CN102891113A - Integrating method for high-sensitivity temperature-controlled thick film hybrid integrated circuit - Google Patents
Integrating method for high-sensitivity temperature-controlled thick film hybrid integrated circuit Download PDFInfo
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- CN102891113A CN102891113A CN2012103961942A CN201210396194A CN102891113A CN 102891113 A CN102891113 A CN 102891113A CN 2012103961942 A CN2012103961942 A CN 2012103961942A CN 201210396194 A CN201210396194 A CN 201210396194A CN 102891113 A CN102891113 A CN 102891113A
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- thermistor
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Abstract
The invention discloses an integrating method for a high-sensitivity temperature-controlled thick film hybrid integrated circuit. The method comprises the steps of: printing and forming a thick film resistor, a metal conduction band and a metallic bonding area by using a screen printing method; printing and forming a thick film thermistor by using the screen printing method again; forming a thick film insulating medium layer and a thick film metalization layer which is required by sticking of chips on a thermistor thick film by using the same method; and directly installing and sticking a thermosensitive sensing signal treating chip, a temperature control device main chip, other active or passive elements and the like on a thick film base pipe by using a commonly hybrid integrated circuit assembling process, then performing bonding by using bonding wires, and finally sealing a pipe base and a pipe cap under a special atmosphere, so as to obtain a high-sensitivity temperature-controlled thick film hybrid integrated circuit device. According to the method, the thick film thermistor and the temperature control device main chip are in gapless atom contact in the maximum contact area, heat of the main chip can be fast transferred to the thermistor to the maximum degree, so as to realize high-sensitivity temperature-control.
Description
Technical field
The present invention relates to integrated circuit, specifically, relate to highly sensitive temperature control thick film hybrid integrated circuit.
Background technology
In the controlled hybrid circuit integrated technology of original working temperature, adopt the two dimensional surface integrated technology integrated of the mixing of working temperature controllable integrated circuit, with the temperature-sensitive plate resistor, temperature-sensitive transducing signal process chip, the temperature control device master chip that separate, other are active or passive component etc. directly dress be attached on the thick film substrate, adopt again bonding wire (spun gold or Si-Al wire) to carry out bonding, finish whole electrical equipment and connect, in specific atmosphere, Guan Ji and pipe cap are sealed to form at last.Original technology is owing to adopting the two dimensional surface integrated technology; unavoidably can be gapped between the temperature control device master chip of thermistor equitemperature senser element and need protection; temperature sensing can only be passed through the less side thermal radiation of area; the mode of the circuitous conduction of substrate base is responded to heat; thereby; the heat conduction time is corresponding long; cause the greatly prolongation of thermal signal feedback speed; thereby affect temperature controlled accuracy rating; further strengthen the temperature drift scope of temperature control device correlated performance parameter index; restriction temperature control device is in high accuracy; the occasion that high stability is used perhaps increases the design difficulty of application system; complexity and use cost.
Through retrieval, the Chinese patent application part that relates to the temperature control hybrid integrated circuit only has " integrated circuit, temperature control heating circuit and constant temperature retaining device with function of temperature control " CN101295184 number, this integrated circuit comprises a temperature adjusting module and a heater, the temperature adjusting module can be set a control signal according to the user, and heater is subjected to the control signal of temperature adjusting module to control to produce the heat energy of a predetermined temperature.But this integrated circuit does not belong to highly sensitive temperature control hybrid integrated circuit.
Summary of the invention
The integrated approach that the purpose of this invention is to provide a kind of highly sensitive temperature control thick film hybrid integrated circuit is to solve following problem: 1. realize the gapless close contact in the large tracts of land direction between the temperature control device master chip of thermistor equitemperature senser element and need protection; 2. when temperature control device external working environment temperature changes, the excursion of its inside chip operating ambient temperature can be controlled in design temperature ± 5 ℃ in, thereby reduce the temperature drift scope of temperature control device correlated performance parameter index; 3. save outer integrated space of pasting thermal resistance equitemperature senser element, further improve the integrated level of temperature control integrated circuit; 4. the shape of thermistor equitemperature senser element and large I set up on their own with shape and the size of temperature control device master chip, remove the impact that is subjected to outer subsides thermal resistance equitemperature senser element shape and size from.
The highly sensitive temperature control thick film hybrid integrated circuit that the inventor provides integrated is to adopt thick-film thermistor to mix integrated mode with temperature control device master chip integrated three-dimensional to realize, concrete integrated approach may further comprise the steps:
The first step adopts first the method for silk screen printing, and selected resistance thick film ink and metal thick film ink by the mask graph of design, are printed onto aluminium nitride ceramic substrate (Al
3N
4) on, trim through high temperature sintering and resistance respectively, form required thick-film resistor, metal conduction band, metal bonding district;
Second step adopts the method for silk screen printing again, with the mask graph of selected thermistor thick film ink by design, is printed onto aluminium nitride ceramic substrate (Al
3N
4) on, trim through high temperature sintering and resistance, form the thick-film thermistor of required form and size;
In the 3rd step, using the same method forms insulating thick film dielectric layer and the required thick-film metalliz layer of chip attach at the thermistor thick film again;
The 4th step, adopt conventional hybrid integrated circuit packaging technology, with temperature-sensitive transducing signal process chip, temperature control device master chip, active or passive component etc. directly dress be attached on the thick film substrate;
The 5th step, adopt bonding wire to carry out bonding, finish whole electrical equipment and connect;
The 6th step sealed Guan Ji and pipe cap in specific atmosphere, namely obtained required highly sensitive temperature control thick film hybrid integrated circuit device.
In the first step of said method, described resistance thick film ink is formed by resistance functional material, glass binder, organic solvent, modifier allotment, and wherein the resistance functional material is that ruthenium is oxide; Described metal thick film ink is formed by allotments such as conductor function material, glass binder, organic solvent, modifier, and the conductor function material is palladium-Jin; The temperature of described high temperature sintering control is 600 ℃～1050 ℃; It is laser resistor trimming that described resistance trims.
In the second step of said method, described thermistor thick film ink is formed by thermal resistance sensitization functional material, glass binder, organic solvent, modifier allotment, and wherein the thermal resistance sensitization functional material is linear slow change type (LNTC, LPTC), the temperature sensitive semiconductor ceramic material of negative temperature coefficient (NTC); The temperature of described high temperature sintering control is 600 ℃～1050 ℃; It is laser resistor trimming that described resistance trims.
In the 3rd step of said method, described insulating thick film dielectric layer prints with palladium-Jin thick film ink with ceramic dielectric slurry printing, the required thick-film metalliz layer of described chip attach.
In the 4th step of said method, described active or passive component is semiconductor bare chip, the surface-mount type components and parts after encapsulation.
In the 5th step of said method, described bonding wire is spun gold or Si-Al wire.
In the 6th step of said method, described specific atmosphere is high vacuum or high pure nitrogen or argon gas.
Integrated approach principle of the present invention is: owing to having realized that thick-film thermistor contacts in the gapless of Maximum Contact face with temperature control device master chip, can be at utmost, full out the heat with master chip conducts to thermistor, after signal is processed, pass the signal to rapidly semiconductor thermoelectric frigorific unit (TEC unit), the sense of current with control semiconductor thermoelectric frigorific unit (TEC unit), control heats up or the cooling frequency, thereby reaches temperature controlled purpose.
The advantage of the inventive method is: realized that 1. thick-film thermistor contacts in the gapless of Maximum Contact face with temperature control device master chip, can be at utmost, full out the heat with master chip conducts to thermistor, can be at utmost, full out the heat with master chip conducts to thermistor, with quick control semiconductor thermoelectric frigorific unit (TEC unit), reach highly sensitive temperature controlled purpose; 2. when temperature control device external working environment temperature changes, the excursion of its inside chip operating ambient temperature can be controlled in design temperature ± 5 ℃ in, thereby reduce the temperature drift scope of temperature control device correlated performance parameter index; 3. adopt the method for thick film silk screen printing and high temperature sintering to replace original surface mount reflow welding method, realize the close contact of thick-film thermistor and master chip, reduce heat transfer resistance, thereby, the long-term reliability of energy boost device; 4. save outer integrated space of pasting thermal resistance equitemperature senser element, further improve the integrated level of temperature control integrated circuit; 5. the shape of thermistor equitemperature senser element and large I set up on their own with shape and the size of temperature control device master chip, remove the impact that is subjected to outer subsides thermal resistance equitemperature senser element shape and size from.
