CN212582033U - Bearing device for straight pulling single crystal quartz crucible - Google Patents
Bearing device for straight pulling single crystal quartz crucible Download PDFInfo
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- CN212582033U CN212582033U CN202020264983.0U CN202020264983U CN212582033U CN 212582033 U CN212582033 U CN 212582033U CN 202020264983 U CN202020264983 U CN 202020264983U CN 212582033 U CN212582033 U CN 212582033U
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Abstract
The utility model provides a czochralski single crystal quartz crucible is with bearing device, including supporting the crucible support the crucible with be equipped with the interlayer between the quartz crucible, the interlayer is around locating quartz crucible outer wall is followed quartz crucible length direction sets up. The bearing device provided by the utility model has simple structure, easy fixation and high operability, can effectively reduce the carbon content of the silicon single crystal and improve the quality of the single crystal; meanwhile, the service life of the carbon/carbon composite material crucible or the graphite crucible and the quartz crucible can be prolonged, the production cost is reduced, and the universality is wide.
Description
Technical Field
The utility model belongs to the technical field of auxiliary assembly for czochralski single crystal growing furnace, especially, relate to a czochralski single crystal quartz crucible is with bearing device.
Background
The Czochralski method for producing single crystal silicon is the most important method for preparing the single crystal silicon at present, a thermal field system is one of the most important conditions for crystallizing silicon materials, the temperature gradient distribution of a thermal field directly influences whether the single crystal can be smoothly pulled out and the quality of the single crystal is controlled, and a carbon/carbon composite material crucible or a graphite crucible for bearing silicon melt raw materials and a quartz crucible is a key core component in the thermal field system. The carbon/carbon composite material crucible or the graphite crucible is mainly used for bearing a quartz crucible filled with a silicon melt raw material at a high temperature, not only needs to bear the weight of the quartz crucible and the silicon melt raw material, but also needs to ensure that the silicon melt does not leak out after the high-temperature quartz crucible is softened, and needs to bear the silicon melt to rotate in the crystal pulling process. The melting temperature of the polycrystalline silicon raw material is about 1600 ℃, under the high temperature condition, a carbon/carbon composite material crucible or a graphite crucible is directly contacted with a quartz crucible to perform chemical reaction, gases such as carbon monoxide or carbon dioxide are generated, and then the gases enter molten silicon liquid, so that the carbon content of the finally prepared silicon single crystal is increased, and the performance is reduced, for example: one of the chemical reactions 2C + SiO that may be present2Si +2 CO. At the same time, with a long timeWhen the carbon/carbon composite material crucible or the graphite crucible is used, one side of the carbon/carbon composite material crucible or the graphite crucible, which is in contact with the quartz crucible, is gradually melted to remove a layer of film, so that the service life of the carbon/carbon composite material crucible or the graphite crucible is reduced, and the production cost is increased. Therefore, how to solve the technical problem of chemical reaction of the carbon/carbon composite material crucible or the graphite crucible and the quartz crucible in the using process, and simultaneously, the key for processing the silicon single crystal rod with high quality and low cost is to improve the quality of the single crystal and prolong the service life of the carbon/carbon composite material crucible or the graphite crucible.
SUMMERY OF THE UTILITY MODEL
The utility model provides a bearing device for a czochralski single crystal quartz crucible, which solves the technical problem that a carbon/carbon composite material crucible or a graphite crucible and the quartz crucible in the prior art have chemical reaction in the use process, and the bearing device provided by the utility model has simple structure, easy fixation and high operability, can effectively reduce the carbon content of silicon single crystal and improve the quality of the single crystal; meanwhile, the service life of the carbon/carbon composite material crucible or the graphite crucible and the quartz crucible can be prolonged, the production cost is reduced, and the universality is wide.
In order to solve the technical problem, the utility model discloses a technical scheme is:
the bearing device for the czochralski single crystal quartz crucible comprises a supporting crucible, wherein an interlayer is arranged between the supporting crucible and the quartz crucible, and the interlayer is wound on the outer wall of the quartz crucible and arranged along the length direction of the quartz crucible.
Furthermore, the interlayer is of a cylindrical structure and is embedded inside the support crucible.
Further, the supporting crucible comprises an upper straight line section and a bottom bent section, and the height of the isolation layer is not more than that of the straight line section.
Further, the height of the interlayer is the same as that of the straight line segment.
Furthermore, the support crucible is in the straightway is inboard to be equipped with the ladder groove from the last port downwards along its direction of height, the ladder groove with interlayer looks adaptation.
