CN211263278U - Miniature integrated gas sensor - Google Patents
Miniature integrated gas sensor Download PDFInfo
- Publication number
- CN211263278U CN211263278U CN201922388339.4U CN201922388339U CN211263278U CN 211263278 U CN211263278 U CN 211263278U CN 201922388339 U CN201922388339 U CN 201922388339U CN 211263278 U CN211263278 U CN 211263278U
- Authority
- CN
- China
- Prior art keywords
- substrate
- gas
- gas sensor
- heating
- gas sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The utility model discloses a miniature integrated gas sensor, which comprises a heating unit and a gas sensitive unit which are arranged oppositely, wherein the gas sensitive unit comprises a testing electrode and a gas sensitive structure, and the gas sensitive structure is directly formed on the testing electrode; the heating unit comprises a heating layer matched with the test electrode, the heating layer faces the gas sensitive structure, and the heating layer is not in direct contact with the gas sensitive structure. The utility model discloses a gas sensor reliability is high, and this gas sensor can satisfy the demand under the higher condition of service environment performance requirement, but also can avoid multilayer film structure to use the problem that produces in the aspect of thermal stress and the coefficient of thermal expansion match that causes under the high temperature.
Description
Technical Field
The utility model relates to a gas sensor, in particular to miniature integrated form gas sensor belongs to electron device technical field.
Background
The gas sensor is widely applied to detecting combustible gas, toxic gas and atmospheric components, and the micro-hotplate type gas sensor based on the MEMS process becomes a research hotspot in the field of the current gas sensor due to the characteristics of low power consumption, small volume and easy integration. Most of MEMS gas sensors adopt platinum as a heating wire, and the suspension of the micro-heating plate is realized by adopting a back bulk silicon processing technology.
The conventional common MEMS gas sensor mainly takes a silicon substrate as a main material, an insulating layer, a heating layer, a testing layer and the like are formed on the silicon substrate, the manufacturing process is relatively complex, the manufacturing process mainly comprises the process technologies of forming micropores through deep silicon etching, depositing the insulating layer/barrier layer/seed layer, preparing pad, photoetching for multiple times and the like, and the conventional silicon substrate MEMS gas sensor also has the defects of low yield, poor performance, easy damage of devices and the like.
In order to overcome the defects of low yield, poor performance, easy damage of devices and the like of the existing silicon-based MEMS gas sensor, the existing commonly used silicon-based MEMS gas sensor mainly combines an MEMS micromachining process, utilizes a film deposition process to prepare the deposition of an insulating layer, a barrier layer and a seed layer, then respectively deposits a metal heating layer and a test layer, and is formed by a wet or dry etching process; and then depositing a sensitive material in the modes of sputtering, spraying, printing and the like, and finishing the integral structure of the MEMS gas sensor after aging treatment. However, such MEMS gas sensors have problems in the following respects: on one hand, a plurality of films are deposited on a silicon-based material, and particularly, the multi-layer composition of a metal film and films such as silicon oxide and silicon nitride is easy to form high stress to cause the failure of a device; secondly, the existing MEMS gas sensor needs to work at a certain temperature, and due to the superposition of multiple materials, the thermal expansion coefficient mismatch among the materials is easily caused, so that the device is damaged; thirdly, after the cavity is etched on the back, the suspension structure can be damaged when sensitive materials are printed.
Disclosure of Invention
A primary object of the present invention is to provide a miniature integrated gas sensor to overcome the disadvantages of the prior art.
In order to achieve the purpose of the invention, the technical scheme adopted by the utility model comprises:
the embodiment of the utility model provides a miniature integrated form gas sensor, it includes relative heating unit and the gas sensing unit that sets up, the gas sensing unit includes test electrode and gas sensing structure, the gas sensing structure directly forms on the test electrode; the heating unit comprises a heating layer matched with the test electrode, the heating layer faces the gas sensitive structure, and the heating layer is not in direct contact with the gas sensitive structure.
