CN112038463A - Ultraviolet LED device and preparation method thereof - Google Patents
Ultraviolet LED device and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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Abstract
The invention provides an ultraviolet LED device and a preparation method thereof, wherein the ultraviolet LED device comprises the following components: the ultraviolet LED device comprises an LED support, an LED chip arranged on the LED support and a packaging layer covering the LED chip on the LED support, wherein: the LED support comprises a support body and a cavity arranged on the periphery of the support body, and the LED chip is coated on the support body by the packaging layer based on the cavity; the encapsulation layer includes a protective layer and a reflective layer. By implementing the embodiment of the invention, the nano particles are mixed in the colloid to form the packaging layer, so that the ultraviolet light can be prevented from being absorbed in the light emitting process, and meanwhile, the light emitting efficiency of the ultraviolet light is improved based on the scattering effect and the reflection effect of the nano particles.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to an ultraviolet LED device and a preparation method thereof.
Background
Ultraviolet light is widely applied to the fields of curing, photocatalyst, nail beautification, mosquito trapping and the like, and an ultraviolet LED device has the advantages of low energy consumption, long service life and the like, and is gradually replacing the traditional mercury lamp at present. However, as the wavelength of the ultraviolet LED is reduced, the luminous efficiency of the ultraviolet LED is lower and lower, and the reduced luminous efficiency shows that more input is converted into heat energy, which has an important influence on the practical application of the ultraviolet LED. At present, the most core method for improving the light efficiency of the ultraviolet LED is designed on an epitaxy or chip, but the technical difficulty of designing on the epitaxy or chip is high, and the problem is difficult to solve temporarily. The low light efficiency is that the heat inside the ultraviolet LED device is increased due to the internal absorption of ultraviolet light, and the problem that the heat dissipation is increased or a reflecting layer is arranged on the surface of an LED support to solve the problem on the basis of the existing application can only be solved, so that the cost of the ultraviolet LED device can be improved.
Disclosure of Invention
In order to overcome the defects of low heat dissipation performance, high cost and the like of the conventional ultraviolet LED device, the embodiment of the invention provides the ultraviolet LED device and the preparation method thereof.
Correspondingly, the invention provides an ultraviolet LED device, which comprises an LED bracket, an LED chip arranged on the LED bracket and a packaging layer covering the LED chip on the LED bracket, wherein: the LED support comprises a support body and a cavity arranged on the periphery of the support body, and the LED chip is coated on the support body by the packaging layer based on the cavity; the LED packaging structure comprises an LED support, a packaging layer, a reflecting layer and a packaging layer, wherein the packaging layer comprises a protective layer and the reflecting layer, the protective layer is formed by mixing packaging glue and nano particles, the reflecting layer is positioned on the LED support and around the LED chip, and the protective layer is positioned on the reflecting layer and covers the LED chip; the mass ratio of the nano particles in the reflecting layer is larger than that of the nano particles in the protective layer, and the forbidden bandwidth of the nano particles is larger than 5.0 eV.
The nano particles are boron nitride, or aluminum nitride, or zirconium oxide.
The nano particles in the protective layer account for 0-1% of the total mass ratio of the protective layer; the nano particles in the reflecting layer account for 90 to 99 percent of the total mass ratio of the reflecting layer.
The protective layer is characterized in that a transition layer formed by precipitating mixed glue mixed with nanoparticles is further arranged between the reflecting layer and the protective layer, and the concentration of the nanoparticles in the mixed glue is gradually reduced from the bottom of the reflecting layer to the surface of the transition layer.
The heights of the reflecting layer and the transition layer on the support body are not higher than the height of the LED chip fixed on the support body.
The particle size of the nanoparticles is between 100nm and 10 μm.
The ultraviolet LED device further comprises quartz glass, and the quartz glass seals the packaging layer based on the cavity.
