CN109868503A - A kind of crucible assembly and long crystal furnace - Google Patents
A kind of crucible assembly and long crystal furnace Download PDFInfo
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- CN109868503A CN109868503A CN201910208143.4A CN201910208143A CN109868503A CN 109868503 A CN109868503 A CN 109868503A CN 201910208143 A CN201910208143 A CN 201910208143A CN 109868503 A CN109868503 A CN 109868503A
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Abstract
A kind of crucible assembly and long crystal furnace, are related to crystal growth equipment technical field.The crucible assembly includes silica crucible, graphite crucible and separation layer, and silica crucible is set in graphite crucible, and separation layer is set between silica crucible and graphite crucible, and separation layer is reacted for obstructing silica crucible and being in contact with graphite crucible.The long crystal furnace includes furnace body, the lifting rotating mechanism for lifting and rotating seed crystal, and above-mentioned crucible assembly, crucible assembly are located in furnace body, long crystal furnace further includes the heater being located on outside the graphite crucible of crucible assembly, wherein, for accommodating raw material in the silica crucible of crucible assembly.The crucible assembly can reduce the oxidative attack speed of graphite crucible, and then increase the service life of graphite crucible, while reduce the accumulation of the carbon oxygen in silicon single crystal rod, improve the total quality of silicon single crystal rod.
Description
Technical field
The present invention relates to crystal growth equipment technical fields, in particular to a kind of crucible assembly and long crystal furnace.
Background technique
Monocrystalline silicon, the i.e. monocrystal of silicon are a kind of more active nonmetalloids, have substantially complete lattice structure,
Different directions has different property, is a kind of good semiconductor material, is the important component of crystalline material, is in
The forward position of new material development.It is primarily used to sophisticated semiconductor chip wafer, sensor and solar energy power generating, heat supply etc.
Aspect is drawn in long crystal furnace using the polysilicon of high-purity.Long crystal furnace is the equipment for artificial-synthetic crystal, is
In inert gas (based on nitrogen, helium) environment, with heater by the polycrystalline materials such as polysilicon melt, with Grown by CZ Method without
The equipment of dislocation monocrystalline.The main procedure for producing of monocrystalline silicon includes that satisfactory polysilicon raw materials (are packed into long brilliant by pan feeding
In furnace), vacuumize, melt (heater), is long brilliant, is annealing, cooling and unload goods and (take out crystal silicon).
Currently, long crystal furnace, mainly for the production of silicon semiconductor material and solar level silicon materials, the country is partly led for producing
Main material-silicon single crystal rod of body wafer, sensor and solar battery is just drawn in long crystal furnace.It, which grows brilliant process, needs
Using silica crucible, using graphite crucible as support and heat-conducting layer outside silica crucible, silica crucible in the prior art with
The combination of graphite crucible is as shown in Figure 1.Since silica crucible main component is silica (SiO2), external graphite crucible
Ingredient is carbon (C), under the high-temperature condition of long brilliant process (generally more than 450 DEG C), quartz (SiO2) and graphite (C) can change
Reaction is learned, oxycarbide is generated, graphite crucible is not only made to be oxidized erosion, meanwhile, silica crucible and graphite crucible contact portion
Oxidation reaction, so that silicon atom is penetrated into the surface layer of graphite crucible, form one layer of carbon silicon binder course, crucible is caused to be broken, these
The service life of graphite crucible will be caused to decline；And the oxycarbide generated enters polycrystalline silicon melt or has grown
In silicon single crystal rod, so that the carbon oxygen in silicon single crystal rod is accumulated, the total quality of silicon single crystal rod is influenced.
The oxidative attack speed of graphite crucible how is reduced, is mesh to extend the service life of graphite crucible and silica crucible
Preceding technical problem urgently to be resolved.
Summary of the invention
The purpose of the present invention is to provide a kind of crucible assembly and long crystal furnaces, can reduce the oxidative attack of graphite crucible
Speed, and then the service life of graphite crucible is increased, while reducing the accumulation of the carbon oxygen in silicon single crystal rod, improve monocrystalline silicon
The total quality of stick.