Furthermore, the gas sensitive unit further comprises a first substrate, a first surface of the first substrate is provided with a containing groove, and at least the gas sensitive structure is arranged in the containing groove;
the heating unit further includes a second substrate, the heating layer is disposed on a third face of the second substrate,
the first substrate and the second substrate are combined to form a gas chamber, and the gas sensitive structure and the heating layer are encapsulated in the gas chamber; the gas chamber is also in communication with a gas hole disposed in the first substrate.
Further, still be provided with first insulating layer on the first face of first substrate, the test electrode sets up on the first insulating layer, the third face of second substrate still is provided with the second insulating layer, the zone of heating sets up on the second insulating layer.
Furthermore, the second surface of the first substrate is also provided with a first bonding pad which is electrically connected with the test electrode; a fourth surface of the second substrate is also provided with a second bonding pad which is electrically connected with the heating layer; the first surface and the second surface are arranged oppositely, and the third surface and the fourth surface are arranged oppositely.
Furthermore, a first conductive channel is further arranged in the first substrate, one end of the first conductive channel is electrically connected with the test electrode, and the other end of the first conductive channel is electrically connected with the first bonding pad; and a second conductive channel is further arranged in the second substrate, one end of the second conductive channel is electrically connected with the heating layer, and the other end of the second conductive channel is electrically connected with the second bonding pad.
Furthermore, a first through hole penetrating through the first substrate along the thickness direction is formed in the first substrate, and a conductive material is filled in the first through hole to form the first conductive channel; the second substrate is internally provided with a second through hole which penetrates through the second substrate along the thickness direction, and the second through hole is internally filled with a conductive material to form the second conductive channel.
Furthermore, the gas sensitive unit and the heating unit are connected into a whole in a bonding mode.
Further, the first substrate and the second substrate comprise silicon substrates.
Furthermore, the first insulating layer and the second insulating layer are made of silicon oxide.
Furthermore, the thickness of the first insulating layer and the second insulating layer is 100-5000 nm.
Furthermore, the depth of the first through hole and the second through hole is 50-1000 μm.
Further, the diameter of the air hole is 10-500 μm.
Further, the gas sensitive structure has a three-dimensional porous structure formed by interweaving a plurality of porous conductive fibers.
The porous conductive fibers may be selected from those known in the art.
Preferably, the porous conductive fiber comprises a plurality of semiconductor metal oxide nanoparticles which are closely packed, and sulfonated graphene and thiophene oligomers are distributed among at least part of the semiconductor metal oxide nanoparticles.
Furthermore, the diameter of the porous conductive fiber is 0.5-20 μm, the length is more than 10 μm, the porosity is 60-85%, and the aperture of the contained hole is 20-100 nm.
Further, the porous conductive fiber comprises the following components in a mass ratio of 90-95: 0.01-0.5: 2-5, and the sulfonated graphene and the thiophene oligomer can remarkably improve the transmission efficiency of electrons between the semiconductor nanoparticles, and further remarkably improve the sensitivity of the gas sensitive structure.
Further, the particle size of the semiconductor metal oxide nano-particles is 10-100 nm.
Furthermore, the thiophene oligomer contains 2-20 monomer units and has a molecular weight of 800-3000 g/mol.
Further, the test electrode is formed by printing conductive ink containing metal nanoparticles, and the metal elements contained in the metal nanoparticles are the same as those contained in the semiconductor metal oxide nanoparticles forming the gas-sensitive structure.
Further, the metal nanoparticles include metal nanoparticles such as Au, Cu, or Al, but are not limited thereto.
Furthermore, the material of the heating layer comprises any one or the combination of more than two of Pt, Au, Ag and Cu.
Further, the thickness of the heating layer is 100-5000 nm.
The embodiment of the utility model also provides a method for manufacturing the miniature integrated gas sensor, which comprises the following steps,
manufacturing a gas sensitive unit:
providing a first substrate, and processing and forming a containing groove in a designated area of a first surface of the first substrate;
forming a first insulating layer on the first surface of the first substrate,
manufacturing and forming a test electrode on the first insulating layer in the accommodating groove, and manufacturing and forming a gas sensitive structure on the test electrode;
processing and forming an air hole and a first through hole which continuously penetrate through the first substrate and the first insulating layer along the thickness direction in the first substrate, and filling a conductive material in the first through hole to form a first conductive channel, wherein the air hole is communicated with the accommodating groove;
manufacturing a layer of first metal layer on the first insulating layer, and electrically connecting the first metal layer with the test electrode and the first conductive channel respectively;
manufacturing a heating unit:
providing a second substrate, manufacturing and forming a second insulating layer on a third surface of the second substrate, and manufacturing a heating layer on the second insulating layer;
processing and forming a second through hole which continuously penetrates through the second substrate and the second insulating layer along the thickness direction in the second substrate, and filling a conductive material in the second through hole to form a second conductive channel;
a second metal layer is formed on the second insulating layer and is electrically connected with the second conductive channel and the heating layer respectively;
adopt the mode of bonding will gaseous sensitive unit with heating unit links into an integrated entity, and form a gas cavity between heating unit and the gaseous sensitive unit, gaseous sensitive structure and zone of heating are encapsulated in the gas cavity, the zone of heating orientation gaseous sensitive structure, just the zone of heating with gaseous sensitive structure does not have direct contact.
Specifically, the method specifically comprises the following steps: a conductive ink containing metal nanoparticles, which may be metal nanoparticles of Au, Cu, or Al, is printed onto the second insulating layer to form a test electrode having a thickness of 10-1000 μm.
Preferably, the method specifically comprises the following steps: dissolving thiophene oligomer in an organic solvent to form a dispersion liquid, sequentially adding sulfonated graphene and semiconductor metal oxide nanoparticles into the dispersion liquid, uniformly dispersing to form printing ink, printing the printing ink on a second insulating layer and/or a test electrode, drying and aging to form a gas sensitive structure, wherein the gas sensitive structure is electrically connected with the test electrode; wherein, the printing ink is dried and aged to form a plurality of porous conductive fibers which are interwoven with each other; the mass ratio of the semiconductor metal oxide nanoparticles to the sulfonated graphene to the thiophene oligomer in the printing ink is 90-95: 0.01-0.5: 2-5, the semiconductor metal oxide nano-particles can be copper oxide nano-particles, cuprous oxide nano-particles, aluminum oxide nano-particles and the like, the particle size of the semiconductor metal oxide nano-particles is 10-100nm, the thiophene oligomer contains 2-20 monomer units, and the molecular weight is 800-3000 g/mol.
Specifically, the metal element contained in the metal nanoparticles used to form the test electrodes is the same as the metal element contained in the semiconductor metal oxide nanoparticles used to form the gas-sensitive structure.
Further, the method further comprises the following steps: manufacturing a first bonding pad on the second surface of the first substrate, wherein the first bonding pad is electrically connected with the first conductive channel, and manufacturing a second bonding pad on the fourth surface of the second substrate, and the second bonding pad is electrically connected with the second conductive channel; the first surface and the second surface are arranged oppositely, and the third surface and the fourth surface are arranged oppositely.
Compared with the prior art, the utility model provides a miniature integrated gas sensor and a manufacturing method thereof, which respectively manufacture and form two parts of a heating unit and a gas sensitive unit on a silicon substrate, and then form an integrated MEMS gas sensor by combining the heating unit and the gas sensitive unit in a bonding mode;
in the gas sensitive structure of the micro integrated gas sensor provided by the embodiment of the present invention, the porous conductive fibers are interlaced with each other to form a three-dimensional porous structure, which contains multi-level holes and has a large specific surface area, so that the target gas can be absorbed more quickly and more, and the sensitivity of the gas sensor can be improved;
in addition, the utility model provides a manufacturing method of the miniature integrated gas sensor has higher reliability, and the miniature integrated gas sensor can meet the requirements under the condition of higher performance requirements of the use environment; but also avoids the problems of thermal stress and thermal expansion coefficient matching caused by the use of the multilayer film structure at high temperature.