Correspondingly, the invention also provides a preparation method of the ultraviolet LED device, which comprises the following steps:
the method comprises the following steps of curing and forming a first protective layer on the surface of an LED chip based on first packaging glue mixed with nano particles, wherein the first protective layer covers the LED chip, the nano particles account for 0-1% of the total mass of the first packaging glue, and the LED chip is arranged on a bracket body of an LED bracket with a cavity;
adding second packaging glue mixed with nanoparticles into the cavity, wherein the nanoparticles account for 1-20% of the total mass of the second packaging glue, and forming a reflecting layer on the surface of the bracket body based on a precipitation method;
filling a third packaging glue mixed with nano particles in the whole cavity after the reflective layer is deposited and formed, wherein the nano particles account for 0-1% of the third packaging glue by mass, and forming a second protective layer in the cavity based on the third packaging glue;
curing and molding the device filled with the second protective layer to form an ultraviolet LED device;
the forbidden band width of the nano-particles is more than 5.0 eV.
The height of the second packaging glue in the cavity is not higher than the height of the LED chip fixed behind the support body.
The precipitation method includes a centrifugal precipitation method or a natural precipitation method.
The particle size of the nanoparticles is between 100nm and 10 μm.
The nanoparticles are made of boron nitride, aluminum nitride, or zirconium oxide.
The method further comprises the following steps:
after the ultraviolet LED device is cured and molded, quartz glass is arranged on the ultraviolet LED device.
According to the ultraviolet LED device provided by the embodiment of the invention, the packaging layer is formed by adopting the nano particles with high forbidden band width and glue, when the ultraviolet LED device works, the nano particles do not absorb ultraviolet light and have a good reflection effect, and a good reflection layer is formed at the bottom of the ultraviolet LED device, so that the absorption of the surface of the bracket body to the ultraviolet light can be reduced. When the high-refractive-index nano particles are doped in the glue to form the packaging layer, the nano particles can improve the refractive index of the packaging layer, reduce the refractive index difference between the packaging layer and the chip, increase the escape cone angle of the surface of the chip and enable more ultraviolet light to escape; because of the refractive index difference between the nano particles and the packaging layer, ultraviolet light can be scattered on the surfaces of the nano particles, so that the light can change the transmission direction, more light can be emitted to the air, the light emitting efficiency is improved, the mixed nano particles have higher heat conducting performance, and the heat conductivity of the colloid can be improved by doping the mixed nano particles in the colloid.
According to the preparation method of the ultraviolet LED device provided by the embodiment of the invention, the ultraviolet LED device is formed by mixing the nano particles in the glue, the manufacturing process is simple, compared with the existing method of forming the reflecting layer on the substrate in spraying, arc plating and other modes, the process complexity is reduced, the whole reflecting layer forming process can be completed only by mixing and forming substances and curing the device, the method can be realized without the aid of complex process equipment and process environment requirements, the requirements on process control application conditions are not high, and the auxiliary equipment investment can be reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 shows a schematic structural diagram of a first embodiment of an ultraviolet LED device according to an embodiment of the present invention;
FIG. 2 shows a flow chart of a first embodiment of a method of making an ultraviolet LED device according to an embodiment of the present invention;
FIG. 3 shows a schematic view of an ultraviolet LED device without a shaped first protective layer according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an ultraviolet LED device formed with a first protective layer according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of an ultraviolet LED device after a second encapsulation glue is added according to an embodiment of the invention;
FIG. 6 shows a schematic structural diagram of an ultraviolet LED device with a reflecting layer for deposition according to an embodiment of the present invention;
fig. 7 shows a schematic structural diagram of the ultraviolet LED device after a third encapsulation glue is added in the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Fig. 1 shows a schematic structural diagram of a first embodiment of an ultraviolet LED device in an embodiment of the present invention, the ultraviolet LED device includes an LED support (102), an LED chip (104), and an encapsulation layer covering the LED chip on the LED support, wherein: the LED support comprises a support body (105) and a cavity (101) arranged on the periphery of the support body, wherein the cavity (101) and the support body (105) form an accommodating space for accommodating an LED chip (104) and a packaging layer, and the packaging layer can cover the LED chip (104) on the LED support body (105) based on the cavity (101).