Furthermore, the separation layer is arranged on the same plane with the inner wall of the supporting crucible.
Furthermore, the interlayer is of an integrated crucible structure, is arranged on the inner side of the support crucible and is matched with the outer wall of the quartz crucible.
Furthermore, the upper end face of the interlayer is also provided with a plurality of hooks or curled edges which extend outwards, and the hooks or the curled edges are matched with the upper edge end face of the supporting crucible.
Furthermore, the wall thickness of the interlayer is the same, and the thickness of the interlayer is 0.5-2 mm.
Further, the support crucible is a carbon/carbon composite material crucible or a graphite crucible; the interlayer is a molybdenum alloy interlayer.
Compared with the prior art, the utility model discloses a bear device is equipped with the very thin molybdenum alloy interlayer of one deck between the support crucible and the quartz crucible of making by carbon/carbon combined material or graphite material, for example molybdenum disilicide, the interlayer of molybdenum alloy is high temperature resistant and still has lower coefficient of thermal expansion, high temperature oxidation resistance, can effectively prevent to support crucible and quartz crucible direct contact and produce gases such as carbon monoxide or carbon dioxide, furthest reduces the carbon content who contains in the silicon single crystal of pulling out, and make the carbon content in the silicon single crystal reduce about 0.2-0.5ppm, single crystal quality has been improved. The arrangement of the molybdenum alloy interlayer can reduce the corrosion of the inner side wall of the supporting crucible, the supporting strength of the supporting crucible is enhanced, the service life of the supporting crucible can be further prolonged, and the production cost is reduced. Due to the arrangement of the interlayer, the joint strength of the quartz crucible and the supporting crucible is weakened, so that the quartz crucible is easier to demould when being dismantled and cleaned, the furnace dismantling time is saved, and the working efficiency is improved.
In the utility model, the molybdenum alloy interlayer is of a cylindrical structure or an integrated crucible structure, has simple structure and easy processing, and can also be provided with a hook on the upper end surface of the molybdenum alloy interlayer so that the interlayer is arranged close to the supporting crucible to strengthen the fixed placement of the interlayer; the interlayer is respectively detachably arranged with the supporting crucible and the quartz crucible, so that the crucible can be conveniently disassembled and assembled and can be fully used for many times.
Drawings
Fig. 1 is a schematic structural diagram of a carrying device according to a first embodiment of the present invention;
FIG. 2 is a schematic structural view of a supporting crucible according to a first embodiment of the present invention;
fig. 3 is a schematic structural diagram of a barrier layer according to a first embodiment of the present invention;
FIG. 4 is a top view of the engagement of a barrier layer with hooks with a supporting crucible according to a first embodiment of the present invention;
FIG. 5 is a cross-sectional view of a barrier with a rolled edge in cooperation with a supporting crucible according to a first embodiment of the present invention;
fig. 6 is a schematic structural diagram of a bearing device according to a second embodiment of the present invention;
fig. 7 is a schematic structural view of a barrier layer according to a second embodiment of the present invention.
In the figure:
10. a support crucible 11, a straight section 12 and a bent section
13. Stepped groove 20, quartz crucible 30 and interlayer
31. Hook 32, turned edge
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The first embodiment is as follows:
the present embodiment proposes a carrier for a czochralski single crystal quartz crucible, as shown in fig. 1, comprising a support crucible 10 made of carbon/carbon composite or graphite, a thin molybdenum alloy barrier layer 30 disposed between the support crucible 10 and the quartz crucible 20, the barrier layer 30 being completely wound around the outer wall of the quartz crucible 20 and disposed along the length direction of the quartz crucible 20.
In the present embodiment, the partition layer 30 is a cylindrical structure, and due to the limitation of the shape and structure of the quartz crucible 20, the wall surfaces of other structures cannot be matched with the outer wall of the quartz crucible 20, so the inner and outer walls of the partition layer 30 are both smooth planes, and the wall thickness of the partition layer 30 is the same. The interlayer 30 is embedded inside the support crucible 10, the interlayer 30 is detachably matched with the support crucible 10 and the quartz crucible 20 which are made of carbon/carbon composite materials or graphite materials, and the interlayer 30 is tightly attached to the support crucible 10 and is in seamless fit with the support crucible 10.