Drawings
Fig. 1 is a schematic diagram of a micro integrated gas sensor according to an exemplary embodiment of the present invention;
fig. 2 is a schematic diagram illustrating a manufacturing process of a gas sensing unit of a micro integrated gas sensor according to an exemplary embodiment of the present invention;
fig. 3 is a schematic diagram of a manufacturing process of a heating unit of a micro integrated gas sensor according to an exemplary embodiment of the present invention.
Detailed Description
In view of the deficiencies in the prior art, the inventor of the present invention has made extensive studies and practices to provide the technical solution of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
The utility model provides a miniature integrated form gas sensor and manufacturing method thereof makes respectively and forms heating unit, gaseous sensitive unit two parts on silicon-based substrate, later through the mode of bonding, forms and combines heating unit, gaseous sensitive unit to form integrated form MEMS gas sensor.
The embodiment of the utility model provides a miniature integrated form gas sensor, it includes: the gas sensitive unit comprises a test electrode and a gas sensitive structure, and the gas sensitive structure is electrically connected with the test electrode; the heating unit comprises a heating layer matched with the test electrode, the heating layer faces the gas sensitive structure, and the heating layer is not in direct contact with the gas sensitive structure.
Specifically, referring to fig. 1, an exemplary embodiment of the present invention provides a micro integrated gas sensor, which includes a gas sensing unit 100 and a heating unit 200.
Specifically, the gas sensing unit 100 includes a first substrate 110, a first insulating layer 120 disposed on a first surface of the first substrate 110, a test electrode 130 disposed on the first insulating layer 120, and a gas sensing structure 140, wherein the gas sensing structure 140 is directly formed on the test electrode 130 and electrically coupled to the test electrode 130.
A receiving groove is further disposed on the first surface of the first substrate 110, and the test electrode 130 and the gas sensitive structure 140 are disposed in the receiving groove, and the receiving groove is further communicated with the air hole 111 on the first substrate 110.
Specifically, the second surface of the first substrate 110 is further provided with a first pad 170, and the first pad 170 is electrically connected to the test electrode 130 through a first conductive via 160 disposed inside the first substrate and a first metal layer 150 disposed on the first insulating layer; the first conductive via 160 mainly comprises a first through hole penetrating through the first substrate 110 along the thickness direction and a conductive material filled in the first through hole, one end of the first conductive via 160 is electrically connected to the test electrode 130 through a first metal layer 150, the first metal layer 150 may be a metal wire, etc., wherein the first surface and the second surface of the first substrate are disposed opposite to each other.
Specifically, the heating unit 200 includes a second substrate 210, a second insulating layer 220 disposed on a third surface of the second substrate, and a heating layer 240 disposed on the second insulating layer, wherein a second pad 270 is further disposed on a fourth surface of the second substrate 210, the second pad 270 is electrically connected to the heating layer 240 through a second conductive path 260 disposed inside the second substrate 210 and a second metal layer 230 disposed on the second insulating layer, one end of the second conductive path 260 is electrically connected to the heating layer through the second metal layer, the second conductive path 260 is mainly composed of a second through hole penetrating the second substrate 220 in a thickness direction and a conductive material filled in the second through hole, the second metal layer may be a metal wire, and the third surface and the fourth surface of the second substrate are disposed opposite to each other.
Specifically, the surface of the gas sensitive unit 100 is combined with the heating unit 200 to form a gas chamber enclosed between the gas sensitive unit and the heating unit, the test electrode 130, the gas sensitive structure 140 and the heating layer 240 are encapsulated in the gas chamber, the gas sensitive structure 140 and the heating layer 240 are not in direct contact, and the gas chamber is communicated with the outside through a gas hole formed in the first substrate.
Example 1
A method for manufacturing a micro integrated gas sensor may include a step of manufacturing a heating unit, a step of manufacturing a gas sensing unit, and a step of combining the heating unit and the gas sensing unit.
