CN102995104A - Method and device for casting polycrystalline silicon or mono-like silicon - Google Patents
Method and device for casting polycrystalline silicon or mono-like silicon Download PDFInfo
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- CN102995104A CN102995104A CN2012105126736A CN201210512673A CN102995104A CN 102995104 A CN102995104 A CN 102995104A CN 2012105126736 A CN2012105126736 A CN 2012105126736A CN 201210512673 A CN201210512673 A CN 201210512673A CN 102995104 A CN102995104 A CN 102995104A
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Abstract
The invention relates to a method for casting polycrystalline silicon or mono-like silicon. The method comprises the following steps: an isolating layer is arranged between a crucible of a polycrystalline silicon ingot furnace and a graphite guard plate and is used for inhibiting SiO2 of the external surface of the crucible from reaction with C in the graphite guard plate during an ingot casting process; and the polycrystalline silicon ingot furnace is used to cast polycrystalline silicon or mono-like silicon through a directional solidification method. In addition, the invention further provides a device for casting polycrystalline silicon or mono-like silicon. According to the method and the device for casting polycrystalline silicon or mono-like silicon, the isolating layer is arranged between the crucible and the graphite guard plate and is used for inhibiting SiO2 of the external surface of the crucible from reaction with C in the graphite guard plate during the ingot casting process, thus the C content in the polycrystalline silicon ingot furnace can be reduced, the SiC impurity precipitation formation is reduced, the C impurities and defect density of the cast polycrystalline silicon or mono-like silicon are reduced, and furthermore, the ingot casting finished product rate, slice yield and battery piece conversion efficiency of the cast polycrystalline silicon or mono-like silicon are improved.
Description
Technical field
The present invention relates to the solar energy photovoltaic material preparation field, be specifically related to method and the device of a kind of casting polycrystalline silicon or quasi-monocrystalline silicon.
Background technology
At present, utilize casting production sun power to receive increasing concern with the method for polysilicon.In the ingot casting process, the SiO of hot stage crucible surface especially
2Can with the graphite backplate in C react and generate CO, increased like this C content in the stove, the generation of SiC contamination precipitation is increased, the impurity in the casting polycrystalline silicon increases, defect concentration increases, thereby reduces yield rate and the section yield of casting polycrystalline silicon.The SiC that local carbon deposition produces is the one of the main reasons of cell piece leakage point of electricity generation especially, the foreign matter content height causes defect concentration (cryptocrystal, dislocation etc.) higher in the silicon chip simultaneously, so that leakage current is higher, efficiency of conversion is on the low side, and the carbon content that reduces in the silicon ingot becomes one of subject matter of casting polycrystalline silicon urgent need solution.In addition, the carbon content that reduces in the silicon ingot also is the quasi-monocrystalline silicon urgent problem that adopts casting to produce.
Summary of the invention
Based on this, be necessary for crucible surface SiO in the ingot casting process
2Can with the graphite backplate in C react and cause the problem that C impurity increases, defect concentration increases in casting polycrystalline silicon or the quasi-monocrystalline silicon, the method for a kind of casting polycrystalline silicon or quasi-monocrystalline silicon is provided, can reduce the carbon content in casting polycrystalline silicon or the quasi-monocrystalline silicon.
The method of a kind of casting polycrystalline silicon or quasi-monocrystalline silicon may further comprise the steps: be arranged in the ingot casting process between the crucible of polycrystalline silicon ingot or purifying furnace and graphite backplate, hot stage especially suppresses the SiO of crucible outside surface
2The sealing coat that reacts with C in the graphite backplate; Use described polycrystalline silicon ingot or purifying furnace by directional solidification method casting polycrystalline silicon or quasi-monocrystalline silicon.
Therein among embodiment, described at polycrystalline silicon ingot or purifying furnace crucible and the graphite backplate between be arranged on the SiO that suppresses the crucible outside surface in the ingot casting process
2The step of the sealing coat that reacts with C in the graphite backplate comprises: the medial surface relative with crucible at the graphite backplate forms silicon nitride or coat of silicon carbide, perhaps forms silicon nitride or coat of silicon carbide at the crucible outside surface.
Among embodiment, the outside surface of described crucible comprises the side relative with described graphite backplate therein, and described silicon nitride or coat of silicon carbide are arranged on the side of described crucible.
