CN211700276U - Photoelectric module assembly with constant temperature control function - Google Patents

Abstract

An optoelectronic module assembly having thermostatic control functionality, comprising: the thermoelectric cooler comprises a ceramic or glass substrate, a light emitting assembly, a light receiving assembly, an integrated circuit chip, a chip component, an NTC film resistor, a top metal electrode of an optoelectronic module assembly and an integrated TEC thermoelectric cooler. The utility model discloses an integration technique organically integrates together light emission subassembly (being called LD subassembly for short), light receiving subassembly (being called PD subassembly for short), relevant integrated circuit chip, relevant electronic components, negative temperature coefficient's thermistor (being called NTC film resistor for short), semiconductor thermoelectric cooler (being called TEC thermoelectric cooler for short) to reach the accurate control of temperature, in order to solve the accurate control of photovoltaic module subassembly photoelectric property parameter. The method is widely applied to the fields of environmental atmosphere detection, communication, aerospace, aviation, ships, precision instruments, geological exploration, petroleum exploration, other field operations, industrial control and the like, and has wide market prospect.

Description

A photoelectric module assembly with thermostatic control function

technical field

The utility model relates to a photoelectric module assembly, in particular to a photoelectric module assembly with a constant temperature control function.

Background technique

The original photoelectric module components with constant temperature control function are the separated light emitting components (LD components for short), light receiving components (PD components for short), related integrated circuit chips, related electronic components, and negative temperature coefficient thermistors ( Referred to as NTC thin film resistor), separate semiconductor thermoelectric cooler (abbreviated as TEC thermoelectric cooler), etc. adopt traditional assembly techniques such as mounting and bonding, and are sealed in a case in a clean environment, as shown in Figure 1. Due to the discrete assembly technology used in the original technology, the volume is large, the assembly procedure is complex, the yield is low, and the consistency of process quality is difficult to guarantee. The thermal signal feedback speed is greatly prolonged, thereby affecting the accuracy range of temperature control, further affecting the use of semiconductor lasers in high-precision and high-stability situations, or increasing the design difficulty, complexity and cost of application systems.

To this end, the present invention intends to adopt an integrated integration technology. On the basis of the original separation device assembly, a light emitting assembly (abbreviated as LD assembly), a light receiving assembly (abbreviated as PD assembly), related integrated circuit chips, and related electronic components are integrated. , Negative temperature coefficient thermistor (referred to as NTC thin film resistor), semiconductor thermoelectric cooler (referred to as TEC thermoelectric cooler) organically integrated into one, to solve the above problems.

After searching, the patents related to temperature-controlled semiconductor lasers in the Chinese patent database include "Semiconductor Laser Temperature Control Device, Temperature Control System and Control Method" Publication (Announcement) No. CN 110707525 A, "A Temperature Control Method for Semiconductor Lasers". , structure and solid-state laser "public (announcement) number is CN 110600989A, "a semiconductor laser and its preparation method" public (announcement) number is CN110890691A, "a constant current source semiconductor laser drive circuit with automatic temperature control" The publication (announcement) number is CN 110086084A, and the publication (announcement) number is CN 110752508 A for the preparation method of a DFB semiconductor laser with wide temperature operation. However, so far, there is no related application that adopts the technical solution described in the present application.

SUMMARY OF THE INVENTION

The purpose of this utility model is to provide a photoelectric module assembly with constant temperature control function, which combines a light emitting assembly (abbreviated as LD assembly), a light receiving assembly (abbreviated as PD assembly), related integrated circuit chips, related electronic components, negative temperature coefficient The thermistor (NTC film resistor for short) and semiconductor thermoelectric cooler (TEC thermoelectric cooler for short) are organically integrated to solve the problems of large volume, poor process quality consistency and temperature control caused by the use of discrete assembly technology. Insensitive, so that the photoelectric performance parameters of semiconductor lasers cannot be precisely controlled.

The technical solution adopted is: using a ceramic or glass substrate 1 as a carrier, on the front of the ceramic or glass substrate 1, a light emitting component (LD component for short), a light receiving component (PD component for short), related integrated circuit chips, related Electronic components, negative temperature coefficient thermistors (referred to as NTC thin film resistors), etc. are integrated into one; semiconductor thermoelectric coolers (referred to as TEC thermoelectric coolers) are organically integrated on the back of the ceramic or glass substrate 1 , The electrode is led out in a leadless way to achieve surface-mount miniaturization and high-reliability assembly applications. The schematic diagram of the integrated integrated structure is shown in Figure 2, and the specific structure is described as follows:

A photoelectric module assembly with constant temperature control function described in the utility model comprises: a ceramic or glass substrate 1, a light emitting assembly 2, a light receiving assembly 3, an integrated circuit chip 4, a chip component 5, an NTC thin film resistor 6. The top metal electrode 7 of the photoelectric module assembly, and the TEC thermoelectric cooler 200 is integrated.

