CN111285621A - Thin film device - Google Patents
Thin film device Download PDFInfo
- Publication number
- CN111285621A CN111285621A CN202010216112.6A CN202010216112A CN111285621A CN 111285621 A CN111285621 A CN 111285621A CN 202010216112 A CN202010216112 A CN 202010216112A CN 111285621 A CN111285621 A CN 111285621A
- Authority
- CN
- China
- Prior art keywords
- film layer
- aggd
- film
- thickness
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 239000010408 film Substances 0.000 claims abstract description 456
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052709 silver Inorganic materials 0.000 claims abstract description 71
- 239000004332 silver Substances 0.000 claims abstract description 71
- 239000010410 layer Substances 0.000 claims description 416
- 230000000712 assembly Effects 0.000 claims description 12
- 238000000429 assembly Methods 0.000 claims description 12
- 229910001000 nickel titanium Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910003087 TiOx Inorganic materials 0.000 claims description 5
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 229910001120 nichrome Inorganic materials 0.000 claims description 5
- 229910019923 CrOx Inorganic materials 0.000 claims description 3
- 229910015711 MoOx Inorganic materials 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 37
- 238000010438 heat treatment Methods 0.000 abstract description 29
- 238000002834 transmittance Methods 0.000 abstract description 29
- 230000001681 protective effect Effects 0.000 abstract description 17
- 239000000126 substance Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 description 57
- 239000011701 zinc Substances 0.000 description 51
- 238000012360 testing method Methods 0.000 description 26
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 238000001514 detection method Methods 0.000 description 22
- 238000002474 experimental method Methods 0.000 description 20
- 229910007717 ZnSnO Inorganic materials 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- 239000005340 laminated glass Substances 0.000 description 15
- 230000001070 adhesive effect Effects 0.000 description 13
- 239000011787 zinc oxide Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 10
- 238000010030 laminating Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000000704 physical effect Effects 0.000 description 9
- 238000009863 impact test Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910006854 SnOx Inorganic materials 0.000 description 2
- 229910007667 ZnOx Inorganic materials 0.000 description 2
- 229910003134 ZrOx Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000005329 float glass Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052976 metal sulfide Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000006063 cullet Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 244000144972 livestock Species 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3639—Multilayers containing at least two functional metal layers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3647—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer in combination with other metals, silver being more than 50%
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3652—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the coating stack containing at least one sacrificial layer to protect the metal from oxidation
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
- C03C27/10—Joining glass to glass by processes other than fusing with the aid of adhesive specially adapted for that purpose
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/03—3 layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
Abstract
The invention discloses a thin film device, which comprises a substrate, a film component, a top dielectric film layer and a protective film layer which are sequentially stacked, wherein the film component comprises a dielectric film layer, a silver film layer and a sacrificial film layer which are sequentially stacked outwards along the substrate, or the dielectric film layer, the sacrificial film layer and the silver film layer; or the Zn film layer is laminated between the silver film layer and the sacrificial film layer, and the AgGd film layer is laminated between the silver film layer and the dielectric film layer; or the AgGd film layer and the Zn film layer are laminated between the silver film layer and the sacrificial film layer, and the AgGd film layer is laminated between the silver film layer and the dielectric film layer, wherein the content of Gd in the AgGd film layer is less than or equal to 90 at%. The invention can improve the stability of the film system in high-temperature heat treatment, can also improve the chemical stability of the thin film device and improve the mechanical property of the thin film device, and has high visible light transmittance and low resistance.
Description
Technical Field
The invention belongs to the technical field of thin film devices, and particularly relates to a thin film device capable of performing high-temperature heat treatment.
Background
Ordinary glass does not have the function of thermal insulation, and along with the enhancement of energy-saving consciousness of people, coated glass (film devices) has been used in many buildings or automobiles at present, and the coated glass can play a good thermal insulation effect, so that the comfort level in the interior of the building or in the automobile is increased.
Solar cells are photovoltaic elements for generating electricity directly from sunlight. Due to the increasing demand for clean energy, the manufacture of solar cells has been greatly expanded in recent years and is also continuously expanding. Transparent conductive oxide films are widely used in solar cells due to their versatility as transparent coatings and electrodes. In many cases, lowering the resistance by increasing the dopant of the transparent conductive oxide film results in an undesirable lowering of transparency, while some properties of the transparent conductive oxide film are degraded after being subjected to a high-temperature heat treatment. In order to further reduce the resistance of the transparent conductive oxide film, a thicker film layer is required, which leads to a decrease in the transmittance of the film layer, an increase in the stress of the film layer, an increase in the instability of the film layer, and an increase in the manufacturing cost of the film layer.