The embodiment of the present invention is achieved in that
The one side of the embodiment of the present invention provides a kind of crucible assembly, which includes silica crucible, graphite crucible
And separation layer, the silica crucible are set in the graphite crucible, the separation layer is set to the silica crucible and the stone
Between black crucible, the separation layer is reacted for obstructing the silica crucible and being in contact with the graphite crucible.It can be dropped
The oxidative attack speed of low graphite crucible, and then the service life of graphite crucible is increased, while reducing in silicon single crystal rod
The accumulation of carbon oxygen, improves the total quality of silicon single crystal rod.
In preferred embodiments of the present invention, the material of the separation layer is carbofrax material, silicon nitride material or carbon
Any one in SiClx combination silicon nitride material.
In preferred embodiments of the present invention, the separation layer is coated on the outer wall of the silica crucible.
In preferred embodiments of the present invention, the separation layer is coated on the inner wall of the graphite crucible.
In preferred embodiments of the present invention, the separation layer includes multiple sub- isolation parts, and multiple sub- isolation parts are set
Between the silica crucible and the graphite crucible.
In preferred embodiments of the present invention, the cross sectional shape of the sub- isolation part is any in round or polygon
It is a kind of.
In preferred embodiments of the present invention, multiple sub- isolation parts are distributed in the silica crucible and the graphite earthenware
Between crucible.
In preferred embodiments of the present invention, the outside wall surface of the silica crucible is equipped with multiple corresponding with the sub- isolation part
The first groove, the sub- isolation part part is recessed in first groove；Alternatively, the inner wall of the graphite crucible is equipped with
Multiple the second grooves corresponding with the sub- isolation part, the sub- isolation part part are recessed in second groove.
In preferred embodiments of the present invention, the outside wall surface of the silica crucible is equipped with multiple corresponding with the sub- isolation part
The first groove, the inner wall of the graphite crucible is equipped with multiple the second grooves corresponding with the sub- isolation part, described first
Groove and second groove correspond, and described sub- isolation part a part is embedded in first groove, a part is embedded
In in second groove, some is exposed to the clearance layer between the silica crucible and the graphite crucible.
The another aspect of the embodiment of the present invention provides a kind of long crystal furnace, which includes furnace body, for lifting and rotating
Lifting rotating mechanism and above-mentioned crucible assembly, the crucible assembly of seed crystal are located in the furnace body, and the long crystal furnace is also
Heater outside graphite crucible including being located on the crucible assembly, wherein used in the silica crucible of the crucible assembly
In receiving raw material.
The beneficial effect of the embodiment of the present invention includes:
To sum up, the crucible assembly between graphite crucible and silica crucible due to being provided with separation layer, to prevent stone
It is in contact and reacts between black crucible and silica crucible, to reduce the oxidative attack speed of graphite crucible, and then increase
The service life of graphite crucible.Meanwhile it avoiding graphite crucible and reacting the entrance of the impurity such as the oxycarbide generated with silica crucible
Into polycrystalline silicon melt or the silicon single crystal rod grown, the carbon oxygen accumulation in silicon single crystal rod is reduced, monocrystalline silicon is improved
The total quality of stick ensures that long brilliant quality.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is the structural schematic diagram of the crucible assembly provided in the prior art；
Fig. 2 is one of the structural schematic diagram of crucible assembly provided in an embodiment of the present invention；
Fig. 3 is the second structural representation of crucible assembly provided in an embodiment of the present invention；
Fig. 4 is the third structural representation of crucible assembly provided in an embodiment of the present invention；
Fig. 5 is the four of the structural schematic diagram of crucible assembly provided in an embodiment of the present invention；
Fig. 6 is the five of the structural schematic diagram of crucible assembly provided in an embodiment of the present invention.
