CN211739547U - Plug-in heat transfer device, air conditioning assembly, refrigerating device and thermoelectric generation device based on semiconductor wafer - Google Patents

Abstract

The utility model provides a bayonet heat transfer device based on semiconductor wafer and adopt device's equipment. The heat transfer device comprises a heat transfer element and two fluid containers; the heat transfer element comprises a semiconductor wafer and two heat conduction plates, and the semiconductor wafer is clamped by the two heat conduction plates; the heat conducting plates are respectively inserted into the two fluid containers; two fluid containers respectively pass through two fluid containers, wherein the two fluid containers have temperature difference and flow directions are opposite; the two end arms of the semiconductor wafer are connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer; or the two end electric arms of the semiconductor wafer are respectively connected with an electric load so as to realize the temperature difference power generation between the first end and the second end of the semiconductor wafer. The heat transfer device provided by the utility model can efficiently refrigerate and heat, and can realize temperature difference to generate electricity; the distributed thermoelectric power generation system can be used for refrigerator cold storages, refrigeration air conditioners and heating air conditioners, is particularly suitable for automobile air conditioners, and can also be used for distributed thermoelectric power generation.

Description

Plug-in heat transfer device, air conditioning assembly, refrigerating device and thermoelectric generation device based on semiconductor wafer

Technical Field

The utility model relates to a thermal technology and thermoelectric technology field especially relate to a bayonet heat transfer device, air conditioner subassembly, refrigerating plant and thermoelectric generation device based on semiconductor wafer.

Background

When an N-type semiconductor material and a P-type semiconductor material are connected into a galvanic couple pair, energy transfer can be generated after direct current is switched on in the circuit, and the current flows to the joint of the P-type element from the N-type element to absorb heat to form a cold end; the junction from the P-type element to the N-type element releases heat to become the hot end. The magnitude of the heat absorption and heat release is determined by the magnitude of the current and the number of pairs of elements of the semiconductor material N, P, and the following three points are the thermoelectric effect of thermoelectric cooling.

Semiconductor refrigeration chip is in one eight two years german seebeck discovery, when two different conductors are connected, if two connection points keep different temperature difference, a thermoelectromotive force is generated in the conductor: ES ═ S · Δ T. In the formula: ES is the thermoelectromotive force, S is the thermoelectromotive force rate (Seebeck coefficient), and DeltaT is the temperature difference between the junctions.

In one eight three four years, the french peltier device found the opposite effect of the seebeck effect, i.e. when current flows through two different conductors forming a junction, heat release and heat absorption occur at the junction, the magnitude of the heat release or heat absorption being determined by the magnitude of the current. Wherein, Q pi is exothermic or endothermic power, pi is a proportionality coefficient called Peltier coefficient, I is working current, a is thermoelectric power, and Tc is cold junction temperature.

In addition, the Thomson effect is also known, that is, when an electric semiconductor refrigeration sheet flow flows through a conductor with a temperature gradient, the conductor emits or absorbs heat in addition to Joule heat generated by the resistance of the conductor, and the heat emission or absorption between two points of the conductor with a temperature difference DeltaT is Q tau I DeltaT, Q tau is the heat emission or absorption power, tau is the Thomson coefficient, I is the working current, and DeltaT is the temperature gradient.

The theory above is that until the fifties of the last century, semiconductor research institute of Su Union academy of sciences, about the semiconductor of the Fei universities, has made a lot of research, and in one nine-five-four years, research results have been published, which indicate that the bismuth telluride compound solid solution has good refrigeration effect, which is the earliest and most important thermoelectric semiconductor material, and is one of the main components of semiconductor materials in the thermoelectric refrigeration so far. After the theory of flying is practically applied, a great number of scholars research the figure of merit of semiconductor refrigeration materials in the sixties to reach a considerable level and obtain large-scale application, namely the current semiconductor refrigeration piece.

In China, the semiconductor refrigeration technology starts in the late 50 s and early 60 s, and is one of the earlier research units internationally, in the middle 60 s, the performance of the semiconductor material reaches the international level, and the semiconductor refrigeration technology is a step in the development of the semiconductor refrigeration chip in China from the late 60 s to the early 80 s.

In the meantime, the figure of merit of the semiconductor refrigeration material is improved, and the application field of the semiconductor refrigeration material is widened. The semiconductor research institute of Chinese academy of sciences invests a great deal of manpower and material resources to obtain the semiconductor refrigerating sheet, so that the conventional production of the semiconductor refrigerating sheet and the development and application of the two products thereof are available.

