CN211555931U - Semiconductor light-emitting diode module - Google Patents
Semiconductor light-emitting diode module Download PDFInfo
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- CN211555931U CN211555931U CN202020365626.3U CN202020365626U CN211555931U CN 211555931 U CN211555931 U CN 211555931U CN 202020365626 U CN202020365626 U CN 202020365626U CN 211555931 U CN211555931 U CN 211555931U
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Abstract
The utility model discloses a semiconductor light-emitting diode module, which comprises a ceramic substrate, wherein the ceramic substrate comprises a first substrate surface and a second substrate surface which are opposite in position, a semiconductor light-emitting diode chip emitting ultraviolet light is arranged on the first substrate surface, an annular ceramic frame is arranged on the first substrate surface, the bottom end of the ceramic frame is fixedly connected to the first substrate surface, the semiconductor light-emitting diode chip is positioned in the ceramic frame, and the upper end of the ceramic frame is connected with a quartz glass cover plate; the surface of the second substrate is provided with a Zener diode chip, and the Zener diode chip and the semiconductor light-emitting diode chip are connected with corresponding electrodes through a bonding pad and a lead. The utility model discloses think about novelty, reasonable in design, and convenient to use, at first the utility model discloses a ceramic substrate and quartz glass encapsulate, adopt organic material effectively to solve the harm that ultraviolet ray pair organosilicon adhesive material high energy radiation caused relatively, and then influence the problem of using.
Description
Technical Field
The utility model relates to a light emitting diode module technical field, in particular to semiconductor light emitting diode module.
Background
The semiconductor light emitting diode ultraviolet (UV LED) light emission wavelength includes all electromagnetic radiation wavelengths between 200nm and 400nm, and can be classified into UVA (320nm to 400nm, also referred to as "long-wave ultraviolet"), UVB (285nm to 320nm, also referred to as "medium-wave ultraviolet"), and UVC (200nm to 285nm, also referred to as "short-wave ultraviolet").
The semiconductor light emitting diode ultraviolet (UV LED) short wave ultraviolet UVC has the functions of sterilization and disinfection. The sterilization effect of ultraviolet (UV LED) UVC of a semiconductor light-emitting diode on bacteria and viruses is generally completed within a few seconds, and the sterilization rate is high and pollution is avoided. Therefore, semiconductor light emitting diode ultraviolet (UV LED) is widely used in the sterilization and disinfection market.
The ultraviolet light-emitting diode is adopted to effectively kill virus, but the existing semiconductor light-emitting diode is packaged by organic materials, such as silica gel, and the problems of aging and embrittlement, thermal expansion coefficient change, organic silica gel thermal stress change and organic silica gel moisture and oxygen permeation caused by high-energy radiation of the silica gel under the condition of using ultraviolet rays, so that the packaging air tightness is poor, and the use is influenced.
SUMMERY OF THE UTILITY MODEL
In view of the above problems in the prior art, the present invention provides a semiconductor light emitting diode module, which has the following technical solutions:
a semiconductor light-emitting diode module comprises a ceramic substrate, wherein the ceramic substrate comprises a first substrate surface and a second substrate surface which are opposite in position, a semiconductor light-emitting diode chip emitting ultraviolet light is arranged on the first substrate surface, an annular ceramic frame is arranged on the first substrate surface, the bottom end of the ceramic frame is fixedly connected to the first substrate surface, the semiconductor light-emitting diode chip is located in the ceramic frame, and the upper end of the ceramic frame is connected with a quartz glass cover plate; and the surface of the second substrate is provided with a Zener diode chip, and the Zener diode chip and the semiconductor light-emitting diode chip are connected with corresponding electrodes through a bonding pad and a lead.
Further, the ceramic substrate is an aluminum nitride ceramic substrate.
Further, the ceramic frame is an aluminum nitride ceramic frame and is connected to the ceramic substrate by welding.
Further, a metal coating is arranged on the surface of the quartz glass cover plate.
Further, the metal coating on the surface of the quartz glass cover plate is a silver coating.
Further, the glass cover plate is fixed on the ceramic frame through welding, and the welding metal is tin paste or gold-tin alloy.
Further, the inner wall upper end border of pottery frame forms the bayonet socket, just the glass apron is embedded in the bayonet socket, the upper surface of glass apron with the upper surface parallel and level of pottery frame.
Has the advantages that: the utility model discloses think about novelty, reasonable in design, and convenient to use, at first the utility model discloses a ceramic substrate and quartz glass encapsulate, adopt organic material effectively to solve the harm that ultraviolet ray pair organosilicon adhesive material high energy radiation caused relatively, and then influence the problem of using.
Drawings
Fig. 1 is a schematic view of an arrangement structure according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of the present invention at a viewing angle.
Detailed Description
The invention will be further explained with reference to the following figures and examples:
referring to fig. 1 and 2, a semiconductor light emitting diode module includes a ceramic substrate 1, the ceramic substrate 1 includes a first substrate surface 1a and a second substrate surface 1b opposite to each other, a semiconductor light emitting diode chip 2 emitting ultraviolet light is disposed on the first substrate surface 1a, an annular ceramic frame 3 is disposed on the first substrate surface 1a, a bottom end of the ceramic frame 3 is fixedly connected to the first substrate surface 1a, the semiconductor light emitting diode chip 2 is disposed inside the ceramic frame 3, and an upper end of the ceramic frame 3 is connected to a quartz glass cover plate 4; the second substrate surface 1b is provided with a Zener diode chip, and the Zener diode chip and the semiconductor light emitting diode chip 2 are connected with corresponding electrodes through a bonding pad and a lead.
The utility model discloses an among the basic scheme, adopt ceramic substrate 1 as the base plate for install and set up semiconductor emitting diode chip 2, semiconductor emitting diode chip 2 is used for sending ultraviolet light, utilizes the ultraviolet ray to disinfect when specifically using. The frame and the space formed by the ceramic substrate 1 and the ceramic frame 3 are used for sealing the semiconductor light-emitting diode chip 2, play a role in protection, and meanwhile, the quartz glass cover plate 4 is used as a cover plate of the end part, so that the light can be transmitted without influencing the emission of ultraviolet rays. Compared with the prior art which adopts organic materials, the problem of damage caused by ultraviolet irradiation can be avoided.
Further, the ceramic substrate 1 is an aluminum nitride ceramic substrate. The ceramic substrate 1 is an aluminum nitride ceramic substrate, which is beneficial to connection in a welding mode.
Further, the ceramic frame 3 is an aluminum nitride ceramic frame, and is connected to the ceramic substrate 1 by soldering.
Further, the surface of the quartz glass cover plate 4 is provided with a metal coating. The quartz glass cover plate 4 is provided with a metal coating for facilitating welding.
Further, the metal coating on the surface of the quartz glass cover plate 4 is a silver coating. And the silver coating is adopted, so that the oxidation resistance is strong. As shown in fig. 1, a silver coating 5 is provided on the quartz glass cover plate 4 by printing technology, and the arrangement shape of the silver coating 5 is determined according to the shape of the ceramic frame 3 so as to match the shape of the ceramic frame 3.
Further, the glass cover plate 4 is fixed to the ceramic frame 3 by soldering, and the soldering metal is solder paste or gold-tin alloy.
Further, the bayonet socket is formed at the inner wall upper end border of ceramic frame 3, and glass apron 4 imbeds in the bayonet socket, and the upper surface of glass apron 4 is parallel and level with the upper surface of ceramic frame 3. In the limited scheme, a specific structural form of the ceramic frame 3 and the glass cover plate 4 is given.
The foregoing has described in detail preferred embodiments of the present invention. It should be understood that numerous modifications and variations can be devised by those skilled in the art in light of the teachings of the present invention without undue experimentation. Therefore, the technical solutions that can be obtained by a person skilled in the art through logic analysis, reasoning or limited experiments based on the prior art according to the concepts of the present invention should be within the scope of protection defined by the claims.
Claims (7)
1. The semiconductor light-emitting diode module is characterized by comprising a ceramic substrate (1), wherein the ceramic substrate (1) comprises a first substrate surface (1a) and a second substrate surface (1b) which are opposite in position, a semiconductor light-emitting diode chip (2) emitting ultraviolet light is arranged on the first substrate surface (1a), an annular ceramic frame (3) is arranged on the first substrate surface (1a), the bottom end of the ceramic frame (3) is fixedly connected to the first substrate surface (1a), the semiconductor light-emitting diode chip (2) is positioned inside the ceramic frame (3), and the upper end of the ceramic frame (3) is connected with a quartz glass cover plate (4); the surface (1b) of the second substrate is provided with a Zener chip, and the Zener chip and the semiconductor light-emitting diode chip (2) are connected with corresponding electrodes through a bonding pad and a lead.
2. The semiconductor light-emitting diode module as claimed in claim 1, characterized in that the ceramic substrate (1) is an aluminum nitride ceramic substrate.
3. The semiconductor light emitting diode module according to claim 2, wherein the ceramic frame (3) is an aluminum nitride ceramic frame and is connected to the ceramic substrate (1) by soldering.
4. A semiconductor light-emitting diode module according to claim 3, characterized in that the surface of the quartz glass cover plate (4) is provided with a metal coating.
5. The semiconductor light-emitting diode module according to claim 4, characterized in that the metal coating on the surface of the quartz glass cover plate (4) is a silver coating.
6. The semiconductor light emitting diode module according to claim 5, wherein the glass cover plate (4) is fixed to the ceramic frame (3) by soldering, and the soldering metal is solder paste or gold-tin alloy.
7. The semiconductor light emitting diode module as claimed in claim 6, wherein a bayonet is formed on the upper edge of the inner wall of the ceramic frame (3), and the glass cover plate (4) is inserted into the bayonet, and the upper surface of the glass cover plate (4) is flush with the upper surface of the ceramic frame (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020365626.3U CN211555931U (en) | 2020-03-21 | 2020-03-21 | Semiconductor light-emitting diode module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020365626.3U CN211555931U (en) | 2020-03-21 | 2020-03-21 | Semiconductor light-emitting diode module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211555931U true CN211555931U (en) | 2020-09-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020365626.3U Active CN211555931U (en) | 2020-03-21 | 2020-03-21 | Semiconductor light-emitting diode module |
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| Country | Link |
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| CN (1) | CN211555931U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113675316A (en) * | 2021-07-05 | 2021-11-19 | 深圳大道半导体有限公司 | UV-LED device and manufacturing method thereof |
-
2020
- 2020-03-21 CN CN202020365626.3U patent/CN211555931U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113675316A (en) * | 2021-07-05 | 2021-11-19 | 深圳大道半导体有限公司 | UV-LED device and manufacturing method thereof |
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