CN212209501U - Short-circuit-proof diode chip and packaged diode - Google Patents

Short-circuit-proof diode chip and packaged diode Download PDF

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Publication number
CN212209501U
CN212209501U CN202021208515.8U CN202021208515U CN212209501U CN 212209501 U CN212209501 U CN 212209501U CN 202021208515 U CN202021208515 U CN 202021208515U CN 212209501 U CN212209501 U CN 212209501U
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China
Prior art keywords
ring
electrode
chip
short
insulating
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CN202021208515.8U
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Chinese (zh)
Inventor
刘孝雄
张毅
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Dongguan Jiajun Science & Technology Co ltd
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Dongguan Jiajun Science & Technology Co ltd
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Priority to CN202021208515.8U priority Critical patent/CN212209501U/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331Disposition
    • H01L2224/3318Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181On opposite sides of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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Abstract

The utility model provides a prevent diode chip and encapsulation diode of short circuit, including the chip body, the back and the front of chip body are equipped with first electrode and second electrode respectively, and the front of chip body still is equipped with the insulation that the ring width is D and separates the ring, and the insulation is cut off the ring and is surrounded outside the second electrode, and the thickness of second electrode equals the insulation thickness that separates the ring, is equipped with the anti-overflow protection ring that the ring width is D on second electrode and the insulation is cut off the ring, and D > D, the outer ring edge that the outer ring edge of anti-overflow protection ring separates the outer ring edge that the ring was separated with the insulation and aligns. The utility model discloses be provided with the anti-overflow protection ring on the electrode at top, can effectively restrict the position of tin cream, and need not to reduce the volume of this electrode, not only can prevent that the tin cream from spilling over to the side all around of chip body to avoid the diode chip by the short circuit, can also ensure that the electrical performance of diode chip is good, the encapsulation diode structure that obtains after the encapsulation is reliable.

