CN214736204U - Guide cylinder and guide assembly - Google Patents
Guide cylinder and guide assembly Download PDFInfo
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- CN214736204U CN214736204U CN202120446177.XU CN202120446177U CN214736204U CN 214736204 U CN214736204 U CN 214736204U CN 202120446177 U CN202120446177 U CN 202120446177U CN 214736204 U CN214736204 U CN 214736204U
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Abstract
The utility model relates to a draft tube and guide assembly install in the furnace body inboard that has the crucible, set up relatively with the crucible, including interior draft tube, outer draft tube and support ring, wherein: the support ring is arranged on the inner side of the outer guide cylinder and is connected with the end part of the outer guide cylinder close to the crucible, and the support ring is a graphite support ring; the inner guide cylinder is of a cavity type structure with openings at two ends, the end part close to the crucible is arranged on the support ring, the section of the opening end of the inner guide cylinder close to the crucible is smaller than the section of the opening end far away from the crucible in the axial direction of the inner guide cylinder, and the inner guide cylinder is a quartz inner guide cylinder; the outer guide cylinder is a cavity structure with two open ends and is covered outside the inner guide cylinder. This draft tube and guide assembly can increase the ascending temperature gradient of longitudinal direction, promote crystal and carry and draw speed, improve the production efficiency of monocrystalline silicon, and for the monocrystalline silicon growth provides purer growth environment, extension minority carrier life cycle, improve the monocrystalline silicon quality.
Description
Technical Field
The utility model relates to a semiconductor material preparation technical field especially relates to a draft tube and guide assembly for monocrystalline silicon production.
Background
Currently, with the continuous development of photovoltaic manufacturing technology, high-quality, low-cost monocrystalline silicon wafers are becoming the most competitive products. The Czochralski single crystal growth furnace is used as main equipment for preparing the single crystal silicon wafer and provides a thermal field environment for the growth of the single crystal silicon. The guide cylinder is used as a part of the thermal field and is used for isolating the thermal field, so that the internal thermal field of the monocrystalline silicon growth area is far higher than the external thermal field, a larger temperature gradient is created for monocrystalline silicon growth, and a guide effect is achieved on high-temperature protective gas.
In the prior art, the guide cylinder is generally made of graphite or C/C composite material, the impurity content is high, the impurities can diffuse into a monocrystalline silicon growth area under a high-temperature condition, the monocrystalline silicon growth environment is polluted, the minority carrier lifetime is short, and the quality of the monocrystalline silicon is reduced. And the graphite or the C/C composite material has poor heat insulation performance, so that the temperature gradient inside and outside the guide cylinder is small, the crystal pulling speed is low, and the production efficiency of the monocrystalline silicon is influenced.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide a draft tube and a draft assembly for solving the problems of poor quality of monocrystalline silicon and low crystal pulling speed in monocrystalline silicon production.
The utility model provides a draft tube, installs in the furnace body inboard that has the crucible, and with the crucible sets up relatively, including interior draft tube, outer draft tube and support ring, wherein:
the support ring is arranged on the inner side of the outer guide cylinder and is connected with the end part, close to the crucible, of the outer guide cylinder, and the support ring is a graphite support ring;
the inner guide cylinder is of a cavity type structure with openings at two ends, the end part close to the crucible is arranged on the support ring, the section of the opening end close to the crucible is smaller than that of the opening end far away from the crucible in the axial direction of the inner guide cylinder, and the inner guide cylinder is a quartz inner guide cylinder;
the outer guide cylinder is of a cavity type structure with openings at two ends, the outer guide cylinder is covered on the outer side of the inner guide cylinder, and the section of the opening end of the outer guide cylinder, which is far away from the crucible, is smaller than the section of the opening end of the inner guide cylinder, which is far away from the crucible.
