CN212322956U - Reaction chamber of horizontal semiconductor process furnace and horizontal semiconductor process furnace - Google Patents
Reaction chamber of horizontal semiconductor process furnace and horizontal semiconductor process furnace Download PDFInfo
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- CN212322956U CN212322956U CN202021018542.9U CN202021018542U CN212322956U CN 212322956 U CN212322956 U CN 212322956U CN 202021018542 U CN202021018542 U CN 202021018542U CN 212322956 U CN212322956 U CN 212322956U
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The utility model provides a reaction cavity of a horizontal semiconductor process furnace and the horizontal semiconductor process furnace comprising the reaction cavity. The reaction chamber of the horizontal semiconductor process furnace comprises an air inlet, an air exhaust hole and a uniform flow plate assembly, wherein the uniform flow plate assembly is arranged on a rear furnace door of the reaction chamber and shields the air exhaust hole on the rear furnace door; the flow homogenizing plate assembly comprises one or at least two flow homogenizing plates, and a plurality of flow homogenizing small holes are formed in the flow homogenizing plates. The uniform flow plate component can prolong the retention time of the process gas in the reaction chamber, change the flow direction of the process gas, ensure that the process gas is fully contacted and reacted with the silicon wafer, improve the uniformity of the process gas in the reaction chamber and ensure that the film thickness of each point on the silicon wafer is more uniform.
Description
Technical Field
The utility model relates to a semiconductor equipment field, concretely relates to horizontal semiconductor process furnace's reaction cavity and contain this reaction cavity's horizontal semiconductor process furnace.
Background
With the development of the photovoltaic industry, the requirements on the performance of the solar cell are increasingly increased. When the solar cell is prepared, a silicon wafer is required to be placed in a reaction chamber, and a plurality of process processes are carried out in a high-temperature environment (400-1000 ℃). Before the process is carried out, the quartz boat loaded with the silicon wafer automatically enters the reaction chamber through the cantilever push-pull boat, then the reaction chamber is vacuumized, hot oxygen is introduced after the temperature is returned, the pressure is regulated after the reaction chamber is vacuumized again, and atoms or molecules of process gas are deposited on the surface of the silicon wafer at high temperature to form a film. After the process is finished, the quartz boat is automatically taken out from the reaction chamber through the cantilever push-pull boat, and the silicon wafers in the quartz boat are grabbed by workers or an automatic wafer guide machine. When the silicon wafer reacts with the process gas in the reaction chamber, the contact area and reaction rate of the process gas and the silicon wafer affect the final process result.
The solar cell is prepared by a horizontal LPCVD reaction chamber. Fig. 1 shows a schematic structural diagram of a conventional horizontal LPCVD reaction chamber, which includes a chamber 1, a quartz boat 2, a dispersion tube 3, an exhaust port 4, and an air inlet flange 5. When the silicon wafer is reacted in the reaction chamber, the process gas enters the chamber 1 through the gas inlet flange 5 and the dispersion pipe 3, and the process gas is deposited on the surface of the silicon wafer at high temperature to form a film.
1200 silicon wafers are generally inserted on one quartz boat of a single horizontal LPCVD reaction chamber in the photovoltaic industry at present. When the reaction chamber works, the process gas enters the cavity 1 through the gas inlet flange 5 and the dispersion pipe 3, and simultaneously, the external dry pump extracts the gas through the pumping hole 4. Figure 2 shows the process gas flow direction in a conventional horizontal LPCVD reaction chamber. Because the silicon wafers on the quartz boat 2 occupy most of the area of the upper part of the reaction chamber, most of the process gas is pumped away by the external dry pump through the lower part of the reaction chamber, and particularly, most of the process gas entering the reaction chamber through the dispersion pipe 3 can be quickly pumped away through the pumping hole 4, so that the upper part of the silicon wafer is not fully contacted with the process gas, and the thickness of the silicon wafer is uneven.
Therefore, a technical solution is desired to improve the uniformity of the process gas inside the reaction chamber, so that the silicon wafer can be sufficiently contacted with the process gas, and the film formation uniformity is improved.
The information disclosed in this background section of the invention is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information constitutes prior art already known to a person skilled in the art.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a reaction cavity of horizontal semiconductor process furnace to improve the inside process gas's of reaction cavity homogeneity.