Specifically, the packaging layer comprises a protective layer (106) and a reflective layer (103), the protective layer (106) is formed by mixing packaging glue and nano particles, the reflective layer (103) is positioned on the surface of the support body (105) and is positioned around the LED chip (104), and the protective layer (106) is positioned on the reflective layer (103) and covers the LED chip (104); the mass ratio of the nano particles in the reflecting layer (103) is larger than that of the nano particles in the protective layer (106), and the forbidden bandwidth of the nano particles is larger than 5.0 eV.
The nano particles are boron nitride, or aluminum nitride, or zirconium oxide, for example, the nano particles may be boron nitride, the boron nitride-based formed nano particles are mixed with the packaging glue for forming, the mixed glue acts on the cavity of the LED support, and then the ultraviolet LED device in the embodiment of the present invention is cured and formed. The nano particles with high forbidden band width can not absorb ultraviolet light, and the reflecting layer (103) positioned at the bottom can have a good reflecting function, so that the absorption of the bottom of the bracket body (105) to the ultraviolet light is reduced; the protective layer (106) can achieve a scattering effect by adopting nano particles, and the light extraction effect is improved. When the high-refractive-index nano particles are doped in the glue to form the packaging layer, the nano particles can improve the refractive index of the packaging layer, reduce the refractive index difference between the packaging layer and the chip, increase the escape cone angle of the surface of the chip and enable more ultraviolet light to escape; because of the refractive index difference between the nano particles and the packaging layer, ultraviolet light can be scattered on the surfaces of the nano particles, so that the light can change the transmission direction, more light can be emitted to the air, the light emitting efficiency is improved, the mixed nano particles have higher heat conducting performance, and the heat conductivity of the colloid can be improved by doping the mixed nano particles in the colloid. Adopt the nanoparticle for not adding under the nanoparticle shaping condition in the protective layer, can promote the light-emitting rate, its radiating effect also has the improvement, this is because protective layer among the prior art has the absorbing action to the ultraviolet ray, can make the light-emitting rate reduce, also makes inside heat production and gather to be difficult to conduct away.
In the specific implementation process, the nano particles in the protective layer (106) account for 0-1% of the total mass of the protective layer, when the mixed glue is prepared, the nano particles can be prepared to only account for 0.1% of the total mass of the mixed glue for forming, the nano particles can also be prepared to only account for 0.2% of the total mass of the mixed glue for forming, the nano particles can also be prepared to only account for 0.5% of the total mass of the mixed glue for forming, and the nano particles can also be prepared to only account for 1% of the total mass of the mixed glue for forming; the nano-particles in the reflecting layer (103) account for 90-99% of the total mass of the reflecting layer, wherein the reflecting layer (103) is formed based on centrifugal precipitation or natural precipitation after the packaging glue and the nano-particles are mixed.
In the specific implementation process, the ultraviolet LED device based on precipitation molding is provided with a transition layer (1063), the transition layer (1063) can be regarded as a part of a protective layer (106), the function and the effect of the transition layer are the same as those of the protective layer, the nano particles before centrifugal precipitation molding account for 1 to 20 percent of the total mass of mixed glue, when the mixed glue is proportioned, the nano particles can be configured to only account for 1 percent of the total mass of the mixed glue for molding, the nano particles can be configured to only account for 2 percent of the total mass of the mixed glue for molding, the nano particles can be configured to only account for 5 percent of the total mass of the mixed glue for molding, the nano particles can be configured to only account for 10 percent of the total mass of the mixed glue for molding, the nano particles can be configured to only account for 15 percent of the total mass of the mixed glue for molding, and the nano particles can be configured to only account for 20 percent. The concentration of nanoparticles in the reflecting layer (103) and the transition layer (1063) formed based on precipitation in the mixed glue is gradually reduced from the bottom of the reflecting layer (103) to the surface of the transition layer (1063), namely the concentration of the bottom of the reflecting layer (103) can be up to 99% of the total mass of the mixed glue, the concentration of the middle of the reflecting layer (103) can be up to 95% of the total mass of the mixed glue, the concentration of the surface of the reflecting layer (103) can be up to 90% of the total mass of the mixed glue, the concentration of the bottom of the transition layer (1063) can be up to 10% of the total mass of the mixed glue, the concentration of the middle of the transition layer (1063) can be up to 0.8% of the total mass of the mixed glue, the concentration of the surface of the transition layer (1063) can be up to 0.05% of the total mass of the mixed. The height of the reflecting layer (103) and the transition layer (1063) on the bracket body is not higher than that of the LED chip (104) fixed on the bracket body, namely the height of the mixed glue before deposition is preferably not higher than the surface of the LED chip (104), so that the phenomenon that light interference is caused by deposition molding of nano particles on the surface of the LED chip (104) is avoided.
