CN102522412A - Integration method of high-integration high-reliable controllable working-temperature thin-film hybrid integrated circuit - Google Patents
Integration method of high-integration high-reliable controllable working-temperature thin-film hybrid integrated circuit Download PDFInfo
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- CN102522412A CN102522412A CN2011104457489A CN201110445748A CN102522412A CN 102522412 A CN102522412 A CN 102522412A CN 2011104457489 A CN2011104457489 A CN 2011104457489A CN 201110445748 A CN201110445748 A CN 201110445748A CN 102522412 A CN102522412 A CN 102522412A
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Abstract
A high-integration high-reliable controllable working-temperature thin-film hybrid integrated circuit and an integration method thereof are disclosed. The circuit is formed by: a device tube shell pedestal (1), a pin (9), an aluminum nitride ceramic substrate (2), a semiconductor chip (3), a thermosensitive element (4), a film stop band (5), a film conduction band/a bonding area (6), a N-type semiconductor (7), a P-type semiconductor (8), a miniature thermoelectric refrigerator (11) and an insulation medium (10). A right side of the ceramic substrate (2) is the integration of the miniature thermoelectric refrigerator (11) and a conventional hybrid integrated circuit. Two ends of the N-type semiconductor (7) and the P-type semiconductor (8) are led out connecting lines and the insulation medium (10) is filled in the middle. The ceramic substrate (2) is arranged above the device tube shell pedestal (1). The integration method is characterized by: performing high vacuum sputtering and etching so as to form a metal electrode, the N-type semiconductor and the P-type semiconductor. By using the integrated circuit, a normal working problem with an external temperature which is higher than 125 DEG C or lower than minus 55 DEG C can be solved. The circuit can be widely used in the following fields, such as aerospace, aviation, ships, precise instruments, geological exploration, oil exploration, communication and the like.
Description
Technical field
The present invention relates to integrated circuit, specifically, relate to the controlled thin-film hybrid integrated circuit of high integrated highly reliable working temperature.
Background technology
In original hybrid circuit integrated technology; Be film substrate directly to be adorned be attached on the shell pedestal; Dress pastes semiconductor chip, chip components and parts on film substrate then; Adopt bonding wire (spun gold or Si-Al wire) to carry out bonding again, accomplish entire circuit and connect, in specific atmosphere, Guan Ji and pipe cap are sealed to form at last.Because semiconductor components and devices is a temperature sensor, generally can produce following influence in the former technology:
Bigger drift can take place with the variation of working temperature in some performance parameter index of the components and parts during (1) integrated circuit constitutes, even the scope of application of overshoot, cause device can not be in the temperature range of regulation operate as normal, particularly high-accuracy device.In case of necessity, compelled replacing new unit or degradation use or adopt other outside heat radiation (or cooling) measures to carry out temperature control.
(2) along with the rising of temperature, the reliability of device can descend, for example, 10 ℃ of the every risings of temperature, the reliability of semiconductor device will descend one times; In the harsher use occasion of operating ambient temperature, the long-term reliability of device can decline to a great extent.
(3) power hybrid integrated circuit can produce great amount of heat under normal operating position, and the device inside working temperature is risen rapidly; Except that the reliability that influences device, as do not have the passage that expels the heat-evil reliably, device will burn rapidly, brings for the normal use of device and seriously influences.
(4) in general use occasion; According to the physical characteristic of semiconductor PN junction temperature, the device maximum operating temperature is defined as 125 ℃, exceeds this temperature; The work of device will be unstable; Exceed junction temperature (150 ℃) and will produce nonvolatil damage, when in requiring greater than the hot environment more than 125 ℃, working, this type device can't satisfy; On the other hand, the minimum operating temperature of device is defined as-55 ℃, is lower than this temperature, and the work of device will be unstable, even ineffective.
In original hybrid circuit integrated technology; In the occasion that needs carry out working temperature control, adopt insulating ceramic film respectively as cold junction and hot junction substrate, N type semiconductor, P type semiconductor particle are put in the centre; Adopt the mode of gold alloy solder and the metal electrode on the upper and lower substrate to weld N type semiconductor, P type semiconductor particle; Form the conductor temperature refrigerating sheet, with one of them end face and base welding, integrated needs carry out temperature controlled components and parts on another end face.
Obviously, not enough below such method exists: 1. volume is too huge, is difficult for microminiaturization, and the product integrated level is difficult to improve; 2. carry out the alloy welding between the metal electrode on N type semiconductor, P type semiconductor particle and the upper and lower substrate, quality conformance is wayward, and product reliability is difficult to improve; 3. solder belongs to solder usually, causes serviceability temperature not improve; 4. belong to air insulated between N type semiconductor particle and the P type semiconductor particle, receive the influence of environmental pollution and steam easily, reduce reliability of products.