In the above-mentioned draft tube, interior draft tube and outer draft tube are both ends open-ended cavity formula structure, and the open end cross-section that the crucible was kept away from to outer draft tube is less than the open end cross-section that the crucible was kept away from to interior draft tube, so that the inside of interior draft tube is formed with the passageway that is used for high temperature protective gas to flow, and interior draft tube is on its axis direction, the cross-section that is close to the crucible open end is less than the cross-section of keeping away from the crucible open end, make high temperature protective gas when through interior draft tube, the gas flow speed accelerates, can take away the crystallization latent heat of crystal growth liquid level top in the crucible fast, increase the ascending temperature gradient of draft tube axis direction, promote the crystal and carry speed, improve the production efficiency of monocrystalline silicon. The inner guide cylinder is a quartz inner guide cylinder, and because the quartz material has good heat insulation, the heat of the heat insulation layer is difficult to be transferred to the inner guide cylinder, so that the temperature gradient in the axial direction of the inner guide cylinder is further increased. And the quartz material has low impurity content, is not easy to diffuse to a monocrystalline silicon growth area under the high-temperature condition, provides a purer growth environment for the growth of the monocrystalline silicon, prolongs the minority carrier lifetime, and improves the quality of the monocrystalline silicon. In addition, the quartz inner guide cylinder is easy to process, the manufacturing cost is reduced, and the risk that the graphite inner guide cylinder or the molybdenum inner guide cylinder falls and is broken due to insufficient toughness in the prior art is reduced. The support ring is arranged on the inner side of the outer guide cylinder, the support ring is connected with the end part, close to the crucible, of the outer guide cylinder, the end part, close to the crucible, of the inner guide cylinder is arranged on the support ring, the support ring is used for supporting the inner guide cylinder on the outer guide cylinder in the crystal pulling process, the support ring is a graphite support ring, the graphite material still has high strength under the high-temperature condition, is not easy to soften and deform, and can play a good supporting role for the inner guide cylinder.
In one embodiment, the inner guide cylinder comprises a first guide section, a second guide section and a third guide section, the first guide section is close to the crucible and connected with the second guide section, and the second guide section is connected with the third guide section.
In one embodiment, the included angles between the inner wall of the first flow guide section and the inner wall of the third flow guide section and the axis of the inner guide cylinder are respectively 70-80 degrees
In one embodiment, the guide cylinder further comprises a ring sleeve, the ring sleeve is a quartz ring sleeve, the ring sleeve is embedded in the inner side of the support ring and is coaxial with the support ring, and the surface roughness Ra of the ring sleeve is less than or equal to 0.05 μm.
In one embodiment, the side of the ring sleeve far away from the crucible is provided with an end surface inclined towards the axis of the inner guide cylinder, and the included angle formed between the end surface and the axis of the inner guide cylinder is 50-60 degrees.
In one embodiment, a heat shield ring is formed on the outer side of the inner guide cylinder, which is far away from the open end of the crucible, a protection plate is formed on the inner side of the furnace body, the protection plate and the heat shield ring are both made of quartz materials, the protection plate is coaxial with the heat shield ring and the inner guide cylinder, and the open end of the inner guide cylinder, which is far away from the crucible, is lapped on the protection plate.
In one embodiment, the connection part of the protection plate and the heat shield protection ring is seamless, and the connection part of the protection plate and the furnace body is seamless.
In one embodiment, the support ring is provided with an annular gap on a side away from the crucible, and the inner guide cylinder is overlapped on the annular gap.
In one embodiment, the roughness Ra of the inner wall of the inner guide cylinder is less than or equal to 0.05 μm.
A flow guide assembly comprises a crucible, a furnace body and a flow guide cylinder according to any one of the technical schemes, wherein the crucible and the flow guide cylinder are arranged oppositely, and the furnace body is covered on the outer side of the flow guide cylinder and the crucible.