Thin film devices used in the application fields of solar cells, buildings, automobiles and the like are required to be subjected to high-temperature heat treatment in the preparation process, so that the thin film devices are required to be capable of resisting the high-temperature heat treatment and simultaneously have high visible light transmittance, low resistance, good mechanical resistance, high stability and the like.
Disclosure of Invention
The present invention is to provide a thin film device which can improve the stability of a film system in high temperature heat treatment, can improve the chemical stability and mechanical properties of the thin film device, and has high visible light transmittance and low resistance, so as to solve the above-mentioned problems.
In order to achieve the purpose, the invention adopts the technical scheme that: a film device comprises a substrate, a film component, a top dielectric film layer and a protective film layer which are sequentially stacked, wherein the film component comprises a dielectric film layer, a silver film layer and a sacrificial film layer which are sequentially stacked outwards along the substrate, or the film component comprises a dielectric film layer, a sacrificial film layer and a silver film layer which are sequentially stacked outwards along the substrate, the film component further comprises an AgGd film layer and a Zn film layer, and the AgGd film layer and the Zn film layer are stacked between the silver film layer and the sacrificial film layer; or the Zn film layer is laminated between the silver film layer and the sacrificial film layer, and the AgGd film layer is laminated between the silver film layer and the dielectric film layer; or the AgGd film layer and the Zn film layer are laminated between the silver film layer and the sacrificial film layer, and the AgGd film layer is laminated between the silver film layer and the dielectric film layer, wherein the content of Gd in the AgGd film layer is less than or equal to 90 at%.
Furthermore, the content of Gd in the AgGd film layer is less than or equal to 80at percent.
Furthermore, the content of Gd in the AgGd film layer is less than or equal to 77.5at percent.
Furthermore, the content of Gd in the AgGd film layer is less than or equal to 50at percent.
Further, the thickness of the AgGd film layer is 0.05-10nm, preferably 1-8 nm; the thickness of the Zn film layer is less than or equal to 10nm, and the preferable thickness is less than or equal to 5 nm.
Further, the sacrificial film layer is made of NiCr, Ti or NiCrOx、Cr、NiCrMo、CrOx、MoOx、TiMo、TiMoOx、NiTi、TiOxAnd NiTiOxAny one of them or any combination thereof.
Further, the thickness of the sacrificial film layer is 0.1-8nm, and the preferable thickness is 1-5 nm.
Furthermore, the dielectric film layer, the top dielectric film layer and the protective film layer are made of SnOx、TiOx、SiOx、SiNx、ZnOx、AlZnOx、ZnxSnyOn、ZrOx、ZnxTiyOn、NbOx、TixNbyOn、SiNOxAny one or any combination of ITO, AZO, IWO, BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide-based material and metal sulfide.
Further, the thickness of the dielectric film layer, the top dielectric film layer and the protective film layer is 1-100 nm.
Further, the substrate is a glass substrate, a polyimide substrate, or a substrate having a solar cell structure.
Furthermore, the number of the film layer assemblies is two, and the two film layer assemblies are sequentially stacked.
Furthermore, the number of the film layer assemblies is three, and the three film layer assemblies are sequentially stacked.
Furthermore, the number of the film layer assemblies is four, and the four film layer assemblies are sequentially stacked.
Further, the thin film device is used for manufacturing an interlayer thin film device or a hollow thin film device.
The invention has the beneficial technical effects that:
the AgGd film layer and the Zn film layer are formed between the silver film layer and the sacrificial film layer; or forming an AgGd film layer between the silver film layer and the dielectric film layer, and simultaneously forming a Zn film layer between the silver film layer and the sacrificial film layer; or an AgGd film layer and a Zn film layer are formed between the silver film layer and the sacrificial film layer, and an AgGd film layer is formed between the silver film layer and the dielectric film layer, wherein the content of Gd in the AgGd film layer is less than or equal to 90 at%, and the AgGd film layer, the Zn film layer and the silver film layer can form a good interface, so that the bonding between the film layers is firmer, and meanwhile, the combination of the two film layers can well block the corrosion and damage action of the external environment on the silver film layer, improve the weather resistance of the whole film system, further improve the stability of the film system in high-temperature heat treatment, and also improve the chemical stability and the mechanical property of the film device. In addition, the invention also has high light transmittance and low resistance.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a thin film device of the present invention;
FIG. 2 is a schematic structural diagram of another thin film device of the present invention;
FIG. 3 is a schematic structural view of a third thin film device of the present invention;
FIG. 4 is a schematic structural diagram of a fourth thin-film device according to the present invention;
fig. 5 is a schematic structural diagram of a fifth thin-film device according to the present invention.
