CN212209502U - Sealed firm SMD diode of type - Google Patents
Sealed firm SMD diode of type Download PDFInfo
- Publication number
- CN212209502U CN212209502U CN202021208596.1U CN202021208596U CN212209502U CN 212209502 U CN212209502 U CN 212209502U CN 202021208596 U CN202021208596 U CN 202021208596U CN 212209502 U CN212209502 U CN 212209502U
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- conductive pin
- conductive
- diode
- diode chip
- chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model provides a sealed stable surface-mounted diode, which comprises an insulating packaging body, wherein a first conductive pin, a second conductive pin and a diode chip are arranged in the insulating packaging body, the diode chip is connected between the first conductive pin and the second conductive pin, and the first conductive pin is of a flat plate structure; the first conductive pin is provided with a tin resistance groove, the diode chip is positioned on one side of the tin resistance groove close to the second conductive pin, and the tin resistance groove is positioned in the insulating packaging body; the second conductive pin comprises a conductive bottom sheet, a conductive inclined sheet and a conductive top sheet which are integrally formed, and a downward folding part protruding towards the diode chip is arranged in the conductive top sheet. The utility model is provided with a special shaping limit structure, which can effectively limit the attachable area of the solder paste and avoid the solder paste from overflowing out of the insulating packaging body under the action of the surface tension of the liquid; the downward folding part of the second conductive pin provides a reliable tin climbing foundation for the tin paste, and the structure of the patch type diode is reliable in sealing.
Description
Technical Field
The utility model relates to a diode specifically discloses a sealed SMD diode of firm type.
Background
A diode is an electronic device made of semiconductor material and having unidirectional electrical conductivity. The patch type diode is a sheet diode structure for mounting connection, and comprises an insulation packaging body, a diode chip and two conductive pins.
In the prior art, a chip-type diode is usually configured as a clip-welding structure, that is, two conductive pins are connected to two sides of a diode chip in a clamping manner, and when the conductive pins and the diode chip are welded by solder paste, the solder paste on two sides of the diode chip easily spreads and overflows out of an insulating packaging body, thereby affecting the sealing performance of the chip-type diode.
SUMMERY OF THE UTILITY MODEL
Therefore, the chip type diode is stable in sealing, solder paste can be effectively prevented from overflowing to the outside of the insulating packaging body when the diode chip is welded, and the overall structure of the chip type diode is reliable in sealing.
In order to solve the prior art problem, the utility model discloses a sealed stable surface-mounted diode, which comprises an insulating packaging body, wherein a first conductive pin, a second conductive pin and a diode chip are arranged in the insulating packaging body, the diode chip is connected between the first conductive pin and the second conductive pin, the first conductive pin is of a flat plate structure with the thickness of D, and the second conductive pin is of a Z-shaped structure;
a tin-blocking groove with the depth of D is arranged on the first conductive pin, D is more than 0.1D and less than or equal to 0.4D, a connecting line of the first conductive pin and the second conductive pin is vertical to the tin-blocking groove, the diode chip is positioned on one side of the tin-blocking groove close to the second conductive pin, and the tin-blocking groove is positioned in the insulating packaging body;
the second conductive pin comprises a conductive bottom sheet, a conductive inclined sheet and a conductive top sheet which are integrally formed, a downward folding part protruding towards the diode chip is arranged in the conductive top sheet, and the downward folding part is connected to one side of the diode chip far away from the first conductive pin.
Furthermore, d is more than or equal to 0.02mm and less than or equal to 0.05 mm.
Furthermore, the distance between one end of the first conductive pin, which is far away from the diode chip, and the tin resistance groove is L, and L is more than or equal to 0.8mm and less than or equal to 1.5 mm.
Furthermore, the tin blocking groove is a V-shaped groove.
Furthermore, the included angle between the two bottom surfaces of the tin-blocking groove is alpha, and alpha is more than or equal to 45 degrees and less than or equal to 60 degrees.
