CN111219908A

CN111219908A - Semiconductor wafer based plug-in heat transfer device and apparatus employing the same

Info

Publication number: CN111219908A
Application number: CN202010178612.5A
Authority: CN
Inventors: 刘小江; 孟湘哲; 郑亚国; 孟兵
Original assignee: Hunan Shengxin Super Energy Environmental Protection Technology Co Ltd
Current assignee: Hunan Shengxin Super Energy Environmental Protection Technology Co Ltd
Priority date: 2020-03-14
Filing date: 2020-03-14
Publication date: 2020-06-02

Abstract

The invention provides a plug-in heat transfer device based on a semiconductor wafer and equipment adopting the device. The heat transfer device comprises a heat transfer element and two fluid containers; the heat transfer element comprises a semiconductor wafer and two heat conduction plates, and the semiconductor wafer is clamped by the two heat conduction plates; the heat conducting plates are respectively inserted into the two fluid containers; two fluid containers respectively pass through two fluid containers, wherein the two fluid containers have temperature difference and flow directions are opposite; the two end arms of the semiconductor wafer are connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer; or the two end electric arms of the semiconductor wafer are respectively connected with an electric load so as to realize the temperature difference power generation between the first end and the second end of the semiconductor wafer. The heat transfer device provided by the invention can efficiently refrigerate and heat, and can realize temperature difference to generate electricity; the distributed thermoelectric power generation system can be used for refrigerator cold storages, refrigeration air conditioners and heating air conditioners, is particularly suitable for automobile air conditioners, and can also be used for distributed thermoelectric power generation.

Description

Semiconductor wafer based plug-in heat transfer device and apparatus employing the same

Technical Field

The invention relates to the technical field of thermal engineering and thermoelectricity, in particular to an inserted heat transfer device based on a semiconductor wafer and equipment adopting the device.

Background

When an N-type semiconductor material and a P-type semiconductor material are connected into a galvanic couple pair, energy transfer can be generated after direct current is switched on in the circuit, and the current flows to the joint of the P-type element from the N-type element to absorb heat to form a cold end; the junction from the P-type element to the N-type element releases heat to become the hot end. The magnitude of the heat absorption and heat release is determined by the magnitude of the current and the number of pairs of elements of the semiconductor material N, P, and the following three points are the thermoelectric effect of thermoelectric cooling.

the semiconductor refrigerating chip is discovered in Seebeck of German eight or two years, when two different conductors are connected, if two connecting points keep different temperature differences, a thermoelectromotive force is generated in the conductors, wherein ES is the thermoelectromotive force, S is the thermoelectromotive force rate (Seebeck coefficient), and △ T is the temperature difference between the connecting points.

In one eight three four years, the french peltier device found the opposite effect of the seebeck effect, i.e. when current flows through two different conductors forming a junction, heat release and heat absorption occur at the junction, the magnitude of the heat release or heat absorption being determined by the magnitude of the current. Wherein, Q pi is exothermic or endothermic power, pi is a proportionality coefficient called Peltier coefficient, I is working current, a is thermoelectric power, and Tc is cold junction temperature.

in addition, the Thomson effect is also known, that is, when an electric semiconductor refrigeration sheet flow flows through a conductor with a temperature gradient, the conductor emits or absorbs heat in addition to Joule heat generated by the resistance of the conductor, and the heat emission or absorption between two points of the conductor with a temperature difference △ T is Q tau I △ T, Q tau is the heat emission or absorption power, tau is the Thomson coefficient, I is the working current, and △ T is the temperature gradient.

The theory above is that until the fifties of the last century, semiconductor research institute of Su Union academy of sciences, about the semiconductor of the Fei universities, has made a lot of research, and in one nine-five-four years, research results have been published, which indicate that the bismuth telluride compound solid solution has good refrigeration effect, which is the earliest and most important thermoelectric semiconductor material, and is one of the main components of semiconductor materials in the thermoelectric refrigeration so far. After the theory of flying is practically applied, a great number of scholars research the figure of merit of semiconductor refrigeration materials in the sixties to reach a considerable level and obtain large-scale application, namely the current semiconductor refrigeration piece.

In China, the semiconductor refrigeration technology starts in the late 50 s and early 60 s, and is one of the earlier research units internationally, in the middle 60 s, the performance of the semiconductor material reaches the international level, and the semiconductor refrigeration technology is a step in the development of the semiconductor refrigeration chip in China from the late 60 s to the early 80 s.

