CN211445041U - Miniature semiconductor gas-sensitive sensor - Google Patents
Miniature semiconductor gas-sensitive sensor Download PDFInfo
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- CN211445041U CN211445041U CN201922420387.7U CN201922420387U CN211445041U CN 211445041 U CN211445041 U CN 211445041U CN 201922420387 U CN201922420387 U CN 201922420387U CN 211445041 U CN211445041 U CN 211445041U
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Abstract
The utility model discloses a miniature semiconductor gas sensor, it includes sensitive test structure and packaging structure, and this packaging structure includes shading gas permeable cover board, and shading gas permeable cover board combines to form a gas cavity with sensitive test structure is sealed, and sensitive test structure includes the glass basement and the stromatolite sets up zone of heating, insulating layer and the gaseous sensitive material layer in proper order on the first face of glass basement, gaseous sensitive material layer still is in with the setting test layer electricity on the insulating layer is connected. The micro semiconductor gas sensor provided by the embodiment has a simple and reliable processing technology, and the whole sensor has good thermal insulation performance; and the sensor has a firmer structure, and can be used in the environment of being impacted and vibrated.
Description
Technical Field
The utility model relates to a gas sensor, in particular to miniature semiconductor gas sensor belongs to electron device technical field.
Background
The gas sensor is widely applied to detecting combustible gas, toxic gas and atmospheric components, the micro-hotplate type gas sensor based on the MEMS process becomes a research hotspot in the field of the current gas sensor by the characteristics of low power consumption, small volume and easy integration, the existing MEMS gas sensor mostly adopts platinum as a heating wire, and the suspension of the micro-hotplate is realized by adopting a back bulk silicon processing technology.
The structure of the MEMS gas sensor commonly used at present mainly takes a silicon substrate as a main part, an insulating layer, a heating layer, a testing layer and the like are formed on the silicon substrate, the structure is relatively complex, and the preparation process mainly comprises the process technologies of forming micropores by deep silicon etching, depositing the insulating layer/barrier layer/seed layer, preparing pad, photoetching for multiple times and the like; in order to improve the heating efficiency, a cantilever beam type heating structure is generally adopted, however, the current silicon-based MEMS gas sensor has the defects of low yield, poor performance, easy damage of devices, and the like.
In order to solve the problems of the MEMS gas sensor: the existing silicon-based MEMS gas sensor mainly combines an MEMS micro-processing technology, utilizes a film deposition technology to prepare the deposition of an insulating layer, a barrier layer and a seed layer, then respectively deposits a metal heating layer and a testing layer, forms the main structure of the sensor through a wet method or dry etching technology, then deposits sensitive materials through modes of sputtering, spraying, printing and the like, and finishes the integral structure of the MEMS gas sensor after an aging test; however, such a MEMS gas sensor has the following problems: on one hand, a plurality of layers of films are deposited on the silicon-based material, particularly the multilayer composition of the metal film and films such as silicon oxide, silicon nitride and the like easily forms high stress, so that the device fails; secondly, the existing MEMS gas sensor needs to work at a certain temperature, and due to the superposition of multiple materials, the thermal expansion coefficient mismatch among the materials is easily caused, so that the device is damaged; and thirdly, the suspended structure is damaged when sensitive materials are printed after the back cavity is etched.
Disclosure of Invention
The main object of the utility model is to provide a miniature semiconductor gas sensor to overcome not enough among the prior art.
In order to achieve the purpose of the invention, the technical scheme adopted by the utility model comprises:
the embodiment of the utility model provides a miniature semiconductor gas sensor, it includes: sensitive test structures and packaging structures, wherein,
the packaging structure comprises a shading and ventilating cover plate, the shading and ventilating cover plate is combined with the sensitive testing structure in a sealing mode to form a gas chamber, and the gas chamber is communicated with at least one gas hole formed in the shading and ventilating cover plate;
sensitive test structure includes the glass substrate and in proper order stromatolite setting zone of heating, insulating layer and the gas sensitive material layer on the first face of glass substrate, the gas sensitive material layer still with set up test layer electricity on the insulating layer is connected, at least the gas sensitive material layer is set up in the gas chamber, and, the second face of glass substrate still is provided with the back of the body chamber, just the gas sensitive material layer is set up correspondingly the top in back of the body chamber, wherein, first face with the second face sets up back to back.
