CN108123023A - A kind of deep ultraviolet LED encapsulation structure and preparation method thereof - Google Patents
A kind of deep ultraviolet LED encapsulation structure and preparation method thereof Download PDFInfo
- Publication number
- CN108123023A CN108123023A CN201810090516.8A CN201810090516A CN108123023A CN 108123023 A CN108123023 A CN 108123023A CN 201810090516 A CN201810090516 A CN 201810090516A CN 108123023 A CN108123023 A CN 108123023A
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- Prior art keywords
- ultraviolet led
- deep ultraviolet
- ceramics bracket
- quartz glass
- encapsulation structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The invention discloses a kind of deep ultraviolet LED encapsulation structures and preparation method thereof.Deep ultraviolet LED encapsulation structure includes ceramics bracket, deep ultraviolet LED chip, quartz glass and the coat of metal；The ceramics bracket is in bowl structure, and the deep ultraviolet LED chip is arranged on inside the ceramics bracket；The quartz glass is arranged on the upper end of the ceramics bracket, and forms airtight cavity between the ceramics bracket；The coat of metal is coated on the outer surface of the airtight cavity, but outer surface does not include the quartz glass exterior surface area of face inside airtight cavity bottom surface and airtight cavity.The present invention improves the combination power and leakproofness of quartz glass and ceramics bracket by covering the coat of metal in the outer surface of airtight cavity；Solving the problems, such as that deep ultraviolet LED encapsulation structure works long hours causes the disengaging of quartz glass and ceramics bracket, improves the reliability of deep ultraviolet LED encapsulation structure.
Description
Technical field
The invention belongs to technical field of semiconductor illumination.More particularly, to a kind of deep ultraviolet LED encapsulation structure and its system
Preparation Method.
Background technology
With the progress of LED encapsulation technologies, the LED of deep ultraviolet band progressively occurs on the market.In ultraviolet light, ripple
The light grown at 200 nanometers to 280 nanometers is referred to as deep UV.And deep ultraviolet LED is efficient, environmentally friendly, energy saving, reliable etc. because of it
Advantage has great in fields such as illumination, sterilization, medical treatment, printing, biochemistry detection, the storage of highdensity information and secure communications
Application value, these advantages are that common ultraviolet LED is incomparable.
Deep ultraviolet LED is high to encapsulating material and packaging technology requirement；With the purely inorganic encapsulation side such as tin cream or metal bonding
Formula, complex process and manufacture it is of high cost；In encapsulation process adhesion encapsulation then more succinct economy is carried out using organic material；But
The deep UV that LED chip is sent, which acts on colloid, can make colloid bonding force die down, and then adhesion is caused to be failed.For example, application
Number a kind of deep ultraviolet LED component encapsulating structure is disclosed for 201420396320.0 Chinese patent, including ceramics bracket and set
Deep ultraviolet chip on ceramics bracket pedestal die bond position, deep ultraviolet chip are connected to positive and negative electrode, ceramics bracket 1 by silver wire
Upper to be bonded with quartz lens by adhesives, there are following defects for this encapsulating structure：(1) adhesives easily absorbs UV light
Line and cause self deterioration, so as to cause LED component luminous power is low, reliability is not high；(2) encapsulating structure is more complicated, system
It is higher to make cost, poor radiation, and also ceramics bracket and quartz lens are attached using bonding way, and reliability is nor very
It is high.Therefore, how further to improve sealing effect is that this field needs the technical barrier overcome.
The content of the invention
In order to solve the above technical problems, first of the present invention is designed to provide a kind of deep ultraviolet LED encapsulation structure.This
The deep ultraviolet LED encapsulation structure of invention solves existing by improving the combination power and leakproofness of quartz glass and ceramics bracket
The technical issues of LED encapsulation structure departs from by cover board caused by working long hours and substrate in technology.
Second object of the present invention is to provide a kind of preparation method of deep ultraviolet LED encapsulation structure.
In order to achieve the above objectives, the present invention uses following technical scheme：
A kind of deep ultraviolet LED encapsulation structure, including ceramics bracket, deep ultraviolet LED chip, quartz glass and the coat of metal；
The ceramics bracket is in bowl structure, and the deep ultraviolet LED chip is arranged on inside the ceramics bracket；The stone
English glass is arranged on the upper end of the ceramics bracket, and forms airtight cavity between the ceramics bracket；
The coat of metal is coated on the outer surface of the airtight cavity, but outer surface do not include airtight cavity bottom surface and
The quartz glass exterior surface area of face inside airtight cavity.