However, it is not easy to increase the figure of merit of the semiconductor wafer, which not only needs to find an alloy material with good electrical conductivity, but also has poor thermal conductivity because the hot side and the cold side of the semiconductor wafer are very close to each other during operation, and the heat is easily transferred from the hot side to the cold side due to the temperature difference. However, since the semiconductor cooling plate has good heat conductivity and good electrical conductivity, the cooling efficiency is lower when the temperature difference is larger, because the heat transfer power is derived from the temperature difference, and the heat transfer speed is higher when the temperature difference is larger. Since the excellent conductive materials all have excellent heat-conducting performance, it is obviously very difficult to obtain a semiconductor material with low resistance and high heat resistance, that is, the semiconductor material with low resistance and high heat resistance cannot be obtained at the same time, and the contradiction can be solved only by adept heat transfer technical means. Therefore, the semiconductor wafer is not suitable for overlarge temperature difference during working, measures must be taken to take away heat at the hot side of the semiconductor wafer as soon as possible, and the cold quantity at the cold side of the semiconductor wafer is taken away, so that the temperature difference is reduced, and the efficiency of refrigerating and heating is greatly improved.

Nowadays, the optimal values of semiconductor cooling and heating and semiconductor thermoelectric power generation materials are continuously improved, so that the application problem is better, and even if the optimal values of semiconductors are improved to ideal values, the semiconductor cooling and heating and semiconductor thermoelectric power generation materials are improved with little effort if no good related application technology exists.

From the current relevant data show: the semiconductor figure of merit is greatly improved from 1.2 to about 3.5 in the past, the refrigeration efficiency of the semiconductor thermoelectric power generation is even higher than that of the traditional compressor refrigeration mode, the semiconductor thermoelectric power generation can be completely comparable to thermal power generation and even higher than that of the current thermal power generation, the semiconductor thermoelectric power generation has no problem of environmental pollution, and the semiconductor thermoelectric power generation is not like nuclear power generation and has no worry of nuclear leakage. Because the natural temperature difference is everywhere, such as: the temperature difference between deep sea and air, the temperature difference between morning and evening, and the like. The cold or heat energy in nature can be stored, and the temperature difference in space and time can be utilized.

However, while how the semiconductor refrigeration and heating and thermoelectric generation exert the advantages of the material figure of merit, a more advanced heat exchange technical means is needed to be adopted to reduce the temperature difference between the two sides of the semiconductor in the refrigeration and heating processes, namely, the cold quantity and the heat quantity on the two sides of the semiconductor are taken away quickly; in the thermoelectric power generation, on the contrary, the power generation efficiency is higher when the temperature difference is larger, and the problem that how to maximize the temperature difference on the two sides of the semiconductor chip exists, and the cooling is the problem of how to output heat and cold quickly is solved by using the technology that the temperature difference is small when the semiconductor cooling and heating belong to a heat output type, or the temperature difference is large when the semiconductor thermoelectric power generation belongs to a heat input type. The semiconductor thermoelectric power generation is formed by inputting heat to one side of a semiconductor and inputting cold to the other side of the semiconductor, and is closely related to a high-efficiency heat transfer technology. At present, the semiconductor merit is greatly broken through, but the related heat transfer technology is not kept up with the semiconductor merit, and is still in an immature stage.

However, it has been seen that related scientific and technological workers try to adopt water to directly cool the hot side of the semiconductor, and the cold side of the semiconductor adopts a fin fan to blow out cold air to provide cold energy to users, so that the temperature difference between the two sides of the semiconductor can be reduced, and the purpose of high-efficiency refrigeration can be achieved to a certain extent.

Then, have and not have lower cost scheme, can realize that the semiconductor refrigeration is than still economical woollen of compressor, the answer is present, the utility model discloses the technical scheme that the people provided greatly improves heat transfer efficiency with the help of current semiconductor figure of merit, adopts the low-cost high-efficient heat transfer technique that more fits the reality, and we know that the heat transfer capacity of water is more than 66 times of air, so, the utility model discloses this technical scheme that the people provided is exactly that the semiconductor both sides all adopt and carry out heat exchange with water, and not one side.

Therefore, the problem that the heat transfer surface of the semiconductor wafer is too narrow is avoided, the bottleneck that the heat transfer fins are difficult to expand is broken through, the heat transfer fins are limited and cannot have more contact areas with air to exchange heat, more cold energy cannot be taken away, and the temperature difference between the two sides of the semiconductor wafer cannot be reduced to a more ideal state due to too low cold side temperature of the semiconductor wafer.

