CN211907416U - 一种耐热的半导体 - Google Patents
一种耐热的半导体 Download PDFInfo
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- CN211907416U CN211907416U CN202020621716.4U CN202020621716U CN211907416U CN 211907416 U CN211907416 U CN 211907416U CN 202020621716 U CN202020621716 U CN 202020621716U CN 211907416 U CN211907416 U CN 211907416U
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- heat
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 230000003064 anti-oxidating effect Effects 0.000 claims abstract description 11
- 229920000052 poly(p-xylylene) Polymers 0.000 claims abstract description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229920006260 polyaryletherketone Polymers 0.000 claims abstract description 9
- 229920000642 polymer Polymers 0.000 claims abstract description 9
- 239000003365 glass fiber Substances 0.000 claims abstract description 8
- 239000011787 zinc oxide Substances 0.000 claims abstract description 8
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 9
- 239000004917 carbon fiber Substances 0.000 claims description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 9
- 230000000694 effects Effects 0.000 abstract description 17
- 230000003647 oxidation Effects 0.000 abstract description 9
- 238000007254 oxidation reaction Methods 0.000 abstract description 9
- 230000008901 benefit Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000007774 longterm Effects 0.000 abstract description 3
- -1 poly (p-xylylene) Polymers 0.000 abstract description 2
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 abstract 4
- 238000000034 method Methods 0.000 description 6
- 238000003466 welding Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202020621716.4U CN211907416U (zh) | 2020-04-23 | 2020-04-23 | 一种耐热的半导体 |
Applications Claiming Priority (1)
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CN202020621716.4U CN211907416U (zh) | 2020-04-23 | 2020-04-23 | 一种耐热的半导体 |
Publications (1)
Publication Number | Publication Date |
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CN211907416U true CN211907416U (zh) | 2020-11-10 |
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CN202020621716.4U Active CN211907416U (zh) | 2020-04-23 | 2020-04-23 | 一种耐热的半导体 |
Country Status (1)
Country | Link |
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CN (1) | CN211907416U (zh) |
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2020
- 2020-04-23 CN CN202020621716.4U patent/CN211907416U/zh active Active
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201110 Address after: No.102, No.1, second lane, Dalang Industrial Zone, Hongxing community, Songgang street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen feisida photoelectric Co., Ltd Address before: 455000 Wenming Avenue, Long'an District, Anyang City, Henan Province Patentee before: Li Jinjun |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210107 Address after: 225000 Dongting Lake Road, Gaoyou Economic Development Zone, Yangzhou City, Jiangsu Province Patentee after: YANGZHOU GANGXIN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 518105 No.102, Lane 2, Dalang Industrial Zone, Hongxing community, Songgang street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: Shenzhen feisida photoelectric Co., Ltd |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220113 Address after: 313000 room 1501, 15 / F, building h, headquarters, No. 1188, District Fu Road, Wuxing District, Huzhou City, Zhejiang Province Patentee after: Tianxin Tiansi (Huzhou) Intelligent Technology Co.,Ltd. Address before: 225000 Dongting Lake Road, Gaoyou Economic Development Zone, Yangzhou City, Jiangsu Province Patentee before: YANGZHOU GANGXIN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |