CN111370396B - Photoelectric module assembly with constant temperature control function and manufacturing method thereof - Google Patents
Photoelectric module assembly with constant temperature control function and manufacturing method thereof Download PDFInfo
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- CN111370396B CN111370396B CN202010295154.3A CN202010295154A CN111370396B CN 111370396 B CN111370396 B CN 111370396B CN 202010295154 A CN202010295154 A CN 202010295154A CN 111370396 B CN111370396 B CN 111370396B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Connection of interconnections
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
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Abstract
A photoelectric module assembly with a constant temperature control function and a manufacturing method thereof comprise: the thermoelectric cooler comprises a ceramic or glass substrate, a light emitting assembly, a light receiving assembly, an integrated circuit chip, a chip component, an NTC film resistor, a top metal electrode of an optoelectronic module assembly and an integrated TEC thermoelectric cooler. The ceramic or glass substrate is used as a carrier, and the light emitting assembly, the light receiving assembly, the integrated circuit chip, the chip component, the NTC thin-film resistor and the like are integrated on the front surface of the ceramic or glass substrate; the integrated TEC thermoelectric cooler is organically integrated on the back surface of the ceramic or glass substrate to achieve accurate temperature control, so that accurate control of photoelectric performance parameters of the photoelectric module assembly is achieved. The method is widely applied to the fields of environmental atmosphere detection, communication, aerospace, aviation, ships, precision instruments, geological exploration, petroleum exploration, other field operations, industrial control and the like, and has wide market prospect.
Description
Technical Field
The present invention relates to a photovoltaic module assembly, and more particularly, to a photovoltaic module assembly having a constant temperature control function and a method of manufacturing the same.
Background
In the conventional optoelectronic module assembly with a constant temperature control function, a separated light emitting assembly (LD assembly for short), a light receiving assembly (PD assembly for short), a related integrated circuit chip, related electronic components, a negative temperature coefficient thermistor (NTC thin film resistor for short), a separated semiconductor thermoelectric cooler (TEC thermoelectric cooler for short) and the like are sealed in a housing in a clean environment by adopting conventional assembly technologies such as mounting, bonding and the like, as shown in fig. 1. The prior art adopts the discrete assembly technology, and is bulky, the assembly procedure is complicated, the yield is low, the process quality uniformity is difficult to guarantee, on the other hand, adopts the discrete assembly technology, and the heat conduction path is correspondingly too long, causes the great extension of heat signal feedback speed to influence the precision range of temperature control, further influence the occasion that semiconductor laser used at high accuracy, high stability, perhaps increase application system's the design degree of difficulty, complexity and use cost.
Therefore, the invention adopts an integrated integration technology, and organically integrates a light emitting component (called LD component for short), a light receiving component (called PD component for short), a related integrated circuit chip, related electronic components, a negative temperature coefficient thermistor (called NTC film resistor for short) and a semiconductor thermoelectric cooler (called TEC thermoelectric cooler for short) on the basis of the original assembly of separate devices, thereby solving the problems.
Through retrieval, patents related to a temperature-controlled semiconductor laser in a Chinese patent database have a publication (announcement) number of CN 110707525A for a semiconductor laser temperature control device, a temperature control system and a control method thereof, a publication (announcement) number of CN 110600989A for a semiconductor laser and a preparation method thereof, a publication (announcement) number of CN110890691A for a semiconductor laser and a preparation method thereof, a publication (announcement) number of CN 110086084A for a constant-current source type semiconductor laser driving circuit with automatic temperature control, and a preparation method of a DFB semiconductor laser with wide temperature operation, and a publication (announcement) number of CN 110752508A. However, until now, there is no related application adopting the technical solution described in the present application.
Disclosure of Invention
The invention aims to provide a photoelectric module component with a constant temperature control function, which organically integrates a light emitting component (LD component for short), a light receiving component (PD component for short), a related integrated circuit chip, related electronic components, a negative temperature coefficient thermistor (NTC film resistor for short) and a semiconductor thermoelectric cooler (TEC thermoelectric cooler for short), and solves the problems of large volume, poor process quality consistency and insensitive temperature control caused by adopting a discrete assembly technology, so that the photoelectric and electrical performance parameters of a semiconductor laser cannot be accurately controlled.
