CN213958945U - Compact high-voltage MOS tube - Google Patents
Compact high-voltage MOS tube Download PDFInfo
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- CN213958945U CN213958945U CN202023161974.8U CN202023161974U CN213958945U CN 213958945 U CN213958945 U CN 213958945U CN 202023161974 U CN202023161974 U CN 202023161974U CN 213958945 U CN213958945 U CN 213958945U
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Abstract
The utility model provides a compact high-voltage MOS tube, which comprises an insulating packaging body, wherein a chip is arranged in the insulating packaging body, a D-pole conductive pin is arranged below the chip, and an S-pole conductive pin and a G-pole conductive pin are arranged on two sides of the chip; the D-pole conductive pin comprises a top plate, a vertical plate and a bottom plate, and a ceramic block is connected between the top plate and the bottom plate; the S-pole conductive pin comprises a first support plate and a first flat plate which are vertically connected, a first clamping groove is formed in the top of the first support plate, and a first conductive block is fixed in the first clamping groove; the G-pole conductive pin comprises a second support plate and a second flat plate, a second clamping groove is formed in the top of the second support plate, and a second conductive block is fixed in the second clamping groove; the chip is connected with a first lead and a second lead, one end of the first lead penetrates through the first conductive block, and one end of the second lead penetrates through the second conductive block. The utility model discloses can effectively reduce occupation space, can reduce the probability because of long-pending hot break down under the operating condition of high-pressure heavy current.
Description
Technical Field
The utility model relates to a MOS pipe specifically discloses a compact high pressure MOS pipe.
Background
The MOS transistor is a metal-oxide semiconductor field effect transistor, has the advantages of low on resistance, high input impedance, small drive current, high switching speed and the like, and is widely applied.
The MOS tube is packaged into a product which usually comprises a chip, an insulating packaging body and three conductive pins, wherein the chip is respectively connected with the three conductive pins through direct welding or wires so as to be communicated with an external circuit. The packaging mode of the MOS tube comprises a lead type packaging mode and a patch type packaging mode, the patch type packaging structure is beneficial to the design of a flat electronic product, but the MOS tube packaged by the patch type packaging structure in the prior art occupies a large area, and heat accumulation is obvious under a high-pressure working condition, so that the working performance of the MOS tube is influenced.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide a compact high-voltage MOS transistor aiming at the problems in the prior art, which has a compact overall structure and a small occupied area, is beneficial to realizing a small and light design, and has good heat dissipation under a high-voltage working condition.
In order to solve the prior art problem, the utility model discloses a compact high-voltage MOS tube, which comprises an insulating packaging body, wherein a chip is arranged in the insulating packaging body, a D-pole conductive pin is arranged below the chip, and an S-pole conductive pin and a G-pole conductive pin are respectively arranged at two opposite sides of the chip;
the D-pole conductive pin comprises a top plate, a vertical plate and a bottom plate which are sequentially connected, the top plate and the bottom plate are fixed at the upper end and the lower end of the vertical plate, the top plate is positioned right above the bottom plate, the D-pole conductive pin is C-shaped, a ceramic block is connected between the top plate and the bottom plate, and the bottom plate is positioned right below the insulating packaging body;
the S-pole conductive pin comprises a first support plate and a first flat plate which are vertically connected, the S-pole conductive pin is L-shaped, the first flat plate is positioned below the insulating packaging body, a first clamping groove is formed in the top of the first support plate, and a first conductive block is fixed in the first clamping groove;
the G-pole conductive pin comprises a second support plate and a second flat plate which are vertically connected, the G-pole conductive pin is L-shaped, the second flat plate is positioned below the insulating packaging body, a second clamping groove is formed in the top of the second support plate, and a second conductive block is fixed in the second clamping groove;
a first solid crystal welding layer is connected between the drain electrode of the chip and the top plate, a source electrode of the chip is connected with a first lead through a second solid crystal welding layer, a grid electrode of the chip is connected with a second lead through a third solid crystal welding layer, one end, far away from the chip, of the first lead penetrates through the first conductive block, and one end, far away from the chip, of the second lead penetrates through the second conductive block.