Description

Short-circuit-proof diode chip and packaged diode
Technical Field
The utility model relates to a diode field specifically discloses a prevent diode chip and encapsulation diode of short circuit.
Background
An electronic device with diode made of semiconductor material is composed of a PN junction, electrode lead and casing.
The specific process of diode encapsulation is that the circuit pin on the chip that has the PN junction links to each other with the lead frame welding, will mould plastics the encapsulation to the lead frame that has the chip again, and the packaging body can completely cut off chip and external environment, can prevent that impurity in the air from causing harmful effects such as corruption to the chip circuit. In the prior art, electrodes are arranged on two sides of a diode chip, and in the packaging and welding process, solder paste located on the top electrode of the diode chip easily overflows to the bottom electrode from the periphery, so that the diode chip is short-circuited finally, and the reliability is low.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide a short-circuit prevention diode chip and a packaged diode, which can effectively limit the position of solder paste on the top of the diode chip and prevent the diode chip from being short-circuited.
For solving the prior art problem, the utility model discloses a prevent diode chip of short circuit, including the chip body, the back and the front of chip body are equipped with first electrode and second electrode respectively, and the front of chip body still is equipped with the insulating ring that separates of ring width for D, and insulating wall encircles outside the second electrode, and the thickness of second electrode equals the insulating thickness that separates the ring, is equipped with the anti-overflow protection ring that the ring width is D on second electrode and the insulating wall ring, and D > D, the outer ring edge of anti-overflow protection ring aligns with the outer ring edge that insulating separating the ring.
Further, the second electrode is a silver electrode.
Further, the ring width d of the insulating isolation ring satisfies: d is more than or equal to 25 mu m and less than or equal to 40 mu m.
Further, the ring width D of the anti-overflow protection ring satisfies: d is more than or equal to 60 mu m and less than or equal to 90 mu m.
Furthermore, the thickness of the anti-overflow protection ring is 25-40 μm.
Further, the anti-overflow protection ring is a PVC ring.
The utility model also discloses a prevent encapsulation diode of short circuit, including the above arbitrary diode chip of preventing the short circuit, still include the insulation package body, the chip body is located the insulation package body, and first electrode is connected with first electrically conductive pin through first soldering tin layer, and the second electrode is connected with the electrically conductive pin of second through second soldering tin layer.
The utility model has the advantages that: the utility model discloses a prevent diode chip and encapsulation diode of short circuit is provided with the anti-overflow protection ring on the electrode at top, can effectively restrict the position of tin cream, and need not to reduce the volume of this electrode, not only can prevent that the tin cream from spilling over to the side all around of chip body to avoid the diode chip by the short circuit, can also ensure that the electrical performance of diode chip is good, the encapsulation diode structure that obtains after the encapsulation is reliable.
Drawings
Fig. 1 is a schematic view of the three-dimensional structure of the short-circuit-proof diode chip of the present invention.
Fig. 2 is a schematic view of the overlooking structure of the short-circuit-proof diode chip of the present invention.
Fig. 3 is a schematic cross-sectional view along a-a' in fig. 2.
Fig. 4 is the schematic diagram of the internal structure of the short-circuit prevention packaged diode of the present invention.
The reference signs are: the chip comprises a chip body 10, a first electrode 11, a first solder layer 111, a second electrode 12, a second solder layer 121, an insulating isolation ring 13, an anti-overflow protection ring 14, an insulating packaging body 20, a first conductive pin 21 and a second conductive pin 22.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
Refer to fig. 1 to 4.
The embodiment of the utility model discloses a prevent diode chip of short circuit, including chip body 10, chip body 10 is the silicon wafer that contains the PN junction, also known as the silicon chip, the back and the front of chip body 10 are equipped with first electrode 11 and second electrode 12 respectively, the front of chip body 10 still is equipped with the insulating ring 13 that the ring width is D, the interval between the outer ring of insulating ring 13 and the inner ring is D, insulating ring 13 surrounds outside second electrode 12, the thickness of second electrode 12 equals the thickness of insulating ring 13, the top surface of second electrode 12 and the top surface coplane of insulating ring 13 form a level surface altogether, be equipped with the anti-overflow protection ring 14 that the ring width is D on second electrode 12 and insulating ring 13, D > D, the outer ring edge of anti-overflow protection ring 14 aligns with the outer ring edge of insulating ring 13, anti-overflow protection ring 14 covers on insulating ring 13, and the opening projection of the anti-overflow protection ring 14 on the horizontal plane is located in the second electrode 12, namely, the anti-overflow protection ring 14 also covers the periphery of the upper surface of the second electrode 12, the window of the second electrode 12 is effectively narrowed, the position of the solder paste can be effectively limited by the insulating isolation ring 13, the situation that the solder paste overflows to the peripheral side surface of the chip body 10 to cause the short circuit between the first electrode 11 and the second electrode 12 can be avoided, and the second electrode 12 can be effectively ensured to have a large enough area, the size of the window does not need to be adjusted by reducing the area of the second electrode 12, and the electrical performance of the electrode can be effectively ensured while the short circuit of the diode chip is avoided.
In this embodiment, the second electrode 12 is a silver electrode, and the metal silver has good conductivity, which can effectively improve the conductivity of the whole diode chip, and preferably, the first electrode 11 is also a silver electrode.
In the present embodiment, the ring width d of the insulating cutoff ring 13 satisfies: d is 25 μm ≦ 40 μm, preferably 30 μm.
Based on the above embodiment, the ring width D of the overflow prevention protection ring 14 satisfies: d is more than or equal to 60 micrometers and less than or equal to 90 micrometers, the area of the anti-overflow protection ring 14 covering the upper surface of the second electrode 12 can be ensured to be large enough, so that the windowing area of the second electrode 12 can be effectively controlled, and preferably, the length and the width of the chip body 10 are all between 600 and 800 micrometers.
Based on the above embodiment, the thickness of the anti-overflow protection ring 14 is 25 to 40 μm, and preferably, the thickness of the anti-overflow protection ring 14 is 30 μm, so that the tin resistance of the anti-overflow protection ring 14 can be ensured.
In the embodiment, the anti-overflow protection ring 14 is a PVC ring, which is named as PVC in the chinese language, and the PVC has good insulating property, smooth surface, and non-tin-sticking property, and when the solder paste on the second electrode 12 spreads to the anti-overflow protection ring 14, the solder paste will shrink in the opposite direction of the anti-overflow protection ring 14, so as to more effectively prevent the solder paste from overflowing through the anti-overflow protection ring 14.
The embodiment of the utility model provides a still disclose a prevent encapsulation diode of short circuit, including the diode chip of above arbitrary short circuit of preventing, still include insulating packaging body 20, chip body 10 is located insulating packaging body 20, first electrode 11 is connected with first electrically conductive pin 21 through first soldering tin layer 111, second electrode 12 is connected with second electrically conductive pin 22 through second soldering tin layer 121, the bottom surface of first electrically conductive pin 21 and the bottom surface of second electrically conductive pin 22 all bulge in insulating packaging body 20's bottom surface, second electrically conductive pin 22 is connected in chip body 10's top, preferably, second electrically conductive pin 22 is the zigzag, and the top of second electrically conductive pin 22 is equipped with climbs the tin lug, it can further avoid second solder paste layer to spill over outside anti-overflow protection ring 14 to climb the tin lug.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims (7)