Detailed Description
To further illustrate the various embodiments, the invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. Those skilled in the art will appreciate still other possible embodiments and advantages of the present invention with reference to these figures. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.
The invention will now be further described with reference to the accompanying drawings and detailed description.
It is to be noted that the tin oxide-based material in the present invention is a tin oxide-doped fluorine material, a tin oxide-doped iodine material, a tin oxide-doped antimony material, or any combination thereof; in the present invention, ITO refers to a material in which indium oxide is doped with tin, AZO refers to a material in which zinc oxide is doped with aluminum, IWO refers to a material in which indium oxide is doped with tungsten, BZO refers to a material in which zinc oxide is doped with boron, GZO refers to a material in which zinc oxide is doped with gallium, IZO refers to a material in which zinc oxide is doped with indium, IMO refers to a material in which indium oxide is doped with molybdenum, ICO refers to a material in which indium oxide is doped with cerium, ITIO refers to a material in which indium oxide is doped with titanium, and IGZO refers to a material in which zinc oxide is doped with indium gallium.
As shown in fig. 1, a thin film device includes a substrate 1, a film assembly, a top dielectric film 7 and a protective film 8, which are sequentially stacked, the film assembly includes a dielectric film 2, a silver film 3 and a sacrificial film 6, which are sequentially stacked along the substrate 1, the film assembly further includes an AgGd film 4 and a Zn film 5, the AgGd film 4 and the Zn film 5 are stacked between the silver film 3 and the sacrificial film 5, and the content of Gd in the AgGd film 4 is less than or equal to 90 at%.
Preferably, the content of Gd in the AgGd film layer 4 is less than or equal to 80 at%, which can make the deposition effect of the film layer better.
More preferably, the content of Gd in the AgGd film layer 4 is 77.5 at% or less, and the film layer is formed in a two-dimensional form.
More preferably, the content of Gd in the AgGd film layer 4 is less than or equal to 50 at%, the grain size of the film layer is more uniform, and the film layer can keep better performance at higher temperature.
Preferably, the thickness of the AgGd film layer 4 is 0.05 to 10nm, preferably 1 to 8nm, which does not have a desired effect if the film layer is too thin, and the adhesive effect between film layers is deteriorated and the optical performance is also deteriorated if the film layer is too thick; the thickness of the Zn film layer 5 is less than or equal to 10nm, preferably less than or equal to 5nm, and the optical performance of the film layer can be seriously reduced if the film layer is too thick, and the stress of the film layer can be increased to easily cause demoulding.
Preferably, the thickness of the sacrificial film layer 6 is 0.1 to 8nm, preferably 1 to 5nm, if the film layer is too thick, the adhesive properties of the entire film system are reduced and the optical properties are reduced, if the film layer is too thin, the sacrificial film layer does not function as intended.
Preferably, the thickness of the dielectric layer 2, the top dielectric layer 7 and the protective layer 8 is 1-100nm, which is too thin to be effective, and too thick to be effective in light transmission, adhesion between the layers, and manufacturing cost.
Specifically, the sacrificial film layer 6 is made of NiCr, Ti or NiCrOx、Cr、NiCrMo、CrOx、MoOx、TiMo、TiMoOx、NiTi、TiOxAnd NiTiOxAny one of them or any combination thereof.
The dielectric film layer 2, the top dielectric film layer 7 and the protective film layer 8 are made of SnOx、TiOx、SiOx、SiNx、ZnOx、AlZnOx、ZnxSnyOn、ZrOx、ZnxTiyOn、NbOx、TixNbyOn、SiNOxAny one or any combination of ITO, AZO, IWO, BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide-based material and metal sulfide.
The substrate 1 is a glass substrate, a polyimide substrate, or a substrate having a solar cell structure.
Of course, in some embodiments, a Zn film layer may also be laminated between the silver film layer and the sacrificial film layer, while an AgGd film layer is laminated between the silver film layer and the dielectric film layer; or the AgGd film layer and the Zn film layer are arranged between the silver film layer and the sacrificial film layer, and the AgGd film layer is also arranged between the silver film layer and the dielectric film layer.