Specifically, referring to fig. 2, a method for manufacturing a micro integrated gas sensor includes:
1) providing a first substrate, and processing and forming a containing groove on a first surface of the first substrate by adopting a photoetching and etching mode, wherein the first substrate can be a monocrystalline silicon substrate;
2) depositing 100-5000nm silicon oxide on the first surface of the first substrate as a first insulating layer;
3) printing a conductive ink containing metal nanoparticles, which may be metal nanoparticles of Au, Cu, or Al, onto the second insulating layer to form a test electrode;
4) dissolving thiophene oligomer in an organic solvent to form a dispersion liquid, sequentially adding sulfonated graphene and semiconductor metal oxide nanoparticles into the dispersion liquid, uniformly dispersing to form printing ink, printing the printing ink on a second insulating layer and/or a test electrode, drying and aging to form a gas sensitive structure, wherein the gas sensitive structure is electrically connected with the test electrode; wherein, the printing ink is dried and aged to form a plurality of porous conductive fibers which are interwoven with each other; the mass ratio of the semiconductor metal oxide nanoparticles to the sulfonated graphene to the thiophene oligomer in the printing ink is 90-95: 0.01-0.5: 2-5, the semiconductor metal oxide nanoparticles can be copper oxide nanoparticles, cuprous oxide nanoparticles, aluminum oxide nanoparticles and the like, the particle size of the semiconductor metal oxide nanoparticles is 10-100nm, the thiophene oligomer contains 2-20 monomer units, and the molecular weight is 800-3000g/mol, wherein the metal elements contained in the metal nanoparticles for forming the test electrode are the same as the metal elements contained in the semiconductor metal oxide nanoparticles for forming the gas sensitive structure;
5) processing and forming a gas hole and a first through hole which penetrate through the first substrate and the first insulating layer along the thickness direction in the first substrate by adopting a photoetching and etching mode, wherein the diameter of the gas hole is 10-500 mu m, the depth of the first through hole is 50-1000 mu m, and filling a metal material in the through hole by adopting an electroplating mode to form a first conductive channel; and then manufacturing a first metal layer, wherein the first metal layer is respectively electrically connected with the first conductive channel and the test electrode, and the first metal layer can be a metal wire.
6) Providing a second substrate, depositing 100-5000nm silicon oxide and the like on a third surface of the second substrate in a deposition mode to form a second insulating layer, and then manufacturing a heating layer on the second insulating layer in a photoetching and deposition mode, wherein the second substrate can be a monocrystalline silicon substrate, and the material of the second insulating layer can be silicon oxide and the like; the heating layer can be a heating electrode, the material of the heating layer can be any one or more than two metals such as Pt, Au, Ag, Cu and the like, and the thickness of the heating layer is 100-5000 nm;
7) processing and forming a second through hole penetrating through the second substrate and the second insulating layer along the thickness direction in the second substrate by adopting a photoetching and etching mode, wherein the depth of the second through hole is 50-1000 mu m;
8) filling a metal material into the second through hole in an electroplating mode to form a second conductive channel; then, a second metal layer is manufactured, the second metal layer is respectively and electrically connected with the second conductive channel and the heating layer, the second metal layer can be a metal wire and the like, and the specific material of the second metal layer can be selected according to the requirement;
9) the gas sensitive unit and the heating unit are combined into a whole by adopting bonding processes such as eutectic bonding or anodic bonding, and a gas chamber is formed between the gas sensitive unit and the heating unit, wherein the testing electrode, the gas sensitive structure and the heating layer are arranged in the gas chamber, the heating layer faces the gas sensitive structure, and the heating layer and the gas sensitive structure are not in direct contact;
10) the gas sensor is subjected to surface treatment by processes of thinning, polishing and the like, then a first bonding pad is formed on the second surface of the first substrate by photoetching and etching methods, a second bonding pad is formed on the fourth surface of the second substrate, the first bonding pad is electrically connected with the first conductive channel, the second bonding pad is electrically connected with the second conductive channel, the first surface and the second surface are arranged in a back-to-back mode, and the third surface and the fourth surface are arranged in a back-to-back mode.
