CN111393037A

CN111393037A - Thin film device

Info

Publication number: CN111393037A
Application number: CN202010216022.7A
Authority: CN
Inventors: 不公告发明人
Original assignee: Sichuan Mammoth Semiconductor Technology Co ltd
Current assignee: Sichuan Mammoth Semiconductor Technology Co ltd
Priority date: 2020-03-25
Filing date: 2020-03-25
Publication date: 2020-07-10

Abstract

The invention discloses a thin film device which comprises a substrate, a film component, a top dielectric film layer and a protective film layer which are sequentially stacked, wherein the film component comprises a dielectric film layer, a silver film layer and a sacrificial film layer which are sequentially stacked outwards along the substrate, or the film component comprises a dielectric film layer, a sacrificial film layer and a silver film layer which are sequentially stacked outwards along the substrate, the film component also comprises an AgGa interface film layer, the AgGa interface film layer is arranged between the silver film layer and the sacrificial film layer and/or between the silver film layer and the dielectric film layer, and the number ratio of Ag to Ga atoms in the AgGa interface film layer is more than 1. The invention can improve the stability of the film system in high-temperature heat treatment, can also improve the chemical stability of the thin film device and improve the mechanical property of the thin film device, and has high visible light transmittance and low resistance.

Description

Thin film device

Technical Field

The invention belongs to the technical field of thin film devices, and particularly relates to a thin film device capable of performing high-temperature heat treatment.

Background

Ordinary glass does not have the function of thermal insulation, and along with the enhancement of energy-saving consciousness of people, coated glass (film devices) has been used in many buildings or automobiles at present, and the coated glass can play a good thermal insulation effect, so that the comfort level in the interior of the building or in the automobile is increased.

Solar cells are photovoltaic elements for generating electricity directly from sunlight. Due to the increasing demand for clean energy, the manufacture of solar cells has been greatly expanded in recent years and is also continuously expanding. Transparent conductive oxide films are widely used in solar cells due to their versatility as transparent coatings and electrodes. In many cases, lowering the resistance by increasing the dopant of the transparent conductive oxide film results in an undesirable lowering of transparency, while some properties of the transparent conductive oxide film are degraded after being subjected to a high-temperature heat treatment. In order to further reduce the resistance of the transparent conductive oxide film, a thicker film layer is required, which leads to a decrease in the transmittance of the film layer, an increase in the stress of the film layer, an increase in the instability of the film layer, and an increase in the manufacturing cost of the film layer.

Thin film devices used in the application fields of solar cells, buildings, automobiles and the like are required to be subjected to high-temperature heat treatment in the preparation process, so that the thin film devices are required to be capable of resisting the high-temperature heat treatment and simultaneously have high visible light transmittance, low resistance, good mechanical resistance, high stability and the like.

Disclosure of Invention

The present invention is directed to a thin film device to solve the above problems.

In order to achieve the purpose, the invention adopts the technical scheme that: the utility model provides a thin film device, includes base plate, membrane layer subassembly, top layer dielectric film layer and the protection rete that stacks gradually, the membrane layer subassembly includes along base plate outside dielectric film layer, silver-colored rete and the sacrificial film layer that stacks gradually, or the membrane layer subassembly includes along base plate outside dielectric film layer, sacrificial film layer and the silver-colored rete that stacks gradually, the membrane layer subassembly still includes AgGa interface film layer, AgGa interface film layer sets up between silver-colored rete and sacrificial film layer and/or between silver-colored rete and dielectric film layer, Ag is greater than 1 with Ga atomic number ratio in the AgGa interface film layer.

Further, the content of Ga in the AgGa interface film layer is less than 40 at%.

Furthermore, the content of Ga in the AgGa interface film layer is less than 30 at%.

Furthermore, the content of Ga in the AgGa interface film layer is less than 20 at%.

Further, the thickness of the AgGa interface film layer is 0.05-10nm, and preferably 1-8 nm.

Furthermore, the sacrificial film layer is made of NiCr, Ti or NiCrO_x、Cr、NiCrMo、CrO_x、MoO_x、TiMo、TiMoO_x、NiTi、TiO_xAnd NiTiO_xAny one of them or any combination thereof.

Furthermore, the thickness of the sacrificial film layer is 0.1-8nm, and the preferable thickness is 1-5 nm.

Furthermore, the number of the film layer assemblies is two, and the two film layer assemblies are sequentially stacked.

Furthermore, the number of the film layer assemblies is three, and the three film layer assemblies are sequentially stacked.

Furthermore, the number of the film layer assemblies is four, and the four film layer assemblies are sequentially stacked.

Furthermore, the dielectric film layer, the top dielectric film layer and the protective film layer are made of SnO_x、TiO_x、SiO_x、SiN_x、ZnO_x、AlZnO_x、Zn_xSn_yO_n、ZrO_x、Zn_xTi_yO_n、NbO_x、Ti_xNb_yO_n、SiNO_xAny one or any combination of ITO, AZO, IWO, BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide-based material and metal sulfide.

Further, the thickness of the dielectric film layer, the top dielectric film layer and the protective film layer is 1-100 nm.

Further, the substrate is a glass substrate, a polyimide substrate, or a substrate having a solar cell structure.

Further, the thin film device is used for manufacturing an interlayer thin film device or a hollow thin film device.

The invention has the beneficial technical effects that:

the AgGa interface film layer is arranged between the silver film layer and the sacrificial film layer and/or between the dielectric film layer and the silver film layer, so that the silver film layer can be protected from being bombarded by high-energy particles deposited on the subsequent film layer, the performance of the silver film layer is kept not to be reduced, the AgGa interface film layer can ensure that the silver film layer is bonded with the subsequent film layer more firmly, the atomic ratio of Ag to Ga in the interface film layer is more than 1, the AgGa interface film layer is easy to form, the quality of the interface film layer is prevented from being seriously reduced due to the aggregation of Ga atoms, the stability of a film system in high-temperature heat treatment is improved, and the chemical stability and the mechanical performance of a film device are improved. In addition, the invention also has high light transmittance and low resistance.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

FIG. 1 is a schematic structural diagram of a thin film device of the present invention;

FIG. 2 is a schematic structural diagram of another thin film device of the present invention;

FIG. 3 is a schematic structural view of a third thin film device of the present invention;

fig. 4 is a schematic structural view of a fourth thin-film device of the present invention.

Detailed Description

To further illustrate the various embodiments, the invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. Those skilled in the art will appreciate still other possible embodiments and advantages of the present invention with reference to these figures. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.

The invention will now be further described with reference to the accompanying drawings and detailed description.

It is to be noted that the tin oxide-based material in the present invention is a tin oxide-doped fluorine material, a tin oxide-doped iodine material, a tin oxide-doped antimony material, or any combination thereof; in the present invention, ITO refers to a material in which indium oxide is doped with tin, AZO refers to a material in which zinc oxide is doped with aluminum, IWO refers to a material in which indium oxide is doped with tungsten, BZO refers to a material in which zinc oxide is doped with boron, GZO refers to a material in which zinc oxide is doped with gallium, IZO refers to a material in which zinc oxide is doped with indium, IMO refers to a material in which indium oxide is doped with molybdenum, ICO refers to a material in which indium oxide is doped with cerium, ITIO refers to a material in which indium oxide is doped with titanium, and IGZO refers to a material in which zinc oxide is doped with indium gallium.

As shown in fig. 1, a thin film device includes a substrate 1, a film assembly, a top dielectric film 6 and a protective film 7, which are sequentially stacked, the film assembly includes a dielectric film 2, a silver film 3 and a sacrificial film 5, which are sequentially stacked along the substrate 1, the film assembly further includes an AgGa interface film 4, the AgGa interface film 4 is disposed between the silver film 3 and the sacrificial film 5, and the atomic number ratio of Ag to Ga in the AgGa interface film 4 is greater than 1.

Preferably, the content of Ga in the AgGa interface film layer 4 is less than 40 at%, which is beneficial to more uniform deposition of the AgGa interface film layer 4.

More preferably, the Ga content in the AgGa interface film layer 4 is less than 30 at%, which is beneficial to more uniform deposition of the AgGa interface film layer 4, and at the same time, the interface film layer can endure higher temperature.

More preferably, the content of Ga in the AgGa interface film layer 4 is less than 20 at%, which is beneficial for the AgGa interface film layer 4 to endure higher temperature, and meanwhile, the AgGa interface film layer is bonded with the silver film layer 3 and the subsequent film layers more firmly.

Preferably, the thickness of the AgGa interface film layer 4 is 0.05-10nm, more preferably 1-8nm, which is beneficial to enabling the light to penetrate and enabling the interface film layer to better block the bombardment of high-energy particles, better protecting the silver film layer 3 and enabling the bonding between the silver film layer 3 and the subsequent film layer to be firmer.

In particularThe sacrificial film layer 5 may be made of NiCr, Ti, NiCrO_x、Cr、NiCrMo、CrO_x、MoO_x、TiMo、TiMoO_x、NiTi、TiO_xAnd NiTiO_xAny one or any combination thereof; the dielectric film layer 2, the top dielectric film layer 6 and the protective film layer 7 can be made of SnO_x、TiO_x、SiO_x、SiN_x、ZnO_x、AlZnO_x、Zn_xSn_yO_n、ZrO_x、Zn_xTi_yO_n、NbO_x、Ti_xNb_yO_n、SiNO_xAny one or any combination of ITO, AZO, IWO, BZO, GZO, IZO, IMO, ICO, ITIO, IGZO, tin oxide-based material and metal sulfide; the substrate 1 is a glass substrate, a polyimide substrate, a substrate having a solar cell structure, or the like.

Preferably, the thickness of the sacrificial film 5 is 0.1-8nm, preferably 1-5nm, which is too thin, but the film thickness will seriously affect the light transmission effect and the bonding effect between the films.

Preferably, the dielectric layer 2, the top dielectric layer 6 and the protective layer 7 have a film thickness of 1 to 100nm, and if the film thickness is too thin, the film thickness does not have the desired effect, but if the film thickness is too thick, the film thickness seriously affects the light transmission effect and the adhesion effect between the films, and the manufacturing cost is increased.

Of course, in some embodiments, the AgGa interface film layer may also be disposed between the silver film layer and the dielectric film layer, or the AgGa interface film layer may be disposed between both the silver film layer and the sacrificial film layer and the silver film layer and the dielectric film layer.

In some embodiments, the sacrificial film layer in the film layer assembly may also be disposed between the dielectric film layer and the silver film layer, that is, the film layer assembly includes the dielectric film layer, the sacrificial film layer and the silver film layer which are sequentially stacked along the substrate.

Alternatively, a sacrificial film may be deposited prior to depositing the silver film 3.

Fig. 2 shows another structure of the thin-film device of the present invention, which is different from the thin-film device shown in fig. 1 in that: the number of the film layer components is two, the two film layer components are sequentially stacked, and the specific structure of the film layer components comprises a substrate 1, a first dielectric film layer 2, a first silver film layer 3, a first AgGa interface film layer 4, a first sacrificial film layer 5, a second dielectric film layer 21, a second silver film layer 31, a second AgGa interface film layer 41, a second sacrificial film layer 51, a top dielectric film layer 6 and a protection film layer 7 which are sequentially stacked. The sheet resistance of the thin film device of fig. 2 is lower relative to the thin film device of fig. 1.

Fig. 3 shows another structure of the thin-film device of the present invention, which is different from the thin-film device shown in fig. 2 in that: the number of the film layer assemblies is three, the three film layer assemblies are sequentially stacked, and the specific structure of the three film layer assemblies comprises a substrate 1, a first dielectric film layer 2, a first silver film layer 3, a first AgGa interface film layer 4, a first sacrificial film layer 5, a second dielectric film layer 21, a second silver film layer 31, a second AgGa interface film layer 41, a second sacrificial film layer 51, a third dielectric film layer 22, a third silver film layer 32, a third AgGa interface film layer 42, a third sacrificial film layer 52, a top dielectric film layer 6 and a protective film layer 7 which are sequentially stacked. The sheet resistance of the thin film device of fig. 3 is lower relative to the thin film device of fig. 2.

Fig. 4 shows another structure of the thin-film device of the present invention, which is different from the thin-film device shown in fig. 3 in that: the number of the film layer assemblies is four, the four film layer assemblies are sequentially stacked, and the specific structure of the film layer assembly comprises a substrate 1, a first dielectric film layer 2, a first silver film layer 3, a first AgGa interface film layer 4, a first sacrificial film layer 5, a second dielectric film layer 21, a second silver film layer 31, a second AgGa interface film layer 41, a second sacrificial film layer 51, a third dielectric film layer 22, a third silver film layer 32, a third AgGa interface film layer 42, a third sacrificial film layer 52, a fourth dielectric film layer 23, a fourth silver film layer 33, a fourth AgGa interface film layer 43, a fourth sacrificial film layer 53, a top dielectric film layer 6 and a protective film layer 7 which are sequentially stacked. The sheet resistance of the thin film device of fig. 4 is lower relative to the thin film device of fig. 3.

