CN211508182U - Power semiconductor laser device with constant temperature control function - Google Patents
Power semiconductor laser device with constant temperature control function Download PDFInfo
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- CN211508182U CN211508182U CN202020556607.9U CN202020556607U CN211508182U CN 211508182 U CN211508182 U CN 211508182U CN 202020556607 U CN202020556607 U CN 202020556607U CN 211508182 U CN211508182 U CN 211508182U
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Abstract
A power semiconductor laser device with a constant temperature control function, comprising: the thermoelectric cooler comprises a semiconductor substrate, a first silicon dioxide layer, an n-type buffer layer, an n + ohm contact layer, an n electrode, an n-type cap layer, a P-type cap layer, a P electrode, a P + ohm contact layer, an integrated TEC semiconductor thermoelectric cooler, a semiconductor laser active area, a second silicon dioxide layer, an NTC thin film resistor metal electrode and an integrated TEC planar positive electrode. The utility model discloses an integration technique is integrated together semiconductor laser chip, semiconductor thermoelectric cooler (TEC), negative temperature coefficient's thermistor (NTC) to reach the accurate control of temperature, with the accurate control of solving semiconductor laser photoelectric property parameter. The method is widely applied to the fields of environmental atmosphere detection, communication, aerospace, aviation, ships, precision instruments, geological exploration, petroleum exploration, field operation, industrial control and the like, and has wide market prospect.
Description
Technical Field
The utility model relates to a semiconductor laser device particularly, relates to power semiconductor laser device with constant temperature control function.
Background
In the conventional semiconductor laser device, a semiconductor laser chip (LD), a semiconductor thermoelectric cooler (TEC), a negative temperature coefficient thermistor (NTC), a ceramic substrate carrier, and the like are separated and sealed in a housing in a clean environment by conventional assembly techniques such as mounting, bonding, and the like, as shown in fig. 1. The prior art adopts the discrete assembly technology, and is bulky, the assembly procedure is complicated, the yield is low, the process quality uniformity is difficult to guarantee, on the other hand, adopts the discrete assembly technology, and the heat conduction path is correspondingly too long, causes the great extension of heat signal feedback speed to influence the precision range of temperature control, further influence the occasion that semiconductor laser used at high accuracy, high stability, perhaps increase application system's the design degree of difficulty, complexity and use cost.
Therefore, the utility model discloses intend to adopt integration technique, on the structure basis of original semiconductor laser chip (LD), organically integrate semiconductor laser chip (LD), semiconductor thermoelectric cooler (TEC), negative temperature coefficient's thermistor (NTC) in an organic whole, solve above-mentioned problem.
Through retrieval, patents related to a temperature-controlled semiconductor laser in a Chinese patent database have a publication (announcement) number of CN 110707525A for a semiconductor laser temperature control device, a temperature control system and a control method thereof, a publication (announcement) number of CN 110600989A for a semiconductor laser and a preparation method thereof, a publication (announcement) number of CN110890691A for a semiconductor laser and a preparation method thereof, a publication (announcement) number of CN 110086084A for a constant-current source type semiconductor laser driving circuit with automatic temperature control, and a preparation method of a DFB semiconductor laser with wide temperature operation, and a publication (announcement) number of CN 110752508A. However, until now, there is no related application adopting the technical solution described in the present application.
Disclosure of Invention
The utility model aims at providing a power semiconductor laser device with thermostatic control function organically integrates semiconductor laser chip (LD), semiconductor thermoelectric cooler (TEC), negative temperature coefficient's thermistor (NTC) in an organic whole, and the solution adopts the discrete packaging technique to cause bulky, the technology quality uniformity is poor, temperature control is insensitive outside to the problem in the aspect of semiconductor laser photoelectric property parameter can not accurate control.
The technical scheme is as follows: on the basis of the structure of the original semiconductor laser chip (LD), an integrated integration technology is adopted, the back of the original semiconductor laser chip (LD) is integrated with a semiconductor thermoelectric cooler (TEC), and meanwhile, a thermistor (NTC) with a negative temperature coefficient is integrated on one electrode layer of the original semiconductor laser chip (LD). The integrated structure is schematically shown in fig. 2 and 3, and the specific structure is described as follows:
a power semiconductor laser device with constant temperature control function, include: the integrated TEC structure comprises a semiconductor substrate 6, a first silicon dioxide layer 7, an n-type buffer layer 8, an n + ohm contact layer 9, an n electrode 10, an n-type cap layer 11, a P-type cap layer 12, a P electrode 13, a P + ohm contact layer 14, an integrated TEC200, a semiconductor laser active region 300, a second silicon dioxide layer 16, a second silicon dioxide layer 15, an NTC thin-film resistor 3 and an NTC thin-film resistor metal electrode 4.
The integrated TEC200 includes: an integrated TEC p-type semiconductor 201, an integrated TEC n-type semiconductor 202, an integrated TEC first layer refractory electrode 203, an integrated TEC planar negative electrode 204, an integrated TEC planar positive electrode 205, an integrated TEC second layer refractory electrode 207, an integrated TEC first layer insulating medium isolation layer 206, an integrated TEC second layer insulating medium isolation layer 208.
The semiconductor laser active region 300 includes: an n-type lower cladding layer 301, an n-type lower cladding layer 302, an active layer 303, a p-type lower cladding layer 304, and a p-type upper cladding layer 305.
The lower layer of the semiconductor substrate 6 is the first silicon dioxide layer 7, the upper layer of the semiconductor substrate 6 is the n-type buffer layer 8, the upper layer of the n-type buffer layer 8 is the n + ohm contact layer 9, the upper layer of the n + ohm contact layer 9 is the n-type cap layer 11, the n electrode 10 and the second silicon dioxide layer 16, the upper layer of the n-type cap layer 11 is the semiconductor laser active region 300, the upper layer of the semiconductor laser active region 300 is the p-type cap layer 12, the upper layer of the P-type cap layer 12 is the P + ohm contact layer 14, the upper layer of the P + ohm contact layer 14 is the P electrode 13, the upper layer of the P electrode 13 has a large area of the third silicon dioxide layer 15, the upper layer of the third silicon dioxide layer 15 is the NTC thin film resistor 3, the upper layers at two ends of the NTC film resistor 3 are the NTC film resistor metal electrodes 4.
The upper layer of the n-type lower cladding layer 301 is the n-type lower cladding layer 302, the upper layer of the n-type lower cladding layer 302 is the active layer 303, the upper layer of the active layer 303 is the p-type lower cladding layer 304, and the upper layer of the p-type lower cladding layer 304 is the p-type upper cladding layer 305.
The lower layer of the first silicon dioxide layer 7 is the integrated TEC first refractory electrode 203 and the integrated TEC first insulating medium isolation layer 206, the lower layer of the integrated TEC first refractory electrode 203 is the integrated TEC p-type semiconductor 201 and the integrated TEC n-type semiconductor 202, the integrated TEC p-type semiconductor 201 and the integrated TEC n-type semiconductor 202 are isolated by the integrated TEC first insulating medium isolation layer 206, the upper layer of the integrated TEC second refractory electrode 207 is the integrated TEC p-type semiconductor 201, the integrated TEC n-type semiconductor 202 and the integrated TEC first insulating medium isolation layer 206, and the lower layer of the integrated TEC second refractory electrode 207 is the integrated TEC planar negative electrode 204, the integrated planar positive electrode 205 and the integrated TEC second insulating medium isolation layer 208.
The utility model discloses owing to adopted the integration technique, semiconductor laser chip (LD), semiconductor thermoelectric cooler (TEC), realize gapless contact between negative temperature coefficient's thermistor (NTC), and belong to the interatomic contact, but furthest, conduct the heat of semiconductor laser chip (LD) for thermistor the fastest, after signal processing, convey signal transmission semiconductor thermoelectric cooler (TEC) rapidly, with the current direction of control semiconductor thermoelectric cooling unit, control intensification or cooling frequency, thereby reach the accurate control of temperature, with the accurate control of solving semiconductor laser photoelectricity performance parameter.