In the flow guide assembly, the furnace body is covered on the outer sides of the flow guide cylinder and the crucible, and the crucible and the flow guide cylinder are arranged oppositely to provide a thermal field environment for the flow guide cylinder and the crucible. Among the above-mentioned water conservancy diversion subassembly, interior draft tube and outer draft tube are both ends open-ended cavity formula structure, and the open end cross-section that the crucible was kept away from to outer draft tube is less than the open end cross-section that the crucible was kept away from to interior draft tube, so that the inside of interior draft tube is formed with the passageway that is used for high temperature protective gas to flow, and interior draft tube is on its axis direction, the cross-section that is close to the crucible open end is less than the cross-section of keeping away from the crucible open end, make high temperature protective gas when through interior draft tube, the gas flow speed accelerates, can take away the crystallization latent heat of crystal growth liquid level top in the crucible fast, increase the ascending temperature gradient of draft tube axis direction, promote the crystal and carry speed, improve the production efficiency of monocrystalline silicon. The inner guide cylinder is a quartz inner guide cylinder, and because the quartz material has good heat insulation, the heat of the heat insulation layer is difficult to be transferred to the inner guide cylinder, so that the temperature gradient in the axial direction of the inner guide cylinder is further increased. And the quartz material has low impurity content, is not easy to diffuse to a monocrystalline silicon growth area under the high-temperature condition, provides a purer growth environment for the growth of the monocrystalline silicon, prolongs the minority carrier lifetime, and improves the quality of the monocrystalline silicon. In addition, the quartz inner guide cylinder is easy to process, the manufacturing cost is reduced, and the risk that the graphite inner guide cylinder or the molybdenum inner guide cylinder falls and is broken due to insufficient toughness in the prior art is reduced. The support ring is arranged on the inner side of the outer guide cylinder, the support ring is connected with the end part, close to the crucible, of the outer guide cylinder, the end part, close to the crucible, of the inner guide cylinder is arranged on the support ring, the support ring is used for supporting the inner guide cylinder on the outer guide cylinder in the crystal pulling process, the support ring is a graphite support ring, the graphite material still has high strength under the high-temperature condition, is not easy to soften and deform, and can play a good supporting role for the inner guide cylinder.
Drawings
Fig. 1 is a cross-sectional view of the whole structure of a draft tube provided by the present invention;
fig. 2 is a cross-sectional view of the whole structure of a diversion assembly provided by the present invention;
fig. 3 is a schematic structural view of a support ring in a draft tube according to the present invention;
fig. 4 is a schematic structural view of a middle ring sleeve of a draft tube provided by the present invention;
fig. 5 is a lifetime graph of monocrystalline silicon minority carriers prepared by the draft tube and the draft assembly provided by the present invention.
Reference numerals:
100. a draft tube;
110. an inner draft tube; 111. a first flow guide section; 112. a second flow guide section; 113. a third flow guide section;
120. an outer draft tube; 130. a support ring; 131. an annular gap; 140. sleeving a ring; 141. an end face;
150. a protection plate; 160. a heat shield grommet;
200. a flow guide assembly;
210. a crucible; 220. a furnace body.
Detailed Description
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will be able to make similar modifications without departing from the spirit and scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
The technical solution provided by the embodiments of the present invention is described below with reference to the accompanying drawings.
As shown in fig. 1 and 2, the utility model provides a draft tube 100, it is inboard to install in furnace body 220 that has crucible 210, draft tube 100 sets up with crucible 210 relatively for monocrystalline silicon's production preparation, this draft tube 100 includes interior draft tube 110, outer draft tube 120 and support ring 130, wherein:
the support ring 130 is disposed inside the outer guide cylinder 120, the support ring 130 is connected to an end of the outer guide cylinder 120 close to the crucible 210, and the support ring 130 is a graphite support ring. The support ring 130 may be disposed inside the outer guide cylinder 120 in a clamping manner, a nesting manner, or the like, so as to facilitate fixing and detaching the support ring 130.
The inner guide cylinder 110 is a cavity structure with two open ends, the end of the inner guide cylinder 110 close to the crucible 210 is arranged on the support ring 130, the inner guide cylinder 110 is in the axial direction of the inner guide cylinder 110, and the section of the inner guide cylinder 110 close to the crucible 210 is smaller than the section of the inner guide cylinder 110 far from the crucible 210. Wherein, interior draft tube 110 can be the cavity formula structure through mould integrated into one piece, also can be after interior draft tube 110 shaping make its shaping be the cavity formula structure through trompil appurtenance, to the concrete shaping mode of interior draft tube 110 the utility model discloses do not do the restriction. The inner baffle cylinder 110 is a quartz inner baffle cylinder 110, and it should be noted that, for the occasion with lower requirements on the production efficiency and quality of the monocrystalline silicon, the inner baffle cylinder 110 may also be a graphite inner baffle cylinder 110 or a molybdenum inner baffle cylinder 110.
The outer draft tube 120 is a cavity structure with two open ends, the outer draft tube 120 covers the outer side of the inner draft tube 110, and the section of the open end of the outer draft tube 120 far away from the crucible 210 is smaller than the section of the open end of the inner draft tube 110 far away from the crucible 210. Wherein, outer draft tube 120 can be the cavity formula structure through mould integrated into one piece, also can make its shaping be the cavity formula structure through trompil appurtenance after outer draft tube 120 shaping, to outer draft tube 120's specific shaping mode the utility model discloses do not limit.