Furthermore, a plurality of tin climbing blocks are uniformly distributed on the bottom surface of the lower folding part.
Furthermore, the tin climbing block is a hemisphere.
The utility model has the advantages that: the utility model discloses a sealed stable surface-mounted diode, wherein two conductive pins are provided with special shaping and limiting structures, a solder resisting groove on the first conductive pin can effectively limit the attachable area of solder paste, and the solder paste can be prevented from overflowing out of an insulating packaging body under the action of liquid surface tension; the downward-folding part of the second conductive pin can effectively limit the attachable area of the solder paste, meanwhile, a reliable solder climbing foundation can be provided for the solder paste, the solder paste can be effectively prevented from overflowing to the outside of the insulating packaging body when the diode chip is welded, the structure of the surface-mounted diode is sealed and reliable, and the thinning degree of the surface-mounted diode is high.
Drawings
Fig. 1 is a schematic perspective view of the present invention.
Fig. 2 is a schematic structural view of the utility model after the insulating package is hidden.
Fig. 3 is the utility model discloses split structure schematic diagram behind the hidden insulating packaging body.
The reference signs are: the package comprises an insulating package body 10, a first conductive pin 20, a solder resist groove 21, a second conductive pin 30, a conductive bottom sheet 31, a conductive inclined sheet 32, a conductive top sheet 33, a downward folding part 331, a solder climbing block 332 and a diode chip 40.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
Refer to fig. 1 to 3.
The embodiment of the utility model discloses a sealed firm SMD diode, including insulating packaging body 10, be equipped with first conductive pin 20, second conductive pin 30 and diode chip 40 in insulating packaging body 10, first conductive pin 20 and second conductive pin 30 all have one end to protrude in insulating packaging body 10, diode chip 40 is connected between first conductive pin 20 and second conductive pin 30, first conductive pin 20 is the flat structure that thickness is D, second conductive pin 30 is the zigzag structure, each position thickness of second conductive pin 30 is D;
the solder resist groove 21 with a depth d is disposed on the first conductive lead 20, the solder resist groove 21 divides the first conductive lead 20 to effectively limit the area to which solder paste is attached, the position of the solder paste can be effectively limited under the action of the surface tension of the liquid, the solder paste is prevented from overflowing through the solder resist groove 21, D is more than 0.1D and less than or equal to 0.4D, the solder resist groove 21 has enough depth for preventing the solder paste from spreading, meanwhile, the influence on the structural stability of the first conductive pin 20 due to the overlarge depth can be avoided, the connecting line of the first conductive pin 20 and the second conductive pin 30 is perpendicular to the solder resist groove 21, the diode chip 40 is positioned on one side of the solder resist groove 21 close to the second conductive pin 30, and the solder resist groove 21 is positioned in the insulating packaging body 10, so that the reduction of the adhesion degree between the insulating packaging body 10 and the first conductive pin 20 caused by the fact that solder paste protrudes out of the insulating packaging body 10 can be avoided, and the sealing performance of the overall structure of the patch type diode can be effectively ensured;
the second conductive lead 30 includes a conductive bottom sheet 31, a conductive inclined sheet 32 and a conductive top sheet 33, which are integrally formed, the conductive bottom sheet 31 and the first conductive lead 20 are located in the same horizontal plane, the conductive top sheet 33 is located on one side of the conductive inclined sheet 32 close to the first conductive lead 20, a downward folded portion 331 protruding toward the diode chip 40 is disposed in the conductive top sheet 33, the downward folded portion 331 is located below the conductive top sheet 33, the area of the bottom surface of the downward folded portion 331 is limited, the forming shape of solder paste between the diode chip 40 and the downward folded portion 331 can be effectively controlled by liquid surface tension, the irregular forming of solder paste on the top electrode of the diode chip 40 can be effectively prevented from overflowing to the outside of the insulating package 10, and the downward folded portion 331 is connected to one side of the diode chip 40 away from the first conductive lead 20.