The thin film device of the present invention will be described below by way of several specific examples. In each of the following examples and comparative examples, each film layer was sequentially coated on the air surface of a clean, 2.0mm thick, clear float glass base sheet (designated as glass substrate 2.0C).

After the single glass substrate is subjected to high-temperature coating heat treatment, the outermost coating layer of the coated glass substrate is an outermost protective film layer, and the outermost protective film layer is outwards laminated with PVB with the thickness of 0.76mm and the other transparent float glass substrate without a coating with the thickness of 2.0mm in sequence to form the coated laminated glass. The formed coated laminated glass needs to pass a knocking experiment, one of the most important physical property tests, and the experiment is a detection method for measuring the adhesive property between a film layer and PVB and glass. The company Solutia europe.a. classified the laminated glass strike standard into grade 9. The standard grades were specified as 1 st to 9 th grades, depending on the amount of cullet sticking to the PVB after striking from a few to many. The required knocking grades of the laminated glass meeting the requirements of national standard GB9656-2003 are as follows: the knocking grade is not less than 3 grade and not more than 6 grade.

The knocking experiment steps are as follows:

a. cutting two test pieces of 100 × 300mm from the whole coated laminated glass, b, placing the two samples at-18 +/-2 deg.C for at least 2 hr, c, taking out the samples from the low-temp. place, placing them in a sample box for 1-2 min, knocking them by an iron hammer, d, allowing the samples to return to room temp. and comparing them with standard sample piece, e, comparing the samples with the standard sample piece, and judging the grade of knocking test.

Example 1

ZnSnO with a thickness of 32nm was sequentially plated on the glass substrate 2.0C (substrate 1)₂A film layer; ZnO with thickness of 10nm₂The film layer serves as a dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; an AgGa interface film layer 4 with the thickness of 0.05nm, wherein the content of Ga is 40 at%; a Ti film layer (sacrificial film layer 5) with the thickness of 3 nm; ZnSnO with thickness of 23nm₂A film layer (top dielectric film layer 6); si with a thickness of 17nm₃N₄The film layer is used as a protective film layer 7, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure of the heat-treatable coated glass is shown in figure 1.

And (3) testing optical performance:

before heat treatment, the visible light transmittance of the single piece of coated glass is 80.5 percent; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 82.8 percent and the square resistance is 5.6 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 76.4 percent through detection.

And (3) testing physical properties:

according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 4 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.

Example 2

ZnSnO with a thickness of 32nm was sequentially plated on the glass substrate 2.0C (substrate 1)₂A film layer; ZnO with thickness of 10nm₂The film layer serves as a dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; an AgGa interface film layer 4 with the thickness of 0.05nm, wherein the content of Ga is 20 at%; a Ti film layer (sacrificial film layer 5) with the thickness of 3 nm; ZnSnO with thickness of 23nm₂A film layer (top dielectric film layer 6); si with a thickness of 17nm₃N₄The film layer is used as a protective film layer 7, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure of the heat-treatable coated glass is shown in figure 1.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 81.1% before the heat treatment; after heat treatment at 580 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 83.4 percent and the square resistance is 5.1 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 76.9 percent through detection.

And (3) testing physical properties:

according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 5 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.

Example 3

ZnSnO with the thickness of 35nm is sequentially plated on a glass substrate 2.0C (substrate)_1.8A film layer (dielectric film layer); an AgGa interface film layer with the thickness of 1nm, wherein the content of Ga is 10 at%; a silver film layer with the thickness of 8 nm; an AgGa interface film layer with the thickness of 10nm, wherein the content of Ga is 30 at%; a NiTi film layer (sacrificial film layer) with the thickness of 0.1 nm; ZnSnO with thickness of 77nm_1.8A film layer (dielectric film layer); a silver film layer with the thickness of 11 nm; an AgGa interface film layer with the thickness of 2nm, wherein the content of Ga is 30 at%; a NiTi film layer (sacrificial film layer) with the thickness of 3 nm; ZnSnO with thickness of 28nm_1.8A film layer (top dielectric film layer); TiO with thickness of 8nm₂The film layer is used as a protective film layer to obtain the heat-treatable coated glass, namely the film device.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 78.6 percent before heat treatment; after heat treatment at 585 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 80.6 percent, and the square resistance is 3.5 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 75.1 percent through detection.