Icon: 100- crucible assembly；10- silica crucible；The first groove of 11-；h1The depth of-the first groove；12- quartz earthenware
The top surface of crucible；20- graphite crucible；The second groove of 21-；h2The depth of-the second groove；The top surface of 22- graphite crucible；30- isolation
Layer；The isolation part 31-；The height of the isolation part H-.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model that the present invention protects
It encloses.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, or be somebody's turn to do
Invention product using when the orientation or positional relationship usually put, be merely for convenience of description of the present invention and simplification of the description, without
It is that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore not
It can be interpreted as limitation of the present invention.In addition, term " first ", " second ", " third " etc. are only used for distinguishing description, and cannot manage
Solution is indication or suggestion relative importance.
In addition, the terms such as term "horizontal", "vertical" are not offered as requiring component abswolute level or pendency, but can be slightly
Low dip.It is not to indicate that the structure has been had to if "horizontal" only refers to that its direction is more horizontal with respect to for "vertical"
It is complete horizontal, but can be slightly tilted.
In the description of the present invention, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " setting ",
" installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be fixedly connected, may be a detachable connection or one
Connect to body；It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, it can also be indirect by intermediary
It is connected, can be the connection inside two elements.For the ordinary skill in the art, on being understood with concrete condition
State the concrete meaning of term in the present invention.
A kind of long crystal furnace is present embodiments provided, artificial-synthetic crystal is used for.The long crystal furnace includes furnace body, is located in furnace body
Crucible assembly 100, the lifting rotating mechanism for lifting and rotating seed crystal, and be located on outside crucible assembly 100 plus
Hot device, wherein crucible assembly 100 is for accommodating raw material.
It should be noted that first, long crystal furnace is when synthetic crystal, firstly, crystal raw material is put into crucible assembly
In 100, melted by the high temperature that heater generates.Then, the silicon liquid of fusing is slightly done and is cooled down, be allowed to generate certain mistake
Cold degree, then be inserted into bath surface with silicon single crystal body being fixed on seed shaft (referred to as seed crystal), to seed crystal and melt it is molten and
Afterwards, seed crystal is slowly pulled up, crystal will be grown in seed crystal lower end；Then, it is left to go out a Duan Changwei 100mm for control seeded growth
Right, diameter is the thin neck of 3mm~5mm, for eliminating atomic arrangement that pyrosol generates the strong thermal shock of seed crystal
Dislocation, this process are exactly seeding；Then, the size that amplification crystal diameter is required to technique, generally 75mm~300mm, this
A process is known as shouldering.Then, pulling rate is improved suddenly to carry out turning shoulder operation, makes shoulder approximate right angle.Then, into isometrical work
Skill promotes speed by control temperature of thermal field and crystal, grows the monocrystalline cylinder of certain specification size.Finally, to major part
When silicon solution has all completed crystallization, then crystal is gradually reduced and forms a tail shape cone, referred to as tailing-in technique.Such one
A crystal-pulling process is just basically completed, and can take out after certain heat preservation is cooling.
Second, heater is arranged in furnace body in (furnace chamber), and close to crucible assembly 100.Exemplary, heater can be set to
The side of the inclined bottom of crucible assembly 100.Heater is to the crystal raw material that loads in heating crucible component 100, by crystal original
The crystal that material is melt into liquid melts soup.Exemplary, heater can cooperate the shape of crucible assembly 100 to be annularly arranged, ring-type heating
Device is enclosed set on the periphery of crucible assembly 100.Wherein, graphite can be selected in the material of heater.
Referring to figure 2., above-mentioned crucible assembly 100 includes silica crucible 10, graphite crucible 20 and separation layer 30, quartz
Crucible 10 is set in graphite crucible 20, and separation layer 30 is set between silica crucible 10 and graphite crucible 20, and separation layer 30 is for hindering
It is in contact and reacts with graphite crucible 20 every silica crucible 10.
It should be noted that first, heater is located on the outside of the graphite crucible 20 of crucible assembly 100, wherein crucible
The silica crucible 10 of component 100 is used to load the crystal raw material of crystal bar to be grown into, such as polycrystalline silicon raw material.Graphite crucible 20 is used
Make the supporting layer and heat-conducting layer of silica crucible 10.
Second, separation layer 30 is arranged for preventing graphite crucible 20 from contacting generation chemical reaction with silica crucible 10
's.Should cannot occur with graphite crucible 20 at a temperature of it should be understood that the separation layer 30 is locating for the long brilliant process of long crystal furnace
Reaction.The selection of 30 material of separation layer is not particularly limited, as long as graphite crucible 20 and silica crucible 10 can be prevented to occur
Reaction, and the selection of 30 material of separation layer also can guarantee that its own is not reacted with graphite crucible 20, so, the earthenware
Crucible component 100 just can reduce the oxidative attack speed of graphite crucible 20, and then increase the service life of graphite crucible 20.
The set-up mode of third, separation layer 30 is not particularly limited, as long as silica crucible 10 and graphite crucible 20 can be prevented
Contact, exemplary, separation layer 30 can be isolated from graphite crucible 20 and quartzy earthenware in stratiform coating, in blocky or strip
Between crucible 10.
To sum up, the crucible assembly 100 due between graphite crucible 20 and silica crucible 10 be provided with separation layer 30, thus
It prevents to be in contact between graphite crucible 20 and silica crucible 10 and react, to reduce the oxidative attack speed of graphite crucible 20
Degree, and then increase the service life of graphite crucible 20.Meanwhile it avoiding graphite crucible 20 and reacting generation with silica crucible 10
The impurity such as oxycarbide enter in polycrystalline silicon melt or the silicon single crystal rod grown, reduce the carbon oxygen in silicon single crystal rod
Accumulation, improves the total quality of silicon single crystal rod, ensures that long brilliant quality.
Exemplary, the material of separation layer 30 can be carbofrax material, silicon nitride material or silicon carbide combination silicon nitride
Any one in material.
It should be noted that whether carbofrax material, silicon nitride material or be silicon carbide combination silicon nitride material,
Their thermal response temperature is above silica (i.e. silica crucible 10, fusing point is at 1700 DEG C or more), and significantly larger than polycrystalline
The melting temperature of silicon (melting temperature of polysilicon is between 1200 DEG C to 1400 DEG C).So, in the long brilliant mistake of long crystal furnace
Cheng Zhong, i.e., under 1200 DEG C to 1400 DEG C of high-temperature condition, long crystalline substance process is normally carried out without interruption, and because do not reach every
The thermal response temperature of 30 material of absciss layer, so separation layer 30 can't react with graphite crucible 20.Meanwhile silicon nitride bonded silicon
Carbofrax material belongs to a kind of associativity material other than above-mentioned advantage, and has energy-saving and environmental protection, high temperature resistant, corrosion-resistant etc.
Plurality of advantages.Therefore, which selects above-mentioned material to prevent graphite crucible 20 and silica crucible 10 to a certain extent
Between be in contact reaction, separation layer 30 itself will not be made to react with graphite crucible 20, to reduce graphite earthenware
The oxidative attack speed of crucible 20, and then increase the service life of graphite crucible 20.
Exemplary, incorporated by reference to referring to Fig. 2 and Fig. 3, separation layer 30 can be coated on the outer wall of silica crucible 10, can also be with
On inner wall coated on graphite crucible 20.In order to prevent graphite crucible 20 to contact with silica crucible 10 to the greatest extent, at other
Embodiment in, when separation layer 30 be coated on silica crucible 10 outer wall on when, separation layer 30 can also be from silica crucible 10
Side wall up extends the top surface 12 for being applied to silica crucible；When separation layer 30 is coated on the inner wall of graphite crucible 20, separation layer
30 can also up extend the top surface 22 for being applied to graphite crucible from the side wall of graphite crucible 20.
It should be noted that in the present embodiment, the coating thickness of separation layer 30 in 0.1mm between 5.0mm, separation layer
30 coating can be using vapour deposition process, gel sintering process or spray coating method etc..In addition, silica crucible 10 or graphite earthenware
Crucible 20 needs to carry out surface polishing treatment before the coating of prepares coating material.