In the meantime, the figure of merit of the semiconductor refrigeration material is improved, and the application field of the semiconductor refrigeration material is widened. The semiconductor research institute of Chinese academy of sciences invests a great deal of manpower and material resources to obtain the semiconductor refrigerating sheet, so that the conventional production of the semiconductor refrigerating sheet and the development and application of the two products thereof are available.

However, it is not easy to increase the figure of merit of the semiconductor wafer, which not only needs to find an alloy material with good electrical conductivity, but also has poor thermal conductivity because the hot side and the cold side of the semiconductor wafer are very close to each other during operation, and the heat is easily transferred from the hot side to the cold side due to the temperature difference. However, since the semiconductor cooling plate has good heat conductivity and good electrical conductivity, the cooling efficiency is lower when the temperature difference is larger, because the heat transfer power is derived from the temperature difference, and the heat transfer speed is higher when the temperature difference is larger. Since the excellent conductive materials all have excellent heat-conducting performance, it is obviously very difficult to obtain a semiconductor material with low resistance and high heat resistance, that is, the semiconductor material with low resistance and high heat resistance cannot be obtained at the same time, and the contradiction can be solved only by adept heat transfer technical means. Therefore, the semiconductor wafer is not suitable for overlarge temperature difference during working, measures must be taken to take away heat at the hot side of the semiconductor wafer as soon as possible, and the cold quantity at the cold side of the semiconductor wafer is taken away, so that the temperature difference is reduced, and the efficiency of refrigerating and heating is greatly improved.

Nowadays, the optimal values of semiconductor cooling and heating and semiconductor thermoelectric power generation materials are continuously improved, so that the application problem is better, and even if the optimal values of semiconductors are improved to ideal values, the semiconductor cooling and heating and semiconductor thermoelectric power generation materials are improved with little effort if no good related application technology exists.

From the current relevant data show: the semiconductor figure of merit is greatly improved from 1.2 to about 3.5 in the past, the refrigeration efficiency of the semiconductor thermoelectric power generation is even higher than that of the traditional compressor refrigeration mode, the semiconductor thermoelectric power generation can be completely comparable to thermal power generation and even higher than that of the current thermal power generation, the semiconductor thermoelectric power generation has no problem of environmental pollution, and the semiconductor thermoelectric power generation is not like nuclear power generation and has no worry of nuclear leakage. Because the natural temperature difference is everywhere, such as: the temperature difference between deep sea and air, the temperature difference between morning and evening, and the like. The cold or heat energy in nature can be stored, and the temperature difference in space and time can be utilized.

However, while how the semiconductor refrigeration and heating and thermoelectric generation exert the advantages of the material figure of merit, a more advanced heat exchange technical means is needed to be adopted to reduce the temperature difference between the two sides of the semiconductor in the refrigeration and heating processes, namely, the cold quantity and the heat quantity on the two sides of the semiconductor are taken away quickly; in the thermoelectric power generation, on the contrary, the power generation efficiency is higher when the temperature difference is larger, and the problem that how to maximize the temperature difference on the two sides of the semiconductor chip exists, and the cooling is the problem of how to output heat and cold quickly is solved by using the technology that the temperature difference is small when the semiconductor cooling and heating belong to a heat output type, or the temperature difference is large when the semiconductor thermoelectric power generation belongs to a heat input type. The semiconductor thermoelectric power generation is formed by inputting heat to one side of a semiconductor and inputting cold to the other side of the semiconductor, and is closely related to a high-efficiency heat transfer technology. At present, the semiconductor merit is greatly broken through, but the related heat transfer technology is not kept up with the semiconductor merit, and is still in an immature stage.

However, it has been seen that related scientific and technological workers try to adopt water to directly cool the hot side of the semiconductor, and the cold side of the semiconductor adopts a fin fan to blow out cold air to provide cold energy to users, so that the temperature difference between the two sides of the semiconductor can be reduced, and the purpose of high-efficiency refrigeration can be achieved to a certain extent.

The answer is that the technical scheme provided by the inventor is that the heat transfer efficiency is greatly improved by means of the current semiconductor figure of merit, a more practical low-cost high-efficiency heat transfer technology is adopted, and the heat transfer capacity of water is more than 66 times that of air, so that the technical scheme provided by the inventor is that the two sides of the semiconductor adopt heat exchange with water instead of one side.

Therefore, the problem that the heat transfer surface of the semiconductor wafer is too narrow is avoided, the bottleneck that the heat transfer fins are difficult to expand is broken through, the heat transfer fins are limited and cannot have more contact areas with air to exchange heat, more cold energy cannot be taken away, and the temperature difference between the two sides of the semiconductor wafer cannot be reduced to a more ideal state due to too low cold side temperature of the semiconductor wafer.

However, water is adopted on two sides as heat transfer media, so that the problem that the heat transfer area of the cold side of the semiconductor is insufficient due to direct heat exchange with air is solved, the problem that the heat exchange area is insufficient is solved, the method can also take away the heat on the hot side of the semiconductor and the cold on the cold side of the semiconductor, and the heat and the cold are taken into a heat exchanger with enough heat exchange area to be sufficiently exchanged with the air. Compared with the forced convection heat exchange of air only by adopting the fin heat conduction.

At present, although the related prior art obtains a certain degree of optimized design, the heat exchange amount is still quite limited, and the heat exchange amount is not enough to reduce the temperature difference on two sides of a semiconductor to the maximum, and the technical scheme provided by the inventor breaks through the bottleneck that the heat exchange area of the semiconductor is too narrow and the fins cannot be expanded. Similarly, for semiconductor thermoelectric power generation, the technical scheme provided by the inventor breaks through the bottleneck of controlled heat exchange from another angle, and adopts a counter-current mode to realize the maximization of the average temperature difference, thereby realizing the purpose of the maximization of the semiconductor thermoelectric power generation efficiency.

In addition, the technical scheme provided by the inventor also adopts a vacuum phonon heat transfer technology to seek for high-efficiency heat transfer so as to realize maximization of the semiconductor cooling and heating efficiency. In recent years, scientific workers have found that when the temperature difference between the cold heat source and the hot heat source is as high as 25 ℃, the vacuum phonon heat transfer makes the temperature of the final template of the two films almost different with the shortening of the distance d between the cold heat plate and the hot heat plate. That is, as long as the distance is close enough, heat can be transferred from the high temperature film to the low temperature film by passing through the vacuum. In this process, heat transfer caused by heat radiation is not 4% at all. Thus, the investigators concluded that the dominant heat transfer mechanism was vacuum phonon heat transfer.

A theoretical calculation model for calculating the heat transfer of the vacuum phonons is provided according to quantum mechanics, and the result is found to be very consistent with data measured in experiments. Thus, a fourth heat transfer method is widely used, and another heat transfer method is created after heat conduction, heat convection and heat radiation. Therefore, the semiconductor wafer cooling and heat transfer is realized by vacuum heat transfer, so that the temperature difference between the cold side and the hot side is reduced to improve the cooling efficiency and the heating efficiency, and the method has profound significance.

While in the more fundamental field of scientific research, the discovery of vacuum phonon heat transfer will help us to further understand the natural wonderful. At the most microscopic level, the discovery of the heat transfer mechanism brings the heat transfer science from the macroscopic scale and the microscopic scale further to the quantum scale; at the most macroscopic level, some large-scale heat transfer in the universe may also be related to the mechanism, and semiconductor refrigeration and semiconductor thermoelectric generation can also be applied by means of the vacuum phonon heat transfer theory, and the quantum theory can also be adopted to explain the semiconductor wafer heat transfer mechanism.

Disclosure of Invention

The invention provides an insertion type heat transfer device based on a semiconductor wafer, and aims to solve the technical problems that a semiconductor cannot be efficiently cooled or heated or the technical design of thermoelectric power generation is lacked in the prior art.

In order to solve the above technical problems, the present invention provides an insert heat transfer device based on semiconductor wafers, comprising at least one heat transfer element and two fluid containers; the heat transfer element comprises a semiconductor wafer and two heat conduction plates, and one end of each heat conduction plate clamps the semiconductor wafer;

the other end of one of the heat-conducting plates is inserted into one of the fluid containers, and the other end of the other heat-conducting plate is inserted into the other fluid container;

two fluid containers respectively pass through the two fluid containers, wherein the two fluid containers have temperature difference and flow directions are opposite;

the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer;

or the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are respectively connected with an electric load so as to realize the thermoelectric power generation between the first end and the second end of the semiconductor wafer.