And (3) testing physical properties:

Example 4

Si with a thickness of 15nm was sequentially plated on a glass substrate 2.0C (substrate 1)₃N₄A film layer; ZnSnO with thickness of 18nm_2.3The film layer serves as a first dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; an AgGa interface film layer 4 with the thickness of 1nm, wherein the content of Ga is 10 at%; a TiMo film layer (first sacrificial film layer 5) having a thickness of 2 nm; ZnSnO with thickness of 73nm_2.3A film layer (second dielectric film layer 21); a silver film layer 31 with a thickness of 10 nm; an AgGa interface film layer 41 with the thickness of 1nm, wherein the content of Ga is 20 at%; a NiCr film layer (second sacrificial film layer 51) having a thickness of 1 nm; ZnSnO with thickness of 68nm_2.3A film layer (third dielectric film layer 22); a silver film layer 32 with a thickness of 9 nm; an AgGa interface film layer 42 with the thickness of 0.05nm, wherein the content of Ga is 30 at%; NiT with thickness of 8nmi film layer (third sacrificial film layer 52); AlZnO with thickness of 20nm₂A film layer (top dielectric film layer 6); ZrO of thickness 15nm₂The film layer is used as a protective film layer 7, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure is shown in figure 3.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 77.1% before the heat treatment; after heat treatment at 590 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 79.3 percent, and the square resistance is 2.1 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 70.5 percent through detection.

And (3) testing physical properties:

according to GB9656-2003, the requirements can be met by an impact test, an irradiation resistance test, a damp-heat cycle test and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.

Example 5

Sequentially plating a CdS film layer with the thickness of 10nm on a glass substrate 2.0C (a substrate 1); si with a thickness of 15nm₃N₄A film layer; a ZnO film layer with the thickness of 8nm is used as a first dielectric film layer 2; a silver film layer 3 with the thickness of 12 nm; an AgGa interface film layer 4 with the thickness of 2nm, wherein the content of Ga is 10 at%; a TiMo film layer (first sacrificial film layer 5) having a thickness of 2 nm; ZnSnO with thickness of 65nm_2.3A film layer; a ZnO film layer (second dielectric film layer 21) having a thickness of 8 nm; a silver film layer 31 with a thickness of 10 nm; an AgGa interface film layer 41 with the thickness of 1nm, wherein the content of Ga is 20 at%; a NiCr film layer (second sacrificial film layer 51) having a thickness of 2 nm; ZnSnO with thickness of 68nm_2.3A film layer (third dielectric film layer 22); a silver film layer 32 with a thickness of 8 nm; an AgGa interface film layer 42 with the thickness of 0.1nm, wherein the content of Ga is 20 at%; a NiTi film layer (third sacrificial film layer 52) having a thickness of 3 nm; AlZnO with thickness of 70nm₂A film layer; a ZnO film layer (fourth dielectric film layer 23) having a thickness of 8 nm; a silver film layer 33 with a thickness of 6 nm; an AgGa interface film layer 43 with the thickness of 2nm, wherein the content of Ga is 20 at%; a NiCr film layer (fourth sacrificial film layer 53) having a thickness of 2 nm; AlZnO with thickness of 25nm₂Film layer (Top dielectric film layer)6) (ii) a ZrO of thickness 15nm₂The film layer is used as a protective film layer 7, and the heat-treatable coated glass, namely a thin-film device, is obtained, and the structure of the heat-treatable coated glass is shown in figure 4.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 74.1 percent before heat treatment; after heat treatment at 590 ℃ for 10min, detection shows that the visible light transmittance of the single piece of coated glass is 75.8 percent, and the square resistance is 1.1 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 68.5 percent through detection.

And (3) testing physical properties:

Example 6

ZnSnO with the thickness of 35nm is plated on the glass substrate 2.0C in sequence_1.8A film layer; an Ag film layer with the thickness of 8 nm; a NiTi film layer with the thickness of 0.1 nm; ZnSnO with thickness of 77nm_1.8A film layer; an Ag film layer with the thickness of 11 nm; a NiTi film layer with the thickness of 3 nm; ZnSnO with thickness of 28nm_1.8A film layer; TiO with thickness of 8nm₂The film layer is used as a protective film layer to obtain the heat-treatable coated glass, namely the film device.

And (3) testing optical performance:

the visible light transmittance of the single piece of coated glass is 77.1% before the heat treatment; after heat treatment at 585 ℃ for 10min, detecting that the visible light transmittance of the single piece of coated glass is 79.4 percent, and the square resistance is 4.5 omega/□; then the film-coated laminated glass obtained after the working procedures of washing, laminating and the like has the visible light transmittance of 73.1 percent through detection.

And (3) testing physical properties:

Example 7

The coated glass obtained in example 3 was subjected to a high-temperature heat treatment to be retained in a furnace at 620 ℃ for 13 minutes, and then the sheet resistance of the single piece of coated glass was measured to be 5.3. omega./□.

The coated laminated glass obtained by the procedures of laminating the single piece of film glass and the like can meet the requirements according to GB9656-2003, an impact experiment, an irradiation resistance experiment, a damp-heat cycle experiment and the like. Through detection, the knocking experiment grade is 3 grade, which shows that the adhesive force of the film layer, the glass and the PVB is good.

Example 8

The coated glass obtained in example 6 was subjected to a high-temperature heat treatment, and was allowed to stand in a heating furnace at 620 ℃ for 13 minutes, and then a sheet resistance of a single piece of the coated glass was measured to be 22.8. omega./□.

The coated laminated glass obtained by the single piece of coated glass through the working procedures of laminating and the like can not meet the requirements according to GB9656-2003, an impact experiment, an irradiation resistance experiment, a damp-heat cycle experiment and the like. Through detection, the knocking experiment grade is 2 grade, which shows that the adhesive force between the film layer and the glass and PVB is poor.

A comparison of example 7 with example 8 shows that: the sheet resistance of example 7 is not much different from that of example 3, while the sheet resistance of example 8 is much higher than that of example 6, indicating that the silver film layer is damaged to some extent after the high temperature heat treatment of example 8; on the other hand, the AgGa interface film layer is arranged between the silver film layer and the sacrificial film layer and/or between the dielectric film layer and the silver film layer, the atomic ratio of Ag to Ga in the interface film layer is more than 1, and the high temperature resistance, the mechanical resistance and the chemical stability of the whole film system structure can be improved.

The thin film device of the invention can be used for manufacturing an interlayer thin film device or a hollow thin film device.

While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. The utility model provides a thin film device, includes base plate, membrane layer subassembly, top layer dielectric film layer and the protection film layer that stacks gradually, the membrane layer subassembly includes along outside dielectric film layer, silver-colored rete and the sacrificial film layer that stacks gradually of base plate, or the membrane layer subassembly includes along outside dielectric film layer, sacrificial film layer and the silver-colored rete that stacks gradually of base plate, its characterized in that: the film component further comprises an AgGa interface film layer, wherein the AgGa interface film layer is arranged between the silver film layer and the sacrificial film layer and/or between the silver film layer and the dielectric film layer, and the number ratio of Ag to Ga atoms in the AgGa interface film layer is larger than 1.

2. The thin film device of claim 1, wherein: the content of Ga in the AgGa interface film layer is less than 40 at%.

3. The thin film device of claim 2, wherein: the content of Ga in the AgGa interface film layer is less than 30 at%.

4. The thin film device of claim 1, wherein: the thickness of the AgGa interface film layer is 0.05-10 nm.

5. The thin film device of claim 1, wherein: the sacrificial film layer is made of NiCr, Ti or NiCrO_x、Cr、NiCrMo、CrO_x、MoO_x、TiMo、TiMoO_x、NiTi、TiO_xAnd NiTiO_xAny one of them or any combination thereof.

6. The thin film device of claim 1, wherein: the thickness of the sacrificial film layer is 0.1-8 nm.

7. The thin film device of any of claims 1-6, wherein: the number of the film layer assemblies is two, and the two film layer assemblies are sequentially stacked.

8. The thin film device of any of claims 1-6, wherein: the number of the film layer assemblies is three, and the three film layer assemblies are sequentially stacked.

9. The thin film device of any of claims 1-6, wherein: the number of the film layer assemblies is four, and the four film layer assemblies are sequentially stacked.

10. The thin film device of any of claims 1-6, wherein: the thin film device is used for manufacturing an interlayer thin film device or a hollow thin film device.