Furthermore, the first flat plate is connected to one side of the first support plate, which is far away from the chip, and the second flat plate is connected to one side of the second support plate, which is far away from the chip.
Furthermore, a first reinforcing groove is arranged at the bottom of the first clamping groove, and a second reinforcing groove is arranged at the bottom of the second clamping groove.
Furthermore, first reinforcement groove and second reinforcement groove are hemisphere groove structure, and the notch area of first reinforcement groove and second reinforcement groove is P, and the tank bottom area of first screens groove and second screens groove is Q, and P < Q.
Further, the first conductive block and the second conductive block are conductive silver glue blocks.
Furthermore, a plurality of nickel particles are arranged in the first conductive block and the second conductive block.
The utility model has the advantages that: the utility model discloses a compact high-voltage MOS tube, which is provided with two S-pole conductive pins and G-pole conductive pins which are vertically bent into an L shape, can effectively reduce the horizontal occupied space of the MOS tube, has compact and reliable whole structure, can effectively save the required installation area when being applied to a PCB (printed circuit board), and is beneficial to realizing small-sized light and thin design; a concave clamping groove structure is formed between the lead and the conductive pin, so that the lead and the conductive block can be reliably positioned, and the internal connection structure of the MOS tube is stable and reliable; under the working condition of high voltage and large current, the top plate, the ceramic block and the bottom plate which are sequentially stacked can effectively improve the heat dissipation performance and reduce the probability of failure caused by heat accumulation.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic view of the three-dimensional structure of the S-pole conductive pin of the present invention.
Fig. 3 is a schematic perspective view of the G-pole conductive pin of the present invention.
The reference signs are: the packaging structure comprises an insulating packaging body 10, a chip 20, a first die bonding welding layer 21, a second die bonding welding layer 22, a first lead 221, a third die bonding welding layer 23, a second lead 231, a D-pole conductive pin 30, a top plate 31, a vertical plate 32, a bottom plate 33, a ceramic block 34, an S-pole conductive pin 40, a first supporting plate 41, a first flat plate 42, a first clamping groove 43, a first reinforcing groove 431, a first conductive block 44, a G-pole conductive pin 50, a second supporting plate 51, a second flat plate 52, a second clamping groove 53, a second reinforcing groove 531, a second conductive block 54 and nickel particles 60.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
Refer to fig. 1 to 3.
The embodiment of the utility model discloses a compact high-voltage MOS tube, which comprises an insulating packaging body 10, wherein a chip 20 is arranged in the insulating packaging body 10, a D-pole conductive pin 30 is arranged below the chip 20, and an S-pole conductive pin 40 and a G-pole conductive pin 50 are respectively arranged on two opposite sides of the chip 20;
the D-pole conductive pin 30 comprises a top plate 31, a vertical plate 32 and a bottom plate 33 which are sequentially connected, the top plate 31 and the bottom plate 33 are fixed at the upper end and the lower end of the vertical plate 32, the top plate 31 is positioned right above the bottom plate 33, the D-pole conductive pin 30 is C-shaped, a ceramic block 34 is connected between the top plate 31 and the bottom plate 33, the upper surface and the lower surface of the ceramic block 34 are respectively clung to and contacted with the top plate 31 and the bottom plate 33, and the ceramic block 34 has good heat-conducting property and insulating property, when the high-voltage LED packaging structure works in a high-voltage state, heat generated by the MOS chip 20 can be effectively released, so that the heat dissipation performance of the whole structure is effectively improved, the bottom plate 33 is located right below the insulating packaging body 10, the bottom plate 33 is of a pin structure connected with an external PCB in a welding mode, the top plate 31 is located in the insulating packaging body 10, part of the vertical plate 32 and part of the ceramic blocks 34 are located in the insulating packaging body 10, and preferably, the vertical plate 32 and the ceramic blocks 34 are both located in the insulating packaging body 10;
the S-pole conductive pin 40 comprises a first support plate 41 and a first flat plate 42 which are vertically connected, the S-pole conductive pin 40 is L-shaped, the first flat plate 42 is located below the insulating packaging body 10, a part of the first support plate 41 is located in the insulating packaging body 10, preferably, the first support plate 41 is located in the insulating packaging body 10, the first flat plate 42 is fixed at the bottom end of the first support plate 41, a first clamping groove 43 is arranged at the top of the first support plate 41, and a first conductive block 44 is fixed in the first clamping groove 43;
the G-pole conductive pin 50 comprises a second support plate 51 and a second flat plate 52 which are vertically connected, the G-pole conductive pin 50 is L-shaped, the second flat plate 52 is positioned below the insulating packaging body 10, part of the second support plate 51 is positioned in the insulating packaging body 10, preferably, the second support plate 51 is positioned in the insulating packaging body 10, the second flat plate 52 is fixed at the bottom end of the second support plate 51, a second clamping groove 53 is formed in the top of the second support plate 51, and a second conductive block 54 is fixed in the second clamping groove 53;
the drain electrode at the bottom of the chip 20 is connected with the top plate 31 through the first die bonding welding layer 21, the source electrode at the top of the chip 20 is connected with the first lead 221 through the second die bonding welding layer 22, the gate electrode at the top of the chip 20 is connected with the second lead 231 through the third die bonding welding layer 23, one end of the first lead 221, which is far away from the chip 20, penetrates through the first conductive block 44 and is in conductive connection with the first conductive block 44, one end of the second lead 231, which is far away from the chip 20, penetrates through the second conductive block 54 and is in conductive connection with the second conductive block 54, the bottom plate 33, the first flat plate 42 and the second flat plate 52 are coplanar, and the stability during application and installation can be improved.
The utility model discloses set up S utmost point conductive foot 40 and G utmost point conductive foot 50 and be L font structure, two extension boards are vertical to be set up in insulating packaging body 10, can effectively reduce insulating packaging body 10' S volume, effectively utilize the space of insulating packaging body 10 vertical direction, can form compact overall arrangement design, can effectively save the installation area that needs when being applied to on the PCB board, use convenient and accord with the design demand to electronic product miniaturization, high density at present; when the die is fixed, the electrodes and the support plate of the chip 20 are connected through the wires, one ends of the wires, far away from the chip 20, are embedded in the clamping grooves through the conductive blocks, the whole structure is stable and firm, the installation is convenient, and the wires are inserted into the reinforcing grooves from top to bottom and then are injected with conductive welding materials; the D-pole conductive pin 30 is bent to be in a C-shaped structure, and the ceramic block 34 is clamped tightly, so that the heat dissipation performance of the whole structure can be obviously improved under the working condition of high voltage and large current, and the fault caused by heat accumulation is avoided.
In the embodiment, the first plate 42 is connected to the side of the first support plate 41 away from the chip 20, and the second plate 52 is connected to the side of the second support plate 51 away from the chip 20, so that a short circuit between the first plate 42 or the second plate 52 and the bottom plate 33 can be effectively avoided.
In this embodiment, the first reinforcing groove 431 is disposed at the bottom of the first locking groove 43, the second reinforcing groove 531 is disposed at the bottom of the second locking groove 53, the first conductive block 44 is accommodated in the first reinforcing groove 431, the second conductive block 54 is accommodated in the second reinforcing groove 531, and a multi-directional locking structure is formed between the conductive block and the support plate, so that the reliability of the conductive block as a connection structure for connecting a wire and the support plate can be effectively improved.
Based on the above embodiment, the first reinforcing groove 431 and the second reinforcing groove 531 are both of a hemispherical groove structure, the notch area of the first reinforcing groove 431 and the notch area of the second reinforcing groove 531 are both P, the groove bottom area of the first clamping groove 43 and the groove bottom area of the second clamping groove 53 are both Q, and P < Q can effectively improve the stability of the clamping structure.
In this embodiment, the first conductive block 44 and the second conductive block 54 are both conductive silver paste blocks, which can effectively ensure the conductivity of the conductive blocks, and can improve the firmness of the conductive blocks connecting the wires and the clamping grooves.
Based on the above embodiment, the first conductive block 44 and the second conductive block 54 are both provided with a plurality of metal nickel particles 60 therein, preferably, the nickel particles 60 may be spherical, columnar, polyhedral, etc., the nickel particles 60 can effectively improve the rigidity of the conductive block, and the conductive silver paste can be effectively prevented from overflowing to the outside of the clamping groove before the conductive silver paste is cured.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (6)
1. The compact high-voltage MOS tube is characterized by comprising an insulating packaging body (10), wherein a chip (20) is arranged in the insulating packaging body (10), a D-pole conductive pin (30) is arranged below the chip (20), and an S-pole conductive pin (40) and a G-pole conductive pin (50) are respectively arranged on two opposite sides of the chip (20);
the D-pole conductive pin (30) comprises a top plate (31), a vertical plate (32) and a bottom plate (33) which are sequentially connected, the top plate (31) and the bottom plate (33) are fixed at the upper end and the lower end of the vertical plate (32), the top plate (31) is positioned right above the bottom plate (33), the D-pole conductive pin (30) is C-shaped, a ceramic block (34) is connected between the top plate (31) and the bottom plate (33), and the bottom plate (33) is positioned right below the insulating packaging body (10);
the S-pole conductive pin (40) comprises a first support plate (41) and a first flat plate (42) which are vertically connected, the S-pole conductive pin (40) is L-shaped, the first flat plate (42) is positioned below the insulating packaging body (10), a first clamping groove (43) is formed in the top of the first support plate (41), and a first conductive block (44) is fixed in the first clamping groove (43);
the G-pole conductive pin (50) comprises a second support plate (51) and a second flat plate (52) which are vertically connected, the G-pole conductive pin (50) is L-shaped, the second flat plate (52) is positioned below the insulating packaging body (10), a second clamping groove (53) is formed in the top of the second support plate (51), and a second conductive block (54) is fixed in the second clamping groove (53);
a first die bonding welding layer (21) is connected between the drain electrode of the chip (20) and the top plate (31), a first lead (221) is connected to the source electrode of the chip (20) through a second die bonding welding layer (22), a second lead (231) is connected to the grid electrode of the chip (20) through a third die bonding welding layer (23), one end, far away from the chip (20), of the first lead (221) penetrates through the first conductive block (44), and one end, far away from the chip (20), of the second lead (231) penetrates through the second conductive block (54).
2. A compact high voltage MOS transistor according to claim 1, wherein the first plate (42) is connected to the first support (41) on a side remote from the chip (20), and the second plate (52) is connected to the second support (51) on a side remote from the chip (20).
3. The compact high-voltage MOS transistor as claimed in claim 1, wherein the first clamping groove (43) has a first reinforcing groove (431) at its bottom, and the second clamping groove (53) has a second reinforcing groove (531) at its bottom.
4. A compact high-voltage MOS transistor according to claim 3, wherein the first reinforcing groove (431) and the second reinforcing groove (531) are both of a hemispherical groove structure, the notch areas of the first reinforcing groove (431) and the second reinforcing groove (531) are both P, the groove bottom areas of the first clamping groove (43) and the second clamping groove (53) are both Q, and P < Q.
5. The compact high voltage MOS transistor of claim 1 wherein the first conductive bump (44) and the second conductive bump (54) are conductive silver paste bumps.
6. The compact high voltage MOS transistor of claim 5 wherein the first conductive block (44) and the second conductive block (54) each have nickel particles (60) disposed therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023161974.8U CN213958945U (en) | 2020-12-22 | 2020-12-22 | Compact high-voltage MOS tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023161974.8U CN213958945U (en) | 2020-12-22 | 2020-12-22 | Compact high-voltage MOS tube |
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| Publication Number | Publication Date |
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| CN213958945U true CN213958945U (en) | 2021-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202023161974.8U Active CN213958945U (en) | 2020-12-22 | 2020-12-22 | Compact high-voltage MOS tube |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114497234A (en) * | 2022-01-25 | 2022-05-13 | 先之科半导体科技(东莞)有限公司 | Low-loss small-volume Schottky diode |
-
2020
- 2020-12-22 CN CN202023161974.8U patent/CN213958945U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114497234A (en) * | 2022-01-25 | 2022-05-13 | 先之科半导体科技(东莞)有限公司 | Low-loss small-volume Schottky diode |
| CN114497234B (en) * | 2022-01-25 | 2022-12-06 | 先之科半导体科技(东莞)有限公司 | Low-loss small-volume Schottky diode |
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