In recent years; The technical scheme of application Chinese patent has No. 200910102792.2 " bonding system of high-reliability thick-film mixed integrated circuit and manufacturing approach thereof ", No. 200920125720.5 " bonding system of high-reliability thick-film mixed integrated circuit ", No. 201010165085.0 " integrated approaches of high-reliability power hybrid integrated circuit ", No. 201020182220.8 " high-reliability power hybrid integrated circuits " etc.; But improve the problem of device reliability, remain a difficult problem in present technique field.
Summary of the invention
The object of the invention just provides the controlled thin-film hybrid integrated circuit of a kind of high integrated highly reliable working temperature; When between-100 ℃～+ 200 ℃, changing to solve ambient temperature; The working temperature environment of device inside circuit can be controlled in the normal operating temperature range (55 ℃～+ 125 ℃); Can as required the internal work ambient temperature be controlled at a certain suitable working temperature point, property minimizing device parameters is protected the device internal circuit with the variation of ambient temperature; Improve the stability of device, guarantee the operate as normal of device.
Another purpose of the present invention provides the integrated approach of above-mentioned thin-film hybrid integrated circuit, makes it can access practical application.
The inventor is according to the refrigeration principle of semiconductor PN---paltie effect (Peltier effect); Adopt minisize thermoelectric refrigeration (TEC:Thermoelectric Cooler) and the integrated technology of conventional hybrid integrated circuit, the controlled thin-film hybrid integrated circuit of high integrated highly reliable working temperature that provides is by device package pedestal, pin, aluminium nitride ceramic substrate (Al
3N
4), semiconductor chip, temperature-sensitive element, film stopband, film conduction band/bonding region, N type semiconductor, P type semiconductor, minisize thermoelectric refrigerator (TEC) and dielectric form; Wherein, The ceramic substrate front is the integrated of minisize thermoelectric refrigerator and conventional hybrid integrated circuit, comprises film stopband, film conduction band/bonding region, semiconductor chip, N type semiconductor, P type semiconductor and miniature components and parts; The two ends of N type semiconductor, P type semiconductor lead to connecting line, between be filled with dielectric; The back side places on the device package pedestal through metal film, and pin is contained in the two ends of device package pedestal.
The integrated approach of the controlled thin-film hybrid integrated circuit of high integrated highly reliable working temperature that the inventor provides comprises:
(1) at aluminium nitride ceramic substrate (Al
3N
4) front splash-proofing sputtering metal film, then carry out etching;
(2) sputter N type semiconductor material on the metal film after the etching carries out chemical mechanical planarization;
(3) then etch N type semiconductor;
(4) dielectric is filled in sputter afterwards, and carries out chemical mechanical planarization;
(5) sputter is filled the P type semiconductor material and is carried out chemical mechanical planarization again;
(6) sputtered metal film afterwards then carries out etching;
(7) sputter is filled dielectric and is carried out chemical mechanical planarization once more;
(8) follow difference sputter resistance film and metallic film on insulating medium layer;
(9) respectively resistance film and metallic film are carried out etching, form film conduction band and film stopband;
(10) aluminium nitride ceramic substrate back spatter metal film is welded on the device package pedestal;
(11) integrated other chips or element in the front at last carry out bonding, test, sealing cap, promptly obtain the controlled thin-film hybrid integrated circuit of high integrated highly reliable working temperature.
Principle of the present invention is: when PN junction is instead worked partially (N type semiconductor is drawn the termination positive supply, P type semiconductor connects negative supply), mix integrated refrigeration, the device inside working temperature descends; When PN junction positively biased is worked (N type semiconductor is drawn the termination negative supply, P type semiconductor connects positive supply), mix integrated pyrogenicity, the device inside working temperature rises.Thermistor is near to the more sensitive semiconductor chip of temperature; Be used for detection means internal work ambient temperature; Follow the tracks of the variation of resistance voltage and control the external controllable switching circuit; With the sense of current of control semiconductor cooler, control heats up or the cooling frequency, thereby reaches temperature controlled purpose.
The controlled thin-film hybrid integrated circuit of the integrated highly reliable working temperature of height of the present invention has following characteristics: 1. the device inside working temperature is controlled; Can play the effect of " thermostatic chamber "; In certain ambient temperature scope; The influence that not changed by ambient temperature, device performance parameter index be not occurrence temperature drift basically, and working stability is reliable; 2. long-term reliability that can boost device; 3. can in the hot environment more than 125 ℃, work (generally can reach about 200 ℃); 4. can in the low temperature environment below-55 ℃, work (generally can reach about-100 ℃); 5. to temperature sensor, down, can play good temperature stabilization and regulating action in working order; 6. to power hybrid integrated circuit, can play the fast cooling effect, device is had good temperature protection function.
Integrated approach of the present invention has following characteristics: 1. adopt the method for high vacuum sputter, directly sputter forms metal electrode, N type semiconductor, P type semiconductor in high vacuum; 2. contacting between semiconductor and the metal electrode is the atom contact, replaced traditional low-temperature alloy welding procedure, improves the reliability that each semiconductor grain contacts with upper/lower electrode greatly, thus the reliability of raising entire circuit; 3. directly adopt the sputtered film moulding, replaced the big spacing welding of traditional discrete semiconductor particle, dwindle the spacing between N type semiconductor particle and the P type semiconductor particle greatly, thereby improve integrated level between N type semiconductor and the P type semiconductor greatly; 4. between N type semiconductor particle and P type semiconductor particle, adopt the method for high vacuum sputter to fill fine and close dielectric, like silicon dioxide (SiO
2), alundum (Al (Al
2O
3), aluminium nitride (Al
3N
4) etc., guarantee not receive between N type semiconductor particle and the P type semiconductor particle steam and other pollutant effects, thereby improve the reliability of entire circuit; 5. it is integrated on the dielectric film, to carry out multilayer, thereby can improve the integrated level of circuit greatly and dwindle the circuit volume, promotes the reliability of circuit.
Adopt the device of integrated approach production of the present invention to be widely used in fields such as space flight, aviation, boats and ships, precision instrument, geological prospecting, oil exploration, other field works, optical-fibre communications, Industry Control, have vast market prospect.
Description of drawings
Fig. 1 is that the controlled thin-film hybrid integrated circuit sketch map of the integrated highly reliable working temperature of height of the present invention Fig. 2 is the control circuit sketch map.1 is the device package pedestal among the figure, and 2 is ceramic substrate, and 3 is semiconductor chip, and 4 is temperature-sensitive element; 5 is the film stopband, and 6 is film conduction band/bonding region, and 7 is N type semiconductor, and 8 is P type semiconductor; 9 is pin, and 10 is dielectric, and 11 is minisize thermoelectric refrigerator (TEC).
Embodiment
Embodiment:
The shake controlled thin-film hybrid integrated circuit of high integrated highly reliable working temperature of magnificent honourable semiconductor company research and development of Guizhou, this hybrid integrated circuit structure is as shown in Figure 1, by device package pedestal 1, pin 9, aluminium nitride ceramic substrate (Al
3N
4) 2, semiconductor chip 3, temperature-sensitive element 4, film stopband 5, film conduction band/bonding region 6, N type semiconductor 7, P type semiconductor 8, minisize thermoelectric refrigerator (TEC) 11 form with dielectric 10; Wherein, Ceramic substrate 2 fronts are the integrated of minisize thermoelectric refrigerator 11 and conventional hybrid integrated circuit, comprise film stopband 5, film conduction band/bonding region 6, semiconductor chip 3, N type semiconductor 7, P type semiconductor 8 and miniature components and parts; The two ends of N type semiconductor 7, P type semiconductor 8 lead to connecting line, between be filled with dielectric 10; The back side places on the device package pedestal 1 through metal film, and pin 9 is contained in the two ends of device package pedestal 1.
Its integrated approach comprises:
(1) at aluminium nitride ceramic substrate (Al
3N
4) front splash-proofing sputtering metal film, then carry out etching;
(2) sputter N type semiconductor material on the metal film after the etching carries out chemical mechanical planarization;
(3) then etch N type semiconductor;
(4) dielectric is filled in sputter afterwards, and carries out chemical mechanical planarization;
(5) sputter is filled the P type semiconductor material and is carried out chemical mechanical planarization again;
(6) sputtered metal film afterwards then carries out etching;
(7) sputter is filled dielectric and is carried out chemical mechanical planarization once more;
(8) follow difference sputter resistance film and metallic film on insulating medium layer;
(9) respectively resistance film and metallic film are carried out etching, form film conduction band and film stopband;
(10) aluminium nitride ceramic substrate back spatter metal film is welded on the device package pedestal;
(11) integrated other chips or element in the front at last carry out bonding, test, sealing cap, promptly obtain the controlled thin-film hybrid integrated circuit of high integrated highly reliable working temperature.
This hybrid integrated circuit long-term work under the extraneous working temperature more than 125 ℃, can drop to the actual work temperature of device inside chip below 125 ℃ in specific operating temperature range, guarantees the operate as normal of device; When under the low temperature environment below-55 ℃, working, can the actual work temperature of device inside chip be elevated to-more than 55 ℃, guarantee the operate as normal of device.
Claims (2)
1. one kind high controlled thin-film hybrid integrated circuit of integrated highly reliable working temperature; It is characterized in that this circuit is made up of device package pedestal (1), pin (9), aluminium nitride ceramic substrate (2), semiconductor chip (3), temperature-sensitive element (4), film stopband (5), film conduction band/bonding region (6), N type semiconductor (7), P type semiconductor (8), minisize thermoelectric refrigerator (11) and dielectric (10); Ceramic substrate (2) front is the integrated of minisize thermoelectric refrigerator (11) and conventional hybrid integrated circuit, comprises film stopband (5), film conduction band/bonding region (6), semiconductor chip (3), N type semiconductor (7), P type semiconductor (8) and miniature components and parts; The two ends of N type semiconductor (7), P type semiconductor (8) lead to connecting line, between be filled with dielectric (10); Ceramic substrate (2) back side places on the device package pedestal (1) through metal film, and pin (9) is contained in the two ends of device package pedestal (1).
2. the integrated approach of hybrid integrated circuit according to claim 1, its characteristic comprises:
(1) at aluminium nitride ceramic substrate (Al
3N
4) front splash-proofing sputtering metal film, then carry out etching;
(2) sputter N type semiconductor material on the metal film after the etching carries out chemical mechanical planarization;
(3) then etch N type semiconductor;
(4) dielectric is filled in sputter afterwards, and carries out chemical mechanical planarization;
(5) sputter is filled the P type semiconductor material and is carried out chemical mechanical planarization again;
(6) sputtered metal film afterwards then carries out etching;
(7) sputter is filled dielectric and is carried out chemical mechanical planarization once more;
(8) follow difference sputter resistance film and metallic film on insulating medium layer;
(9) respectively resistance film and metallic film are carried out etching, form film conduction band and film stopband;
(10) aluminium nitride ceramic substrate back spatter metal film is welded on the device package pedestal;
(11) integrated other chips or element in the front at last carry out bonding, test, sealing cap, promptly obtain the controlled thin-film hybrid integrated circuit of high integrated highly reliable working temperature.
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Cited By (7)
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| CN102891113A (en) * | 2012-10-18 | 2013-01-23 | 贵州振华风光半导体有限公司 | Integrating method for high-sensitivity temperature-controlled thick film hybrid integrated circuit |
| CN102931124A (en) * | 2012-11-28 | 2013-02-13 | 贵州振华风光半导体有限公司 | Integration method for high-density thin film hybrid integrated circuit |
| CN102945821A (en) * | 2012-11-28 | 2013-02-27 | 贵州振华风光半导体有限公司 | Integrating method of high-density thick-film hybrid integrated circuit |
| CN103107123A (en) * | 2012-12-12 | 2013-05-15 | 贵州振华风光半导体有限公司 | Method of integration of three-dimensional integrated power thick film hybrid integrated circuit |
| CN103107109A (en) * | 2012-12-12 | 2013-05-15 | 贵州振华风光半导体有限公司 | Method of integration of three-dimensional integrated power thin film hybrid integrated circuit |
| CN111370564A (en) * | 2020-04-15 | 2020-07-03 | 广东鸿芯科技有限公司 | Photoelectric module assembly with precise constant temperature control function and manufacturing method thereof |
| CN117729831A (en) * | 2024-02-18 | 2024-03-19 | 四川科尔威光电科技有限公司 | Ceramic double-sided integrated circuit of semiconductor refrigerator and preparation method thereof |
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| CN103107109B (en) * | 2012-12-12 | 2016-06-29 | 贵州振华风光半导体有限公司 | The integrated approach of three-dimensionally integrated power thin film hydrid integrated circuit |
| CN111370564A (en) * | 2020-04-15 | 2020-07-03 | 广东鸿芯科技有限公司 | Photoelectric module assembly with precise constant temperature control function and manufacturing method thereof |
| CN111370564B (en) * | 2020-04-15 | 2022-10-28 | 广东鸿芯科技有限公司 | Photoelectric module assembly with precise constant temperature control function and manufacturing method thereof |
| CN117729831A (en) * | 2024-02-18 | 2024-03-19 | 四川科尔威光电科技有限公司 | Ceramic double-sided integrated circuit of semiconductor refrigerator and preparation method thereof |
| CN117729831B (en) * | 2024-02-18 | 2024-06-04 | 四川科尔威光电科技有限公司 | Ceramic double-sided integrated circuit of semiconductor refrigerator and preparation method thereof |
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Application publication date: 20120627 |