The technical scheme is as follows: a ceramic or glass substrate 1 is taken as a carrier, and a light emitting component (called LD component for short), a light receiving component (called PD component for short), a related integrated circuit chip, a related electronic component, a negative temperature coefficient thermistor (called NTC film resistor for short) and the like are integrated on the front surface of the ceramic or glass substrate 1; a semiconductor thermoelectric cooler (TEC for short) is organically integrated on the back of a ceramic or glass substrate 1, and a pin-free mode is adopted for electrode leading out, so that surface-mounted miniaturized high-reliability assembly application is realized. The integrated structure is schematically shown in fig. 2, and the specific structure is described as follows:
the invention relates to a photoelectric module component with a constant temperature control function, which comprises: the thermoelectric cooler comprises a ceramic or glass substrate 1, a light emitting assembly 2, a light receiving assembly 3, an integrated circuit chip 4, a chip component 5, an NTC thin film resistor 6, a top metal electrode 7 of an optoelectronic module assembly and an integrated TEC thermoelectric cooler 200.
The integrated TEC thermoelectric cooler 200 comprises: the integrated TEC structure comprises an integrated TEC p-type semiconductor 201, an integrated TEC n-type semiconductor 202, an integrated TEC top metal electrode 203, an integrated TEC bottom metal electrode 204, an integrated TEC ball-type negative electrode 205, an integrated TEC ball-type positive electrode 206, an integrated TEC first insulating medium isolating layer 207, an integrated TEC second insulating medium isolating layer 208 and an integrated TEC silicon dioxide buffer layer 209.
The upper layer of the ceramic or glass substrate 1 is the NTC thin film resistor 6 and the top metal electrode 7 of the photoelectric module assembly, and the upper layer of the top metal electrode 7 of the photoelectric module assembly is assembled with the light emitting assembly 2, the light receiving assembly 3, the integrated circuit chip 4 and the chip component 5.
The lower layer of the ceramic or glass substrate 1 is the integrated TEC silicon dioxide buffer layer 209, the lower layer of the integrated TEC silicon dioxide buffer layer 209 is the integrated TEC top metal electrode 203 and the integrated TEC first insulating medium isolation layer 207, the lower layer of the integrated TEC top metal electrode 203 is the integrated TEC p-type semiconductor 201, the integrated TEC n-type semiconductor 202 and the integrated TEC first insulating medium isolation layer 207, the integrated TEC p-type semiconductor 201 and the integrated TEC n-type semiconductor 202 are isolated by the integrated TEC first insulating medium isolation layer 207, and the upper layer of the integrated TEC bottom metal electrode 204 is the integrated TEC p-type semiconductor 201, the integrated TEC n-type semiconductor 202 and the integrated TEC first insulating medium isolation layer 207.
The lower layers at two ends of the integrated TEC bottom layer metal electrode 204 are the integrated TEC ball-type negative electrode 205 and the integrated TEC ball-type positive electrode 206.
The lower middle layer of the integrated TEC bottom layer metal electrode 204, excluding the integrated TEC ball-type negative electrode 205 and the integrated TEC ball-type positive electrode 206 at the two ends of the photovoltaic module assembly, is the integrated TEC second layer insulating medium isolation layer 208.
The invention relates to a method for manufacturing a photoelectric module component with a constant temperature control function, which takes a ceramic or glass substrate 1 as a carrier, and integrates a light emitting component 2, a light receiving component 3, an integrated circuit chip 4, a chip component 5, an NTC thin film resistor 6 and the like into a whole on the front surface of the ceramic or glass substrate 1; the integrated TEC thermoelectric cooler 200 is organically integrated on the back surface of the ceramic or glass substrate 1, and the integrated TEC spherical negative electrode 205 and the integrated TEC spherical positive electrode 206 are used for electrode extraction, and a process flow diagram is shown in fig. 19.
The specific method comprises the following steps:
s1, preparing the ceramic or glass substrate 1. As shown in fig. 3.
And S2, sputtering the integrated TEC silicon dioxide buffer layer 209 and the integrated TEC top metal electrode 203. As shown in fig. 4.
And S3, photoetching the integrated TEC top metal electrode 203. As shown in fig. 5.
And S4, sputtering the integrated TEC p-type semiconductor 201. As shown in fig. 6.
And S5, etching the integrated TEC p-type semiconductor 201. As shown in fig. 7.