Of course, in some embodiments, the sacrificial film layer in the film layer assembly may also be disposed between the dielectric film layer and the silver film layer, that is, the film layer assembly includes the dielectric film layer, the sacrificial film layer and the silver film layer which are sequentially stacked along the substrate.
Of course, in some embodiments, the positions of the AgGd film layer 4 and the Zn film layer 5 may be interchanged, as shown in fig. 2.
Alternatively, a sacrificial film may be deposited prior to depositing the silver film 3.
Fig. 3 shows another structure of the thin-film device of the present invention, which is different from the thin-film device shown in fig. 1 in that: the number of film layer subassembly is two, and two film layer subassemblies stack gradually and set up, and its concrete structure is for including the base plate 1, first dielectric film layer 2, first silver rete 3, first AgGd rete 4, first Zn rete 5, first sacrificial film layer 6, second dielectric film layer 21, second silver rete 31, second AgGd rete 41, second Zn rete 51, second sacrificial film layer 61, top layer dielectric film layer 7 and the protection film layer 8 that stacks gradually. The sheet resistance of the thin film device of fig. 3 is lower relative to the thin film device of fig. 1.
Fig. 4 shows another structure of the thin-film device of the present invention, which is different from the thin-film device shown in fig. 3 in that: the number of the film layer components is three, the three film layer components are sequentially stacked, and the specific structure of the three film layer components comprises a substrate 1, a first dielectric film layer 2, a first silver film layer 3, a first AgGd film layer 4, a first Zn film layer 5, a first sacrificial film layer 6, a second dielectric film layer 21, a second silver film layer 31, a second AgGd film layer 41, a second Zn film layer 51, a second sacrificial film layer 61, a third dielectric film layer 22, a third silver film layer 32, a third AgGd film layer 42, a third Zn film layer 52, a third sacrificial film layer 62, a top dielectric film layer 7 and a protection film layer 8 which are sequentially stacked. The sheet resistance of the thin film device of fig. 4 is lower relative to the thin film device of fig. 3.
Fig. 5 shows another structure of the thin-film device of the present invention, which is different from the thin-film device shown in fig. 4 in that: the number of the film layer components is four, the four film layer components are sequentially stacked, and the specific structure of the film layer components comprises a substrate 1, a first dielectric film layer 2, a first silver film layer 3, a first AgGd film layer 4, a first Zn film layer 5, a first sacrificial film layer 6, a second dielectric film layer 21, a second silver film layer 31, a second AgGd film layer 41, a second Zn film layer 51, a second sacrificial film layer 61, a third dielectric film layer 22, a third silver film layer 32, a third AgGd film layer 42, a third Zn film layer 52, a third sacrificial film layer 62, a fourth dielectric film layer 23, a fourth silver film layer 33, a fourth Zn film layer 53, a fourth AgGd film layer 43, a fourth sacrificial film layer 63, a top dielectric film layer 7 and a protective film layer 8 which are sequentially stacked. The sheet resistance of the thin film device of fig. 5 is lower relative to the thin film device of fig. 4.
The thin film device of the present invention will be described below by way of several specific examples. In each of the following examples and comparative examples, each film layer was sequentially coated on the air surface of a clean, 2.0mm thick, clear float glass base sheet (designated as glass substrate 2.0C).
After the single glass substrate is subjected to high-temperature coating heat treatment, the outermost coating layer of the coated glass substrate is an outermost protective film layer, and the outermost protective film layer is outwards laminated with PVB with the thickness of 0.76mm and the other transparent float glass substrate without a coating with the thickness of 2.0mm in sequence to form the coated laminated glass. The formed coated laminated glass needs to pass a knocking experiment, one of the most important physical property tests, and the experiment is a detection method for measuring the adhesive property between a film layer and PVB and glass. The company Solutia europe.a. classified the laminated glass strike standard into grade 9. The standard grades were specified as 1 st to 9 th grades, depending on the amount of cullet sticking to the PVB after striking from a few to many. The required knocking grades of the laminated glass meeting the requirements of national standard GB9656-2003 are as follows: the knocking grade is not less than 3 grade and not more than 6 grade.
The knocking experiment steps are as follows:
a. cutting two test pieces with the size of 100 multiplied by 300mm from the whole coated laminated glass; b. storing the two samples at-18 +/-2 ℃ for at least 2 hours; c. taking out the sample from the low-temperature position, placing the sample at normal temperature for 1-2 minutes, and then placing the sample on a sample box to knock the sample box by using an iron hammer; d. after knocking, allowing the sample to return to room temperature and then comparing with a standard sample, but waiting until condensed water is volatilized; e. the grade of the knocking experiment can be judged by carefully comparing the sample with the standard sample wafer.