In the above-mentioned draft tube 100, the inner draft tube 110 and the outer draft tube 120 are both cavity type structures with two open ends, and the open end section of the outer draft tube 120 far from the crucible 210 is smaller than the open end section of the inner draft tube 110 far from the crucible 210, so that a channel for flowing high-temperature protective gas is formed inside the inner draft tube 110, and the inner draft tube 110 is in the axis direction, the section close to the open end of the crucible 210 is smaller than the section far from the open end of the crucible 210, so that the gas flow rate is accelerated when the high-temperature protective gas passes through the inner draft tube 110, the latent heat of crystallization above the liquid level of the crystal growth in the crucible 210 can be taken away quickly, the temperature gradient in the axis direction of the inner draft tube 110 is increased, the crystal pulling speed is increased, and the production efficiency of monocrystalline silicon is improved. The inner baffle cylinder 110 is a quartz inner baffle cylinder 110, and since the quartz material has good heat insulation, the heat of the heat insulation layer is difficult to be transferred to the inside of the inner baffle cylinder 110, and the temperature gradient in the axial direction of the inner baffle cylinder 110 is further increased. And the quartz material has low impurity content, is not easy to diffuse to a monocrystalline silicon growth area under the high-temperature condition, provides a purer growth environment for the growth of the monocrystalline silicon, prolongs the minority carrier lifetime, and improves the quality of the monocrystalline silicon. In addition, the quartz inner guide shell 110 is easy to process, the manufacturing cost is reduced, and the risk that the graphite inner guide shell or the molybdenum guide shell falls and is broken due to insufficient toughness in the prior art is reduced. The support ring 130 is sleeved on one side of the inner guide cylinder 110 close to the crucible 210, the support ring 130 is disposed on the inner side of the outer guide cylinder 120, the support ring 130 is connected to the end portion of the outer guide cylinder 120 close to the crucible 210, the end portion of the inner guide cylinder 110 close to the crucible 210 is disposed on the support ring 130, the support ring 130 is used for supporting the inner guide cylinder 110 on the outer guide cylinder 120 in the crystal pulling process, the support ring 130 is a graphite support ring 130, and the graphite material has high strength under a high temperature condition, is not easily softened and deformed, and can perform a good support function on the inner guide cylinder 110.
In order to enrich the structural form of the guide shell 100, in a preferred embodiment, as shown in fig. 1, the inner guide shell 110 includes a first guide section 111, a second guide section 112, and a third guide section 113, the first guide section 111 is close to the crucible 210, the first guide section 111 is connected to the second guide section 112, and the second guide section 112 is connected to the third guide section 113. The first guide section 111, the second guide section 112 and the third guide section 113 may be integrally formed, so as to reduce the manufacturing cost of the inner guide cylinder 110; or the first guide section 111 and the second guide section 112 are connected together in a clamping manner, a nesting manner and the like, and the second guide section 112 and the third guide section 113 are connected together in a clamping manner, a nesting manner and the like, so that the first guide section 111, the second guide section 112 and the third guide section 113 can be conveniently detached, connected and fixed, and the crucible type guide device can adapt to various occasions with different distances between the inner guide cylinder 110 and the crucible 210. It should be noted that the joints of the first flow guiding section 111 and the second flow guiding section 112 and the joints of the second flow guiding section 112 and the third flow guiding section 113 are all smooth transitions, which is beneficial to smooth flow of the gas and maintain stable flow of the gas.