S6, sputtering the integrated TEC first insulating dielectric isolation layer 207, and performing CMP polishing (chemical mechanical polishing, CMP for short, the same below). As shown in fig. 8.
And S7, etching the first insulating medium isolation layer 207. As shown in fig. 9.
S8, sputtering the integrated TEC n-type semiconductor 202 and CMP polishing. As shown in fig. 10.
And S9, sputtering the integrated TEC bottom metal electrode 204. As shown in fig. 11.
And S10, etching the integrated TEC bottom metal electrode 204. As shown in fig. 12.
And S11, sputtering the second insulating medium isolating layer 208 of the integrated TEC. As shown in fig. 13.
And S12, etching the integrated TEC second layer insulating medium isolation layer 208. As shown in fig. 14.
S13, sputtering the NTC thin film resistor 6 and etching the NTC thin film resistor 6. As shown in fig. 15.
And S14, sputtering the top metal electrode 7 of the photovoltaic module assembly, and etching the top metal electrode 7 of the photovoltaic module assembly. As shown in fig. 16.
And S15, sputtering and photoetching the integrated TEC pin metal layer, and performing high-temperature reflux to form the integrated TEC ball-type negative electrode 205 and the integrated TEC ball-type positive electrode 206. As shown in fig. 17.
And S16, attaching the light emitting component 2, the light receiving component 3, the integrated circuit chip 4 and the chip component 5. As shown in fig. 18.
The invention adopts the integrated integration technology, the light emitting component (LD component for short), the light receiving component (PD component for short), the related integrated circuit chip, the related electronic component, the negative temperature coefficient thermistor (NTC film resistor for short) and the semiconductor thermoelectric cooler (TEC thermoelectric cooler for short) realize gapless contact, and belong to interatomic contact, the heat of the light emitting component (LD component for short) can be conducted to the NTC film resistor to the maximum extent and the fastest, after signal processing, the signal is rapidly transmitted to the semiconductor thermoelectric cooler (TEC) to control the current direction of the semiconductor thermoelectric cooling unit and control the temperature rising or lowering frequency, thereby achieving the accurate control of temperature and solving the accurate control of the photoelectric property parameters of the semiconductor laser.
The invention has the advantages that: the integrated integration method of the light emitting assembly (LD assembly for short), the light receiving assembly (PD assembly for short), the related integrated circuit chip, the related electronic component, the negative temperature coefficient thermistor (NTC film resistor for short) and the semiconductor thermoelectric cooler (TEC thermoelectric cooler for short) is adopted, so that gapless contact between the NTC film resistor and the light emitting assembly (LD assembly for short) is realized, the NTC film resistor belongs to interatomic contact, the heat of the light emitting assembly (LD assembly for short) can be conducted to the NTC film resistor to the greatest extent and the fastest extent, the semiconductor thermoelectric cooler (TEC) is controlled quickly, and the purpose of high-sensitivity temperature control is achieved; when the external working environment temperature of the temperature control device changes, the change range of the working environment temperature of the chip inside the temperature control device can be controlled within +/-1.5 ℃ of the set temperature, so that the temperature drift range of relevant performance parameter indexes of a light emitting component (called LD component for short) is reduced; the direct contact between atoms is realized, the heat conduction impedance is greatly reduced, and the heat dissipation speed is accelerated, so that the long-term reliability of the device can be improved; saving the assembly space of an externally-attached light emitting assembly (LD assembly for short), a light receiving assembly (PD assembly for short), a related integrated circuit chip, a related electronic component, a negative temperature coefficient thermistor (NTC film resistor for short) and a semiconductor thermoelectric cooler (TEC thermoelectric cooler for short), reducing the packaging volume of the device in a large ratio, and greatly improving the packaging reliability because the surface-mounted packaging is reduced from the plug-in packaging; the shape and size of the semiconductor thermoelectric cooler (TEC) and the negative temperature coefficient thermistor (NTC) can be set automatically according to the shape and size of the photoelectric module assembly, thereby greatly improving the customized customization capability; (6) the p-type semiconductor and the n-type semiconductor of the integrated TEC thermoelectric refrigerator are completely filled and isolated seamlessly by an insulating medium with excellent heat dissipation, the heat dissipation speed is far higher than that of the separated TEC thermoelectric refrigerator, and the reliability of the product is further improved.