Preferably, the heat conducting plate is L-shaped as a whole.

Preferably, the other end of the heat conducting plate is provided with a fluid channel; the fluid channel is a single-hole fluid channel or a porous fluid channel.

Preferably, the other end of the heat-conducting plate is rectangular or circular.

Preferably, the heat transfer element further comprises at least one heat dissipation fin, and the heat dissipation fin is arranged at the other end of the heat conduction plate; the heat dissipation fins are positioned on one side of the fluid channel, which faces away from the semiconductor wafer; or the heat dissipation fin is positioned on one side of the fluid channel close to the semiconductor wafer.

Preferably, the fluid container is provided with an insertion hole, and the other end of the heat conducting plate is inserted into the fluid container from the insertion hole; and an input pipe and an output pipe are respectively arranged at two ends of the fluid container.

Preferably, the fluid container is a cuboid structure, a cylindrical structure, a semi-cylindrical structure or a combined structure of the semi-cylindrical structure and the cuboid.

In order to solve the technical problem, the invention also provides an air conditioner assembly, which comprises a heat exchange device, a user tail end, a first circulating pump, a second circulating pump and the plug-in heat transfer device; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with the direct current power supply device;

the first circulating pump is used for feeding a fluid in one fluid container back to the fluid channel after being input into the heat exchange device;

the second circulation pump is used for feeding another fluid in another fluid container back to the fluid channel after the other fluid is input to the user tail end.

In order to solve the above technical problems, the present invention further provides a refrigeration device, comprising a first circulation pump, a second circulation pump, a heat dissipation assembly, a coil pipe assembly and the plug-in heat transfer device; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with the direct current power supply device;

the first circulating pump is used for sending a fluid in one fluid container to the heat dissipation assembly and then sending the fluid back to the original fluid container;

the second circulating pump is used for sending another fluid in another fluid container to the coiled pipe assembly and then sending the fluid back to the fluid container.

In order to solve the technical problem, the invention also provides a thermoelectric power generation device, which comprises a first circulating pump, a second circulating pump, a cooling device, a heat source, a heating heat exchanger and the plug-in heat transfer device; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are respectively connected with the electric load;

the first circulating pump is used for feeding a fluid in one fluid container into the heating heat exchanger and then feeding the fluid back to the fluid container;

the heat source is used for providing heat for the heating heat exchanger;

the second circulating pump is used for returning the other fluid in the other fluid container to the fluid container after the other fluid in the other fluid container is input into the cooling device.

In the plug-in heat transfer device based on the semiconductor wafer, the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer; therefore, the semiconductor wafer is utilized between the fins of the two heat exchangers, high-efficiency heat transfer is realized, and high-efficiency refrigeration and heating are realized.

Or the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are respectively connected with an electric load so as to realize the thermoelectric power generation between the first end and the second end of the semiconductor wafer. Therefore, the temperature difference between two end faces of the semiconductor is innovatively utilized to carry out temperature difference power generation, and the utilization rate of energy is greatly improved.

Drawings

FIG. 1 is a schematic structural view of a preferred embodiment of an insert heat transfer device provided by the present invention;

FIG. 2 is a schematic structural view of a first embodiment of the heat transfer element shown in FIG. 1;

FIG. 3 is a schematic structural view of a second embodiment of the heat transfer element shown in FIG. 1;

FIG. 4 is a schematic structural view of a third embodiment of the heat transfer element shown in FIG. 1;

FIG. 5 is a schematic structural view of a first embodiment of the fluid container shown in FIG. 1;

FIG. 6 is a schematic structural view of a second embodiment of the fluid container shown in FIG. 1;

FIG. 7 is a schematic structural view of a third embodiment of the fluid container shown in FIG. 1;

FIG. 8 is a schematic diagram of the design of a preferred embodiment of an air conditioning assembly according to the present invention;

FIG. 9 is a schematic design diagram of a preferred embodiment of the refrigeration unit provided by the present invention;

FIG. 10 is a schematic diagram of the thermoelectric power generation device according to a preferred embodiment of the present invention.

The reference numbers illustrate:

21-plug-in heat transfer, 22-electrical load, 23-wire, dc power supply (not shown), heat transfer element (not numbered);

1-semiconductor chip, 3/4-heat conducting plate, 9-fluid container, 5/7-input tube and 6/8-output tube;

2/10-fluid channel, 11-radiating fin;

12-an insertion hole;

13-heat exchange device, 16-user terminal;

14/17/26-first circulation pump, 15/20/28-second circulation pump;

18-heat dissipation assembly, 19-serpentine tube assembly;

24-heating heat exchanger, 25-heat source, 27-cooling device.