The utility model has the advantages that: the method is characterized in that a semiconductor laser chip (LD), a semiconductor thermoelectric refrigerator (TEC) and a negative temperature coefficient thermistor (NTC) are integrated, so that gapless contact between a film thermistor and the semiconductor laser chip (LD) is realized, the film thermistor and the semiconductor laser chip (LD) belong to interatomic contact, the heat of the semiconductor laser chip (LD) can be conducted to the thermistor to the greatest extent and the fastest extent, the semiconductor thermoelectric refrigerator (TEC) can be controlled quickly, and the purpose of high-sensitivity temperature control is achieved; when the external working environment temperature of the temperature control device changes, the change range of the working environment temperature of the internal chip can be controlled within +/-1.5 ℃ of the set temperature, so that the temperature drift range of the related performance parameter indexes of the semiconductor laser chip (LD) is reduced; the direct contact between atoms is realized, the heat conduction impedance is greatly reduced, and the heat dissipation speed is accelerated, so that the long-term reliability of the device can be improved; the packaging space of an externally-mounted semiconductor laser chip (LD), a semiconductor thermoelectric cooler (TEC) and a negative temperature coefficient thermistor (NTC) is saved, the packaging volume of the device is reduced in a large ratio, and the packaging is reduced from plug-in packaging to surface-mounted packaging, so that the packaging reliability is greatly improved; the shape and size of the semiconductor thermoelectric cooler (TEC) and the negative temperature coefficient thermistor (NTC) can be set along with the shape and size of the semiconductor laser chip (LD), thereby greatly improving the customized customization capability; (6) the p-type semiconductor and the n-type semiconductor of the integrated TEC thermoelectric refrigerator are completely filled and isolated seamlessly by an insulating medium with excellent heat dissipation, the heat dissipation speed is far higher than that of the separated TEC thermoelectric refrigerator, and the reliability of the product is further improved.
Adopt the utility model discloses the device wide application of production requires when external environment temperature changes in requirements such as environmental atmosphere detection, communication, space flight, aviation, boats and ships, precision instruments, geological prospecting, oil exploration, other field work, industrial control, equips the occasion that must have high accuracy, high stability and use, has wide market prospect.
Drawings
Fig. 1 is a schematic diagram of an assembly structure of a conventional semiconductor laser device.
In fig. 1: the semiconductor laser chip comprises a semiconductor laser chip 1, a semiconductor laser chip back electrode 2, an NTC film resistor 3, an NTC film resistor 4, an NTC film resistor metal electrode 5, a ceramic substrate 100, a discrete TEC thermoelectric cooler 101, a discrete TEC p-type semiconductor 102, a discrete TEC n-type semiconductor 103, a discrete TEC p-type semiconductor and n-type semiconductor interconnecting conductor 103, a discrete TEC negative electrode lead 104, a discrete TEC positive electrode lead 105, a discrete TEC bottom surface ceramic substrate 106, a discrete TEC bottom surface metal bonding layer 107, a discrete TEC top surface ceramic substrate 108 and a discrete TEC top surface metal bonding layer 109.
Fig. 2 is a schematic structural diagram of a power semiconductor laser device with a constant temperature control function according to the present invention.
In fig. 2: 3 is an NTC thin film resistor, 4 is an NTC thin film resistor metal electrode, 6 is a semiconductor substrate, 7 is a first silicon dioxide layer, 8 is an n-type buffer layer, 9 is an n + euro contact layer, 10 is an n electrode, 11 is an n-type cap layer, 12 is a P-type cap layer, 13 is a P electrode, 14 is a P + euro contact layer, 15 is a third silicon dioxide layer, 16 is a second silicon dioxide layer, 200 is an integrated TEC thermoelectric cooler, 201 is an integrated TEC P-type semiconductor, 202 is an integrated TEC n semiconductor, 203 is an integrated TEC first refractory electrode, 207 is an integrated TEC second refractory electrode, 204 is an integrated TEC planar negative electrode, 205 is an integrated planar positive electrode, 206 is an integrated TEC first insulating medium isolation layer, 208 is an integrated TEC second insulating medium isolation layer, and 300 is an active region of a semiconductor laser.
Fig. 3 is a schematic diagram of the structure of the active region of the semiconductor laser device 300 shown in fig. 2.
In fig. 3, reference numeral 300 denotes an active region, 301 denotes an n-type lower cladding layer, 302 denotes an n-type lower cladding layer, 303 denotes an active layer, 304 denotes a p-type lower cladding layer, and 305 denotes a p-type upper cladding layer.
Detailed Description
Example (b):
1. the integrated TEC p-type semiconductor 201 is made of a p-type bismuth telluride semiconductor material.
2. The p-type bismuth telluride semiconductor material is Bi2Te3-Sb2Te3。
3. The thickness of the integrated TEC p-type semiconductor 201 is 0.2mm-0.6 mm.
4. The integrated TEC n-type semiconductor 202 is made of an n-type bismuth telluride semiconductor material.
5. The n-type bismuth telluride semiconductor material is Bi2Te3-Bi2Se3。
6. The thickness of the integrated TEC n-type semiconductor 202 is 0.2mm to 0.6 mm.
7. The material of the integrated TEC first layer refractory electrode 203 and the integrated TEC second layer refractory electrode 207 is chromium, titanium, tungsten or gold.
8. The semiconductor substrate 6 is made of silicon, and the n-type buffer layer 8 is made of gallium nitride.
9. The material of the semiconductor substrate 6 is indium phosphide.
By adopting the power semiconductor laser device with the constant temperature control function integrated by the scheme, the temperature difference delta T between the cold end and the hot end can reach more than 70 ℃ at normal temperature, and the temperature control precision and stability are obviously superior to those of a separated TEC device in the working environment of-65-125 ℃.
The above description is only for the specific embodiments of the present invention, and is not intended to limit the scope of the present invention. It will be understood by those skilled in the art that any obvious modifications, equivalent substitutions, improvements and the like can be made within the inventive concept of the present invention.
Claims (10)
1. A power semiconductor laser device with a constant temperature control function, comprising: the semiconductor device comprises a semiconductor substrate (6), a first silicon dioxide layer (7), an n-type buffer layer (8), an n + ohm contact layer (9), an n electrode (10), an n-type cap layer (11), a P-type cap layer (12), a P electrode (13), a P + ohm contact layer (14), an integrated TEC (200), a semiconductor laser active region (300), a second silicon dioxide layer (16), a third silicon dioxide layer (15), an NTC thin-film resistor (3) and an NTC thin-film resistor metal electrode (4);
the integrated TEC (200) comprises: an integrated TEC p-type semiconductor (201), an integrated TEC n-type semiconductor (202), an integrated TEC first layer refractory electrode (203), an integrated TEC planar negative electrode (204), an integrated TEC planar positive electrode (205), an integrated TEC second layer refractory electrode (207), an integrated TEC first layer insulating medium isolation layer (206), an integrated TEC second layer insulating medium isolation layer (208);
the semiconductor laser active region (300) comprises: an n-type lower cladding layer (301), an n-type lower confinement layer (302), an active layer (303), a p-type lower confinement layer (304), and a p-type upper cladding layer (305);
the lower layer of the semiconductor substrate (6) is the first silicon dioxide layer (7), the upper layer of the semiconductor substrate (6) is the n-type buffer layer (8), the upper layer of the n-type buffer layer (8) is the n + ohm contact layer (9), the upper layer of the n + ohm contact layer (9) is the n-type cap layer (11), the n electrode (10) and the second silicon dioxide layer (16), the upper layer of the n-type cap layer (11) is the semiconductor laser active region (300), the upper layer of the semiconductor laser active region (300) is the P-type cap layer (12), the upper layer of the P-type cap layer (12) is the P + ohm contact layer (14), and the upper layer of the P + ohm contact layer (14) is the P electrode (13); the most area of the upper layer of the P electrode (13) is the third silicon dioxide layer (15), the upper layer of the third silicon dioxide layer (15) is the NTC thin-film resistor (3), and the upper layers at two ends of the NTC thin-film resistor (3) are the NTC thin-film resistor metal electrodes (4);