Example 1
ZnSnO with a thickness of 32nm was sequentially plated on the glass substrate 2.0C (substrate 1)2A film layer; ZnO with thickness of 10nm2The film layer serves as a dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; a Zn layer 5 with a thickness of 0.1 nm; an AgGd film layer 4 with a thickness of 0.05nm, wherein the content of Gd is 90 at%; a Ti film layer (sacrificial film layer 6) with the thickness of 3 nm; ZnSnO with thickness of 23nm2A film layer (top dielectric film layer 7); si with a thickness of 17nm3N4The film layer is used as a protective film layer 8, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in figure 2.
And (3) testing optical performance:
before heat treatment, the visible light transmittance of the single piece of coated glass is 80.6 percent; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 82.1 percent and the square resistance is 5.2 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 76.5 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 2
ZnSnO with a thickness of 35nm was sequentially plated on the glass substrate 2.0C (substrate 1)2A film layer; ZnO with thickness of 8nm2The film layer serves as a dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; a Zn layer 5 with a thickness of 0.5 nm; an AgGd film layer 4 with a thickness of 0.5nm, wherein the content of Gd is 50 at%; ti film layer with thickness of 2nm (sacrificial)Livestock membrane layer 6); ZnSnO with thickness of 28nm2A film layer (top dielectric film layer 7); si with a thickness of 12nm3N4The film layer is used as a protective film layer 8, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in figure 2.
And (3) testing optical performance:
the visible light transmittance of the single piece of coated glass is 81.1% before the heat treatment; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 82.7 percent and the square resistance is 5.1 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 76.9 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 3
ZnSnO with the thickness of 32nm is sequentially plated on a glass substrate 2.0C (substrate)2A film layer; ZnO with thickness of 10nm2The film layer is used as a dielectric film layer; an AgGd film layer with a thickness of 0.05nm, wherein the content of Gd is 10 at%; a silver film layer with the thickness of 12 nm; a Zn layer with a thickness of 0.1 nm; a Ti film layer (sacrificial film layer) with the thickness of 3 nm; ZnSnO with thickness of 23nm2A film layer (top dielectric film layer); si with a thickness of 17nm3N4The film layer is used as a protective film layer to obtain the heat-treatable coated glass, namely the film device.
And (3) testing optical performance:
before heat treatment, the visible light transmittance of the single piece of coated glass is 80.9 percent; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 82.3 percent and the square resistance is 5.4 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 76.7 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 4
ZnSnO with the thickness of 32nm is sequentially plated on a glass substrate 2.0C (substrate)2A film layer; ZnO with thickness of 10nm2The film layer is used as a dielectric film layer; an AgGd film layer with a thickness of 0.05nm, wherein the content of Gd is 10 at%; a silver film layer with the thickness of 12 nm; a Zn layer with a thickness of 0.1 nm; an AgGd film layer with a thickness of 0.05nm, wherein the content of Gd is 77.5 at%; a Ti film layer (sacrificial film layer) with the thickness of 3 nm; ZnSnO with thickness of 23nm2A film layer (top dielectric film layer); si with a thickness of 17nm3N4The film layer is used as a protective film layer to obtain the heat-treatable coated glass, namely the film device.
And (3) testing optical performance:
before heat treatment, the visible light transmittance of the single piece of coated glass is 80.1 percent; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 81.9 percent and the square resistance is 5.0 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 75.8 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 5
ZnSnO with the thickness of 35nm is sequentially plated on a glass substrate 2.0C (substrate)1.8A film layer (dielectric film layer); an AgGd film layer with the thickness of 1nm, wherein the content of Gd is 10 at%; a silver film layer with the thickness of 8 nm; an AgGd film layer with a thickness of 10nm, wherein the content of Gd is 50 at%; a Zn layer with a thickness of 0.5 nm; a NiTi film layer (sacrificial film layer) with the thickness of 0.1 nm; ZnSnO with thickness of 77nm1.8A film layer (dielectric film layer); a silver film layer with the thickness of 11 nm; an AgGd film layer with the thickness of 2nm, wherein the content of Gd is 80 at%; a Zn layer with a thickness of 6 nm; a NiTi film layer (sacrificial film layer) with the thickness of 3 nm; ZnSnO with thickness of 28nm1.8A film layer (top dielectric film layer); TiO with thickness of 8nm2The film layer is used as a protective film layer to obtain the heat-treatable coated glass, namely the film device.
