer (top dielectric film layer); TiO with thickness of 7nm₂The film layer is used as a protective layer to obtain the heat-treatable coated glass, namely the film device.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 79.3 percent before heat treatment; after heat treatment at 585 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 83.3 percent, and the square resistance is 3.8 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 75.7 percent through detection.

Physical properties:

Example 4

Si with a thickness of 20nm was sequentially plated on a glass substrate 2.0C (substrate 1)₃N₄A film layer; ZnSnO with thickness of 18nm_2.3The film layer serves as a first dielectric film layer 2; a silver film layer (first silver film layer 3) having a thickness of 12 nm; a Nb film layer (first Nb film layer 4) having a thickness of 1 nm; a GaNb film layer (first GaNb film layer 5) having a thickness of 1nm, wherein the Ga content is 50 at%; a TiMo film layer (first sacrificial film layer 6) having a thickness of 2 nm; ZnSnO with thickness of 75nm_2.3A film layer (second dielectric film layer 21); a silver film layer (second silver film layer 31) having a thickness of 10 nm; an Nb film layer (second Nb film layer 41) having a thickness of 2 nm; a GaNb film layer (second GaNb film layer 51) having a thickness of 1nm, wherein the Ga content is 20 at%; a NiCr film layer (second sacrificial film layer 61) having a thickness of 1 nm; ZnSnO with thickness of 70nm_2.3A film layer (third dielectric film layer 22); a silver film layer (third silver film layer 32) having a thickness of 9 nm; a Nb film layer (third Nb film layer 42) of 10nm thickness containing 20 at% of oxygen; a GaNb film layer (third GaNb film layer 52) having a thickness of 1nm, wherein the Ga content is 10 at%; a NiTi film layer (third sacrificial film layer 62) having a thickness of 8 nm; AlZnO with thickness of 25nm₂A film layer (top dielectric film layer 7); ZrO of thickness 15nm₂The film layer is used as a protective film layer 8, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in figure 3.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 78.8 percent before heat treatment; after heat treatment at 590 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 80.9 percent, and the square resistance is 1.8 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 73.9 percent through detection.

Physical Properties

According to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.

Example 5

Sequentially plating a CdS film layer with the thickness of 20nm on a glass substrate 2.0C (a substrate 1); si with a thickness of 15nm₃N₄A film layer; a ZnO film layer with the thickness of 8nm is used as a first dielectric film layer 2; a silver film layer (first silver film layer 3) having a thickness of 12 nm; a Nb film layer (first Nb film layer 4) having a thickness of 1 nm; a GaNb film layer (first GaNb film layer 5) with a thickness of 2nm, wherein the Ga content is 60 at%; a TiMo film layer (first sacrificial film layer 6) having a thickness of 2 nm; ZnSnO with thickness of 70nm_2.3A film layer; a ZnO film layer with a thickness of 8nm is used as the second dielectric film layer 21; a silver film layer (second silver film layer 31) having a thickness of 10 nm; an Nb film layer (second Nb film layer 41) having a thickness of 1 nm; a GaNb film layer (second GaNb film layer 51) having a thickness of 1nm, wherein the Ga content is 50 at%; a NiCr film layer (second sacrificial film layer 61) having a thickness of 2 nm; ZnSnO with thickness of 68nm_2.3A film layer (third dielectric film layer 22); a silver film layer (third silver film layer 32) having a thickness of 8 nm; a Nb film layer (third Nb film layer 42) having a thickness of 1 nm; a GaNb film layer (third GaNb film layer 52) having a thickness of 0.1nm, wherein the Ga content is 20 at%; a NiTi film layer (third sacrificial film layer 62) having a thickness of 3 nm; AlZnO with thickness of 75nm₂A film layer; a ZnO film layer with a thickness of 8nm as the fourth dielectric film layer 23; a silver film layer (fourth silver film layer 33) having a thickness of 6 nm; a Nb film layer (fourth Nb film layer 43) having a thickness of 1 nm; a GaNb film layer (fourth GaNb film layer 53) having a thickness of 2nm, wherein the Ga content is 10 at%; a NiCr film layer (fourth sacrificial film layer 63) having a thickness of 2 nm; AlZnO with thickness of 30nm₂A film layer (top dielectric film layer 7); ZrO with a thickness of 10nm₂The film layer is used as a protective film layer 8, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in figure 4.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 74.5 percent before heat treatment; after heat treatment at 590 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 75.8 percent, and the square resistance is 1.3 omega/□; then the film-coated laminated glass obtained after the procedures of washing, laminating and the like has the visible light transmittance of 68.2 percent through detection.