Specifically, as shown in fig. 2, the support crucible 10 is made of a conventional carbon/carbon composite material or graphite material, the support crucible 10 includes an upper straight section 11 and a bottom curved section 12, the straight section 11 and the curved section 12 are integrally connected, and the wall thickness of the straight section 11 is uniform and consistent, and the support crucible is of a straight cylinder structure; the wall thickness of the bending section 12 is slightly larger, and the bending section is of a bowl bottom structure. The support crucible 11 is provided with a stepped groove 13 downward from an upper port along the height direction of the inner side of the straight line section 11, and the stepped groove 13 is a right-angled circular groove. The vertical ring surface of the stepped groove 13 is perpendicular to the horizontal ring surface, and the vertical height is greater than the horizontal depth.
The interlayer 30 is embedded and fixedly arranged on the stepped groove 13, and the wall thickness and the size of the interlayer 30 are matched with those of the stepped groove 13. The interlayer 30 and the stepped groove 13 are closely attached, the inner wall surface of the interlayer 30 and the inner wall of the supporting crucible 10 are in the same plane, and the lower end surface of the interlayer 30 is in seamless fit with the lower bottom surface of the stepped groove 10. That is to say, the placed separation layer 30 and the support crucible 10 can form an integral bearing device with a just like integral structure, the connection between the inner walls of the support crucible 10 and the separation layer 30 is smooth and has good continuity, which not only can ensure the placing stability of the quartz crucible 20, but also can stably support the quartz crucible 20 and the silicon melt raw material placed therein, thereby enhancing the placing safety of the quartz crucible 20.
As shown in fig. 3, the barrier layer 30 is a straight-tube structure, and the barrier layer 30 is a very thin molybdenum alloy layer, such as molybdenum disilicide, which is not only resistant to high temperature but also has a low coefficient of thermal expansion and high-temperature oxidation resistance, and can effectively prevent the carbon/carbon composite or graphite support crucible 10 from directly contacting the quartz crucible 20 to generate gases such as carbon monoxide or carbon dioxide, thereby reducing the carbon content in the pulled silicon single crystal to the maximum and reducing the carbon content in the silicon single crystal. In this embodiment, the wall thickness of the barrier layer 30 is 0.5 to 2mm, the wall thickness of the straight section of the support crucible 10 is typically 15 to 22mm, and the wall thickness of the barrier layer 30 is 3 to 15% of the wall thickness of the support crucible 10. This is because if the wall thickness of the partition layer 30 is greater than 2mm, not only the manufacturing cost of the partition layer 30 is increased, but also the wall thickness of the middle upper section of the support crucible 10 is too thin, which affects the support deformation of the quartz crucible 30, because the quartz crucible 20 expands with heat and contracts with cold after being cooled at a high temperature, the quartz crucible 20 expands with heat, which causes the support crucible 10 and the partition layer 30 to deform simultaneously, and the too thick partition layer 30 weakens the deformation resistance of the support crucible 10 as a whole. If the wall thickness of the partition layer 30 is less than 0.5mm, the fixing difficulty is increased, and if the partition layer is too thin, the partition layer cannot be fixed and the manufacturing difficulty is high, and meanwhile, the support crucible 10 made of carbon/carbon composite material or graphite material cannot be effectively prevented from being in direct contact with the quartz crucible 20 to generate gases such as carbon monoxide or carbon dioxide. Therefore, the wall thickness of the barrier layer 30 is preferably 0.5-2 mm.
The height of the barrier layer 30 is not greater than the height of the straight section 11, and preferably the height of the barrier layer 30 is the same as the height of the straight section 11, i.e. the barrier layer 30 completely separates the straight section supporting the crucible 10 from the quartz crucible 20. In the process of pulling the single crystal, the silicon melt in the straight cylinder part of the quartz crucible 20 is a main supply area of raw materials required by pulling the single crystal, the heater provides heat for the quartz crucible 20, the heating temperature of the vertical part in the quartz crucible 20 is far higher than the heating temperature of the bottom of the curved part in the quartz crucible 20, so that the quartz crucible 20 is easy to directly contact with the straight line part 11 in the supporting crucible 10 in the vertical part to generate chemical reaction, gases such as carbon monoxide or carbon dioxide are generated, part of the gases are discharged along with nitrogen, and part of the gases are directly introduced into molten silicon liquid along with hot gas flow, so that the carbon content of the finally prepared silicon single crystal is increased, and the performance is reduced. The presence of the molybdenum alloy barrier layer 30 prevents such chemical reactions, such as molybdenum disilicide, which has a high melting point and is not easily melted; the thermal expansion coefficient is high, and the deformation resistance is strong; has good electrical conductivity, good heat conductivity, good high-temperature oxidation resistance and high strength, is not easy to deform, and is not easy to directly react with silicon dioxide in the quartz crucible 30. Therefore, the molybdenum alloy interlayer 30 with the same length as the straight line segment 11 of the supporting crucible 10 can effectively reduce the generation of gases such as carbon monoxide or carbon dioxide, and the like, thereby reducing the probability of the gases entering molten silicon, and finally reducing the carbon content in the czochralski silicon.