Please in conjunction with referring to fig. 4 to fig. 6, separation layer 30 is in addition to that can be coated on graphite crucible 20 or silica crucible 10
Except, separation layer 30 can also be isolated between graphite crucible 20 and silica crucible 10 with solid forms.At this point, separation layer 30 can
To include multiple sub- isolation parts 31, multiple sub- isolation parts 31 are set between silica crucible 10 and graphite crucible 20.
It should be noted that first, multiple sub- isolation parts 31 are distributed between silica crucible 10 and graphite crucible 20, with true
Protect stress equalization everywhere.The cross sectional shape of sub- isolation part 31 can be the group of round or polygon any one or two kinds
It closes.
Second, in the present embodiment, between the graphite crucible 20 and silica crucible 10 of the isolation of sub- isolation part 31
Distance in 0.05mm between 10mm so that the presence of sub- isolation part 31 does not influence between silica crucible 10 and graphite crucible 20
Heating conduction.
Third, the material of sub- isolation part 31 can be carbofrax material, silicon nitride material or silicon nitride combined silicon carbide
The combination of any one or two kinds in material, such as: the material selection silicon carbide of a part of sub- isolation part 31, another part
The material selection silicon nitride of sub- isolation part 31.
Exemplary, multiple sub- isolation parts 31 can be embedded in the outside wall surface of silica crucible 10；Graphite can also be embedded in
On the inner wall of crucible 20；Can also a part be embedded in 10 outside wall surface of silica crucible, a part is embedded in graphite crucible 20
Inner wall on.It should be understood that these three set-up modes are for keeping apart graphite crucible 20 and silica crucible 10, so
There is gap between graphite crucible 20 and silica crucible 10.
Specifically, when multiple sub- isolation parts 31 are embedded in the outside wall surface of silica crucible 10, the outer wall of silica crucible 10
Face is equipped with multiple first grooves 11 corresponding with sub- isolation part 31, and sub- 31 part of isolation part is recessed in the first groove 11.At this point,
The height H of sub- isolation part is above the depth h of the first groove1's.
When multiple sub- isolation parts 31 are embedded on the inner wall of graphite crucible 20, the inner wall of graphite crucible 20 is equipped with more
A second groove 21 corresponding with sub- isolation part 31, sub- 31 part of isolation part are recessed in the second groove 21.At this point, sub- isolation part
Height H be above the depth h of the second groove2's.
When multiple sub- 31 a part of isolation part are embedded in 10 outside wall surface of silica crucible, a part is embedded in graphite crucible 20
Inner wall on when, the outside wall surface of silica crucible 10 is equipped with multiple first grooves 11 corresponding with sub- isolation part 31, graphite crucible
20 inner wall is equipped with multiple second grooves 21 corresponding with sub- isolation part 31, and the first groove 11 and the second groove 21 1 are a pair of
It answers, sub- 31 a part of isolation part is embedded in the first groove 11, and a part is embedded in the second groove 21, some is located at
Clearance layer between silica crucible 10 and graphite crucible 20.At this point, the height H of sub- isolation part is greater than the depth h of the first groove1
With the depth h of the second groove2The sum of.
It should be noted that the clearance layer between silica crucible 10 and graphite crucible 20 is the outer wall and stone of silica crucible 10
Gap between the inner wall of black crucible 20.
The foregoing is merely alternative embodiments of the invention, are not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of crucible assembly characterized by comprising
Silica crucible, graphite crucible and separation layer, the silica crucible are set in the graphite crucible, and the separation layer is set to
Between the silica crucible and the graphite crucible, the separation layer is sent out for obstructing the silica crucible and the graphite crucible
Raw haptoreaction.
2. crucible assembly according to claim 1, which is characterized in that the material of the separation layer is carbofrax material, nitrogen
Any one in silicon nitride material or silicon carbide combination silicon nitride material.