The device produced by the invention is widely applied to occasions requiring high-precision and high-stability use of equipment when the external environment temperature changes, such as environmental atmosphere detection, communication, aerospace, aviation, ships, precision instruments, geological exploration, petroleum exploration, other field operations, industrial control and the like, and has wide market prospect.
Drawings
Fig. 1 is a schematic view of an assembly structure of a conventional photovoltaic module assembly.
In fig. 1: 1 is a ceramic or glass substrate, 2 is a light emitting assembly, 3 is a light receiving assembly, 4 is an integrated circuit chip, 5 is a chip component, 6 is an NTC thin film resistor, 7 is a top metal electrode of an optoelectronic module assembly, 100 is a discrete TEC thermoelectric cooler, 101 is a discrete TEC p-type semiconductor, 102 is a discrete TEC n-type semiconductor, 103 is a discrete TEC p-type semiconductor and n-type semiconductor top surface interconnection conductor, 104 is a discrete TEC p-type semiconductor and n-type semiconductor bottom surface interconnection conductor, 105 is a discrete TEC negative electrode lead, 106 is a discrete TEC positive electrode lead, 107 is a discrete TEC top surface ceramic substrate, 108 is a discrete TEC bottom surface ceramic substrate, 109 is a discrete TEC top surface metal bonding layer, and 110 is a discrete TEC bottom surface metal bonding layer.
Fig. 2 is a schematic structural diagram of an integrated optoelectronic module assembly with a constant temperature control function according to the present invention.
In fig. 2: the integrated TEC light-emitting module comprises a ceramic or glass substrate 1, a light-emitting module 2, a light-receiving module 3, an integrated circuit chip 4, a chip component 5, an NTC thin-film resistor 6, an optoelectronic module top metal electrode 7, an integrated TEC thermoelectric cooler 200, an integrated TEC p-type semiconductor 201, an integrated TEC n-type semiconductor 202, an integrated TEC top metal electrode 203, an integrated TEC bottom metal electrode 204, an integrated TEC ball-type negative electrode 205, an integrated TEC ball-type positive electrode 206, an integrated TEC first insulating medium isolating layer 207, an integrated TEC second insulating medium isolating layer 208 and an integrated TEC silicon dioxide buffer layer 209.
Fig. 3 is a schematic view of a ceramic or glass substrate 1.
Fig. 4 is a schematic view of sputtering of the integrated TEC silicon dioxide buffer layer 209 and the integrated TEC top metal electrode 203.
Fig. 5 is a schematic view of integrated TEC top metal electrode 203 lithography.
Fig. 6 is a schematic view of integrated TEC p-type semiconductor 201 sputtering.
Fig. 7 is a schematic diagram of integrated TEC p-type semiconductor 201 etching.
Fig. 8 is a schematic view of the integrated TEC first layer insulating medium isolation layer 207 sputtering and CMP polishing.
Fig. 9 is a schematic diagram of the etching of the first insulating dielectric isolation layer 207.
Fig. 10 is a schematic diagram of integrated TEC n-type semiconductor 202 sputtering and CMP polishing.
Fig. 11 is a schematic diagram of sputtering of the integrated TEC bottom metal electrode 204.
Fig. 12 is a schematic diagram of etching of the integrated TEC underlying metal electrode 204.
Fig. 13 is a schematic sputtering diagram of the integrated TEC second insulating dielectric isolation layer 208.
Fig. 14 is a schematic diagram of etching the integrated TEC second insulating dielectric isolation layer 208.
Fig. 15 is a schematic diagram of NTC thin film resistor 6 sputtering and etching.
Fig. 16 is a schematic diagram of sputtering and etching of the top metal electrode 7 of the photovoltaic module assembly.
Fig. 17 is a schematic diagram of integrated TEC pin metal layer sputtering, photolithography, and high temperature reflow to form the integrated TEC ball-type negative electrode 205 and the integrated TEC ball-type positive electrode 206.
Fig. 18 is a schematic view showing mounting of the light emitting module 2, the light receiving module 3, the integrated circuit chip 4, and the chip component 5.
FIG. 19 is a schematic process flow diagram.
Detailed Description
Example (b):
1. the integrated TEC p-type semiconductor (201) is made of a p-type bismuth telluride semiconductor material which is Bi2Te3-Sb2Te3And the thickness of the integrated TEC p-type semiconductor (201) is 0.2mm-0.6 mm.