Meanwhile, the molybdenum alloy interlayer 30 can reduce the corrosion of the inner side wall of the support crucible 10, namely, one side of the support crucible 10, which is in contact with the quartz crucible 20, is prevented from being melted to remove a layer of film, so that the service life of the support crucible can be further prolonged, and the production cost is reduced.
In addition, because the molybdenum alloy has very strong hardness, the interlayer 30 can further enhance the supporting strength of the supporting crucible 10, the straight-tube-shaped interlayer 30 has simple structure and is easier to process, and the interlayer 30 of the quartz crucible 20 with the same model can be repeatedly used for many times, thereby improving the utilization rate of auxiliary materials. Due to the existence of the interlayer 30, the bonding strength between the quartz crucible 20 and the support crucible 10 is weakened in the crystal pulling process, so that the quartz crucible 20 is easier to demold when being disassembled and cleaned, the interlayer 30 can be directly taken out after the quartz crucible 20 is demolded, the taken-out interlayer 30 can be used for the next time, and the furnace disassembling time is also saved. The arrangement of the partition layer 30 can improve the bearing strength of the support crucible 10, prolong the service time of the support crucible 10, reduce the working strength of disassembly and cleaning and improve the working efficiency.
Further, in order to improve the stability of the installation of the interlayer 30, a hook 31 can be further arranged on the upper end face of the molybdenum alloy interlayer 30, the hook 31 and the body of the interlayer 30 are integrally processed, and the size of the hook 31 is matched with the end face of the outer wall of the upper end face of the support crucible 10. The number of hooks 31 is not limited but needs to be uniformly arranged along the periphery of the upper end face of the barrier layer 30 so that the barrier layer 30 is closely hung against the support crucible 10 and the quartz crucible 20 can be stably placed between the support crucible 10 and the quartz crucible 20. Due to the space limitation of the fit of the quartz crucible 20 and the support crucible 10, the hook 31 can be simply arranged by a bending piece, so that the safety and convenience are realized, the thickness of the hook 31 is consistent with that of the interlayer 30 body, the arrangement structure of the hook 31 comprises but is not limited to the top view shown in fig. 4, the interlayer 30 provided with the hook 31 is more convenient to assemble and disassemble, and the reliability of the installation of the interlayer 30 can also be improved.
Of course, a circle of integrally arranged curling edge 32 can also be arranged on the upper end surface of the separation layer 30, the thickness of the curling edge 32 is the same as that of the separation layer 30, the structure of the curling edge 30 is fixedly sleeved on the circumference of the upper end surface of the supporting crucible 10, and the structure is matched with the top wall thickness of the supporting crucible 10, and the structure is shown in fig. 5.
Example two:
as shown in fig. 6 to 7, the greatest difference between the first embodiment and the second embodiment is that the crucible has an integrated structure of the barrier layer 30, that is, the structure of the support crucible 10 made of carbon/carbon composite material or graphite material is unchanged as the conventional structure, and only the crucible having the barrier layer 30 of molybdenum alloy disposed between the support crucible 10 and the quartz crucible 20. The thickness of the interlayer 30 is uniform and is 0.5-2mm, the inner side wall of the interlayer 30 is matched with the outer side wall of the quartz crucible 20, and the outer side wall of the interlayer 30 is matched with the inner side wall of the support crucible 10. The structure separates the quartz crucible 20 from the supporting crucible 10 completely, which can prevent the supporting crucible 10 and the quartz crucible 20 from generating gases such as carbon monoxide or carbon dioxide by chemical reaction completely, reduce the generation of gases such as carbon monoxide or carbon dioxide to the utmost extent, reduce the probability of the gases entering into molten silicon liquid, and finally reduce the carbon content in the pulled monocrystalline silicon, compared with the prior art, the content of the carbon in the obtained czochralski silicon is reduced by nearly 0.2-0.5ppm, the quality of the monocrystalline silicon is ensured, and the performance of the monocrystalline silicon rod is further improved. Meanwhile, the molybdenum alloy interlayer 30 crucible with the integrated structure ensures that the support crucible 10 is more comprehensively protected, can prevent the inner side wall of the support crucible 10 from being corroded to the maximum extent, and further prolongs the service life of the support crucible 10.