Furthermore, the top of the back cavity is provided with a first area and a second area, the thickness of the glass substrate of the first area is smaller than that of the glass substrate of the second area to form a cantilever structure, and the gas sensitive material layer is correspondingly arranged above the second area of the glass substrate.
Furthermore, the thickness of the glass substrate is 100-1000 μm, the thickness of the cantilever structure is 10-100 μm, and the width is 10-100 μm.
Further, the shading and ventilating cover plate comprises an opaque glass cover plate.
Further, the diameter of the air hole is 10-500 μm.
Furthermore, the material of the heating layer comprises any one or the combination of more than two of Pt, Au, Ag and Cu.
Further, the thickness of the heating layer is 100-5000 nm.
Furthermore, the material of the insulating layer comprises silicon oxide and/or silicon nitride.
Preferably, the thickness of the insulating layer is 10 to 5000 nm.
Further, the material of the gas sensitive material layer comprises a semiconductor metal oxide.
Further, the thickness of the gas sensitive material layer is 100-5000 nm.
Preferably, the gas sensitive material layer has a three-dimensional porous structure formed by interweaving a plurality of porous conductive fibers. The porous conductive fibers may be selected from those well known in the art.
Preferably, the porous conductive fiber comprises a plurality of semiconductor metal oxide nanoparticles which are closely packed, and sulfonated graphene and thiophene oligomers are distributed among at least part of the semiconductor metal oxide nanoparticles.
Furthermore, the diameter of the porous conductive fiber is 0.5-20 μm, the length is more than 10 μm, the porosity is 60-85%, and the aperture of the contained hole is 20-100 nm.
Further, the porous conductive fiber comprises the following components in a mass ratio of 90-95: 0.01-0.5: 2-5 of semiconducting metal oxide nanoparticles, sulfonated graphene, and thiophene oligomers.
Further, the semiconducting metal oxide nanoparticles may be copper oxide nanoparticles, silver oxide nanoparticles, nickel oxide nanoparticles, etc., and have a particle size of 10 to 100 nm.
Furthermore, the thiophene oligomer contains 2-20 monomer units and has a molecular weight of 800-3000 g/mol.
Further, the test layer is formed by printing conductive ink containing metal nano particles, and the metal element contained in the metal nano particles is the same as that contained in the semiconductor metal oxide nano particles forming the gas sensitive material layer.
Preferably, the metal nanoparticles include Au, Ag, Cu or Ni nanoparticles.
Preferably, the thickness of the test layer is 100-5000 nm.
Furthermore, the second face of glass substrate still is provided with first pad and second pad, first pad through set up first electrically conductive passageway in the glass substrate with the zone of heating is connected, the second pad through set up second electrically conductive passageway in the glass substrate with the test layer is connected.
Furthermore, the first conductive channel comprises a first through hole penetrating through the glass substrate along the thickness direction and a conductive material filled in the first through hole, and the second conductive channel comprises a second through hole penetrating through the glass substrate along the thickness direction and a conductive material filled in the second through hole.
The depth of the first through hole and the second through hole is 50-1000 mu m.
Further, the conductive material includes a conductive metal material.
The embodiment of the utility model provides a still provide a preparation miniature semiconductor gas sensor's method, it includes:
providing a glass substrate, processing a second surface of the glass substrate to form a back cavity, and enabling the thickness of a first area at the top of the back cavity to be smaller than that of a second area to form more than two cantilever structures arranged at intervals, wherein the first area is distributed around the second area;
sequentially manufacturing a heating layer, an insulating layer, a testing layer and a gas sensitive material layer which are arranged in a laminated manner on the first surface of the glass substrate, and electrically connecting the gas sensitive material layer with the testing layer;
providing an opaque glass cover plate with air holes, packaging and combining the opaque glass cover plate and the glass substrate, further enclosing and forming an air chamber between the opaque glass cover plate and the glass substrate, at least encapsulating the gas sensitive material layer in the air chamber, and communicating the air chamber with the air holes on the opaque glass cover plate.
Specifically, the method specifically comprises the following steps: dissolving thiophene oligomer in an organic solvent to form a dispersion liquid, sequentially adding sulfonated graphene and semiconductor metal oxide nanoparticles into the dispersion liquid, uniformly dispersing to form printing ink, printing the printing ink on an insulating layer, and drying and aging to form a gas sensitive material layer; drying and aging the printing ink to form a plurality of porous conductive fibers which are interwoven with each other; wherein the mass ratio of the semiconductor metal oxide nanoparticles to the sulfonated graphene to the thiophene oligomer in the printing ink is 90-95: 0.01-0.5: 2-5, the semiconductor metal oxide nano-particles can be copper oxide nano-particles, cuprous oxide nano-particles, silver oxide nano-particles, nickel oxide nano-particles and the like, the particle size of the semiconductor metal oxide nano-particles is 10-100nm, the thiophene oligomer contains 2-20 monomer units, and the molecular weight is 800-3000 g/mol.
Specifically, the method specifically comprises the following steps: a conductive ink containing metal nanoparticles, which may be Au, Ag, Cu or Ni nanoparticles, is printed onto the insulating layer, thereby forming a test layer, and the test layer is electrically connected to the gas sensitive material layer.
Further, the method further comprises the following steps: manufacturing a first pad and a second pad on a second surface of the glass substrate, and electrically connecting the first pad with a heating layer through a first conductive channel arranged in the glass substrate, and electrically connecting the second pad with the testing layer through a second conductive channel arranged in the glass substrate; wherein the first face and the second face are oppositely arranged.
Compared with the prior art, the micro semiconductor gas sensor provided by the embodiment of the utility model is formed by combining the glass substrate and the opaque glass cover plate in a sealing way, the thermal expansion coefficient of the micro semiconductor gas sensor is controllable, and the problem of the thermal expansion coefficient can be effectively avoided; the micro semiconductor gas sensor provided by the embodiment of the utility model has good insulation performance and can effectively avoid short circuit; additionally, the embodiment of the utility model provides a miniature semiconductor gas sensor, packaging technology is simple, corrosion-resistant, and the bad problem of device that etching process caused can be avoided to easier shaping cantilever structure, improves the device yield.
Drawings
FIG. 1 is a schematic cross-sectional view of a miniature semiconductor gas sensor according to an exemplary embodiment of the present invention;
FIG. 2 is a schematic diagram of a glass substrate in an exemplary embodiment of the invention;
fig. 3 is a schematic diagram of a manufacturing process of a cross-sectional structure of a micro semiconductor gas sensor according to an exemplary embodiment of the present invention.
Detailed Description
In view of the deficiencies in the prior art, the inventor of the present invention has made extensive studies and practices to provide the technical solution of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
Referring to fig. 1 and 2, in some more specific embodiments, a miniature semiconductor gas sensor provided by embodiments of the present invention includes a sensitive test structure and a package structure, wherein,
the packaging structure comprises a shading and air-permeable cover plate 100, the shading and air-permeable cover plate 100 is combined with the sensitive test structure in a sealing manner to form a gas chamber, and the gas chamber is communicated with at least one air hole 110 arranged on the shading and air-permeable cover plate;
the sensitive test structure includes glass substrate 10 and the laminating setting in proper order is in the zone of heating 30, insulating layer 40 and the gas sensitive material layer 90 on glass substrate 10 first face, gas sensitive material layer 90 still with set up test layer 60 on insulating layer 40 is electric is connected, at least gas sensitive material layer 90 is set up in the gas cavity to and, the second face of glass substrate 10 still is provided with the back of the body chamber, just gas sensitive material layer 90 is set up correspondingly the top in back of the body chamber, wherein, first face with the second face sets up back to back.
Specifically, the top of the back cavity of the glass substrate 10 has a first region and a second region, the thickness of the glass substrate in the first region is smaller than that of the glass substrate in the second region to form the cantilever structure 11, a pattern region is formed on the first surface of the glass substrate in the second region, and the gas sensitive material layer 90 is correspondingly disposed in the pattern region above the second region of the glass substrate; wherein, the thickness of the glass substrate 10 is 100-1000 μm, the thickness of the cantilever structure 11 is 10-100 μm, the width is 10-100 μm, the light-shielding and air-permeable cover plate 100 is an opaque glass cover plate, and the diameter of the air hole is 10-500 μm.
Specifically, the second surface of the glass substrate 10 is further provided with a first pad 70 and a second pad 80, the first pad 70 is electrically connected to the heating layer 30 through a first conductive path 20 provided in the glass substrate 10, and the second pad 80 is electrically connected to the test layer 60 through a second conductive path 50 provided in the glass substrate 10.
Specifically, the heating layer 60 may include a heating electrode and an extraction electrode connected to the heating electrode, the extraction electrode may be electrically connected to the heating electrode and the first conductive channel 20, the material of the heating layer includes any one or a combination of two or more of Pt, Au, Ag, and Cu, and the thickness of the heating layer is 100-; the test layer 30 may include a test electrode and an extraction electrode, the extraction electrode being mainly used to electrically connect the extraction electrode and the second conductive path 50; the gas sensitive material layer and the test electrode are enclosed in a gas chamber; the first conductive channel and the second conductive channel are both composed of a through hole penetrating through the glass substrate along the thickness direction and a conductive material filled in the through hole, and the conductive material can be a metal material and the like.
Specifically, the insulating layer comprises silicon oxide and/or silicon nitride, the thickness of the insulating layer is 10-5000nm, and the insulating layer is mainly used for an electrical isolation test layer and a heating layer.
Specifically, the material of the gas sensitive material layer 90 includes a semiconductor metal oxide, and the thickness is 100-5000 nm.
Specifically, the gas sensitive material layer is a three-dimensional porous structure formed by interweaving a plurality of porous conductive fibers. The porous conductive fibers may be selected from those well known in the art. But preferably, the porous conductive fiber comprises a plurality of semiconductor metal oxide nanoparticles which are closely packed, and sulfonated graphene and thiophene oligomer are distributed among at least part of the semiconductor metal oxide nanoparticles; the diameter of the porous conductive fiber is 0.5-20 μm, the length is more than 10 μm, the porosity is 60-85%, and the aperture of the contained hole is 20-100 nm; specifically, the porous conductive fiber comprises the following components in a mass ratio of 90-95: 0.01-0.5: 2-5 of semiconducting metal oxide nanoparticles, sulfonated graphene, and thiophene oligomers; for example, the semiconducting metal oxide nanoparticles may be copper oxide nanoparticles, silver oxide nanoparticles, nickel oxide nanoparticles, etc., the semiconducting metal oxide nanoparticles have a particle size of 10-100nm, the thiophene oligomer contains 2-20 monomer units and has a molecular weight of 800-3000 g/mol.
Specifically, the test layer is formed by printing conductive ink containing metal nanoparticles, and the metal elements contained in the metal nanoparticles are the same as the metal elements contained in the semiconductor metal oxide nanoparticles forming the gas sensitive material layer; for example, the metal nanoparticles include Au, Ag, Cu or Ni nanoparticles, and the thickness of the test layer is 100-5000 nm.
Specifically, the embodiment of the utility model provides a method for manufacturing miniature semiconductor gas sensor, form cantilever structure at the back cavity top of glass base substrate through hot pressing technology, then through interim bonding technology, fix the glass base that has cantilever structure and temporary substrate, then deposit in the middle figure region at glass substrate back cavity top and form heating layer, insulating layer and test layer, later through modes such as spraying, point glue with sensitive material coating in the middle region of glass base; and simultaneously, manufacturing a breathable glass upper cover, packaging and combining the glass upper cover and the glass substrate formed with the heating layer, the insulating layer and the testing layer in a bonding mode, and finally removing the temporary substrate to form the glass-based gas sensor.
Embodiment 1 referring to fig. 3, a method of a miniature semiconductor gas sensor mainly includes the following steps:
1) providing a graphite mold, and manufacturing a glass substrate 10 and an opaque glass cover plate 100 through the graphite mold by a hot pressing process, wherein the opaque glass cover plate 10 is provided with a cavity open cavity or a receiving groove, and the like, the opaque glass cover plate is provided with an air hole, a second surface (which can be understood as a back surface) of the glass substrate is provided with a back cavity, the top of the back cavity is provided with a first area and a second area, the thickness of the glass substrate in the first area is smaller than that of the glass substrate in the second area to form a cantilever beam structure 11, the first area is arranged around the second area, and the area of the first surface of the glass substrate corresponding to the second area is a pattern area;
2) temporarily bonding a temporary substrate a on the second surface of the glass base 10 by a temporary bonding process;
3) processing and forming a first through hole penetrating through the glass substrate 10 along a thickness direction in the glass substrate 10, and filling a conductive material (such as a metal like copper) in the first through hole to form a first conductive channel 20, wherein the length of the first conductive channel 20 is greater than or equal to the depth of the first through hole;
4) depositing any one or more than two metals of Pt, Au, Ag and Cu on the first surface of the glass substrate 10 to form a heating layer 30, and electrically connecting the heating layer 30 with the first conductive channel 20;
5) depositing an insulating layer 40 of silicon oxide or silicon nitride on the heating layer 30;
6) processing and forming a second through hole which continuously penetrates through the glass substrate 10 and the insulating layer 40 along the thickness direction in the glass substrate 10, and filling a conductive material (such as copper and other metals) in the second through hole to form a second conductive channel 50, wherein the length of the second conductive channel 50 is greater than or equal to the depth of the second through hole;
7) printing a conductive ink containing metal nanoparticles, which may be Au, Ag, Cu, or Ni nanoparticles, etc., onto the insulating layer 40 to form a test layer 60, and electrically connecting the test layer 60 with the second conductive path 50;
8) removing the temporary substrate a of the second surface of the glass base 10;
9) manufacturing a first bonding pad 70 and a second bonding pad 80 on a first surface of a glass substrate 10, and electrically connecting the first bonding pad 70 with a first conductive channel 20, and electrically connecting the second bonding pad 80 with a second conductive channel 50, wherein the first bonding pad and the second bonding pad are made of conductive materials such as metal;
10) dissolving thiophene oligomer in an organic solvent (such as acetonitrile, acetone and the like) to form a dispersion liquid, sequentially adding sulfonated graphene and semiconductor metal oxide nanoparticles into the dispersion liquid, uniformly dispersing to form printing ink, printing the printing ink on an insulating layer and/or a test layer, drying and aging to form a gas sensitive material layer 90, and electrically connecting the gas sensitive material layer 90 with the test layer 60; wherein, the printing ink is dried and aged to form a plurality of porous conductive fibers which are interwoven with each other; the mass ratio of the semiconductor metal oxide nanoparticles to the sulfonated graphene to the thiophene oligomer in the printing ink is 90-95: 0.01-0.5: 2-5, the semiconductor metal oxide nanoparticles can be copper oxide nanoparticles, cuprous oxide nanoparticles, silver oxide nanoparticles, nickel oxide nanoparticles and the like, the particle size of the semiconductor metal oxide nanoparticles is 10-100nm, the thiophene oligomer contains 2-20 monomer units, and the molecular weight is 800-3000 g/mol;
11) the non-transparent glass cover plate 100 and the glass substrate 10 are sealed and combined into a whole by adopting a bonding mode, so that the miniature semiconductor gas-sensitive sensor is formed, wherein a gas chamber is formed by enclosing the non-transparent glass cover plate 100 and the glass substrate 10, and is communicated with the outside through a gas hole on the non-transparent glass cover plate 100; the gas sensitive material layer 90 and the test layer 60 are enclosed in the gas chamber.
The gas sensors of the micro semiconductor manufactured in example 1 were used to detect gases such as nitrogen dioxide, carbon monoxide, and hydrogen sulfide:
placing the micro semiconductor gas sensor obtained in the embodiment 1 in a test environment, and respectively introducing 100-1000ppm of nitrogen dioxide, carbon monoxide and hydrogen sulfide into the test environment; the sensitivity of the miniature semiconductor gas sensor to nitrogen dioxide is 6.5-30.4, wherein when the input amount of nitrogen dioxide is 800ppm, the sensitivity of the gas sensor to nitrogen dioxide reaches 30.4, the sensitivity of the miniature semiconductor gas sensor to carbon monoxide reaches 5.5-37.6, wherein when the input amount of carbon monoxide is 900ppm, the sensitivity of the miniature semiconductor gas sensor to carbon monoxide reaches 37.6, the sensitivity of the miniature semiconductor gas sensor to hydrogen sulfide reaches 7-45.5, and when the input amount of hydrogen sulfide reaches 900ppm, the sensitivity of the miniature semiconductor gas sensor to hydrogen sulfide reaches 45.5.
Comparative example 1 a method of a miniature semiconductor gas sensor, which essentially comprises the following steps:
1) providing a graphite mold, and manufacturing a glass substrate 10 and a transparent glass cover plate 100 through the graphite mold through a hot pressing process, wherein a second surface (which can be understood as a back surface) of the glass substrate is provided with a back cavity, a first area and a second area are arranged on the top of the back cavity, the thickness of the glass substrate in the first area is smaller than that of the glass substrate in the second area to form a cantilever beam structure 11, the first area is arranged around the second area, and the area of the first surface of the glass substrate corresponding to the second area is a pattern area;
2) temporarily bonding a temporary substrate a on the second surface of the glass base 10 by a temporary bonding process;
3) processing and forming a first through hole penetrating through the glass substrate 10 along a thickness direction in the glass substrate 10, and filling a conductive material (such as a metal like copper) in the first through hole to form a first conductive channel 20, wherein the length of the first conductive channel 20 is greater than or equal to the depth of the first through hole;
4) depositing any one or more than two metals of Pt, Au, Ag and Cu on the first surface of the glass substrate 10 to form a heating layer 30, and electrically connecting the heating layer 30 with the first conductive channel 20;
5) depositing an insulating layer 40 of silicon oxide or silicon nitride on the heating layer 30;
6) processing and forming a second through hole which continuously penetrates through the glass substrate 10 and the insulating layer 40 along the thickness direction in the glass substrate 10, and filling a conductive material (such as copper and other metals) in the second through hole to form a second conductive channel 50, wherein the length of the second conductive channel 50 is greater than or equal to the depth of the second through hole;
7) printing a conductive ink containing metal nanoparticles, which may be Au, Ag, Cu, or Ni nanoparticles, etc., onto the insulating layer 40 to form a test layer 60, and electrically connecting the test layer 60 with the second conductive path 50;
8) removing the temporary substrate a of the second surface of the glass base 10;
9) manufacturing a first bonding pad 70 and a second bonding pad 80 on a first surface of a glass substrate 10, and electrically connecting the first bonding pad 70 with a first conductive channel 20, and electrically connecting the second bonding pad 80 with a second conductive channel 50, wherein the first bonding pad and the second bonding pad are made of conductive materials such as metal;
10) dissolving semiconductor metal oxide nanoparticles in an organic solvent (such as acetonitrile, acetone, etc.) to form a printing ink, printing the printing ink on the insulating layer and/or the test layer to form a gas sensitive material layer 90, and electrically connecting the gas sensitive material layer 90 with the test layer 60, wherein the semiconductor metal oxide nanoparticles can be copper oxide nanoparticles, nickel oxide nanoparticles, silver oxide nanoparticles, etc.;
11) the transparent glass cover plate 100 and the glass substrate 10 are sealed and combined into a whole by adopting a bonding mode, so that the miniature semiconductor gas-sensitive sensor is formed, wherein a gas chamber is formed by enclosing the transparent glass cover plate 100 and the glass substrate 10, and the gas chamber is communicated with the outside through a gas hole on the transparent glass cover plate 100; the gas sensitive material layer 90 and the test layer 60 are enclosed in the gas chamber.
The micro semiconductor gas sensor manufactured and obtained in the comparative example 1 is adopted to detect gases such as nitrogen dioxide, carbon monoxide, hydrogen sulfide and the like:
placing the miniature semiconductor gas sensor obtained in the comparative example 1 in a test environment, and respectively introducing 100-1000ppm of nitrogen dioxide, carbon monoxide and hydrogen sulfide into the test environment; the sensitivity of the miniature semiconductor gas sensor to nitrogen dioxide is 3.4-10.7, the sensitivity of the miniature semiconductor gas sensor to carbon monoxide is 2.5-8.5, and the sensitivity of the miniature semiconductor gas sensor to hydrogen sulfide is 3.6-10.8.
The embodiment of the utility model provides a pair of miniature semiconductor gas sensor's gaseous sensitive material layer, porous conductive fiber interweaves each other and can forms three-dimensional porous structure, wherein contains multistage hole, and specific surface area is big, can be faster, more absorption target gas, and then can improve gas sensor's sensitivity.
The micro semiconductor gas sensor provided by the embodiment has a simple and reliable processing technology, and the whole sensor has good thermal insulation performance; and the sensor has a firmer structure, and can be used in the environment of being impacted and vibrated.
The embodiment of the utility model provides a miniature semiconductor gas sensor adopts glass substrate and opaque glass apron encapsulation to combine to form, and its coefficient of thermal expansion is controllable, can effectively avoid the coefficient of thermal expansion problem; the micro semiconductor gas sensor provided by the embodiment of the utility model has good insulation performance and can effectively avoid short circuit; additionally, the embodiment of the utility model provides a miniature semiconductor gas sensor, packaging technology is simple, corrosion-resistant, and the bad problem of device that etching process caused can be avoided to easier shaping cantilever structure, improves the device yield.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention, and therefore, the protection scope of the present invention should not be limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (10)
1. A miniature semiconductor gas sensor is characterized by comprising a sensitive test structure and a packaging structure, wherein,
the packaging structure comprises a shading and ventilating cover plate, the shading and ventilating cover plate is combined with the sensitive testing structure in a sealing mode to form a gas chamber, and the gas chamber is communicated with at least one gas hole formed in the shading and ventilating cover plate;
sensitive test structure includes the glass substrate and in proper order stromatolite setting zone of heating, insulating layer and the gas sensitive material layer on the first face of glass substrate, the gas sensitive material layer still with set up test layer electricity on the insulating layer is connected, at least the gas sensitive material layer is set up in the gas chamber, and, the second face of glass substrate still is provided with the back of the body chamber, just the gas sensitive material layer is set up correspondingly the top in back of the body chamber, wherein, first face with the second face sets up back to back.
2. The miniature semiconductor gas sensor of claim 1, wherein: the top of the back cavity is provided with a first area and a second area, the thickness of the glass substrate of the first area is smaller than that of the glass substrate of the second area to form a cantilever structure, and the gas sensitive material layer is correspondingly arranged above the second area of the glass substrate.
3. The miniature semiconductor gas sensor of claim 2, wherein: the thickness of the glass substrate is 100-1000 μm, the thickness of the cantilever structure is 10-100 μm, and the width is 10-100 μm; and/or the shading and ventilating cover plate comprises an opaque glass cover plate, and/or the diameter of the air hole is 10-500 mu m.
4. The miniature semiconductor gas sensor of claim 1, wherein: the thickness of the heating layer is 100-5000 nm; and/or the thickness of the insulating layer is 10-5000 nm.
5. The miniature semiconductor gas sensor of claim 1, wherein: the thickness of the gas sensitive material layer is 100-5000 nm.
6. The miniature semiconductor gas sensor of claim 5, wherein: the thickness of the test layer is 100-5000 nm.
7. The miniature semiconductor gas sensor of claim 1, wherein: the second face of glass substrate still is provided with first pad and second pad, first pad is through setting up first electrically conductive passageway in the glass substrate with the zone of heating electricity is connected, the second pad is through setting up second electrically conductive passageway in the glass substrate with the test layer electricity is connected.
8. The miniature semiconductor gas sensor of claim 7, wherein: the first conductive channel comprises a first through hole penetrating through the glass substrate along the thickness direction and a conductive material filled in the first through hole, and the second conductive channel comprises a second through hole penetrating through the glass substrate along the thickness direction and a conductive material filled in the second through hole.
9. The miniature semiconductor gas sensor of claim 8, wherein: the depth of the first through hole and the second through hole is 50-1000 mu m.
10. The miniature semiconductor gas sensor of claim 1, wherein: the gas sensitive material layer has a three-dimensional porous structure formed by interweaving a plurality of porous conductive fibers.
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