The quartz glass exterior surface area of face refers to airtight cavity external upper edge inside airtight cavity of the present invention
Sentence outer region.
Preferably, the wave-length coverage of the deep ultraviolet LED chip is 250-280 μm of UVC wave bands, UVA wave bands 320-400nm
Or UVB wave bands 280-320nm.
Preferably, filling gas is equipped in the airtight cavity, the filling gas is filling inert gas or nitrogen.
Preferably, all or part of plating of the ceramics bracket inner surface and upper surface is useful for improving the metal of reflectivity
Layer；In order to preferably improve the reflectivity of interior ceramic surface and upper surface, it is highly preferred that the metal layer plates for gold plate or aluminium
Layer.
Preferably, the quartz glass is plate glass or glass lens；The light emitting angle of the glass lens is
120 °, 90 °, 60 ° or 30 °；According to actual demand different glass lens is selected to realize different light emitting angles.
Preferably, the coat of metal is single or multi-layer structure；For example, the multilayered structure is Ti (0.05-
The composite bed of 0.2um)/Cu (0.5-2um)/Ni (0.1-0.5um).
Preferably, the coat of metal is single-element metal or alloy metal.
Preferably, the ceramics bracket includes ceramic substrate and the frame of ceramics or metal；The ceramics bracket is one
It is body formed or the stent with high thermal conductivity coefficient to be formed is assembled by cohesive mode；For example, the ceramic substrate and pottery
Porcelain frame is fixed on by way of slurry or soldering on the ceramic substrate.
Preferably, the upper end of the quartz glass and the ceramics bracket is bonded by organic material；It is highly preferred that
The organic material is UV glue or resistance to ultraviolet glue；The present invention is in order to avoid organic material absorbs UV light and causes organic material
Aging, it is low so as to cause the bonding failure and LED chip luminous power of quartz glass and ceramics bracket, therefore select UV glue into
Row bonds.
Preferably, the deep ultraviolet LED chip can be that formal dress, upside-down mounting either flip-chip are placed on a silicon substrate simultaneously
Perpendicular to the upper bottom surface of ceramics bracket.
A kind of preparation method of deep ultraviolet LED encapsulation structure, includes the following steps：
S1:The outer surface of the airtight cavity cover the coat of metal, but outer surface include airtight cavity bottom surface and
The quartz glass exterior surface area of face inside airtight cavity；
The ceramics bracket inner surface and the part or all of covering metal layer of upper surface；
S2:The deep ultraviolet LED chip is fixed on institute by way of elargol bonding, tin cream welding or eutectic welding
It states on the bottom surface in ceramics bracket；And pass through gold thread and be connected the positive and negative grade of deep ultraviolet LED chip with ceramics bracket；
S3:By the quartz glass by UV gluing knots in the upper end of ceramics bracket, and carry out UV curings so that quartzy glass
Airtight cavity is formed between glass and ceramics bracket；Inert gas or nitrogen are filled in the airtight cavity；
S4:The surface of the quartz glass and the bottom surface of ceramic substrate are blocked using adhesive tape or cover film；Then use
The method of sputtering or chemical plating is by metal-plated in the peripheral and described ceramics bracket of the ceramics bracket and the company of quartz glass
Place is met, adhesive tape or cover film are removed after the completion of coat of metal covering, obtain deep ultraviolet LED encapsulation structure.
Preferably, deep ultraviolet LED encapsulation structure of the invention is also applied for the encapsulation of UV LED chip.Using the present invention
Encapsulating structure encapsulation UV LED chip when, the in vivo gas of closed chamber be subatmospheric rarefied air.
The present invention needs before the peripheral and described ceramics bracket of ceramics bracket and the junction metal cladding of quartz glass
The bottom surface of the surface of quartz glass and ceramic substrate is blocked with adhesive tape or cover film, is on the one hand to avoid gold
Belong to layer and be plated in the surface influence UV LED chip of quartz glass or the light extraction of deep ultraviolet LED chip；On the other hand it is to keep away
Exempt from metal layer and be plated in the bottom surface of ceramic substrate to cause the short circuit of ceramic substrate bottom electrode.