And (3) testing optical performance:
the visible light transmittance of the single piece of coated glass is 78.9 percent before heat treatment; after heat treatment at 585 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 81.6 percent, and the square resistance is 3.1 omega/□; then the film-coated laminated glass obtained after the procedures of washing, laminating and the like has the visible light transmittance of 74.9 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 6
Si with a thickness of 15nm was sequentially plated on a glass substrate 2.0C (substrate 1)3N4A film layer; ZnSnO with thickness of 18nm2.3The film layer serves as a first dielectric film layer 2; a silver film layer (first silver film layer 3) having a thickness of 12 nm; an AgGd film layer (first AgGd film layer 4) having a thickness of 1nm, wherein the content of Gd is 50 at%; a Zn layer (first Zn film layer 5) having a thickness of 0.5 nm; a TiMo film layer (first sacrificial film layer 6) having a thickness of 2 nm; ZnSnO with thickness of 73nm2.3A film layer (second dielectric film layer 21); a silver film layer (second silver film layer 31) having a thickness of 10 nm; an AgGd film layer (second AgGd film layer 41) having a thickness of 1nm, wherein the content of Gd is 77.5 at%; a Zn layer (second Zn film layer 51) having a thickness of 0.3 nm; a NiCr film layer (second sacrificial film layer 61) having a thickness of 1 nm; ZnSnO with thickness of 68nm2.3A film layer (third dielectric film layer 22); a silver film layer (third silver film layer 32) having a thickness of 9 nm; an AgGd film layer (third AgGd film layer 42) having a thickness of 0.05nm, wherein the content of Gd is 90 at%; a Zn layer (third Zn film layer 52) having a thickness of 3 nm; a NiTi film layer (third sacrificial film layer 62) having a thickness of 8 nm; AlZnO with thickness of 20nm2A film layer (top dielectric film layer 7); ZrO of thickness 15nm2The film layer is used as a protective film layer 8, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in figure 4.
And (3) testing optical performance:
the visible light transmittance of the single piece of coated glass before heat treatment was 77.3%; after heat treatment at 590 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 79.5 percent, and the square resistance is 2.0 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 70.9 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 7
Sequentially plating a CdZnS film layer with the thickness of 8nm on a glass substrate 2.0C (substrate 1); si with a thickness of 18nm3N4A film layer; a ZnO film layer with the thickness of 10nm is used as a first dielectric film layer 2; a silver film layer (first silver film layer 3) having a thickness of 12 nm; an AgGd film layer (first AgGd film layer 4) having a thickness of 2nm, wherein the content of Gd is 50 at%; a Zn layer (first Zn film layer 5) having a thickness of 0.5 nm; a TiMo film layer (first sacrificial film layer 6) having a thickness of 2 nm; ZnSnO with thickness of 65nm2.3A film layer; a ZnO film layer with a thickness of 8nm is used as the second dielectric film layer 21; a silver film layer (second silver film layer 31) having a thickness of 10 nm; an AgGd film layer (second AgGd film layer 42) having a thickness of 1nm, wherein the content of Gd is 50 at%; a Zn layer (second Zn film layer 51) having a thickness of 0.8 nm; a NiCrMo film layer (second sacrificial film layer 61) with a thickness of 2 nm; ZnSnO with thickness of 68nm2.3A film layer (third dielectric film layer 22); a silver film layer (third silver film layer 32) having a thickness of 8 nm; an AgGd film layer (third AgGd film layer 42) having a thickness of 0.1nm, wherein the content of Gd is 50 at%; a Zn layer (third Zn film layer 52) having a thickness of 1 nm; a NiTi film layer (third sacrificial film layer 62) having a thickness of 3 nm; AlZnO with thickness of 70nm2A film layer; a ZnO film layer with a thickness of 8nm as the fourth dielectric film layer 23; a silver film layer (fourth silver film layer 33) having a thickness of 6 nm; an AgGd film layer (fourth AgGd film layer 43) having a thickness of 2nm, wherein the content of Gd is 90 at%; a Zn layer (fourth Zn film layer 53) having a thickness of 8 nm; a NiCr film layer (fourth sacrificial film layer 63) having a thickness of 2 nm; AlZnO with thickness of 25nm2A film layer (top dielectric film layer 7); with a thickness of 15nmZrO2The film layer is used as a protective film layer 8, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in fig. 5.
