CN212085004U - Novel one-way protection device for reducing forward residual voltage - Google Patents
Novel one-way protection device for reducing forward residual voltage Download PDFInfo
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- CN212085004U CN212085004U CN201921723359.6U CN201921723359U CN212085004U CN 212085004 U CN212085004 U CN 212085004U CN 201921723359 U CN201921723359 U CN 201921723359U CN 212085004 U CN212085004 U CN 212085004U
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Abstract
The utility model discloses a novel reduce one-way protection device of forward residual pressure, including N type substrate silicon chip, there are the P type diffusion zone that pushes away the knot darker and push away the N type diffusion zone that the knot is darker in N type substrate front, there are the N type impurity diffusion zone that pushes away the knot shallower and push away the P type impurity diffusion zone that the knot is shallower in the P type diffusion zone that pushes away the knot darker, push away knot deeper N type diffusion zone and link to each other with the P type impurity diffusion zone that pushes away the knot shallower through metal, push away knot shallower N type impurity diffusion zone and draw forth as whole device negative pole through oxide layer trompil evaporation metal; the back of the device is provided with an N-type diffusion area with a deeper push junction and a P-type impurity diffusion area with a shallower push junction, and the two diffusion areas are connected through metal to form an anode of the device to be led out. The utility model discloses an increase the PNPN device in one-way negative resistance structure to pass through the resistance short circuit with the gate pole of PNPN device to the positive pole, thereby realized a novel one-way protection device that reduces the forward residual voltage.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor, a surge and ESD protection design technique of semiconductor integrated chip are related to, especially, relate to a novel one-way protection device of reduction forward residual voltage.
Background
With the popularization of electronic systems and network lines, electronic products often encounter unexpected voltage transients and surges in use, and the transient interference everywhere can seriously harm the safe operation of the electronic systems and is manifested by breakdown or burning of semiconductor devices in the electronic products, including diodes, triodes, field effect transistors and the like. In order to avoid damaging electronic equipment by surge voltage, a surge protection device is adopted at a key part in a system, so that instantaneous surge current bypasses the ground, and the purposes of weakening and eliminating overvoltage and overcurrent are achieved, thereby playing a role in protecting the safe operation of the electronic equipment.
The surge protection device has a safe working area, measured by two parameters of trigger voltage of the device and residual voltage during starting operation, the trigger voltage and the residual voltage during starting operation are both between the working voltage and the breakdown voltage of a post-stage circuit, and once the trigger voltage and the residual voltage exceed the working voltage and the breakdown voltage, the protected circuit is burnt out either when the trigger voltage is not started or after the trigger voltage and the breakdown voltage are started. At present, two types of unidirectional ESD protection devices are mainly used, one type is a traditional PN structure (shown as A in figure 1), and the substrate epitaxial wafer is formed by injecting or diffusing special-shaped impurities. At present, an improved unidirectional structure is used more, as shown in fig. 1B, the structure is referred to as a unidirectional negative resistance device, a bidirectional device and a unidirectional device are connected in parallel, the advantages of the two devices are integrated, the breakdown direction has the snapback characteristic of the bidirectional device, the on-resistance and residual voltage are greatly reduced, the surge capacity is improved, and the other direction is the forward characteristic of a unidirectional diode. In the same area, because only partial forward region of the improved unidirectional structure is a P-type impurity region, the effective area of the unidirectional device is smaller than that of the traditional PN junction unidirectional device, and the forward residual voltage of the unidirectional device is higher than that of the common unidirectional device, which is not beneficial to protecting a rear-stage circuit.
SUMMERY OF THE UTILITY MODEL
In order to solve the problem that the forward residual voltage of improved generation one-way device structure is high, obtain a method that can reduce the forward residual voltage under the equal area condition, obtained through carrying out the innovative design to the structure the utility model discloses the device is simple in structure, easy to operate, reliable.