In the specific implementation process, the particle size of the nanoparticles is controlled to be between 100nm and 10 microns, the nanoparticles in the reflecting layer (103) formed at the bottom need to be arranged densely, the reflecting effect on ultraviolet light is better, if the nanoparticles are too small, the particles are too light and easy to float in the mixed colloid and cannot settle to the bottom, so that the reflection is affected, and if the nanoparticles are too large, the particles are not compact enough or gaps exist between the particles, so that the reflection at the bottom is affected.
In the specific implementation process, the ultraviolet LED device further comprises quartz glass (107), the quartz glass (107) seals the packaging layer based on the cavity (101), and the quartz glass (107) can protect the packaging layer and the LED chip on the whole ultraviolet LED device, so that the functions of dust prevention and protection and the like are achieved.
In the specific implementation process, through the relation experiment of the light emission and the mass ratio of the nano particles with the same size in the protective layer (106), the comparison relation result shown in the table I is obtained:
watch 1
From the whole experimental data, the light-emitting rate can be improved between 0 and 1 percent of the mass ratio of the nano particles, and the mixed colloid with the mass ratio of the nano particles of about 0.4 percent can be selected for better light-emitting rate.
In the specific implementation process, the comparative relationship result shown in table two is obtained by the experiment on the relationship between the particle size of the related nano particles and the light emission:
watch two
From the whole experimental data, the particle size of the nano particles is basically improved within 100nm-10 mu m, the light emitting difference is small, the light emitting percentage of the nano particles floats around 115%, the light emitting percentage of the nano particles exceeding 10 mu m is in a descending trend, the larger the particles are, and for the reflecting layer, the larger the gap is, the less the reflection is. For filled hybrid gels, the larger the particles, the more pronounced the light-blocking effect.
Example two
Fig. 2 shows a flowchart of a first embodiment of a method for manufacturing an ultraviolet LED device in an embodiment of the present invention, which includes the following specific steps:
s201, curing and molding a first protective layer on the surface of an LED chip based on first packaging glue mixed with nanoparticles, wherein the first protective layer covers the LED chip, the nanoparticles account for 0-1% of the total mass of the first packaging glue, and the LED chip is arranged on a bracket body of an LED bracket with a cavity;
fig. 3 to 4 show structural state evolution diagrams of an ultraviolet LED device with a first protective layer formed by curing on an LED support with LED chips, in which an LED chip (104) is first disposed on a surface of a support body (105) of an LED support (102) with a cavity (101), and a high-viscosity adhesive is used on the surface of the LED chip (104) to form the first protective layer (1061). And the high-viscosity glue is doped with boron nitride (or aluminum nitride or zirconium oxide) nano particles, the total mass percentage of the nano particles is between 0 and 1 percent, and the arranged first protective layer (1061) is solidified.