And (3) testing optical performance:
the visible light transmittance of the single piece of coated glass is 74.6 percent before heat treatment; after heat treatment at 590 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 76.1 percent, and the square resistance is 1.0 omega/□; then, the film-coated laminated glass obtained after the processes of washing, laminating and the like has the visible light transmittance of 69.2 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 8
ZnSnO with the thickness of 36nm is sequentially plated on the glass substrate 2.0C1.8A film layer; a silver film layer with the thickness of 9 nm; a NiTi film layer with the thickness of 0.1 nm; ZnSnO with thickness of 79nm1.8A film layer; a silver film layer with the thickness of 11 nm; a NiTi film layer with the thickness of 3 nm; ZnSnO with thickness of 26nm1.8A film layer; TiO with thickness of 7nm2The film layer is used as a protective film layer to obtain the heat-treatable coated glass, namely the film device.
And (3) testing optical performance:
the visible light transmittance of the single piece of coated glass before heat treatment was 77.3%; after heat treatment at 585 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 79.8 percent, and the square resistance is 4.4 omega/□; then the film-coated laminated glass obtained after the procedures of washing, laminating and the like has the visible light transmittance of 73.6 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 9
The coated glass obtained in example 5 was subjected to a high-temperature heat treatment, and left to stand in a heating furnace at 620 ℃ for 15 minutes, and then the sheet resistance of the single piece of coated glass was measured to be 5.1. omega./□.
The coated laminated glass obtained by the procedures of laminating the single piece of film glass and the like can meet the requirements according to GB9656-2003, an impact experiment, an irradiation resistance experiment, a damp-heat cycle experiment and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 10
The coated glass obtained in example 8 was subjected to a high-temperature heat treatment, and left to stand in a heating furnace at 620 ℃ for 15 minutes, and then the sheet resistance of the single piece of coated glass was measured to be 23.1. omega./□.
The coated laminated glass obtained by the single piece of coated glass through the working procedures of laminating and the like can not meet the requirements according to GB9656-2003, an impact experiment, an irradiation resistance experiment, a damp-heat cycle experiment and the like. Through detection, the knocking experiment grade is 2 grade, which shows that the adhesive force between the film layer and the glass and PVB is poor.
A comparison of example 9 with example 10 shows that: the sheet resistance of example 9 is not much different from that of example 5, while the sheet resistance of example 10 is much larger than that of example 8, indicating that the silver film layer is damaged to some extent after the high temperature heat treatment of example 10; on the other hand, an AgGd film layer and a Zn layer are formed between the silver film layer and the sacrificial layer, and the content of Gd in the AgGd film layer is less than or equal to 90 at%; or forming an AgGd film layer between the silver film layer and the dielectric layer, wherein the content of Gd in the AgGd film layer is less than or equal to 90at percent, and simultaneously forming a Zn layer between the silver layer and the sacrificial layer; or forming an AgGd film layer and a Zn layer between the silver film layer and the sacrificial layer, and simultaneously forming an AgGd film layer between the silver film layer and the dielectric layer, wherein the content of Gd in the AgGd film layer is less than or equal to 90 at%; can improve the high temperature resistance, the mechanical resistance and the chemical stability of the whole membrane system structure.
The thin film device of the invention can be used for manufacturing an interlayer thin film device or a hollow thin film device.
While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The utility model provides a thin film device, includes base plate, membrane layer subassembly, top layer dielectric film layer and the protection film layer that stacks gradually, the membrane layer subassembly includes along outside dielectric film layer, silver-colored rete and the sacrificial film layer that stacks gradually of base plate, or the membrane layer subassembly includes along outside dielectric film layer, sacrificial film layer and the silver-colored rete that stacks gradually of base plate, its characterized in that: the film component also comprises an AgGd film layer and a Zn film layer, wherein the AgGd film layer and the Zn film layer are laminated between the silver film layer and the sacrificial film layer; or the Zn film layer is laminated between the silver film layer and the sacrificial film layer, and the AgGd film layer is laminated between the silver film layer and the dielectric film layer; or the AgGd film layer and the Zn film layer are laminated between the silver film layer and the sacrificial film layer, and the AgGd film layer is laminated between the silver film layer and the dielectric film layer; the content of Gd in the AgGd film layer is less than or equal to 90at percent.
2. The thin film device of claim 1, wherein: the content of Gd in the AgGd film layer is less than or equal to 80at percent.
3. The thin film device of claim 2, wherein: the content of Gd in the AgGd film layer is less than or equal to 50at percent.
4. The thin film device of claim 1, wherein: the thickness of the AgGd film layer is 0.05-10nm, and the thickness of the Zn film layer is less than or equal to 10 nm.
5. The thin film device of claim 1, wherein: the sacrificial film layer is made of NiCr, Ti or NiCrOx、Cr、NiCrMo、CrOx、MoOx、TiMo、TiMoOx、NiTi、TiOxAnd NiTiOxAny one of them or any combination thereof.
6. The thin film device of claim 1, wherein: the thickness of the sacrificial film layer is 0.1-8 nm.
7. The thin film device of any of claims 1-6, wherein: the number of the film layer assemblies is two, and the two film layer assemblies are sequentially stacked.
8. The thin film device of any of claims 1-6, wherein: the number of the film layer assemblies is three, and the three film layer assemblies are sequentially stacked.
9. The thin film device of any of claims 1-6, wherein: the number of the film layer assemblies is four, and the four film layer assemblies are sequentially stacked.
10. The thin film device of any of claims 1-6, wherein: the thin film device is used for manufacturing an interlayer thin film device or a hollow thin film device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010216112.6A CN111285621A (en) | 2020-03-25 | 2020-03-25 | Thin film device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010216112.6A CN111285621A (en) | 2020-03-25 | 2020-03-25 | Thin film device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111285621A true CN111285621A (en) | 2020-06-16 |
Family
ID=71019618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010216112.6A Pending CN111285621A (en) | 2020-03-25 | 2020-03-25 | Thin film device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111285621A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11277668A (en) * | 1998-03-27 | 1999-10-12 | Nippon Sheet Glass Co Ltd | Solar radiation shielding glass |
| KR20080064453A (en) * | 2007-01-05 | 2008-07-09 | 주식회사 하이닉스반도체 | Semiconductor device and method for fabrication of the same |
| CN202170300U (en) * | 2011-07-20 | 2012-03-21 | 福耀玻璃工业集团股份有限公司 | Low-radiation coated glass |
| CN105621901A (en) * | 2015-12-23 | 2016-06-01 | 内蒙古坤瑞玻璃股份有限公司 | Rare earth doped and modified single crystal silver Low-E glass and preparation method thereof |
| CN212770481U (en) * | 2020-03-25 | 2021-03-23 | 四川猛犸半导体科技有限公司 | Thin film device |
-
2020
- 2020-03-25 CN CN202010216112.6A patent/CN111285621A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11277668A (en) * | 1998-03-27 | 1999-10-12 | Nippon Sheet Glass Co Ltd | Solar radiation shielding glass |
| KR20080064453A (en) * | 2007-01-05 | 2008-07-09 | 주식회사 하이닉스반도체 | Semiconductor device and method for fabrication of the same |
| CN202170300U (en) * | 2011-07-20 | 2012-03-21 | 福耀玻璃工业集团股份有限公司 | Low-radiation coated glass |
| CN105621901A (en) * | 2015-12-23 | 2016-06-01 | 内蒙古坤瑞玻璃股份有限公司 | Rare earth doped and modified single crystal silver Low-E glass and preparation method thereof |
| CN212770481U (en) * | 2020-03-25 | 2021-03-23 | 四川猛犸半导体科技有限公司 | Thin film device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11097513B2 (en) | Laminated glass pane and use thereof | |
| US20080308145A1 (en) | Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same | |
| JP2011513101A (en) | Transparent substrate with anti-reflective coating | |
| CN104882495A (en) | Transparent conductive window layer for solar cell, and CIGS-base thin-film solar cell | |
| JP2013521642A (en) | Photovoltaic cell | |
| JP4540311B2 (en) | Transparent conductive film and method for producing the same | |
| CN212770481U (en) | Thin film device | |
| CN212770478U (en) | Thin film device | |
| CN212770482U (en) | Thin film device | |
| CN212770479U (en) | Thin film device | |
| CN213475793U (en) | Thin film device | |
| CN212770483U (en) | Thin film device | |
| CN212770484U (en) | Thin film device | |
| CN213232020U (en) | Thin film device | |
| CN101752453A (en) | Preparation method of glass-substrate double-side CIGS thin film solar cell module | |
| CN212770480U (en) | Thin film device | |
| CN111362590A (en) | Thin film device | |
| CN212770485U (en) | Thin film device | |
| CN111285621A (en) | Thin film device | |
| CN111253084A (en) | Thin film device | |
| CN111285619A (en) | Thin film device | |
| CN111253086A (en) | Thin film device | |
| CN111253083A (en) | Thin film device | |
| CN111285620A (en) | Thin film device | |
| CN111393036A (en) | Thin film device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |