CN207066640U - A kind of MEMS pressure sensor - Google Patents
A kind of MEMS pressure sensor Download PDFInfo
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- CN207066640U CN207066640U CN201720902564.3U CN201720902564U CN207066640U CN 207066640 U CN207066640 U CN 207066640U CN 201720902564 U CN201720902564 U CN 201720902564U CN 207066640 U CN207066640 U CN 207066640U
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- Prior art keywords
- pressure sensor
- sensitive membrane
- mems pressure
- filling part
- sensor according
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- 239000012528 membrane Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000011435 rock Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 12
- 230000008859 change Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
A kind of MEMS pressure sensor, including substrate and the lower fixed electrode above substrate are the utility model is related to, in addition to the sensitive membrane above lower fixed electrode is supported on by supporting part；Cavity volume is formed between the sensitive membrane and lower fixed electrode, and the two constitutes plate condenser；The release aperture connected with cavity volume is provided with the sensitive membrane；Also include the filling part for being arranged on release hole site；The filling part is filled in release aperture.Pressure sensor of the present utility model, the filling part play a part of similar latch, and its filling is sealed in release aperture so that cavity volume can maintain certain pressure.And filling part is provided only on the position of release aperture so that can reduce influence of the filling part to sensitive membrane sensitivity.
Description
Technical field
Sensor field is the utility model is related to, more particularly, to a kind of MEMS pressure sensor.
Background technology
In existing technical scheme, MEMS pressure sensor mainly has two kinds of condenser type and pressure resistance type, wherein, condenser type
MEMS pressure sensor includes pressure sensitive film, substrate and contact.Pressure sensitive film forms the vacuum chamber of sealing, pressure with substrate
The capacitor that sensitive membrane is formed with bottom electrode can make a response to the pressure change in the external world；When the air pressure change in the external world, it is in
Pressure sensitive film above vacuum chamber can bend, so as to which the capacitance that pressure sensitive film is formed with substrate can change,
And then the change of the electric capacity is read by ASIC circuit, to characterize the pressure change in the external world.
Conventional pressure sensor is when manufacture, in order to form the vacuum between sensitive membrane and lower fixed electrode
Chamber, the mode of sensitive membrane generally use bonding are attached.If manufactured using MEMS technology, need in sensitive membrane
Release aperture is set, and this allows for being difficult to form vacuum chamber between sensitive membrane and lower fixed electrode.
Utility model content
A purpose of the present utility model there is provided a kind of MEMS pressure sensor.
According to one side of the present utility model, there is provided a kind of MEMS pressure sensor, including substrate and positioned at substrate
The lower fixed electrode of top, in addition to the sensitive membrane above lower fixed electrode is supported on by supporting part；The sensitive membrane is with
Cavity volume is formed between fixed electrode, and the two constitutes plate condenser；Releasing of being connected with cavity volume is provided with the sensitive membrane
Discharge hole；Also include the filling part for being arranged on release hole site；The filling part is filled in release aperture.
Alternatively, it is additionally provided with oxide skin(coating) between the filling part and the hole wall of release aperture.
Alternatively, the oxide skin(coating) is silica.
Alternatively, the filling part exposes the position of sensitive membrane upper surface formed with the root for covering the release hole site
Portion so that the section of the filling part is integrally T-shaped.
Alternatively, the protective layer of the covering root is included.
Alternatively, the protective layer uses metal material.
Alternatively, the filling part uses silicon nitride material.
Alternatively, the plate condenser on the substrate is provided with multiple, wherein, it is quick at least one plate condenser
Sense film is in communication with the outside, and the sensitive membrane at least one plate condenser is hedged off from the outer world；The two constitutes differential capacitor knot
Structure.
Alternatively, the sensitive membrane in the plate condenser being hedged off from the outer world is coated to cap rock and covered.
Alternatively, the coating is silica.
Pressure sensor of the present utility model, the filling part play a part of similar latch, and its filling is sealed in release
Kong Zhong so that cavity volume can maintain certain pressure.And filling part is provided only on the position of release aperture so that can reduce
Influence of the filling part to sensitive membrane sensitivity.
It is of the present utility model other by referring to the drawings to the detailed description of exemplary embodiment of the present utility model
Feature and its advantage will be made apparent from.
Brief description of the drawings
The accompanying drawing of a part for constitution instruction describes embodiment of the present utility model, and uses together with the description
In explanation principle of the present utility model.
Fig. 1 is the structural representation of the utility model pressure sensor.
Fig. 2 is the partial enlarged drawing of the utility model filling part and release aperture cooperation position.
Fig. 3 to Fig. 6 is the process chart of the utility model pressure sensor manufacture method.
Embodiment
Various exemplary embodiments of the present utility model are described in detail now with reference to accompanying drawing.It should be noted that：It is unless another
Illustrate outside, the part and the positioned opposite of step, numerical expression and numerical value otherwise illustrated in these embodiments is unlimited
The scope of the utility model processed.
The description only actually at least one exemplary embodiment is illustrative to be never used as to this practicality below
New and its application or any restrictions used.
It may be not discussed in detail for technology and equipment known to person of ordinary skill in the relevant, but in appropriate situation
Under, the technology and equipment should be considered as part for specification.
In shown here and discussion all examples, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined, then it need not be further discussed in subsequent accompanying drawing in individual accompanying drawing.
With reference to figure 1, the utility model discloses a kind of MEMS pressure sensor, including substrate 1, is set on the substrate 1
It is equipped with lower fixed electrode 3 and sensitive membrane 5.Lower fixed electrode 3 of the present utility model, sensitive membrane 5 can be by the sides that are sequentially depositing
Formula is formed on substrate 1, and the substrate 1 can use single crystal silicon material, and the lower fixed electrode 3, sensitive membrane 5 can use single
Crystal silicon or polycrystalline silicon material, the selection of this material and the technique of deposition belong to the common knowledge of those skilled in the art,
No longer illustrate herein.
The lower fixed electrode 3 constitutes plate condenser structure with sensitive membrane 5, in order to realize lower fixed electrode 3 and lining
Insulation between bottom 1, the position connected between the lower fixed electrode 3 and substrate 1 are provided with insulating barrier 2, and the insulating barrier 2 can
With using earth silicon material well-known to those skilled in the art etc..In order to which ensure can between sensitive membrane 5 and lower fixed electrode 3
To form cavity volume 10, the supporting part 4 for support, the support are additionally provided between the sensitive membrane 5 and lower fixed electrode 3
Portion 4 is while support sensitive membrane 5 are played, it can also be ensured that the insulation between sensitive membrane 5 and lower fixed electrode 3.This MEMS
Pressure sensor structure belongs to the common knowledge of those skilled in the art, no longer illustrates herein.
Pressure sensor of the present utility model is made using MEMS technology, wherein, it is provided with the sensitive membrane 5 multiple
Release aperture, the release aperture are used for the cavity volume formed between sensitive membrane 5 and lower fixed electrode 3.That is, pass through the release
The part supporting part 4 between sensitive membrane 5 and lower fixed electrode 3 is got rid of in hole, so as to form described cavity volume 10.
Pressure sensor of the present utility model, in addition to it is arranged on the filling part 7 of release hole site.With reference to figure 1, Fig. 2, institute
The position that filling part 7 is provided only on release aperture is stated, and it is filled in release aperture so that cavity volume 10 constitutes the cavity volume of closing.
Filling part 7 can use silicon nitride material, and it can be formed in release aperture by way of depositing, etching.
Pressure sensor of the present utility model, the filling part play a part of similar latch, and its filling is sealed in release
Kong Zhong so that cavity volume can maintain certain pressure.And filling part is provided only on the position of release aperture so that can reduce
Influence of the filling part to sensitive membrane sensitivity.
, can be preferentially in the hole of release aperture when the size of release aperture is larger in the utility model preferred embodiment
One layer of oxide skin(coating) 6 is set on wall, to reduce the size of release aperture, it is filled by filling part 7 afterwards, sealed.Oxygen
Compound layer 6 can use earth silicon material.
In one preferred embodiment of the utility model, the filling part 7 exposes the position shape of the upper surface of sensitive membrane 5
The root for discharging hole site is covered into having so that the section of the filling part 7 is integrally T-shaped.The filling part 7 is vertical
One section of filling is sealed in release aperture, and one section of its level is covered on the end face of sensitive membrane 5, so as to preferably seal institute
State release aperture.
It may further be preferable that also including the protective layer 8 for covering the root of filling part 7, the protective layer 8 can use
The metal material such as aluminium or gold, it is covered on the exposed end face of filling part 7, so as to further seal the release aperture.
Pressure sensor of the present utility model, its plate condenser formed on the substrate 1 can be provided with it is multiple,
The plurality of plate condenser is worked independently, and its electric signal is linked together, and is passed so as to obtain the pressure of series parallel structure
Sensor structure.In order that differential capacitor structure is may be constructed between capacitor, the sensitive membrane at least one plate condenser
It is in communication with the outside together so that the plate condenser is constituted to extraneous pressure-sensitive plate condenser；It is at least one flat
Sensitive membrane in plate capacitor is hedged off from the outer world so that the plate condenser constitutes the capacity plate antenna insensitive to ambient pressure
Device.Both capacitor arrangements link together, and constitute differential capacitor structure, to be filtered out to extraneous interference signal.
The plate condenser insensitive to ambient pressure is properly termed as absolute capacitance device, when making, such as can be with
Set to cover on one and cover sensitive membrane so that the sensitive membrane is hedged off from the outer world out.In one preferable implementation of the utility model
In mode, its sensitive membrane is covered by coating 9, so as to which sensitive membrane be hedged off from the outer world out, with reference to figure 1.The covering
Layer 9 can be earth silicon material, no longer illustrate herein.
Pressure sensor of the present utility model, make when, be sequentially depositing on substrate 1 first silicon dioxide layer 2,
Lower fixed electrode 3, supporting part 4, sensitive membrane 5；Sensitive membrane 5 is performed etching, to form multiple release aperture 5a, with reference to figure 3.
The supporting part 4 being pointed to by release aperture 5a between lower fixed electrode 3 and sensitive membrane 5 carries out dry etching, from
And the cavity volume 10 surrounded by lower fixed electrode 3, sensitive membrane 5, supporting part 4 is formed, with reference to figure 4.
In the upper surface deposited oxide layer 6 of the sensitive membrane 5, the oxide layer 6 is not only covered on the end face of sensitive membrane 5,
Also it is deposited in release aperture 5a side wall；Continue deposited silicon nitride layer 7a afterwards, silicon nitride layer 7a is not only covered in oxide layer 6
Top, but also be filled in release aperture 5a, so as to which release aperture 5a be sealed, with reference to figure 5.
Silicon nitride layer 7a is performed etching, to form filling part 7 in release aperture 5a position, filling is removed on silicon nitride layer 7a
The position in portion 7 is etched away, so as to reduce influences of the silicon nitride layer 7a to the sensitivity of sensitive membrane 5.
Certainly, for a person skilled in the art, it is also necessary to be provided for connecting the pad of electric signal, this structure
And MEMS manufacturing process belongs to the common knowledge of those skilled in the art, no longer illustrates herein.
Although some specific embodiments of the present utility model are described in detail by example, this area
It is to be understood by the skilled artisans that above example merely to illustrate, rather than in order to limit the scope of the utility model.This
Field it is to be understood by the skilled artisans that can not depart from the scope of the utility model and spirit in the case of, to above example
Modify.The scope of the utility model is defined by the following claims.
Claims (10)
- A kind of 1. MEMS pressure sensor, it is characterised in that：Lower fixed electricity including substrate (1) and above substrate (1) Pole (3), in addition to pass through the sensitive membrane (5) that supporting part (4) is supported on above lower fixed electrode (3)；The sensitive membrane (5) is with Cavity volume (10) is formed between fixed electrode (3), and the two constitutes plate condenser；It is provided with and holds on the sensitive membrane (5) The release aperture of chamber (10) connection；Also include the filling part (7) for being arranged on release hole site；The filling part (7) is filled in release Kong Zhong.
- 2. MEMS pressure sensor according to claim 1, it is characterised in that：The filling part (7) and the hole of release aperture Oxide skin(coating) (6) is additionally provided between wall.
- 3. MEMS pressure sensor according to claim 2, it is characterised in that：The oxide skin(coating) (6) is silica.
- 4. MEMS pressure sensor according to claim 1, it is characterised in that：The filling part (7) exposes sensitive membrane (5) The position of upper surface is formed with the root for covering the release hole site so that the section of the filling part (7) is integrally T-shaped.
- 5. MEMS pressure sensor according to claim 4, it is characterised in that：Also include the protective layer for covering the root (8)。
- 6. MEMS pressure sensor according to claim 5, it is characterised in that：The protective layer (8) uses metal material.
- 7. MEMS pressure sensor according to claim 1, it is characterised in that：The filling part (7) uses silicon nitride material Material.
- 8. MEMS pressure sensor according to claim 1, it is characterised in that：Plate condenser on the substrate (1) Be provided with it is multiple, wherein, the sensitive membrane at least one plate condenser is in communication with the outside, at least one plate condenser Sensitive membrane is hedged off from the outer world；The two constitutes differential capacitor structure.
- 9. MEMS pressure sensor according to claim 8, it is characterised in that：In the plate condenser being hedged off from the outer world Sensitive membrane is coated to cap rock (9) and covered.
- 10. MEMS pressure sensor according to claim 9, it is characterised in that：The coating (9) is silica.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720902564.3U CN207066640U (en) | 2017-07-24 | 2017-07-24 | A kind of MEMS pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720902564.3U CN207066640U (en) | 2017-07-24 | 2017-07-24 | A kind of MEMS pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207066640U true CN207066640U (en) | 2018-03-02 |
Family
ID=61517336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720902564.3U Active CN207066640U (en) | 2017-07-24 | 2017-07-24 | A kind of MEMS pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207066640U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108318218A (en) * | 2018-05-14 | 2018-07-24 | 中国空气动力研究与发展中心低速空气动力研究所 | A kind of flexible thin film type multi-measuring point pressure measurement band for low-speed wind tunnel |
-
2017
- 2017-07-24 CN CN201720902564.3U patent/CN207066640U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108318218A (en) * | 2018-05-14 | 2018-07-24 | 中国空气动力研究与发展中心低速空气动力研究所 | A kind of flexible thin film type multi-measuring point pressure measurement band for low-speed wind tunnel |
| CN108318218B (en) * | 2018-05-14 | 2024-01-16 | 中国空气动力研究与发展中心低速空气动力研究所 | Flexible film type multi-measuring-point pressure measuring belt for low-speed wind tunnel |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200615 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 266104 Laoshan Qingdao District North House Street investment service center room, Room 308, Shandong Patentee before: GOERTEK TECHNOLOGY Co.,Ltd. |