1. The utility model provides a prevent diode chip of short circuit, includes chip body (10), the back and the front of chip body (10) are equipped with first electrode (11) and second electrode (12) respectively, its characterized in that, the front of chip body (10) still is equipped with insulating disconnected ring (13) that the ring width is D, insulating disconnected ring (13) of separating is around outside second electrode (12), the thickness of second electrode (12) equals the thickness of insulating disconnected ring (13), second electrode (12) with be equipped with on insulating disconnected ring (13) the anti-overflow protection ring (14) that the ring width is D, D > D, the outer loop edge of anti-overflow protection ring (14) with the outer loop edge that insulating disconnected ring (13) of separating aligns.
2. A short-circuit prevention diode chip as claimed in claim 1, characterized in that the second electrode (12) is a silver electrode.
3. A short-circuit prevention diode chip as claimed in claim 1, characterized in that the ring width d of the insulating and isolating ring (13) satisfies: d is more than or equal to 25 mu m and less than or equal to 40 mu m.
4. A short-circuit prevention diode chip as claimed in claim 3, wherein the spill-proof protection ring (14) has a ring width D satisfying: d is more than or equal to 60 mu m and less than or equal to 90 mu m.
5. The short-circuit prevention diode chip as claimed in claim 4, wherein the thickness of the anti-overflow protection ring (14) is 25-40 μm.
6. The short-circuit prevention diode chip as claimed in claim 1, wherein the overflow-proof protection ring (14) is a PVC ring.
7. An anti-short-circuit packaged diode, comprising the anti-short-circuit diode chip as claimed in any one of claims 1 to 6, and further comprising an insulating package (20), wherein the chip body (10) is located in the insulating package (20), the first electrode (11) is connected to a first conductive pin (21) through a first solder layer (111), and the second electrode (12) is connected to a second conductive pin (22) through a second solder layer (121).
CN202021208515.8U 2020-06-24 2020-06-24 Short-circuit-proof diode chip and packaged diode Active CN212209501U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202021208515.8U CN212209501U (en) 2020-06-24 2020-06-24 Short-circuit-proof diode chip and packaged diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202021208515.8U CN212209501U (en) 2020-06-24 2020-06-24 Short-circuit-proof diode chip and packaged diode

Publications (1)

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CN212209501U true CN212209501U (en) 2020-12-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112992700A (en) * 2021-02-01 2021-06-18 中之半导体科技(东莞)有限公司 Stable die bonding method for diode
TWI818569B (en) * 2022-06-02 2023-10-11 強茂股份有限公司 Packaging components and packaging methods to prevent solder overflow

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112992700A (en) * 2021-02-01 2021-06-18 中之半导体科技(东莞)有限公司 Stable die bonding method for diode
CN112992700B (en) * 2021-02-01 2021-09-28 先之科半导体科技(东莞)有限公司 Stable die bonding method for diode
TWI818569B (en) * 2022-06-02 2023-10-11 強茂股份有限公司 Packaging components and packaging methods to prevent solder overflow

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