The integrated TEC thermoelectric cooler 200 includes: an integrated TEC p-type semiconductor 201, an integrated TEC n-type semiconductor 202, an integrated TEC top metal electrode 203, an integrated TEC bottom metal electrode 204, an integrated TEC planar negative electrode 205, an integrated TEC planar surface Type positive electrode 206, integrated TEC first insulating dielectric isolation layer 207, integrated TEC second insulating dielectric isolation layer 208, integrated TEC silicon dioxide buffer layer 209.

The upper layer of the ceramic or glass substrate 1 is the NTC thin film resistor 6, the top metal electrode 7 of the optoelectronic module assembly, and the upper layer of the top metal electrode 7 of the optoelectronic module assembly is assembled with the light emission component 2, the light The receiving component 3 , the integrated circuit chip 4 , and the chip component 5 .

The lower layer of the ceramic or glass substrate 1 is the integrated TEC silicon dioxide buffer layer 209, and the lower layer of the integrated TEC silicon dioxide buffer layer 209 is the integrated TEC top metal electrode 203, the integrated TEC first layer The insulating dielectric isolation layer 207, the lower layer of the integrated TEC top metal electrode 203 is the integrated TEC p-type semiconductor 201, the integrated TEC n-type semiconductor 202, the integrated TEC first insulating dielectric isolation layer 207, the integrated TEC The p-type semiconductor 201 and the integrated TEC n-type semiconductor 202 are isolated by the first insulating dielectric isolation layer 207 of the integrated TEC, and the upper layer of the integrated TEC bottom metal electrode 204 is the TEC p-type semiconductor 201, the The integrated TEC n-type semiconductor 202 and the first insulating dielectric isolation layer 207 of the integrated TEC.

The lower layers of the two ends of the integrated TEC bottom metal electrode 204 are the integrated TEC planar negative electrode 205 and the integrated TEC planar positive electrode 206 .

The lower middle layer of the integrated TEC bottom metal electrode 204 except for both ends is the second insulating dielectric isolation layer 208 of the integrated TEC.

Because the utility model adopts the integrated integration technology, the light emitting assembly (abbreviated as LD assembly), the light receiving assembly (abbreviated as PD assembly), related integrated circuit chips, related electronic components, negative temperature coefficient thermistor (abbreviated as NTC film) There is no gap contact between the semiconductor thermoelectric cooler (referred to as the TEC thermoelectric cooler), and it belongs to the inter-atomic contact, which can transfer the heat of the light emitting component (referred to as the LD component) to the NTC to the greatest extent and fastest. The thin film resistor, after signal processing, quickly transmits the signal to the semiconductor thermoelectric cooler (TEC) to control the current direction of the semiconductor thermoelectric refrigeration unit, control the frequency of heating or cooling, so as to achieve precise temperature control to solve the photoelectric performance of semiconductor lasers Precise control of parameters.

The advantages of the utility model are: 1. the use of light emitting components (abbreviated as LD components), light receiving components (abbreviated as PD components), related integrated circuit chips, related electronic components, and negative temperature coefficient thermistors (abbreviated as NTC thin film resistors) , Semiconductor thermoelectric cooler (referred to as TEC thermoelectric cooler) integrated integration method, realizes the gapless contact between NTC thin film resistor and light emitting component (abbreviated as LD component), and is inter-atomic contact, which can maximize and fastest The heat of the light emitting component (LD component for short) is conducted to the NTC thin film resistor to quickly control the semiconductor thermoelectric cooler (TEC) to achieve the purpose of highly sensitive temperature control; ② When the temperature of the external working environment of the temperature control device changes, The variation range of the working environment temperature of the internal chip can be controlled within ±1.5°C of the set temperature, thereby reducing the temperature drift range of the relevant performance parameters of the light emitting component (LD component for short); Reduce the thermal conduction resistance and speed up the heat dissipation, therefore, can improve the long-term reliability of the device; ④ Save externally attached light emitting components (LD components for short), light receiving components (PD components for short), related integrated circuit chips, and related electronic components , Negative temperature coefficient thermistor (referred to as NTC film resistor), semiconductor thermoelectric cooler (referred to as TEC thermoelectric cooler) assembly space, greatly reducing the size of the device package, from plug-in package to surface mount package, Greatly improve the reliability of the package; ⑤The shape and size of the semiconductor thermoelectric cooler (TEC) and the negative temperature coefficient thermistor (NTC) can be set according to the shape and size of the photoelectric module components, which greatly enhances the ability to customize; (6) The p-type semiconductor of the integrated TEC thermoelectric cooler and the n-type semiconductor are completely filled and separated by an insulating medium with excellent heat dissipation, and the heat dissipation rate is much higher than that of the separated TEC thermoelectric cooler, which further improves the reliability of the product .