In order to further increase the crystal pulling speed, specifically, as shown in fig. 1 and fig. 2, the included angles formed by the inner wall of the first guide flow section 111 and the inner wall of the third guide flow section 113 and the axis of the inner guide shell 110 are 70-80 °. The flow velocity of the high-temperature protective gas can be accelerated in the crystal pulling process, the latent heat of crystallization above the liquid level of the crystal growth in the crucible 210 can be taken away quickly, the temperature gradient in the axial direction of the inner guide cylinder 110 is increased, the crystal pulling speed is increased, and the production efficiency of the monocrystalline silicon is improved. In a specific arrangement, an included angle between the inner wall of the first flow guide section 111 and the axis of the inner guide cylinder 110 may be one of 70 °, 72 °, 74 °, 76 °, 78 °, and 80 °, and similarly, an included angle between the inner wall of the third flow guide section 113 and the axis of the inner guide cylinder 110 may also be one of 70 °, 72 °, 74 °, 76 °, 78 °, and 80 °. Of course, the included angles between the inner walls of the first guide section 111 and the third guide section 113 and the axis of the inner guide cylinder 110 are not limited to the above values, and may be other values within the range of 70 ° to 80 °. In addition, for the occasion that the production efficiency and the quality requirement of the monocrystalline silicon are not high, the included angles between the inner wall of the first guide section 111 and the inner wall of the third guide section 113 and the axial line of the inner guide cylinder 110 are not limited to the above range values, and can be a numerical value outside the range value of 70-80 degrees. The included angles formed by the inner walls of the first guide section 111 and the third guide section 113 and the axis of the inner guide cylinder 110 are 70-80 degrees, so that the problem that when the included angles formed by the inner walls of the first guide section 111 and the third guide section 113 and the axis of the inner guide cylinder 110 are too small, the gas flow velocity acceleration effect is not obvious, the crystal pulling speed is still slow, and the production efficiency of monocrystalline silicon is influenced can be avoided; the problem that the quality of the monocrystalline silicon is affected by large shaking of the guide cylinder 100 and the monocrystalline silicon in the crystal pulling process due to too high airflow speed when included angles formed by the inner walls of the first guide section 111 and the third guide section 113 and the axis of the inner guide cylinder 110 are large can also be avoided.
In order to realize the connection and fixation of the draft tube 100 and the water-cooling screen (not shown in the figure) and improve the quality of the monocrystalline silicon, in a preferred embodiment, as shown in fig. 1 and 4, the draft tube 100 further comprises a ring sleeve 140, wherein the ring sleeve 140 is a quartz ring sleeve 140, and since the quartz material has a low impurity content and is not easy to diffuse to a monocrystalline silicon growth region under a high temperature condition, a purer environment is provided for the growth of the monocrystalline silicon, the minority carrier lifetime is prolonged, and the quality of the monocrystalline silicon is improved. The ring sleeve 140 is embedded inside the support ring 130, and the ring sleeve 140 is coaxial with the support ring 130, i.e. the outer diameter of the ring sleeve 140 is smaller than or equal to the inner diameter of the support ring 130, when the outer diameter of the ring sleeve 140 is smaller than the inner diameter of the support ring 130, a sealing ring can be arranged on the embedding surface of the ring sleeve 140 and the support ring 130, so that a gap is avoided from being formed on the embedding surface, and the ring sleeve 140 is easy to fall off from the support ring 130 and fails. The surface of the ring sleeve 140 is subjected to a series of surface treatments such as sanding, polishing and the like, so that the roughness Ra of the surface of the ring sleeve 140 is less than or equal to 0.05 mu m, the surface is smooth, the smoothness of the gas flow is facilitated, and the stable flow of the gas is maintained.
In order to further improve the production efficiency and quality of the monocrystalline silicon, specifically, as shown in fig. 1 and 4, the ring sleeve 140 has an end surface 141 inclined toward the axis of the inner guide cylinder 110 on the side away from the crucible 210, and an included angle formed between the end surface 141 and the axis of the inner guide cylinder 110 is 50 ° to 60 °, so that when the high-temperature protective gas enters the monocrystalline silicon growth area through the first guide section 111, the gas flow rate is increased, the crystal pulling speed is further increased, and the production efficiency of the monocrystalline silicon is improved. In a specific arrangement, the included angle between the end surface 141 and the axis of the inner guide shell 110 may be one of 50 °, 52 °, 54 °, 56 °, 58 °, and 60 °, and of course, the included angle between the end surface 141 and the axis of the inner guide shell 110 is not limited to the above-mentioned value, and may also be other values within the range of 50 ° -60 °. In addition, for the occasion that the production efficiency and the quality of the monocrystalline silicon are not high, the included angle between the end surface 141 and the axis of the inner guide cylinder 110 is not limited to the above range value, and can be a value outside the range value of 50-60 degrees. The ring sleeve 140 is provided with an end face 141 which inclines towards the axis of the inner guide cylinder 110 on the side away from the crucible 210, and the included angle formed by the end face 141 and the axis of the inner guide cylinder 110 is 50-60 degrees, so that the problem that the gas flow velocity acceleration effect is not obvious when the included angle formed by the end face 141 and the axis of the inner guide cylinder 110 is too small, the crystal pulling speed is still slow, and the production efficiency of monocrystalline silicon is influenced can be avoided; the problem that the quality of monocrystalline silicon is affected by large shaking of the guide cylinder 100 and monocrystalline silicon in the crystal pulling process due to too high gas flow speed when the included angle formed by the end surface 141 and the axis of the inner guide cylinder 110 is too large can also be avoided.