3. crucible assembly according to claim 2, which is characterized in that the separation layer is coated on the outer of the silica crucible
On wall.
4. crucible assembly according to claim 2, which is characterized in that the separation layer is coated on the interior of the graphite crucible
On wall.
5. crucible assembly according to claim 2, which is characterized in that the separation layer includes multiple sub- isolation parts, multiple
The sub- isolation part is set between the silica crucible and the graphite crucible.
6. crucible assembly according to claim 2, which is characterized in that the cross sectional shape of the sub- isolation part be it is round or
Any one in polygon.
7. crucible assembly according to claim 5, which is characterized in that multiple sub- isolation parts are distributed in the quartzy earthenware
Between crucible and the graphite crucible.
8. crucible assembly according to claim 5, which is characterized in that the outside wall surface of the silica crucible is equipped with multiple and institute
Corresponding first groove in sub- isolation part is stated, the sub- isolation part part is recessed in first groove；Alternatively, the graphite earthenware
The inner wall of crucible is equipped with multiple the second grooves corresponding with the sub- isolation part, and the sub- isolation part part is recessed in described second
In groove.
9. crucible assembly according to claim 5, which is characterized in that the outside wall surface of the silica crucible is equipped with multiple and institute
State corresponding first groove in sub- isolation part, the inner wall of the graphite crucible is equipped with multiple with the sub- isolation part corresponding second
Groove, first groove and second groove correspond, and described sub- isolation part a part is embedded at first groove
Interior, a part of to be embedded in second groove, some is exposed between the silica crucible and the graphite crucible
Clearance layer.
10. a kind of long crystal furnace, which is characterized in that including furnace body, the lifting rotating mechanism for lifting and rotating seed crystal, Yi Jiru
Crucible assembly described in any one of claim 1 to 9, the crucible assembly are located in the furnace body, and the long crystal furnace is also
Heater outside graphite crucible including being located on the crucible assembly, wherein used in the silica crucible of the crucible assembly
In receiving raw material.
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| CN201910208143.4A CN109868503A (en) | 2019-03-19 | 2019-03-19 | A kind of crucible assembly and long crystal furnace |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112030230A (en) * | 2020-08-11 | 2020-12-04 | 杨文伟 | Semiconductor material processing system |
| CN112850713A (en) * | 2020-06-09 | 2021-05-28 | 北京世纪金光半导体有限公司 | Synthesis and treatment method of silicon carbide powder |
| CN113862779A (en) * | 2021-09-29 | 2021-12-31 | 西安奕斯伟材料科技有限公司 | Crucible assembly and crystal pulling furnace |
| CN113862778A (en) * | 2021-09-30 | 2021-12-31 | 西安奕斯伟材料科技有限公司 | Crucible assembly, crystal pulling furnace and method for pulling monocrystalline silicon rod |
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| CN102041550A (en) * | 2009-10-23 | 2011-05-04 | 上海杰姆斯电子材料有限公司 | Method for prolonging service life of single crystal furnace thermal field crucible, and Czochralski crystal growing furnace |
| CN102995104A (en) * | 2012-12-04 | 2013-03-27 | 江苏协鑫硅材料科技发展有限公司 | Method and device for casting polycrystalline silicon or mono-like silicon |
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| JPS5930794A (en) * | 1982-08-09 | 1984-02-18 | Toshiba Ceramics Co Ltd | Melting crucible device for pulling up single crystal |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112850713A (en) * | 2020-06-09 | 2021-05-28 | 北京世纪金光半导体有限公司 | Synthesis and treatment method of silicon carbide powder |
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| CN113862779A (en) * | 2021-09-29 | 2021-12-31 | 西安奕斯伟材料科技有限公司 | Crucible assembly and crystal pulling furnace |
| CN113862778A (en) * | 2021-09-30 | 2021-12-31 | 西安奕斯伟材料科技有限公司 | Crucible assembly, crystal pulling furnace and method for pulling monocrystalline silicon rod |
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Application publication date: 20190611 |
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| RJ01 | Rejection of invention patent application after publication |