However, water is adopted on two sides as heat transfer media, so that the problem that the heat transfer area of the cold side of the semiconductor is insufficient due to direct heat exchange with air is solved, the problem that the heat exchange area is insufficient is solved, the method can also take away the heat on the hot side of the semiconductor and the cold on the cold side of the semiconductor, and the heat and the cold are taken into a heat exchanger with enough heat exchange area to be sufficiently exchanged with the air. Compared with the forced convection heat exchange of air only by adopting the fin heat conduction.

At present, relevant prior art has obtained the optimal design of certain degree, and its heat transfer volume still is fairly limited, is not enough the maximize to reduce the difference in temperature of semiconductor both sides, the utility model discloses the technical scheme that the people provided has broken through the too narrow and small and fin can't develop the bottleneck of expansion again of semiconductor heat transfer area. Similarly, to semiconductor thermoelectric generation, the utility model discloses the technical scheme that the people provided breaks through the heat transfer bottleneck of being controlled from another angle, has taken the mode against the current to realize average difference in temperature maximize to the purpose of semiconductor thermoelectric generation efficiency maximize has been realized.

Additionally, the utility model discloses the technical scheme that the people provided has still adopted the vacuum phonon heat transfer technique in order to seek high-efficient heat transfer and realize the semiconductor refrigeration and heat efficiency maximize. In recent years, scientific workers have found that when the temperature difference between the cold heat source and the hot heat source is as high as 25 ℃, the vacuum phonon heat transfer makes the temperature of the final template of the two films almost different with the shortening of the distance d between the cold heat plate and the hot heat plate. That is, as long as the distance is close enough, heat can be transferred from the high temperature film to the low temperature film by passing through the vacuum. In this process, heat transfer caused by heat radiation is not 4% at all. Thus, the investigators concluded that the dominant heat transfer mechanism was vacuum phonon heat transfer.

A theoretical calculation model for calculating the heat transfer of the vacuum phonons is provided according to quantum mechanics, and the result is found to be very consistent with data measured in experiments. Thus, a fourth heat transfer method is widely used, and another heat transfer method is created after heat conduction, heat convection and heat radiation. Therefore, the semiconductor wafer cooling and heat transfer is realized by vacuum heat transfer, so that the temperature difference between the cold side and the hot side is reduced to improve the cooling efficiency and the heating efficiency, and the method has profound significance.

While in the more fundamental field of scientific research, the discovery of vacuum phonon heat transfer will help us to further understand the natural wonderful. At the most microscopic level, the discovery of the heat transfer mechanism brings the heat transfer science from the macroscopic scale and the microscopic scale further to the quantum scale; at the most macroscopic level, some large-scale heat transfer in the universe may also be related to the mechanism, and semiconductor refrigeration and semiconductor thermoelectric generation can also be applied by means of the vacuum phonon heat transfer theory, and the quantum theory can also be adopted to explain the semiconductor wafer heat transfer mechanism.

SUMMERY OF THE UTILITY MODEL

The utility model provides a technical problem provide an bayonet heat transfer device based on semiconductor wafer to solve among the prior art technical problem that the unable high-efficient refrigeration of semiconductor heats or lacks thermoelectric generation's technical design.

In order to solve the above technical problem, the present invention provides an insert type heat transfer device based on semiconductor wafer, which comprises at least one heat transfer element and two fluid containers; the heat transfer element comprises a semiconductor wafer and two heat conduction plates, and one end of each heat conduction plate clamps the semiconductor wafer;

the other end of one of the heat-conducting plates is inserted into one of the fluid containers, and the other end of the other heat-conducting plate is inserted into the other fluid container;

two fluid containers respectively pass through the two fluid containers, wherein the two fluid containers have temperature difference and flow directions are opposite;

the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer;

or the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are respectively connected with an electric load so as to realize the thermoelectric power generation between the first end and the second end of the semiconductor wafer.

Preferably, the heat conducting plate is L-shaped as a whole.

Preferably, the other end of the heat conducting plate is provided with a fluid channel; the fluid channel is a single-hole fluid channel or a porous fluid channel.

Preferably, the other end of the heat-conducting plate is rectangular or circular.

Preferably, the heat transfer element further comprises at least one heat dissipation fin, and the heat dissipation fin is arranged at the other end of the heat conduction plate; the heat dissipation fins are positioned on one side of the fluid channel, which faces away from the semiconductor wafer; or the heat dissipation fin is positioned on one side of the fluid channel close to the semiconductor wafer.

Preferably, the fluid container is provided with an insertion hole, and the other end of the heat conducting plate is inserted into the fluid container from the insertion hole; and an input pipe and an output pipe are respectively arranged at two ends of the fluid container.

Preferably, the fluid container is a cuboid structure, a cylindrical structure, a semi-cylindrical structure or a combined structure of the semi-cylindrical structure and the cuboid.