S202, adding second packaging glue mixed with nanoparticles into a cavity, wherein the nanoparticles account for 1-20% of the total mass of the second packaging glue, and forming a reflecting layer on the surface of the bracket body based on a precipitation method;
fig. 5 and fig. 6 show structural state evolution diagrams of the cured and molded LED device after adding a second packaging glue to the deposition-molded ultraviolet LED device with a reflective structure; adding a second packaging glue mixed with boron nitride (or aluminum nitride or zirconium oxide) nanoparticles into a cavity (101) of the LED device with a first protective layer (1061), forming a second glue layer (1062) before centrifugation by the second packaging glue, wherein the nanoparticles in the second packaging glue accounts for 1-20% of the total mass, the height of the second glue layer (1062) is not higher than the sum of the heights of the LED chip (104) and the first protective layer (1061), then precipitating the second glue layer (1062) in the LED device, such as natural precipitation or centrifugal precipitation, so that the nanoparticles can be completely precipitated at the bottom of the bracket or can completely cover the bottom of the bracket to form boron nitride (or aluminum nitride or zirconium oxide) nanoparticles which are fully distributed at the whole bottom except the LED chip, namely a forming reflecting layer (103) and a transition layer (1063), the nano-particles in the reflecting layer (103) account for 90 to 99 percent of the total mass ratio of the reflecting layer.
Preferably, the height of the second glue layer (1062) in the cavity is not higher than the height of the LED chip (104) fixed on the bracket body, and this arrangement has the advantage of avoiding that the nanoparticles are deposited on the surface of the first protection layer (1061) during deposition, thereby affecting the light extraction efficiency.
S203, after the reflective layer is deposited and formed, filling the whole cavity with third packaging glue mixed with nano particles, wherein the nano particles account for 0-1% of the total mass of the third packaging glue, and forming a second protective layer in the cavity based on the third packaging glue;
fig. 7 shows a schematic structural diagram of the ultraviolet LED device after adding the third encapsulation glue according to the embodiment of the present invention, where the third encapsulation glue with a mass ratio of nanoparticles to glue of 0% to 1% may be added again into the cavity (101), and the whole cavity (101) is filled with the third encapsulation glue to form the second protection layer (1064).
S204, curing and forming the device filled with the second protective layer to form an ultraviolet LED device;
based on the structural state shown in fig. 7, after the whole device is cured and molded, the protection layer of the ultraviolet LED device includes a first protection layer (1061) cured and molded based on first encapsulation glue, a transition layer (1063) cured and molded based on second encapsulation glue, a second protection layer (1064) cured and molded based on third encapsulation glue, and the like, the first protection layer (1061) is completed before the second encapsulation glue is added, and the transition layer (1063) cured and molded based on the second encapsulation glue and the second protection layer (1064) cured and molded based on the third encapsulation glue can be cured and molded after the third encapsulation glue is added. In the process of curing and molding the transition layer (1063) and the second protection layer (1064), the transition layer (1063) molded by the second packaging glue may be cured and molded first, and the second protection layer (1064) may be cured and molded after the third packaging glue is added to mold the second protection layer (1064).
Further, in step S205, after the ultraviolet LED device is cured and molded, quartz glass is further disposed on the ultraviolet LED device.
After the step is completed, the ultraviolet LED device with the structure shown in fig. 1 can be manufactured.
The above nanoparticles have a forbidden band width of more than 5.0eV, a particle size of 100nm to 10 μm, and are boron nitride, aluminum nitride, or zirconium oxide.
It can be seen from the above that, in the preparation method of the ultraviolet LED device provided in the embodiment of the present invention, the preparation process of the ultraviolet LED device can be completed by controlling the glue perfusion at different time nodes and curing the processed mixed glue through three times of glue mixing ratios, the preparation process of the ultraviolet LED device is completed by mixing the nanoparticles on the glue to form the ultraviolet LED device, the manufacturing process is simple, compared with the existing methods of spraying, arc plating, and the like, for forming the reflective layer on the substrate, the process complexity is reduced, the whole reflective layer forming process can be completed only by mixing and forming substances and curing the device, the process can be completed without the aid of complicated process equipment and process environment requirements, the requirements on process control application conditions are not high, and the investment of auxiliary equipment can be reduced.