the upper layer of the n-type lower cladding layer (301) is the n-type lower limiting layer (302), the upper layer of the n-type lower limiting layer (302) is the active layer (303), the upper layer of the active layer (303) is the p-type lower limiting layer (304), and the upper layer of the p-type lower limiting layer (304) is the p-type upper cladding layer (305);
the lower layer of the first silicon dioxide layer (7) is the integrated TEC first layer refractory electrode (203) and the integrated TEC first layer insulating medium isolation layer (206), the lower layer of the integrated TEC first layer refractory electrode (203) is the integrated TEC p-type semiconductor (201) and the integrated TEC n-type semiconductor (202), the integrated TEC p-type semiconductor (201) and the integrated TEC n-type semiconductor (202) are isolated by the integrated TEC first layer insulating medium isolation layer (206), the upper layer of the integrated TEC second layer refractory electrode (207) is the integrated TEC p-type semiconductor (201), the integrated TEC n-type semiconductor (202) and the integrated TEC first layer insulating medium isolation layer (206), the lower layer of the integrated TEC second layer refractory electrode (207) is the integrated planar TEC (204), the integrated TEC planar positive electrode (205) and the integrated TEC negative electrode (206), The integrated TEC second layer insulating medium isolation layer (208).
2. A power semiconductor laser device with a constant temperature control function according to claim 1, characterized in that: the integrated TEC p-type semiconductor (201) is made of a p-type bismuth telluride semiconductor material.
3. A power semiconductor laser device with a constant temperature control function according to claim 2, characterized in that: the p-type bismuth telluride semiconductor material is Bi2Te3-Sb2Te3。
4. A power semiconductor laser device with a constant temperature control function as claimed in claim 1 or 2, characterized in that: the thickness of the integrated TEC p-type semiconductor (201) is 0.2mm-0.6 mm.
5. A power semiconductor laser device with a constant temperature control function according to claim 1, characterized in that: the integrated TEC n-type semiconductor (202) is made of n-type bismuth telluride semiconductor material.
6. A power semiconductor laser device with a constant temperature control function according to claim 5, characterized in that: the n-type bismuth telluride semiconductor material is Bi2Te3-Bi2Se3。
7. A power semiconductor laser device with a constant temperature control function according to claim 1 or 5, characterized in that: the thickness of the integrated TEC n-type semiconductor (202) is 0.2mm-0.6 mm.
8. A power semiconductor laser device with a constant temperature control function according to claim 1, characterized in that: the material of the integrated TEC first layer refractory electrode (203) and the integrated TEC second layer refractory electrode (207) is chromium, titanium, tungsten or gold.
9. A power semiconductor laser device with a constant temperature control function according to claim 1, characterized in that: the semiconductor substrate (6) is made of silicon, and the n-type buffer layer (8) is made of gallium nitride.
10. A power semiconductor laser device with a constant temperature control function according to claim 1, characterized in that: the semiconductor substrate (6) is made of indium phosphide.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023235339A1 (en) * | 2022-05-31 | 2023-12-07 | Seekops Inc. | Tunable laser diode assembly for heat dissipation and collimation |
| US11988598B2 (en) | 2019-12-31 | 2024-05-21 | Seekops Inc. | Optical cell cleaner |
| US11994464B2 (en) | 2019-04-05 | 2024-05-28 | Seekops Inc. | Analog signal processing for a lightweight and compact laser-based trace gas sensor |
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- 2020-04-15 CN CN202020556607.9U patent/CN211508182U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11994464B2 (en) | 2019-04-05 | 2024-05-28 | Seekops Inc. | Analog signal processing for a lightweight and compact laser-based trace gas sensor |
| US11988598B2 (en) | 2019-12-31 | 2024-05-21 | Seekops Inc. | Optical cell cleaner |
| WO2023235339A1 (en) * | 2022-05-31 | 2023-12-07 | Seekops Inc. | Tunable laser diode assembly for heat dissipation and collimation |
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