CN212392231U - Part packaging shell is pasted to cermet table - Google Patents

Part packaging shell is pasted to cermet table Download PDF

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Publication number
CN212392231U
CN212392231U CN202021249147.1U CN202021249147U CN212392231U CN 212392231 U CN212392231 U CN 212392231U CN 202021249147 U CN202021249147 U CN 202021249147U CN 212392231 U CN212392231 U CN 212392231U
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China
Prior art keywords
hole
lead
insulating seat
plate
base
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CN202021249147.1U
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Chinese (zh)
Inventor
石仙宏
李应明
柯栋栋
罗显全
杨晓东
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China Zhenhua Group Yongguang Electronics Coltd
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China Zhenhua Group Yongguang Electronics Coltd
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Abstract

The utility model provides a metal ceramic surface-mounted part packaging shell, which comprises an insulating seat; the LED module comprises an insulating seat, a cover plate, a base plate, a lead hole and a polar plate, wherein the insulating seat is provided with a mounting through hole of a diode core in the middle, the cover plate and the base plate are respectively mounted at the upper end and the lower end of the insulating seat, the insulating seat is further provided with the lead hole, and the polar plate is mounted at the lower end of the lead hole. The utility model discloses an adopt the copper post to be connected with the electrode, satisfy the high-power, heavy current operation requirement of product, the copper post is installed in pottery, compromises ceramic strength and surge ability.

Description

Part packaging shell is pasted to cermet table
Technical Field
The utility model relates to a cermet table pastes part encapsulation shell.
Background
The amount of the diodes in the circuit is large, and is few, and is dozens or even hundreds, so that the amount of the diodes occupies a large space of the circuit board, which is not beneficial to the integration and miniaturization of the product; the transient voltage suppression diode with the peak pulse power of 15KW or below needs to use a heat sink to improve the capability of absorbing the pulse power, and the traditional transient voltage suppression diode with the peak pulse power of 15KW or below usually uses metal axial packaging, occupies a large space and is not beneficial to the design of a circuit board circuit.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides a cermet table pastes part packaging shell.
The utility model discloses a following technical scheme can realize.
The utility model provides a metal ceramic surface-mounted part packaging shell, which comprises an insulating seat; the LED module comprises an insulating seat, a cover plate, a base plate, a lead hole and a polar plate, wherein the insulating seat is provided with a mounting through hole of a diode core in the middle, the cover plate and the base plate are respectively mounted at the upper end and the lower end of the insulating seat, the insulating seat is further provided with the lead hole, and the polar plate is mounted at the lower end of the lead hole.
The insulating seat comprises a base, a mounting table and chip mounting holes, the base is arranged on the edge of the insulating seat, the mounting table is arranged in the middle of the insulating seat and is higher than the base, the chip mounting holes are machined in the middle of the mounting table, and the lead holes are machined in the edge of the mounting table.
And a lead is arranged in the lead hole and extends out of the lower end of the insulating base to be connected with the polar plate.
A cavity is processed in the cover plate.
The cover plate is made of ceramic.
The bottom plate and the polar plate are made of conductive materials.
The bottom plate is in close contact with the edge of the chip mounting hole.
The beneficial effects of the utility model reside in that: the copper column is connected with the electrode, so that the requirements of high-power and high-current use of the product are met, and the copper column is arranged in the ceramic, so that the ceramic strength and the surge capacity are considered.
Drawings
Fig. 1 is a schematic structural diagram of the present invention;
FIG. 2 is a schematic structural view of the insulating base of the present invention;
fig. 3 is a schematic view of a package structure according to an embodiment of the present invention;
in the figure: 1-insulating base, 11-base, 12-mounting table, chip mounting hole-chip mounting hole, 14-lead hole, 2-cover plate, 3-bottom plate, 4-polar plate, 5-lead, 6-chip, 61-chamfer, 7-connecting bridge, 8-electrode plate.
Detailed Description
The technical solution of the present invention is further described below, but the scope of the claimed invention is not limited to the described.
A kind of metal ceramic surface-mounted part encapsulates the outer cover, including the insulating seat 1; the middle of the insulating base 1 is provided with a mounting through hole of a diode core, the upper end and the lower end of the insulating base 1 are respectively provided with the cover plate 2 and the bottom plate 3, the insulating base 1 is also provided with a lead hole 14, and the lower end of the lead hole 14 is provided with the pole plate 4.
Insulating seat 1 includes base 11, mount table 12, chip mounting hole, and base 11 sets up at insulating seat 1 edge, and mount table 12 sets up at insulating seat 1 middle part and highly is greater than base 11, and chip mounting hole processing is at mount table 12 middle parts, and pin hole 14 processing is at mount table 12 edges.
And a lead 5 is arranged in the lead hole 14, and the lead 5 extends out of the lower end of the insulating base 1 and is connected with the polar plate 4.
A cavity is processed in the cover plate 2.
The cover plate 2 is made of ceramic.
The bottom plate 3 and the polar plate 4 are made of conductive materials.
The bottom plate 3 is in close contact with the edge of the chip mounting hole.
One electrode is a part substrate, the other electrode is led out to the pin by using 5 copper cylinders with the diameter of 0.5mm, and the lead punches the ceramic to take the ceramic strength and surge capacity into consideration. At present, the metal ceramic surface-mounted structural part is not available at home and abroad.
The utility model discloses a cermet paster packaging structure for accord with user's circuit operation requirement, designs big polar plate and the little polar plate of boss. The structure is shown in fig. 1, the external dimension of the part is length × width × height ═ 13.65mm × 11mm × 3.35mm, the size of the chip mounting area is 8.5mm × 8.5mm, the size of the large mounting pin is 8.5mm × 8.5mm, the size of the small mounting pin is 5mm × 1.7mm, and the part can bear 1000A surge current (pulse width 8.3 ms).
The substrate, the cover plate and the insulating base are packaged in a high-reliability air-tightness manner, and the high-power transient voltage suppressor diode, the rectifier diode, the voltage stabilizing diode and the Schottky diode can be widely used.
Example (b): the structure is used for packaging the SMD-1E 15KW transient voltage suppression diode and comprises an insulating seat; the chip is installed in the insulating seat, two end faces of the chip are respectively and fixedly connected with an electrode plate, the two electrode plates are respectively connected with the first pin and the second pin, the first pin is sealed at the lower end of the insulating seat, and the upper end of the insulating seat is sealed through the cover plate.
The chip bonding pad has the maximum size of 8.5mm multiplied by 8.5mm, and the gap distance of the product is required to be ensured, so that the chip is designed to have the maximum size of 8mm multiplied by 8 mm. In the area, the development index can be realized by using the commonly used copper heat sink, but the requirement of product temperature cycle (-55-150 ℃ and 500 times) cannot be met due to the fact that the difference between copper (the thermal expansion coefficient is 18 multiplied by 10 < -6 >/DEG C, and the thermal conduction coefficient is 380w/m.k) and silicon (the thermal expansion coefficient is 3.5 multiplied by 10 < -6 >/DEG C); the peak pulse power is far less than 15KW when molybdenum is used. In order to balance the requirement of peak pulse power of 15KW and thermal matching, a copper-molybdenum-copper (expansion coefficient of 7.8 multiplied by 10 < -6 >/DEG C, heat conduction coefficient of 240w/m.k) material is used as a transient voltage suppression diode heat sink, and heat sinks are used on both sides of a product chip to improve the heat absorption capacity. Because copper, molybdenum and copper are formed by punching, the surface is not very flat, the traditional wedge bonding mode cannot be adopted, and the beam lead is designed and is connected by brazing.
The electrode plate on the lower end face of the chip is directly fixedly connected with the chip, and the electrode plate on the upper end face of the chip is connected with the second pin through a lead.
The lead is a bridge lead.
The lead comprises a first connecting sheet, a connecting bridge and a second connecting sheet, the first connecting sheet is fixedly connected with the chip, the second connecting sheet is connected with the second pin through a wire, and the first connecting sheet and the second connecting sheet are connected through the connecting bridge.
The top end of the connecting bridge is a plane and the height of the connecting bridge is greater than that of the first connecting sheet or the second connecting sheet.
The wire is a plurality of copper columns which are equidistant and parallel to each other, and the copper columns are sequentially connected between the second connecting sheet and the second pin along the length direction of the second connecting sheet.
The second pin is arranged in a wire hole, and the wire hole is arranged on a supporting table at the bottom of the inner wall of the insulating base.
The edge of the first pin is fixedly connected to the inner edge of the support platform.
The top end of the side wall of the insulating base and the top end of the connecting bridge are on the same horizontal line, and a groove is formed in the middle of the cover plate to prevent the middle of the cover plate from contacting with the connecting bridge.
And a chamfer is processed on the edge of the lower end face of the chip.
The peak pulse power of the packaged transient voltage suppressor diode product is 15KW or below (the pulse waveform is 10/1000 mus), the forward direction under 500A is lower than 1.65V, the static electricity is prevented from being 8KV, a single chip is used, the volume is 30% smaller than that of the traditional metal axial product, the bearable peak pulse current reaches 500A (the pulse waveform is 10/1000 mus), a ceramic patch packaging form is adopted, and the thermal resistance is as low as 0.3K/W.

Claims (7)

1. The utility model provides a cermet table pastes part encapsulation shell, includes insulator seat (1), its characterized in that: the diode chip mounting structure is characterized in that a mounting through hole of a diode core is processed in the middle of the insulating base (1), the upper end and the lower end of the insulating base (1) are respectively provided with the cover plate (2) and the bottom plate (3), the insulating base (1) is further processed with the lead hole (14), and the lower end of the lead hole (14) is provided with the pole plate (4).
2. The cermet surface mount component package of claim 1, wherein: insulating seat (1) includes base (11), mount table (12), chip mounting hole, and base (11) set up at insulating seat (1) edge, and mount table (12) set up at insulating seat (1) middle part and highly be greater than base (11), and chip mounting hole processing is at mount table (12) middle part, and pin hole (14) processing is at mount table (12) edge.
3. The cermet surface mount component package of claim 1, wherein: and a lead (5) is arranged in the lead hole (14), and the lead (5) extends out of the lower end of the insulating base (1) and is connected with the polar plate (4).
4. The cermet surface mount component package of claim 1, wherein: a cavity is processed in the cover plate (2).
5. The cermet surface mount component package of claim 1, wherein: the cover plate (2) is made of ceramic.
6. The cermet surface mount component package of claim 1, wherein: the bottom plate (3) and the polar plate (4) are made of conductive materials.
7. The cermet surface mount component package of claim 1, wherein: the bottom plate (3) is in close contact with the edge of the chip mounting hole.
CN202021249147.1U 2020-06-30 2020-06-30 Part packaging shell is pasted to cermet table Active CN212392231U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202021249147.1U CN212392231U (en) 2020-06-30 2020-06-30 Part packaging shell is pasted to cermet table

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202021249147.1U CN212392231U (en) 2020-06-30 2020-06-30 Part packaging shell is pasted to cermet table

Publications (1)

Publication Number Publication Date
CN212392231U true CN212392231U (en) 2021-01-22

Family

ID=74255783

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202021249147.1U Active CN212392231U (en) 2020-06-30 2020-06-30 Part packaging shell is pasted to cermet table

Country Status (1)

Country Link
CN (1) CN212392231U (en)

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