The ultraviolet LED device and the method for manufacturing the same provided by the embodiment of the present invention are described in detail above, and the principle and the embodiment of the present invention are explained in detail herein by applying specific examples, and the description of the above embodiments is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (13)
1. The ultraviolet LED device is characterized by comprising an LED support, an LED chip arranged on the LED support and an encapsulation layer covering the LED chip on the LED support, wherein: the LED support comprises a support body and a cavity arranged on the periphery of the support body, and the LED chip is coated on the support body by the packaging layer based on the cavity; the LED packaging structure comprises an LED support, a packaging layer, a reflecting layer and a packaging layer, wherein the packaging layer comprises a protective layer and the reflecting layer, the protective layer is formed by mixing packaging glue and nano particles, the reflecting layer is positioned on the LED support and around the LED chip, and the protective layer is positioned on the reflecting layer and covers the LED chip; the mass ratio of the nano particles in the reflecting layer is larger than that of the nano particles in the protective layer, and the forbidden bandwidth of the nano particles is larger than 5.0 eV.
2. The ultraviolet LED device of claim 1, wherein the nanoparticles are boron nitride, or aluminum nitride, or zirconium oxide.
3. The ultraviolet LED device of claim 1, wherein the nanoparticles in the protective layer comprise between 0% and 1% of the total mass of the protective layer; the nano particles in the reflecting layer account for 90 to 99 percent of the total mass ratio of the reflecting layer.
4. The uv LED device of claim 3, further comprising a transition layer deposited from a mixed glue mixed with nanoparticles, wherein the concentration of the nanoparticles in the mixed glue decreases from the bottom of the reflective layer to the surface of the transition layer.
5. The ultraviolet LED device of claim 4, wherein the height of the reflective layer and the transition layer above the mount body is no higher than the LED chip height after the LED chip is secured to the mount body.
6. The ultraviolet LED device of claim 1, wherein the nanoparticles have a particle size between 100nm and 10 μ ι η.
7. The ultraviolet LED device of any one of claims 1 to 6, further comprising a quartz glass enclosing the encapsulation layer based on the cavity.
8. A preparation method of an ultraviolet LED device is characterized by comprising the following steps:
the method comprises the following steps of curing and forming a first protective layer on the surface of an LED chip based on first packaging glue mixed with nano particles, wherein the first protective layer covers the LED chip, the nano particles account for 0-1% of the total mass of the first packaging glue, and the LED chip is arranged on a bracket body of an LED bracket with a cavity;
adding second packaging glue mixed with nanoparticles into the cavity, wherein the nanoparticles account for 1-20% of the total mass of the second packaging glue, and forming a reflecting layer on the surface of the bracket body based on a precipitation method;
filling a third packaging glue mixed with nano particles in the whole cavity after the reflective layer is deposited and formed, wherein the nano particles account for 0-1% of the third packaging glue by mass, and forming a second protective layer in the cavity based on the third packaging glue;
curing and molding the device filled with the second protective layer to form an ultraviolet LED device;
the forbidden band width of the nano-particles is more than 5.0 eV.
9. The method for manufacturing an ultraviolet LED device according to claim 8, wherein the height of the second packaging glue in the cavity is not higher than the height of the LED chip after the LED chip is fixed on the support body.
10. The method of making an ultraviolet LED device of claim 8, wherein the precipitation method comprises a centrifugal precipitation method or a natural precipitation method.
11. The method of making an ultraviolet LED device according to claim 8, wherein the nanoparticles have a particle size between 100nm and 10 μ ι η.
12. The method of claim 8, wherein the nanoparticles are boron nitride, aluminum nitride, or zirconium oxide.
13. The method of manufacturing an ultraviolet LED device according to any one of claims 8 to 12, further comprising:
after the ultraviolet LED device is cured and molded, quartz glass is arranged on the ultraviolet LED device.
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