The integrated TEC n-type semiconductor (202) is made of n-type bismuth telluride semiconductor material which is Bi2Te3-Bi2Se3The thickness of the integrated TEC n-type semiconductor (202) is0.2mm-0.6mm。
2. The photoelectric module component with the constant temperature control function is characterized in that the integrated TEC top metal electrode (203) and the integrated TEC bottom metal electrode (204) are made of a nickel-chromium-copper-nickel-chromium-gold composite conductor.
3. The photoelectric module component with the constant temperature control function is characterized in that the ceramic or glass substrate (1) is made of aluminum oxide, beryllium oxide or microcrystalline glass.
4. The photoelectric module assembly with the constant temperature control function is characterized in that the integrated TEC first layer insulating medium isolating layer (207) and the integrated TEC second layer insulating medium isolating layer (208) are made of silicon dioxide or aluminum oxide.
By adopting the integrated photoelectric module component with the constant temperature control function, the temperature difference delta T between the cold end and the hot end can reach more than 70 ℃ at normal temperature, and the temperature control precision and stability are obviously superior to the temperature control effect of a separated TEC device in the working environment of-65-125 ℃.
The above description is only for the specific embodiments of the present invention and is not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that any obvious modifications, equivalent substitutions, improvements, etc. can be made within the inventive concept of the present invention.
Claims (10)
1. An optoelectronic module assembly having thermostatic control functionality, comprising: the device comprises an aluminum oxide ceramic, beryllium oxide ceramic or microcrystalline glass substrate (1), a light emitting component (2), a light receiving component (3), an integrated circuit chip (4), a chip component (5), an NTC thin-film resistor (6), a top metal electrode (7) of a photoelectric module component and an integrated TEC thermoelectric cooler (200);
the integrated TEC thermoelectric cooler (200) comprises: the integrated TEC structure comprises an integrated TEC p-type semiconductor (201), an integrated TEC n-type semiconductor (202), an integrated TEC top metal electrode (203), an integrated TEC bottom metal electrode (204), an integrated TEC ball-type negative electrode (205), an integrated TEC ball-type positive electrode (206), an integrated TEC first insulating medium isolating layer (207), an integrated TEC second insulating medium isolating layer (208) and an integrated TEC silicon dioxide buffer layer (209);
the upper layer of the aluminum oxide ceramic, beryllium oxide ceramic or glass-ceramic substrate (1) is the NTC thin-film resistor (6) and the top metal electrode (7) of the photovoltaic module assembly, and the upper layer of the top metal electrode (7) of the photovoltaic module assembly is provided with the light emitting assembly (2), the light receiving assembly (3), the integrated circuit chip (4) and the chip component (5);
the integrated TEC silicon dioxide buffer layer (209) is arranged on the lower layer of the aluminum oxide ceramic, beryllium oxide ceramic or microcrystalline glass substrate (1), the integrated TEC top metal electrode (203) and the integrated TEC first insulating medium isolation layer (207) are arranged on the lower layer of the integrated TEC silicon dioxide buffer layer (209), the integrated TEC p-type semiconductor (201), the integrated TEC n-type semiconductor (202) and the integrated TEC first insulating medium isolation layer (207) are arranged on the lower layer of the integrated TEC top metal electrode (203), the integrated TEC p-type semiconductor (201) and the integrated TEC n-type semiconductor (202) are isolated by the integrated TEC first insulating medium isolation layer (207), and the integrated TEC p-type semiconductor (201), the integrated TEC n-type semiconductor (202) and the integrated TEC bottom metal electrode (204) are arranged on the upper layer of the integrated TEC p-type semiconductor (201), the integrated TEC n-type semiconductor (202), The integrated TEC first layer of insulating medium isolation layer (207);
the lower layers at two ends of the integrated TEC bottom layer metal electrode (204) are the integrated TEC ball-type negative electrode (205) and the integrated TEC ball-type positive electrode (206);
and the middle lower layer of the integrated TEC bottom metal electrode (204) except electrodes (205, 206) at two ends of the photovoltaic module assembly is an integrated TEC second insulating medium isolating layer (208).
2. The photovoltaic module assembly with thermostatic control of claim 1, wherein: the integrated TEC p-type semiconductor (201) is made of a p-type bismuth telluride semiconductor material.
3. The photovoltaic module assembly with thermostatic control of claim 2, wherein: the p-type bismuth telluride semiconductor material is Bi2Te3-Sb2Te3。
4. An optoelectronic module assembly with thermostatic control as claimed in claim 1 or 2 wherein: the thickness of the integrated TEC p-type semiconductor (201) is 0.2mm-0.6 mm.
5. The photovoltaic module assembly with thermostatic control of claim 1, wherein: the integrated TEC n-type semiconductor (202) is made of n-type bismuth telluride semiconductor material.
6. The photovoltaic module assembly with thermostatic control of claim 5, wherein: the n-type bismuth telluride semiconductor material is Bi2Te3-Bi2Se3。
7. An optoelectronic module assembly as claimed in claim 1 or 5, wherein: the thickness of the integrated TEC n-type semiconductor (202) is 0.2mm-0.6 mm.
8. The photovoltaic module assembly with thermostatic control of claim 1, wherein: the integrated TEC top metal electrode (203) and the integrated TEC bottom metal electrode (204) are made of a nickel-chromium-copper-nickel-chromium-gold composite conductor.
9. The photovoltaic module assembly with thermostatic control of claim 1, wherein: the first insulating medium isolation layer (207) of the integrated TEC and the second insulating medium isolation layer (208) of the integrated TEC are made of silicon dioxide or aluminum oxide.
10. The method of manufacturing an optoelectronic module assembly with thermostatic control as set forth in claim 1, wherein: the manufacturing method is characterized in that the aluminum oxide ceramic, beryllium oxide ceramic or glass-ceramic substrate (1) is used as a carrier, and the light emitting component (2), the light receiving component (3), the integrated circuit chip (4), the chip component (5) and the NTC thin-film resistor (6) are integrated into a whole on the front surface of the aluminum oxide ceramic, beryllium oxide ceramic or glass-ceramic substrate (1); the integrated TEC thermoelectric cooler (200) is organically integrated on the back of the aluminum oxide ceramic, beryllium oxide ceramic or microcrystalline glass substrate (1), and the integrated TEC spherical negative electrode (205) and the integrated TEC spherical positive electrode (206) are adopted for electrode extraction, and the specific method comprises the following steps:
s1, preparing the aluminum oxide ceramic, beryllium oxide ceramic or microcrystalline glass substrate (1);
s2, sputtering the integrated TEC silicon dioxide buffer layer (209) and the integrated TEC top metal electrode (203);
s3, photoetching the integrated TEC top layer metal electrode (203);
s4, sputtering the integrated TEC p-type semiconductor (201);
s5, etching the integrated TEC p-type semiconductor (201);
s6, sputtering the integrated TEC first layer of insulating medium isolation layer (207) and carrying out CMP polishing;
s7, etching the first insulating medium isolation layer (207);
s8, sputtering the integrated TEC n-type semiconductor (202) and performing CMP polishing;
s9, sputtering the integrated TEC bottom metal electrode (204);
s10, etching the integrated TEC bottom metal electrode (204);
s11, sputtering the second insulating medium isolation layer (208) of the integrated TEC;
s12, etching the integrated TEC second layer insulating medium isolation layer (208);
s13, sputtering the NTC film resistor (6), and etching the NTC film resistor (6);
s14, sputtering the top metal electrode (7) of the photovoltaic module assembly, and etching the top metal electrode (7) of the photovoltaic module assembly;
s15, sputtering and photoetching an integrated TEC pin metal layer, and performing high-temperature reflux to form the integrated TEC ball-type negative electrode (205) and the integrated TEC ball-type positive electrode (206);
and S16, the light emitting component (2), the light receiving component (3), the integrated circuit chip (4) and the chip component (5) are mounted and attached.
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| US8686277B2 (en) * | 2004-12-27 | 2014-04-01 | Intel Corporation | Microelectronic assembly including built-in thermoelectric cooler and method of fabricating same |
| CN102446804A (en) * | 2011-12-28 | 2012-05-09 | 贵州振华风光半导体有限公司 | Integration method of high-integration high-reliability working temperature controllable thick film hybrid integrated circuit |
| CN211700276U (en) * | 2020-04-15 | 2020-10-16 | 广东鸿芯科技有限公司 | Photoelectric module assembly with constant temperature control function |
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