In the embodiment, the depth d of the tin-blocking groove 21 is more than or equal to 0.02mm and less than or equal to 0.05 mm.
Based on the above embodiment, the distance between the end of the first conductive pin 20 away from the diode chip 40 and the solder resist 21 is L, where L is 0.8mm ≦ 1.5mm, and preferably L is 1 mm.
In the present embodiment, the solder resist groove 21 is a V-groove.
Based on the above embodiment, the included angle between the two bottom surfaces of the solder resist groove 21 is α, 45 ° ≦ α ≦ 60 °, and preferably α ≦ 60 °.
In this embodiment, the bottom surface of the downward folding portion 331 is evenly spaced with a plurality of solder paste climbing blocks 332, and a larger attachment area can be provided for the solder paste on the top electrode of the diode chip 40 by the solder paste climbing blocks 332, so that the shape of the solder paste on the top electrode of the diode chip 40 can be further controlled, and the solder paste on the top electrode of the diode chip 40 is prevented from spreading to the bottom electrode to cause short circuit.
Based on the above embodiment, the solder-climbing block 332 is a hemisphere, or the solder-climbing block 332 is a square block.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (7)
1. A sealed stable patch diode comprises an insulating packaging body (10), wherein a first conductive pin (20), a second conductive pin (30) and a diode chip (40) are arranged in the insulating packaging body (10), and the diode chip (40) is connected between the first conductive pin (20) and the second conductive pin (30), and is characterized in that the first conductive pin (20) is of a flat plate structure with the thickness of D, and the second conductive pin (30) is of a Z-shaped structure;
a tin resistance groove (21) with the depth of D is arranged on the first conductive pin (20), D is more than 0.1D and less than or equal to 0.4D, the connecting line of the first conductive pin (20) and the second conductive pin (30) is vertical to the tin resistance groove (21), the diode chip (40) is positioned on one side of the tin resistance groove (21) close to the second conductive pin (30), and the tin resistance groove (21) is positioned in the insulating packaging body (10);
the second conductive pin (30) comprises a conductive bottom sheet (31), a conductive inclined sheet (32) and a conductive top sheet (33) which are integrally formed, a downward folding part (331) protruding towards the diode chip (40) is arranged in the conductive top sheet (33), and the downward folding part (331) is connected to one side of the diode chip (40) far away from the first conductive pin (20).
2. A sealed stable chip diode according to claim 1, wherein the depth d of the solder resist groove (21) is 0.02mm ≤ d ≤ 0.05 mm.
3. The sealed stable chip diode of claim 2, wherein the distance between the end of the first conductive pin (20) away from the diode chip (40) and the solder resist groove (21) is L, and L is greater than or equal to 0.8mm and less than or equal to 1.5 mm.
4. A sealed robust chip diode according to claim 1 wherein the solder dam (21) is a V-groove.
5. A sealed stable chip diode according to claim 4, wherein the angle between the bottom surfaces of the solder resist grooves (21) is α, 45 ° ≦ α ≦ 60 °.
6. The sealed stable patch diode of claim 1, wherein the bottom surface of the folded part (331) is uniformly distributed with a plurality of solder bumps (332).
7. The sealed stable patch diode of claim 6, wherein the wicking block (332) is a hemisphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021208596.1U CN212209502U (en) | 2020-06-24 | 2020-06-24 | Sealed firm SMD diode of type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021208596.1U CN212209502U (en) | 2020-06-24 | 2020-06-24 | Sealed firm SMD diode of type |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212209502U true CN212209502U (en) | 2020-12-22 |
Family
ID=73817612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021208596.1U Active CN212209502U (en) | 2020-06-24 | 2020-06-24 | Sealed firm SMD diode of type |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212209502U (en) |
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2020
- 2020-06-24 CN CN202021208596.1U patent/CN212209502U/en active Active
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