The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.

The invention provides an insertion heat transfer device based on a semiconductor wafer. For convenience of description, the insertion heat transfer device based on the semiconductor wafer according to the present invention may be simply referred to as a heat transfer device.

Referring to fig. 1, the present invention provides an insert heat transfer device based on semiconductor wafers, which comprises at least one heat transfer element and two fluid containers 9; the heat transfer element comprises a semiconductor wafer 1 and two heat conduction plates 3, and one ends of the two heat conduction plates 3 clamp the semiconductor wafer 1;

the other end of one of the heat-conducting plates 3 is inserted into one of the fluid containers 9, and the other end of the other heat-conducting plate 4 is inserted into the other fluid container 9;

two fluid containers 9 respectively pass through two fluid containers which have temperature difference and flow directions opposite to each other;

the electric arm at the first end and the electric arm at the second end of the semiconductor wafer 1 are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer 1;

or the electric arm at the first end and the electric arm at the second end of the semiconductor wafer 1 are respectively connected with an electric load 22, so as to realize the thermoelectric power generation between the first end and the second end of the semiconductor wafer 1.

The principles of cooling and heating the semiconductor wafer 1 of the heat transfer device provided by the present invention are as follows:

the semiconductor wafer 1 is composed of a plurality of series galvanic couple stacks and parallel galvanic couple stacks, and has the same basic structural form as the existing semiconductor refrigerating sheet.

In principle, a semiconductor cooling plate is a means of heat transfer. When a thermocouple formed by connecting an N-type semiconductor material and a P-type semiconductor material passes through a current, heat transfer can be generated between the two ends, and the heat can be transferred from one end face to the other end face, so that temperature difference is generated to form a cold end and a hot end.

The first end face and the second end face of the semiconductor wafer 1, i.e., the hot end and the cold end where a temperature difference is formed, are the first end face and the second end face when the temperature of the fluid passing through one fluid container 9 is higher than the temperature of the fluid passing through the other fluid container 9.

The first end face and the second end face of the semiconductor wafer 1, i.e., the cold end and the hot end where the temperature difference is formed, are the first end face and the second end face when the temperature of the fluid passing through one fluid container 9 is lower than the temperature of the fluid passing through the other fluid container 9.

For convenience of description, the fluid with higher temperature in the two fluids is not defined as the hot fluid; the fluid with the lower temperature is cold fluid.

The principle of thermoelectric power generation of the semiconductor wafer 1 of the heat transfer device provided by the present invention is as follows:

seebeck effect

one eight two year old german seebeck found that when two different conductors were connected, if the two connection points maintained different temperature differences, a thermoelectromotive force was generated in the conductors, ES ═ S.

Referring to fig. 10, when the first terminal and the second terminal of the semiconductor chip 1 are connected to the electrical load 22 respectively, based on the seebeck effect principle, an electrical potential is generated between the first terminal and the second terminal of the semiconductor chip 1, and provides a voltage and a current for the electrical load 22.

In the semiconductor wafer 1-based insertion heat transfer device provided by the invention, an electric arm at a first end and an electric arm at a second end of the semiconductor wafer 1 are both connected with a direct current power supply device so as to realize heat transfer between the first end face and the second end face of the semiconductor wafer 1; therefore, the semiconductor wafer 1 is utilized between the fins of the two heat exchangers, high-efficiency heat transfer is realized, and high-efficiency refrigeration and heating are realized.

Or the electric arm at the first end and the electric arm at the second end of the semiconductor wafer 1 are respectively connected with an electric load 22, so as to realize the thermoelectric power generation between the first end and the second end of the semiconductor wafer 1. Therefore, the temperature difference between two end faces of the semiconductor is innovatively utilized to carry out temperature difference power generation, and the utilization rate of energy is greatly improved.

In this embodiment, one end of the two heat-conducting plates 3 may hold one or more semiconductor wafers 1. The two end surfaces of the semiconductor wafer 1 clamped by one ends of the two heat conducting plates 3 are the first end surface and the second end surface of the semiconductor wafer 1, the heat transfer of the two end surfaces can adopt a vacuum phonon mode for heat transfer, and the two end surfaces and the heat conducting plates 3 can be subjected to vacuum treatment.

A thermal paste may be applied between the semiconductor wafer 1 and the thermal conductive plate 3 to enhance the thermal conductivity thereof.

And a heat insulating material can be filled between the two heat conducting plates 3 to prevent the loss of heat and cold.

An insulating material can be filled between the two fluid containers 9 to prevent the loss of heat and cold.

In this embodiment, the heat conductive plate 3 is L-shaped as a whole.

Referring to fig. 2-4, the other end of the heat conducting plate 3 is provided with a fluid channel 2; the fluid channel 10 may be a single-hole fluid channel, and the fluid channel 2 may also be a porous fluid channel.

The other end of the heat conducting plate 3 is rectangular or circular.

The heat transfer element also comprises at least one radiating fin 11, and the radiating fin 11 is arranged at the other end of the heat conducting plate 3;

the heat dissipation fins 11 are located on the side of the fluid channel 2 facing away from the semiconductor wafer 1; alternatively, the heat dissipation fins 11 are located on the side of the fluid channel 2 close to the semiconductor wafer 1.

Referring to fig. 5-7, the fluid container 9 is formed with an insertion hole 12, and the other end of the heat conductive plate 3 is inserted into the fluid container 9 through the insertion hole 12; so as to facilitate the assembly and disassembly of the heat-conducting plate 3 and the fluid container 9.

The number of the insertion holes 12 in the present embodiment is at least two.

The two ends of the fluid container 9 are respectively provided with an input pipe 5 and an output pipe 6. It will be appreciated that the arrangement of the inlet 5 and outlet 6 conduits is different for different fluid containers 9. Referring again to fig. 1, for example, the inlet pipe 7 and the outlet pipe 6 of the upper fluid container 9 are provided at the right and left ends, respectively. The inlet pipe 5 and the outlet pipe 8 of the lower fluid container 9 are provided at the left and right ends, respectively.

The fluid container 9 is of a cuboid structure, a cylindrical structure, a semi-cylindrical structure or a combined structure of the semi-cylindrical structure and the cuboid.

The invention also provides an air conditioner component.

Referring to fig. 8, the air conditioning assembly includes a heat exchanging device 13, a user terminal 16, a first circulation pump 14, a second circulation pump 15, and the plug-in heat transfer device; when the electrical arm at the first end and the electrical arm at the second end of the semiconductor wafer 1 are both connected to the dc power supply device;

the first circulation pump 14 is used for feeding a fluid in one fluid container 9 back to the fluid channel 2 after being input into the heat exchange device 13;

the second circulation pump 15 is used to feed another fluid in another fluid container 9 back to the fluid channel 2 after being fed to the user end 16.

In one embodiment, the heat exchange device 13 may be a heat sink, and the user end 16 may be a surface cooler.

In summer, the user terminal 16 is a surface air cooler, and cool air is blown out by a fan;

the second circulation pump 15 continuously pumps the refrigerant water into the user terminal 16;

the first circulation pump 14 is used for feeding a fluid in one of the fluid containers 9 back to the fluid channel 2 after being input into the heat exchanging device 13, so as to cool the hot side of the semiconductor wafer 1.

In another embodiment, the heat exchange device 13 may be a heat sink, and the user end 16 may also be a heat generator.

The polarity of the power source of the dc power supply device to which the semiconductor chip 1 is connected can be switched between positive and negative; the heat exchange device 13 is switched to a heat absorption device, and the user terminal 16 is switched to a heating device.

In winter, the fan blows out hot air, however, the heat exchange device 13 is used for absorbing heat of outdoor air at this moment, fluid in the heat exchange device 13 is antifreeze, and the frosting condition exists under the condition that the environmental temperature of the surface of the heat exchanger fin is very low, so that the heat exchange air volume is greatly influenced, and a defrosting device needs to be arranged, which is not repeated here.

The invention also provides a refrigerating device.

Referring to fig. 9, the refrigeration device includes a first circulation pump 17, a second circulation pump 20, a heat dissipation assembly 18, a coil assembly 19 and the plug-in heat transfer device 21; when the electrical arm at the first end and the electrical arm at the second end of the semiconductor wafer 1 are both connected to the dc power supply device;

the first circulating pump 17 is used for sending a fluid in one fluid container 9 to the heat dissipation assembly 18 and then sending the fluid back to the original fluid container 9;

the second circulation pump 15 is used to send another fluid in another fluid container 9 to the coiled pipe assembly 19 and then back to the fluid container 9.