In order to realize the installation and fixation of the draft tube 100 and the furnace body 220, as shown in fig. 1 and fig. 2, a heat shielding guard ring 160 is formed on the outer side of the inner draft tube 110 away from the opening end of the crucible 210, a protection plate 150 is formed on the inner side of the furnace body 220, and the protection plate 150 and the heat shielding guard ring 160 are both made of quartz material, so that the quartz material has low impurity content and is not easy to diffuse to a monocrystalline silicon growth region under a high temperature condition, a purer environment is provided for monocrystalline silicon growth, the minority carrier lifetime is prolonged, and the quality of monocrystalline silicon is improved. The protection plate 150, the thermal shield ring 160 and the inner guide shell 110 are coaxial, so that a positioning center is provided for the protection plate 150, the thermal shield ring 160 and the inner guide shell 110 in the installation and fixation process, and the installation and fixation of the protection plate, the thermal shield ring 160 and the inner guide shell 110 are facilitated. The opening end of the inner guide shell 110 far away from the crucible 210 is lapped on the protection plate 150, so that the guide shell 100 and the furnace body 220 are installed and fixed.
In order to further improve the quality of the monocrystalline silicon, specifically, no gap is formed at the joint of the protection plate 150 and the heat shield protection ring 160, and no gap is formed at the joint of the protection plate 150 and the furnace body 220, so that impurities outside the thermal field can be prevented from entering the inner guide cylinder 110 and diffusing to the monocrystalline silicon growth area, the monocrystalline silicon growth area is polluted, the minority carrier lifetime is influenced, and the quality of the monocrystalline silicon is reduced. It should be noted that the heat shield ring 160 may be separately overlapped on the protection plate 150, that is, the outer diameter of the heat shield ring 160 is larger than the inner diameter of the protection plate 150, and a sealing ring is disposed at the overlapping position, so that no gap is formed at the joint of the heat shield ring 160 and the protection plate 150, or the heat shield ring 160 and the inner guide tube 110 are integrally formed and then together overlapped on the protection plate 150, and a sealing ring is disposed at the overlapping position, so that no gap is formed at the joint of the heat shield ring 160 and the protection plate 150; the heat shield ring 160 may also be integrally formed with the guard plate 150 through a mold. The protection plate 150 can be fixed on the inner side of the furnace body 220 in the forms of clamping, nesting and the like, and a sealing ring is arranged at the joint of the clamping and/or nesting, so that no gap is formed at the joint of the protection plate 150 and the furnace body 220; when the protection plate 150 and the furnace body 220 are made of the same material, they may be integrally formed by a mold. To heat shield retaining ring 160 and guard plate 150 to and the concrete connection mode of guard plate 150 and furnace body 220 the utility model discloses do not do the restriction, only need satisfy the junction seamless of heat shield retaining ring 160 and guard plate 150, and the junction seamless of guard plate 150 and furnace body 220 can.
In order to enhance the supporting function of the supporting ring 130, in a preferred embodiment, as shown in fig. 3, an annular notch 131 is formed on a side of the supporting ring 130 away from the crucible 210, and the inner guide cylinder 110 is overlapped on the annular notch 131, so that the inner guide cylinder 110 is prevented from shaking off the supporting ring 130 due to too fast gas flow rate during the crystal pulling process, which results in unstable gas flow direction and affects the quality of the monocrystalline silicon. Wherein, annular breach 131 can be set up when support ring 130 shaping through purpose-made mould, also can set up through appurtenance such as electric drill, grinding machine after support ring 130 shaping and form, specific mode of setting up to annular breach 131 the utility model discloses do not do the restriction.