The utility model discloses a following technical scheme solves above-mentioned technical problem: a novel one-way protection device for reducing forward residual voltage comprises an N-type substrate silicon wafer, wherein a P-type diffusion area with deeper push knot and an N-type diffusion area with deeper push knot are arranged on the front surface of an N-type substrate sheet, an N-type impurity diffusion area with shallower push knot and a P-type impurity diffusion area are arranged in the P-type diffusion area with deeper push knot, the N-type diffusion area with deeper push knot is connected with the P-type impurity diffusion area through metal, and the N-type impurity diffusion area with shallower push knot is led out as the cathode of the whole device by opening an evaporation metal through an oxide layer; the back of the device is provided with an N-type diffusion area with a deeper push junction and a P-type impurity diffusion area with a shallower push junction, and the two diffusion areas are connected through metal to form an anode of the device to be led out.
The resistivity of the N-type substrate silicon wafer is 0.01-10 omega-CM, the thickness is 180-220 mu m, and double-sided diffusion is carried out on the substrate by adopting a mesa process.
The junction depth of the P-type diffusion region with the deeper push junction is larger than that of the P-type impurity diffusion region, the P-type diffusion region with the deeper push junction is annealed for a long time, and the junction depth range is 15-30 mu m.
The junction depth of the shallow N-type impurity diffusion region and the shallow P-type impurity diffusion region is 2-5 microns.
The N-type impurity diffusion region with the deeper push junction on the front surface, the N-type impurity diffusion region with the deeper push junction on the back surface and the N-type impurity diffusion region with the shallower push junction on the back surface adopt the same process; the N-type impurity diffusion region with deeper junction pushing on the front surface and the N-type impurity diffusion region with deeper junction pushing on the back surface adopt long-time high-temperature annealing, and the junction depth range is 20-35 mu m.
The front cathode electrode and the interconnection metal are made of Al and are formed by adopting an evaporation process; the back anode electrode is made of Ti-Ni-Ag and is formed by an evaporation process.
A PNPN structure device is integrated inside the substrate and consists of a P-type impurity diffusion area with a shallow push junction, an N-type substrate silicon wafer, a P-type diffusion area with a deep push junction and an N-type diffusion area; and the shallow P-type impurity diffusion region and the N-type substrate silicon wafer are connected through back metal to form a PNPN structure with an anode short circuit.
The gate electrode of the PNPN structure, namely the P-type diffusion region with deeper push junction, is connected with the N-type substrate region through metal. A PN structure device D1 is integrated in the novel unidirectional protection device for reducing the forward residual voltage, and the device is composed of a P-type diffusion region with a deeper push junction and an N-type impurity diffusion region with a shallower push junction; and when viewed from the back to the front, the P-type diffusion region with the deeper push junction, the N-type substrate region and the N-type diffusion region with the deeper push junction form a resistor R2 which is connected with the PN junction in series and then reaches the cathode at the back.
The beneficial effects of the utility model are that through increasing the PNPN device in one-way negative resistance structure to pass through resistance short circuit to the positive pole with the gate pole of PNPN device, thereby realize a neotype one-way protection device that reduces the forward residual voltage.
Drawings
Fig. 1 a is an equivalent circuit diagram of a conventional unidirectional device.
In fig. 1, B is an equivalent circuit diagram of a unidirectional negative resistance device.
Fig. 2 is a schematic longitudinal cross-sectional view of the device of the present invention.
Fig. 3 is an equivalent circuit diagram of the present invention.
Fig. 4 is a schematic diagram of anode-to-cathode current discharge in an embodiment of the present invention.
Fig. 5 is a forward TLP comparison curve of an embodiment of the present invention and a conventional unidirectional negative resistance device.
Detailed Description
As shown in fig. 2-5, the unidirectional protection device for reducing forward residual voltage of the present invention comprises an N-type substrate silicon wafer 301, a P-type diffusion region 302 with a deeper push junction and an N-type diffusion region 305 with a deeper push junction are formed on the front surface of the N-type substrate wafer, an N-type impurity diffusion region 304 with a shallower push junction and a P-type impurity diffusion region 303 with a shallower push junction are formed on the P-type diffusion region 302 with a deeper push junction, the N-type diffusion region 305 with a deeper push junction is connected to the P-type impurity diffusion region 303 with a shallower push junction through metal, and the N-type impurity diffusion region 304 with a shallower push junction is led out as the cathode of the whole device through the evaporation metal of oxide layer opening; the back of the device is provided with an N-type diffusion region 309 with a deeper push junction and a P-type diffusion region 307 with a shallower push junction, and the two diffusion regions are connected through metal to form an anode lead-out of the device.
The resistivity of the N-type substrate silicon wafer 301 is 0.01-10 omega-CM, the thickness is 180-220 mu m, and double-sided diffusion is carried out on the substrate by adopting a mesa process. The junction depth of the P-type diffusion region 302 with deeper push junction is larger than that of the P-type impurity diffusion region 303 with shallower push junction, and the P-type diffusion region 302 with deeper push junction adopts long-time annealing, and the junction depth range is 15-30 μm.
The junction depth of the shallow N-type impurity diffusion region 304 and the shallow P-type impurity diffusion region 303 is in the range of 2-5 μm.
The N-type diffusion region 309 with the deeper push junction, the N-type diffusion region 305 with the deeper push junction and the N-type impurity diffusion region 304 with the shallower push junction adopt the same process; the deeper N-type diffusion region 309 and the deeper N-type diffusion region 305 adopt long time high temperature annealing, and the junction depth range is 20-35 μm.
The front cathode electrode and the interconnection metal are made of Al and are formed by adopting an evaporation process; the back anode electrode is made of Ti-Ni-Ag and is formed by an evaporation process.
A PNPN structure device is integrated inside the substrate, and comprises a P-type diffusion region 307 with shallow push junction, an N-type substrate silicon wafer 301, a P-type diffusion region 302 with deep push junction and an N-type impurity diffusion region 304 with shallow push junction; and the shallow P-type diffusion region 307 and the N-type substrate silicon wafer 301 are connected through back metal to form a PNPN structure with short anode.
The gate of the PNPN structure, the deeper P-type diffusion region 302 of the push junction, is connected to the N-type substrate region by a metal.
The novel unidirectional protection device for reducing the forward residual voltage is internally integrated with a PN structure device D1 and consists of a P-type diffusion region 302 with a deeper push junction and an N-type impurity diffusion region 304 with a shallower push junction; when viewed from the back side to the front side, the N-type diffusion region 309 with a deeper junction, the N-type silicon substrate 301, and the N-type diffusion region 305 with a deeper junction form a resistor R2, which is connected in series with the PN junction and reaches the back cathode.
When surge attacks from the anode to the cathode, the PN structure device D1 is firstly conducted, and as the external voltage increases, the current of the resistor R2 and the resistor D1 increases, so that current is continuously injected to the gate of the PNPN device, and the base-collector voltage of the NPN triode in the PNPN structure rapidly reaches 0.7V, so that the two triodes enter a positive feedback state, and the SCR structure is triggered to rapidly discharge large current, fig. 4 shows that a short dotted line IF1 is a current discharge path of the resistor and the resistor D1, the PNPN in a square frame is an IF2 current discharge path, and the two paths are simultaneously discharged in a large current state. Because the PNPN structure has good robustness and strong current discharge capacity in unit area, the on-resistance of the whole device is reduced, and the residual voltage is reduced to improve the surge capacity. In particular, as the substrate resistivity decreases, the implant dose increases for the deeper push-to-junction N-type diffusion region 305 and the deeper push-to-junction N-type diffusion region 309, and the anneal increases, the gate current is increased, which increases the PNPN turn-on speed and improves the forward residual voltage characteristic. On the other hand, when a surge strikes from the front side to the back side, the diode D1 breaks down in the reverse direction first, and then reaches the anode in the forward direction through a resistor or a PN junction. By adjusting the process and the distance between the P-type diffusion region 302 with the deeper push junction and the N-type impurity diffusion region 304 with the shallower push junction, the unidirectional protection device applied to different working voltages can be realized. Fig. 5 shows a comparison between the forward TLP curves of the unidirectional protection device and the normal unidirectional negative resistance device of the present invention. In a word, compared with the traditional one-way device, the novel one-way protection device has the advantages that the reverse surge capacity is enhanced, and compared with the common one-way negative resistance device, the novel one-way protection device has the advantages that the forward residual voltage is lower, and the on-resistance is smaller.
The present invention has been described in detail, but the above description is only a preferred embodiment of the present invention, and should not limit the scope of the present invention. That is, all equivalent changes and modifications made according to the scope of the present invention should still fall within the scope of the patent coverage of the present invention.
Claims (9)
1. A novel unidirectional protection device for reducing forward residual voltage is characterized by comprising an N-type substrate silicon wafer (301), wherein the front surface of an N-type substrate sheet is provided with a P-type diffusion region (302) with a deeper push junction and an N-type diffusion region (305) with a deeper push junction, the P-type diffusion region (302) with the deeper push junction is provided with an N-type impurity diffusion region (304) with a shallower push junction and a P-type impurity diffusion region (303), the N-type diffusion region (305) with the deeper push junction is connected with the P-type impurity diffusion region (303) through metal, and the N-type impurity diffusion region (304) with the shallower push junction is led out as the cathode of the whole device through opening evaporation metal of an oxide layer; the back of the device is provided with an N-type diffusion region (309) with a deeper push junction and a P-type impurity diffusion region (307) with a shallower push junction, and the two diffusion regions are connected through metal to form an anode lead-out of the device.
2. The novel unidirectional protection device for reducing forward residual voltage as claimed in claim 1, wherein the resistivity of the N-type substrate silicon wafer (301) is 0.01-10 Ω -CM, the thickness is 180-.
3. The novel unidirectional protection device for reducing forward residual voltage as claimed in claim 1, wherein the junction depth of the P-type diffusion region (302) with deeper junction push is larger than that of the P-type impurity diffusion region (303), and the P-type diffusion region (302) with deeper junction push adopts long-time annealing, and the junction depth ranges from 15 μm to 30 μm.
4. The novel unidirectional protection device for reducing forward residual voltage as claimed in claim 1, wherein said shallow N-type impurity diffusion region (304) and P-type impurity diffusion region (303) have junction depth in the range of 2-5 μm.
5. The novel unidirectional protection device for reducing forward residual voltage as claimed in claim 1, wherein the N-type impurity diffusion region (309) with deeper junction push-off is made by the same process as the N-type impurity diffusion region (305) with deeper junction push-off and the N-type impurity diffusion region (304) with shallower junction push-off; the N-type impurity diffusion region (309) with the deeper junction pushing and the N-type diffusion region (305) with the deeper junction pushing adopt long-time high-temperature annealing, and the junction depth range is 20-35 mu m.
6. The novel unidirectional protection device for reducing forward residual voltage as claimed in claim 1, wherein said front cathode electrode and interconnection metal are made of Al and formed by evaporation process; the back anode electrode is made of Ti-Ni-Ag and is formed by an evaporation process.
7. The novel unidirectional protection device for reducing forward residual voltage as claimed in claim 1, wherein a PNPN structure device is integrated inside, and is composed of the P-type impurity diffusion region (307) with shallow push junction, an N-type substrate silicon wafer (301), a P-type diffusion region (302) with deep push junction, and an N-type diffusion region (304); and the shallow P-type impurity diffusion region (307) and the N-type substrate silicon wafer (301) are connected through back metal to form a PNPN structure with a short anode.
8. The device of claim 7, wherein the gate of PNPN structure, i.e. the P-type diffusion region (302) with deeper push-on junction, is connected to the N-type substrate region through metal.
9. The novel unidirectional protection device for reducing forward residual voltage as claimed in claim 1, wherein a PN structure device D1 is integrated inside, and is composed of the P-type diffusion region (302) with deeper junction push and the N-type impurity diffusion region (304) with shallower junction push; and when viewed from the back side to the front side, the N-type diffusion region (309) with a deeper push junction, the N-type substrate silicon wafer (301) and the N-type diffusion region (305) with a deeper push junction form a resistor R2, and the resistor R2 is connected with the PN junction in series and then reaches a back side cathode.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110600469A (en) * | 2019-07-01 | 2019-12-20 | 上海长园维安微电子有限公司 | Novel one-way protection device for reducing forward residual voltage |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600469A (en) * | 2019-07-01 | 2019-12-20 | 上海长园维安微电子有限公司 | Novel one-way protection device for reducing forward residual voltage |
| CN110600469B (en) * | 2019-07-01 | 2024-05-17 | 上海维安半导体有限公司 | Novel reduce unidirectional protection device of forward residual voltage |
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