Therein among embodiment, described at polycrystalline silicon ingot or purifying furnace crucible and the graphite backplate between be arranged on the SiO that suppresses the crucible outside surface in the ingot casting process
2The step of the sealing coat that reacts with C in the graphite backplate comprises: the outside surface at described crucible arranges the sealing coat that is formed by metallic gasket and/or ceramic layer, the sealing coat that is perhaps formed by metallic gasket and/or ceramic layer in the medial surface setting relative with crucible of described graphite backplate.
Among embodiment, described sealing coat can arrange by the mode that hangs or bolt is fixing therein.
Among embodiment, described metallic gasket is tungsten sheet or molybdenum sheet therein, and described ceramic plate is silicon nitride or silicon carbide ceramics sheet.
In addition, also be necessary to provide the device of a kind of casting polycrystalline silicon or quasi-monocrystalline silicon, comprise polycrystalline silicon ingot or purifying furnace, be provided with heat exchange platform in the described polycrystalline silicon ingot or purifying furnace, described heat exchange platform is provided with crucible and graphite backplate, is provided with the SiO that suppresses the crucible outside surface in the ingot casting process between described crucible and the graphite backplate
2The sealing coat that reacts with C in the graphite backplate.
Among embodiment, described sealing coat is metallic gasket and/or ceramic layer that the outside surface at described crucible arranges therein, perhaps be metallic gasket and/or ceramic layer in the medial surface setting relative with crucible of described graphite backplate.
Among embodiment, described metallic gasket is tungsten sheet or molybdenum sheet therein, and described ceramic plate is silicon nitride or silicon carbide ceramics sheet.
Therein among embodiment, silicon nitride or the coat of silicon carbide of described sealing coat for forming at the described graphite backplate medial surface relative with crucible, or be silicon nitride or the coat of silicon carbide that the outside surface at described crucible forms.
The method of above-mentioned casting polycrystalline silicon or quasi-monocrystalline silicon and device arrange sealing coat between crucible and graphite backplate, to suppress the SiO of crucible outside surface in the ingot casting process
2React with C in the graphite backplate and to generate CO, thereby can reduce C content in the polycrystalline silicon ingot or purifying furnace, the generation of SiC contamination precipitation is reduced, the minimizing of C impurity, defect concentration in casting polycrystalline silicon or the quasi-monocrystalline silicon are reduced, and then improve the efficiency of conversion of ingot casting yield rate, section yield and the cell piece of casting polycrystalline silicon or quasi-monocrystalline silicon.
Description of drawings
Fig. 1 is the structural representation of the device of present embodiment casting polycrystalline silicon or quasi-monocrystalline silicon;
Fig. 2 is the partial enlarged drawing of Fig. 1.
Embodiment
The below illustrates take casting polycrystalline silicon as example how the casting polycrystalline silicon of present embodiment or the method for quasi-monocrystalline silicon are implemented.In the casting polycrystalline silicon, crucible is placed on the heat exchange platform of polycrystalline silicon ingot or purifying furnace after holding the silicon material, and the graphite backplate centers in the crucible outside to be placed.The outside surface of crucible comprises bottom surface and side, and wherein the bottom surface is bearing on heat exchange platform, and the side is relative with the graphite backplate.In the ingot casting process, hot stage especially, the SiO of crucible side
2Easily and the C in the graphite backplate react.Thus, the design of the method for the casting polycrystalline silicon of following examples or quasi-monocrystalline silicon is: be arranged on the SiO that suppresses the crucible outside surface in the ingot casting process between the crucible of polycrystalline silicon ingot or purifying furnace and graphite backplate
2With the sealing coat that C in the graphite backplate reacts, then use described polycrystalline silicon ingot or purifying furnace by directional solidification method casting polycrystalline silicon or quasi-monocrystalline silicon.Directional solidification method refers to melting in same crucible, utilize the effect of segregation of impurity element in solid phase and liquid phase to reach the purpose of purification, by the unidirectional heat current control, make the melt in the crucible reach the certain temperature gradient simultaneously, thereby obtain the columanar structure along direction of growth proper alignment.
Between crucible and the graphite backplate sealing coat is set and generally comprises following mode: sealing coat is set in the crucible side, at the graphite backplate medial surface relative with crucible sealing coat is set.
Illustrate below in conjunction with specific embodiment how above-mentioned design realizes.