The device can be a refrigerator or a large-scale refrigeration house, the semiconductor refrigeration cannot be realized in scale in the past, the refrigeration which is more economical than a compressor can be realized due to the improvement of the figure of merit of the semiconductor and the improvement of the heat exchange technical scheme, and the semiconductor refrigeration refrigerator and the semiconductor refrigeration house equipment can be realized on the basis of the improvement of the heat exchange technical scheme of the patent technology.

In this embodiment, the heat dissipation assembly 18 is a semiconductor cooling radiator fan and a heat exchanger. The coiled pipe assembly 19 is a coiled pipe cold plate surface in the refrigerator or a cold wall of a coiled pipe in the refrigeration house, of course, the cold surface or the cold wall can be a plurality of parallel flows, and a fan can be adopted to forcibly transmit cold energy to a place required by the refrigerator or the refrigeration house.

The invention also provides a temperature difference power generation device.

Referring to fig. 10, the thermoelectric power generation device includes a first circulation pump 26, a second circulation pump 28, a cooling device 27, a heat source 25, a heating heat exchanger 24 and the plug-in heat transfer device 21; wherein, when the electrical arm of the first end and the electrical arm of the second end of the semiconductor wafer 1 are connected to the electrical load 22 respectively; it can be understood that the electrical arm of the first end and the electrical arm of the second end of the semiconductor wafer 1 are respectively connected to the electrical load 22 through the wires 23;

the first circulation pump 26 is used for feeding one fluid in one fluid container 9 back to the fluid container 9 after being input into the heating heat exchanger 24;

the heat source 25 is used for providing heat to the heating heat exchanger 24;

the second circulation pump 28 is used for feeding another fluid in another fluid container 9 back to the fluid container 9 after being fed into the cooling device 27.

The working principle of the temperature difference power generation device is as follows:

when the heat source 25 is operated, the fluid inside the heat exchanger 24 is heated to obtain heat and increase in temperature;

the fluid with the increased temperature is driven into a fluid container 9 of the heat transfer device by a first circulating pump 26 to transfer heat to the heat absorption side of the semiconductor wafer 1 through the heat conduction plate 3, and the current carriers of the semiconductor wafer 1 are converted into potential energy of electrons after acquiring molecular kinetic energy, and the potential energy of the electrons can provide direct current voltage for electrical loads and form working current.

While the cooling liquid in the other fluid container 9 of the heat transfer device increases in temperature due to the transformation of the electric current into heat; the temperature difference between both sides of the semiconductor wafer 1 becomes further small and the efficiency of carrier conversion potential energy becomes further low, so that the temperature of the side of the semiconductor wafer 1 must be lowered, and then the cooling liquid must be pumped into the cooling device 27 by the second circulation pump 28 and the heat is forcibly transferred to the air by the fan of the cooling device 27;

it is impossible to convert the heat of the heat source 25 to electric energy by one hundred percent, which is in accordance with the law of thermodynamics. Many semiconductor thermoelectric power generation cases can be generated by using the heat transfer device, which is not taken as an example.

Compared with the existing semiconductor refrigerating and heating and semiconductor temperature difference power generation device, the invention has the greatest difference that the heat exchange flow is optimized, water is adopted as a medium on two sides for heat conduction, the bottleneck that the heat exchange area of fins is insufficient is broken through, a countercurrent heat exchange mode can be realized, the average temperature difference is maximized, the heat exchange efficiency is improved, the use quantity of semiconductor wafers 1 is greatly saved, other unnecessary additional heat exchange means are reduced, the energy efficiency ratio is improved, the production cost and the user operation cost are greatly reduced, and the technology has the following remarkable advantages:

1. the device has compact structure and high heat flux density, and can be suitable for various household appliance products, large pollution-free semiconductor temperature difference power generation equipment or new energy dual-purpose central air conditioners.

2. The compressor does not need any refrigerant, can continuously work, has no pollution source, does not have rotating parts, does not generate a rotation effect, does not have a sliding part related to the compressor, is a solid piece, does not have vibration and noise during working, has long service life and is easy to install.