The micro integrated gas sensor manufactured in example 1 was used to detect gases such as nitrogen dioxide, carbon monoxide, and hydrogen sulfide:
placing the micro integrated gas sensor obtained in the embodiment 1 in a test environment, and respectively introducing 100-1000ppm of nitrogen dioxide, carbon monoxide and hydrogen sulfide into the test environment; the sensitivity of the micro integrated gas sensor to nitrogen dioxide is 4.7-26.9, wherein when the input amount of the nitrogen dioxide is 500ppm, the sensitivity of the gas sensor to the nitrogen dioxide reaches 26.9, the sensitivity of the micro integrated gas sensor to carbon monoxide is 7.1-36.4, wherein when the input amount of the carbon monoxide is 550ppm, the sensitivity of the micro integrated gas sensor to the carbon monoxide reaches 36.4, the sensitivity of the micro integrated gas sensor to hydrogen sulfide reaches 7.8-47.6, and when the input amount of the hydrogen sulfide reaches 900ppm, the sensitivity of the micro integrated gas sensor to the hydrogen sulfide reaches 47.6.
Comparative example 1
The manufacturing method of the gas sensor can comprise the following steps:
1) providing a first substrate, and processing and forming a containing groove on a first surface of the first substrate by adopting a photoetching and etching mode, wherein the first substrate can be a monocrystalline silicon substrate;
2) depositing 100-5000nm silicon oxide on the first surface of the first substrate as a first insulating layer;
3) printing a conductive ink containing metal nanoparticles, which may be metal nanoparticles of Au, Cu, or Al, onto the second insulating layer to form a test electrode;
4) directly dissolving semiconductor metal oxide nanoparticles into an organic solvent (such as acetonitrile, acetone and the like) to be uniformly dispersed to form printing ink, and then printing the printing ink on a second insulating layer and/or a test electrode to form a gas sensitive structure; wherein the semiconductor metal oxide nanoparticles can be copper oxide nanoparticles, cuprous oxide nanoparticles, aluminum oxide nanoparticles, etc., and the particle size of the semiconductor metal oxide nanoparticles is 10-100 nm;
5) processing and forming a gas hole and a first through hole which penetrate through the first substrate and the first insulating layer along the thickness direction in the first substrate by adopting a photoetching and etching mode, wherein the diameter of the gas hole is 10-500 mu m, the depth of the first through hole is 50-1000 mu m, and filling a metal material in the through hole by adopting an electroplating mode to form a first conductive channel; and then manufacturing a first metal layer, wherein the first metal layer is respectively electrically connected with the first conductive channel and the test electrode, and the first metal layer can be a metal wire.
6) Providing a second substrate, depositing 100-5000nm silicon oxide and the like on a third surface of the second substrate in a deposition mode to form a second insulating layer, and then manufacturing a heating layer on the second insulating layer in a photoetching and deposition mode, wherein the second substrate can be a monocrystalline silicon substrate, and the material of the second insulating layer can be silicon oxide and the like; the heating layer can be a heating electrode, the material of the heating layer can be any one or more than two metals such as Pt, Au, Ag, Cu and the like, and the thickness of the heating layer is 100-5000 nm;
7) processing and forming a second through hole penetrating through the second substrate and the second insulating layer along the thickness direction in the second substrate by adopting a photoetching and etching mode, wherein the depth of the second through hole is 50-1000 mu m;
8) filling a metal material into the second through hole in an electroplating mode to form a second conductive channel; then, a second metal layer is manufactured, the second metal layer is respectively and electrically connected with the second conductive channel and the heating layer, the second metal layer can be a metal wire and the like, and the specific material of the second metal layer can be selected according to the requirement;
9) the gas sensitive unit and the heating unit are combined into a whole by adopting bonding processes such as eutectic bonding or anodic bonding, and a gas chamber is formed between the gas sensitive unit and the heating unit, wherein the testing electrode, the gas sensitive structure and the heating layer are arranged in the gas chamber, the heating layer faces the gas sensitive structure, and the heating layer and the gas sensitive structure are not in direct contact;
10) the gas sensor is subjected to surface treatment by processes of thinning, polishing and the like, then a first bonding pad is formed on the second surface of the first substrate by photoetching and etching methods, a second bonding pad is formed on the fourth surface of the second substrate, the first bonding pad is electrically connected with the first conductive channel, the second bonding pad is electrically connected with the second conductive channel, the first surface and the second surface are arranged in a back-to-back mode, and the third surface and the fourth surface are arranged in a back-to-back mode.