Embodiment 1
By coating method silicon nitride or silicon carbide suspension are coated to the outer side of crucible or form silicon nitride or coat of silicon carbide in the relative inner of graphite backplate, as sealing coat, in the ingot casting process, to suppress the SiO of crucible outside surface
2React with the C in the graphite backplate.During coating method is selected from spraying, brushing, sprays and infiltrates one or more.Silicon nitride (or silicon carbide) suspension is to dispose in proportion with silicon nitride (or silicon carbide) and water to form, and perhaps uses silicon sol, polyvinyl alcohol, silicon nitride (or silicon carbide) and water to dispose in proportion and forms.With this crucible and the backplate polycrystalline silicon material of packing into, carry out directional solidification growth, use the carbon content in Fourier infrared spectrograph (NICOLET6700) the test polycrystal silicon ingot, than the carbon content low 1.9% that does not arrange in the common silicon ingot that sealing coat obtains, through infra-red inspection tester (Semilab IRB-50) test, the foreign matter content that statistics obtains is lower by about 1% than the foreign matter content of normal polycrystal silicon ingot, and the section yield improves 4%, and stria sheet ratio reduces by 1.7%.
Embodiment 2
Medial surface at the graphite backplate of polycrystalline silicon ingot or purifying furnace arranges metallic gasket, ceramic layer, such as molybdenum sheet, the tungsten sheet, silicon nitride or silicon carbide ceramics pad etc., as sealing coat, can be fixed on by the mode that hangs or bolt is fixing the inboard of graphite backplate, in the ingot casting process, to suppress the SiO of crucible outside surface
2React with the C in the graphite backplate, the mode that suspension or bolt are fixed is so that sealing coat can be adjusted into fixed or detachable as required.The polycrystalline silicon material directional solidification growth of packing into, carbon content in the polycrystal silicon ingot that use Fourier infrared spectrograph (NICOLET6700) test vector generation for testing IC obtains, than the carbon content low 2.0% that does not arrange in the common silicon ingot that sealing coat obtains, through infra-red inspection tester (Semilab IRB-50) test, the foreign matter content of the comparable normal polycrystal silicon ingot of foreign matter content that statistics obtains low about 1.1%, the section yield improves 4.1%, and stria sheet ratio reduces by 1.8%.
Embodiment 3
Sealing coat can be arranged on the outside surface on the crucible, can be metallic gasket, ceramic layer, such as molybdenum sheet, and the tungsten sheet, silicon nitride or silicon carbide ceramics pad etc. are in order to suppress the SiO of crucible outside surface in the ingot casting process
2React with the C in the graphite backplate.The polycrystalline silicon material directional solidification growth of packing into, carbon content in the polycrystal silicon ingot that use Fourier infrared spectrograph (NICOLET6700) test vector generation for testing IC obtains, than the carbon content low 2.2% that does not arrange in the common silicon ingot that sealing coat obtains, through infra-red inspection tester (Semilab IRB-50) test, the foreign matter content that statistics obtains is than normal polycrystal silicon ingot foreign matter content low about 1.3%, the section yield improves 4.3%, and stria sheet ratio reduces by 1.8%.
Be appreciated that aforesaid method is not only applicable to casting polycrystalline silicon, also be applicable to cast quasi-monocrystalline silicon, as long as sealing coat is set, just can reduce the carbon content in the casting quasi-monocrystalline silicon.
Please refer to Fig. 1 and Fig. 2, present embodiment also provides the device of a kind of casting polycrystalline silicon or quasi-monocrystalline silicon, and it comprises a polycrystalline silicon ingot or purifying furnace.Be provided with heat exchange platform 110 in the polycrystalline silicon ingot or purifying furnace, place crucible 120 and graphite backplate 130 on the heat exchange platform 110.Between crucible 120 and the graphite backplate 130 sealing coat 140 is set.
Utilize the casting polycrystalline silicon of present embodiment or the device of quasi-monocrystalline silicon, by directional solidification method casting polycrystalline silicon or quasi-monocrystalline silicon, because the existence of sealing coat 140 can reduce the carbon content in casting polycrystalline silicon or the quasi-monocrystalline silicon.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. the method for a casting polycrystalline silicon or quasi-monocrystalline silicon is characterized in that, may further comprise the steps:
Between the crucible of polycrystalline silicon ingot or purifying furnace and graphite backplate, be arranged on the SiO that suppresses the crucible outside surface in the ingot casting process
2The sealing coat that reacts with C in the graphite backplate;
Use described polycrystalline silicon ingot or purifying furnace by directional solidification method casting polycrystalline silicon or quasi-monocrystalline silicon.
2. the method for casting polycrystalline silicon according to claim 1 or quasi-monocrystalline silicon is characterized in that, described at polycrystalline silicon ingot or purifying furnace crucible and the graphite backplate between be arranged on the SiO that suppresses the crucible outside surface in the ingot casting process
2The step of the sealing coat that reacts with C in the graphite backplate comprises: the medial surface relative with crucible at the graphite backplate forms silicon nitride or coat of silicon carbide, perhaps forms silicon nitride or coat of silicon carbide at the crucible outside surface.
3. the method for casting polycrystalline silicon according to claim 2 or quasi-monocrystalline silicon is characterized in that, the outside surface of described crucible comprises the side relative with described graphite backplate, and described silicon nitride or coat of silicon carbide are arranged on the side of described crucible.
4. the method for casting polycrystalline silicon according to claim 1 or quasi-monocrystalline silicon is characterized in that, described at polycrystalline silicon ingot or purifying furnace crucible and the graphite backplate between be arranged on the SiO that suppresses the crucible outside surface in the ingot casting process
2The step of the sealing coat that reacts with C in the graphite backplate comprises: the outside surface at described crucible arranges the sealing coat that is formed by metallic gasket and/or ceramic layer, the sealing coat that is perhaps formed by metallic gasket and/or ceramic layer in the medial surface setting relative with crucible of described graphite backplate.
5. the method for casting polycrystalline silicon according to claim 4 or quasi-monocrystalline silicon is characterized in that, described sealing coat can arrange by the mode that hangs or bolt is fixing.
6. according to claim 4 or the method for 5 described casting polycrystalline silicons or quasi-monocrystalline silicon, it is characterized in that described metallic gasket is tungsten sheet or molybdenum sheet, described ceramic plate is silicon nitride or silicon carbide ceramics sheet.
7. the device of a casting polycrystalline silicon or quasi-monocrystalline silicon, comprise polycrystalline silicon ingot or purifying furnace, be provided with heat exchange platform in the described polycrystalline silicon ingot or purifying furnace, described heat exchange platform is provided with crucible and graphite backplate, it is characterized in that: be provided with the SiO that suppresses the crucible outside surface in the ingot casting process between described crucible and the graphite backplate
2The sealing coat that reacts with C in the graphite backplate.
8. the device of casting polycrystalline silicon according to claim 7 or quasi-monocrystalline silicon, it is characterized in that, described sealing coat is metallic gasket and/or ceramic layer that the outside surface at described crucible arranges, perhaps is metallic gasket and/or the ceramic layer that arranges at the described graphite backplate medial surface relative with crucible.
9. the device of casting polycrystalline silicon according to claim 8 or quasi-monocrystalline silicon is characterized in that, described metallic gasket is tungsten sheet or molybdenum sheet, and described ceramic plate is silicon nitride or silicon carbide ceramics sheet.
10. the device of casting polycrystalline silicon according to claim 7 or quasi-monocrystalline silicon, it is characterized in that, silicon nitride or the coat of silicon carbide of described sealing coat for forming at the described graphite backplate medial surface relative with crucible, or be silicon nitride or the coat of silicon carbide that the outside surface at described crucible forms.