Physical properties:

Example 6

ZnSnO with the thickness of 40nm is sequentially plated on the glass substrate 2.0C₂A film layer; a silver film layer with a thickness of 10 nm; a NiTi film layer with the thickness of 0.1 nm; ZnSnO with thickness of 75nm_1.8A film layer; a silver film layer with the thickness of 11 nm; a NiTi film layer with the thickness of 3 nm; ZnSnO with thickness of 30nm₂A film layer; TiO with thickness of 7nm₂The film layer is used as a protective layer to obtain the heat-treatable coated glass.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 76.8 percent before heat treatment; after heat treatment at 585 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 78.3 percent, and the square resistance is 4.4 omega/□; then the film-coated laminated glass obtained after the procedures of washing, laminating and the like has the visible light transmittance of 73.6 percent through detection.

Physical properties:

Example 7

The coated glass obtained in example 2 was subjected to a high-temperature heat treatment, and left to stand in a heating furnace at 620 ℃ for 14 minutes, and then the sheet resistance of the single piece of coated glass was measured to be 4.9 Ω/□.

The coated laminated glass obtained by the procedures of laminating the single piece of film glass and the like can meet the requirements according to GB9656-2003, an impact experiment, an irradiation resistance experiment, a damp-heat cycle experiment and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.

Example 8

The coated glass obtained in example 5 was subjected to a high-temperature heat treatment, and left to stand in a heating furnace at 620 ℃ for 14 minutes, and then the sheet resistance of the single piece of coated glass was measured to be 21.4. omega./□.

The coated laminated glass obtained by the single piece of coated glass through the working procedures of laminating and the like can not meet the requirements according to GB9656-2003, an impact experiment, an irradiation resistance experiment, a damp-heat cycle experiment and the like. Through detection, the knocking experiment grade is 2 grade, which shows that the adhesive force between the film layer and the glass and PVB is poor.

From a comparison of example 7 with example 8, it can be seen that: the sheet resistance of example 7 is not much different from that of example 3, while the sheet resistance of example 8 is much higher than that of example 6, indicating that the silver film layer is damaged to some extent after the high temperature heat treatment of example 8; on the other hand, a Nb film and a GaNb film are formed between the silver film and the sacrificial film, and the content of Ga in the GaNb film is less than 78 at%; or forming a Nb film layer and a GaNb film layer between the silver film layer and the dielectric film layer, wherein the content of Ga in the GaNb film layer is less than 78 at%; or forming a Nb film layer and a GaNb film layer between the silver film layer and the sacrificial film layer, and simultaneously forming a Nb film layer and/or a GaNb film layer between the silver film layer and the dielectric film layer, wherein the content of Ga in the GaNb film layer is less than 78 at%; these can improve the high temperature resistance, mechanical resistance and chemical stability of the entire membrane system structure.

The thin film device of the invention can be used for manufacturing an interlayer thin film device or a hollow thin film device.

While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. The utility model provides a thin film device, includes base plate, membrane layer subassembly, top layer dielectric film layer and the protection film layer that stacks gradually, the membrane layer subassembly includes along outside dielectric film layer, silver-colored rete and the sacrificial film layer that stacks gradually of base plate, or the membrane layer subassembly includes along outside dielectric film layer, sacrificial film layer and the silver-colored rete that stacks gradually of base plate, its characterized in that: the film component further comprises a Nb film and a GaNb film, wherein the Nb film and the GaNb film are stacked between the silver film and the sacrificial film or between the silver film and the dielectric film; or the Nb film layer and the GaNb film layer are laminated between the silver film layer and the sacrificial film layer, and the Nb film layer and/or the GaNb film layer are laminated between the silver film layer and the dielectric film layer, wherein the content of Ga in the GaNb film layer is less than 78 at%.

2. The thin film device of claim 1, wherein: the content of Ga in the GaNb film layer is less than 50 at%.

3. The thin film device of claim 1, wherein: the Nb film layer contains oxygen; the GaNb film layer contains nitrogen.

4. The thin film device of claim 1, wherein: the thickness of the Nb film layer is less than or equal to 10 nm; the thickness of the GaNb film layer is 0.05-10 nm.

5. The thin film device of claim 1, wherein: the sacrificial film layer is made of NiCr, Ti or NiCrO_x、Cr、NiCrMo、CrO_x、MoO_x、TiMo、TiMoO_x、NiTi、TiO_xAnd NiTiO_xAny one of them or any combination thereof.

6. The thin film device of claim 1, wherein: the thickness of the sacrificial film layer is 0.1-8 nm.

7. The thin film device of any of claims 1-6, wherein: the number of the film layer assemblies is two, and the two film layer assemblies are sequentially stacked.

8. The thin film device of any of claims 1-6, wherein: the number of the film layer assemblies is three, and the three film layer assemblies are sequentially stacked.

9. The thin film device of any of claims 1-6, wherein: the number of the film layer assemblies is four, and the four film layer assemblies are sequentially stacked.

10. The thin film device of any of claims 1-6, wherein: the thin film device is used for manufacturing an interlayer thin film device or a hollow thin film device.