The coat of metal is coated on the outer surface of the airtight cavity by the present invention, but outer surface does not include airtight cavity bottom surface
And the quartz glass exterior surface area of airtight cavity inside face.On the one hand it is tightly to be pressed quartz glass by the coat of metal
In the upper end of ceramics bracket, avoid for a long time using the disengaging for causing quartz glass and ceramics bracket；On the other hand covering is passed through
The coat of metal can be sealed quartz glass and ceramics bracket well.
Beneficial effects of the present invention are as follows：
1st, the present invention improves quartz glass and ceramics bracket by covering the coat of metal in the outer surface of airtight cavity
With reference to power and leakproofness；Solving deep ultraviolet LED encapsulation structure and working long hours causes the disengaging of quartz glass and ceramics bracket
The problem of, improve the reliability of deep ultraviolet LED encapsulation structure.
2nd, deep ultraviolet LED encapsulation structure of the present invention by between quartz glass and ceramics bracket use UV adhesive curings, with
And inert gas or nitrogen are filled in airtight cavity；Light decay caused by reducing deep ultraviolet LED chip long-time service, improves
The reliability of deep ultraviolet LED encapsulation structure.
Description of the drawings
The specific embodiment of the present invention is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 shows ultraviolet LED encapsulating structure schematic diagram in one embodiment of the present invention, and wherein ceramics bracket is one
Molding stent.
Fig. 2 shows that the present invention is coated with the ceramic stand structure schematic diagram of aluminium layer
Fig. 3 shows ultraviolet LED encapsulating structure schematic diagram in one embodiment of the present invention, and wherein ceramics bracket is cohesive
Mode assemble what is formed.
Fig. 4 shows ultraviolet LED encapsulating structure schematic diagram in another embodiment of the present invention, and wherein quartz glass is flat
Glass sheet.
Fig. 5 shows ultraviolet LED encapsulating structure schematic diagram in another embodiment of the present invention, and wherein quartz glass is glass
Glass lens.
Wherein, 1, ceramics bracket, 2, ultraviolet or deep ultraviolet LED chip, 3, quartz glass, 4, colloid, 5, airtight cavity, 6,
The coat of metal, 7, gold thread, 8, metal layer, 9, ceramic frame, 10, ceramic matrix.
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further with reference to preferred embodiments and drawings
It is bright.It will be appreciated by those skilled in the art that specifically described content is illustrative and be not restrictive below, it should not be with this
It limits the scope of the invention.
In one embodiment of the invention, as shown in Figure 1, providing a kind of ultraviolet LED encapsulating structure, propped up including ceramics
Frame 1, ultraviolet or deep ultraviolet LED chip 2, quartz glass 3 and the coat of metal 6.Ceramics bracket 1 is in bowl structure, is to be integrally formed
The stent with high thermal conductivity coefficient；Ultraviolet or deep ultraviolet LED chip 2 formal dress by way of elargol or soldering is propped up in ceramics
The inside of frame 1, and ultraviolet or deep ultraviolet LED chip 2 positive and negative anodes are fixed on the bottom surface of ceramics bracket 1 respectively by gold thread 7；Stone
For the size of the outer diameter of English glass 3 between the internal diameter and outer diameter of ceramics bracket 1, quartz glass 3 is arranged on the upper of ceramics bracket 1
End, and logical UV glue is connected fixation with the upper end of ceramics bracket 1；Airtight cavity 5 is formed between quartz glass 3 and ceramics bracket 1；Gold
Belong to coating 6 and be covered in the outer surface of airtight cavity 5, but do not include the stone of 5 inner cavity face of 5 bottom surface of airtight cavity and airtight cavity
The outer surface of English glass 3.
The coat of metal 6 is covered in the periphery of airtight cavity 5 and the edge of upper surface by the present invention, on the one hand passes through gold
Belong to the upper end that quartz glass 3 is tightly pressed against ceramics bracket 1 by coating 6, improve the combination power of quartz glass 3 and ceramics bracket 1,
Ultraviolet LED encapsulating structure is avoided for a long time using the disengaging for causing quartz glass 3 and ceramics bracket 1；On the other hand by covering
The lid coat of metal 6 can be sealed quartz glass 3 and ceramics bracket 1 well.
In the present embodiment, as shown in Fig. 2, in order to improve ultraviolet or deep ultraviolet LED chip 2 reflectivity, in ceramics
The inner surface of stent 1 and all or part of upper surface are coated with aluminium layer；Bottom surface aluminium coated inside ceramics bracket 1 is not only favourable
In ultraviolet or deep ultraviolet LED chip 2 the reflectivity of raising, and be conducive to ultraviolet or deep ultraviolet LED chip 2 welding.