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| CN104109903A (en) * | 2014-07-28 | 2014-10-22 | 常熟华融太阳能新型材料有限公司 | Recyclable quartz ceramic crucible for polycrystalline silicon ingot and preparation method of quartz ceramic crucible |
| CN105408529A (en) * | 2013-09-25 | 2016-03-16 | Lg矽得荣株式会社 | Crucible and ingot growing device comprising same |
| CN105442042A (en) * | 2016-02-02 | 2016-03-30 | 江西赛维Ldk太阳能高科技有限公司 | Ingot furnace for reducing carbon content of polycrystalline silicon ingot and preparation method of ingot furnace |
| CN105696070A (en) * | 2016-03-15 | 2016-06-22 | 常熟华融太阳能新型材料有限公司 | Novel graphite protective plate for polysilicon ingot casting and preparation method thereof |
| CN105780112A (en) * | 2016-05-25 | 2016-07-20 | 晶科能源有限公司 | Ingot casting graphite guard board and manufacturing method thereof |
| CN106521621A (en) * | 2016-09-20 | 2017-03-22 | 江西赛维Ldk太阳能高科技有限公司 | Ingot casting method capable of reducing red edge width of polycrystalline silicon ingot, polycrystalline silicon ingot and crucible for polycrystalline silicon ingot casting |
| CN106637398A (en) * | 2017-01-23 | 2017-05-10 | 晶科能源有限公司 | Polycrystalline ingot casting system |
| CN109306518A (en) * | 2018-12-11 | 2019-02-05 | 晶科能源有限公司 | A kind of growing silicon ingot/crystal bar crucible and preparation method thereof |
| CN109868503A (en) * | 2019-03-19 | 2019-06-11 | 苏州新美光纳米科技有限公司 | A kind of crucible assembly and long crystal furnace |
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| CN102653880A (en) * | 2012-04-20 | 2012-09-05 | 镇江环太硅科技有限公司 | Casting device |
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Patent Citations (1)
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| CN102653880A (en) * | 2012-04-20 | 2012-09-05 | 镇江环太硅科技有限公司 | Casting device |
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| CN105408529A (en) * | 2013-09-25 | 2016-03-16 | Lg矽得荣株式会社 | Crucible and ingot growing device comprising same |
| CN104109903A (en) * | 2014-07-28 | 2014-10-22 | 常熟华融太阳能新型材料有限公司 | Recyclable quartz ceramic crucible for polycrystalline silicon ingot and preparation method of quartz ceramic crucible |
| US10343573B2 (en) | 2014-12-19 | 2019-07-09 | Brose Fahrzeugteile Gmbh & Co. Kg, Coburg | Vehicle seat assembly having a reset device |
| CN105442042A (en) * | 2016-02-02 | 2016-03-30 | 江西赛维Ldk太阳能高科技有限公司 | Ingot furnace for reducing carbon content of polycrystalline silicon ingot and preparation method of ingot furnace |
| CN105442042B (en) * | 2016-02-02 | 2018-01-12 | 江西赛维Ldk太阳能高科技有限公司 | It is a kind of to be used to reduce ingot furnace of polycrystal silicon ingot carbon content and preparation method thereof |
| CN105696070A (en) * | 2016-03-15 | 2016-06-22 | 常熟华融太阳能新型材料有限公司 | Novel graphite protective plate for polysilicon ingot casting and preparation method thereof |
| CN105780112B (en) * | 2016-05-25 | 2019-01-29 | 晶科能源有限公司 | A kind of ingot casting graphite protective plate and preparation method thereof |
| CN105780112A (en) * | 2016-05-25 | 2016-07-20 | 晶科能源有限公司 | Ingot casting graphite guard board and manufacturing method thereof |
| CN106521621B (en) * | 2016-09-20 | 2019-01-29 | 江西赛维Ldk太阳能高科技有限公司 | A kind of casting ingot method, polycrystal silicon ingot and crucible used for polycrystalline silicon ingot casting reducing the red hem width degree of polycrystal silicon ingot |
| CN106521621A (en) * | 2016-09-20 | 2017-03-22 | 江西赛维Ldk太阳能高科技有限公司 | Ingot casting method capable of reducing red edge width of polycrystalline silicon ingot, polycrystalline silicon ingot and crucible for polycrystalline silicon ingot casting |
| CN106637398A (en) * | 2017-01-23 | 2017-05-10 | 晶科能源有限公司 | Polycrystalline ingot casting system |
| CN109306518A (en) * | 2018-12-11 | 2019-02-05 | 晶科能源有限公司 | A kind of growing silicon ingot/crystal bar crucible and preparation method thereof |
| CN109868503A (en) * | 2019-03-19 | 2019-06-11 | 苏州新美光纳米科技有限公司 | A kind of crucible assembly and long crystal furnace |
| CN110125345A (en) * | 2019-05-21 | 2019-08-16 | 江苏新伊菲科技有限公司 | A kind of micro- ingot continuous casting equipment |
| CN115340388A (en) * | 2022-09-06 | 2022-11-15 | 烟台核晶陶瓷新材料有限公司 | Preparation method of silicon nitride square brick for mono-like ingot casting and quartz crucible |
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