In order to solve the technical problem, the utility model also provides an air conditioner assembly, which comprises a heat exchange device, a user terminal, a first circulating pump, a second circulating pump and the plug-in heat transfer device; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with the direct current power supply device;

the first circulating pump is used for feeding a fluid in one fluid container back to the fluid channel after being input into the heat exchange device;

the second circulation pump is used for feeding another fluid in another fluid container back to the fluid channel after the other fluid is input to the user tail end.

In order to solve the technical problem, the utility model also provides a refrigerating device, which comprises a first circulating pump, a second circulating pump, a heat dissipation assembly, a coiled pipe assembly and the plug-in heat transfer device; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with the direct current power supply device;

the first circulating pump is used for sending a fluid in one fluid container to the heat dissipation assembly and then sending the fluid back to the original fluid container;

the second circulating pump is used for sending another fluid in another fluid container to the coiled pipe assembly and then sending the fluid back to the fluid container.

In order to solve the technical problem, the utility model also provides a thermoelectric power generation device, which comprises a first circulating pump, a second circulating pump, a cooling device, a heat source, a heating heat exchanger and the plug-in heat transfer device; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are respectively connected with the electric load;

the first circulating pump is used for feeding a fluid in one fluid container into the heating heat exchanger and then feeding the fluid back to the fluid container;

the heat source is used for providing heat for the heating heat exchanger;

the second circulating pump is used for returning the other fluid in the other fluid container to the fluid container after the other fluid in the other fluid container is input into the cooling device.

In the semiconductor wafer-based plug-in heat transfer device provided by the utility model, the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with the direct current power supply device, so as to realize the heat transfer between the first end surface and the second end surface of the semiconductor wafer; therefore, the semiconductor wafer is utilized between the fins of the two heat exchangers, high-efficiency heat transfer is realized, and high-efficiency refrigeration and heating are realized.

Or the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are respectively connected with an electric load so as to realize the thermoelectric power generation between the first end and the second end of the semiconductor wafer. Therefore, the temperature difference between two end faces of the semiconductor is innovatively utilized to carry out temperature difference power generation, and the utilization rate of energy is greatly improved.

Drawings

FIG. 1 is a schematic structural view of a preferred embodiment of an insert heat transfer device provided by the present invention;

FIG. 2 is a schematic structural view of a first embodiment of the heat transfer element shown in FIG. 1;

FIG. 3 is a schematic structural view of a second embodiment of the heat transfer element shown in FIG. 1;

FIG. 4 is a schematic structural view of a third embodiment of the heat transfer element shown in FIG. 1;

FIG. 5 is a schematic structural view of a first embodiment of the fluid container shown in FIG. 1;

FIG. 6 is a schematic structural view of a second embodiment of the fluid container shown in FIG. 1;

FIG. 7 is a schematic structural view of a third embodiment of the fluid container shown in FIG. 1;

FIG. 8 is a schematic diagram illustrating the design of a preferred embodiment of an air conditioning assembly according to the present invention;

fig. 9 is a schematic design diagram of a preferred embodiment of the refrigeration unit provided by the present invention;

fig. 10 is a schematic design diagram of a preferred embodiment of the thermoelectric power generation device according to the present invention.

The reference numbers illustrate:

21-plug-in heat transfer, 22-electrical load, 23-wire, dc power supply (not shown), heat transfer element (not numbered);

1-semiconductor chip, 3/4-heat conducting plate, 9-fluid container, 5/7-input tube, 6/8-output tube;

2/10-fluid channels, 11-fins;

12-an insertion hole;

13-heat exchange device, 16-user terminal;

14/17/26-first circulation pump, 15/20/28-second circulation pump;

18-heat dissipation assembly, 19-serpentine tube assembly;

24-heating heat exchanger, 25-heat source, 27-cooling device.

The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

It should be noted that all the directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is changed accordingly.

The utility model provides an insert heat transfer device based on semiconductor wafer. For convenience of description, the insertion heat transfer device based on the semiconductor wafer of the present invention may be referred to as a heat transfer device for short.

Referring to fig. 1, the present invention provides an insert type heat transfer device based on semiconductor wafers, which comprises at least one heat transfer element and two fluid containers 9; the heat transfer element comprises a semiconductor wafer 1 and two heat conduction plates 3, and one ends of the two heat conduction plates 3 clamp the semiconductor wafer 1;

the other end of one of the heat-conducting plates 3 is inserted into one of the fluid containers 9, and the other end of the other heat-conducting plate 4 is inserted into the other fluid container 9;

two fluid containers 9 respectively pass through two fluid containers which have temperature difference and flow directions opposite to each other;

the electric arm at the first end and the electric arm at the second end of the semiconductor wafer 1 are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer 1;

or the electric arm at the first end and the electric arm at the second end of the semiconductor wafer 1 are respectively connected with an electric load 22, so as to realize the thermoelectric power generation between the first end and the second end of the semiconductor wafer 1.

The utility model provides a heat transfer device's semiconductor wafer 1's refrigeration and principle of heating as follows:

the semiconductor wafer 1 is composed of a plurality of series galvanic couple stacks and parallel galvanic couple stacks, and has the same basic structural form as the existing semiconductor refrigerating sheet.

In principle, a semiconductor cooling plate is a means of heat transfer. When a thermocouple formed by connecting an N-type semiconductor material and a P-type semiconductor material passes through a current, heat transfer can be generated between the two ends, and the heat can be transferred from one end face to the other end face, so that temperature difference is generated to form a cold end and a hot end.

The first end face and the second end face of the semiconductor wafer 1, i.e., the hot end and the cold end where a temperature difference is formed, are the first end face and the second end face when the temperature of the fluid passing through one fluid container 9 is higher than the temperature of the fluid passing through the other fluid container 9.

The first end face and the second end face of the semiconductor wafer 1, i.e., the cold end and the hot end where the temperature difference is formed, are the first end face and the second end face when the temperature of the fluid passing through one fluid container 9 is lower than the temperature of the fluid passing through the other fluid container 9.

For convenience of description, the fluid with higher temperature in the two fluids is not defined as the hot fluid; the fluid with the lower temperature is cold fluid.

The utility model provides a heat transfer device's semiconductor wafer 1's thermoelectric generation's principle as follows:

seebeck effect

One eighty-two-year german seebeck found that when two different conductors are connected, if the two connections maintain different temperature differentials, a thermoelectromotive force is generated in the conductors: ES · Δ T formula: ES is a thermoelectromotive force; s is a thermoelectric power (seebeck coefficient); Δ T is the temperature difference between the junctions.

Referring to fig. 10, when the first terminal and the second terminal of the semiconductor chip 1 are connected to the electrical load 22 respectively, based on the seebeck effect principle, an electrical potential is generated between the first terminal and the second terminal of the semiconductor chip 1, and provides a voltage and a current for the electrical load 22.

In the insertion heat transfer device based on the semiconductor wafer 1, the electric arm at the first end and the electric arm at the second end of the semiconductor wafer 1 are both connected with the direct current power supply device, so as to realize the heat transfer between the first end face and the second end face of the semiconductor wafer 1; therefore, the semiconductor wafer 1 is utilized between the fins of the two heat exchangers, high-efficiency heat transfer is realized, and high-efficiency refrigeration and heating are realized.

Or the electric arm at the first end and the electric arm at the second end of the semiconductor wafer 1 are respectively connected with an electric load 22, so as to realize the thermoelectric power generation between the first end and the second end of the semiconductor wafer 1. Therefore, the temperature difference between two end faces of the semiconductor is innovatively utilized to carry out temperature difference power generation, and the utilization rate of energy is greatly improved.

In this embodiment, one end of the two heat-conducting plates 3 may hold one or more semiconductor wafers 1. The two end surfaces of the semiconductor wafer 1 clamped by one ends of the two heat conducting plates 3 are the first end surface and the second end surface of the semiconductor wafer 1, the heat transfer of the two end surfaces can adopt a vacuum phonon mode for heat transfer, and the two end surfaces and the heat conducting plates 3 can be subjected to vacuum treatment.

A thermal paste may be applied between the semiconductor wafer 1 and the thermal conductive plate 3 to enhance the thermal conductivity thereof.

And a heat insulating material can be filled between the two heat conducting plates 3 to prevent the loss of heat and cold.

An insulating material can be filled between the two fluid containers 9 to prevent the loss of heat and cold.

In this embodiment, the heat conductive plate 3 is L-shaped as a whole.

Referring to fig. 2-4, the other end of the heat conducting plate 3 is provided with a fluid channel 2; the fluid channel 10 may be a single-hole fluid channel, and the fluid channel 2 may also be a porous fluid channel.

The other end of the heat conducting plate 3 is rectangular or circular.

The heat transfer element also comprises at least one radiating fin 11, and the radiating fin 11 is arranged at the other end of the heat conducting plate 3;

the heat dissipation fins 11 are located on the side of the fluid channel 2 facing away from the semiconductor wafer 1; alternatively, the heat dissipation fins 11 are located on the side of the fluid channel 2 close to the semiconductor wafer 1.

Referring to fig. 5-7, the fluid container 9 is formed with an insertion hole 12, and the other end of the heat conductive plate 3 is inserted into the fluid container 9 through the insertion hole 12; so as to facilitate the assembly and disassembly of the heat-conducting plate 3 and the fluid container 9.

The number of the insertion holes 12 in the present embodiment is at least two.

The two ends of the fluid container 9 are respectively provided with an input pipe 5 and an output pipe 6. It will be appreciated that the arrangement of the inlet 5 and outlet 6 conduits is different for different fluid containers 9. Referring again to fig. 1, for example, the inlet pipe 7 and the outlet pipe 6 of the upper fluid container 9 are provided at the right and left ends, respectively. The inlet pipe 5 and the outlet pipe 8 of the lower fluid container 9 are provided at the left and right ends, respectively.

The fluid container 9 is of a cuboid structure, a cylindrical structure, a semi-cylindrical structure or a combined structure of the semi-cylindrical structure and the cuboid.

The utility model also provides an air conditioner subassembly.

Referring to fig. 8, the air conditioning assembly includes a heat exchanging device 13, a user terminal 16, a first circulation pump 14, a second circulation pump 15, and the plug-in heat transfer device; when the electrical arm at the first end and the electrical arm at the second end of the semiconductor wafer 1 are both connected to the dc power supply device;

the first circulation pump 14 is used for feeding a fluid in one fluid container 9 back to the fluid channel 2 after being input into the heat exchange device 13;

the second circulation pump 15 is used to feed another fluid in another fluid container 9 back to the fluid channel 2 after being fed to the user end 16.

In one embodiment, the heat exchange device 13 may be a heat sink, and the user end 16 may be a surface cooler.

In summer, the user terminal 16 is a surface air cooler, and cool air is blown out by a fan;

the second circulation pump 15 continuously pumps the refrigerant water into the user terminal 16;

the first circulation pump 14 is used for feeding a fluid in one of the fluid containers 9 back to the fluid channel 2 after being input into the heat exchanging device 13, so as to cool the hot side of the semiconductor wafer 1.

In another embodiment, the heat exchange device 13 may be a heat sink, and the user terminal 16 may also be a heat generator.

The polarity of the power source of the dc power supply device to which the semiconductor chip 1 is connected can be switched between positive and negative; the heat exchange device 13 is switched to a heat absorption device, and the user terminal 16 is switched to a heating device.

In winter, the fan blows out hot air, however, the heat exchange device 13 is used for absorbing heat of outdoor air at this moment, fluid in the heat exchange device 13 is antifreeze, and the frosting condition exists under the condition that the environmental temperature of the surface of the heat exchanger fin is very low, so that the heat exchange air volume is greatly influenced, and a defrosting device needs to be arranged, which is not repeated here.

The utility model also provides a refrigerating plant.

Referring to fig. 9, the refrigeration device includes a first circulation pump 17, a second circulation pump 20, a heat dissipation assembly 18, a coil assembly 19 and the plug-in heat transfer device 21; when the electrical arm at the first end and the electrical arm at the second end of the semiconductor wafer 1 are both connected to the dc power supply device;

the first circulating pump 17 is used for sending a fluid in one fluid container 9 to the heat dissipation assembly 18 and then sending the fluid back to the original fluid container 9;

the second circulation pump 15 is used to send another fluid in another fluid container 9 to the coiled pipe assembly 19 and then back to the fluid container 9.

The device can be the refrigerator, can be large-scale freezer again, and semiconductor refrigeration can't realize the scale in the past, because the figure of merit of semiconductor improves and heat transfer technical scheme's improvement just can realize than the compressor still economic refrigeration, the utility model discloses a semiconductor refrigeration refrigerator and semiconductor freezer equipment can be realized on the basis that heat transfer technical scheme was improved to the technology.

In this embodiment, the heat dissipation assembly 18 is a semiconductor cooling radiator fan and a heat exchanger. The coiled pipe assembly 19 is a coiled pipe cold plate surface in the refrigerator or a cold wall of a coiled pipe in the refrigeration house, of course, the cold surface or the cold wall can be a plurality of parallel flows, and a fan can be adopted to forcibly transmit cold energy to a place required by the refrigerator or the refrigeration house.

The utility model also provides a thermoelectric generation device.

Referring to fig. 10, the thermoelectric power generation device includes a first circulation pump 26, a second circulation pump 28, a cooling device 27, a heat source 25, a heating heat exchanger 24 and the plug-in heat transfer device 21; wherein, when the electrical arm of the first end and the electrical arm of the second end of the semiconductor wafer 1 are connected to the electrical load 22 respectively; it can be understood that the electrical arm of the first end and the electrical arm of the second end of the semiconductor wafer 1 are respectively connected to the electrical load 22 through the wires 23;

the first circulation pump 26 is used for feeding one fluid in one fluid container 9 back to the fluid container 9 after being input into the heating heat exchanger 24;

the heat source 25 is used for providing heat to the heating heat exchanger 24;

the second circulation pump 28 is used for feeding another fluid in another fluid container 9 back to the fluid container 9 after being fed into the cooling device 27.

The working principle of the temperature difference power generation device is as follows:

when the heat source 25 is operated, the fluid inside the heat exchanger 24 is heated to obtain heat and increase in temperature;

the fluid with the increased temperature is driven into a fluid container 9 of the heat transfer device by a first circulating pump 26 to transfer heat to the heat absorption side of the semiconductor wafer 1 through the heat conduction plate 3, and the current carriers of the semiconductor wafer 1 are converted into potential energy of electrons after acquiring molecular kinetic energy, and the potential energy of the electrons can provide direct current voltage for electrical loads and form working current.

While the cooling liquid in the other fluid container 9 of the heat transfer device increases in temperature due to the transformation of the electric current into heat; the temperature difference between both sides of the semiconductor wafer 1 becomes further small and the efficiency of carrier conversion potential energy becomes further low, so that the temperature of the side of the semiconductor wafer 1 must be lowered, and then the cooling liquid must be pumped into the cooling device 27 by the second circulation pump 28 and the heat is forcibly transferred to the air by the fan of the cooling device 27;

it is impossible to convert the heat of the heat source 25 to electric energy by one hundred percent, which is in accordance with the law of thermodynamics. Many semiconductor thermoelectric power generation cases can be generated by using the heat transfer device, which is not taken as an example.

The utility model discloses a heat and semiconductor thermoelectric generation device is heated and has been optimized with current semiconductor refrigeration the biggest difference in having optimized the heat transfer flow, both sides have all adopted water to carry out heat-conduction as the medium, the bottleneck that fin heat transfer area is not enough has been broken through, and can realize the heat transfer mode against the current, make the maximize of average difference in temperature, its heat exchange efficiency has obtained improving and has still greatly practiced thrift 1 use quantity of semiconductor wafer simultaneously, other unnecessary additional heat transfer means have been reduced, not only the energy efficiency ratio has been improved, and greatly reduced manufacturing cost and user's working costs, this technique has following apparent advantage:

1. the device of the utility model is compact in structure, the heat flux density is big, can be fit for multiple domestic appliance product and large-scale pollution-free semiconductor thermoelectric power generation equipment, perhaps the dual-purpose central air conditioning of new forms of energy.

2. The compressor does not need any refrigerant, can continuously work, has no pollution source, does not have rotating parts, does not generate a rotation effect, does not have a sliding part related to the compressor, is a solid piece, does not have vibration and noise during working, has long service life and is easy to install.

3. The semiconductor wafer 1 (semiconductor refrigerating sheet) has two functions, namely, refrigeration and heating, and the refrigeration efficiency exceeds that of a compressor and the heating efficiency also exceeds that of a heat pump. Thus, one piece may be used instead of separate heating and cooling systems.

4. The semiconductor chip 1 (semiconductor refrigerating chip) is a current transduction type chip, can realize high-precision temperature control through the control of input current, and is easy to realize remote control, program control and computer control by adding a temperature detection and control means, thereby being convenient for forming an automatic control system.

5. The thermal inertia of the semiconductor wafer 1 (semiconductor refrigerating sheet) is very small, the refrigerating and heating time is very short, and the refrigerating sheet can reach the maximum temperature difference when the power is not supplied for one minute under the condition that the heat dissipation of the hot end is good and the cold end is idle.

6. The reverse use of the semiconductor wafer 1 (semiconductor refrigeration piece) is just temperature difference power generation, and the semiconductor refrigeration piece is generally suitable for power generation in medium and low temperature regions and can realize distributed power generation.

7. The power of the single refrigerating element pair of the semiconductor wafer 1 (semiconductor refrigerating chip) is very small, but the power can be very large when the electric piles are combined and the refrigerating system is combined by the method of series connection and parallel connection of the electric piles of the same type, and large-scale refrigeration and power generation can be formed.

8. The temperature difference range of the semiconductor wafer 1 (semiconductor chilling plate) can be realized from a positive temperature of 90 ℃ to a negative temperature of 130 ℃.

Through two good heat-conducting plates 3 of L type, clamp semiconductor wafer 1 between these two good heat conductors to both sides adopt the mode of water as heat transfer medium, and semiconductor wafer 1 heat transfer face can strengthen the heat transfer effect with the help of contemporary scientific and technological achievement, the utility model discloses a can combine vacuum phonon heat transfer mode and semiconductor refrigeration wafer technique well, through good heat conduction material and thermal insulation material, hug closely the heat conduction material in the both sides of semiconductor respectively, and the combination that two heat-conducting plates 3 accompany semiconductor wafer 1 totally closed with thermal-insulated material (such as silica gel), adopt to evacuate or absorb the air technical means and make it form the vacuum state, two kinds of material combination department adopt vacuum phonon heat transfer mode to reach high-efficient heat transfer purpose, can be used for realizing semiconductor thermoelectric generation, the high-efficient refrigerated purpose of semiconductor, be used for designing semiconductor refrigerator, Semiconductor cold storage, semiconductor refrigeration and heating air conditioner, semiconductor water heater, semiconductor thermoelectric generation and other related electrical equipment.

The above is only the preferred embodiment of the present invention, not limiting the scope of the present invention, all of which are under the concept of the present invention, the equivalent structure transformation made by the contents of the specification and the drawings is utilized, or the direct/indirect application in other related technical fields is included in the patent protection scope of the present invention.

Claims (10)

1. An insert heat transfer device based on semiconductor wafers, comprising at least one heat transfer element and two fluid containers; the heat transfer element comprises a semiconductor wafer and two heat conduction plates, and one end of each heat conduction plate clamps the semiconductor wafer;

the other end of one of the heat-conducting plates is inserted into one of the fluid containers, and the other end of the other heat-conducting plate is inserted into the other fluid container;

two fluid containers respectively pass through the two fluid containers, wherein the two fluid containers have temperature difference and flow directions are opposite;

the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer;

or the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are respectively connected with an electric load so as to realize the thermoelectric power generation between the first end and the second end of the semiconductor wafer.

2. An interposed heat transfer device as claimed in claim 1, wherein said thermally conductive plate is generally L-shaped.

3. An insert heat transfer device as claimed in claim 2, wherein the heat conductive plate has a fluid passage formed at the other end thereof;

the fluid channel is a single-hole fluid channel or a porous fluid channel.

4. An interposed heat transfer device as claimed in claim 3, wherein the other end of the thermally conductive plate is rectangular or circular.

5. An interposed heat transfer device as claimed in claim 3, wherein said heat transfer element further comprises at least one heat sink fin provided at the other end of said heat conductive plate;

the heat dissipation fins are positioned on one side of the fluid channel, which faces away from the semiconductor wafer; or the heat dissipation fin is positioned on one side of the fluid channel close to the semiconductor wafer.

6. An inserted heat transfer unit as claimed in any one of claims 1 to 5, wherein the fluid container is formed with an insertion hole, and the other end of the heat conductive plate is inserted into the fluid container through the insertion hole; and an input pipe and an output pipe are respectively arranged at two ends of the fluid container.

7. An inserted heat transfer device according to claim 6, wherein the fluid container is a rectangular parallelepiped structure, a cylindrical structure, a semi-cylindrical structure or a combination of semi-cylindrical and rectangular parallelepiped structures.

8. An air conditioning assembly comprising a heat exchange unit, a user terminal, a first circulation pump, a second circulation pump, and an insert heat transfer unit according to any one of claims 1-7; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with the direct current power supply device;

the first circulating pump is used for feeding a fluid in one fluid container back to the fluid channel after being input into the heat exchange device;

the second circulation pump is used for feeding another fluid in another fluid container back to the fluid channel after the other fluid is input to the user tail end.

9. A refrigeration device comprising a first circulation pump, a second circulation pump, a heat dissipation assembly, a serpentine tube assembly, and the plug-in heat transfer device of any of claims 1-7; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with the direct current power supply device;

the first circulating pump is used for sending a fluid in one fluid container to the heat dissipation assembly and then sending the fluid back to the original fluid container;

the second circulating pump is used for sending another fluid in another fluid container to the coiled pipe assembly and then sending the fluid back to the fluid container.

10. A thermoelectric power generation device comprising a first circulation pump, a second circulation pump, a cooling device, a heat source, a heating heat exchanger, and the plug-in heat transfer device according to any one of claims 1 to 7; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are respectively connected with the electric load;

the first circulating pump is used for feeding a fluid in one fluid container into the heating heat exchanger and then feeding the fluid back to the fluid container;

the heat source is used for providing heat for the heating heat exchanger;

the second circulating pump is used for returning the other fluid in the other fluid container to the fluid container after the other fluid in the other fluid container is input into the cooling device.

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