CN111969112B - Self-powered airflow sensor and preparation method thereof - Google Patents

Self-powered airflow sensor and preparation method thereof Download PDF

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CN111969112B
CN111969112B CN202010751211.4A CN202010751211A CN111969112B CN 111969112 B CN111969112 B CN 111969112B CN 202010751211 A CN202010751211 A CN 202010751211A CN 111969112 B CN111969112 B CN 111969112B
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self
layer
back electrode
paste
powered
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CN111969112A (en
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孟鸿
张赫
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Peking University Shenzhen Graduate School
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Peking University Shenzhen Graduate School
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K30/81—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • G—PHYSICS
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    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P5/00—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

The invention provides a self-powered current sensor based on a photovoltaic device structure and a preparation method thereof, belongs to the technical field of airflow sensors, and can be used for detecting the gas flow velocity in the fields of industry, agriculture, meteorology and the like. The invention discloses a photovoltaic device-based airflow sensor structure, which comprises: transparent electrodes, hole transport materials, light absorbing materials, electron transport materials and loose porous back electrode materials. The preparation method comprises the following steps: the hole transport material, the light absorption material and the electron transport material are prepared by evaporation, atomic layer deposition or spin coating, and the loose porous back electrode is prepared by a screen printing method. The airflow sensor based on the photovoltaic device structure has the advantages of self power supply, high sensitivity, solution-soluble processing, miniaturization and the like.

Description

Self-powered airflow sensor and preparation method thereof
Technical Field
The invention belongs to the field of airflow sensors, and relates to a self-powered airflow sensor based on a photovoltaic device structure and a preparation method thereof.
Technical Field
The airflow sensor has important application in the fields of industry, agriculture, meteorology and the like. In recent years, with the development of micro-electro-mechanical systems (MEMS), gas flow sensors based on MEMS technology are receiving more and more attention, but these sensors still have the problems of high power consumption and low sensitivity, which severely limits the further development of the sensors. Especially high power consumption, since the device size based on the MEMS process is very small (feature size 100-1000 μm), a lot of manpower and material resources are consumed for battery replacement or charging. Therefore, if a new type of airflow sensor can be developed, the sensor can be not only self-powered, but also can supply power for other devices in a MEMS system, which will have an important driving role in developing the airflow sensor of the MEMS technology.
Disclosure of Invention
In order to solve the above problems, the present invention provides a self-powered airflow sensor and a method for manufacturing the same.
The technical scheme of the invention is realized by the following modes:
the invention provides a self-powered airflow sensor which comprises a transparent electrode, a hole transport layer, a light absorption layer, an electron transport layer and a back electrode which are sequentially arranged, wherein the back electrode has a micro-morphology of a loose porous structure, and the transparent electrode is connected with the back electrode through a lead.
In one embodiment of the invention, the back electrode is a conductive layer having a porous structure.
In one embodiment of the present invention, the back electrode is formed after the coated conductive paste is dried.
In one embodiment of the present invention, the conductive paste is at least one of silver paste, carbon paste, gold paste, and platinum paste.
The invention also provides a preparation method of the self-powered airflow sensor, which comprises the following steps:
s1, preparing a hole transport layer, a light absorption layer and an electron transport layer on a transparent electrode layer by layer;
s2, coating the conductive paste on the electron transmission layer through a screen printing process, and then annealing the electrode to finish the preparation of the loose porous back electrode;
and S3, respectively connecting a conducting wire for collecting current to the transparent electrode and the loose porous back electrode to obtain the airflow sensor.
In one embodiment of the present invention, the hole transport layer is prepared by an evaporation method, an atomic layer deposition method, or a spin coating method.
In one embodiment of the present invention, the light absorption layer is prepared by an evaporation method, an atomic layer deposition method, or a spin coating method.
In one embodiment of the invention, the electron transport layer is prepared by an evaporation method, an atomic layer deposition method or a spin coating method.
In an embodiment of the invention, in the step S2, the conductive paste is at least one of silver paste, carbon paste, gold paste, and platinum paste.
In an embodiment of the present invention, in the step S3, conducting wires for collecting current are respectively adhered to the transparent electrode and the porous back electrode by using conductive adhesive
The invention has the following beneficial effects:
1. the invention develops the airflow sensor based on the photovoltaic device structure, and the sensor has the advantages of no need of external power supply and high sensitivity;
2. the sensor has the characteristics of easy integration, solution processing, miniaturization and flexibility, and has great and unique advantages in the field of preparing airflow sensors based on MEMS technology.
Drawings
Figure 1 is a schematic diagram of a self-powered sensor based on a photovoltaic device structure as contemplated in the present invention;
FIG. 2 is a sectional electron microscope image of the sensor in example 1;
FIG. 3 is a graph showing the change of the current between the two electrodes of the sensor with time when the sensor of example 1 is exposed to air flows of different flow rates and horizontal flows;
FIG. 4 is a sectional electron micrograph of a sensor according to example 2;
FIG. 5 is a graph showing the change of the current between the electrodes of the sensor with time when the sensor of example 2 is exposed to air flows of different flow rates and horizontal flows.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the disclosed embodiments are merely exemplary of the invention, and are not intended to be exhaustive or exhaustive. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The photovoltaic device can convert solar energy into electric energy, does not need an additional power supply to supply power during working, and has unique advantages in the aspect of constructing the airflow sensor based on the MEMS process. The invention selects a photovoltaic device with a structure comprising a transparent electrode, a hole transport layer, a light absorption layer, an electron transport layer and a back electrode for the first time, and constructs the back electrode with a loose and porous appearance by optimizing the preparation process of the back electrode. The self-powered airflow sensor based on the photovoltaic device structure is prepared by utilizing the characteristic that the micro-morphology of the back electrode is changed when the back electrode is under the action of air pressure, so that the current of an external circuit is changed.
The invention aims to provide a self-powered current sensor based on a photovoltaic device structure and a preparation method thereof, wherein the sensor has the characteristics of no need of external power supply, miniaturization and high sensitivity, can be integrated into an MEMS system, and can be used for detecting the gas flow velocity in the fields of industry, agriculture, meteorology and the like.
In order to realize the purpose of the invention, the following technical scheme is adopted:
1. cleaning the transparent electrode, and preparing a layer of hole transport material by an evaporation method, an atomic layer deposition method or a spin coating method;
2. preparing a layer of light absorption material above the hole transmission material by an evaporation method, an atomic layer deposition method or a spin coating method;
3. preparing a layer of electron transmission material above the light absorption material by an evaporation method, an atomic layer deposition method or a spin coating method;
4. coating the conductive paste above the electron transmission layer by a screen printing process, and then annealing the device to completely volatilize the organic solvent in the conductive paste to complete the preparation of the loose porous back electrode;
5. and respectively adhering a conducting wire on the transparent electrode and the loose porous electrode by using a conductive adhesive, and collecting the current at two ends of the device, thereby completing the preparation of the airflow sensor.
Example 1
1. And (3) placing the ITO glass in ethanol, acetone and isopropanol respectively, ultrasonically cleaning for 15min, and then drying by using a nitrogen gun. PSS is coated on ITO in a spinning mode at the speed of 3000r/min for 30s, and then the ITO is heated on a hot bench for 10min at the temperature of 120 ℃, so that the preparation of a hole transport layer is completed;
2. will be provided withMaI and PbI 2 Dissolved in DMF: DMSO (volume ratio 4: 1), and stirred at 70 ℃ for 30min to obtain 1.4mol/L perovskite MaPbI 3 Solution, the perovskite solution is coated on the hole transport layer in a spinning mode, the process is that 1000r/min is firstly coated with 5s in a spinning mode, then 4000r/min is coated with 30s in a spinning mode, 350 mu L of methylbenzene is added as an anti-solvent in 7s of the second stage, then the wafer is annealed, annealing is carried out for 1min at the temperature of 60 ℃, and then annealing is carried out for 5min at the temperature of 80 ℃;
3. dissolving the electron transport material PCBM in chlorobenzene to prepare a 20mg/mL solution, spin-coating the PCBM solution on the perovskite layer, and spin-coating at 600r/min for 2min. Then placing the wafer on a 45 ℃ hot bench for annealing for 30min;
4. coating silver paste on the PCBM layer by a screen printing process, and naturally drying to obtain a metal back electrode with a loose porous structure;
5. a gold wire is respectively adhered to the ITO electrode and the loose porous carbon electrode by conductive silver paste for conducting current between the two electrodes. Thus, the self-powered current sensor is prepared.
In the preparation process of the device, the hole transport layer is prepared in the air, and the perovskite layer, the electron transport layer and the metal back electrode are arranged in N 2 And preparing the product in a glove box as protective gas.
Fig. 2 is a cross-sectional electron microscope image of the sensor constructed in example 1, and it can be seen from the image that the carbon electrode prepared by the screen printing process is in a loose and porous shape, the thickness of the electrode is about 10 μm, and the thickness of the electrode is much larger than the sum of the thicknesses of the electron transport layer, the light absorption layer and the hole transport layer prepared by the spin coating method below the electrode.
FIG. 3 shows the time-dependent change of the current between the two electrodes when the sensor constructed in example 1 is exposed to horizontal gas flows having different flow rates. It can be seen from the figure that when the device is exposed to a horizontal gas flow, the current between the two electrodes becomes smaller, the magnitude of the current decrease increases as the gas flow rate increases, and after the gas flow is cut off, the current can return to the initial position, indicating that the sensor has excellent response-recovery characteristics. The sensor has a high response to airflow, 25 muA and 75 muA for 2m/s and 18m/s airflow, respectively.
Example 2
The structure and the preparation method of the airflow sensor of the embodiment are the same as those of the embodiment 1, except that the back electrode is made of silver paste instead of carbon paste, and the airflow sensor is still prepared by a screen printing process, and the obtained sensor is marked as ITO/PEDOT: PSS/PVK/PCBM/Ag.
Fig. 4 is a cross-sectional electron microscope image of the sensor prepared in example 2, and it can be seen that the silver electrode prepared by the screen printing process has a loose and porous structure, the back electrode has a thickness of about 10 μm, and the thickness is much greater than the sum of the thicknesses of the electron transport layer, the light absorption layer and the hole transport layer prepared by the spin coating method below.
FIG. 5 is a graph of the current between the two electrodes as a function of time for the ITO/PEDOT: PSS/PVK/PCBM/Ag sensor prepared in example 2 exposed to different gas flow rates. As can be seen from the figure, when the sensor is brought into contact with the airflow, the current between the two electrodes is reduced, and when the current is cut off, the current can be restored to the initial value, indicating that the sensor has excellent response-recovery characteristics to the airflow. When silver is used as the back electrode, the response values of the sensor to 5m/s and 18m/s air flows are 39 muA and 44 muA respectively.
Although only a limited variety of conductive pastes are exemplified as the back electrode material in the embodiments of the present invention, a series of conductive pastes such as gold paste, platinum paste, etc. may be used as the back electrode material in the present invention, and these conductive pastes have similar and stable properties, and the stable conductive pastes may form a stable porous back electrode, which is within the scope of the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Moreover, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without being mutually inconsistent.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (9)

1. A self-powered airflow sensor is characterized by comprising a transparent electrode, a hole transport layer, a light absorption layer, an electron transport layer and a back electrode which are sequentially arranged, wherein the back electrode is a conductive metal layer and has a micro-morphology of a loose porous structure, and the transparent electrode is connected with the back electrode through a lead.
2. The self-powered airflow sensor of claim 1, wherein the back electrode is formed from a dried applied conductive paste.
3. The self-powered airflow sensor of claim 2 wherein the conductive paste is at least one of a silver paste, a gold paste, and a platinum paste.
4. A method of making a self-powered airflow sensor, comprising the steps of:
s1, preparing a hole transport layer, a light absorption layer and an electron transport layer on a transparent electrode layer by layer;
s2, coating the conductive slurry on the electron transmission layer through a screen printing process, and then annealing the electrode to complete the preparation of the loose porous back electrode;
and S3, respectively connecting conducting wires for collecting current to the transparent electrode and the loose porous back electrode to obtain the airflow sensor.
5. The method of manufacturing a self-powered electrical current sensor according to claim 4, wherein the hole transport layer is manufactured by evaporation, atomic layer deposition, or spin coating.
6. The method of claim 4, wherein the light absorbing layer is formed by evaporation, atomic layer deposition, or spin coating.
7. The method of manufacturing a self-powered electrical current sensor according to claim 4, wherein the electron transport layer is manufactured by evaporation, atomic layer deposition, or spin coating.
8. The method according to claim 4, wherein in step S2, the conductive paste is at least one of silver paste, gold paste, and platinum paste.
9. The method for preparing a self-powered current sensor according to claim 4, wherein in step S3, conducting wires for collecting current are respectively adhered to the transparent electrode and the porous back electrode by using conductive adhesive.
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DE19708770C1 (en) * 1997-03-04 1998-08-27 Siemens Ag Gas sensor for detecting methane
JP2005132644A (en) * 2003-10-28 2005-05-26 Tdk Corp Functional porous film and method of manufacturing the same, and sensor
US8316717B2 (en) * 2010-06-29 2012-11-27 Rogue Valley Microdevices, Inc. Wireless self-powered monolithic integrated capacitive sensor and method of manufacture
US20180358571A1 (en) * 2015-06-25 2018-12-13 Global Frontier Center For Multiscale Energy Syste Perovskite-based solar cell using graphene as conductive transparent electrode
CN107068866A (en) * 2016-12-27 2017-08-18 济南大学 A kind of translucent perovskite solar cell and its package technique

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