In the present embodiment, it is to assemble to be formed by cohesive mode as shown in figure 3, ceramics bracket 1 is in bowl structure
The stent with high thermal conductivity coefficient；Ceramics bracket 1 includes ceramic substrate 10 and ceramic frame 9；Ceramic frame 9 is glued by silica gel
The mode of knot is bonded on ceramic substrate 10；One layer of 0.1um Ti/1um Cu/0.3um is coated in the outer surface of airtight cavity 5
The coat of metal 6 of Ni, but do not include the appearance of the quartz glass 3 directly over 5 inner cavity of 5 bottom surface of airtight cavity and airtight cavity
Face；Again using cladding mode after connecting due to quartz glass 3 and ceramics bracket 1UV gluings, ceramics bracket 1 and quartz are added
The combination power of glass 3, and sealing effect is more preferably, adds encapsulating structure reliability, improves the service life of device.
In another embodiment of the invention, as shown in figure 4, a kind of ceramics bracket 1 of concrete structure is provided, ceramics
Stent 1 is in bowl structure, is the integrally formed stent with high thermal conductivity coefficient；The inner wall of bowl structure is in ladder shape；Quartz
Glass 3 is plate glass, and quartz glass 3 is embedded in ceramics bracket 1, and is fixed with ceramics bracket 1 by UV gluing knots.It is ultraviolet or
Formal dress is in the inside of ceramics bracket 1 by way of elargol or soldering for deep ultraviolet LED chip 2, and ultraviolet or deep ultraviolet LED core
The positive and negative anodes of piece 2 are fixed on the bottom surface of ceramics bracket 1 respectively by gold thread；It is formed between quartz glass 3 and ceramics bracket 1 closed
Cavity 5；The coat of metal 6 is covered in the outer surface of airtight cavity 5, but does not include 5 inner cavity of 5 bottom surface of airtight cavity and airtight cavity
The outer surface of the quartz glass 1 of surface.
In the present embodiment, as shown in figure 5, quartz glass 1 can be glass lens, the light emitting angle of glass lens is
120°。
In the above-mentioned embodiment of the present invention, UV LED chip or deep ultraviolet LED are placed in ceramics bracket 1
Chip can then vacuumize in airtight cavity 5 or filling gas, filling gas are generally nitrogen or inert gas, this is because
The luminance of some gases or impurity effect deep ultraviolet LED chip in air, in the airtight cavity 5 filling inert gas or
N2The light decay of deep ultraviolet LED encapsulation structure can be reduced, improves the service life of product.
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not pair
The restriction of embodiments of the present invention for those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is every to belong to this hair
The obvious changes or variations that bright technical solution is extended out is still in the row of protection scope of the present invention.
Claims (9)
1. a kind of deep ultraviolet LED encapsulation structure, which is characterized in that including ceramics bracket, deep ultraviolet LED chip, quartz glass and
The coat of metal；
The ceramics bracket is in bowl structure, and the deep ultraviolet LED chip is arranged on inside the ceramics bracket；The quartz glass
Glass is arranged on the upper end of the ceramics bracket, and forms airtight cavity between the ceramics bracket；
The coat of metal is coated on the outer surface of the airtight cavity, but outer surface does not include airtight cavity bottom surface and closed
The quartz glass exterior surface area of inside cavity face.
2. deep ultraviolet LED encapsulation structure according to claim 1, which is characterized in that the wavelength model of the deep ultraviolet LED chip
It encloses for UVC wave band 250-280nm, UVA wave band 320-400nm or UVB wave bands 280-320nm.
3. deep ultraviolet LED encapsulation structure according to claim 1, which is characterized in that filling gas is equipped in the airtight cavity
Body, the filling gas are filling inert gas or nitrogen.
4. deep ultraviolet LED encapsulation structure according to claim 1, which is characterized in that the whole of the ceramics bracket inner surface
Or part plating is useful for improving the metal layer of reflectivity.
5. deep ultraviolet LED encapsulation structure according to claim 1, which is characterized in that the quartz glass for plate glass or
Person's glass lens；The light emitting angle of the glass lens is 120 °, 90 °, 60 ° or 30 °.
6. deep ultraviolet LED encapsulation structure according to claim 1, which is characterized in that the coat of metal is single-layer or multi-layer
Structure.
