CN202913085U - Casting device - Google Patents

Casting device Download PDF

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Publication number
CN202913085U
CN202913085U CN 201220173345 CN201220173345U CN202913085U CN 202913085 U CN202913085 U CN 202913085U CN 201220173345 CN201220173345 CN 201220173345 CN 201220173345 U CN201220173345 U CN 201220173345U CN 202913085 U CN202913085 U CN 202913085U
Authority
CN
China
Prior art keywords
crucible
plates
casting device
graphite protective
protective plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201220173345
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Chinese (zh)
Inventor
司荣进
袁志钟
王禄堡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Meike Solar Technology Co Ltd
Original Assignee
Zhenjiang Huantai Silicon Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhenjiang Huantai Silicon Technology Co Ltd filed Critical Zhenjiang Huantai Silicon Technology Co Ltd
Priority to CN 201220173345 priority Critical patent/CN202913085U/en
Application granted granted Critical
Publication of CN202913085U publication Critical patent/CN202913085U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model discloses a casting device. The casting device comprises a crucible and graphite protective plates, wherein the graphite protective plates are positioned at the top and on the outer side of the crucible; the casting device comprises molybdenum plate isolating layers; and molybdenum plates are positioned between the crucible and the graphite protective plates. According to the utility model, through additionally arranging the molybdenum plate isolating layers between the crucible and the graphite protective plates, carbon vapor generated by the graphite protective plates at a high temperature and entering silicon crystals in the crucible is reduced; the reaction between the crucible and the graphite protective plates at the high temperature is stopped; and impurities in a polycrystalline pipeline during backwashing argon are prevented from entering silicon materials. As further improvement of the novel casting device disclosed by the utility model, the thicknesses of the molybdenum plates are 0.5-5 mm, the shapes of the molybdenum plates are consistent with those of the graphite protective plates and the molybdenum plates are integrally connected with the graphite protective plates; therefore, simplicity and convenience for actual operation are achieved.

Description

Casting device
Technical field
The utility model belongs to the solar energy polycrystalline silicon casting technology field, relates in particular to a kind of casting device that reduces carbon content in the casting polycrystalline silicon.
Background technology
All the time, the energy is the human focus of paying close attention to the most all the time, traditional energy such as oil, and Sweet natural gas, the Nonrenewable resources such as colliery constantly consume, and reserves sharply descend, and simultaneously, the use of traditional energy has also also produced negative impact to global environment.
Solar electrical energy generation has been come into people's life gradually as a kind of new forms of energy mode.As the base mateiral silicon wafer of solar cell, the photoelectric transformation efficiency of its material directly affects the generated output of this solar cell, how to improve the efficiency of conversion of sun silicon wafer, and reducing optical attenuation is each photovoltaic producer problem demanding prompt solution.Carbon is a kind of main impurity in the casting polycrystalline silicon, and its basic character (comprising segregation coefficient, solid solubility, spread coefficient, measurement etc.) is identical with pulling of silicon single crystal.But, because the equipment thermal field of casting polycrystalline silicon is huge and complicated, in crystal casting or directional freeze process, there is a large amount of carbon evaporations in graphite under heater high-temperature, can pollute crystalline silicon, so, carbon content in the casting polycrystalline silicon is higher, has had a strong impact on the quality of polysilicon chip.
The utility model content
For above-mentioned technical problem, the utility model provides the casting device of carbon content in a kind of effective reduction casting polycrystalline silicon.
The utility model is achieved by the following technical programs, and a kind of casting device comprises crucible and the graphite backplate that is positioned at described crucible top and the outside, and described casting device comprises the molybdenum plate sealing coat, and described molybdenum plate is between crucible and graphite backplate.
The utility model reduces the carbon vapor that the graphite backplate produces under the high temperature and enters in the interior silicon crystal of crucible by add the molybdenum plate sealing coat between crucible and graphite backplate; The reaction of crucible and graphite backplate under the prevention condition of high temperature; Impurity when argon gas is backwashed in prevention in the polycrystalline pipeline enters the silicon material.
As the further improvement of the utility model casting device, described molybdenum plate thickness is 0.5mm-5mm, profile consistent with graphite backplate profile and both connect as one, simple and convenient when actually operating.
Description of drawings
Accompanying drawing is the molybdenum plate insulation layer structure schematic diagram of the utility model casting device.
Embodiment
Below in conjunction with accompanying drawing the utility model is made and to be further specified.
According to position of mounting hole on the molybdenum plate top board 1, at graphite top board corresponding position processing mounting holes, and remain in the powdered graphite on graphite top board surface when removing punching, with the graphite bolt molybdenum plate is fixed on the graphite top board, using the same method wraps up the graphite backplate of side around the crucible with molybdenum plate side plate 2, before shove charge, surperficial with non-dust cloth wiping molybdenum plate, remove the dust that is glued, the quartz crucible that silicon material, graphite backplate and molybdenum plate sealing coat are housed is dropped in the polycrystalline furnace.
Silicon material in the described crucible is limited not touch molybdenum plate, can prevent that like this molybdenum plate is not damaged by silicon material institute corrode under the high temperature.The thickness of molybdenum plate is take 0.5mm-5mm as good.
The description of above embodiment is comparatively concrete, detailed; but can not therefore be interpreted as the restriction to this patent scope; should be noted that; for the person of ordinary skill of the art; without departing from the concept of the premise utility; can also make some distortion and improvement, these all belong to protection domain of the present utility model.

Claims (3)

1. a casting device comprises crucible and the graphite backplate that is positioned at described crucible top and the outside, and it is characterized in that: described casting device comprises the molybdenum plate sealing coat, and described molybdenum plate sealing coat is between crucible and graphite backplate.
2. casting device according to claim 1, it is characterized in that: described molybdenum plate thickness is 0.5mm--5mm, profile consistent with graphite backplate profile and both connect as one.
3. casting device according to claim 2, it is characterized in that: described molybdenum plate and graphite backplate are with bolts.
CN 201220173345 2012-04-20 2012-04-20 Casting device Expired - Lifetime CN202913085U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220173345 CN202913085U (en) 2012-04-20 2012-04-20 Casting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220173345 CN202913085U (en) 2012-04-20 2012-04-20 Casting device

Publications (1)

Publication Number Publication Date
CN202913085U true CN202913085U (en) 2013-05-01

Family

ID=48161412

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220173345 Expired - Lifetime CN202913085U (en) 2012-04-20 2012-04-20 Casting device

Country Status (1)

Country Link
CN (1) CN202913085U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102653880A (en) * 2012-04-20 2012-09-05 镇江环太硅科技有限公司 Casting device
CN108977877A (en) * 2018-09-17 2018-12-11 江苏协鑫硅材料科技发展有限公司 Crucible guard boards and its application method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102653880A (en) * 2012-04-20 2012-09-05 镇江环太硅科技有限公司 Casting device
CN108977877A (en) * 2018-09-17 2018-12-11 江苏协鑫硅材料科技发展有限公司 Crucible guard boards and its application method

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20201217

Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province

Patentee after: Jiangsu Meike Solar Energy Technology Co.,Ltd.

Address before: 212211 Huantai Industrial Park, Youfang Town, Yangzhong City, Zhenjiang City, Jiangsu Province

Patentee before: ZHENJIANG HUANTAI SILICON TECHNOLOGY Co.,Ltd.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province

Patentee after: Jiangsu Meike Solar Energy Technology Co., Ltd

Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province

Patentee before: Jiangsu Meike Solar Energy Technology Co., Ltd

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20130501