The gas sensor obtained in comparative example 1 was used to detect gases such as nitrogen dioxide, carbon monoxide, and hydrogen sulfide:
placing the gas sensor obtained in the comparative example 1 in a test environment, and respectively introducing 100-1000ppm of nitrogen dioxide, carbon monoxide and hydrogen sulfide into the test environment; the sensitivity of the gas sensor to nitrogen dioxide is 3.5-11.6, the sensitivity to carbon monoxide is 3.3-15.1, and the sensitivity to hydrogen sulfide is 7.1-21.2.
The embodiment of the utility model provides an among miniature integrated form gas sensor's the gas sensitive structure, porous conductive fiber interweaves each other and can forms three-dimensional porous structure, wherein contains multistage hole, and specific surface is big, can be faster, more absorption target gas, and then can improve gas sensor's sensitivity.
The utility model provides a miniature integrated form gas sensor simple process, good performance, easy integration especially are applicable in application fields such as consumer electronics, white household electrical appliances.
The utility model provides a manufacturing method of a micro integrated gas sensor, which has higher reliability and can meet the requirements under the condition of higher performance requirements of the use environment; but also avoids the problems of thermal stress and thermal expansion coefficient matching caused by the use of the multilayer film structure at high temperature.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention, and therefore, the protection scope of the present invention should not be limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (10)
1. A miniature integrated gas sensor is characterized by comprising a heating unit and a gas sensitive unit which are oppositely arranged, wherein the gas sensitive unit comprises a test electrode and a gas sensitive structure, and the gas sensitive structure is directly formed on the test electrode; the heating unit comprises a heating layer matched with the test electrode, the heating layer faces the gas sensitive structure, and the heating layer is not in direct contact with the gas sensitive structure.
2. A miniature integrated gas sensor according to claim 1, wherein: the gas sensitive unit further comprises a first substrate, wherein a containing groove is formed in the first surface of the first substrate, and at least the gas sensitive structure is arranged in the containing groove;
the heating unit further includes a second substrate, the heating layer is disposed on a third face of the second substrate,
the first substrate and the second substrate are combined to form a gas chamber, the gas sensitive structure and the heating layer are packaged in the gas chamber, and the gas chamber is further communicated with a gas hole formed in the first substrate.
3. A miniature integrated gas sensor according to claim 2, comprising: still be provided with first insulating layer on the first face of first substrate, the test electrode sets up on the first insulating layer, the third face of second substrate still is provided with the second insulating layer, the zone of heating sets up on the second insulating layer.
4. A miniature integrated gas sensor according to claim 2, wherein: the second surface of the first substrate is also provided with a first bonding pad which is electrically connected with the test electrode; a fourth surface of the second substrate is also provided with a second bonding pad which is electrically connected with the heating layer; the first surface and the second surface are arranged oppositely, and the third surface and the fourth surface are arranged oppositely.
5. The miniature integrated gas sensor of claim 4, wherein: a first conductive channel is further arranged in the first substrate, one end of the first conductive channel is electrically connected with the test electrode, and the other end of the first conductive channel is electrically connected with the first bonding pad; and a second conductive channel is further arranged in the second substrate, one end of the second conductive channel is electrically connected with the heating layer, and the other end of the second conductive channel is electrically connected with the second bonding pad.
6. A miniature integrated gas sensor according to claim 5, wherein: a first through hole penetrating through the first substrate along the thickness direction is formed in the first substrate, and a conductive material is filled in the first through hole to form the first conductive channel; the second substrate is internally provided with a second through hole which penetrates through the second substrate along the thickness direction, and the second through hole is internally filled with a conductive material to form the second conductive channel.
7. A miniature integrated gas sensor according to claim 2, wherein: the gas sensitive unit and the heating unit are connected into a whole in a bonding mode.
8. A miniature integrated gas sensor according to claim 2, wherein: the first substrate and the second substrate comprise silicon substrates; and/or the diameter of the air holes is 10-500 μm; and/or the gas sensitive structure has a three-dimensional porous structure formed by interweaving a plurality of porous conductive fibers.
9. A miniature integrated gas sensor according to claim 3, wherein: the thicknesses of the first insulating layer and the second insulating layer are 100-5000 nm; and/or the thickness of the heating layer is 100-5000 nm.
10. A miniature integrated gas sensor according to claim 6, wherein: the depth of the first through hole and the second through hole is 50-1000 mu m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922388339.4U CN211263278U (en) | 2019-12-27 | 2019-12-27 | Miniature integrated gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922388339.4U CN211263278U (en) | 2019-12-27 | 2019-12-27 | Miniature integrated gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211263278U true CN211263278U (en) | 2020-08-14 |
Family
ID=71954024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922388339.4U Active CN211263278U (en) | 2019-12-27 | 2019-12-27 | Miniature integrated gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211263278U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113426498A (en) * | 2021-03-17 | 2021-09-24 | 江苏甫瑞微纳传感科技有限公司 | Composite micro-fluidic chip and preparation method thereof |
-
2019
- 2019-12-27 CN CN201922388339.4U patent/CN211263278U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113426498A (en) * | 2021-03-17 | 2021-09-24 | 江苏甫瑞微纳传感科技有限公司 | Composite micro-fluidic chip and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111044576B (en) | MEMS (micro electro mechanical System) integrated gas sensor and manufacturing method thereof | |
| Zang et al. | Laser‐induced molybdenum carbide–graphene composites for 3D foldable paper electronics | |
| CN111044577B (en) | MEMS semiconductor type gas sensor based on glass substrate and manufacturing method thereof | |
| CN102798403B (en) | MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure and integrated manufacturing method thereof | |
| CN103630582B (en) | A kind of MEMS humidity sensor and preparation method | |
| KR100545928B1 (en) | Capacitive vacuum measuring cell | |
| EP3028993A1 (en) | A deposit and electrical devices comprising the same | |
| KR20170135750A (en) | Carbon nanotube-based thermal interface materials and methods of making and using thereof | |
| US20130141840A1 (en) | On-board power supply | |
| KR20170081575A (en) | Conductors and electronic devices including the same | |
| Lodermeyer et al. | Facile and quick preparation of carbon nanohorn-based counter electrodes for efficient dye-sensitized solar cells | |
| CN211263278U (en) | Miniature integrated gas sensor | |
| Van Toan et al. | Liquid and solid states on-chip micro-supercapacitors using silicon nanowire-graphene nanowall-pani electrode based on microfabrication technology | |
| CN108548852A (en) | A kind of graphene-based film-type hydrogen gas sensor and preparation method thereof | |
| CN109243989B (en) | Silicon-silicon low-temperature bonding method based on graphene slurry | |
| US9685278B2 (en) | Energy storage devices having enhanced specific energy and associated methods | |
| US10249444B2 (en) | Method of fabricating an electrochemical double-layer capacitor | |
| Kumar et al. | Optical and electrical characterization of plasma polymerized pyrrole films | |
| CN102313625B (en) | Pirani vacuum gauge of carbon nanotube and vacuum degree detection method thereof | |
| CN110579516A (en) | nitrogen dioxide gas detection device, manufacturing method thereof and electronic product | |
| Oh et al. | Foldable RF Energy Harvesting System Based on Vertically Layered Metal Electrodes within a Single Sheet of Paper | |
| CN211263279U (en) | Flexible gas sensing device | |
| CN111103331B (en) | Full-flexible heatable gas sensor and manufacturing method thereof | |
| CN113433191B (en) | Annular heating type gas sensor and preparation method thereof | |
| CN217883833U (en) | Sensor, microphone and electronic equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |