CN213232020U - Thin film device - Google Patents
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- CN213232020U CN213232020U CN202020393131.1U CN202020393131U CN213232020U CN 213232020 U CN213232020 U CN 213232020U CN 202020393131 U CN202020393131 U CN 202020393131U CN 213232020 U CN213232020 U CN 213232020U
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Abstract
The utility model discloses a thin film device, including the base plate, the rete subassembly, top layer dielectric film layer and the protection film layer that stack gradually, the rete subassembly includes along base plate outside dielectric film layer, silver film layer and the sacrificial film layer that stacks gradually, or the rete subassembly includes along base plate outside dielectric film layer, sacrificial film layer and the silver film layer that stacks gradually, the rete subassembly still includes BiMg rete and AgZr rete, BiMg rete and AgZr rete stack between silver film layer and sacrificial film layer or between silver film layer and dielectric film layer; or the BiMg film layer and the AgZr film layer are laminated between the silver film layer and the sacrificial film layer, and the BiMg film layer and/or the AgZr film layer are laminated between the silver film layer and the dielectric film layer. The utility model discloses can improve the stability of membrane system at high temperature thermal treatment, can improve the chemical stability of this thin film device again and improve its mechanical properties, and have high visible light transmissivity, low resistance.
Description
Technical Field
The utility model belongs to the technical field of the thin film device, concretely relates to can carry out high temperature heat treatment's thin film device.
Background
Ordinary glass does not have the function of thermal insulation, and along with the enhancement of energy-saving consciousness of people, coated glass (film devices) has been used in many buildings or automobiles at present, and the coated glass can play a good thermal insulation effect, so that the comfort level in the interior of the building or in the automobile is increased.
Solar cells are photovoltaic elements for generating electricity directly from sunlight. Due to the increasing demand for clean energy, the manufacture of solar cells has been greatly expanded in recent years and is also continuously expanding. Transparent conductive oxide films are widely used in solar cells due to their versatility as transparent coatings and electrodes. In many cases, lowering the resistance by increasing the dopant of the transparent conductive oxide film results in an undesirable lowering of transparency, while some properties of the transparent conductive oxide film are degraded after being subjected to a high-temperature heat treatment. In order to further reduce the resistance of the transparent conductive oxide film, a thicker film layer is required, which leads to a decrease in the transmittance of the film layer, an increase in the stress of the film layer, an increase in the instability of the film layer, and an increase in the manufacturing cost of the film layer.
Thin film devices used in the application fields of solar cells, buildings, automobiles and the like are required to be subjected to high-temperature heat treatment in the preparation process, so that the thin film devices are required to be capable of resisting the high-temperature heat treatment and simultaneously have high visible light transmittance, low resistance, good mechanical resistance, high stability and the like.
Disclosure of Invention
An object of the utility model is to provide a can improve the stability of membrane system at high temperature thermal treatment, can improve the chemical stability of this thin film device again and improve its mechanical properties, and have the thin film device of high visible light transmissivity, low resistance and be used for solving the above-mentioned technical problem who exists.
In order to achieve the above object, the utility model adopts the following technical scheme: a film device comprises a substrate, a film component, a top dielectric film layer and a protective film layer which are sequentially stacked, wherein the film component comprises a dielectric film layer, a silver film layer and a sacrificial film layer which are sequentially stacked outwards along the substrate, or the film component comprises a dielectric film layer, a sacrificial film layer and a silver film layer which are sequentially stacked outwards along the substrate, the film component further comprises a BiMg film layer and an AgZr film layer, and the BiMg film layer and the AgZr film layer are stacked between the silver film layer and the sacrificial film layer or between the silver film layer and the dielectric film layer; or the BiMg film layer and the AgZr film layer are stacked between the silver film layer and the sacrificial film layer, and the BiMg film layer and/or the AgZr film layer are stacked between the silver film layer and the dielectric film layer.
Furthermore, the content of Bi in the BiMg film layer is 10 wt% -82 wt%, and the content of Zr in the AgZr film layer is more than or equal to 50 at%.
Furthermore, the content of Bi in the BiMg film layer is 20-65 wt%; the content of Zr in the AgZr film layer is more than or equal to 80at percent.
Further, the BiMg film layer contains oxygen; the AgZr film layer contains carbon.
Further, the thickness of the BiMg film layer is less than or equal to 10nm, and preferably less than or equal to 7 nm; the thickness of the AgZr film layer is 0.05-10nm, and the preferable thickness is 1-8 nm.
Further, the thickness of the sacrificial film layer is 0.1-8nm, and the preferable thickness is 1-5 nm.
Further, the sacrificial film layer is made of NiCr, Ti or NiCrOx、Cr、NiCrMo、CrOx、MoOx、TiMo、TiMoOx、NiTi、TiOxAnd NiTiOxAny one of them or any combination thereof.
Furthermore, the dielectric film layer, the top dielectric film layer and the protective film layer are made of SnOx、TiOx、SiOx、SiNx、ZnOx、AlZnOx、ZnxSnyOn、ZrOx、ZnxTiyOn、NbOx、TixNbyOn、SiNOxAny one or any combination of ITO, AZO, IWO, BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide-based material and metal sulfide.
Further, the thickness of the dielectric film layer, the top dielectric film layer and the protective film layer is 1-100 nm.
Further, the substrate is a glass substrate, a polyimide substrate, or a substrate having a solar cell structure.
Furthermore, the number of the film layer assemblies is two, and the two film layer assemblies are sequentially stacked.
Furthermore, the number of the film layer assemblies is three, and the three film layer assemblies are sequentially stacked.
Furthermore, the number of the film layer assemblies is four, and the four film layer assemblies are sequentially stacked.
Further, the thin film device is used for manufacturing an interlayer thin film device or a hollow thin film device.
The utility model has the advantages of:
the utility model forms a BiMg film layer and an AgZr film layer between the silver film layer and the sacrificial film layer; or a BiMg film layer and an AgZr film layer are formed between the silver film layer and the dielectric film layer; or a BiMg film layer and an AgZr film layer are formed between the silver film layer and the sacrificial film layer, and simultaneously a BiMg film layer and/or an AgZr film layer are formed between the silver film layer and the dielectric film layer, and the BiMg film layer and the AgZr film layer can form good interfaces with the silver film layer, so that the mechanical property and the optical property of the whole film system can be improved; the work functions of the BiMg film layer, the AgZr film layer and the silver film layer are well matched, so that good electrical properties can be obtained, the stability of the film system in high-temperature heat treatment is improved, and the chemical stability and the mechanical properties of the film device can be improved. Furthermore, the utility model discloses still have high light transmissivity, low resistance.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a thin film device according to the present invention;
fig. 2 is a schematic structural diagram of another thin film device according to the present invention;
fig. 3 is a schematic structural diagram of a third thin film device according to the present invention;
fig. 4 is a schematic structural diagram of a fourth thin-film device according to the present invention.
Detailed Description
To further illustrate the embodiments, the present invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. With these references, one of ordinary skill in the art will appreciate other possible embodiments and advantages of the present invention. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.
The present invention will now be further described with reference to the accompanying drawings and detailed description.
It is first explained that the tin oxide-based material in the present invention is a material in which tin oxide is doped with fluorine, a material in which tin oxide is doped with iodine, a material in which tin oxide is doped with antimony, or any combination thereof; the utility model provides a ITO indicates that indium oxide dopes the material of tin, AZO indicates that zinc oxide dopes the material of aluminium, IWO indicates that indium oxide dopes the material of tungsten, BZO indicates that zinc oxide dopes the material of boron, GZO indicates that zinc oxide dopes the material of gallium, IZO indicates that zinc oxide dopes the material of indium, IMO indicates that indium oxide dopes the material of molybdenum, ICO indicates that indium oxide dopes the material of cerium, ITIO indicates that indium oxide dopes the material of titanium, IGZO indicates that zinc oxide dopes the material of indium gallium.
As shown in fig. 1, a thin film device includes a substrate 1, a film layer assembly, a top dielectric film layer 7 and a protective film layer 8, which are sequentially stacked, the film layer assembly includes a dielectric film layer 2, a silver film layer 3 and a sacrificial film layer 6, which are sequentially stacked along the substrate 1, the film layer assembly further includes a BiMg film layer 4 and an AgZr film layer 5, and the BiMg film layer 4 and the AgZr film layer 5 are stacked between the silver film layer 3 and the sacrificial film layer 6.
Preferably, the content of Bi in the BiMg film layer 4 is 10 wt% -82 wt%, so that a good interface is obtained in the film layer; the Zr content in the AgZr film layer 5 is more than or equal to 50at percent, so that the film layer can be better deposited in a two-dimensional form.
More preferably, the content of Bi in the BiMg film layer 4 is 20 wt% -65 wt%, so that a better interface is obtained for the film layer; the Zr content in the AgZr film layer 5 is more than or equal to 80at percent, so that the film layer can be better deposited in a two-dimensional form.
Preferably, the BiMg film layer 4 contains oxygen, so that the optical performance of the film system can be effectively improved; the AgZr film layer 5 contains carbon, so that the film layer can be prevented from being damaged by the external environment.
Preferably, the thickness of the BiMg film layer 4 is less than or equal to 10nm, preferably less than or equal to 7nm, so that light transmission is facilitated, and better adhesion between the film layers is facilitated; the thickness of the AgZr film layer 5 is 0.05-10nm, preferably 1-8nm, which can make the bonding with other film layers stronger.
Preferably, the thickness of the sacrificial film layer 6 is 0.1 to 8nm, preferably 1 to 5nm, if the film layer is too thick, the adhesive properties of the entire film system are reduced and the optical properties are reduced, if the film layer is too thin, the sacrificial film layer does not function as intended.
Specifically, the material of the sacrificial film layer 6 may be NiCr, Ti, NiCrOx、Cr、NiCrMo、CrOx、MoOx、TiMo、TiMoOx、NiTi、TiOxAnd NiTiOxAny one of them or any combination thereof.
The dielectric film layer 2, the top dielectric film layer 7 and the protective film layer 8 can be made of SnOx、TiOx、SiOx、SiNx、ZnOx、AlZnOx、ZnxSnyOn、ZrOx、ZnxTiyOn、NbOx、TixNbyOn、SiNOxAny one or any combination of ITO, AZO, IWO, BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide-based material and metal sulfide.
The substrate 1 is a glass substrate, a polyimide substrate, a substrate having a solar cell structure, or the like.
Preferably, the thickness of the dielectric layer 2, the top dielectric layer 7 and the protective layer 8 is 1-100nm, which is too thin to be effective, and too thick to be effective in light transmission, adhesion between the layers, and manufacturing cost.
Of course, in some embodiments, the BiMg film layer and the AgZr film layer may also be disposed between the silver film layer and the dielectric film layer, or the BiMg film layer and the AgZr film layer may be disposed between the silver film layer and the sacrificial film layer, and a BiMg film layer and/or an AgZr film layer may also be disposed between the silver film layer and the dielectric film layer.
Of course, in some embodiments, the sacrificial film layer in the film layer assembly may also be disposed between the dielectric film layer and the silver film layer, that is, the film layer assembly includes the dielectric film layer, the sacrificial film layer and the silver film layer which are sequentially stacked along the substrate.
Of course, in some embodiments, the positions of the BiMg film layer 4 and the AgZr film layer 5 may be interchanged.
Alternatively, a sacrificial film may be deposited prior to depositing the silver film 3.
Fig. 2 shows another structure of the thin film device of the present invention, which is different from the thin film device shown in fig. 1 in that: the number of film layer assembly is two, and two film layer assembly stack gradually the setting, and its concrete structure is for including the base plate 1 that stacks gradually, first dielectric film layer 2, first silver rete 3, first BiMg rete 4, first AgZr rete 5, first sacrificial film layer 6, second dielectric film layer 21, second silver rete 31, second BiMg rete 41, second AgZr rete 51, second sacrificial film layer 61, top layer dielectric film layer 7 and protection film layer 8. The sheet resistance of the thin film device of fig. 2 is lower relative to the thin film device of fig. 1.
Fig. 3 shows another structure of the thin film device of the present invention, which is different from the thin film device shown in fig. 2 in that: the number of the film layer components is three, the three film layer components are sequentially stacked, and the specific structure of the three film layer components comprises a substrate 1, a first dielectric film layer 2, a first silver film layer 3, a first BiMg film layer 4, a first AgZr film layer 5, a first sacrificial film layer 6, a second dielectric film layer 21, a second silver film layer 31, a second BiMg film layer 41, a second AgZr film layer 51, a second sacrificial film layer 61, a third dielectric film layer 22, a third silver film layer 32, a third BiMg film layer 42, a third AgZr film layer 52, a third sacrificial film layer 62, a top dielectric film layer 7 and a protection film layer 8 which are sequentially stacked. The sheet resistance of the thin film device of fig. 3 is lower relative to the thin film device of fig. 2.
Fig. 4 shows another structure of the thin film device of the present invention, which is different from the thin film device shown in fig. 3 in that: the number of the film layer assemblies is four, the four film layer assemblies are sequentially stacked, and the specific structure of the film layer assembly comprises a substrate 1, a first dielectric film layer 2, a first silver film layer 3, a first BiMg film layer 4, a first AgZr film layer 5, a first sacrificial film layer 6, a second dielectric film layer 21, a second silver film layer 31, a second BiMg film layer 41, a second AgZr film layer 51, a second sacrificial film layer 61, a third dielectric film layer 22, a third silver film layer 32, a third BiMg film layer 42, a third AgZr film layer 52, a third sacrificial film layer 62, a fourth dielectric film layer 23, a fourth silver film layer 33, a fourth AgZr film layer 53, a fourth BiMg film layer 43, a fourth sacrificial film layer 63, a top dielectric film layer 7 and a protective film 8 which are sequentially stacked. The sheet resistance of the thin film device of fig. 4 is lower relative to the thin film device of fig. 3.
The thin-film device of the present invention will be described below with reference to several embodiments. In each of the following examples and comparative examples, each film layer was sequentially coated on the air surface of a clean, 2.0mm thick, clear float glass base sheet (designated as glass substrate 2.0C).
After the single glass substrate is subjected to high-temperature coating heat treatment, the outermost coating layer of the coated glass substrate is an outermost protective film layer, and the outermost protective film layer is outwards laminated with PVB with the thickness of 0.76mm and the other transparent float glass substrate without a coating with the thickness of 2.0mm in sequence to form the coated laminated glass. The formed coated laminated glass needs to pass a knocking experiment, one of the most important physical property tests, and the experiment is a detection method for measuring the adhesive property between a film layer and PVB and glass. The company Solutia europe.a. classified the laminated glass strike standard as grade 9. The standard grades were specified as 1 st to 9 th grades, depending on the amount of cullet sticking to the PVB after striking from a few to many. The required knocking grades of the laminated glass meeting the requirements of national standard GB9656-2003 are as follows: the knocking grade is not less than 3 grade and not more than 6 grade.
The knocking experiment steps are as follows:
a. cutting two test pieces with the size of 100 multiplied by 300mm from the whole coated laminated glass; b. storing the two samples at-18 +/-2 ℃ for at least 2 hours; c. taking out the sample from the low-temperature position, placing the sample at normal temperature for 1-2 minutes, and then placing the sample on a sample box to knock the sample box by using an iron hammer; d. after knocking, allowing the sample to return to room temperature and then comparing with a standard sample, but waiting until condensed water is volatilized; e. the grade of the knocking experiment can be judged by carefully comparing the sample with the standard sample wafer.
Example 1
Si with a thickness of 38nm was sequentially plated on a glass substrate 2.0C (substrate 1)3N4A film layer; ZnO with thickness of 8nm2The film layer serves as a dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; a 1nm thick BiMg film layer 4, wherein the content of Bi is 82 wt%; an AgZr film layer 5 with the thickness of 0.05nm, wherein the content of Zr is 50at percent, and the content of carbon is 1at percent; a NiCr film layer (sacrificial film layer 6) with the thickness of 2 nm; ZnSnO with thickness of 23nm2A film layer (top dielectric film layer 7); si with a thickness of 15nm3N4The film layer is used as a protective film layer 8, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in figure 1.
And (3) testing optical performance:
the visible light transmittance of the single piece of coated glass is 81.1% before the heat treatment; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 83.3 percent and the square resistance is 4.2 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 77.8 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 2
Si with a thickness of 35nm was sequentially plated on a glass substrate 2.0C (substrate 1)3N4A film layer; ZnO with thickness of 8nm2The film layer serves as a dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; a 1nm thick BiMg film layer 4, wherein the content of Bi is 50 wt%; an AgZr film layer 5 with a thickness of 0.05nm, wherein the content of Zr is 85at percent, and the content of carbon is 1at percent; a NiCr film layer (sacrificial film layer 6) with the thickness of 2 nm; ZnSnO with thickness of 25nm2A film layer (top dielectric film layer 7); si with a thickness of 13nm3N4The film layer is used as a protective film layer 8, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in figure 1.
And (3) testing optical performance:
the visible light transmittance of the single piece of coated glass is 81.5 percent before heat treatment; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 83.6 percent and the square resistance is 4.1 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 78.1 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 3
Si with a thickness of 35nm is sequentially plated on a glass substrate 2.0C (substrate)3N4A film layer; ZnO with thickness of 10nm2The film layer is used as a dielectric film layer; a BiMg film layer with the thickness of 1nm, wherein the content of Bi is 82 wt%; an AgZr film layer with the thickness of 0.05nm, wherein the content of Zr is 50at percent, and the content of carbon is 1at percent; a silver film layer with the thickness of 12 nm; a NiCr film layer (sacrificial film layer) with the thickness of 2 nm; ZnSnO with thickness of 20nm2A film layer (top dielectric film layer); si with a thickness of 18nm3N4The film layer is used as a protective film layer to obtain the heat-treatable coated glass, namely the film device.
And (3) testing optical performance:
before heat treatment, the visible light transmittance of the single piece of coated glass is 80.8 percent; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 83.1 percent and the square resistance is 4.1 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 77.2 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 4
ZnSnO with the thickness of 40nm is sequentially plated on a glass substrate 2.0C (substrate)2A film layer (dielectric film layer); an AgZr film layer with the thickness of 1nm, wherein the content of Zr is 80 at%; a silver film layer with a thickness of 10 nm; a BiMg film layer with the thickness of 2nm, wherein the content of Bi is 10wt percent, and the content of oxygen is 20at percent; an AgZr film layer with the thickness of 3nm, wherein the content of Zr is 85 at%; a NiTi film layer (sacrificial film layer) with the thickness of 0.1 nm; ZnSnO with thickness of 75nm1.8A film layer (dielectric film layer); a silver film layer with the thickness of 11 nm; a BiMg film layer with the thickness of 0.5nm, wherein the content of Bi is 10 wt%; an AgZr film layer with the thickness of 2nm, wherein the content of Zr is 85 at%; a NiTi film layer (sacrificial film layer) with the thickness of 3 nm; ZnSnO with thickness of 30nm2A film layer (top dielectric film layer); TiO with thickness of 7nm2The film layer is used as a protective film layer to obtain the heat-treatable coated glass, namely the film device.
And (3) testing optical performance:
the visible light transmittance of the single piece of coated glass is 79.4 percent before heat treatment; after heat treatment at 585 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 82.8 percent, and the square resistance is 3.8 omega/□; then the film-coated laminated glass obtained after the procedures of washing, laminating and the like has the visible light transmittance of 74.9 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 5
Si with a thickness of 20nm was sequentially plated on a glass substrate 2.0C (substrate 1)3N4A film layer; ZnSnO with thickness of 18nm2.3The film layer serves as a first dielectric film layer 2; a silver film layer (first silver film layer 3) having a thickness of 12 nm; a 1nm thick BiMg film layer (first BiMg film layer 4) in which the content of Bi is 10 wt%; an AgZr film layer (first AgZr film layer 5) with a thickness of 1nm, wherein the content of Zr is 50 at%; a TiMo film layer (first sacrificial film layer 6) having a thickness of 2 nm; ZnSnO with thickness of 75nm2.3A film layer (second dielectric film layer 21); a silver film layer (second silver film layer 31) having a thickness of 10 nm; a BiMg film layer (second BiMg film layer 41) having a thickness of 1nm, in which the content of Bi is 30 wt%; an AgZr film layer (second AgZr film layer 51) having a thickness of 1nm, wherein the content of Zr is 80 at%; a NiCr film layer (second sacrificial film layer 61) having a thickness of 1 nm; ZnSnO with thickness of 70nm2.3A film layer (third dielectric film layer 22); a silver film layer (third silver film layer 32) having a thickness of 8 nm; a 1nm thick BiMg film layer (third BiMg film layer 42) in which the content of Bi is 50 wt%; an AgZr film layer (third AgZr film layer 52) having a thickness of 1nm, wherein the Zr content is 90 at%; a NiTi film layer (third sacrificial film layer 62) having a thickness of 8 nm; AlZnO with thickness of 25nm2A film layer (top dielectric film layer 7); ZrO of thickness 15nm2The film layer is used as a protective film layer 8, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in figure 3.
And (3) testing optical performance:
the visible light transmittance of the single piece of coated glass is 77.9% before the heat treatment; after heat treatment at 590 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 79.6 percent, and the square resistance is 2.0 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 72.8 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 6
Sequentially plating a CdS film layer with the thickness of 20nm on a glass substrate 2.0C (a substrate 1); si with a thickness of 15nm3N4A film layer; a ZnO film layer with the thickness of 8nm is used as a first dielectric film layer 2; a silver film layer (first silver film layer 3) having a thickness of 12 nm; a 1nm thick BiMg film layer (first BiMg film layer 4) in which the content of Bi is 10 wt%; an AgZr film layer (first AgZr film layer 5) with the thickness of 2nm, wherein the content of Zr is 60 at%; a TiMo film layer (first sacrificial film layer 6) having a thickness of 2 nm; ZnSnO with thickness of 70nm2.3A film layer; a ZnO film layer with a thickness of 8nm is used as the second dielectric film layer 21; a silver film layer (second silver film layer 31) having a thickness of 10 nm; a BiMg film layer (second BiMg film layer 41) having a thickness of 1nm, in which the content of Bi is 30 wt%; an AgZr film layer (second AgZr film layer 51) having a thickness of 1nm, wherein the content of Zr is 50 at%; a NiCr film layer (second sacrificial film layer 61) having a thickness of 2 nm; ZnSnO with thickness of 68nm2.3A film layer (third dielectric film layer 22); a silver film layer (third silver film layer 32) having a thickness of 8 nm; a BiMg film layer (third BiMg film layer 42) with a thickness of 1nm, wherein the content of Bi is 30 wt%; an AgZr film layer (third AgZr film layer 52) having a thickness of 0.1nm, wherein the Zr content is 80 at%; a NiTi film layer (third sacrificial film layer 62) having a thickness of 3 nm; AlZnO with thickness of 75nm2A film layer; a ZnO film layer with a thickness of 8nm as the fourth dielectric film layer 23; a silver film layer (fourth silver film layer 33) having a thickness of 6 nm; an AgZr film layer (fourth AgZr film layer 53) having a thickness of 2nm, wherein the Zr content is 95 at%; a BiMg film layer (fourth BiMg film layer 43) with a thickness of 10nm, wherein the content of Bi is 50 wt%, and the oxygen content is 50 at%; a NiCr film layer (fourth sacrificial film layer 63) having a thickness of 2 nm; AlZnO with thickness of 30nm2A film layer (top dielectric film layer 7); ZrO with a thickness of 10nm2The film layer is used as a protective film layer 8, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in figure 4.
And (3) testing optical performance:
the visible light transmittance of the single piece of coated glass is 74.4 percent before heat treatment; after heat treatment at 590 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 75.9 percent, and the square resistance is 1.2 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 68.4 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 7
ZnSnO with the thickness of 40nm is sequentially plated on the glass substrate 2.0C2A film layer; an Ag film layer with the thickness of 10 nm; a NiTi film layer with the thickness of 0.1 nm; ZnSnO with thickness of 75nm1.8A film layer; an Ag film layer with the thickness of 11 nm; a NiTi film layer with the thickness of 3 nm; ZnSnO with thickness of 30nm2A film layer; TiO with thickness of 7nm2The film layer is used as a protective film layer to obtain the heat-treatable coated glass, namely the film device.
And (3) testing optical performance:
the visible light transmittance of the single piece of coated glass before heat treatment was 77.4%; after heat treatment at 585 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 79.1 percent, and the square resistance is 4.3 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 73.9 percent through detection.
Physical properties:
according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 8
The coated glass obtained in example 4 was subjected to a high-temperature heat treatment, and left to stand in a heating furnace at 620 ℃ for 14 minutes, and then the sheet resistance of the single piece of coated glass was measured to be 4.3. omega./□.
The coated laminated glass obtained by the procedures of laminating the single piece of film glass and the like can meet the requirements according to GB9656-2003, an impact experiment, an irradiation resistance experiment, a damp-heat cycle experiment and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.
Example 9
The coated glass obtained in example 7 was subjected to a high-temperature heat treatment, and left to stand in a heating furnace at 620 ℃ for 14 minutes, and then the sheet resistance of the single piece of coated glass was measured to be 22.7. omega./□.
The coated laminated glass obtained by the single piece of coated glass through the working procedures of laminating and the like can not meet the requirements according to GB9656-2003, an impact experiment, an irradiation resistance experiment, a damp-heat cycle experiment and the like. Through detection, the knocking experiment grade is 2 grade, which shows that the adhesive force between the film layer and the glass and PVB is poor.
A comparison of example 8 with example 9 shows that: the sheet resistance of example 8 is not much different from that of example 4, while the sheet resistance of example 9 is much larger than that of example 7, indicating that the silver film layer is damaged to some extent after the high temperature heat treatment of example 9; on the other hand, a BiMg film layer and an AgZr film layer are formed between the silver film layer and the sacrificial layer; or forming a BiMg film layer and an AgZr film layer between the silver film layer and the dielectric layer; or forming a BiMg film layer and an AgZr film layer between the silver film layer and the sacrificial layer, and simultaneously forming the BiMg film layer and/or the AgZr film layer between the silver film layer and the dielectric layer; can improve the high temperature resistance, the mechanical resistance and the chemical stability of the whole membrane system structure.
The utility model discloses a film device can be used for making into intermediate layer film device or hollow film device.
While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (7)
1. The utility model provides a thin film device, includes base plate, membrane layer subassembly, top layer dielectric film layer and the protection film layer that stacks gradually, the membrane layer subassembly includes along outside dielectric film layer, silver-colored rete and the sacrificial film layer that stacks gradually of base plate, or the membrane layer subassembly includes along outside dielectric film layer, sacrificial film layer and the silver-colored rete that stacks gradually of base plate, its characterized in that: the film component also comprises a BiMg film layer and an AgZr film layer, wherein the BiMg film layer and the AgZr film layer are laminated between the silver film layer and the sacrificial film layer or between the silver film layer and the dielectric film layer; or the BiMg film layer and the AgZr film layer are stacked between the silver film layer and the sacrificial film layer, and the BiMg film layer and/or the AgZr film layer are stacked between the silver film layer and the dielectric film layer.
2. The thin film device of claim 1, wherein: the thickness of the BiMg film layer is less than or equal to 10 nm; the thickness of the AgZr film layer is 0.05-10 nm.
3. The thin film device of claim 1, wherein: the thickness of the sacrificial film layer is 0.1-8 nm.
4. A thin film device according to any one of claims 1 to 3, wherein: the number of the film layer assemblies is two, and the two film layer assemblies are sequentially stacked.
5. A thin film device according to any one of claims 1 to 3, wherein: the number of the film layer assemblies is three, and the three film layer assemblies are sequentially stacked.
6. A thin film device according to any one of claims 1 to 3, wherein: the number of the film layer assemblies is four, and the four film layer assemblies are sequentially stacked.
7. A thin film device according to any one of claims 1 to 3, wherein: the thin film device is used for manufacturing an interlayer thin film device or a hollow thin film device.
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| CN111285619A (en) * | 2020-03-25 | 2020-06-16 | 四川猛犸半导体科技有限公司 | Thin film device |
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| CN111285619A (en) * | 2020-03-25 | 2020-06-16 | 四川猛犸半导体科技有限公司 | Thin film device |
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