7. deep ultraviolet LED encapsulation structure according to claim 4, which is characterized in that the ceramics bracket includes ceramic substrate,
And the frame of ceramics or metal；The ceramics bracket be integrally formed or assembled by cohesive mode to be formed have height
The stent of thermal conductivity factor.
8. deep ultraviolet LED encapsulation structure according to claim 1, which is characterized in that the quartz glass and the ceramics branch
The upper end of frame passes through UV glue or resistance to ultraviolet gluing knot.
9. a kind of preparation method of the deep ultraviolet LED encapsulation structure as described in claim 1-8 is any, which is characterized in that including such as
Lower step：
S1:Part or all of covering metal layer in the ceramics bracket inner surface and upper surface；
S2:The deep ultraviolet LED chip is fixed on the pottery by way of elargol bonding, tin cream welding or eutectic welding
On bottom surface in porcelain stent；And pass through gold thread and be connected the positive and negative grade of deep ultraviolet LED chip with ceramics bracket；
S3:By the quartz glass by UV gluing knots in the upper end of ceramics bracket, and carry out UV curings so that quartz glass and
Airtight cavity is formed between ceramics bracket；Inert gas or nitrogen are filled in the airtight cavity；
S4:The surface of the quartz glass and the bottom surface of ceramic substrate are blocked using adhesive tape or cover film；Then using sputtering
Or the method for chemical plating by metal-plated in the peripheral and described ceramics bracket of the ceramics bracket and the junction of quartz glass,
Adhesive tape or cover film are removed after the completion of coat of metal covering, obtain deep ultraviolet LED encapsulation structure.
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| CN201810090516.8A CN108123023A (en) | 2018-01-30 | 2018-01-30 | A kind of deep ultraviolet LED encapsulation structure and preparation method thereof |
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Cited By (12)
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| CN109103319A (en) * | 2018-08-21 | 2018-12-28 | 华中科技大学鄂州工业技术研究院 | A kind of deep ultraviolet LED encapsulation structure and its packaging method |
| CN109461794A (en) * | 2018-09-30 | 2019-03-12 | 广州市鸿利秉光电科技有限公司 | A kind of LED light and its packaging method |
| CN109786535A (en) * | 2018-12-17 | 2019-05-21 | 旭宇光电（深圳）股份有限公司 | Deep-UV light-emitting device |
| CN110197865A (en) * | 2019-05-14 | 2019-09-03 | 湖北深紫科技有限公司 | A kind of deep ultraviolet LED packaging of liquid-packing and preparation method thereof |
| CN111883631A (en) * | 2020-08-21 | 2020-11-03 | 连云港光鼎电子有限公司 | Preparation method of UVC-LED light-emitting device |
| CN112038463A (en) * | 2019-06-04 | 2020-12-04 | 佛山市国星光电股份有限公司 | Ultraviolet LED device and preparation method thereof |
| CN112786759A (en) * | 2019-11-08 | 2021-05-11 | 宁波安芯美半导体有限公司 | Light-emitting diode substrate, preparation method and light-emitting diode bulb |
| CN113036024A (en) * | 2021-05-24 | 2021-06-25 | 至芯半导体(杭州)有限公司 | Ultraviolet light-emitting diode packaging structure |
| CN113161467A (en) * | 2020-01-22 | 2021-07-23 | 斯坦雷电气株式会社 | Light emitting device and water sterilizing device |
| WO2021208264A1 (en) * | 2020-04-17 | 2021-10-21 | 宁波升谱光电股份有限公司 | Ultraviolet led device |
| CN114335296A (en) * | 2021-10-25 | 2022-04-12 | 华南理工大学 | Deep ultraviolet LED packaging device and preparation method thereof |
| CN115421333A (en) * | 2022-09-21 | 2022-12-02 | 豪威半导体（上海）有限责任公司 | LCOS (liquid Crystal on silicon) packaging structure and packaging method |
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| CN109103319A (en) * | 2018-08-21 | 2018-12-28 | 华中科技大学鄂州工业技术研究院 | A kind of deep ultraviolet LED encapsulation structure and its packaging method |
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| CN112786759A (en) * | 2019-11-08 | 2021-05-11 | 宁波安芯美半导体有限公司 | Light-emitting diode substrate, preparation method and light-emitting diode bulb |
| CN113161467A (en) * | 2020-01-22 | 2021-07-23 | 斯坦雷电气株式会社 | Light emitting device and water sterilizing device |
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