CN211700276U - Photoelectric module assembly with constant temperature control function - Google Patents
Photoelectric module assembly with constant temperature control function Download PDFInfo
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- CN211700276U CN211700276U CN202020556588.XU CN202020556588U CN211700276U CN 211700276 U CN211700276 U CN 211700276U CN 202020556588 U CN202020556588 U CN 202020556588U CN 211700276 U CN211700276 U CN 211700276U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000000919 ceramic Substances 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000005693 optoelectronics Effects 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 2
- CKVAZIGABLQNKJ-UHFFFAOYSA-N [Au].[Cr].[Ni].[Cu].[Cr].[Ni] Chemical compound [Au].[Cr].[Ni].[Cu].[Cr].[Ni] CKVAZIGABLQNKJ-UHFFFAOYSA-N 0.000 claims description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 10
- 230000010354 integration Effects 0.000 abstract description 4
- 238000004891 communication Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 239000003208 petroleum Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
An optoelectronic module assembly having thermostatic control functionality, comprising: the thermoelectric cooler comprises a ceramic or glass substrate, a light emitting assembly, a light receiving assembly, an integrated circuit chip, a chip component, an NTC film resistor, a top metal electrode of an optoelectronic module assembly and an integrated TEC thermoelectric cooler. The utility model discloses an integration technique organically integrates together light emission subassembly (being called LD subassembly for short), light receiving subassembly (being called PD subassembly for short), relevant integrated circuit chip, relevant electronic components, negative temperature coefficient's thermistor (being called NTC film resistor for short), semiconductor thermoelectric cooler (being called TEC thermoelectric cooler for short) to reach the accurate control of temperature, in order to solve the accurate control of photovoltaic module subassembly photoelectric property parameter. The method is widely applied to the fields of environmental atmosphere detection, communication, aerospace, aviation, ships, precision instruments, geological exploration, petroleum exploration, other field operations, industrial control and the like, and has wide market prospect.
Description
Technical Field
The utility model relates to a photovoltaic module subassembly particularly, relates to photovoltaic module subassembly with thermostatic control function.
Background
In the conventional optoelectronic module assembly with a constant temperature control function, a separated light emitting assembly (LD assembly for short), a light receiving assembly (PD assembly for short), a related integrated circuit chip, related electronic components, a negative temperature coefficient thermistor (NTC thin film resistor for short), a separated semiconductor thermoelectric cooler (TEC thermoelectric cooler for short) and the like are sealed in a housing in a clean environment by adopting conventional assembly technologies such as mounting, bonding and the like, as shown in fig. 1. The prior art adopts the discrete assembly technology, and is bulky, the assembly procedure is complicated, the yield is low, the process quality uniformity is difficult to guarantee, on the other hand, adopts the discrete assembly technology, and the heat conduction path is correspondingly too long, causes the great extension of heat signal feedback speed to influence the precision range of temperature control, further influence the occasion that semiconductor laser used at high accuracy, high stability, perhaps increase application system's the design degree of difficulty, complexity and use cost.
Therefore, the utility model discloses intend to adopt the integration technique, on the basis of original separation device equipment, organically integrate light emission subassembly (being abbreviated as LD subassembly), light receiving component (being abbreviated as PD subassembly), relevant integrated circuit chip, relevant electronic components, negative temperature coefficient's thermistor (being abbreviated as NTC film resistor), semiconductor thermoelectric cooler (being abbreviated as TEC thermoelectric cooler), solve above-mentioned problem.
Through retrieval, patents related to a temperature-controlled semiconductor laser in a Chinese patent database have a publication (announcement) number of CN 110707525A for a semiconductor laser temperature control device, a temperature control system and a control method thereof, a publication (announcement) number of CN 110600989A for a semiconductor laser and a preparation method thereof, a publication (announcement) number of CN110890691A for a semiconductor laser and a preparation method thereof, a publication (announcement) number of CN 110086084A for a constant-current source type semiconductor laser driving circuit with automatic temperature control, and a preparation method of a DFB semiconductor laser with wide temperature operation, and a publication (announcement) number of CN 110752508A. However, until now, there is no related application adopting the technical solution described in the present application.
Disclosure of Invention
The utility model aims at providing a photovoltaic module subassembly with thermostatic control function, with the light emission subassembly (being short for LD subassembly), the light receiving module (being short for PD subassembly), relevant integrated circuit chip, relevant electronic components, negative temperature coefficient's thermistor (being short for NTC film resistor), semiconductor thermoelectric cooler (being short for TEC thermoelectric cooler) is integrated organically in an organic whole, solve beyond that to adopt the discrete package assembly technique to cause bulky, the process quality uniformity is poor, temperature control is insensitive, so that the problem in the aspect of the accurate control of semiconductor laser photoelectricity performance parameter can not be realized.
The technical scheme is as follows: a ceramic or glass substrate 1 is taken as a carrier, and a light emitting component (called LD component for short), a light receiving component (called PD component for short), a related integrated circuit chip, a related electronic component, a negative temperature coefficient thermistor (called NTC film resistor for short) and the like are integrated on the front surface of the ceramic or glass substrate 1; a semiconductor thermoelectric cooler (TEC for short) is organically integrated on the back of a ceramic or glass substrate 1, and a pin-free mode is adopted for electrode leading out, so that surface-mounted miniaturized high-reliability assembly application is realized. The integrated structure is schematically shown in fig. 2, and the specific structure is described as follows:
a photovoltaic module subassembly with thermostatic control function, include: the thermoelectric cooler comprises a ceramic or glass substrate 1, a light emitting assembly 2, a light receiving assembly 3, an integrated circuit chip 4, a chip component 5, an NTC thin film resistor 6, a top metal electrode 7 of an optoelectronic module assembly and an integrated TEC thermoelectric cooler 200.
The integrated TEC thermoelectric cooler 200 comprises: the integrated TEC device comprises an integrated TEC p-type semiconductor 201, an integrated TEC n-type semiconductor 202, an integrated TEC top metal electrode 203, an integrated TEC bottom metal electrode 204, an integrated TEC planar negative electrode 205, an integrated TEC planar positive electrode 206, an integrated TEC first insulating medium isolation layer 207, an integrated TEC second insulating medium isolation layer 208 and an integrated TEC silicon dioxide buffer layer 209.
The upper layer of the ceramic or glass substrate 1 is the NTC thin film resistor 6 and the top metal electrode 7 of the photoelectric module assembly, and the upper layer of the top metal electrode 7 of the photoelectric module assembly is assembled with the light emitting assembly 2, the light receiving assembly 3, the integrated circuit chip 4 and the chip component 5.
The lower layer of the ceramic or glass substrate 1 is the integrated TEC silicon dioxide buffer layer 209, the lower layer of the integrated TEC silicon dioxide buffer layer 209 is the integrated TEC top metal electrode 203 and the integrated TEC first insulating medium isolation layer 207, the lower layer of the integrated TEC top metal electrode 203 is the integrated TEC p-type semiconductor 201, the integrated TEC n-type semiconductor 202 and the integrated TEC first insulating medium isolation layer 207, the integrated TEC p-type semiconductor 201 and the integrated TEC n-type semiconductor 202 are isolated by the integrated TEC first insulating medium isolation layer 207, and the upper layer of the integrated TEC bottom metal electrode 204 is the integrated TEC p-type semiconductor 201, the integrated TEC n-type semiconductor 202 and the integrated TEC first insulating medium isolation layer 207.
The lower layers at two ends of the integrated TEC bottom metal electrode 204 are the integrated TEC planar negative electrode 205 and the integrated TEC planar positive electrode 206.
The middle lower layer of the integrated TEC bottom metal electrode 204 except for the two ends is the integrated TEC second insulating medium isolation layer 208.
The utility model discloses owing to adopted the integration technique, the light emission subassembly (be called LD subassembly for short), the light receiving module (be called PD subassembly for short), relevant integrated circuit chip, relevant electronic components, negative temperature coefficient's thermistor (be called NTC film resistor for short), realize gapless contact between the semiconductor thermoelectric cooler (be called TEC thermoelectric cooler for short), and belong to interatomic contact, but furthest, conduct the heat of light emission subassembly (be called LD subassembly for short) for NTC film resistor the fastest, after signal processing, with signal transmission semiconductor thermoelectric cooler (TEC) rapidly, with the current direction of control semiconductor thermoelectric cooling unit, control intensification or cooling frequency, thereby reach the accurate control of temperature, with the accurate control of solving semiconductor laser photoelectricity performance parameter.
The utility model has the advantages that: the integrated integration method of the light emitting assembly (LD assembly for short), the light receiving assembly (PD assembly for short), the related integrated circuit chip, the related electronic component, the negative temperature coefficient thermistor (NTC film resistor for short) and the semiconductor thermoelectric cooler (TEC thermoelectric cooler for short) is adopted, so that gapless contact between the NTC film resistor and the light emitting assembly (LD assembly for short) is realized, the NTC film resistor belongs to interatomic contact, the heat of the light emitting assembly (LD assembly for short) can be conducted to the NTC film resistor to the greatest extent and the fastest extent, the semiconductor thermoelectric cooler (TEC) is controlled quickly, and the purpose of high-sensitivity temperature control is achieved; when the external working environment temperature of the temperature control device changes, the change range of the working environment temperature of the chip inside the temperature control device can be controlled within +/-1.5 ℃ of the set temperature, so that the temperature drift range of relevant performance parameter indexes of a light emitting component (called LD component for short) is reduced; the direct contact between atoms is realized, the heat conduction impedance is greatly reduced, and the heat dissipation speed is accelerated, so that the long-term reliability of the device can be improved; saving the assembly space of an externally-attached light emitting assembly (LD assembly for short), a light receiving assembly (PD assembly for short), a related integrated circuit chip, a related electronic component, a negative temperature coefficient thermistor (NTC film resistor for short) and a semiconductor thermoelectric cooler (TEC thermoelectric cooler for short), reducing the packaging volume of the device in a large ratio, and greatly improving the packaging reliability because the surface-mounted packaging is reduced from the plug-in packaging; the shape and size of the semiconductor thermoelectric cooler (TEC) and the negative temperature coefficient thermistor (NTC) can be set automatically according to the shape and size of the photoelectric module assembly, thereby greatly improving the customized customization capability; (6) the p-type semiconductor and the n-type semiconductor of the integrated TEC thermoelectric refrigerator are completely filled and isolated seamlessly by an insulating medium with excellent heat dissipation, the heat dissipation speed is far higher than that of the separated TEC thermoelectric refrigerator, and the reliability of the product is further improved.
Adopt the utility model discloses the device wide application of production requires when external environment temperature changes in requirements such as environmental atmosphere detection, communication, space flight, aviation, boats and ships, precision instruments, geological prospecting, oil exploration, other field work, industrial control, equips the occasion that must have high accuracy, high stability and use, has wide market prospect.
Drawings
Fig. 1 is a schematic view of an assembly structure of a conventional photovoltaic module assembly.
In fig. 1: 1 is a ceramic or glass substrate, 2 is a light emitting assembly, 3 is a light receiving assembly, 4 is an integrated circuit chip, 5 is a chip component, 6 is an NTC thin film resistor, 7 is a top metal electrode of an optoelectronic module assembly, 100 is a discrete TEC thermoelectric cooler, 101 is a discrete TEC p-type semiconductor, 102 is a discrete TEC n-type semiconductor, 103 is a discrete TEC p-type semiconductor and n-type semiconductor top surface interconnection conductor, 104 is a discrete TEC p-type semiconductor and n-type semiconductor bottom surface interconnection conductor, 105 is a discrete TEC negative electrode lead, 106 is a discrete TEC positive electrode lead, 107 is a discrete TEC top surface ceramic substrate, 108 is a discrete TEC bottom surface ceramic substrate, 109 is a discrete TEC top surface metal bonding layer, and 110 is a discrete TEC bottom surface metal bonding layer.
Fig. 2 is the integrated optoelectronic module assembly structure diagram with constant temperature control function of the present invention.
In fig. 2: 1 is a ceramic or glass substrate, 2 is a light emitting assembly, 3 is a light receiving assembly, 4 is an integrated circuit chip, 5 is a chip component, 6 is an NTC thin film resistor, 7 is a top metal electrode of an optoelectronic module assembly, 200 is an integrated TEC thermoelectric cooler, 201 is an integrated TEC p-type semiconductor, 202 is an integrated TEC n-type semiconductor, 203 is an integrated TEC top metal electrode, 204 is an integrated TEC bottom metal electrode, 205 is an integrated TEC planar negative electrode, 206 is an integrated TEC planar positive electrode, 207 is an integrated TEC first insulating medium isolating layer, 208 is an integrated TEC second insulating medium isolating layer, and 209 is an integrated TEC silicon dioxide buffer layer.
Detailed Description
Example (b):
1. the integrated TEC p-type semiconductor 201 is made of a p-type bismuth telluride semiconductor material which is Bi2Te3-Sb2Te3The thickness of the integrated TEC p-type semiconductor 201 is 0.2mm-0.6 mm.
The integrated TEC n-type semiconductor 202 is made of n-type bismuth telluride semiconductor material which is Bi2Te3-Bi2Se3The thickness of the integrated TEC n-type semiconductor 202 is 0.2mm to 0.6 mm.
2. The integrated TEC top metal electrode 203 and the integrated TEC bottom metal electrode 204 are made of nickel-chromium-copper-nickel-chromium-gold composite conductors.
3. The photoelectric module component with the constant temperature control function is characterized in that the ceramic or glass substrate 1 is made of aluminum oxide, beryllium oxide or microcrystalline glass.
4. The photoelectric module assembly with the constant temperature control function is characterized in that the integrated TEC first layer insulating medium isolation layer 207 and the integrated TEC second layer insulating medium isolation layer 208 are made of silicon dioxide or aluminum oxide.
By adopting the integrated photoelectric module component with the constant temperature control function, the temperature difference delta T between the cold end and the hot end can reach more than 70 ℃ at normal temperature, and the temperature control precision and stability are obviously superior to the temperature control effect of a separated TEC device in the working environment of-65-125 ℃.
The above description is only for the specific embodiments of the present invention, and is not intended to limit the scope of the present invention. It will be understood by those skilled in the art that any obvious modifications, equivalent substitutions, improvements and the like can be made within the inventive concept of the present invention.
Claims (10)
1. The utility model provides a photovoltaic module subassembly with thermostatic control function which characterized by: the integrated TEC thermoelectric cooler comprises a ceramic or glass substrate (1), a light emitting assembly (2), a light receiving assembly (3), an integrated circuit chip (4), a chip component (5), an NTC thin film resistor (6), a top metal electrode (7) of a photoelectric module assembly and an integrated TEC thermoelectric cooler (200);
the integrated TEC thermoelectric cooler (200) comprises: the integrated TEC structure comprises an integrated TEC p-type semiconductor (201), an integrated TEC n-type semiconductor (202), an integrated TEC top metal electrode (203), an integrated TEC bottom metal electrode (204), an integrated TEC planar negative electrode (205), an integrated TEC planar positive electrode (206), an integrated TEC first insulating medium isolating layer (207), an integrated TEC second insulating medium isolating layer (208) and an integrated TEC silicon dioxide buffer layer (209);
the upper layer of the ceramic or glass substrate (1) is the NTC thin-film resistor (6) and the top metal electrode (7) of the photovoltaic module assembly, and the upper layer of the top metal electrode (7) of the photovoltaic module assembly is assembled with the light emitting assembly (2), the light receiving assembly (3), the integrated circuit chip (4) and the chip component (5);
the lower layer of the ceramic or glass substrate (1) is the integrated TEC silicon dioxide buffer layer (209), the lower layer of the integrated TEC silicon dioxide buffer layer (209) is the integrated TEC top metal electrode (203) and the integrated TEC first insulating medium isolating layer (207), the lower layer of the integrated TEC top metal electrode (203) is the integrated TEC p-type semiconductor (201), the integrated TEC n-type semiconductor (202) and the integrated TEC first insulating medium isolating layer (207), the integrated TEC p-type semiconductor (201) and the integrated TEC n-type semiconductor (202) are isolated by the integrated TEC first insulating medium isolating layer (207), the upper layer of the integrated TEC bottom metal electrode (204) is the TEC p-type semiconductor (201), the integrated TEC n-type semiconductor (202) and the integrated TEC first insulating medium isolating layer (207);
the lower layers at two ends of the integrated TEC bottom metal electrode (204) are the integrated TEC planar negative electrode (205) and the integrated TEC planar positive electrode (206);
and the middle lower layer of the integrated TEC bottom metal electrode (204) except two ends is the integrated TEC second insulating medium isolating layer (208).
2. The photovoltaic module assembly with thermostatic control of claim 1, wherein: the integrated TEC p-type semiconductor (201) is made of a p-type bismuth telluride semiconductor material.
3. The photovoltaic module assembly with thermostatic control of claim 2, wherein: the p-type bismuth telluride semiconductor material is Bi2Te3-Sb2Te 3.
4. An optoelectronic module assembly with thermostatic control as claimed in claim 1 or 2 wherein: the thickness of the integrated TEC p-type semiconductor (201) is 0.2mm-0.6 mm.
5. The photovoltaic module assembly with thermostatic control of claim 1, wherein: the integrated TEC n-type semiconductor (202) is made of n-type bismuth telluride semiconductor material.
6. The photovoltaic module assembly with thermostatic control of claim 5, wherein: the n-type bismuth telluride semiconductor material is Bi2Te3-Bi2Se 3.
7. An optoelectronic module assembly as claimed in claim 1 or 5, wherein: the thickness of the integrated TEC n-type semiconductor (202) is 0.2mm-0.6 mm.
8. The photovoltaic module assembly with thermostatic control of claim 1, wherein: the integrated TEC top metal electrode (203) and the integrated TEC bottom metal electrode (204) are made of a nickel-chromium-copper-nickel-chromium-gold composite conductor.
9. The photovoltaic module assembly with thermostatic control of claim 1, wherein: the ceramic or glass substrate (1) is made of aluminum oxide, beryllium oxide or microcrystalline glass.
10. The photovoltaic module assembly with thermostatic control of claim 1, wherein: the first insulating medium isolation layer (207) of the integrated TEC and the second insulating medium isolation layer (208) of the integrated TEC are made of silicon dioxide or aluminum oxide.
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| CN202020556588.XU CN211700276U (en) | 2020-04-15 | 2020-04-15 | Photoelectric module assembly with constant temperature control function |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370396A (en) * | 2020-04-15 | 2020-07-03 | 广东鸿芯科技有限公司 | Photoelectric module assembly with constant temperature control function and manufacturing method thereof |
| CN114374145A (en) * | 2022-01-12 | 2022-04-19 | 南京大学 | REC semiconductor laser array wavelength control system |
| CN115230999A (en) * | 2022-07-11 | 2022-10-25 | 航天行云科技有限公司 | Spacecraft thermal control structure and spacecraft |
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2020
- 2020-04-15 CN CN202020556588.XU patent/CN211700276U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370396A (en) * | 2020-04-15 | 2020-07-03 | 广东鸿芯科技有限公司 | Photoelectric module assembly with constant temperature control function and manufacturing method thereof |
| CN114374145A (en) * | 2022-01-12 | 2022-04-19 | 南京大学 | REC semiconductor laser array wavelength control system |
| CN114374145B (en) * | 2022-01-12 | 2023-09-29 | 南京大学 | REC semiconductor laser array wavelength control system |
| CN115230999A (en) * | 2022-07-11 | 2022-10-25 | 航天行云科技有限公司 | Spacecraft thermal control structure and spacecraft |
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