Adopt the device of integrated approach production of the present invention to be widely used in the requirements such as space flight, aviation, boats and ships, precision instrument, geological prospecting, oil exploration, other field works, communication, Industry Control when extraneous variation of ambient temperature, equipment must have the occasion of high accuracy, high stability use, has wide market prospects.
Description of drawings
Fig. 1 is the front integrated approach schematic diagram of invention; Fig. 2 is the integrated technology schematic diagram of the inventive method, and Fig. 3 is the control circuit schematic diagram.
1 is the device package pedestal among the figure, and 2 is aluminium nitride (Al
3N
4) the ceramic substrate substrate back, 3 is semiconductor thermoelectric frigorific unit (TEC unit), 4 is aluminium nitride (Al
3N
4) the ceramic substrate substrate surface, 5 is pin, and 6 is thick film conduction band/bonding region, and 7 is thick-film resistor, 8 is semiconductor chip, and 9 is the surface-mount type thermistor, and 10 is the transducing signal process chip, 11 are the thermoelectric cooling pin, and 12 is the insulating thick film deielectric-coating, and 13 is thick-film thermistor.
Embodiment
Embodiment:
The shake FHTC40 temperature control accurate integrated voltage reference source of magnificent honourable semiconductor company research and development, Guizhou is mainly used in accurate measurement, accurate control field, and for system provides voltage reference accurate, Low Drift Temperature, the exemplary operation ambient temperature is at-80 ℃～180 ℃.
The core of this device is that a high-accuracy voltage reference chip is device master chip, a self-control thick-film thermistor for the temperature signal collection, a small-power precision operational-amplifier chip that is used for the temperature signal processing and amplifies.The technology of the present invention---thick-film thermistor is made with temperature control device master chip integrated three-dimensional mixing integrated technology in employing.Concrete technology is as follows:
⑴ choosing of ceramic substrate: for ease of the quick transmission of heat, and with semiconductor chip in the matching aspect the thermal expansion, adopt aluminium nitride ceramic substrate (Al
3N
4) make substrate;
⑵ the method that adopt silk screen printing, high temperature sintering, resistance to trim is at aluminium nitride ceramic substrate (Al
3N
4) to form required ruthenium be thick-film resistor, palladium-Jin conduction band and bonding region to substrate surface;
⑶ at aluminium nitride ceramic substrate (Al
3N
4) another side of substrate forms palladium-Jin conduction band and weld zone with above-mentioned method, is used for the integrated of semiconductor thermoelectric frigorific unit (TEC unit);
⑷ the method that adopt silk screen printing, high temperature sintering, resistance to trim, silk-screen, the linear thick-film electronic slurry of sintering trim resistance, form the thick-film thermistor of required form and size;
⑸ adopt the method for silk screen printing, high temperature sintering, forms the required palladium of 7240D series insulating medium layer shown in Figure 2 and chip attach-Jin metal layer at the thermistor thick film;
⑹ semiconductor thermoelectric frigorific unit (TEC unit) integrated: at another aluminium nitride ceramic substrate (Al
3N
4) the upper method that adopts silk screen printing, high temperature sintering, produce one deck conductivity, thermal conductivity, palladium that solderability is good-Jin conduction band and weld zone.
⑺ adopt the ternary mixed crystal material take bismuth telluride as matrix, and wherein the P type semiconductor material is: Bi
2Te
3-Sb
2Te
3, the N type semiconductor material is: Bi
2Te
3-Bi
2Se
3, semiconductor die garden thickness is about 0.5mm, the positive and negative in brilliant garden is carried out gold metallization (thickness is about 1.5 μ m), and carry out sufficient alloy.On scribing machine, size is in accordance with regulations carried out scribing, isolates required N-type and P type semiconductor crystal grain;
⑻ place with fixing crystal grain location: in the special stainless steel anchor clamps, with top layer aluminium nitride ceramic substrate (Al
3N
4), N-type and P type semiconductor crystal grain, bottom aluminium nitride ceramic substrate (Al
3N
4), alloy sheet position location in accordance with regulations places, and is and fixing;
⑼ alloy welding: in the vacuum alloying furnace, finish the alloy welding of N-type and P type semiconductor crystal grain;
⑽ the integrated substrate after weld alloy adopts the mode of gold alloy solder to be assembled on the base;
⑾ routinely the integrated circuit packaging technology, carries out the assembling of semiconductor chip, other SMD components;
⑿ bonding: adopt Si-Al wire to carry out bonding, whole electrical connection;
⒀ baking: at the main high-temperature baking that carries out in the stove under the protection of High Purity Nitrogen, about 150 ℃ more than 8 hours, steam is thoroughly dried;
⒁ sealing cap: in ar gas environment, carry out sealing cap, finish the integrated and production work of whole device;
⒂ test, screening, printing and packing: press Product Process file and checking file, finish test, screening, printing and the packing work of device.
The device that adopts this integrated technology to make, the temperature difference T in cold junction and hot junction can reach more than 65 ℃ at normal temperatures, in 125 ℃～200 ℃ hot environment, can reach more than 75 ℃, the exemplary operation ambient temperature has realized purpose of design at-80 ℃～180 ℃, satisfies user's requirement fully.
Claims (7)
1. the integrated approach of a highly sensitive temperature control thick film hybrid integrated circuit, it is characterized in that the method adopts thick-film thermistor to mix integrated mode with temperature control device master chip integrated three-dimensional and realizes, thick-film thermistor be integrated in temperature control device master chip under, shape and large I set up on their own with shape and the size of temperature control device master chip, and concrete grammar may further comprise the steps:
The first step adopts first the method for silk screen printing, selected resistance thick film ink and metal thick film ink are pressed the mask graph of design, be printed onto on the aluminium nitride ceramic substrate, trim through high temperature sintering and resistance respectively, form required thick-film resistor, metal conduction band, metal bonding district;
Second step adopts the method for silk screen printing again, with the mask graph of selected thermistor thick film ink by design, is printed onto on the aluminium nitride ceramic substrate, trims through high temperature sintering and resistance, forms the thick-film thermistor of required form and size;
In the 3rd step, using the same method forms insulating thick film dielectric layer and the required thick-film metalliz layer of chip attach at the thermistor thick film again;
The 4th step, adopt conventional hybrid integrated circuit packaging technology, with temperature-sensitive transducing signal process chip, temperature control device master chip, active or passive component directly dress be attached on the thick film substrate;
The 5th step, adopt bonding wire to carry out bonding, finish whole electrical equipment and connect;
The 6th step sealed Guan Ji and pipe cap in specific atmosphere, namely obtained required highly sensitive temperature control thick film hybrid integrated circuit device.
2. integrated approach as claimed in claim 1 is characterized in that in the first step, and described resistance thick film ink is formed by resistance functional material, glass binder, organic solvent, modifier allotment; Described metal thick film ink be by
LeadBody functional material, glass binder, organic solvent, modifier allotment form; The temperature of described high temperature sintering control is 600 ℃～1050 ℃; It is laser resistor trimming that described resistance trims.
3. integrated approach as claimed in claim 1 is characterized in that in the second step, and described thermistor thick film ink is formed by thermal resistance sensitization functional material, glass binder, organic solvent, modifier allotment; The temperature of described high temperature sintering control is 600 ℃～1050 ℃; It is laser resistor trimming that described resistance trims.
4. integrated approach as claimed in claim 1 is characterized in that in the 3rd step, and described insulating thick film dielectric layer prints with palladium-Jin thick film ink with ceramic dielectric slurry printing, the required thick-film metalliz layer of described chip attach.
5. integrated approach as claimed in claim 1 is characterized in that in the 4th step, and described active or passive component is semiconductor bare chip, the surface-mount type components and parts after encapsulation.
6. integrated approach as claimed in claim 1 is characterized in that described bonding wire is spun gold or Si-Al wire in the 5th step.
7. integrated approach as claimed in claim 1 is characterized in that described specific atmosphere is high vacuum or high pure nitrogen or argon gas in the 6th step.
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|---|---|---|---|
| CN201210396194.2A CN102891113B (en) | 2012-10-18 | 2012-10-18 | Integrating method for high-sensitivity temperature-controlled thick film hybrid integrated circuit |
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| CN201210396194.2A CN102891113B (en) | 2012-10-18 | 2012-10-18 | Integrating method for high-sensitivity temperature-controlled thick film hybrid integrated circuit |
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| CN102891113B CN102891113B (en) | 2015-03-04 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405803A (en) * | 2015-12-04 | 2016-03-16 | 贵州振华风光半导体有限公司 | Integration method of anti-jamming thick-film hybrid integrated circuit |
| CN114094539A (en) * | 2021-10-25 | 2022-02-25 | 广东汇芯半导体有限公司 | Semiconductor circuit having a plurality of transistors |
| CN116388706A (en) * | 2022-12-13 | 2023-07-04 | 无锡前诺德半导体有限公司 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050206368A1 (en) * | 2004-02-27 | 2005-09-22 | Wells-Cti, Llc, An Oregon Limited Liability Company | Burn-in testing apparatus and method |
| US20080224188A1 (en) * | 2007-03-14 | 2008-09-18 | Chang-Hun Han | Image sensor and method for manufacturing the same |
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
| CN101692428A (en) * | 2009-09-09 | 2010-04-07 | 贵州振华风光半导体有限公司 | Integrating method of hybrid integrated circuit with controllable working temperature |
| CN101826377A (en) * | 2010-03-31 | 2010-09-08 | 桂林电子科技大学 | Thick film thermistor slurry, preparation method thereof and thick film thermistor |
| CN101866861A (en) * | 2010-05-07 | 2010-10-20 | 贵州振华风光半导体有限公司 | Integration method of high-reliability power hybrid integrated circuit |
| CN102446804A (en) * | 2011-12-28 | 2012-05-09 | 贵州振华风光半导体有限公司 | Integration method of high-integration high-reliability working temperature controllable thick film hybrid integrated circuit |
| CN102522412A (en) * | 2011-12-28 | 2012-06-27 | 贵州振华风光半导体有限公司 | Integration method of high-integration high-reliable controllable working-temperature thin-film hybrid integrated circuit |
-
2012
- 2012-10-18 CN CN201210396194.2A patent/CN102891113B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050206368A1 (en) * | 2004-02-27 | 2005-09-22 | Wells-Cti, Llc, An Oregon Limited Liability Company | Burn-in testing apparatus and method |
| US20080224188A1 (en) * | 2007-03-14 | 2008-09-18 | Chang-Hun Han | Image sensor and method for manufacturing the same |
| CN101692428A (en) * | 2009-09-09 | 2010-04-07 | 贵州振华风光半导体有限公司 | Integrating method of hybrid integrated circuit with controllable working temperature |
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
| CN101826377A (en) * | 2010-03-31 | 2010-09-08 | 桂林电子科技大学 | Thick film thermistor slurry, preparation method thereof and thick film thermistor |
| CN101866861A (en) * | 2010-05-07 | 2010-10-20 | 贵州振华风光半导体有限公司 | Integration method of high-reliability power hybrid integrated circuit |
| CN102446804A (en) * | 2011-12-28 | 2012-05-09 | 贵州振华风光半导体有限公司 | Integration method of high-integration high-reliability working temperature controllable thick film hybrid integrated circuit |
| CN102522412A (en) * | 2011-12-28 | 2012-06-27 | 贵州振华风光半导体有限公司 | Integration method of high-integration high-reliable controllable working-temperature thin-film hybrid integrated circuit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405803A (en) * | 2015-12-04 | 2016-03-16 | 贵州振华风光半导体有限公司 | Integration method of anti-jamming thick-film hybrid integrated circuit |
| CN114094539A (en) * | 2021-10-25 | 2022-02-25 | 广东汇芯半导体有限公司 | Semiconductor circuit having a plurality of transistors |
| CN114094539B (en) * | 2021-10-25 | 2023-07-25 | 广东汇芯半导体有限公司 | Semiconductor circuit with a high-voltage power supply |
| CN116388706A (en) * | 2022-12-13 | 2023-07-04 | 无锡前诺德半导体有限公司 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
| CN116388706B (en) * | 2022-12-13 | 2023-10-20 | 无锡前诺德半导体有限公司 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
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