3. The semiconductor wafer 1 (semiconductor refrigerating sheet) has two functions, namely, refrigeration and heating, and the refrigeration efficiency exceeds that of a compressor and the heating efficiency also exceeds that of a heat pump. Thus, one piece may be used instead of separate heating and cooling systems.

4. The semiconductor chip 1 (semiconductor refrigerating chip) is a current transduction type chip, can realize high-precision temperature control through the control of input current, and is easy to realize remote control, program control and computer control by adding a temperature detection and control means, thereby being convenient for forming an automatic control system.

5. The thermal inertia of the semiconductor wafer 1 (semiconductor refrigerating sheet) is very small, the refrigerating and heating time is very short, and the refrigerating sheet can reach the maximum temperature difference when the power is not supplied for one minute under the condition that the heat dissipation of the hot end is good and the cold end is idle.

6. The reverse use of the semiconductor wafer 1 (semiconductor refrigeration piece) is just temperature difference power generation, and the semiconductor refrigeration piece is generally suitable for power generation in medium and low temperature regions and can realize distributed power generation.

7. The power of the single refrigerating element pair of the semiconductor wafer 1 (semiconductor refrigerating chip) is very small, but the power can be very large when the electric piles are combined and the refrigerating system is combined by the method of series connection and parallel connection of the electric piles of the same type, and large-scale refrigeration and power generation can be formed.

8. The temperature difference range of the semiconductor wafer 1 (semiconductor chilling plate) can be realized from a positive temperature of 90 ℃ to a negative temperature of 130 ℃.

The invention relates to a vacuum phonon heat transfer mode and a semiconductor refrigeration wafer technology, wherein a semiconductor wafer 1 is clamped between two good heat conducting bodies through two good L-shaped heat conducting plates 3, the two sides of the heat conducting plates are in a mode of taking water as a heat transfer medium, and the heat transfer surface of the semiconductor wafer 1 can enhance the heat transfer effect by means of modern scientific and technological achievements Semiconductor cold storage, semiconductor refrigeration and heating air conditioner, semiconductor water heater, semiconductor thermoelectric generation and other related electrical equipment.

The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims

1. An insert heat transfer device based on semiconductor wafers, comprising at least one heat transfer element and two fluid containers; the heat transfer element comprises a semiconductor wafer and two heat conduction plates, and one end of each heat conduction plate clamps the semiconductor wafer;

2. An interposed heat transfer device as claimed in claim 1, wherein said thermally conductive plate is generally L-shaped.

3. An insert heat transfer device as claimed in claim 2, wherein the heat conductive plate has a fluid passage formed at the other end thereof;

the fluid channel is a single-hole fluid channel or a porous fluid channel.

4. An interposed heat transfer device as claimed in claim 3, wherein the other end of the thermally conductive plate is rectangular or circular.

5. An interposed heat transfer device as claimed in claim 3, wherein said heat transfer element further comprises at least one heat sink fin provided at the other end of said heat conductive plate;

the heat dissipation fins are positioned on one side of the fluid channel, which faces away from the semiconductor wafer; or the heat dissipation fin is positioned on one side of the fluid channel close to the semiconductor wafer.

6. An inserted heat transfer unit as claimed in any one of claims 1 to 5, wherein the fluid container is formed with an insertion hole, and the other end of the heat conductive plate is inserted into the fluid container through the insertion hole; and an input pipe and an output pipe are respectively arranged at two ends of the fluid container.

7. The semiconductor wafer-based insertable heat transfer device of claim 6, wherein the fluid container is a rectangular parallelepiped structure, a cylindrical structure, a semi-cylindrical structure, or a combination of semi-cylindrical and rectangular parallelepiped structures.

8. An air conditioning assembly comprising a heat exchange unit, a user terminal, a first circulation pump, a second circulation pump, and an insert heat transfer unit according to any one of claims 1-7; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with the direct current power supply device;

9. A refrigeration device comprising a first circulation pump, a second circulation pump, a heat dissipation assembly, a serpentine tube assembly, and the plug-in heat transfer device of any of claims 1-7; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are both connected with the direct current power supply device;

10. A thermoelectric power generation device comprising a first circulation pump, a second circulation pump, a cooling device, a heat source, a heating heat exchanger, and the plug-in heat transfer device according to any one of claims 1 to 7; when the electric arm at the first end and the electric arm at the second end of the semiconductor wafer are respectively connected with the electric load;

the heat source is used for providing heat for the heating heat exchanger;