The utility model discloses an aspect provides a reaction chamber of horizontal semiconductor process furnace, including air inlet and extraction opening, still include even flow plate subassembly, even flow plate subassembly set up in the back furnace gate of reaction chamber, and shelter from being located the extraction opening on the back furnace gate; the flow homogenizing plate assembly comprises one or at least two flow homogenizing plates, and a plurality of flow homogenizing small holes are formed in the flow homogenizing plates.
Preferably, the uniform flow plate is further provided with uniform flow large holes, and the pore diameter of the uniform flow large holes is larger than that of the uniform flow small holes; and the sum of the area of the uniform flow large holes and the area of the plurality of uniform flow small holes is larger than the area of the pumping hole.
Preferably, the reaction chamber further comprises a dispersion pipe, and the dispersion pipe is arranged at the lower part of the reaction chamber and used for introducing the process gas into the reaction chamber.
Preferably, the bottom of the flow equalizing plate is provided with an avoiding groove allowing the dispersion pipe to pass through.
Preferably, the at least two flow homogenizing plates are arranged in parallel and at intervals.
Preferably, the reaction chamber further comprises a connecting assembly for connecting the at least two flow homogenizing plates, the connecting assembly comprising a screw, a nut and a spacer; the spacer bush is a hollow loop bar which is arranged on the at least two flow equalizing plates in a penetrating way and is used for connecting the at least two flow equalizing plates;
the screw rod set up in the tip of spacer, another tip of spacer has cup jointed the nut, the both ends of screw rod all are provided with the screw thread, the one end of screw rod with the spacer is connected, the other end of screw rod fixed set up in on the back furnace gate of reaction chamber.
Preferably, the flow equalizing plate is further provided with a mounting hole for mounting the connecting assembly on the flow equalizing plate.
Preferably, the diameters of the plurality of uniform flow small holes are the same, and the uniform flow small holes are uniformly distributed in the upper area of the surface of the uniform flow plate; the uniform flow big holes are arranged in the upper area of the surface of the uniform flow plate.
Preferably, the uniform flow small holes on the at least two uniform flow plates are arranged in alignment with each other, and the uniform flow large holes on the at least two uniform flow plates are arranged in alignment with each other.
The utility model discloses another aspect provides a horizontal semiconductor process furnace, include reaction chamber.
The beneficial effects of the utility model reside in that: the uniform flow plate assembly is arranged on a rear furnace door of the reaction chamber and can shield the air suction opening. Because the pressure difference exists between the flow-equalizing small holes on the flow-equalizing plate and the pumping hole, most of the process gas can only pass through the flow-equalizing small holes on the flow-equalizing plate, thereby prolonging the retention time of the process gas in the reaction chamber and leading the process gas to be fully contacted and reacted with the silicon wafer. In addition, the flow-equalizing holes arranged on the flow-equalizing plate can change the flow direction of the process gas, so that at least a part of the process gas flows to the upper part of the reaction chamber, the uniformity of the process gas in the reaction chamber is improved, and the film thickness of each point on the silicon wafer is more uniform.
The apparatus of the present invention has other features and advantages which will be apparent from or are set forth in detail in the accompanying drawings and the following detailed description, which are incorporated herein, and which together serve to explain certain principles of the invention.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments of the present invention with reference to the attached drawings, in which like reference numerals generally represent like parts in exemplary embodiments of the present invention.
FIG. 1 is a schematic view of a conventional horizontal LPCVD reaction chamber;
FIG. 2 shows the flow of process gases within a conventional horizontal LPCVD reaction chamber;
fig. 3 shows a front view of a flow distribution plate assembly of a reaction chamber of a horizontal semiconductor process furnace according to the present invention;
figure 4 shows a partial side view of an even flow plate assembly of a reaction chamber of a horizontal semiconductor process furnace according to the present invention;
FIG. 5 is a schematic view showing the installation position of the flow equalizing plate assembly of the reaction chamber of the horizontal semiconductor process furnace according to the present invention;
FIG. 6 shows a front view of the installation of the flow equalizer assembly of the reaction chamber of the horizontal semiconductor process furnace according to the present invention;
fig. 7 shows an installation side view of a flow distribution plate assembly of a reaction chamber of a horizontal semiconductor process furnace according to the present invention;
fig. 8 shows the process gas flow direction in the reaction chamber of the horizontal semiconductor process furnace according to the present invention.
Description of reference numerals:
the device comprises a cavity 1, a quartz boat 2, a dispersion tube 3, an air suction port 4, an air inlet flange 5, a uniform flow plate 6, a spacer sleeve 7, a screw rod 8, a nut 9, a uniform flow plate component 10, a uniform flow small hole 11, a dodging groove 12, a rear furnace door 13 and a uniform flow large hole 14.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. While the preferred embodiments of the present invention have been illustrated in the accompanying drawings, it is to be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
In the description of the present invention, it is to be understood that the meaning of "a plurality" is at least two, such as two, three, etc., unless explicitly specified otherwise.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship indicated based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "secured" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral part; may be mechanically coupled, may be electrically coupled or may be in communication with each other; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
The utility model provides a reaction chamber of a horizontal semiconductor process furnace, which comprises an air inlet, an air exhaust hole and a flow equalizing plate component, wherein the flow equalizing plate component is arranged on a rear furnace door of the reaction chamber and shields the air exhaust hole on the rear furnace door; the flow homogenizing plate assembly comprises one or at least two flow homogenizing plates, and a plurality of flow homogenizing small holes are formed in the flow homogenizing plates.
The uniform flow plate assembly is arranged on a rear furnace door of the reaction chamber and can shield the air suction opening. Because the pressure difference exists between the uniform flow small holes on the uniform flow plate and the extraction opening, the process gas can only pass through the uniform flow small holes on the uniform flow plate, thereby prolonging the retention time of the process gas in the reaction chamber and leading the process gas to be fully contacted and reacted with the silicon wafer. In addition, the flow-equalizing holes arranged on the flow-equalizing plate can change the flow direction of the process gas, so that at least a part of the process gas flows to the upper part of the reaction chamber, thereby improving the uniformity of the process gas in the reaction chamber and enabling the film thickness of each point on the silicon wafer to be more uniform.
Fig. 3 and fig. 4 show respectively according to the utility model discloses a main view and local side view of the even flow plate subassembly of the reaction chamber of horizontal semiconductor process furnace, fig. 5 shows according to the utility model discloses a mounting position schematic diagram of the even flow plate subassembly of the reaction chamber of horizontal semiconductor process furnace, fig. 6 and fig. 7 show respectively according to the utility model discloses an installation main view and installation side view of the even flow plate subassembly of the reaction chamber of horizontal semiconductor process furnace, fig. 8 shows according to the utility model discloses a process gas flow direction in the reaction chamber of horizontal semiconductor process furnace.
Referring to fig. 3 to 7, the reaction chamber of the horizontal semiconductor process furnace includes an air inlet and an air exhaust port 4, and further includes a uniform flow plate assembly 10, wherein the uniform flow plate assembly 10 is disposed on a rear furnace door 13 of the reaction chamber and shields the air exhaust port 4 on the rear furnace door 13; the flow equalizing plate assembly 10 comprises one or at least two flow equalizing plates 6, and a plurality of flow equalizing holes 11 are formed in the flow equalizing plates 6.
Wherein the flow homogenizing plate 6 is round, or the flow homogenizing plate 6 can also be square, and the shape of the flow homogenizing plate 6 is preferably adapted to the shape of the rear oven door 13.
In the present embodiment, the flow distribution plate assembly 10 includes two flow distribution plates 6, and the number of the flow distribution plates 6 can be changed according to actual needs. It should be noted that when there is one flow equalizing plate 6, the flow equalizing effect cannot be optimized, and when there are too many flow equalizing plates 6, the air pumping effect is affected, and preferably there are two flow equalizing plates 6. When the number of the flow equalizing plates 6 is at least two, the at least two flow equalizing plates 6 are arranged in parallel and at intervals.
In the embodiment, the uniform flow plate 6 is further provided with a uniform flow big hole 14, the uniform flow small hole 6 and the uniform flow big hole 14 are both round holes, and the aperture of the uniform flow big hole 14 is larger than that of the uniform flow small hole 6; the sum of the area of the big uniform flow holes 14 and the area of the small uniform flow holes 6 is larger than the area of the air suction opening 4.
The purpose of providing the large diameter flow equalizing holes 14 is to increase the air flow area of the flow equalizing plate 6, and thus to improve the air flow performance of the flow equalizing plate 6. The sum of the area of the big uniform flow holes 14 and the area of the small uniform flow holes 6 is larger than the area of the air pumping opening 4, so that the air pumping effect of the air pumping opening 4 can be prevented from being influenced.
The reaction chamber further comprises a dispersion pipe 3, and the dispersion pipe 3 is arranged at the lower part of the reaction chamber and used for introducing process gas into the reaction chamber. Correspondingly, the bottom of the flow equalizing plate 6 is provided with an avoiding groove 12 for allowing the dispersion pipe 3 to pass through, so as to facilitate installation.
The reaction chamber also comprises a connecting component for connecting at least two flow equalizing plates 6, wherein the connecting component comprises a screw 8, a nut 9 and a spacer 7; the spacer 7 is a hollow loop bar penetrating through the at least two flow equalizing plates 6 and is used for connecting the at least two flow equalizing plates 6;
the screw rod 8 is arranged at one end of the spacer 7, the nut 9 is sleeved at the other end of the spacer 7, threads are arranged at two ends of the screw rod 8, one end of the screw rod 8 is connected with the spacer 7, and the other end of the screw rod 8 is fixedly arranged on a rear furnace door 13 of the reaction chamber.
Wherein, the outer contour of the spacer 7 can be round or square.
Preferably, the number of the connecting assemblies is plural, and the connecting assemblies are uniformly arranged along the edge of the flow distribution plate 6 to stably connect at least two flow distribution plates 6 and stably fix the flow distribution plate assembly 10 to the rear oven door 13. In the present embodiment, the number of the connecting members is three.
The uniform flow plate 6 is also provided with a mounting hole for mounting the connecting assembly on the uniform flow plate 6.
Preferably, the diameters of the plurality of uniform flow small holes 11 are the same, and the uniform flow small holes are uniformly distributed in the upper area of the surface of the uniform flow plate 6; the large uniform flow holes 14 are arranged in the upper area of the surface of the uniform flow plate 6.
The small uniform flow holes 11 and the large uniform flow holes 14 are formed in the upper portion of the surface of the uniform flow plate 6, so that most of process gas can flow to the upper portion of the reaction chamber, and particularly, the gas inlet distribution of the dispersion pipe 3 can be improved, the circulation direction of the process gas in the reaction chamber is greatly improved, the contact time and the reaction time of the upper portion of the silicon wafer and the process gas are increased, and the film thickness of each point on the silicon wafer is more uniform.
Preferably, the small uniform flow holes 11 on the two uniform flow plates 6 are aligned or staggered with each other, the large uniform flow holes on the two uniform flow plates are aligned or staggered with each other, and when the small uniform flow holes 11 and the large uniform flow holes 14 on the two uniform flow plates 6 are aligned with each other, the air suction effect is better.
The material of the uniform flow plate 6 and the spacer 7 can be stainless steel.
Referring to fig. 5 to 8, when the reaction chamber is operated, the process gas is introduced through the gas inlet flange 5 provided at the front end of the reaction chamber and the dispersion pipe 3 extending into the reaction chamber, and the external dry pump is used for pumping gas through the pumping hole 4 provided in the rear door 13. The uniform flow plate assembly 10 is arranged on the rear furnace door 13 and shields the air pumping opening 4, and most of the process gas can only flow through the uniform flow small holes 11 and the uniform flow big holes 14 because of the pressure difference between the uniform flow small holes 11 and the uniform flow big holes 14 on the uniform flow plate 6 and the air pumping opening 4. Because the small flow equalizing holes 11 and the large flow equalizing holes 14 are arranged at the upper part of the flow equalizing plate 6, most of the process gas flows to the upper part of the reaction chamber, and the gas inlet distribution of the dispersion pipe 3 can be particularly improved. The utility model discloses a uniform flow board can improve process gas circulation direction and circulation speed greatly, increases silicon chip upper portion and process gas's contact time and reaction time for the film thickness of each point on the silicon chip is more even.
The utility model also provides a horizontal semiconductor technology stove, include reaction chamber.
While various embodiments of the present invention have been described above, the above description is intended to be illustrative, not exhaustive, and not limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen in order to best explain the principles of the embodiments, the practical application, or improvements made to the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Claims (10)
1. The reaction chamber of the horizontal semiconductor process furnace comprises an air inlet and an air extraction opening, and is characterized by further comprising a flow equalizing plate assembly, wherein the flow equalizing plate assembly is arranged on a rear furnace door of the reaction chamber and shields the air extraction opening on the rear furnace door; the flow homogenizing plate assembly comprises one or at least two flow homogenizing plates, and a plurality of flow homogenizing small holes are formed in the flow homogenizing plates.
2. The reaction chamber as claimed in claim 1, wherein the uniform flow plate further comprises uniform flow macro-pores, and the pore diameter of the uniform flow macro-pores is larger than that of the uniform flow micro-pores; and the sum of the area of the uniform flow large holes and the area of the plurality of uniform flow small holes is larger than the area of the pumping hole.
3. The reaction chamber of claim 1, further comprising a dispersion pipe disposed at a lower portion of the reaction chamber for introducing a process gas into the reaction chamber.
4. The reaction chamber as claimed in claim 3, wherein the bottom of the flow-equalizing plate is opened with an avoiding groove allowing the dispersion tube to pass through.
5. The reaction chamber of claim 1, wherein the at least two flow distribution plates are parallel to each other and spaced apart from each other.
6. The reaction chamber of claim 1, further comprising a connection assembly for connecting the at least two flow distribution plates, the connection assembly comprising a threaded rod, a nut, and a spacer; the spacer bush is a hollow loop bar which is arranged on the at least two flow equalizing plates in a penetrating way and is used for connecting the at least two flow equalizing plates;
the screw rod set up in the tip of spacer, another tip of spacer has cup jointed the nut, the both ends of screw rod all are provided with the screw thread, the one end of screw rod with the spacer is connected, the other end of screw rod fixed set up in on the back furnace gate of reaction chamber.
7. The reaction chamber of claim 6, wherein the flow distribution plate further comprises a mounting hole for mounting the connecting assembly on the flow distribution plate.
8. The reaction chamber of claim 2, wherein the plurality of flow homogenizing holes have the same diameter and are uniformly distributed in an upper region of the surface of the flow homogenizing plate; the uniform flow big holes are arranged in the upper area of the surface of the uniform flow plate.
9. The reaction chamber of claim 2, wherein the distribution apertures of the at least two distribution plates are aligned with each other and the distribution apertures of the at least two distribution plates are aligned with each other.
10. A horizontal semiconductor process furnace comprising a reaction chamber according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021018542.9U CN212322956U (en) | 2020-06-05 | 2020-06-05 | Reaction chamber of horizontal semiconductor process furnace and horizontal semiconductor process furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021018542.9U CN212322956U (en) | 2020-06-05 | 2020-06-05 | Reaction chamber of horizontal semiconductor process furnace and horizontal semiconductor process furnace |
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| CN212322956U true CN212322956U (en) | 2021-01-08 |
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| CN202021018542.9U Active CN212322956U (en) | 2020-06-05 | 2020-06-05 | Reaction chamber of horizontal semiconductor process furnace and horizontal semiconductor process furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116607128A (en) * | 2023-05-11 | 2023-08-18 | 湖南红太阳光电科技有限公司 | Air inlet furnace door and tubular PECVD (plasma enhanced chemical vapor deposition) reaction chamber comprising same |
-
2020
- 2020-06-05 CN CN202021018542.9U patent/CN212322956U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116607128A (en) * | 2023-05-11 | 2023-08-18 | 湖南红太阳光电科技有限公司 | Air inlet furnace door and tubular PECVD (plasma enhanced chemical vapor deposition) reaction chamber comprising same |
| CN116607128B (en) * | 2023-05-11 | 2024-03-29 | 湖南红太阳光电科技有限公司 | Air inlet furnace door and tubular PECVD (plasma enhanced chemical vapor deposition) reaction chamber comprising same |
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