The device produced by the utility model is widely used in environmental atmosphere detection, communication, aerospace, aviation, ships, precision instruments, geological exploration, oil exploration, other field operations, industrial control, etc. When the external environment temperature changes, the equipment must have high It has broad market prospects in the occasions where it is used with high precision and high stability.

Description of drawings

FIG. 1 is a schematic diagram of the assembly structure of an existing optoelectronic module assembly.

In Figure 1: 1 is a ceramic or glass substrate, 2 is a light emitting component, 3 is a light receiving component, 4 is an integrated circuit chip, 5 is a chip component, 6 is an NTC thin film resistor, and 7 is the top metal of the photoelectric module component Electrodes, 100 is a discrete TEC thermoelectric cooler, 101 is a discrete TEC p-type semiconductor, 102 is a discrete TEC n-type semiconductor, 103 is a discrete TEC p-type semiconductor and n-type semiconductor top surface interconnect conductor, 104 is a discrete TEC p-type Semiconductor and n-type semiconductor bottom surface interconnection conductor, 105 is the discrete TEC negative electrode lead, 106 is the discrete TEC positive electrode lead, 107 is the discrete TEC top surface ceramic substrate, 108 is the discrete TEC bottom surface ceramic substrate, 109 is the discrete TEC top surface Surface metal bonding layer, 110 is the metal bonding layer on the bottom surface of the discrete TEC.

FIG. 2 is a schematic structural diagram of an integrated photoelectric module assembly with a constant temperature control function according to the present invention.

In Figure 2: 1 is a ceramic or glass substrate, 2 is a light emitting component, 3 is a light receiving component, 4 is an integrated circuit chip, 5 is a chip component, 6 is an NTC thin film resistor, and 7 is the top metal of the photoelectric module component Electrodes, 200 is an integrated TEC thermoelectric cooler, 201 is an integrated TEC p-type semiconductor, 202 is an integrated TEC n-type semiconductor, 203 is an integrated TEC top metal electrode, 204 is an integrated TEC bottom metal electrode, and 205 is an integrated TEC planar negative electrode. Electrodes, 206 is an integrated TEC planar positive electrode, 207 is an integrated TEC first insulating dielectric isolation layer, 208 is an integrated TEC second insulating dielectric isolation layer, and 209 is an integrated TEC silicon dioxide buffer layer.

Detailed ways

Example:

1. An optoelectronic module assembly with constant temperature control function, the integrated TEC p-type semiconductor 201 adopts p-type bismuth telluride semiconductor material, and the p-type bismuth telluride semiconductor material is Bi ₂ Te ₃ -Sb ₂ Te ₃ , The thickness of the integrated TEC p-type semiconductor 201 is 0.2mm-0.6mm.

The integrated TEC n-type semiconductor 202 adopts n-type bismuth telluride semiconductor material, the n-type bismuth telluride semiconductor material is Bi ₂ Te ₃ -Bi ₂ Se ₃ , and the thickness of the integrated TEC n-type semiconductor 202 is 0.2 mm -0.6mm.

2. A photoelectric module assembly with constant temperature control function, the materials of the integrated TEC top metal electrode 203 and the integrated TEC bottom metal electrode 204 are nickel-chromium-copper-nickel-chromium-gold composite conductors.

3. A photoelectric module assembly with constant temperature control function, the material of the ceramic or glass substrate 1 is aluminum oxide, beryllium oxide or glass-ceramic.

4. An optoelectronic module assembly with constant temperature control function, the materials of the integrated TEC first insulating dielectric isolation layer 207 and the integrated TEC second insulating dielectric isolation layer 208 are silicon dioxide or aluminum oxide.

By adopting the photoelectric module components with constant temperature control function integrated by the above solution, the temperature difference ΔT between the cold end and the hot end can reach more than 70°C at room temperature, and in the working environment of -65°C to 125°C, the temperature control accuracy and stability are Significantly better than the temperature control effect of the split TEC device.

The above descriptions are only specific embodiments of the present invention, and are not intended to limit the protection scope of the present invention. For those skilled in the art, any obvious modifications, equivalent replacements, improvements, etc. made within the inventive concept of the present utility model shall fall within the protection scope of the present utility model.

Claims (10)

1. A photoelectric module assembly with constant temperature control function is characterized in that: comprising a ceramic or glass substrate (1), a light emitting assembly (2), a light receiving assembly (3), an integrated circuit chip (4), a chip type a component (5), an NTC thin film resistor (6), a top metal electrode (7) of a photoelectric module assembly, and an integrated TEC thermoelectric cooler (200); The integrated TEC thermoelectric cooler (200) includes: integrated TEC p-type semiconductor (201), integrated TEC n-type semiconductor (202), integrated TEC top metal electrode (203), integrated TEC bottom metal electrode (204), integrated TEC TEC planar negative electrode (205), integrated TEC planar positive electrode (206), integrated TEC first insulating dielectric isolation layer (207), integrated TEC second insulating dielectric isolation layer (208), integrated TEC silicon dioxide buffer layer (209); The upper layer of the ceramic or glass substrate (1) is the NTC thin film resistor (6), the top metal electrode (7) of the optoelectronic module assembly, and the upper layer of the top metal electrode (7) of the optoelectronic module assembly is assembled with the a light emitting component (2), the light receiving component (3), the integrated circuit chip (4), and the chip component (5); The lower layer of the ceramic or glass substrate (1) is the integrated TEC silicon dioxide buffer layer (209), and the lower layer of the integrated TEC silicon dioxide buffer layer (209) is the integrated TEC top metal electrode (203) , the integrated TEC first insulating dielectric isolation layer (207), the lower layer of the integrated TEC top metal electrode (203) is the integrated TEC p-type semiconductor (201), the integrated TEC n-type semiconductor (202) , an integrated TEC first insulating dielectric isolation layer (207), the integrated TEC p-type semiconductor (201) and the integrated TEC n-type semiconductor (202) are separated by the integrated TEC first insulating dielectric isolation layer ( 207) isolation, the upper layer of the integrated TEC bottom metal electrode (204) is the TEC p-type semiconductor (201), the integrated TEC n-type semiconductor (202), and the integrated TEC first insulating dielectric isolation layer (207 ); The lower layers of both ends of the integrated TEC bottom metal electrode (204) are the integrated TEC planar negative electrode (205) and the integrated TEC planar positive electrode (206); The middle lower layer of the integrated TEC bottom metal electrode (204) except for both ends is the second insulating dielectric isolation layer (208) of the integrated TEC. 2 . The photovoltaic module assembly with constant temperature control function according to claim 1 , wherein the integrated TEC p-type semiconductor ( 201 ) adopts p-type bismuth telluride semiconductor material. 3 . 3 . The photoelectric module assembly with constant temperature control function according to claim 2 , wherein the p-type bismuth telluride semiconductor material is Bi2Te3-Sb2Te3. 4 . 4. The optoelectronic module assembly with constant temperature control function according to claim 1 or 2, wherein the thickness of the integrated TEC p-type semiconductor (201) is 0.2mm-0.6mm. 5. The optoelectronic module assembly with a constant temperature control function according to claim 1, wherein the integrated TEC n-type semiconductor (202) adopts n-type bismuth telluride semiconductor material. 6 . The photoelectric module assembly with constant temperature control function according to claim 5 , wherein the n-type bismuth telluride semiconductor material is Bi2Te3-Bi2Se3. 7 . 7. The photoelectric module assembly with a constant temperature control function according to claim 1 or 5, wherein the thickness of the integrated TEC n-type semiconductor (202) is 0.2mm-0.6mm. 8. The photoelectric module assembly with a constant temperature control function according to claim 1, characterized in that: the materials of the integrated TEC top metal electrode (203) and the integrated TEC bottom metal electrode (204) are nickel-chromium-copper - Nickel-chromium-gold composite conductors. 9 . The photoelectric module assembly with constant temperature control function according to claim 1 , wherein the material of the ceramic or glass substrate ( 1 ) is aluminum oxide, beryllium oxide or glass-ceramic. 10 . 10. The optoelectronic module assembly with a constant temperature control function according to claim 1, wherein the integrated TEC first insulating dielectric isolation layer (207) and the integrated TEC second insulating dielectric isolation layer The material of (208) is silicon dioxide or aluminum oxide.

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