Of course, in this embodiment, several hooks 31 or beads 32 extending outward may be further disposed on the upper end surface of the barrier layer 30, and the drawings are omitted, and the structure of the hooks 31 or beads 32 is the same as that of the barrier layer 30 in this embodiment, and will not be described in detail here.
1. The utility model discloses a bear device is equipped with the very thin molybdenum alloy interlayer of one deck between the support crucible of making by carbon/carbon combined material or graphite material and quartz crucible, like molybdenum disilicide, the interlayer of molybdenum alloy is high temperature resistant and still has lower coefficient of thermal expansion, high temperature oxidation resistance, can effectively prevent carbon/carbon combined material crucible or graphite crucible and quartz crucible direct contact and produce gases such as carbon monoxide or carbon dioxide, furthest reduces the carbon content who contains in the silicon single crystal of pulling out, and make the carbon content in the silicon single crystal reduce about 0.2-0.5ppm, the single crystal quality has been improved.
2. The molybdenum alloy interlayer is of a cylindrical structure or an integrated crucible structure, is simple in structure and easy to process, and a hook can be arranged on the upper end surface of the molybdenum alloy interlayer so that the interlayer is arranged to be close to and support the crucible to strengthen the fixed placement of the interlayer; the interlayer is respectively detachably arranged with the supporting crucible and the quartz crucible, so that the crucible can be conveniently disassembled and assembled and can be fully used for many times.
3. The arrangement of the molybdenum alloy interlayer can reduce the corrosion of the inner side wall of the supporting crucible, the supporting strength of the supporting crucible is enhanced, the service life of the supporting crucible can be further prolonged, and the production cost is reduced. Due to the arrangement of the interlayer, the joint strength of the quartz crucible and the supporting crucible is weakened, so that the quartz crucible is easier to demould when being dismantled and cleaned, the furnace dismantling time is saved, and the working efficiency is improved.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention, and should not be construed as limiting the scope of the present invention. All the equivalent changes and improvements made according to the application scope of the present invention should still fall within the patent coverage of the present invention.
Claims (9)
1. The bearing device for the czochralski single crystal quartz crucible is characterized by comprising a supporting crucible, wherein an interlayer is arranged between the supporting crucible and the quartz crucible, and the interlayer is wound on the outer wall of the quartz crucible and arranged along the length direction of the quartz crucible; the support crucible is a carbon/carbon composite material crucible or a graphite crucible; the interlayer is a molybdenum alloy interlayer.
2. The carrier according to claim 1, wherein the barrier is cylindrical and is disposed inside the support crucible.
3. The carrier as set forth in claim 2, wherein the support crucible comprises an upper straight section and a bottom curved section, and the height of the barrier layer is not greater than the height of the straight section.
4. The carrier as claimed in claim 3, wherein the height of the barrier layer is the same as the height of the straight line section.
5. The carrying device for the Czochralski single crystal quartz crucible as claimed in claim 3 or 4, wherein the supporting crucible is provided with a stepped groove at the inner side of the straight section along the height direction thereof from the upper port, and the stepped groove is matched with the partition layer.
6. The carrier for a Czochralski single crystal quartz crucible as claimed in claim 5, wherein the spacer means is disposed in a coplanar manner with the inner wall of the support crucible.
7. The carrier as claimed in claim 1, wherein the partition wall is of a one-piece crucible structure, is disposed inside the support crucible and is adapted to the outer wall of the quartz crucible.
8. The carrying device for the Czochralski single crystal quartz crucible as claimed in any of claims 1 to 4 and 6 to 7, wherein hooks or beads extending outwards are further provided on the upper end face of the partition layer, and the hooks or beads are adapted to the upper end face of the supporting crucible.
9. The carrier according to claim 8, wherein the walls of the spacers have the same thickness, and the thickness is 0.5 to 2 mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020264983.0U CN212582033U (en) | 2020-03-06 | 2020-03-06 | Bearing device for straight pulling single crystal quartz crucible |
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| CN202020264983.0U CN212582033U (en) | 2020-03-06 | 2020-03-06 | Bearing device for straight pulling single crystal quartz crucible |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113370591A (en) * | 2021-07-12 | 2021-09-10 | 成都东骏激光股份有限公司 | High-temperature volatilization inhibition device and method and application of device |
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2020
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113370591A (en) * | 2021-07-12 | 2021-09-10 | 成都东骏激光股份有限公司 | High-temperature volatilization inhibition device and method and application of device |
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