In order to ensure the smooth flowing of the high-temperature shielding gas through the inner baffle cylinder 110, in a preferred embodiment, the inner wall of the inner baffle cylinder 110 may be subjected to a series of surface treatments such as grinding and polishing, so that the roughness Ra of the inner wall of the inner baffle cylinder 110 is less than or equal to 0.05 μm, and the smooth inner wall is favorable for the smooth flowing of the high-temperature shielding gas through the inner baffle cylinder 110, thereby maintaining the stable flowing of the high-temperature shielding gas.
In addition, as shown in fig. 1 and fig. 2, the present invention further provides a guiding assembly 200, wherein the guiding assembly 200 includes a crucible 210 and a furnace body 220, and further includes the guiding cylinder 100 according to any one of the above technical solutions, the crucible 210 is disposed opposite to the guiding cylinder 100, and the furnace body 220 covers the guiding cylinder 100 and the crucible 210.
In the above-mentioned guide assembly 200, the furnace body 220 is covered outside the guide cylinder 100 and the crucible 210, and provides a thermal field environment for the guide cylinder 100 and the crucible 210. In the above flow guide assembly 200, the inner guide cylinder 110 and the outer guide cylinder 120 are both of a cavity type structure with two open ends, and the open end section of the outer guide cylinder 120 far away from the crucible 210 is smaller than the open end section of the inner guide cylinder 110 far away from the crucible 210, so that a channel for flowing high-temperature protective gas is formed inside the inner guide cylinder 110, and the inner guide cylinder 110 is in the axis direction, the section close to the open end of the crucible 210 is smaller than the section far away from the open end of the crucible 210, so that the gas flow rate is increased when the high-temperature protective gas passes through the inner guide cylinder 110, the latent heat of crystallization above the liquid level of the crystal growth in the crucible 210 can be taken away quickly, the temperature gradient in the axis direction of the inner guide cylinder 110 is increased, the crystal pulling speed is increased, and the production efficiency of monocrystalline silicon is improved. The inner baffle cylinder 110 is a quartz inner baffle cylinder 110, and since the quartz material has good heat insulation, the heat of the heat insulation layer is difficult to be transferred to the inside of the inner baffle cylinder 110, and the temperature gradient in the axial direction of the inner baffle cylinder 110 is further increased. And the quartz material has low impurity content, is not easy to diffuse to a monocrystalline silicon growth area under the high-temperature condition, provides a purer growth environment for the growth of the monocrystalline silicon, prolongs the minority carrier lifetime, and improves the quality of the monocrystalline silicon. In addition, the quartz inner guide shell 110 is easy to process, the manufacturing cost is reduced, and the risk that the graphite inner guide shell or the molybdenum guide shell falls and is broken due to insufficient toughness in the prior art is reduced. The support ring 130 is disposed inside the outer baffle cylinder 120, the support ring 130 is connected to an end of the outer baffle cylinder 120 close to the crucible 210, an end of the inner baffle cylinder 110 close to the crucible 210 is disposed on the support ring 130, the support ring 130 is used to support the inner baffle cylinder 110 on the outer baffle cylinder 120 during the crystal pulling process, the support ring 130 is a graphite support ring 130, and the graphite material has high strength under high temperature conditions, is not easily softened and deformed, and can provide a good support effect for the inner baffle cylinder 110.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. The utility model provides a draft tube, install in the furnace body inboard that has the crucible, and with the crucible sets up relatively, its characterized in that, including interior draft tube, outer draft tube and support ring, wherein:
the support ring is arranged on the inner side of the outer guide cylinder and is connected with the end part, close to the crucible, of the outer guide cylinder, and the support ring is a graphite support ring;
the inner guide cylinder is of a cavity type structure with openings at two ends, the end part close to the crucible is arranged on the support ring, the section of the opening end close to the crucible is smaller than that of the opening end far away from the crucible in the axial direction of the inner guide cylinder, and the inner guide cylinder is a quartz inner guide cylinder;
the outer guide cylinder is of a cavity type structure with openings at two ends, the outer guide cylinder is covered on the outer side of the inner guide cylinder, and the section of the opening end of the outer guide cylinder, which is far away from the crucible, is smaller than the section of the opening end of the inner guide cylinder, which is far away from the crucible.
2. The draft tube of claim 1, wherein the inner draft tube comprises a first draft section, a second draft section and a third draft section, the first draft section is close to the crucible and connected with the second draft section, and the second draft section is connected with the third draft section.
3. The guide shell according to claim 2, wherein the included angles between the inner wall of the first guide section and the inner wall of the third guide section and the axis of the inner guide shell are respectively 70-80 °.
4. The draft tube according to claim 1, further comprising a ring sleeve, wherein the ring sleeve is a quartz ring sleeve, and is embedded inside the support ring and coaxial with the support ring, and the surface roughness Ra of the ring sleeve is less than or equal to 0.05 μm.
5. The guide shell according to claim 4, wherein the side of the ring sleeve away from the crucible is provided with an end surface inclined towards the axis of the inner guide shell, and the included angle formed between the end surface and the axis of the inner guide shell is 50-60 degrees.
6. The draft tube according to claim 1, wherein a heat shielding protective ring is formed on the outer side of the inner draft tube away from the open end of the crucible, a protective plate is formed on the inner side of the furnace body, the protective plate and the heat shielding protective ring are both made of quartz materials, the protective plate is coaxial with the heat shielding protective ring and the inner draft tube, and the open end of the inner draft tube away from the crucible is lapped on the protective plate.
7. The draft tube according to claim 6, wherein the connection between the protection plate and the heat shield ring is seamless, and the connection between the protection plate and the furnace body is seamless.
8. The guide shell according to claim 1, wherein the support ring is provided with an annular gap on a side remote from the crucible, and the inner guide shell overlaps the annular gap.
9. The guide shell of claim 1, wherein the inner surface roughness Ra of the inner guide shell is less than or equal to 0.05 μm.
10. A flow guide assembly comprises a crucible and a furnace body, and is characterized by further comprising a flow guide cylinder according to any one of claims 1 to 9, wherein the crucible is arranged opposite to the flow guide cylinder, and the furnace body is covered on the outer sides of the flow guide cylinder and the crucible.
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| CN202120446177.XU CN214736204U (en) | 2021-03-02 | 2021-03-02 | Guide cylinder and guide assembly |
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| CN202120446177.XU CN214736204U (en) | 2021-03-02 | 2021-03-02 | Guide cylinder and guide assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114289408A (en) * | 2021-11-23 | 2022-04-08 | 浙江晶盛机电股份有限公司 | Main shaft oxide cleaning device of hard shaft single crystal furnace |
| CN115233291A (en) * | 2022-06-29 | 2022-10-25 | 徐州鑫晶半导体科技有限公司 | Flow guide assembly, crystal growth furnace with flow guide assembly and crystal growth method |
| CN117231525A (en) * | 2023-11-02 | 2023-12-15 | 江苏新凯晟机械设备有限公司 | Centrifugal air compressor with flow guiding body structure |
| CN117885181A (en) * | 2024-03-14 | 2024-04-16 | 施密特钢轨技术（昆山）有限公司 | Sand water conservancy diversion subassembly is penetrated to crucible |
| CN117885181B (en) * | 2024-03-14 | 2024-05-31 | 施密特钢轨技术（昆山）有限公司 | Sand water conservancy diversion subassembly is penetrated to crucible |
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2021
- 2021-03-02 CN CN202120446177.XU patent/CN214736204U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114289408A (en) * | 2021-11-23 | 2022-04-08 | 浙江晶盛机电股份有限公司 | Main shaft oxide cleaning device of hard shaft single crystal furnace |
| CN114289408B (en) * | 2021-11-23 | 2022-11-22 | 浙江晶盛机电股份有限公司 | Main shaft oxide cleaning device of hard shaft single crystal furnace |
| CN115233291A (en) * | 2022-06-29 | 2022-10-25 | 徐州鑫晶半导体科技有限公司 | Flow guide assembly, crystal growth furnace with flow guide assembly and crystal growth method |
| CN115233291B (en) * | 2022-06-29 | 2023-08-04 | 中环领先(徐州)半导体材料有限公司 | Flow guide assembly, crystal growth furnace with flow guide assembly and crystal growth method |
| CN117231525A (en) * | 2023-11-02 | 2023-12-15 | 江苏新凯晟机械设备有限公司 | Centrifugal air compressor with flow guiding body structure |
| CN117885181A (en) * | 2024-03-14 | 2024-04-16 | 施密特钢轨技术（昆山）有限公司 | Sand water conservancy diversion subassembly is penetrated to crucible |
| CN117885181B (en) * | 2024-03-14 | 2024-05-31 | 施密特钢轨技术（昆山）有限公司 | Sand water conservancy diversion subassembly is penetrated to crucible |
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